JP4143355B2 - Crystal element for piezoelectric sensor - Google Patents

Crystal element for piezoelectric sensor Download PDF

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JP4143355B2
JP4143355B2 JP2002226270A JP2002226270A JP4143355B2 JP 4143355 B2 JP4143355 B2 JP 4143355B2 JP 2002226270 A JP2002226270 A JP 2002226270A JP 2002226270 A JP2002226270 A JP 2002226270A JP 4143355 B2 JP4143355 B2 JP 4143355B2
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crystal element
piezoelectric sensor
base
nail
crystal
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JP2003130739A (en
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ブレヒビュール ステファン
ゾンマー ローランド
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キストラー ホールディング アクチエンゲゼルシャフト
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
    • G01P15/0922—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up of the bending or flexing mode type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/886—Additional mechanical prestressing means, e.g. springs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a low-cost crystal element for piezoelectric sensors that can be easily mounted. SOLUTION: The one-piece-type crystal element for piezoelectric sensors that easily centers a piezoelectric element, is retained in parallel with an axial direction, can introduce ideal force, assures insensitiveness to a small assembly error α, eliminates the need for a surplus auxiliary member for support and mounting, and comprises a high-sensitivity rod signal section (11) and a base (12). Therefore, the crystal element is a component that incorporates a sensor, can be easily adapted, can constantly assure accurate parallelism, and can reduce eccentricity μ in an ordinate, which makes so called a nail-type crystal suited for a continuous assembly. By batch processing from a wafer, the manufacturing costs of the nail-type crystal can be reduced. Regardless of the complex form in the nail-type crystal, the total assembly costs of the sensor can be kept low, and at the same time all plastic support means and retention means can be excluded, thus improving quality especially when an application range exceeds 300 deg.C when all plastics become unstable.

Description

【０００１】
【発明の属する技術分野】
本発明は圧電センサ用結晶素子に関し、詳細にはいわゆる釘形結晶に関する。
【０００２】
【従来の技術】
圧力、力および加速度を測定するための圧電度量衡学においては、主として、結晶性水晶または他の圧電性結晶の結晶素子が使用され、様々な切断技法を用いて円板またはロッドに形状化されている。結晶素子は、予荷重の下で２つの平行平面力伝達表面の間に固定された後、測定すべき力が印加される。
【０００３】
ロッド形構造は、円板形を要する縦効果よりも強い電気信号をもたらす横効果を利用している。対称にするために、ほとんどの場合、多数のロッド形素子が、最新技術を示す図１および２に示すように組み付けられている。
【０００４】
【発明が解決しようとする課題】
本発明による釘形結晶は、取付けのための補助部材を必要としない、また、低コスト連続取付けに適したロッド形素子の製作を目的として開発されたものである。
【０００５】
【課題を解決するための手段】
上記目的は、高感度ロッド信号部分とベースとからなる一体型の結晶素子によって実現される。
【０００６】
【発明の実施の形態】
次に、本発明を、図１から図１０を参照して説明する。
【０００７】
図５および６から分かるように、本発明による釘形結晶１０は、ロッド部分１１およびベース（基部）１２から成り、予荷重の下で力導入表面２１と力誘導表面２２の間に拘束され、同時に結晶の測定信号を信号ラインに伝送する。釘形結晶のベース１２には、力導入表面２１の心出しリング２０を通す心出し表面１３が設けられている。ロッド部分１１からベース１２への遷移部分は、丸み表面２３によって形成されている。この組立体により、偏心誤差μを極めて小さい値に維持することができる。
【０００８】
図６は、個別の素子に切断された後、円形研削によって生成される４つの心出し表面１３を備えたベース１２の形態を示している。ベースの正方形または長方形の平面は、釘形結晶がバッチ生産されるウェハの厚さＷｄによって定まる。
【０００９】
図７は、同じ釘形結晶１０を斜視図で示している。非金属化されているため、金属化された後、研削される絶縁性表面１４をより明確に見て取ることができる。遷移丸み部１８、１９は、バッチ生産における切断操作によって自動的に非金属化される。
【００１０】
したがって釘形結晶は、それ自体がレンズ（lends）を形成し、大量生産の効率を高めている。ウェハは、生産プロセスにおいて完全に金属化される。結晶の２つの端面１６、１７を利用して信号が導かれる。
【００１１】
厚さＷｄのウェハからのバッチ処理は、通常の生産方法によって実現されるため、ここでは詳細は省略する。
【００１２】
図８は、本発明による釘形結晶の変形例を示し、この変形例は直径Ｄの円形ベース１２を有し、心出しリング２０中に嵌合する。この釘形結晶はバッチ生産が可能であり、あるいは丸棒から生産することができる。
【００１３】
図９は、本発明の概念による、二重釘形結晶（２４）の形態の他の変形例を示している。図９では、ロッド部分１１は、切り込み２８によって２つの部分に分割されている。この切り込みの底部は絶縁性表面２５になっており、金属化物を分離している。他の遷移丸み部１５および絶縁および心出し表面１３は、図５、６および７と同様であり、図９では、個別プロセスも可能ではあるが、ウェハ生産プロセスに対応している。
【００１４】
図１０は、図９の変形例を平面図で示している。
【００１５】
本発明による釘形結晶により、今までは、３００℃を超える高いセンサ温度以上ではその絶縁性能が悪影響を受ける耐温材からなる、余計な取付け手段および心出し手段を必要としない簡易センサ組立体の新規な品質を可能にする。
【００１６】
表面２１および２２の平行度の些細な誤差αは、単一釘形結晶については誤差を生じないという可能性により、バッチの合格率が高くなり、歩留まりが向上する。
【００１７】
本発明による釘形結晶は、水晶であれ、ガリウムリン酸塩であれ、あるいは他いくつかの圧電結晶であれ、結晶のタイプには無関係である。
【００１８】
重要なことは、本発明による釘形結晶は、ウェハから効率良く処理することができる、ということである。
【図面の簡単な説明】
【図１】Ｔｅｆｌｏｎ（登録商標）またはＫａｐｔｏｎの支持スリーブ２中に保持されたロッド１の結晶素子を示す図である。このようにして、幾何形状の異なるロッドを用いることができる。
【図２】図１の平面図である。
【図３】例えばクランプ・カラーを意図した、コイルばねによって外壁３に押し付けられ、結晶が確実に保持される三重配置を示す図である。図１および３のいずれの構造も、多数の変形態様が市販されている。
【図４】図３の平面図である。
【図５】結晶を取り囲むセンサ部分を備えた、本発明による釘形結晶の正面図である。
【図６】本発明による釘形結晶の平面図である。
【図７】本発明による釘形結晶の斜視図である。
【図８】本発明による釘形結晶の変形例の斜視図である。
【図９】本発明による釘形結晶の他の変形例を、二重釘として示す図である。
【図１０】図９の平面図である。
【符号の説明】
１ 圧電結晶（ロッド）
２ ガイド・ケージ（支持スリーブ）
３ 拘束スリーブ（外壁）
４ 結晶セット
１０ 釘形結晶
１１ ロッド部分
１２ ベース
１３ 心出し表面
１４ 絶縁性表面
１５ 遷移丸み部
１６、１７ 金属化端面
１８、１９ 絶縁横方向表面
２０ 心出しリング
２１ 力導入表面
２２ 力誘導表面
２３ 丸み表面
２４ 二重釘形結晶
２５ ベース絶縁性表面
２６ 横方向絶縁性表面
２７ 円形絶縁性表面
２８ 切り込み
α 力導入表面と力誘導表面の間の平行度誤差
μ 結晶軸とセンサ軸の間の偏心誤差
Ｗｄ ウェハ厚さ
Ｄ 誘導径[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a crystal element for a piezoelectric sensor, and more particularly to a so-called nail-shaped crystal.
[0002]
[Prior art]
In piezoelectric metrology for measuring pressure, force and acceleration, crystalline crystal or other piezoelectric crystal crystal elements are mainly used and shaped into disks or rods using various cutting techniques. Yes. After the crystal element is fixed between two parallel plane force transmitting surfaces under preload, a force to be measured is applied.
[0003]
The rod-shaped structure utilizes a lateral effect that provides a stronger electrical signal than a longitudinal effect that requires a disk shape. In order to be symmetric, in most cases a large number of rod-shaped elements are assembled as shown in FIGS. 1 and 2, which shows the state of the art.
[0004]
[Problems to be solved by the invention]
The nail-shaped crystal according to the present invention has been developed for the purpose of manufacturing a rod-shaped element that does not require an auxiliary member for mounting and is suitable for low-cost continuous mounting.
[0005]
[Means for Solving the Problems]
The above object is realized by an integrated crystal element composed of a high sensitivity rod signal portion and a base.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described with reference to FIGS.
[0007]
As can be seen from FIGS. 5 and 6, the nail-shaped crystal 10 according to the present invention comprises a rod portion 11 and a base (base) 12 and is constrained between a force introduction surface 21 and a force induction surface 22 under a preload, At the same time, a crystal measurement signal is transmitted to the signal line. The base 12 of the nail-shaped crystal is provided with a centering surface 13 through which the centering ring 20 of the force introduction surface 21 passes. The transition from the rod part 11 to the base 12 is formed by a rounded surface 23. This assembly makes it possible to maintain the eccentricity error μ at a very small value.
[0008]
FIG. 6 shows the form of the base 12 with four centering surfaces 13 produced by circular grinding after being cut into individual elements. The base square or rectangular plane is determined by the thickness Wd of the wafer on which the nail-shaped crystals are batch produced.
[0009]
FIG. 7 shows the same nail-shaped crystal 10 in a perspective view. Because it is non-metallized, the insulating surface 14 that is ground after metallization can be seen more clearly. The transition rounds 18, 19 are automatically demetalized by a cutting operation in batch production.
[0010]
Thus, the nail-shaped crystals themselves form lenses and increase the efficiency of mass production. The wafer is completely metallized in the production process. A signal is derived using the two end faces 16, 17 of the crystal.
[0011]
Since batch processing from a wafer having a thickness Wd is realized by a normal production method, details are omitted here.
[0012]
FIG. 8 shows a variant of a nail-shaped crystal according to the invention, which has a circular base 12 with a diameter D and fits in a centering ring 20. The nail-shaped crystals can be produced in batches or can be produced from round bars.
[0013]
FIG. 9 shows another variant of the form of a double nail-shaped crystal (24) according to the inventive concept. In FIG. 9, the rod part 11 is divided into two parts by a notch 28. The bottom of the cut is an insulating surface 25 that separates the metallized material. The other transition rounds 15 and insulating and centering surfaces 13 are similar to FIGS. 5, 6 and 7 and correspond to the wafer production process in FIG. 9, although an individual process is possible.
[0014]
FIG. 10 shows a modification of FIG. 9 in a plan view.
[0015]
Up to now, the nail-shaped crystal according to the present invention is a simple sensor assembly made of a heat-resistant material whose insulation performance is adversely affected at a high sensor temperature exceeding 300 ° C., and which does not require extra mounting means and centering means. Allows for new quality.
[0016]
The minor error α in the parallelism of the surfaces 21 and 22 increases the batch acceptance rate and improves the yield due to the possibility of no error for a single nail crystal.
[0017]
The nail-shaped crystal according to the present invention is independent of the type of crystal, whether it is quartz, gallium phosphate, or some other piezoelectric crystal.
[0018]
Importantly, the nail-shaped crystals according to the invention can be processed efficiently from the wafer.
[Brief description of the drawings]
FIG. 1 shows a crystal element of a rod 1 held in a Teflon® or Kapton support sleeve 2; In this way, rods with different geometric shapes can be used.
2 is a plan view of FIG. 1. FIG.
FIG. 3 shows a triple arrangement in which, for example a clamping collar is intended, pressed against the outer wall 3 by a coil spring to ensure that the crystal is retained. Numerous variations of both structures in FIGS. 1 and 3 are commercially available.
4 is a plan view of FIG. 3;
FIG. 5 is a front view of a nail-shaped crystal according to the present invention with a sensor portion surrounding the crystal.
FIG. 6 is a plan view of a nail-shaped crystal according to the present invention.
FIG. 7 is a perspective view of a nail-shaped crystal according to the present invention.
FIG. 8 is a perspective view of a modified example of a nail-shaped crystal according to the present invention.
FIG. 9 is a view showing another modified example of the nail-shaped crystal according to the present invention as a double nail.
FIG. 10 is a plan view of FIG. 9;
[Explanation of symbols]
1 Piezoelectric crystal (rod)
2 Guide cage (support sleeve)
3 Restraint sleeve (outer wall)
4 Crystal set 10 Nail-shaped crystal 11 Rod portion 12 Base 13 Centering surface 14 Insulating surface 15 Transition rounds 16 and 17 Metallized end surfaces 18 and 19 Insulating lateral surface 20 Centering ring 21 Force introduction surface 22 Force induction surface 23 Round surface 24 Double nail crystal 25 Base insulating surface 26 Lateral insulating surface 27 Circular insulating surface 28 Incision α Parallelism error between force introducing surface and force guiding surface μ Eccentricity between crystal axis and sensor axis Error Wd Wafer thickness D Guide diameter

Claims (8)

２つの力伝達表面（２１、２２）の間に機械的予荷重を受けて置かれて、端部表面（１６、１７）において信号が取り出される圧電センサ用結晶素子であって、主として信号発生用の少なくとも１つのロッド部分（１１）と、主として保持および心出し用の少なくとも１つのベース（１２）とを有する形態を特徴とする圧電センサ用結晶素子。 A crystal element for a piezoelectric sensor , which is placed between two force transmission surfaces (21, 22) under a mechanical preload and from which signals are taken out at end surfaces (16, 17) , mainly for signal generation A crystal element for a piezoelectric sensor, characterized in that it has at least one rod part (11) and at least one base (12) mainly for holding and centering. 請求項１に記載の圧電センサ用結晶素子において、前記ベースは研削されて心出し表面（１３）を備え、これら心出し表面（１３）が、前記力伝達表面（２１）に設けた心出しリング（２０）に嵌合する、圧電センサ用結晶素子。 2. The crystal element for a piezoelectric sensor according to claim 1, wherein the base is ground to have a centering surface (13), and the centering surface (13) is provided on the force transmitting surface (21). A crystal element for a piezoelectric sensor , which is fitted in (20) . 請求項１または２に記載の圧電センサ用結晶素子において、前記ベース（１２）から前記ロッド部分（１１）への遷移部分が連続的な輪郭に形成され、該ロッド部分の端部表面（１６）と前記ベースの端部表面（１７）が、許容誤差（α）のある平行度で形成される、圧電センサ用結晶素子。 The crystal element for a piezoelectric sensor according to claim 1 or 2, wherein a transition portion from the base (12) to the rod portion (11) is formed in a continuous contour, and an end surface (16) of the rod portion. And a crystal element for a piezoelectric sensor , wherein the end surface (17) of the base is formed with a parallelism having a tolerance (α) . 請求項２に記載の圧電センサ用結晶素子において、前記心出し表面（１３）は、専用チャック内における円形研削によって、自動的に絶縁性となる、圧電センサ用結晶素子。 3. The piezoelectric sensor crystal element according to claim 2, wherein the centering surface (13) automatically becomes insulative by circular grinding in a dedicated chuck . 請求項１から４のいずれか一項に記載の圧電センサ用結晶素子において、前記ベースが円形形態（Ｄ）であり、導電性表面と絶縁性表面の組合せからなる、圧電センサ用結晶素子。 5. The crystal element for a piezoelectric sensor according to claim 1, wherein the base has a circular form (D) and is formed of a combination of a conductive surface and an insulating surface . 請求項２に記載の圧電センサ用結晶素子において、前記ロッド部分（１１）が二重構成であり、前記ベースが単一構成であって、前記心出し表面（１３）および絶縁性表面（２５、２６、２７）を有する、圧電センサ用結晶素子。 The crystal element for a piezoelectric sensor according to claim 2, wherein the rod portion (11) has a double structure, the base has a single structure, the centering surface (13) and the insulating surface (25, 26, 27), a crystal element for a piezoelectric sensor. 請求項１から６のいずれか一項に記載の圧電センサ用結晶素子において、ウェハからのバッチ生産または円形素子からの単品生産のいずれかの生産が可能である、圧電センサ用結晶素子。 The crystal element for a piezoelectric sensor according to any one of claims 1 to 6, wherein the crystal element for a piezoelectric sensor is capable of either batch production from a wafer or single item production from a circular element. 請求項１から７のいずれか一項に記載の結晶素子を生産する方法であって、適切に切断されたウェハからのバッチ生産であり、加工済みウェハ全体が、いくつかの操作のうちの１つにおいて金属化され、ウェハを個々の結晶に切断したときに横方向絶縁性表面（１８、１９）が自動的に得られることを特徴とする方法。A method for producing a crystal element according to any one of claims 1 to 7, wherein the production is batch production from appropriately cut wafers, wherein the entire processed wafer is one of several operations. Method characterized in that laterally insulating surfaces (18, 19) are automatically obtained when metallized in one and the wafer is cut into individual crystals.
JP2002226270A 2001-08-02 2002-08-02 Crystal element for piezoelectric sensor Expired - Fee Related JP4143355B2 (en)

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