JP4187208B2 - ヒーター - Google Patents
ヒーター Download PDFInfo
- Publication number
- JP4187208B2 JP4187208B2 JP2004004069A JP2004004069A JP4187208B2 JP 4187208 B2 JP4187208 B2 JP 4187208B2 JP 2004004069 A JP2004004069 A JP 2004004069A JP 2004004069 A JP2004004069 A JP 2004004069A JP 4187208 B2 JP4187208 B2 JP 4187208B2
- Authority
- JP
- Japan
- Prior art keywords
- heat generating
- resistance value
- parallel connection
- resistance
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 claims description 61
- 239000000919 ceramic Substances 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- 238000005219 brazing Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000020169 heat generation Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
Description
更に、抵抗発熱体の抵抗値を調整する抵抗値調整手段を設ける。これによって、以下のように、加熱面において所望の温度分布を得られるように制御できる。
図7の比較例では、基体2の最外周部分に直列接続部26が形成されている。この場合には、直列接続部26の幅が大きくなりすぎると、発熱量が低下するので、加熱面の最外周部分での温度が低下する。従って、直列接続部26の幅を小さくすることによって、加熱面の最外周部での発熱量を、基体2のエッジからの放熱を補填するのに十分なだけ大きくすることが必要である。しかし、直列接続部の幅を小さくすると、今度は直列接続部の真上に弧状のホットスポットが現れ易い。
Claims (3)
- 絶縁性材料からなる基体、およびこの基体に設けられている抵抗発熱体を備えているヒーターであって、
前記抵抗発熱体が複数の並列接続部を含んでおり、前記各並列接続部が、並列接続された複数の発熱部を含んでおり、前記抵抗発熱体の抵抗値を調整するネジ付きの抵抗値調整手段を備えており、前記抵抗値調整手段が、前記基体から着脱可能な導電体または絶縁体からなり、前記基体にネジ孔が形成されており、前記各ネジ孔に対応して前記各発熱部にそれぞれ貫通孔が形成されており、前記抵抗値調整手段が前記各発熱部に対応してそれぞれ設けられており、前記抵抗値調整手段が前記各発熱部の前記各貫通孔にそれぞれ挿入されており、ろう材によって固定されていることを特徴とする、ヒーター。 - 前記複数の発熱部の各抵抗値が互いに異なっていることを特徴とする、請求項1記載のヒーター。
- 前記絶縁性材料がセラミックスであり、前記抵抗発熱体が前記基体中に埋設されていることを特徴とする、請求項1または2記載のヒーター。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004004069A JP4187208B2 (ja) | 2004-01-09 | 2004-01-09 | ヒーター |
US11/024,245 US7115839B2 (en) | 2004-01-09 | 2004-12-28 | Heaters |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004004069A JP4187208B2 (ja) | 2004-01-09 | 2004-01-09 | ヒーター |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005197161A JP2005197161A (ja) | 2005-07-21 |
JP2005197161A5 JP2005197161A5 (ja) | 2006-09-21 |
JP4187208B2 true JP4187208B2 (ja) | 2008-11-26 |
Family
ID=34818788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004004069A Expired - Fee Related JP4187208B2 (ja) | 2004-01-09 | 2004-01-09 | ヒーター |
Country Status (2)
Country | Link |
---|---|
US (1) | US7115839B2 (ja) |
JP (1) | JP4187208B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4756695B2 (ja) | 2006-02-20 | 2011-08-24 | コバレントマテリアル株式会社 | 面状ヒータ |
JP2008108703A (ja) * | 2006-09-28 | 2008-05-08 | Covalent Materials Corp | 面状ヒータ及びこのヒータを備えた半導体熱処理装置 |
US8993939B2 (en) * | 2008-01-18 | 2015-03-31 | Momentive Performance Materials Inc. | Resistance heater |
JP6253289B2 (ja) * | 2013-07-19 | 2017-12-27 | 古河機械金属株式会社 | 気相成長装置及び気相成長用加熱装置 |
JP6622052B2 (ja) * | 2015-10-14 | 2019-12-18 | 日本特殊陶業株式会社 | セラミックヒータ及び静電チャック |
CN108028221B (zh) * | 2016-07-19 | 2022-12-06 | 日本碍子株式会社 | 静电卡盘加热器 |
US10679873B2 (en) * | 2016-09-30 | 2020-06-09 | Ngk Spark Plug Co., Ltd. | Ceramic heater |
JP2018063974A (ja) * | 2016-10-11 | 2018-04-19 | 東京エレクトロン株式会社 | 温度制御装置、温度制御方法、および載置台 |
JP7050455B2 (ja) * | 2017-03-15 | 2022-04-08 | 日本特殊陶業株式会社 | 静電チャックの製造方法 |
JP7365805B2 (ja) * | 2019-07-26 | 2023-10-20 | 日本特殊陶業株式会社 | 保持装置の製造方法および保持装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5338919A (en) * | 1991-12-28 | 1994-08-16 | Rohm Co., Ltd. | Heater for sheet material and method for adjusting resistance of same |
JP2617064B2 (ja) | 1992-07-28 | 1997-06-04 | 日本碍子株式会社 | 半導体ウェハー加熱装置およびその製造方法 |
JPH086412A (ja) * | 1994-06-20 | 1996-01-12 | Canon Inc | 加熱装置および画像形成装置 |
JP4040814B2 (ja) * | 1998-11-30 | 2008-01-30 | 株式会社小松製作所 | 円盤状ヒータ及び温度制御装置 |
JP3582518B2 (ja) * | 2001-04-18 | 2004-10-27 | 住友電気工業株式会社 | 抵抗発熱体回路パターンとそれを用いた基板処理装置 |
-
2004
- 2004-01-09 JP JP2004004069A patent/JP4187208B2/ja not_active Expired - Fee Related
- 2004-12-28 US US11/024,245 patent/US7115839B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005197161A (ja) | 2005-07-21 |
US20050173413A1 (en) | 2005-08-11 |
US7115839B2 (en) | 2006-10-03 |
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