JP4146365B2 - 光電変換装置及び駆動方法 - Google Patents
光電変換装置及び駆動方法 Download PDFInfo
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- JP4146365B2 JP4146365B2 JP2004019667A JP2004019667A JP4146365B2 JP 4146365 B2 JP4146365 B2 JP 4146365B2 JP 2004019667 A JP2004019667 A JP 2004019667A JP 2004019667 A JP2004019667 A JP 2004019667A JP 4146365 B2 JP4146365 B2 JP 4146365B2
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- Prior art keywords
- photoelectric conversion
- turned
- period
- capacitor
- current source
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 title claims description 89
- 238000000034 method Methods 0.000 title description 6
- 239000003990 capacitor Substances 0.000 claims description 65
- 230000003287 optical effect Effects 0.000 claims description 45
- 230000003321 amplification Effects 0.000 claims description 12
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 35
- 230000000875 corresponding effect Effects 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 14
- 238000009825 accumulation Methods 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000002596 correlated effect Effects 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
2 リセットスイッチ
3 アンプ
4 転送スイッチ
5 容量
6 MOSトランジスタ
7 チャンネル選択スイッチ
8 第1の電流源
9 寄生容量
10,12,13,14 アンプイネーブル端子
11 共通信号線
15 第1のアンプ
16 第2のアンプ
17 第3のアンプ
18 第1の転送スイッチ
19 第2の転送スイッチ
20 第3の転送スイッチ
21 第1の容量
22 第2の容量
23 第3の容量
30 MOSソースフォロア
31 電流源
32 トランスミッションゲート
33 ダミースイッチ
34 MOS電流源
35 MOSスイッチ
36 MOSスイッチ
37 MOS電流源
38、40、42 MOSソースフォロア
39、41、43 電流源
32 トランスミッションゲート
44、45 MOSスイッチ
51 第2の電流源
101 フォトダイオード
102 リセットスイッチ
103 ソースフォロアアンプ
104 定電流源
105 読み出しスイッチ
106 共通信号線
107 信号線リセットスイッチ
108 寄生容量
109 オペアンプ
110 抵抗
111 抵抗
112 チップセレクトスイッチ
113 容量
114 MOSトランジスタ
115 容量
116 出力端子
An nビット目の光電変換ブロック
Bm mチップ目のイメージセンサICブロック
C クランプ回路
D 反転増幅器
Claims (3)
- 入射した光に応じて光信号を発生する光電変換手段と、
前記光電変換手段の出力に接続されたリセット手段と、
前記光電変換手段の出力に接続された増幅手段と、
前記増幅手段の出力に一方の端子が接続された電荷転送手段と、
前記電荷転送手段のもう一方の端子に接続された容量と、
前記電荷転送手段のもう一方の端子に入力が接続されたソースフォロワアンプと、
前記ソースフォロワアンプの出力に接続されたチャンネル選択手段と、
前記チャンネル選択手段の出力が接続された共通信号線と、
前記共通信号線に接続された第1の電流源と、
前記ソースフォロワアンプの出力に接続された第2の電流源と、
を有することを特徴とする光電変換装置。 - 前記電荷転送手段と前記チャンネル選択手段がオンして、前記光信号を前記共通信号線に読み出しているときに、前記第1の電流源がオンし、
前記電荷転送手段がオンし、前記基準信号を前記容量に読み出しているときに、前記第2の電流源がオンする
ことを特徴とする請求項1記載の光電変換装置。 - 第1の期間において、前記容量は前記リセット手段が前記光電変換手段をリセットすることにより生じる基準信号を保持し、
第2の期間において、前記光電変換手段は入射した光に応じた光信号を発生し、
第3の期間において、前記チャンネル選択手段がオンして、前記容量から第1の期間に保持した基準信号を前記共通信号線に読み出し、
第4の期間において、前記電荷転送手段がオンして、前期第2の期間に前記光電変換手段に発生した光信号を前記共通信号線に読み出す、
ことを特徴とする請求項1または2記載の光電変換装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004019667A JP4146365B2 (ja) | 2003-02-26 | 2004-01-28 | 光電変換装置及び駆動方法 |
US10/784,419 US7102115B2 (en) | 2003-02-26 | 2004-02-23 | Photoelectric converter and a method of driving the same |
CNB2004100067883A CN100394758C (zh) | 2003-02-26 | 2004-02-26 | 光电转换器和驱动它的方法 |
US11/501,630 US7394054B2 (en) | 2003-02-26 | 2006-08-09 | Photoelectric converter and a method of driving the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003049572 | 2003-02-26 | ||
JP2003048592 | 2003-02-26 | ||
JP2004019667A JP4146365B2 (ja) | 2003-02-26 | 2004-01-28 | 光電変換装置及び駆動方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004282716A JP2004282716A (ja) | 2004-10-07 |
JP2004282716A5 JP2004282716A5 (ja) | 2007-02-15 |
JP4146365B2 true JP4146365B2 (ja) | 2008-09-10 |
Family
ID=33303675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004019667A Expired - Fee Related JP4146365B2 (ja) | 2003-02-26 | 2004-01-28 | 光電変換装置及び駆動方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7102115B2 (ja) |
JP (1) | JP4146365B2 (ja) |
CN (1) | CN100394758C (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9077022B2 (en) * | 2004-10-29 | 2015-07-07 | Medtronic, Inc. | Lithium-ion battery |
JP4614286B2 (ja) * | 2006-06-12 | 2011-01-19 | セイコーインスツル株式会社 | 光電変換装置、イメージセンサ、光学読み取り装置 |
JP5004327B2 (ja) * | 2006-08-08 | 2012-08-22 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP2008219282A (ja) * | 2007-03-01 | 2008-09-18 | Seiko Instruments Inc | 光電変換装置 |
JP5305387B2 (ja) * | 2007-12-25 | 2013-10-02 | セイコーインスツル株式会社 | 光検出装置、及び画像表示装置 |
JP5296417B2 (ja) * | 2008-05-29 | 2013-09-25 | セイコーインスツル株式会社 | 光電変換装置 |
JP5288965B2 (ja) * | 2008-09-22 | 2013-09-11 | キヤノン株式会社 | 固体撮像装置及びその駆動方法 |
JP5257176B2 (ja) * | 2009-03-18 | 2013-08-07 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法および電子機器 |
US8754610B2 (en) * | 2009-05-22 | 2014-06-17 | Qualcomm Incorporated | System and method for supplying power to a load |
JP2011176552A (ja) * | 2010-02-24 | 2011-09-08 | Renesas Electronics Corp | 光増幅回路及びフォトカプラ |
JP5482286B2 (ja) * | 2010-02-25 | 2014-05-07 | ソニー株式会社 | 放射線撮像装置およびその駆動方法 |
JP5713651B2 (ja) | 2010-12-10 | 2015-05-07 | キヤノン株式会社 | 光電変換装置、カメラシステム及び光電変換装置の駆動方法 |
KR101982278B1 (ko) * | 2012-03-26 | 2019-08-28 | 삼성전자주식회사 | 디지털 실리콘 광전자 증배관 디텍터 셀 |
JP2015133617A (ja) * | 2014-01-14 | 2015-07-23 | 株式会社東芝 | 増幅回路、a/d変換器、及び通信装置 |
KR102422059B1 (ko) * | 2014-07-18 | 2022-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 촬상 장치, 및 전자 기기 |
US11750944B2 (en) * | 2021-05-28 | 2023-09-05 | Varex Imaging Corporation | Pixel noise cancellation system |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6369853B1 (en) * | 1997-11-13 | 2002-04-09 | Foveon, Inc. | Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications |
JP3933972B2 (ja) * | 2001-04-19 | 2007-06-20 | セイコーインスツル株式会社 | 光電変換装置 |
-
2004
- 2004-01-28 JP JP2004019667A patent/JP4146365B2/ja not_active Expired - Fee Related
- 2004-02-23 US US10/784,419 patent/US7102115B2/en not_active Expired - Lifetime
- 2004-02-26 CN CNB2004100067883A patent/CN100394758C/zh not_active Expired - Fee Related
-
2006
- 2006-08-09 US US11/501,630 patent/US7394054B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004282716A (ja) | 2004-10-07 |
CN1543186A (zh) | 2004-11-03 |
US20060266932A1 (en) | 2006-11-30 |
US7102115B2 (en) | 2006-09-05 |
US7394054B2 (en) | 2008-07-01 |
CN100394758C (zh) | 2008-06-11 |
US20050035273A1 (en) | 2005-02-17 |
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