JP4157886B2 - Cmosイメージセンサの製造方法 - Google Patents
Cmosイメージセンサの製造方法 Download PDFInfo
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- JP4157886B2 JP4157886B2 JP2005270580A JP2005270580A JP4157886B2 JP 4157886 B2 JP4157886 B2 JP 4157886B2 JP 2005270580 A JP2005270580 A JP 2005270580A JP 2005270580 A JP2005270580 A JP 2005270580A JP 4157886 B2 JP4157886 B2 JP 4157886B2
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- photodiode
- image sensor
- cmos image
- oxide film
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910021480 group 4 element Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Description
従来のCMOSイメージセンサの単位画素は、図1に示したように、1つのフォトダイオードと4つのMOSトランジスタで構成される。即ち、光を受けて光電荷を生成するフォトダイオード100と、フォトダイオード100で集められた光電荷をフローティング拡散領域102に運送するためのトランスファトランジスタ101と、所望値でフローティング拡散領域102の電位をセッティングし、電荷を排出してフローティング拡散領域102をリセットさせるためのリセットトランジスタ103と、ソースファロウァバッファ増幅器の役割をするドライブトランジスタ104と、スイッチングの役割でアドレッシングができるようにするセレクトトランジスタ105とで構成されている。
このようにフォトダイオードの表面特性が悪化することで、半導体基板上に形成されたシリコン格子構造に誤整列の状態が発生する。
第二に、フォトダイオードの入射光量を増加させ、イメージセンサの特性を向上させることができる。
図3a乃至図3dは、本発明に係るCMOSイメージセンサの製造工程を示す断面図で、フォトダイオード領域と、これに隣接したトランスファトランジスタを中心に示した図面である。
次いで、トランジスタのゲート電極22の上部を含む半導体基板21の全面にフォトレジストPRを塗布した後、図3cに示したように、前記フォトダイオード領域24が露出するように、前記フォトレジストPRをパターニングする。即ち、フォトダイオード領域24を除いた領域は、フォトレジストによってマスキングされる。
この際、前記フォトダイオード領域24にシリコンのような4族元素のゲルマニウムを10〜20keV程度の弱いエネルギーで注入して、半導体基板21、つまりシリコン表面の格子構造を分解させる。ここで、最も好ましいイオン注入エネルギーは15keV程度であれば良好である。
22 ゲート電極
22a スペーサ
23 障壁酸化膜
24 フォトダイオード
25 表面酸化膜
Claims (4)
- 半導体基板にフォトダイオード領域を形成する段階と、
4族元素グループのイオンを前記フォトダイオード領域に注入して格子構造を分解する段階と、
格子構造が分解された前記フォトダイオード領域の表面に酸化膜を形成する段階と
を備えることを特徴とするCMOSイメージセンサの製造方法。 - 前記酸化膜を形成する段階は、前記フォトダイオード領域の表面を熱酸化することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記半導体基板は、前記フォトダイオード領域を形成する段階で障壁酸化膜を有し、前記イオン注入段階の前に前記障壁酸化膜を除去する段階を更に備えることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記イオンは、10keV〜20keVのエネルギーで注入されることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040075443A KR100741933B1 (ko) | 2004-09-21 | 2004-09-21 | 씨모스 이미지 센서의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006093704A JP2006093704A (ja) | 2006-04-06 |
JP4157886B2 true JP4157886B2 (ja) | 2008-10-01 |
Family
ID=36073025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005270580A Expired - Fee Related JP4157886B2 (ja) | 2004-09-21 | 2005-09-16 | Cmosイメージセンサの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7381584B2 (ja) |
JP (1) | JP4157886B2 (ja) |
KR (1) | KR100741933B1 (ja) |
CN (1) | CN100413052C (ja) |
DE (1) | DE102005044902B4 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100772316B1 (ko) * | 2006-04-28 | 2007-10-31 | 매그나칩 반도체 유한회사 | 플라즈마손상으로부터 포토다이오드를 보호하는 씨모스이미지센서의 제조 방법 |
KR100828942B1 (ko) * | 2006-12-19 | 2008-05-13 | (주)실리콘화일 | 4t-4s 스텝 & 리피트 단위 셀 및 상기 단위 셀을 구비한 이미지센서, 데이터 저장장치, 반도체 공정 마스크, 반도체 웨이퍼 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1225139A (en) | 1982-09-17 | 1987-08-04 | J. Thomas Tiedje | Optical absorption enhancement in amorphous silicon deposited on rough substrate |
JPS62190872A (ja) * | 1986-02-18 | 1987-08-21 | Matsushita Electronics Corp | 受光素子の製造方法 |
US6211560B1 (en) * | 1995-06-16 | 2001-04-03 | The United States Of America As Represented By The Secretary Of The Air Force | Voltage tunable schottky diode photoemissive infrared detector |
US5671914A (en) | 1995-11-06 | 1997-09-30 | Spire Corporation | Multi-band spectroscopic photodetector array |
JP2002151729A (ja) * | 2000-11-13 | 2002-05-24 | Sony Corp | 半導体装置及びその製造方法 |
KR100752675B1 (ko) * | 2001-12-20 | 2007-08-29 | 삼성전자주식회사 | Cmos를 갖는 이미지 센서 및 그의 제조방법 |
US6828234B2 (en) * | 2002-03-26 | 2004-12-07 | Applied Materials, Inc. | RTP process chamber pressure control |
KR100508086B1 (ko) * | 2002-09-11 | 2005-08-17 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR20040058692A (ko) * | 2002-12-27 | 2004-07-05 | 주식회사 하이닉스반도체 | 포토다이오드의 표면을 보호하는 막을 구비한 시모스이미지센서 및 그 제조방법 |
US6974715B2 (en) * | 2002-12-27 | 2005-12-13 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor using spacer etching barrier film |
KR20040058697A (ko) * | 2002-12-27 | 2004-07-05 | 주식회사 하이닉스반도체 | 포토다이오드의 표면결함을 치료하는 시모스 이미지센서및 그 제조방법 |
JP2004228425A (ja) * | 2003-01-24 | 2004-08-12 | Renesas Technology Corp | Cmosイメージセンサの製造方法 |
JP2004335588A (ja) * | 2003-05-01 | 2004-11-25 | Renesas Technology Corp | 固体撮像装置及びその製造方法 |
US7148525B2 (en) * | 2004-01-12 | 2006-12-12 | Micron Technology, Inc. | Using high-k dielectrics in isolation structures method, pixel and imager device |
-
2004
- 2004-09-21 KR KR1020040075443A patent/KR100741933B1/ko not_active IP Right Cessation
-
2005
- 2005-08-31 US US11/217,575 patent/US7381584B2/en not_active Expired - Fee Related
- 2005-09-16 JP JP2005270580A patent/JP4157886B2/ja not_active Expired - Fee Related
- 2005-09-20 CN CNB2005101031671A patent/CN100413052C/zh not_active Expired - Fee Related
- 2005-09-20 DE DE102005044902A patent/DE102005044902B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006093704A (ja) | 2006-04-06 |
US20060060898A1 (en) | 2006-03-23 |
US7381584B2 (en) | 2008-06-03 |
DE102005044902B4 (de) | 2009-11-12 |
DE102005044902A1 (de) | 2006-04-20 |
KR20060026626A (ko) | 2006-03-24 |
CN1753167A (zh) | 2006-03-29 |
CN100413052C (zh) | 2008-08-20 |
KR100741933B1 (ko) | 2007-07-23 |
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