JP4143355B2 - Crystal element for piezoelectric sensor - Google Patents
Crystal element for piezoelectric sensor Download PDFInfo
- Publication number
- JP4143355B2 JP4143355B2 JP2002226270A JP2002226270A JP4143355B2 JP 4143355 B2 JP4143355 B2 JP 4143355B2 JP 2002226270 A JP2002226270 A JP 2002226270A JP 2002226270 A JP2002226270 A JP 2002226270A JP 4143355 B2 JP4143355 B2 JP 4143355B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal element
- piezoelectric sensor
- base
- nail
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 230000007704 transition Effects 0.000 claims description 5
- 238000010923 batch production Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000036316 preload Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 1
- 230000000717 retained effect Effects 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract 2
- 239000004033 plastic Substances 0.000 abstract 2
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000154 gallium phosphate Inorganic materials 0.000 description 1
- LWFNJDOYCSNXDO-UHFFFAOYSA-K gallium;phosphate Chemical compound [Ga+3].[O-]P([O-])([O-])=O LWFNJDOYCSNXDO-UHFFFAOYSA-K 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
- G01P15/0922—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up of the bending or flexing mode type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/886—Additional mechanical prestressing means, e.g. springs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】
【発明の属する技術分野】
本発明は圧電センサ用結晶素子に関し、詳細にはいわゆる釘形結晶に関する。
【0002】
【従来の技術】
圧力、力および加速度を測定するための圧電度量衡学においては、主として、結晶性水晶または他の圧電性結晶の結晶素子が使用され、様々な切断技法を用いて円板またはロッドに形状化されている。結晶素子は、予荷重の下で2つの平行平面力伝達表面の間に固定された後、測定すべき力が印加される。
【0003】
ロッド形構造は、円板形を要する縦効果よりも強い電気信号をもたらす横効果を利用している。対称にするために、ほとんどの場合、多数のロッド形素子が、最新技術を示す図1および2に示すように組み付けられている。
【0004】
【発明が解決しようとする課題】
本発明による釘形結晶は、取付けのための補助部材を必要としない、また、低コスト連続取付けに適したロッド形素子の製作を目的として開発されたものである。
【0005】
【課題を解決するための手段】
上記目的は、高感度ロッド信号部分とベースとからなる一体型の結晶素子によって実現される。
【0006】
【発明の実施の形態】
次に、本発明を、図1から図10を参照して説明する。
【0007】
図5および6から分かるように、本発明による釘形結晶10は、ロッド部分11およびベース(基部)12から成り、予荷重の下で力導入表面21と力誘導表面22の間に拘束され、同時に結晶の測定信号を信号ラインに伝送する。釘形結晶のベース12には、力導入表面21の心出しリング20を通す心出し表面13が設けられている。ロッド部分11からベース12への遷移部分は、丸み表面23によって形成されている。この組立体により、偏心誤差μを極めて小さい値に維持することができる。
【0008】
図6は、個別の素子に切断された後、円形研削によって生成される4つの心出し表面13を備えたベース12の形態を示している。ベースの正方形または長方形の平面は、釘形結晶がバッチ生産されるウェハの厚さWdによって定まる。
【0009】
図7は、同じ釘形結晶10を斜視図で示している。非金属化されているため、金属化された後、研削される絶縁性表面14をより明確に見て取ることができる。遷移丸み部18、19は、バッチ生産における切断操作によって自動的に非金属化される。
【0010】
したがって釘形結晶は、それ自体がレンズ(lends)を形成し、大量生産の効率を高めている。ウェハは、生産プロセスにおいて完全に金属化される。結晶の2つの端面16、17を利用して信号が導かれる。
【0011】
厚さWdのウェハからのバッチ処理は、通常の生産方法によって実現されるため、ここでは詳細は省略する。
【0012】
図8は、本発明による釘形結晶の変形例を示し、この変形例は直径Dの円形ベース12を有し、心出しリング20中に嵌合する。この釘形結晶はバッチ生産が可能であり、あるいは丸棒から生産することができる。
【0013】
図9は、本発明の概念による、二重釘形結晶(24)の形態の他の変形例を示している。図9では、ロッド部分11は、切り込み28によって2つの部分に分割されている。この切り込みの底部は絶縁性表面25になっており、金属化物を分離している。他の遷移丸み部15および絶縁および心出し表面13は、図5、6および7と同様であり、図9では、個別プロセスも可能ではあるが、ウェハ生産プロセスに対応している。
【0014】
図10は、図9の変形例を平面図で示している。
【0015】
本発明による釘形結晶により、今までは、300℃を超える高いセンサ温度以上ではその絶縁性能が悪影響を受ける耐温材からなる、余計な取付け手段および心出し手段を必要としない簡易センサ組立体の新規な品質を可能にする。
【0016】
表面21および22の平行度の些細な誤差αは、単一釘形結晶については誤差を生じないという可能性により、バッチの合格率が高くなり、歩留まりが向上する。
【0017】
本発明による釘形結晶は、水晶であれ、ガリウムリン酸塩であれ、あるいは他いくつかの圧電結晶であれ、結晶のタイプには無関係である。
【0018】
重要なことは、本発明による釘形結晶は、ウェハから効率良く処理することができる、ということである。
【図面の簡単な説明】
【図1】Teflon(登録商標)またはKaptonの支持スリーブ2中に保持されたロッド1の結晶素子を示す図である。このようにして、幾何形状の異なるロッドを用いることができる。
【図2】図1の平面図である。
【図3】例えばクランプ・カラーを意図した、コイルばねによって外壁3に押し付けられ、結晶が確実に保持される三重配置を示す図である。図1および3のいずれの構造も、多数の変形態様が市販されている。
【図4】図3の平面図である。
【図5】結晶を取り囲むセンサ部分を備えた、本発明による釘形結晶の正面図である。
【図6】本発明による釘形結晶の平面図である。
【図7】本発明による釘形結晶の斜視図である。
【図8】本発明による釘形結晶の変形例の斜視図である。
【図9】本発明による釘形結晶の他の変形例を、二重釘として示す図である。
【図10】図9の平面図である。
【符号の説明】
1 圧電結晶(ロッド)
2 ガイド・ケージ(支持スリーブ)
3 拘束スリーブ(外壁)
4 結晶セット
10 釘形結晶
11 ロッド部分
12 ベース
13 心出し表面
14 絶縁性表面
15 遷移丸み部
16、17 金属化端面
18、19 絶縁横方向表面
20 心出しリング
21 力導入表面
22 力誘導表面
23 丸み表面
24 二重釘形結晶
25 ベース絶縁性表面
26 横方向絶縁性表面
27 円形絶縁性表面
28 切り込み
α 力導入表面と力誘導表面の間の平行度誤差
μ 結晶軸とセンサ軸の間の偏心誤差
Wd ウェハ厚さ
D 誘導径[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a crystal element for a piezoelectric sensor, and more particularly to a so-called nail-shaped crystal.
[0002]
[Prior art]
In piezoelectric metrology for measuring pressure, force and acceleration, crystalline crystal or other piezoelectric crystal crystal elements are mainly used and shaped into disks or rods using various cutting techniques. Yes. After the crystal element is fixed between two parallel plane force transmitting surfaces under preload, a force to be measured is applied.
[0003]
The rod-shaped structure utilizes a lateral effect that provides a stronger electrical signal than a longitudinal effect that requires a disk shape. In order to be symmetric, in most cases a large number of rod-shaped elements are assembled as shown in FIGS. 1 and 2, which shows the state of the art.
[0004]
[Problems to be solved by the invention]
The nail-shaped crystal according to the present invention has been developed for the purpose of manufacturing a rod-shaped element that does not require an auxiliary member for mounting and is suitable for low-cost continuous mounting.
[0005]
[Means for Solving the Problems]
The above object is realized by an integrated crystal element composed of a high sensitivity rod signal portion and a base.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described with reference to FIGS.
[0007]
As can be seen from FIGS. 5 and 6, the nail-
[0008]
FIG. 6 shows the form of the
[0009]
FIG. 7 shows the same nail-
[0010]
Thus, the nail-shaped crystals themselves form lenses and increase the efficiency of mass production. The wafer is completely metallized in the production process. A signal is derived using the two end faces 16, 17 of the crystal.
[0011]
Since batch processing from a wafer having a thickness Wd is realized by a normal production method, details are omitted here.
[0012]
FIG. 8 shows a variant of a nail-shaped crystal according to the invention, which has a
[0013]
FIG. 9 shows another variant of the form of a double nail-shaped crystal (24) according to the inventive concept. In FIG. 9, the
[0014]
FIG. 10 shows a modification of FIG. 9 in a plan view.
[0015]
Up to now, the nail-shaped crystal according to the present invention is a simple sensor assembly made of a heat-resistant material whose insulation performance is adversely affected at a high sensor temperature exceeding 300 ° C., and which does not require extra mounting means and centering means. Allows for new quality.
[0016]
The minor error α in the parallelism of the
[0017]
The nail-shaped crystal according to the present invention is independent of the type of crystal, whether it is quartz, gallium phosphate, or some other piezoelectric crystal.
[0018]
Importantly, the nail-shaped crystals according to the invention can be processed efficiently from the wafer.
[Brief description of the drawings]
FIG. 1 shows a crystal element of a rod 1 held in a Teflon® or Kapton
2 is a plan view of FIG. 1. FIG.
FIG. 3 shows a triple arrangement in which, for example a clamping collar is intended, pressed against the
4 is a plan view of FIG. 3;
FIG. 5 is a front view of a nail-shaped crystal according to the present invention with a sensor portion surrounding the crystal.
FIG. 6 is a plan view of a nail-shaped crystal according to the present invention.
FIG. 7 is a perspective view of a nail-shaped crystal according to the present invention.
FIG. 8 is a perspective view of a modified example of a nail-shaped crystal according to the present invention.
FIG. 9 is a view showing another modified example of the nail-shaped crystal according to the present invention as a double nail.
FIG. 10 is a plan view of FIG. 9;
[Explanation of symbols]
1 Piezoelectric crystal (rod)
2 Guide cage (support sleeve)
3 Restraint sleeve (outer wall)
4 Crystal set 10 Nail-shaped
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH14182001 | 2001-08-02 | ||
CH20011418/01 | 2001-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003130739A JP2003130739A (en) | 2003-05-08 |
JP4143355B2 true JP4143355B2 (en) | 2008-09-03 |
Family
ID=4565462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002226270A Expired - Fee Related JP4143355B2 (en) | 2001-08-02 | 2002-08-02 | Crystal element for piezoelectric sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4143355B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009025065A (en) * | 2007-07-18 | 2009-02-05 | Hiroshima Univ | Pressure sensor and distributed pressure sensor using the same |
-
2002
- 2002-08-02 JP JP2002226270A patent/JP4143355B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2003130739A (en) | 2003-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102071852B1 (en) | Micromechanical structure and method for manufacturing the same | |
JP3500105B2 (en) | Support for conductive contact and contact probe unit | |
US5147824A (en) | Semiconductor wafer | |
JP4143355B2 (en) | Crystal element for piezoelectric sensor | |
JP2000100882A (en) | Manufacture of semiconductor device, test method, and jig used therefor | |
US4165402A (en) | Chip-removing machining method and apparatus for semiconducting crystals, specifically suited for the production of force and pressure measuring cells | |
US3848329A (en) | Method for producing a semiconductor strain sensitive element of an electromechanical semiconductor transducer | |
KR20160104561A (en) | Magnetic sensor and method of manufacturing the same | |
US4180892A (en) | Method for the manufacture of a force transducer | |
EP0100501B1 (en) | Vibration sensor | |
CN110400772B (en) | Electrostatic chuck and semiconductor processing equipment | |
JP3551745B2 (en) | Manufacturing method of semiconductor acceleration sensor | |
US5456117A (en) | Pressure sensor apparatus and method of manufacturing wherein the silicon-crystal substrate of the sensor has inclined crystallographic axes and gage resistors formed in a cavity of the substrate | |
CN112683628A (en) | Rapid preparation method of non-conductive and non-magnetic ceramic material test sample strip | |
CN220440680U (en) | Tuning fork type wafer clamp | |
KR102045105B1 (en) | Methods of attaching a module on wafer substrate | |
CN114800926B (en) | Method for processing polymer microsphere by ion beam | |
Haskell et al. | State-of-the-art in the design and manufacture of low acceleration sensitivity resonators | |
JPH07174941A (en) | Optical element coupling module for optical communication and its production | |
JP3493885B2 (en) | Manufacturing method of semiconductor acceleration sensor | |
US20030218264A1 (en) | Method of producing optical element forming die | |
JPH07118889B2 (en) | Method for manufacturing hollow core shaft material | |
CN112705910A (en) | Processing method of elastomer special for sensor | |
JP4291438B2 (en) | Method for producing conductive ceramic molded product | |
JPH1158197A (en) | Shape measuring method of optical element and manufacture thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050624 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080411 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080606 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080616 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110620 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110620 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120620 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120620 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130620 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |