JP4175138B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP4175138B2
JP4175138B2 JP2003044072A JP2003044072A JP4175138B2 JP 4175138 B2 JP4175138 B2 JP 4175138B2 JP 2003044072 A JP2003044072 A JP 2003044072A JP 2003044072 A JP2003044072 A JP 2003044072A JP 4175138 B2 JP4175138 B2 JP 4175138B2
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semiconductor chip
semiconductor
stacked
ball
electrode pad
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JP2004253693A (en
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宏治 古澤
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NEC Corp
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、複数の半導体チップを積層させて一つの樹脂封止パッケージ内に収納するスタックＬＳＩ構造の半導体装置に関するもので、特に、積層する半導体チップがほぼ同一サイズの場合にパッケージ内における電気的配線接続を容易にした半導体装置に関する。
【０００２】
【従来の技術】
最近では、半導体装置を組み込んだ電子機器はますます小型化の要求が強くなり、それにつれて電子機器のマザーボードに搭載される半導体装置もサイズが小型化してきている。その一例として、ＣＳＰ（チップサイズパッケージ）と呼ばれる構造の半導体装置が実用化されている。この構造は、インタポーザと呼ばれる基板の上面に半導体チップを実装し、半導体チップとインタポーザ基板の回路とをボンディングワイヤで接続し、次いで、ボンディングワイヤを含む半導体チップの周囲を樹脂封止してインタポーザ基板と一体化した構造であり、このＣＳＰ半導体装置をインタポーザ基板下面に設けられた半田ボールを介してマザーボードに搭載している。
【０００３】
そして、さらに半導体チップの実装効率を上げるために、一つのＣＳＰ内に複数の半導体チップを積層して実装するスタック構造のＬＳＩパッケージ（以下、スタックＬＳＩと称する）が開発されている。このスタックＬＳＩは、通常はサイズの大きい半導体チップから順にピラミッド状に積層して行くが、主にメモリなどで同一サイズの半導体チップを積層しなければならない場合があり、このような場合、従来技術では三つの積層方法が用いられている。
【０００４】
まず、第１の積層方法（例えば、特許文献１参照）は、図５の断面図に示すように、第１の半導体チップ１２０を、金または半田で形成された接続バンプ１５０を介してフリップチップ接続によってインタポーザ基板１１０に対して対向する方向に接続する。第１の半導体チップ１２０とインタポーザ基板１１０の隙間には、接着剤１７０が塗布されている。こうして固定された第１の半導体チップ１２０の上面に、同一サイズの第２の半導体チップ１３０を接着剤１７１により積層し、この第２の半導体チップ１３０は金ワイヤー１６０によるワイヤーボンディング接続でインタポーザ基板１１０と接続する。このようにして積層、接続された２枚の半導体チップ１２０、１３０は周囲を樹脂１８０で封止され、また、インタポーザ基板１１０の下面の各電極パッド（図示せず）には、マザーボード（図示せず）との接続用となる半田ボール１８５が融着されている。
【０００５】
この技術で積層できる半導体チップは２枚までで、３枚目以降の半導体チップは通常のピラミッド状に積層する必要がある。また、フリップチップ接続が利用できるのは最下段の半導体チップのみで、例えば４枚の半導体チップを積層するのに、サイズ順で２枚目と３枚目が同じ半導体チップである場合などには使用できない。
【０００６】
第２の積層方法（例えば、特許文献２参照）は、図６の断面図に示すように、第１の半導体チップ２２０を接着剤２７０でインタポーザ基板２１０に固定し、金ワイヤー２５０によるワイヤーボンディングでインタポーザ基板２１０と接続した後、第１の半導体チップ２２０上に接着剤２７１を塗布し、第１の半導体チップ２２０より一回り小さいスペーサ２７２（通常はシリコン片）を接着し、その上に同一サイズの第２の半導体チップ２３０を接着剤２７３で積層する。第２の半導体チップ２３０は、金ワイヤー２６０によるワイヤーボンディングでインタポーザ基板２１０と接続する。積層、接続された２枚の半導体チップ２２０、２３０は周囲を樹脂２８０で封止され、また、インタポーザ基板２１０の下面の各電極パッド（図示せず）には、マザーボード（図示せず）との接続用の半田ボール２８５が融着されている。
【０００７】
この技術では、第２の半導体チップ２３０を積層した際に、第１の半導体チップ２２０の金ワイヤー２５０を潰さないように、スペーサ２７２の厚さを調整して２枚の半導体チップ間のクリアランスを確保する必要がある。
【０００８】
第３の積層方法は、図７の断面図に示すように、第１の半導体チップ３２０を接着剤３７０でインタポーザ基板３１０に固定し、金ワイヤー３５０によるワイヤーボンディングでインタポーザ基板３１０と接続する。その上に同一サイズの第２の半導体チップ３３０を接着剤３７１で積層する。第２の半導体チップ３３０は金ワイヤー３６０によるワイヤーボンディングでインタポーザ基板３１０と接続する。積層、接続された２枚の半導体チップ３２０、３３０は周囲を樹脂３８０で封止され、また、インタポーザ基板３１０の下面の各電極パッド（図示せず）には、マザーボード（図示せず）との接続用の半田ボール３８５が融着されている。
【０００９】
この技術は、第２の積層方法に近いが、スペーサを使用する代わりに、接着剤３７１の塗布厚と第２の半導体チップ３３０を積層する際の押し付け圧力で２枚の半導体チップ３２０、３３０の間のクリアランスを調整している。この技術は、接着剤の粘度、塗布量、硬化による収縮など考慮すべきパラメータが多い。
【００１０】
【特許文献１】
特開２００２−２１７３５６号公報（［０００４］、図１６）
【特許文献２】
特開２００２−３４３９２８号公報（［００１７］、図１）
【００１１】
【発明が解決しようとする課題】
上述したように、同一サイズの半導体チップを複数枚積層させる場合の従来のスタックＬＳＩ構造の半導体装置においては、メモリの場合、半導体チップ３〜４枚の積層が普通であるため、第１の積層方法のようにフリップチップを使用する積層方法はあまり用いられていない。また、第２の積層方法のようにシリコン片スペーサを使用する場合は、通常の半導体チップと同じくスペーサもあまり薄くできないため、大体７０〜１００μｍ程度の厚さである。したがって、２枚の半導体チップ間のクリアランスは接着剤の厚さと合わせると１２０〜１５０μｍ程度となる。この値は半導体チップの電極パッドに接続される金ワイヤーや金バンプを避けるためのクリアランスとしてはやや大きい。
【００１２】
そこで、第３の積層方法のように、接着剤の厚さでクリアランスを取る方法が、出来上がり厚さや工程数から見て最も好ましい積層方法と言える。しかし、この方法も、軟体である接着剤でクリアランスを確保しようとすると、接着剤の粘度、塗布量、硬化収縮の影響など多くのパラメータの影響を考慮する必要があり、やや確実性に欠ける傾向がある。
【００１３】
本発明は、これらの問題点を解決するためになされたもので、一つのパッケージ内に同一サイズの半導体チップを複数枚積層するスタックＬＳＩ構造の半導体装置において、スペーサ等を用いずに積層する半導体チップ間のクリアランスを確保することのできる半導体装置を提供することを目的とする。
【００１４】
【課題を解決するための手段】
本発明は、ほぼ同一サイズの複数の半導体チップを積層させて一つの樹脂封止パッケージ内に収納するスタックＬＳＩ構造の半導体装置において、半導体チップを積層載置するインタポーザ基板上面に接着剤を介して最下段となる第１の半導体チップが固着され、この第１の半導体チップ上面に形成された複数の電極パッド上にそれぞれ突起部が形成され、この突起部を介して第１の半導体チップ上に２段目となる第２の半導体チップを載置することによって第１と第２の半導体チップ間のクリアランスを確保するとともに接着剤を介して第１の半導体チップ上に第２の半導体チップが固着されている。
【００１５】
また、本発明は、前記突起部が下段側となる半導体チップに設けられ、上段側となる半導体チップとの間のクリアランスを確保するとともに接着剤を介して複数の半導体チップを積層する構造であり、この積層された各半導体チップとインタポーザ基板との間はそれぞれ金ワイヤーで電気的に接続され、各金ワイヤーの半導体チップ側は最上段の半導体チップ以外前記突起部を経由して半導体チップの電極パッドと接続され、この金ワイヤーは、積層された半導体チップ間のクリアランス内に納まるとともに上段側の半導体チップの下面と接触しない高さに金ワイヤーループが形成されている。
【００１６】
また、本発明において、前記突起部は、金ワイヤーを用いてボールボンディングによって形成されたボールバンプが複数段に積層された構造であり、また、前記最下段以外の半導体チップには、この突起部と接触する下面側に絶縁性フィルムが貼付されており、また、前記下段側となる半導体チップに設けられた突起部を構成する第１のボールバンプ上面とインタポーザ基板の電極パッドとが金ワイヤーによって電気的に接続されている。
【００１７】
また、本発明において、前記電気的に接続されている金ワイヤーは、インタポーザ基板の電極パッドを１ｓｔボンド点とし、第１のボールバンプ上面を２ｎｄボンド点とする逆打ちボンディング法で接続されており、また、前記突起部は、第１のボールバンプ上面に２ｎｄボンドで接続された金ワイヤーの上にさらに２段目以降のボールバンプを重ねて積層した構造であり、また、前記積層された最上段の半導体チップ上面の電極パッドとインタポーザ基板の電極パッドとを接続する金ワイヤーは、最上段の半導体チップ側を１ｓｔボンド点としインタポーザ基板側を２ｎｄボンド点とする順打ちボンディング法で接続されている。
【００１８】
【発明の実施の形態】
まず、本発明の特徴は、一つのパッケージ内に半導体チップを複数枚積層するスタックＬＳＩ構造の半導体装置であって、積層する半導体チップのサイズがほぼ同じで、上段側となる半導体チップを下段側となる半導体チップの電極パッド上にオーバーラップさせて積層する必要がある場合に、下段側の半導体チップの電極パッド上に金ワイヤーによるボールバンプを２つ以上積層することによってスペーサ等を用いずに半導体チップ間のクリアランスを確保することができるようにしたことにある。
【００１９】
次に、本発明の実施の形態について図面を参照して説明する。図１は、本発明の半導体装置の一実施形態を示す断面図である。図１に示すように、本発明の半導体装置は、インタポーザ基板１０の上面にほぼ同一サイズの第１の半導体チップ２０と第２の半導体チップ３０の２枚が積層されている。第１の半導体チップ２０は、インタポーザ基板１０の上面に電極パッド２３のある面を上にして接着剤７０によりマウントされている。また、第２の半導体チップ３０は、上面に電極パッド３１が形成され下面には絶縁性フィルム７５が貼付されており、第１の半導体チップ２０と同じく電極パッド３１の面を上にして接着剤７１で第１の半導体チップの２０上にマウントされている。
【００２０】
また、第１の半導体チップ２０と第２の半導体チップ３０との間には、第１の半導体チップ２０と第２の半導体チップ３０のクリアランスｔを確保するための突起部が設けられており、この突起部は第１の半導体チップ２０の電極パッド２３に金ワイヤーのボンディングにより接合されたボールバンプ２１と、このボールバンプ２１の上に接続された金ワイヤー５０の一端を介してさらにその上に接合されたボールバンプ２２とから構成されている。
【００２１】
また、金ワイヤー５０の他端はインタポーザ基板１０の電極パッド１１にワイヤーボンディングされ、さらに、第２の半導体チップ３０の電極パッド３１とインタポーザ基板１０の電極パッド１２との間は金ワイヤー６０でワイヤーボンディングされている。そして、インタポーザ基板１０上に組み立てられたこれらのスタック部品を樹脂８０で封止してＣＳＰ型のスタックＬＳＩ半導体装置が構成されている。そして、この半導体装置は、インタポーザ基板１０の下面側の電極パッド１３に設けられた半田ボール８５を介してマザーボード（図示せず）に搭載される構造となっている。
【００２２】
次に、上述した本発明の半導体装置の組み立て方法について図面を用いて説明する。図２（ａ）、（ｂ）、（ｃ）、（ｄ）、（ｅ）はその工程順を示す断面図である。まず、図（ａ）に示すように、複数の半導体チップを積層搭載するためのインタポーザ基板１０の上面に接着剤７０を塗布し、第１の半導体チップ２０を電極パッド２３のある面を上にしてマウントする。続いて電極パッド２３にボールバンプ２１を接合する。このボールバンプ２１の形成は通常のボールボンディング法を用いて行ない、具体的には金ワイヤーの先端に金ボールを形成し、この金ボールを電極パッド２３上に接合したのち金ワイヤーを切断することによってボールバンプ２１としている。図３はボールバンプ２１の部分拡大図で、上面には切断跡９０が残る。ボールバンプのサイズは、ボンディング条件が変わらない限り常に一定のサイズで形成することが可能である。
【００２３】
次に、図（ｂ）に示すように、インタポーザ基板１０の電極パッド１１と第１の半導体チップ２０に形成したボールバンプ２１との間を、通常のワイヤーボンディング方法により金ワイヤー５０で電気的に接続する。この時のワイヤーボンディングは通常の方法とは逆の手順で行なう。すなわち、インタポーザ基板１０側の電極パッド１１を１ｓｔボンド点とし、第１の半導体チップ２０の電極パッド２３上に形成されたボールバンプ２１の上面を２ｎｄボンド点とする逆打ちボンディング方式で行なう。そのため、２ｎｄボンド点でのワイヤー接続はステッチボンディングとなる。また、逆打ちボンディング方式はワイヤーループ高さを低く押さえることができるので、半導体チップを積層した場合に上側の半導体チップとの接触を防ぐことができる。
【００２４】
次に、図（ｃ）に示すように、２ｎｄボンド点にステッチボンディングされている金ワイヤー５０の上に、さらにボールバンプ２２を重ねて形成することによって突起部が形成される。図４はこの突起部の拡大図である。ボールバンプ２２の形成は、図（ａ）で説明したのと同じボールボンディング法で行なう。これにより、第１の半導体チップ２０の電極パッド２３上にボールバンプ２１、２２が金ワイヤー５０を介して２段に積層され、この積層高さ（突起部高さ）ｔが半導体チップ間のクリアランスｔを確保する寸法となる。また、ボールバンプ形成の際は、ボールバンプ上面に金ワイヤーを切断した切断跡が残るため、ボールバンプ２１上に金ワイヤー５０のステッチボンディングを行なうと接合強度が劣ると言う問題があるが、本発明のようにステッチボンディングした上からさらにボールバンプ２２を重ねることによって接合をより強固にすることができる。このように、金ワイヤー５０と第１の半導体チップ２０の電極パッド２３との接続は、ボールバンプ２１を介して行なわれる。
【００２５】
次に、図（ｄ）に示すように、第１の半導体チップ２０の上に接着剤７１を塗布し、第２の半導体チップ３０を、第１の半導体チップ２０と同じく電極パッド３１の形成された面を上にして第１の半導体チップ２０上にマウントする。この際、第１の半導体チップ２０と第２の半導体チップ３０はほぼ同じ大きさであるため、通常の順打ちボンディング方式でボンディングを行なうと、第１の半導体チップ２０の各電極パッド２３にボンディングされた金ワイヤー５０のループは第２の半導体チップ３０によって押し潰されてしまうが、逆打ちボンディング方式であるためワイヤーループがほぼ水平に形成されること、及び２段に積層されたボールバンプ２１、２２によって第１の半導体チップ２０と第２の半導体チップ３０との間のクリアランスが確保されていることによって、金ワイヤー５０は潰されない。また、万一金ワイヤー５０が積層されたボールバンプ２２と接触しても、電気的に不安定にならないように第２の半導体チップ３０の下面にはウエハの段階であらかじめ絶縁性フィルム７５が貼付されている。
【００２６】
次に、図（ｅ）に示すように、第１の半導体チップ２０上に積層接着された第２の半導体チップ３０の電極パッド３１とインタポーザ基板１０の電極パッド１２との間を、金ワイヤー６０により通常の順打ちボンディング方式を用いて電気的に接続する。その後、金ワイヤー５０、６０を含む２枚の積層接着された半導体チップ２０、３０の周囲を樹脂８０によってインタポーザ基板１０上に一体に封止し、スタックＬＳＩ構造のＣＳＰとなる。そして、このＣＳＰは、インタポーザ基板１０の下面の電極パッド１３に融着されている半田ボール８５によってマザーボード（図示せず）に接続するようになっている。
【００２７】
以上、本発明の一実施の形態について述べてきたが、積層する半導体チップは２枚に限らず、それ以上の枚数に対しても各チップとチップの間に順次ボールバンプを積層させてクリアランスを確保することによって、複数枚の同一サイズの半導体チップを積層することができる。また、ボールバンプも２段に限らず必要に応じて段数を増やしてもよい。
【００２８】
【発明の効果】
以上述べてきたように、本発明は、一つのパッケージ内に同一サイズの半導体チップを複数枚積層するスタックＬＳＩ構造の半導体装置において、スペーサ等を用いることなく積層する半導体チップ間のクリアランスを確保する手段として、通常のワイヤーボンディング法を用いて下段側の半導体チップの電極パッド上に第１のボールバンプを形成し、その上に逆打ちボンディング方式で金ワイヤーを接続し、さらにその上に第２のボールバンプを積層接続することによって突起部を形成し、この突起部によって上段側の半導体チップとの間のクリアランスを確保するようにしている。
【００２９】
ボールバンプは一定の精度で形成可能であるため、従来のように接着剤を用いてクリアランスを確保するのに比べて極めて容易かつ確実な手段でクリアランス確保が可能であり、またスペーサを用いるのに比べてクリアランスを狭くできるので半導体装置の小型化に寄与できる。また、逆打ちボンディング方式を採用したことによってワイヤーループを低くできるので、クリアランスが狭くなってもワイヤーとの接触が発生しない。
【図面の簡単な説明】
【図１】本発明の半導体装置における一実施の形態を示す断面図である。
【図２】本発明の半導体装置の組み立て方法を説明する図で、図（ａ）〜（ｅ）はその工程図である。
【図３】図２（ａ）の部分拡大図である。
【図４】図２（ｃ）の部分拡大図である。
【図５】従来の半導体装置の例１を示す断面図である。
【図６】従来の半導体装置の例２を示す断面図である。
【図７】従来の半導体装置の例３を示す断面図である。
【符号の説明】
１０、１１０、２１０、３１０ インタポーザ基板
１１、１２、１３、２３、３１ 電極パッド
２０、１２０、２２０、３２０ 第１の半導体チップ
２１、２２ ボールバンプ
３０、１３０、２３０、３２０ 第２の半導体チップ
１５０ 接続バンプ
５０、２５０、３５０ 金ワイヤー
６０、１６０、２６０、３６０ 金ワイヤー
７０、１７０、２７０、３７０ 接着剤
７１、１７１、２７１、３７１ 接着剤
７５ 絶縁性フィルム
２７２ スペーサ
２７３ 接着剤
８０、１８０、２８０、３８０ 樹脂
８５、１８５、２８５、３８５ 半田ボール
９０ 切断跡[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device having a stacked LSI structure in which a plurality of semiconductor chips are stacked and housed in a single resin-sealed package, and in particular, when the stacked semiconductor chips are substantially the same size, The present invention relates to a semiconductor device that facilitates wiring connection.
[0002]
[Prior art]
Recently, electronic devices incorporating semiconductor devices are increasingly required to be miniaturized, and semiconductor devices mounted on motherboards of electronic devices are also becoming smaller in size. As an example, a semiconductor device having a structure called a CSP (chip size package) has been put into practical use. In this structure, a semiconductor chip is mounted on the upper surface of a substrate called an interposer, the semiconductor chip and the circuit of the interposer substrate are connected by bonding wires, and then the periphery of the semiconductor chip including the bonding wires is sealed with resin. The CSP semiconductor device is mounted on the mother board via solder balls provided on the lower surface of the interposer substrate.
[0003]
In order to further increase the mounting efficiency of semiconductor chips, an LSI package having a stack structure (hereinafter referred to as a stack LSI) in which a plurality of semiconductor chips are stacked and mounted in one CSP has been developed. This stack LSI is usually stacked in a pyramid shape in order from a semiconductor chip having a larger size. However, in some cases, it is necessary to stack semiconductor chips of the same size mainly in a memory or the like. Then, three lamination methods are used.
[0004]
First, as shown in the cross-sectional view of FIG. 5, the first stacking method (see, for example, Patent Document 1) flips the first semiconductor chip 120 through connection bumps 150 formed of gold or solder. The connection is made in a direction facing the interposer substrate 110 by connection. An adhesive 170 is applied to the gap between the first semiconductor chip 120 and the interposer substrate 110. A second semiconductor chip 130 of the same size is laminated with an adhesive 171 on the upper surface of the first semiconductor chip 120 thus fixed, and the second semiconductor chip 130 is connected to the interposer substrate 110 by wire bonding connection using a gold wire 160. Connect with. The two semiconductor chips 120 and 130 stacked and connected in this way are sealed with resin 180 on the periphery, and each electrode pad (not shown) on the lower surface of the interposer substrate 110 has a mother board (not shown). Solder balls 185 for connection with the solder are fused.
[0005]
Up to two semiconductor chips can be stacked by this technique, and the third and subsequent semiconductor chips need to be stacked in a normal pyramid shape. In addition, flip chip connection can be used only in the lowermost semiconductor chip. For example, when four semiconductor chips are stacked, the second and third chips are the same semiconductor chip in order of size. I can not use it.
[0006]
As shown in the cross-sectional view of FIG. 6, the second stacking method (for example, see Patent Document 2) is performed by fixing the first semiconductor chip 220 to the interposer substrate 210 with an adhesive 270 and wire bonding with a gold wire 250. After connecting to the interposer substrate 210, an adhesive 271 is applied onto the first semiconductor chip 220, a spacer 272 (usually a silicon piece) smaller than the first semiconductor chip 220 is adhered, and the same size is formed thereon. The second semiconductor chip 230 is laminated with an adhesive 273. The second semiconductor chip 230 is connected to the interposer substrate 210 by wire bonding using a gold wire 260. The two semiconductor chips 220 and 230 that are stacked and connected are sealed with a resin 280, and each electrode pad (not shown) on the lower surface of the interposer substrate 210 is connected to a mother board (not shown). A solder ball 285 for connection is fused.
[0007]
In this technique, when the second semiconductor chip 230 is stacked, the thickness of the spacer 272 is adjusted so that the gold wire 250 of the first semiconductor chip 220 is not crushed so that the clearance between the two semiconductor chips is increased. It is necessary to secure.
[0008]
In the third stacking method, as shown in the cross-sectional view of FIG. 7, the first semiconductor chip 320 is fixed to the interposer substrate 310 with an adhesive 370 and connected to the interposer substrate 310 by wire bonding using a gold wire 350. A second semiconductor chip 330 having the same size is laminated thereon with an adhesive 371. The second semiconductor chip 330 is connected to the interposer substrate 310 by wire bonding using a gold wire 360. The two stacked and connected semiconductor chips 320 and 330 are sealed with a resin 380, and each electrode pad (not shown) on the lower surface of the interposer substrate 310 is connected to a mother board (not shown). A solder ball 385 for connection is fused.
[0009]
This technique is close to the second stacking method, but instead of using a spacer, the application thickness of the adhesive 371 and the pressing pressure when stacking the second semiconductor chip 330 are used to form the two semiconductor chips 320 and 330. The clearance between them is adjusted. This technique has many parameters that should be considered, such as adhesive viscosity, coating amount, and shrinkage due to curing.
[0010]
[Patent Document 1]
JP 2002-217356 A ([0004], FIG. 16)
[Patent Document 2]
JP 2002-343928 A ([0017], FIG. 1)
[0011]
[Problems to be solved by the invention]
As described above, in a conventional stack LSI structure semiconductor device in which a plurality of semiconductor chips of the same size are stacked, in the case of a memory, three to four semiconductor chips are usually stacked. A lamination method using a flip chip like the method is not often used. In addition, when silicon piece spacers are used as in the second stacking method, the spacers cannot be made very thin as in the case of a normal semiconductor chip, so the thickness is about 70 to 100 μm. Therefore, the clearance between the two semiconductor chips is about 120 to 150 μm when combined with the thickness of the adhesive. This value is slightly larger as a clearance for avoiding gold wires and gold bumps connected to the electrode pads of the semiconductor chip.
[0012]
Therefore, a method of taking clearance by the thickness of the adhesive as in the third lamination method can be said to be the most preferable lamination method in view of the finished thickness and the number of steps. However, this method also needs to take into account the effects of many parameters such as the viscosity of the adhesive, the coating amount, and the effects of curing shrinkage when trying to secure clearance with a soft adhesive, and it tends to be somewhat uncertain. There is.
[0013]
The present invention has been made to solve these problems. In a semiconductor device having a stacked LSI structure in which a plurality of semiconductor chips of the same size are stacked in one package, the semiconductor is stacked without using a spacer or the like. It is an object of the present invention to provide a semiconductor device capable of ensuring a clearance between chips.
[0014]
[Means for Solving the Problems]
The present invention relates to a stacked LSI structure semiconductor device in which a plurality of semiconductor chips having substantially the same size are stacked and housed in a single resin-sealed package. The lowermost first semiconductor chip is fixed, and a protrusion is formed on each of the plurality of electrode pads formed on the upper surface of the first semiconductor chip. The protrusion is formed on the first semiconductor chip via the protrusion. By placing the second semiconductor chip in the second stage, the clearance between the first and second semiconductor chips is secured, and the second semiconductor chip is fixed on the first semiconductor chip via an adhesive. Has been.
[0015]
Further, the present invention is a structure in which the protruding portion is provided on a semiconductor chip on the lower side, and a clearance between the semiconductor chip on the upper side is secured and a plurality of semiconductor chips are stacked via an adhesive. The stacked semiconductor chips and the interposer substrate are electrically connected by gold wires, and the semiconductor chip side of each gold wire is connected to the electrode of the semiconductor chip via the protrusions other than the uppermost semiconductor chip. The gold wire loop is formed at a height that is connected to the pad and fits within the clearance between the stacked semiconductor chips and does not contact the lower surface of the upper semiconductor chip.
[0016]
In the present invention, the protrusion has a structure in which ball bumps formed by ball bonding using a gold wire are stacked in a plurality of stages, and the semiconductor chip other than the lowermost stage has this protrusion. An insulating film is affixed to the lower surface side in contact with the upper surface, and the upper surface of the first ball bump and the electrode pad of the interposer substrate constituting the protrusion provided on the semiconductor chip on the lower side are formed by a gold wire. Electrically connected.
[0017]
In the present invention, the electrically connected gold wires are connected by a back-bonding method in which the electrode pad of the interposer substrate is a 1st bond point and the upper surface of the first ball bump is a 2nd bond point. In addition, the protrusion has a structure in which a second and subsequent ball bumps are further stacked on a gold wire connected by a 2nd bond on the upper surface of the first ball bump, Gold wires that connect the electrode pads on the upper surface of the upper semiconductor chip and the electrode pads on the interposer substrate are connected by a forward bonding method in which the uppermost semiconductor chip side is the 1st bond point and the interposer substrate side is the 2nd bond point. Yes.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
First, a feature of the present invention is a semiconductor device having a stacked LSI structure in which a plurality of semiconductor chips are stacked in one package, and the size of the stacked semiconductor chips is substantially the same, and the upper semiconductor chip is positioned on the lower side. When it is necessary to overlap and laminate on the electrode pad of the semiconductor chip to be used, by laminating two or more ball bumps made of gold wire on the electrode pad of the lower semiconductor chip, without using a spacer or the like This is because a clearance between semiconductor chips can be secured.
[0019]
Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device of the present invention. As shown in FIG. 1, in the semiconductor device of the present invention, two sheets of a first semiconductor chip 20 and a second semiconductor chip 30 having substantially the same size are stacked on the upper surface of an interposer substrate 10. The first semiconductor chip 20 is mounted on the upper surface of the interposer substrate 10 with an adhesive 70 with the surface with the electrode pads 23 facing upward. Further, the second semiconductor chip 30 has an electrode pad 31 formed on the upper surface and an insulating film 75 attached on the lower surface, and the surface of the electrode pad 31 is the same as that of the first semiconductor chip 20. 71 is mounted on the first semiconductor chip 20.
[0020]
Further, a protrusion for securing a clearance t between the first semiconductor chip 20 and the second semiconductor chip 30 is provided between the first semiconductor chip 20 and the second semiconductor chip 30. This protrusion is further formed on the ball bump 21 bonded to the electrode pad 23 of the first semiconductor chip 20 by gold wire bonding, and further on one end of the gold wire 50 connected on the ball bump 21. The ball bumps 22 are joined to each other.
[0021]
Further, the other end of the gold wire 50 is wire-bonded to the electrode pad 11 of the interposer substrate 10, and further, a wire between the electrode pad 31 of the second semiconductor chip 30 and the electrode pad 12 of the interposer substrate 10 is wired with a gold wire 60. Bonded. These stack parts assembled on the interposer substrate 10 are sealed with a resin 80 to form a CSP type stacked LSI semiconductor device. This semiconductor device has a structure that is mounted on a mother board (not shown) via solder balls 85 provided on the electrode pads 13 on the lower surface side of the interposer substrate 10.
[0022]
Next, a method for assembling the semiconductor device of the present invention described above will be described with reference to the drawings. 2A, 2B, 2C, 2D, and 2E are cross-sectional views showing the order of the steps. First, as shown in FIG. 1A, an adhesive 70 is applied to the upper surface of an interposer substrate 10 for stacking and mounting a plurality of semiconductor chips, and the first semiconductor chip 20 is placed with the surface with the electrode pads 23 facing upward. Mount. Subsequently, the ball bump 21 is bonded to the electrode pad 23. The formation of the ball bump 21 is performed using a normal ball bonding method. Specifically, a gold ball is formed at the tip of the gold wire, and the gold wire is bonded onto the electrode pad 23 and then the gold wire is cut. Thus, the ball bump 21 is obtained. FIG. 3 is a partially enlarged view of the ball bump 21, and a cut mark 90 remains on the upper surface. The size of the ball bump can always be formed at a constant size as long as the bonding conditions do not change.
[0023]
Next, as shown in FIG. 2B, the gold wire 50 is electrically connected between the electrode pads 11 of the interposer substrate 10 and the ball bumps 21 formed on the first semiconductor chip 20 by a normal wire bonding method. Connecting. The wire bonding at this time is performed in the reverse procedure of the normal method. That is, the back-bonding method is used in which the electrode pad 11 on the interposer substrate 10 side is the 1st bond point and the upper surface of the ball bump 21 formed on the electrode pad 23 of the first semiconductor chip 20 is the 2nd bond point. Therefore, the wire connection at the 2nd bond point is stitch bonding. In addition, since the reverse bonding method can keep the wire loop height low, contact with the upper semiconductor chip can be prevented when semiconductor chips are stacked.
[0024]
Next, as shown in FIG. 3C, a protrusion is formed by further forming a ball bump 22 on the gold wire 50 stitch-bonded to the 2nd bond point. FIG. 4 is an enlarged view of this protrusion. The ball bumps 22 are formed by the same ball bonding method as described with reference to FIG. As a result, the ball bumps 21 and 22 are stacked in two stages on the electrode pads 23 of the first semiconductor chip 20 via the gold wires 50, and the stacked height (projection height) t is the clearance between the semiconductor chips. This is a dimension that secures t. Further, when the ball bump is formed, there is a problem that the bonding strength is inferior when stitch bonding of the gold wire 50 is performed on the ball bump 21 because the cut trace of the gold wire is left on the upper surface of the ball bump. By joining the ball bumps 22 after stitch bonding as in the present invention, the bonding can be further strengthened. Thus, the connection between the gold wire 50 and the electrode pad 23 of the first semiconductor chip 20 is made through the ball bump 21.
[0025]
Next, as shown in FIG. 4D, an adhesive 71 is applied on the first semiconductor chip 20, and the second semiconductor chip 30 is formed with the electrode pads 31 in the same manner as the first semiconductor chip 20. Mounted on the first semiconductor chip 20 with the surface facing up. At this time, since the first semiconductor chip 20 and the second semiconductor chip 30 are approximately the same size, bonding is performed on each electrode pad 23 of the first semiconductor chip 20 when bonding is performed by a normal forward bonding method. The loop of the gold wire 50 is crushed by the second semiconductor chip 30, but the wire loop is formed almost horizontally because of the reverse bonding method, and the ball bumps 21 stacked in two stages are used. , 22 ensures the clearance between the first semiconductor chip 20 and the second semiconductor chip 30 so that the gold wire 50 is not crushed. In addition, an insulating film 75 is attached to the lower surface of the second semiconductor chip 30 in advance at the wafer level so that it does not become electrically unstable even if it contacts the ball bump 22 on which the gold wire 50 is laminated. Has been.
[0026]
Next, as shown in FIG. 4E, a gold wire 60 is interposed between the electrode pad 31 of the second semiconductor chip 30 laminated and bonded onto the first semiconductor chip 20 and the electrode pad 12 of the interposer substrate 10. Thus, electrical connection is made using a normal forward bonding method. Thereafter, the periphery of the two laminated and bonded semiconductor chips 20 and 30 including the gold wires 50 and 60 is integrally sealed on the interposer substrate 10 by the resin 80 to form a CSP having a stacked LSI structure. The CSP is connected to a mother board (not shown) by solder balls 85 fused to the electrode pads 13 on the lower surface of the interposer substrate 10.
[0027]
Although one embodiment of the present invention has been described above, the number of semiconductor chips to be stacked is not limited to two, and even when the number of chips is larger, ball bumps are sequentially stacked between each chip to provide clearance. By ensuring, a plurality of semiconductor chips of the same size can be stacked. Also, the number of ball bumps is not limited to two, and the number of steps may be increased as necessary.
[0028]
【The invention's effect】
As described above, the present invention secures a clearance between stacked semiconductor chips without using a spacer or the like in a stacked LSI structure semiconductor device in which a plurality of semiconductor chips of the same size are stacked in one package. As a means, a first ball bump is formed on an electrode pad of a lower semiconductor chip using a normal wire bonding method, a gold wire is connected thereto by a back-bonding method, and a second wire is further formed thereon. These ball bumps are stacked and connected to form a protrusion, and this protrusion ensures a clearance with the upper semiconductor chip.
[0029]
Since ball bumps can be formed with a certain degree of accuracy, it is possible to secure clearance with extremely easy and reliable means compared to using conventional adhesives to secure clearance, and to use spacers. Compared with this, the clearance can be narrowed, which contributes to miniaturization of the semiconductor device. Further, since the wire loop can be lowered by adopting the reverse bonding method, contact with the wire does not occur even if the clearance is narrowed.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device of the present invention.
FIGS. 2A to 2E are diagrams illustrating a method for assembling a semiconductor device according to the present invention, and FIGS.
FIG. 3 is a partially enlarged view of FIG.
FIG. 4 is a partially enlarged view of FIG. 2 (c).
FIG. 5 is a cross-sectional view showing Example 1 of a conventional semiconductor device.
FIG. 6 is a cross-sectional view showing Example 2 of a conventional semiconductor device.
FIG. 7 is a cross-sectional view showing Example 3 of a conventional semiconductor device.
[Explanation of symbols]
10, 110, 210, 310 Interposer substrate 11, 12, 13, 23, 31 Electrode pads 20, 120, 220, 320 First semiconductor chip 21, 22 Ball bumps 30, 130, 230, 320 Second semiconductor chip 150 Connection bump 50, 250, 350 Gold wire 60, 160, 260, 360 Gold wire 70, 170, 270, 370 Adhesive 71, 171, 271, 371 Adhesive 75 Insulating film 272 Spacer 273 Adhesive 80, 180, 280 380 Resin 85, 185, 285, 385 Solder ball 90 Cutting trace

Claims (4)

複数の半導体チップを積層させて一つの樹脂封止パッケージ内に収納するスタックＬＳＩ構造の半導体装置において、半導体チップを積層載置するインタポーザ基板上面に接着剤を介して最下段となる第１の半導体チップが電極パッドのある面を上にして固着され、この電極パッドに第１のボールバンプが形成され、この第１のボールバンプと前記インタポーザ基板の電極パッドとがボンディングワイヤー接続され、この接続されたボンディングワイヤーを介して第１のボールバンプの上に第２のボールバンプが形成されてボールバンプが２段に積層され、この２段に積層されたボールバンプの上に第２の半導体チップが電極パッドのある面を上にして接着剤を介して固着されていることを特徴とする半導体装置。 In a semiconductor device having a stacked LSI structure in which a plurality of semiconductor chips are stacked and housed in a single resin-sealed package, the first semiconductor that is the lowest stage via an adhesive on the upper surface of the interposer substrate on which the semiconductor chips are stacked and mounted The chip is fixed with the surface having the electrode pad facing upward, and a first ball bump is formed on the electrode pad. The first ball bump and the electrode pad of the interposer substrate are connected by a bonding wire. A second ball bump is formed on the first ball bump via the bonding wire, and the ball bumps are stacked in two stages. The second semiconductor chip is formed on the ball bumps stacked in the two stages. A semiconductor device, which is fixed by an adhesive with a surface having an electrode pad facing upward . 前記２段に積層されたボールバンプの高さが第１と第２の半導体チップ間のクリアランスを確保する寸法であることを特徴とする請求項１記載の半導体装置。 2. The semiconductor device according to claim 1, wherein the height of the ball bumps stacked in two stages is a dimension that ensures a clearance between the first and second semiconductor chips . 前記積層された各半導体チップとインタポーザ基板との間はそれぞれ金ワイヤーで電気的に接続され、各金ワイヤーの半導体チップ側は最上段の半導体チップ以外下段側の半導体チップのボールバンプを経由して下段側の半導体チップの電極パッドと接続されていることを特徴とする請求項１記載の半導体装置。The stacked semiconductor chips and the interposer substrate are electrically connected with gold wires, respectively, and the semiconductor chip side of each gold wire passes through the ball bumps of the lower semiconductor chip other than the uppermost semiconductor chip. 2. The semiconductor device according to claim 1, wherein the semiconductor device is connected to an electrode pad of a lower semiconductor chip. 前記金ワイヤーは、積層された半導体チップ間のクリアランス内に納まるととも上段側の半導体チップの下面と接触しない高さに金ワイヤーループが形成されていることを特徴とする請求項３記載の半導体装置。4. The semiconductor according to claim 3 , wherein the gold wire is placed within a clearance between the stacked semiconductor chips and a gold wire loop is formed at a height that does not contact the lower surface of the upper semiconductor chip. apparatus.
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