JP4160013B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4160013B2 JP4160013B2 JP2004130621A JP2004130621A JP4160013B2 JP 4160013 B2 JP4160013 B2 JP 4160013B2 JP 2004130621 A JP2004130621 A JP 2004130621A JP 2004130621 A JP2004130621 A JP 2004130621A JP 4160013 B2 JP4160013 B2 JP 4160013B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
図33を用いて、従来のTFTの特性と比較して、本発明の利点を説明する。
本実施形態は本発明をTFTに適用したものである。図1〜図4を用いて、本実施形態の作製工程を説明する。
図5、図6を用いて、本実施形態のTFTの作製工程について説明する。本実施形態は実施形態1の変形例であり、ゲート電極(ゲート配線)の構造を変形したものであり、他の主要構造は実施形態1と同様である。
図7を用いて、本実施形態のTFTの作製工程について説明する。本実施形態も実施形態1の変形例であり、ゲート電極(ゲート配線)の構造の変形したものであり、他の主要構造は実施形態1と同様である。なお図7において、図1、図2と同じ符号は同じ構成要素を示している。
本実施形態は、実施形態1及び実施形態2の変形例である。実施形態1、2ではゲート電極のテーパー部での厚さはほぼ線形に変化している。本実施形態では、テーパー部の厚さを非線形に変化させたものである。
上記作製工程に従って形成した半導体層は、微視的に見れば複数の針状又は棒状の結晶(以下、棒状結晶と略記する)が集まって並んだ結晶構造を有する。このことはTEM(透過型電子顕微鏡法)による観察で容易に確認できた。
本実施例で作製したTFTは、MOSFETに匹敵する電気特性を示した。本出願人が試作したTFTからは次に示す様なデータが得られている。
次に、本実施例を実施して形成したTFTを用いて作製されたリングオシレータによる周波数特性を示す。リングオシレータとはCMOS構造でなるインバータ回路を奇数段リング状に接続した回路であり、インバータ回路1段あたりの遅延時間を求めるのに利用される。実験に使用したリングオシレータの構成は次の様になっている。
段数:9段
TFTのゲイト絶縁膜の膜厚:30nm及び50nm
TFTのゲイト長: 0.6μm
Claims (4)
- 半導体層と、前記半導体層上のゲート絶縁膜と、前記ゲート絶縁膜上の第1のゲート電極と、前記第1のゲート電極上の第2のゲート電極とを有する薄膜トランジスタを有し、
前記第1のゲート電極は前記第2のゲート電極よりもチャネル長方向の幅が長く、端部にテーパー部を有し、
前記半導体層は、チャネル形成領域、一対の第1の不純物領域、一対の第2の不純物領域、及び一対の第3の不純物領域を有し、
一対の前記第1の不純物領域、一対の前記第2の不純物領域、及び一対の第3の不純物領域には、一導電型を付与する不純物が添加され、
一対の前記第2の不純物領域は前記チャネル形成領域を間に挟んで設けられ、
一対の前記第3の不純物領域は前記チャネル形成領域及び一対の前記第2の不純物領域を間に挟んで設けられ、
一対の前記第1の不純物領域は前記チャネル形成領域、一対の前記第2の不純物領域、及び一対の前記第3の不純物領域を間に挟んで設けられ、
一対の前記第1の不純物領域は、一対の前記第2の不純物領域及び一対の前記第3の不純物領域よりも前記一導電型を付与する不純物の濃度が高く、ソース領域及びドレイン領域として機能し、
一対の前記第2の不純物領域は、前記第1のゲート電極のテーパー部と重なり、
一対の前記第3の不純物領域は、前記第1のゲート電極と重ならず、
前記チャネル形成領域は、前記第1のゲート電極及び前記第2のゲート電極と重なり、
前記半導体層は前記ゲート絶縁膜に覆われていることを特徴とする半導体装置。 - 請求項1において、
前記第1のゲート電極のテーパー部の側面と前記ゲート絶縁膜の表面のなす角度は3度以上60度以下であることを特徴とする半導体装置。 - nチャネル型薄膜トランジスタ及びpチャネル型薄膜トランジスタを有し、
前記nチャネル型薄膜トランジスタは、第1の半導体層、前記第1の半導体層上のゲート絶縁膜、前記ゲート絶縁膜上の第1のゲート電極、及び前記第1のゲート電極上の第2のゲート電極を有し、
前記pチャネル型薄膜トランジスタは、第2の半導体層、前記第2の半導体層上の前記ゲート絶縁膜、及び前記ゲート絶縁膜上の第3のゲート電極、及び前記第3のゲート電極上の第4のゲート電極を有し、
前記第1のゲート電極は、前記第2のゲート電極よりもチャネル長方向の幅が長く、端部にテーパー部を有し、
前記第3のゲート電極は、前記第4のゲート電極よりもチャネル長方向の幅が長く、端部にテーパー部を有し、
前記第1の半導体層は、第1のチャネル形成領域、一対の第1の不純物領域、一対の第2の不純物領域、及び一対の第3の不純物領域を有し、
前記第2の半導体層は、第2のチャネル形成領域、一対の第4の不純物領域を有し、
一対の前記第2の不純物領域は前記第1のチャネル形成領域を間に挟んで設けられ、
一対の前記第3の不純物領域は前記第1のチャネル形成領域及び一対の前記第2の不純物領域を間に挟んで設けられ、
一対の前記第1の不純物領域は前記第1のチャネル形成領域、一対の前記第2の不純物領域、及び一対の前記第3の不純物領域を間に挟んで設けられ、
一対の前記第4の不純物領域は前記第2のチャネル形成領域を間に挟んで設けられ、
前記第1のチャネル形成領域は、前記第1のゲート電極及び前記第2のゲート電極と重なり、
一対の前記第2の不純物領域は、前記第1のゲート電極のテーパー部と重なり、
一対の前記第3の不純物領域は、前記第1のゲート電極と重ならず、
一対の前記第1の不純物領域、一対の前記第2の不純物領域、及び一対の前記第3の不純物領域は、n型を示し、
一対の前記第1の不純物領域は、一対の前記第2の不純物領域及び一対の前記第3の不純物領域よりもn型を付与する不純物の濃度が高く、ソース領域及びドレイン領域として機能し、
前記第2のチャネル形成領域は、前記第3のゲート電極及び前記第4のゲート電極と重なり、
一対の前記第4の不純物領域はp型を示し、ソース領域及びドレイン領域として機能し、
前記第1の半導体層及び前記第2の半導体層は前記ゲート絶縁膜に覆われていることを特徴とする半導体装置。 - 請求項3において、
前記第1のゲート電極及び前記第3のゲート電極のテーパー部の側面と前記ゲート絶縁膜の表面のなす角度は3度以上60度以下であることを特徴とする半導体装置。
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