JP4098274B2 - Wire bonding equipment - Google Patents

Wire bonding equipment Download PDF

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JP4098274B2
JP4098274B2 JP2004147361A JP2004147361A JP4098274B2 JP 4098274 B2 JP4098274 B2 JP 4098274B2 JP 2004147361 A JP2004147361 A JP 2004147361A JP 2004147361 A JP2004147361 A JP 2004147361A JP 4098274 B2 JP4098274 B2 JP 4098274B2
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wire
detection
bonding
waveform
bump
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JP2005332850A (en
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志信 石井
正幹 齊藤
宏明 鈴木
善一 田代
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Kaijo Corp
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Kaijo Corp
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Description

本発明は、ワイヤボンディング装置に係わり、特に、ＡＣ／ＤＣ特性の混在しているデバイスに対しても不着検出が可能なワイヤボンディング装置に関する。   The present invention relates to a wire bonding apparatus, and more particularly, to a wire bonding apparatus that can detect non-sticking even for a device having a mixture of AC / DC characteristics.

ワイヤボンディング装置は、金線、アルミニウムなどからなるワイヤを用いて第１ボンディング点となる半導体チップ上の電極と、第２ボンディング点となるリードとを接続するものである。   The wire bonding apparatus connects an electrode on a semiconductor chip serving as a first bonding point and a lead serving as a second bonding point using a wire made of gold wire, aluminum, or the like.

二次元方向に移動可能なＸＹテーブル上に搭載されたボンディングヘッドのリニアモータ若しくはモータ軸に連結したカムなどによりボンディングアームが上下に揺動され、このボンディングアームの超音波ホーンの先端に取り付けられたキャピラリからワイヤが送り出され、このワイヤの先端と放電電極との間に高電圧を印加することにより放電を起こさせる。その放電エネルギーによってワイヤの先端を溶融させてワイヤの先端にボールを形成する。そしてキャピラリの先端に保持されたボールを第１ボンディング点である半導体チップの電極にボンディングアームの揺動による機械的な加圧力により押し付けつつ、超音波及び加熱手段を併用して熱圧着を行い、第１ボンディング点に対してワイヤを接続する。   The bonding arm was swung up and down by a linear motor of a bonding head mounted on an XY table movable in two dimensions or a cam connected to a motor shaft, and attached to the tip of the ultrasonic horn of this bonding arm. A wire is sent out from the capillary, and discharge is caused by applying a high voltage between the tip of the wire and the discharge electrode. The tip of the wire is melted by the discharge energy to form a ball at the tip of the wire. Then, while pressing the ball held at the tip of the capillary against the electrode of the semiconductor chip that is the first bonding point by mechanical pressure by swinging the bonding arm, thermocompression bonding is performed using both ultrasonic and heating means, A wire is connected to the first bonding point.

図９（ａ）乃至（ｄ）は、上記ワイヤボンディング装置によるワイヤボンディングを行う工程を説明する図である。
図９（ａ）及び（ｂ）に示すように、キャピラリ２の先端に送り出されたワイヤ１の先端と放電電極４との間で放電を一定の時間起こさせ、ワイヤ１の先端を溶融してボール２０を形成し、キャピラリ２の先端で保持してキャピラリ２を第１ボンディング点１５なる半導体チップ１３の電極１２の直上に位置させる。 FIGS. 9A to 9D are diagrams for explaining a process of performing wire bonding by the wire bonding apparatus.
As shown in FIGS. 9A and 9B, a discharge is caused between the tip of the wire 1 fed to the tip of the capillary 2 and the discharge electrode 4 for a certain period of time, and the tip of the wire 1 is melted. A ball 20 is formed and held at the tip of the capillary 2, and the capillary 2 is positioned immediately above the electrode 12 of the semiconductor chip 13, which is the first bonding point 15.

次に、図９（ｃ）に示すように、キャピラリ２を下降させてボール２０を電極１２に押し付けて加圧すると同時にキャピラリ２の先端に対して前記ボンディングアームの超音波ホーンを介して超音波振動を印加する。これにより、電極にワイヤ１を接続する。
次いで、図９（ｄ）に示すようにキャピラリ２を所定のループコントロールに従って上昇させ、第２ボンディング点１６となるリード１４方向に移動させる。 Next, as shown in FIG. 9C, the capillary 2 is lowered and the ball 20 is pressed against the electrode 12 to pressurize it. At the same time, ultrasonic waves are applied to the tip of the capillary 2 via the ultrasonic horn of the bonding arm. Apply vibration. Thereby, the wire 1 is connected to the electrode.
Next, as shown in FIG. 9 (d), the capillary 2 is raised according to a predetermined loop control and moved in the direction of the lead 14 that becomes the second bonding point 16.

次に、キャピラリ２を下降させワイヤ１をリード１４に押し付けて加圧すると同時にキャピラリ２の先端に対して超音波ホーンを介して超音波振動を印加してリード１４に対しワイヤ１を接続する。この後、キャピラリ２を上昇させてあらかじめ設定されたキャピラリ２の上昇位置でワイヤカットクランプ３を閉じ、リード１４上のワイヤをカットして一回のボンディング作業が完了する。   Next, the capillary 2 is lowered to press and pressurize the wire 1 against the lead 14, and at the same time, ultrasonic vibration is applied to the tip of the capillary 2 through an ultrasonic horn to connect the wire 1 to the lead 14. Thereafter, the capillary 2 is raised and the wire cut clamp 3 is closed at a preset position where the capillary 2 is raised, and the wire on the lead 14 is cut to complete one bonding operation.

従来のワイヤボンディング装置は、半導体チップ１３の電極１２にボール２０を押しつぶしてボンディングが行われた状態で、ボンディングが確実に成されたか否か、すなわちワイヤが不着状態であるか否かを不着検出装置によって判断している。この不着検出装置は、次のような手順で不着検出が行われる。   The conventional wire bonding apparatus detects whether or not bonding has been performed reliably, that is, whether or not the wire is in a non-attached state, in a state where the ball 20 is crushed to the electrode 12 of the semiconductor chip 13 and the bonding is performed. It is determined by the device. This non-stick detection device detects non-stick in the following procedure.

図１０は、従来の不着検出方法を示すフローチャートである。
ボンディング前に検出区間・開始位置、検出しきい値を一括で設定する（ＳＴ１，ＳＴ２）。なお、検出区間、開始位置、検出しきい値をワイヤ毎に設定することはできない。 FIG. 10 is a flowchart showing a conventional non-stick detection method.
Before the bonding, the detection section / start position and detection threshold are set in a batch (ST1, ST2). Note that the detection section, start position, and detection threshold cannot be set for each wire.

次いで、半導体チップの電極とリードとをワイヤによって接続するワイヤボンディングを行う（ＳＴ３）。そして、ワイヤが半導体チップの電極に確実にボンディングされたか否かの不着検出を行う（ＳＴ４）。このとき、ワイヤが不着であると判断した場合、ワイヤボンディング装置を停止するなどのエラー処理が行われる。また、ワイヤが確実にボンディングされたと判断した場合、次のワイヤボンディングを行い、同様に不着検出を行う（ＳＴ３，ＳＴ４）。すべてのワイヤボンディングが行われたらワイヤボンディング作業を終了する（ＳＴ５）。   Next, wire bonding for connecting the electrodes of the semiconductor chip and the leads with wires is performed (ST3). Then, non-sticking detection is performed as to whether or not the wire is securely bonded to the electrode of the semiconductor chip (ST4). At this time, if it is determined that the wire is not attached, error processing such as stopping the wire bonding apparatus is performed. If it is determined that the wire has been securely bonded, the next wire bonding is performed and non-stick detection is similarly performed (ST3, ST4). When all wire bonding is performed, the wire bonding operation is finished (ST5).

次に、上記不着検出方法を実施する不着検出装置について説明する。
図１１は、従来のワイヤボンディング装置のＤＣ専用不着検出装置を示すブロック図である。ＤＣ専用不着検出装置は、ＤＣ特性を有する半導体チップ専用の不着検出を行うものである。
ＤＣ専用不着検出装置は、ＤＣ用不着検出基板４４及びボンディングＣＰＵ基板１８を有している。ボンディングＣＰＵ基板１８はＩ／Ｏポート３２を備えている。ＤＣ用不着検出基板４４は、Ｉ／Ｏポート３３、ＣＰＵ３０、Ａ／Ｄコンバータ３５、増幅器（ＡＭＰ）３７、直流発生器４５及び抵抗４６を備えている。 Next, a non-stick detection device that implements the non-stick detection method will be described.
FIG. 11 is a block diagram showing a DC-only non-stick detection device of a conventional wire bonding apparatus. The DC non-stick detection device performs non-stick detection dedicated to a semiconductor chip having DC characteristics.
The DC non-stick detection device has a DC non-stick detection substrate 44 and a bonding CPU substrate 18. The bonding CPU board 18 includes an I / O port 32. The DC non-adherence detection board 44 includes an I / O port 33, a CPU 30, an A / D converter 35, an amplifier (AMP) 37, a DC generator 45, and a resistor 46.

出力部３８は、図９に示すワイヤボンディング装置のワイヤ１に接続されている。また、接地電位（ＧＮＤ）３９は、半導体チップ１３が載置されたボンディングステージに出力部３８を介して接続されている。   The output unit 38 is connected to the wire 1 of the wire bonding apparatus shown in FIG. The ground potential (GND) 39 is connected to the bonding stage on which the semiconductor chip 13 is placed via the output unit 38.

ＤＣ専用不着検出装置を用いて不着検出を行う場合、ワイヤボンディング時に直流発生器４５から抵抗４６、出力部３８、ワイヤ１を介して半導体チップ１３の電極１２に電圧が印加される。そして、半導体チップ１３の電極１２からワイヤ１を介して検出信号が増幅器３７に入力され、増幅器３７から出力された出力信号がＡ／Ｄコンバータ３５によってＡＤ変換されＣＰＵ３０に入力される。このＣＰＵ３０において、検出された信号がしきい値内であれば正常にボンディングされたと判断され、検出信号がしきい値から外れていれば異常ボンディング（即ち不着）であると判断される。そして、正常ボンディングであるか不着であるかの信号がＩ／Ｏポート３３，３２を介してボンディングＣＰＵ基板３２に入力され、不着検出が行われる。   When non-stick detection is performed using a DC non-stick detector, a voltage is applied from the DC generator 45 to the electrode 12 of the semiconductor chip 13 via the resistor 46, the output unit 38, and the wire 1 during wire bonding. A detection signal is input from the electrode 12 of the semiconductor chip 13 to the amplifier 37 via the wire 1, and an output signal output from the amplifier 37 is AD converted by the A / D converter 35 and input to the CPU 30. In this CPU 30, if the detected signal is within the threshold value, it is determined that the bonding is normally performed, and if the detected signal is outside the threshold value, it is determined that the bonding is abnormal (that is, non-bonding). A signal indicating whether the bonding is normal or non-bonding is input to the bonding CPU board 32 via the I / O ports 33 and 32, and non-bonding detection is performed.

図１２は、従来のワイヤボンディング装置のＡＣ専用不着検出装置の具体的な構成を示す回路図である（特許文献１参照）。ＡＣ専用不着検出装置は、ＡＣ特性を有する半導体チップ専用の不着検出を行うものである。
ワイヤスプール２１より繰り出されたワイヤ１は、ワイヤ１の保持、解放が可能なワイヤカットクランプ３の保持面の間を通り、ワイヤカットクランプ３の直下に位置するキャピラリ２を挿通している。ワイヤスプール２１のワイヤの端であるスプールワイヤ端２２と、フレームとしてのリードフレーム１１を載置する基準電位点であるボンディングステージ１７との間には交流ブリッジ回路５が接続されている。 FIG. 12 is a circuit diagram showing a specific configuration of a conventional AC non-stick detection device of a wire bonding apparatus (see Patent Document 1). The AC non-stick detection device performs non-stick detection dedicated to a semiconductor chip having AC characteristics.
The wire 1 fed out from the wire spool 21 passes between the holding surfaces of the wire cut clamp 3 that can hold and release the wire 1 and is inserted through the capillary 2 positioned immediately below the wire cut clamp 3. An AC bridge circuit 5 is connected between a spool wire end 22 which is an end of a wire of the wire spool 21 and a bonding stage 17 which is a reference potential point on which the lead frame 11 as a frame is placed.

この交流ブリッジ回路５は交流発生器５ａを備え、前記交流発生器５ａは所定の周波数で発振する正弦波発振回路を内蔵している。交流ブリッジ回路５は、交流発生器５ａと、交流発生器５ａからの出力信号を受ける可変抵抗器Ｒ１とコンデンサＣ１からなる第１直列回路５ｃ１、交流発生器５からの交流信号を受ける固定抵抗Ｒ２と、スプールワイヤ端２２から基準電位点であるボンディングステージ１７に至る電気経路を含む第２直列回路５ｃ２とで閉ループを形成している。   The AC bridge circuit 5 includes an AC generator 5a, and the AC generator 5a includes a sine wave oscillation circuit that oscillates at a predetermined frequency. The AC bridge circuit 5 includes an AC generator 5a, a first series circuit 5c1 composed of a variable resistor R1 that receives an output signal from the AC generator 5a and a capacitor C1, and a fixed resistor R2 that receives an AC signal from the AC generator 5. And a second series circuit 5c2 including an electrical path from the spool wire end 22 to the bonding stage 17 which is a reference potential point, forms a closed loop.

また、前記可変抵抗Ｒ１と、コンデンサＣ１との間の第１接続点Ｘは、差動増幅器６の一方の入力端に接続され、前記固定抵抗Ｒ２と前記スプールワイヤ端２２との間の第２接続点Ｙが、前記差動増幅器６の他方の入力端に接続されている。
前記固定抵抗Ｒ２とスプールワイヤ端２２との間には、同軸ケーブル５ｂが外来ノイズの影響を避けるために接続されている。従って、同軸ケーブル５ｂの芯線と外被との間で発生する同軸ケーブル５ｂの静電容量Ｃ２が生じ、静電容量Ｃ２が等価的に固定抵抗Ｒ２とボンディングステージ１７との間に接続されることになる。 A first connection point X between the variable resistor R1 and the capacitor C1 is connected to one input end of the differential amplifier 6, and a second connection point between the fixed resistor R2 and the spool wire end 22 is connected. A connection point Y is connected to the other input terminal of the differential amplifier 6.
A coaxial cable 5b is connected between the fixed resistor R2 and the spool wire end 22 in order to avoid the influence of external noise. Accordingly, a capacitance C2 of the coaxial cable 5b generated between the core wire of the coaxial cable 5b and the jacket is generated, and the capacitance C2 is equivalently connected between the fixed resistor R2 and the bonding stage 17. become.

差動増幅器６は、演算増幅器Ａ１、演算増幅器Ａ２、抵抗Ｒ３、抵抗Ｒ４、抵抗Ｒ５より構成される。この差動増幅器６は、前記第１接続点Ｘ、第２接続点Ｙから両入力端に供給される信号入力の差成分を検出して出力するものであり、前記差動増幅器６の出力端には、コンデンサＣ及びトランス７の一次側入力端子が直列に接続されている。   The differential amplifier 6 includes an operational amplifier A1, an operational amplifier A2, a resistor R3, a resistor R4, and a resistor R5. The differential amplifier 6 detects and outputs a difference component between signal inputs supplied from the first connection point X and the second connection point Y to both input terminals. The output terminal of the differential amplifier 6 The capacitor C and the primary side input terminal of the transformer 7 are connected in series.

トランス７の二次側出力端子は、絶対値変換器８に接続されており、絶対値変換器８は、トランス７より出力さる正極性及び負極性の交流電圧を正極性の絶対値電圧に変換するものである。そして絶対値変換器８の出力端には第１レベル弁別器９が接続され、第１レベル弁別器９の出力はボンディング判定器２６に入力され不着状態を検出するようにしている。   The secondary output terminal of the transformer 7 is connected to an absolute value converter 8, and the absolute value converter 8 converts positive and negative AC voltages output from the transformer 7 into positive absolute voltage. To do. The first level discriminator 9 is connected to the output terminal of the absolute value converter 8, and the output of the first level discriminator 9 is input to the bonding determiner 26 so as to detect the non-attached state.

また、交流ブリッジ回路５の第２接続点Ｙに接続された差動増幅器６の演算増幅器Ａ１の出力端子には、ローパスフィルタ２３が接続されている。ローパスフィルタ２３の出力は、第２レベル弁別器２４に入力される。第２レベル弁別器２４は、ローパスフィルタ２３の出力信号を前もって設定された基準の信号レベルと比較し、ローパスフィルタ２３の出力信号が基準の信号レベル以上であれば論理値“０”の信号を論理積器２５に出力し、ローパスフィルタ２３の出力信号が基準の信号レベル以下であれば論理値“１”の信号を論理積器２５に出力する。   A low-pass filter 23 is connected to the output terminal of the operational amplifier A1 of the differential amplifier 6 connected to the second connection point Y of the AC bridge circuit 5. The output of the low pass filter 23 is input to the second level discriminator 24. The second level discriminator 24 compares the output signal of the low-pass filter 23 with a reference signal level set in advance. If the output signal of the low-pass filter 23 is equal to or higher than the reference signal level, a signal having a logical value “0” is output. If the output signal from the low-pass filter 23 is equal to or lower than the reference signal level, a signal having a logical value “1” is output to the logical multiplier 25.

ボンディング検出切替器２７は第１ボンディング（チップボンディング）時に論理値“１”の信号を出力し、第２ボンディング（リードボンディング）時に論理値“０”の信号を論理積器２５に出力する。論理積器２５は、ボンディング検出切替器２７の出力信号と第２レベル弁別器２４の出力との論理積（ＡＮＤ演算）を行い、第１ボンディング（チップボンディング）時には、論理値“１”又は“０”をボンディング判定器２６に出力し、第２ボンディング（リードボンディング）時には、常に論理値“０”をボンディング判定器２６に出力する。   The bonding detection switching unit 27 outputs a signal having a logical value “1” during the first bonding (chip bonding), and outputs a signal having a logical value “0” to the logical product 25 during the second bonding (lead bonding). The logical product unit 25 performs a logical product (AND operation) of the output signal of the bonding detection switching unit 27 and the output of the second level discriminator 24. At the first bonding (chip bonding), the logical value “1” or “ 0 ”is output to the bonding determination unit 26, and the logical value“ 0 ”is always output to the bonding determination unit 26 during the second bonding (lead bonding).

ボンディング判定器２６は、第１ボンディング点としての半導体チップ１３上の電極１２又は第２ボンディング点としてのリードフレーム１１のリード１４にボンディング接続したとき、不着検出タイミング、すなわちボンディング装置からの指令により不着検出モードでの検出を行う状態で論理積器２５からの出力信号を読みとり、不着検出を行う設定となっている。   When the bonding determination unit 26 is bonded to the electrode 12 on the semiconductor chip 13 as the first bonding point or the lead 14 of the lead frame 11 as the second bonding point, the bonding determination unit 26 is not attached according to the non-stick detection timing, that is, a command from the bonding apparatus. The output signal from the AND circuit 25 is read in a state where detection in the detection mode is performed, and non-delivery detection is performed.

特開２０００−２６０８０８号公報（４〜５頁、図１）JP 2000-260808 A (pages 4-5, FIG. 1)

ところで、上記従来のワイヤボンディング装置において不着検出を行う場合、ＤＣ特性を有する半導体チップにはＤＣ専用不着検出装置を用い、ＡＣ特性を有する半導体チップにはＡＣ専用不着検出装置を用いるため、ＡＣ／ＤＣ特性の混在しているデバイスの不着検出が出来なかった。また、上記従来のワイヤボンディング装置では、検出区間・開始位置、検出しきい値、ＡＣの場合の発振周波数などのパラメータ設定項目をワイヤ毎に設定することができないため、対応可能なデバイスに制限があった。   By the way, when non-stick detection is performed in the conventional wire bonding apparatus, a DC-specific non-stick detector is used for a semiconductor chip having DC characteristics, and an AC-specific non-stick detector is used for a semiconductor chip having AC characteristics. It was not possible to detect non-delivery of devices with mixed DC characteristics. Further, in the above conventional wire bonding apparatus, parameter setting items such as the detection section / start position, detection threshold value, oscillation frequency in the case of AC cannot be set for each wire, and thus there is a limit to devices that can be handled. there were.

本発明は上記のような事情を考慮してなされたものであり、その目的は、ＡＣ／ＤＣ特性の混在しているデバイスに対しても不着検出が可能なワイヤボンディング装置を提供することにある。また、本発明の他の目的は、不着検出時のパラメータ設定項目をワイヤ毎に設定できるワイヤボンディング装置を提供することにある。   The present invention has been made in consideration of the above-described circumstances, and an object of the present invention is to provide a wire bonding apparatus capable of detecting non-sticking even to a device having a mixture of AC / DC characteristics. . Another object of the present invention is to provide a wire bonding apparatus capable of setting parameter setting items for each wire at the time of non-stick detection.

上記課題を解決するため、本発明に係るワイヤボンディング装置は、半導体チップの電極とリードフレームのリードをワイヤによって接続するワイヤボンディング装置又は半導体チップのパッドにバンプをボンディングするワイヤボンディング装置において、
ワイヤ又はバンプにＡＣ方式の出力波形を印加するＡＣ印加手段と、
ワイヤ又はバンプにＤＣ方式の出力波形を印加するＤＣ印加手段と、
前記ＡＣ方式の出力波形をワイヤ又はバンプに印加するか、前記ＤＣ方式の出力波形をワイヤ又はバンプに印加するかを切り換える切換手段と、
前記ワイヤ又はバンプからＡＣ方式又はＤＣ方式の応答波形を検出する検出手段と、
前記応答波形を検出しきい値と比較し、前記検出しきい値の範囲内であればワイヤ又はバンプが確実にボンディング接続されたと判定し、前記検出しきい値の範囲外であればワイヤ又はバンプが不着であると判定する判定手段と、
を具備することを特徴とする。 In order to solve the above problems, a wire bonding apparatus according to the present invention is a wire bonding apparatus that connects electrodes of a semiconductor chip and leads of a lead frame by wires, or a wire bonding apparatus that bonds bumps to pads of a semiconductor chip.
AC applying means for applying an AC output waveform to the wire or bump;
DC application means for applying a DC output waveform to the wire or bump;
Switching means for switching between applying the AC output waveform to the wire or bump or applying the DC output waveform to the wire or bump;
Detection means for detecting an AC or DC response waveform from the wire or bump;
The response waveform is compared with a detection threshold, and if it is within the range of the detection threshold, it is determined that the wire or bump is securely bonded, and if it is outside the range of the detection threshold, the wire or bump is determined. Determining means for determining that is non-delivery,
It is characterized by comprising.

上記ワイヤボンディング装置によれば、切換手段によってＡＣ方式の出力波形をワイヤ又はバンプに印加するか、ＤＣ方式の出力波形をワイヤ又はバンプに印加するかを切り換えることにより、ワイヤ毎にＡＣ方式又はＤＣ方式の応答波形を検出することができる。従って、ＡＣ／ＤＣ特性の混在しているデバイスに対しても不着検出が可能となる。   According to the above-described wire bonding apparatus, the switching unit switches between applying an AC output waveform to the wire or the bump, or applying a DC output waveform to the wire or the bump, so that the AC method or the DC is applied to each wire. The response waveform of the system can be detected. Therefore, non-stick detection can be performed even for a device having a mixture of AC / DC characteristics.

また、本発明に係るワイヤボンディング装置においては、前記ＡＣ印加手段又は前記ＤＣ印加手段によりＡＣ方式又はＤＣ方式の出力波形を印加する際のパラメータ設定項目を、前記ワイヤ毎又は前記バンプ毎にソフトウエア制御により設定することも可能である。   In the wire bonding apparatus according to the present invention, the parameter setting items for applying an AC or DC output waveform by the AC applying means or the DC applying means are set for each wire or bump. It is also possible to set by control.

また、本発明に係るワイヤボンディング装置においては、前記ＡＣ印加手段はＣＰＵ、Ｄ／Ａコンバータ及びＡＣ用抵抗を有し、前記ＤＣ印加手段はＣＰＵ、Ｄ／Ａコンバータ及びＤＣ用抵抗を有し、前記切換手段がＡＣ／ＤＣ切換スイッチであり、前記検出手段は増幅器、Ａ／Ｄコンバータ及びＣＰＵを有し、前記判定手段はＣＰＵを有していることも可能である。   Further, in the wire bonding apparatus according to the present invention, the AC applying unit has a CPU, a D / A converter, and an AC resistor, and the DC applying unit has a CPU, a D / A converter, and a DC resistor, The switching means may be an AC / DC changeover switch, the detection means may include an amplifier, an A / D converter and a CPU, and the determination means may include a CPU.

また、本発明に係るワイヤボンディング装置においては、前記ＡＣ印加手段又は前記ＤＣ印加手段によりＡＣ方式又はＤＣ方式の出力波形をワイヤ毎又はバンプ毎に前記切換手段により切り換えながら印加し、前記検出手段によりＡＣ方式又はＤＣ方式の応答波形を検出し、前記判定手段によりボンディング接続されたか不着であるかを判定することをソフトウエア制御により行うことも可能である。   In the wire bonding apparatus according to the present invention, the AC application means or the DC application means applies an AC or DC output waveform while switching the switching means for each wire or bump, and the detection means It is also possible to perform software control to detect an AC or DC response waveform and determine whether the bonding means is bonded or not by the determination means.

また、本発明に係るワイヤボンディング装置においては、前記ＡＣ印加手段によりＡＣ方式の出力波形を不着状態のワイヤ又はバンプに印加し、前記検出手段により不着状態のＡＣ方式の応答波形を検出し、前記切換手段により切り換えて前記ＤＣ印加手段によりＤＣ方式の出力波形を不着状態のワイヤ又はバンプに印加し、前記検出手段により不着状態のＤＣ方式の応答波形を検出し、前記ＡＣ印加手段によりＡＣ方式の出力波形をボンディング接続した状態のワイヤ又はバンプに印加し、前記検出手段によりボンディング接続状態のＡＣ方式の応答波形を検出し、前記切換手段により切り換えて前記ＤＣ印加手段によりＤＣ方式の出力波形をボンディング接続状態のワイヤ又はバンプに印加し、前記検出手段によりボンディング接続状態のＤＣ方式の応答波形を検出し、前記不着状態のＡＣ方式の応答波形と前記ボンディング状態のＡＣ方式の応答波形の差を演算すると共に、前記不着状態のＤＣ方式の応答波形と前記ボンディング状態のＤＣ方式の応答波形の差を演算し、両者のうち差の大きい方を検出モードとして設定し、前記検出モードとして設定されたＡＣ方式又はＤＣ方式の検出しきい値を前記ボンディング状態のＡＣ方式の応答波形又は前記ボンディング状態のＤＣ方式の応答波形から設定することをソフトウエア制御により自動で行うことも可能である。   In the wire bonding apparatus according to the present invention, the AC applying waveform is applied to the non-attached wire or bump by the AC applying means, and the non-attached AC method response waveform is detected by the detecting means, The switching means switches the DC output waveform to the non-attached wire or bump by the DC applying means, the non-attached DC response waveform is detected by the detecting means, and the AC applying means detects the AC-type response waveform. The output waveform is applied to the wire or bump in the bonding connection state, the response waveform of the AC connection state in the bonding connection state is detected by the detection means, the switching is performed by the switching means, and the DC output waveform is bonded by the DC application means. Applied to the wire or bump in the connected state, and bonded by the detection means A DC response waveform is detected, a difference between the non-attached AC response waveform and the bonding AC response waveform is calculated, and the non-attached DC response waveform and the bonding DC are calculated. The difference between the response waveforms of the method is calculated, the larger of the two is set as the detection mode, and the AC method or DC method detection threshold set as the detection mode is the response of the AC method in the bonding state. Setting from the waveform or the response waveform of the DC system in the bonding state can be automatically performed by software control.

以上説明したように本発明によれば、ＡＣ／ＤＣ特性の混在しているデバイスに対しても不着検出が可能なワイヤボンディング装置を提供することができる。また、他の本発明によれば、不着検出時のパラメータ設定項目をワイヤ毎に設定できるワイヤボンディング装置を提供することができる。   As described above, according to the present invention, it is possible to provide a wire bonding apparatus capable of detecting non-bonding even for a device having a mixture of AC / DC characteristics. In addition, according to another aspect of the present invention, it is possible to provide a wire bonding apparatus that can set parameter setting items for each wire at the time of non-stick detection.

発明を実施するための形態BEST MODE FOR CARRYING OUT THE INVENTION

以下、図面を参照して本発明の実施の形態について説明する。
（実施の形態１）
図１は、本発明の実施の形態１による不着検出装置を備えたワイヤボンディング装置を模式的に示すブロック図である。図２は、図１に示す不着検出基板とワイヤボンディング装置との配線による接続関係を概略的に示す図である。なお、従来のワイヤボンディング装置と同一の構造及び機能を有する部分については要部のみを説明し、詳細な説明は省略する。
本実施の形態による不着検出装置は、検出区間・開始位置、ＡＣ／ＤＣ方式、出力電圧、検出ｏｎ／ｏｆｆ、ＡＣの場合の発振周波数、検出しきい値などのパラメータ設定項目について、ワイヤ毎に設定できるものである。従って、ＡＣ／ＤＣ特性の混在しているデバイスに対しても不着検出が可能となる。 Embodiments of the present invention will be described below with reference to the drawings.
(Embodiment 1)
FIG. 1 is a block diagram schematically showing a wire bonding apparatus provided with a non-stick detection device according to Embodiment 1 of the present invention. FIG. 2 is a diagram schematically showing a connection relationship between the non-stick detection substrate and the wire bonding apparatus shown in FIG. 1 by wiring. In addition, about the part which has the same structure and function as the conventional wire bonding apparatus, only a principal part is demonstrated and detailed description is abbreviate | omitted.
The non-stick detection device according to the present embodiment is configured for each wire with respect to parameter setting items such as detection section / start position, AC / DC system, output voltage, detection on / off, oscillation frequency in the case of AC, and detection threshold. It can be set. Therefore, non-stick detection can be performed even for a device having a mixture of AC / DC characteristics.

図１に示すように、不着検出装置は、ＡＣ／ＤＣ不着検出基板１０、ボンディングＣＰＵ基板１８及びメインＣＰＵ基板１９を有している。メインＣＰＵ基板１９はＣＰＵ２８を備えており、このＣＰＵ２８はキーボード３１に接続されている。検出区間・開始位置、ＡＣ／ＤＣ方式、出力電圧、検出ｏｎ／ｏｆｆ、ＡＣの場合の発振周波数、検出しきい値などのワイヤ毎のパラメータをキーボード３１によって入力することができる。   As shown in FIG. 1, the non-stick detection device includes an AC / DC non-stick detection board 10, a bonding CPU board 18, and a main CPU board 19. The main CPU board 19 includes a CPU 28, which is connected to a keyboard 31. Parameters for each wire such as detection section / start position, AC / DC system, output voltage, detection on / off, oscillation frequency in the case of AC, detection threshold value, and the like can be input by the keyboard 31.

ボンディングＣＰＵ基板１８はＩ／Ｏポート３２及びＣＰＵ２９を備えており、ＣＰＵ２９はＣＰＵ２８に接続されている。
ＡＣ／ＤＣ用不着検出基板１０は、Ｉ／Ｏポート３３、ＣＰＵ３０、Ａ／Ｄコンバータ３５、増幅器（ＡＭＰ）３７、メモリ３４、Ｄ／Ａコンバータ３６、ＡＣ／ＤＣ切換スイッチ４９、ＡＣ用抵抗４０及びＤＣ用抵抗４１を備えている。 The bonding CPU board 18 includes an I / O port 32 and a CPU 29, and the CPU 29 is connected to the CPU 28.
The AC / DC non-stick detection board 10 includes an I / O port 33, a CPU 30, an A / D converter 35, an amplifier (AMP) 37, a memory 34, a D / A converter 36, an AC / DC changeover switch 49, and an AC resistor 40. And a DC resistor 41.

Ｉ／Ｏポート３３の入力側はＣＰＵ３０に接続されており、Ｉ／Ｏポート３３の出力側はＩ／Ｏポート３２に接続されている。また、ＣＰＵ３０はＡ／Ｄコンバータ３５に接続されており、Ａ／Ｄコンバータ３５は増幅器（ＡＭＰ）３７に接続されている。ＣＰＵ３０はＤ／Ａコンバータ３６に接続されており、Ｄ／Ａコンバータ３６はＡＣ／ＤＣ切換スイッチ４９に接続されている。ＣＰＵ３０はＡＣ／ＤＣ切換スイッチ４９に接続されており、ＣＰＵ３０から送られるコントロール信号によってＡＣ／ＤＣ切換スイッチ４９をコントロールするようになっている。また、ＣＰＵ３０はメモリ３４に接続されている。   The input side of the I / O port 33 is connected to the CPU 30, and the output side of the I / O port 33 is connected to the I / O port 32. The CPU 30 is connected to an A / D converter 35, and the A / D converter 35 is connected to an amplifier (AMP) 37. The CPU 30 is connected to a D / A converter 36, and the D / A converter 36 is connected to an AC / DC changeover switch 49. The CPU 30 is connected to an AC / DC changeover switch 49 and controls the AC / DC changeover switch 49 by a control signal sent from the CPU 30. The CPU 30 is connected to the memory 34.

ＡＣ／ＤＣ切換スイッチ４９はＡＣ用抵抗４０及びＤＣ用抵抗４１それぞれに接続できるようになっており、ＡＣ／ＤＣ切換スイッチ４９によってＤ／Ａコンバータ３６をＡＣ用抵抗４０に接続するか、ＤＣ用抵抗に接続するかを制御することができる。   The AC / DC changeover switch 49 can be connected to each of the AC resistor 40 and the DC resistor 41. The AC / DC changeover switch 49 connects the D / A converter 36 to the AC resistor 40 or the DC resistor. It is possible to control whether to connect to a resistor.

出力部３８は、図２に示すワイヤ（金線）１に接続されている。また、接地電位（ＧＮＤ）３９は、半導体チップ１３が載置されたボンディングステージに出力部を介して接続されている。   The output unit 38 is connected to a wire (gold wire) 1 shown in FIG. The ground potential (GND) 39 is connected to the bonding stage on which the semiconductor chip 13 is placed via the output unit.

図３は、図１に示す不着検出装置によって不着検出を行う流れを示すフローチャートである。以下、上記不着検出装置によって不着検出を行う方法について図１乃至図３を参照しつつ説明する。
まず、半導体チップとリードとを接続するボンディングを行う前に、半導体チップ１３におけるワイヤ毎について、検出区間・開始位置、ＡＣ／ＤＣ方式、出力電圧、検出ｏｎ／ｏｆｆ、ＡＣの場合の発振周波数、検出しきい値などのパラメータ設定項目をキーボード３１から入力する。これにより、メインＣＰＵ基板１９のＣＰＵ２８にパラメータ設定項目が入力される。 FIG. 3 is a flowchart showing the flow of non-stick detection by the non-stick detection device shown in FIG. Hereinafter, a method for performing non-stick detection by the non-stick detection device will be described with reference to FIGS. 1 to 3.
First, before performing bonding for connecting the semiconductor chip and the lead, for each wire in the semiconductor chip 13, the detection interval / start position, AC / DC system, output voltage, detection on / off, oscillation frequency in the case of AC, A parameter setting item such as a detection threshold is input from the keyboard 31. Thereby, the parameter setting item is input to the CPU 28 of the main CPU board 19.

次いで、ソフトウエア制御により前記パラメータ設定項目がボンディングＣＰＵ基板１８のＣＰＵ２９からＩ／Ｏポート３２，３３を通してＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０に通知され、メモリ３４に格納される。すなわち、検出区間・開始位置設定がボンディングＣＰＵ基板１８のＣＰＵ２９からＩ／Ｏポート３２，３３を通してＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０に通知され（ＳＴ１１）、ＡＣ／ＤＣ方式設定がボンディングＣＰＵ基板１８のＣＰＵ２９からＩ／Ｏポート３２，３３を通してＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０に通知され（ＳＴ１２）、ＡＣの場合の発振周波数がボンディングＣＰＵ基板１８のＣＰＵ２９からＩ／Ｏポート３２，３３を通してＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０に通知され（ＳＴ１３）、検出しきい値がボンディングＣＰＵ基板１８のＣＰＵ２９からＩ／Ｏポート３２，３３を通してＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０に通知され（ＳＴ１４）、これらのパラメータ設定項目がメモリ３４に格納される。   Next, the parameter setting items are notified from the CPU 29 of the bonding CPU board 18 to the CPU 30 of the AC / DC non-detection board 10 through the I / O ports 32 and 33 by software control and stored in the memory 34. That is, the detection section / start position setting is notified from the CPU 29 of the bonding CPU board 18 to the CPU 30 of the AC / DC non-sticking detection board 10 through the I / O ports 32 and 33 (ST11), and the AC / DC system setting is set to the bonding CPU board 18. CPU 29 is notified to CPU 30 of AC / DC non-sticking detection board 10 through I / O ports 32 and 33 (ST12), and the oscillation frequency in the case of AC is transmitted from CPU 29 of bonding CPU board 18 through I / O ports 32 and 33 to AC. The CPU 30 of the / DC non-sticking detection board 10 is notified (ST13), and the detection threshold value is notified from the CPU 29 of the bonding CPU board 18 to the CPU 30 of the AC / DC non-sticking detection board 10 through the I / O ports 32 and 33 (ST14). These parameter setting items are stored in the memory 34. It is stored.

次いで、１ワイヤボンディングを行う（ＳＴ１５）。具体的には、ワイヤ（金線）１の先端を溶融してボールを形成し、キャピラリ２の先端で保持してキャピラリ２を第１ボンディング点である半導体チップ１３の電極１２の直上に位置させ、キャピラリ２を下降させてボールを電極１２に押し付けて加圧すると同時にキャピラリ２の先端に対してボンディングアームの超音波ホーンを介して超音波振動を印加する。これにより、電極にワイヤ１を接続する。   Next, one-wire bonding is performed (ST15). Specifically, the tip of the wire (gold wire) 1 is melted to form a ball and held at the tip of the capillary 2 so that the capillary 2 is positioned immediately above the electrode 12 of the semiconductor chip 13 as the first bonding point. Then, the capillary 2 is lowered and the ball is pressed against the electrode 12 to pressurize it, and at the same time, ultrasonic vibration is applied to the tip of the capillary 2 via the ultrasonic horn of the bonding arm. Thereby, the wire 1 is connected to the electrode.

上記のワイヤボンディング時に不着検出を行う（ＳＴ１６）。不着検出方式にはＡＣ方式とＤＣ方式の２種類がある。
まず前者のＡＣ方式について図４を参照しつつ説明する。ＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０からコントロール信号がＡＣ／ＤＣ切換スイッチ４９に送られ、Ｄ／Ａコンバータ３６がＡＣ用抵抗４０に接続された状態となり、ソフトウエア制御によりＣＰＵ３０内部で演算されＤ／Ａコンバータ３６、ＡＣ用抵抗４０を介してＳｉｎ信号（例えば図４に示すような加振波形４２）が出力部３８から出力され、この加振波形４２がワイヤ１を通して半導体チップ１３の電極１２に印加される。ワイヤが電極１２に確実にボンディング接続されると加振波形に比べて減衰した応答波形（検出波形）４３が増幅器（ＡＭＰ）３７、Ａ／Ｄコンバータ３５を通して検出される。加振するＳｉｎ信号の周期に合わせて、応答波形４３の保存と加算を行う。例えば、１周期を４分割し、１周期中に４回のサンプリングを行う。応答波形４３の１周期のうち最大値Ｖｉ[2]と最小値Ｖｉ[0]を測定し、この測定値を検出しきい値と比較し、検出しきい値の範囲内であれば着（ボンディング接続されたこと）と判断し、検出しきい値の範囲外であれば不着と判断する。この着／不着の結果は、Ｉ／Ｏポートを介してボンディングＣＰＵ基板１８のＣＰＵ２９に通知される。ワイヤが不着であると通知された場合、ワイヤボンディング装置を停止するなどのエラー処理が行われる。また、ワイヤが着（確実にボンディングされた）と通知された場合、次のワイヤボンディングを行う。 Non-bonding detection is performed during the wire bonding (ST16). There are two types of non-stick detection methods: an AC method and a DC method.
First, the former AC method will be described with reference to FIG. A control signal is sent from the CPU 30 of the AC / DC non-adherence detection board 10 to the AC / DC selector switch 49, the D / A converter 36 is connected to the AC resistor 40, and is calculated in the CPU 30 by software control. A Sin signal (for example, an excitation waveform 42 as shown in FIG. 4) is output from the output unit 38 via the / A converter 36 and the AC resistor 40, and the excitation waveform 42 passes through the wire 1 and the electrode 12 of the semiconductor chip 13. To be applied. When the wire is securely bonded to the electrode 12, a response waveform (detection waveform) 43 attenuated as compared with the excitation waveform is detected through the amplifier (AMP) 37 and the A / D converter 35. The response waveform 43 is stored and added in accordance with the period of the Sin signal to be excited. For example, one period is divided into four, and sampling is performed four times during one period. The maximum value Vi [2] and the minimum value Vi [0] are measured in one period of the response waveform 43, and the measured value is compared with the detection threshold value. If it is out of the detection threshold range, it is determined that it is not attached. The result of the attachment / non-attachment is notified to the CPU 29 of the bonding CPU board 18 through the I / O port. When notified that the wire is not attached, error processing such as stopping the wire bonding apparatus is performed. When it is notified that the wire has arrived (bonded reliably), the next wire bonding is performed.

後者のＤＣ方式について図５を参照しつつ説明する。
ＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０からコントロール信号がＡＣ／ＤＣ切換スイッチ４９に送られ、Ｄ／Ａコンバータ３６がＤＣ用抵抗４０に接続された状態となり、ソフトウエア制御によりＣＰＵ３０内部で演算されＤ／Ａコンバータ３６、ＤＣ用抵抗４０を介して一定値の信号（例えば図５に示すような出力波形４７）が出力部３８から出力され、この出力波形４７がワイヤ１を通して半導体チップ１３の電極１２に印加される。ワイヤが電極１２に確実にボンディング接続されると出力波形に比べて減衰した検出波形（応答信号）４８が増幅器（ＡＭＰ）３７、Ａ／Ｄコンバータ３５を通して検出される。出力する信号に合わせて、応答信号の加算を行う。例えば、所定期間を９分割し、その期間中に９回のサンプリングを行う。検出波形４８の所定期間のうち最大値と最小値を測定し、この測定値を検出しきい値と比較し、検出しきい値の範囲内であれば着（ボンディング接続されたこと）と判断し、検出しきい値の範囲外であれば不着と判断する。この着／不着の結果は、Ｉ／Ｏポートを介してボンディングＣＰＵ基板１８のＣＰＵ２９に通知される。ワイヤが不着であると通知された場合、ワイヤボンディング装置を停止するなどのエラー処理が行われる。また、ワイヤが着（確実にボンディングされた）と通知された場合、次のワイヤボンディングを行う。 The latter DC system will be described with reference to FIG.
A control signal is sent from the CPU 30 of the AC / DC non-adherence detection board 10 to the AC / DC selector switch 49, the D / A converter 36 is connected to the DC resistor 40, and is calculated in the CPU 30 by software control. A constant value signal (for example, an output waveform 47 as shown in FIG. 5) is output from the output unit 38 via the / A converter 36 and the DC resistor 40, and this output waveform 47 is passed through the wire 1 to the electrode 12 of the semiconductor chip 13. To be applied. When the wire is securely bonded to the electrode 12, a detection waveform (response signal) 48 attenuated as compared with the output waveform is detected through the amplifier (AMP) 37 and the A / D converter 35. The response signal is added in accordance with the output signal. For example, the predetermined period is divided into nine, and nine samplings are performed during that period. The maximum value and the minimum value are measured in a predetermined period of the detection waveform 48, and the measured value is compared with a detection threshold value. If it is out of the range of the detection threshold, it is determined as non-delivery. The result of the attachment / non-attachment is notified to the CPU 29 of the bonding CPU board 18 through the I / O port. When notified that the wire is not attached, error processing such as stopping the wire bonding apparatus is performed. When it is notified that the wire has arrived (bonded reliably), the next wire bonding is performed.

ワイヤが確実にボンディングされたと判断した場合、次のワイヤボンディングについてのパラメータ設定項目の設定をソフトウエア制御により行い（ＳＴ１１〜ＳＴ１４）、ワイヤボンディングを行い（ＳＴ１５）、ＡＣ方式又はＤＣ方式の不着検出を行う（ＳＴ１６）。所定のワイヤ数まで繰り返し、.すべてのワイヤボンディングが行われたらワイヤボンディング作業を終了する（ＳＴ１７）。   When it is determined that the wire is securely bonded, parameter setting items for the next wire bonding are set by software control (ST11 to ST14), wire bonding is performed (ST15), and AC method or DC method non-detection is detected. (ST16). Repeat until the predetermined number of wires. When all wire bonding is performed, the wire bonding operation is finished (ST17).

上述したワイヤボンディング及び不着検出は、図９に示す第１ボンディング点１５である半導体チップの電極へのワイヤボンディングについて説明しているが、図９に示す第２ボンディング点１６であるリードへのワイヤボンディングについても上述した不着検出方法とほぼ同様に不着検出することが可能であり、またワイヤ１の先端を溶融してボールを形成し、このボールを半導体チップの電極又はパッドにバンプとして接続する場合についても上述した不着検出方法とほぼ同様に不着検出することが可能である。但し、第２ボンディング点及びバンプについて不着検出する場合、第２ボンディング点及びバンプそれぞれに対応させた出力信号（出力波形）及び検出しきい値を用いることが好ましい。   In the above-described wire bonding and non-bonding detection, the wire bonding to the electrode of the semiconductor chip, which is the first bonding point 15 shown in FIG. 9, has been described, but the wire to the lead, which is the second bonding point 16 shown in FIG. Bonding can be detected in substantially the same manner as the above-described non-stick detection method, and the tip of the wire 1 is melted to form a ball and the ball is connected to an electrode or pad of a semiconductor chip as a bump. The non-stick detection can be performed in substantially the same manner as the non-stick detection method described above. However, when non-bonding detection is performed for the second bonding point and the bump, it is preferable to use an output signal (output waveform) and a detection threshold corresponding to the second bonding point and the bump, respectively.

図６は、ＡＣ方式の不着検出方法の他の例として平均検出方法を説明する図である。
電圧＋レベルと電圧−レベルのしきい値を設定し、このしきい値と検出波形を比較する。検出波形のピークの平均値を求め、この平均値が電圧＋レベルと電圧−レベルのしきい値の範囲内であれば着（確実にボンディング接続されたこと）と判定し、平均値がしきい値の範囲外であれば不着と判定する。 FIG. 6 is a diagram for explaining an average detection method as another example of the AC non-stick detection method.
Voltage + level and voltage-level threshold values are set, and this threshold value is compared with the detected waveform. The average value of the peaks of the detected waveform is obtained. If this average value is within the range of the voltage + level and voltage-level threshold values, it is determined that the wear has been made (bonding has been securely made), and the average value is the threshold. If it is out of the value range, it is determined as non-delivery.

図７は、ＡＣ方式の不着検出方法の他の例として割合検出方法を説明する図である。
電圧＋レベルと電圧−レベルを決めることでＯＫ範囲を設定し、このＯＫ範囲を外れた場合をＮＧ範囲と設定し、このＯＫ範囲と検出波形を比較した場合、検出波形のうちＯＫ範囲内に入っている割合をしきい値として設定する。そして、検出波形のうちＯＫ範囲内に入っている割合がしきい値の範囲内であれば着（確実にボンディング接続されたこと）と判定し、前記割合がしきい値の範囲外であれば不着と判定する。このような割合検出の場合、平均検出では比較的に検出が困難な検出電圧レベルの過渡状態についての検出が可能となる。 FIG. 7 is a diagram illustrating a ratio detection method as another example of the AC non-stick detection method.
The OK range is set by determining the voltage + level and the voltage-level, the case where the OK range is deviated is set as the NG range, and when this OK range and the detected waveform are compared, the detected waveform is within the OK range. Set the percentage that is included as the threshold. If the percentage of the detected waveform that falls within the OK range is within the threshold range, it is determined that the wear has been made (securely connected), and if the percentage is outside the threshold range, Judge as non-delivery. In such a ratio detection, it is possible to detect a transient state of a detection voltage level that is relatively difficult to detect by average detection.

上記実施の形態１によれば、検出区間・開始位置、ＡＣ／ＤＣ方式、ＡＣの場合の周波数、検出しきい値などのパラメータ設定項目についてワイヤ毎に設定できるため、ＡＣ／ＤＣ特性の混在しているデバイスに対しても不着検出が可能となる。つまり、従来の不着検出装置に比べて不着検出機能の向上を図ることができる。また、不着検出時のパラメータ設定項目をワイヤ毎に設定できるため、ＡＣ特性がワイヤ毎に変化するデバイスにも不着検出が可能となり、対応可能なデバイスを増やすことができる。また、不着検出機能の向上を図ることができるため、半導体チップの電極の不良を検出することが可能となる。   According to the first embodiment, parameter setting items such as the detection section / start position, the AC / DC system, the frequency in the case of AC, and the detection threshold can be set for each wire, so that AC / DC characteristics are mixed. It is possible to detect non-delivery with respect to a device that is currently on. That is, the non-stick detection function can be improved as compared with the conventional non-stick detection device. Further, since parameter setting items at the time of non-stick detection can be set for each wire, non-stick detection can be performed even for devices whose AC characteristics change for each wire, and the number of devices that can be handled can be increased. In addition, since the non-stick detection function can be improved, it is possible to detect a defect in the electrode of the semiconductor chip.

（実施の形態２）
図８は、本発明の実施の形態２によるワイヤボンディング装置における不着検出装置を説明する図である。この不着検出装置は、不着検出を行うためのパラメータ設定項目（ＡＣ方式又はＤＣ方式、検出しきい値としての電圧レベル等）をソフトウエア制御により自動的に設定する機能を備えている。なお、この機能以外の部分については、実施の形態１によるワイヤボンディング装置及び不着検出装置とほぼ同様であるので、同様の部分の説明は省略する。 (Embodiment 2)
FIG. 8 is a diagram for explaining a non-stick detection device in the wire bonding apparatus according to the second embodiment of the present invention. This non-stick detection device has a function of automatically setting parameter setting items (AC method or DC method, voltage level as a detection threshold value, etc.) for performing non-stick detection by software control. Since parts other than this function are substantially the same as those of the wire bonding apparatus and non-sticking detection apparatus according to the first embodiment, description of the same parts is omitted.

図８は、ワイヤボンディングを行う際のワイヤの先端の動きを模式的に示している。[1]の区間は、ワイヤの先端が図９に示す第１ボンディング点１５に到達する前のオープン状態の区間である。[2]の区間は、ワイヤの先端が第１ボンディング点１５に接続されたボンディング着状態の区間である。（[2]）の区間は、図９に示す第２ボンディング点１６にワイヤの先端が接続されたボンディング着状態の区間である。[3]の区間及び[4]の区間は、第２ボンディング点にワイヤボンディングされ、リード上のワイヤがカットされた後のオープン状態の区間である。   FIG. 8 schematically shows the movement of the tip of the wire when wire bonding is performed. The section [1] is an open section before the tip of the wire reaches the first bonding point 15 shown in FIG. The section [2] is a section in the bonded state in which the tip of the wire is connected to the first bonding point 15. The section ([2]) is a section in the bonded state in which the tip of the wire is connected to the second bonding point 16 shown in FIG. The section [3] and the section [4] are open sections after wire bonding is performed at the second bonding point and the wires on the leads are cut.

実施の形態１では、不着検出を行うためのパラメータ設定項目をキーボードから入力しているが、実施の形態２では、不着検出を行うためのパラメータ設定項目をソフトウエア制御により自動的に設定する。   In the first embodiment, parameter setting items for performing non-stick detection are input from the keyboard. In the second embodiment, parameter setting items for performing non-stick detection are automatically set by software control.

１番目の半導体チップに対して電極及びリードにワイヤボンディングを行いながら、次のような測定及び演算をソフトウエア制御により行い、パラメータ設定項目を自動的に設定する。
まず第１ボンディング点である半導体チップの電極にワイヤを接続する前の[1]の区間で、ＡＣ方式の出力波形（加振波形）をワイヤに印加する。即ち、図１に示すＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０からコントロール信号がＡＣ／ＤＣ切換スイッチ４９に送られ、Ｄ／Ａコンバータ３６がＡＣ用抵抗４０に接続された状態となり、ソフトウエア制御によりＣＰＵ３０内部で演算されＤ／Ａコンバータ３６、ＡＣ用抵抗４０を介してＡＣ方式の出力波形がワイヤに印加される。ワイヤが半導体チップの電極にボンディング接続されていないオープン状態であるため、出力波形に比べて減衰しない応答波形（ＡＣオープン時波形）が増幅器（ＡＭＰ）３７、Ａ／Ｄコンバータ３５を通して検出される。 While wire bonding is performed on the electrodes and leads of the first semiconductor chip, the following measurement and calculation are performed by software control, and parameter setting items are automatically set.
First, an AC output waveform (excitation waveform) is applied to the wire in the section [1] before the wire is connected to the electrode of the semiconductor chip as the first bonding point. That is, a control signal is sent from the CPU 30 of the AC / DC non-sticking detection board 10 shown in FIG. 1 to the AC / DC changeover switch 49, and the D / A converter 36 is connected to the AC resistor 40, and is controlled by software control. An AC output waveform is applied to the wire through the D / A converter 36 and the AC resistor 40, which is calculated inside the CPU 30. Since the wire is in an open state in which the wire is not bonded to the electrode of the semiconductor chip, a response waveform (AC open waveform) that is not attenuated compared to the output waveform is detected through the amplifier (AMP) 37 and the A / D converter 35.

[1]の区間では、上記のＡＣオープンの応答波形を検出するのに加えて、ＤＣオープンの応答波形を検出する。即ち、図１に示すＡＣ／ＤＣ不着検出基板１０のＣＰＵ３０からコントロール信号がＡＣ／ＤＣ切換スイッチ４９に送られ、Ｄ／Ａコンバータ３６がＤＣ用抵抗４０に接続された状態となり、ソフトウエア制御によりＣＰＵ３０内部で演算されＤ／Ａコンバータ３６、ＤＣ用抵抗４０を介して出力波形がワイヤに印加される。ワイヤが半導体チップの電極にボンディング接続されていないオープン状態であるため、出力波形に比べて減衰しない応答波形（ＤＣオープン時波形）が増幅器（ＡＭＰ）３７、Ａ／Ｄコンバータ３５を通して検出される。   In the section [1], in addition to detecting the AC open response waveform, a DC open response waveform is detected. That is, a control signal is sent from the CPU 30 of the AC / DC non-sticking detection board 10 shown in FIG. 1 to the AC / DC changeover switch 49, and the D / A converter 36 is connected to the DC resistor 40, and is controlled by software control. It is calculated inside the CPU 30 and an output waveform is applied to the wire via the D / A converter 36 and the DC resistor 40. Since the wire is in an open state in which the wire is not bonded to the electrode of the semiconductor chip, a response waveform (DC open waveform) that is not attenuated compared to the output waveform is detected through the amplifier (AMP) 37 and the A / D converter 35.

次に、ワイヤの先端が第１ボンディング点に接続されたボンディング着状態の[2]の区間で、[1]の区間の場合と同様の方法でＡＣ方式の出力波形（加振波形）をワイヤに印加する。このときはワイヤが電極にボンディング接続されているため、出力波形に比べて減衰した応答波形（ＡＣ検出波形）が検出される。   Next, in the section [2] in the bonded state where the tip of the wire is connected to the first bonding point, the output waveform (excitation waveform) of the AC method is wired in the same manner as in the section [1]. Apply to. At this time, since the wire is bonded to the electrode, a response waveform (AC detection waveform) attenuated compared to the output waveform is detected.

[2]の区間では、上記の応答波形を検出するのに加えて、ＤＣ検出の応答波形を検出する。即ち、[1]の区間の場合と同様の方法でＤＣ方式の出力波形をワイヤに印加する。このときはワイヤが電極にボンディング接続されているため、出力波形に比べて減衰した応答波形（ＤＣ検出波形）が検出される。   In the section [2], in addition to detecting the above response waveform, a DC detection response waveform is detected. That is, a DC output waveform is applied to the wire in the same manner as in the section [1]. At this time, since the wire is bonded to the electrode, a response waveform (DC detection waveform) attenuated compared to the output waveform is detected.

次に、第２ボンディング点にワイヤの先端が接続されたボンディング着状態の（[2]）の区間で、[2]の区間の場合と同様の方法でＡＣ方式の出力波形（加振波形）をワイヤに印加する。このときはワイヤがリードにボンディング接続されているため、出力波形に比べて減衰した応答波形（ＡＣ検出波形）が検出される。   Next, the output waveform (excitation waveform) of the AC system in the same manner as in the section [2] in the section ([2]) with the wire tip connected to the second bonding point Is applied to the wire. At this time, since the wire is bonded to the lead, a response waveform (AC detection waveform) attenuated compared to the output waveform is detected.

（[2]）の区間では、上記の応答波形を検出するのに加えて、ＤＣ検出の応答波形を検出する。即ち、[2]の区間の場合と同様の方法でＤＣ方式の出力波形をワイヤに印加する。このときはワイヤがリードにボンディング接続されているため、出力波形に比べて減衰した応答波形（ＤＣ検出波形）が検出される。   In the section ([2]), in addition to detecting the above response waveform, a DC detection response waveform is detected. That is, a DC output waveform is applied to the wire in the same manner as in the section [2]. At this time, since the wire is bonded to the lead, a response waveform (DC detection waveform) attenuated compared to the output waveform is detected.

次に、リード上のワイヤがカットされた後のオープン状態の[3]の区間で、ＡＣオープン時波形とＡＣ検出波形の差を演算すると共に、ＤＣオープン時波形とＤＣ検出波形の差を演算する。両者のうち差の大きい方を検出モードとして設定する。つまり、ＡＣオープン時波形とＡＣ検出波形の差の方が大きい場合はＡＣ方式を検出モードとして設定し、ＤＣオープン時波形とＤＣ検出波形の差の方が大きい場合はＤＣ方式を検出モードとして設定する。これは、[2]の区間の検出モードと（[2]）の区間の検出モードの両方について行う。   Next, the difference between the AC open waveform and the AC detection waveform is calculated and the difference between the DC open waveform and the DC detection waveform is calculated in the section [3] in the open state after the wire on the lead is cut. To do. The larger of the two is set as the detection mode. In other words, when the difference between the AC open waveform and the AC detection waveform is larger, the AC method is set as the detection mode, and when the difference between the DC open waveform and the DC detection waveform is larger, the DC method is set as the detection mode. To do. This is performed for both the detection mode in the section [2] and the detection mode in the section ([2]).

次に、リード上のワイヤがカットされた後のオープン状態の[4]の区間で、[3]の区間において設定された検出モードのオープン時波形と検出波形の差から検出波形に＋αをした値を電圧レベル（検出しきい値）として設定する。これは、[2]の区間の検出モードと（[2]）の区間の検出モードの両方について行う。   Next, in the section [4] in the open state after the wire on the lead is cut, + α was added to the detected waveform from the difference between the open waveform and the detected waveform in the detection mode set in the section [3]. Set the value as the voltage level (detection threshold). This is performed for both the detection mode in the section [2] and the detection mode in the section ([2]).

上記のような検出しきい値の設定を、半導体チップの全ての第１ボンディング点及びリードの全ての第２ボンディング点について行う。このようにして不着検出を行うためのパラメータ設定項目をソフトウエア制御により自動的に設定する。   The detection threshold values as described above are set for all first bonding points of the semiconductor chip and all second bonding points of the leads. In this way, parameter setting items for detecting non-stickiness are automatically set by software control.

２番目の半導体チップからは、パラメータ設定項目をキーボードから入力した後の実施の形態１の方法で不着検出を行いながらワイヤボンディング装置によってワイヤボンディングを行う。   From the second semiconductor chip, wire bonding is performed by the wire bonding apparatus while non-sticking detection is performed by the method of the first embodiment after inputting the parameter setting items from the keyboard.

上記実施の形態２においては実施の形態１と同様の効果を得ることができる。
さらに、上記実施の形態２では、不着検出を行うためのパラメータ設定項目をソフトウエア制御により自動的に設定できるため、オペレータがキーボードからパラメータ設定項目を入力する必要がなくなる。 In the second embodiment, the same effect as in the first embodiment can be obtained.
Furthermore, in the second embodiment, parameter setting items for performing non-delivery detection can be automatically set by software control, so that it is not necessary for the operator to input parameter setting items from the keyboard.

なお、本発明は上記実施の形態に限定されず、本発明の主旨を逸脱しない範囲内で種々変更して実施することが可能である。例えば、実施の形態１と実施の形態２を組み合わせたワイヤボンディング装置として実施することも可能である。つまり、パラメータ設定項目をキーボードから入力するモードと、パラメータ設定項目をソフトウエア制御により自動的に設定するモードの両方を備えたワイヤボンディング装置であって、モードを切り替えることによって両方のモードを実施可能なワイヤボンディング装置である。   Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, it can be implemented as a wire bonding apparatus in which the first embodiment and the second embodiment are combined. In other words, it is a wire bonding device that has both a mode for inputting parameter setting items from the keyboard and a mode for automatically setting parameter setting items by software control. Both modes can be implemented by switching modes. Wire bonding apparatus.

また、上記実施の形態２では、半導体チップの電極とリードをワイヤでボンディング接続する際のパラメータ設定項目をソフトウエア制御により自動的に設定することについて説明しているが、半導体チップの電極又はパッドにバンプを接続する際のパラメータ設定項目をソフトウエア制御により自動的に設定することに本発明を適用することも可能である。この場合は、（[2]）の区間を除いた方法、即ち実施の形態２における[1]、[2]、[3]及び[4]それぞれの区間で行うことを実施すればよい。   In the second embodiment, the parameter setting items when the electrodes and leads of the semiconductor chip are bonded with wires are automatically set by software control. It is also possible to apply the present invention to automatically setting parameter setting items when connecting bumps to the board by software control. In this case, the method excluding the section ([2]), that is, performing in the sections [1], [2], [3] and [4] in the second embodiment may be performed.

本発明の実施の形態１による不着検出装置を備えたワイヤボンディング装置を模式的に示すブロック図である。It is a block diagram which shows typically the wire bonding apparatus provided with the non-sticking detection apparatus by Embodiment 1 of this invention. 図１に示す不着検出基板とワイヤボンディング装置との配線による接続関係を概略的に示す図である。It is a figure which shows roughly the connection relationship by the wiring of the non-sticking detection board | substrate shown in FIG. 1, and a wire bonding apparatus. 図１に示す不着検出装置によって不着検出を行う流れを示すフローチャートである。It is a flowchart which shows the flow which performs non-sticking detection by the non-sticking detection apparatus shown in FIG. ＡＣ方式のワイヤについて不着検出を行う際の出力波形（加振波形）と応答波形を示す図である。It is a figure which shows the output waveform (excitation waveform) at the time of performing non-contact detection about an AC system wire, and a response waveform. ＤＣ方式のワイヤについて不着検出を行う際の出力波形と応答波形を示す図である。It is a figure which shows the output waveform and response waveform at the time of performing non-sticking detection about a DC system wire. ＡＣ方式の不着検出方法の他の例として平均検出方法を説明する図である。It is a figure explaining the average detection method as another example of the non-contact detection method of AC system. ＡＣ方式の不着検出方法の他の例として割合検出方法を説明する図である。It is a figure explaining the ratio detection method as another example of the non-contact detection method of AC system. 本発明の実施の形態２によるワイヤボンディング装置における不着検出装置を説明する図である。It is a figure explaining the non-sticking detection apparatus in the wire bonding apparatus by Embodiment 2 of this invention. （ａ）乃至（ｄ）は、ワイヤボンディング装置によるワイヤボンディングを行う工程を説明する図である。(A) thru | or (d) is a figure explaining the process of performing the wire bonding by a wire bonding apparatus. 従来の不着検出方法を示すフローチャートである。It is a flowchart which shows the conventional non-sticking detection method. 従来のワイヤボンディング装置のＤＣ専用不着検出装置を示すブロック図である。It is a block diagram which shows the non-sticking detection apparatus only for DC of the conventional wire bonding apparatus. 従来のワイヤボンディング装置のＡＣ専用不着検出装置の具体的な構成を示す回路図である。It is a circuit diagram which shows the specific structure of the non-sticking detection apparatus only for AC of the conventional wire bonding apparatus.

符号の説明Explanation of symbols

１…ワイヤ、２…キャピラリ、３…ワイヤカットクランプ、４…放電電極、５…交流ブリッジ回路、５ａ…交流発生器、５ｂ…同軸ケーブル、５ｃ１…第１直列回路、５ｃ２…第２直列回路、Ｘ…第１接続点、Ｙ…第２接続点、６…差動増幅器、７…トランス、８…絶対値変換器、９…第１レベル弁別器、１０…ＡＣ／ＤＣ不着検出基板、１１…リードフレーム、１２…半導体チップの電極、１３…半導体チップ、１４…リード、１５…第１ボンディング点、１６…第２ボンディング点、１７…ボンディングステージ、１８…ボンディングＣＰＵ基板、１９…メインＣＰＵ基板、２０…ボール、２１…ワイヤスプール、２２…スプールワイヤ端、２３…ローパスフィルタ、２４…第２レベル弁別器、２５…論理積器、２６…ボンディング判定器、２７…ボンディング検出切替器、２８，２９，３０…ＣＰＵ、３１…キーボード、３２，３３…Ｉ／Ｏポート、３４…メモリ、３５…Ａ／Ｄコンバータ、３６…Ｄ／Ａコンバータ、３７…増幅器（ＡＭＰ）、３８…出力部、３９…接地電位（ＧＮＤ）、４０…ＡＣ用抵抗、４１…ＤＣ用抵抗、４２…加振波形、４３…応答波形（検出波形）、４４…ＤＣ用不着検出基板、４５…直流発生器、４６…抵抗、４７…出力波形、４８…検出波形（応答信号）、４９…ＡＣ／ＤＣ切換スイッチ DESCRIPTION OF SYMBOLS 1 ... Wire, 2 ... Capillary, 3 ... Wire cut clamp, 4 ... Discharge electrode, 5 ... AC bridge circuit, 5a ... AC generator, 5b ... Coaxial cable, 5c1 ... 1st series circuit, 5c2 ... 2nd series circuit, X ... 1st connection point, Y ... 2nd connection point, 6 ... Differential amplifier, 7 ... Transformer, 8 ... Absolute value converter, 9 ... 1st level discriminator, 10 ... AC / DC non-adherence detection board, 11 ... Lead frame, 12 ... Semiconductor chip electrode, 13 ... Semiconductor chip, 14 ... Lead, 15 ... First bonding point, 16 ... Second bonding point, 17 ... Bonding stage, 18 ... Bonding CPU board, 19 ... Main CPU board, 20 ... ball, 21 ... wire spool, 22 ... spool wire end, 23 ... low pass filter, 24 ... second level discriminator, 25 ... logical product, 26 ... bonding judgment 27 ... Bonding detection switching device, 28, 29, 30 ... CPU, 31 ... Keyboard, 32, 33 ... I / O port, 34 ... Memory, 35 ... A / D converter, 36 ... D / A converter, 37 ... Amplifier (AMP), 38 ... output unit, 39 ... ground potential (GND), 40 ... AC resistance, 41 ... DC resistance, 42 ... excitation waveform, 43 ... response waveform (detection waveform), 44 ... non-stick detection for DC Substrate, 45 ... DC generator, 46 ... resistance, 47 ... output waveform, 48 ... detection waveform (response signal), 49 ... AC / DC selector switch

Claims (4)

半導体チップの電極とリードフレームのリードをワイヤによって接続するワイヤボンディング装置又は半導体チップのパッドにバンプをボンディングするワイヤボンディング装置において、
ワイヤ又はバンプにＡＣ方式の出力波形を印加するＡＣ印加手段と、
ワイヤ又はバンプにＤＣ方式の出力波形を印加するＤＣ印加手段と、
前記ＡＣ方式の出力波形をワイヤ又はバンプに印加するか、前記ＤＣ方式の出力波形をワイヤ又はバンプに印加するかを切り換える切換手段と、
前記ワイヤ又はバンプからＡＣ方式又はＤＣ方式の応答波形を検出する検出手段と、
前記応答波形を検出しきい値と比較し、前記検出しきい値の範囲内であればワイヤ又はバンプが確実にボンディング接続されたと判定し、前記検出しきい値の範囲外であればワイヤ又はバンプが不着であると判定する判定手段と、
を具備し、
前記ＡＣ印加手段又は前記ＤＣ印加手段によりＡＣ方式又はＤＣ方式の出力波形を印加する際のパラメータ設定項目を、前記ワイヤ毎又は前記バンプ毎にソフトウエア制御により設定することを特徴とするワイヤボンディング装置。 In a wire bonding apparatus that connects electrodes of a semiconductor chip and leads of a lead frame by wires or a wire bonding apparatus that bonds bumps to pads of a semiconductor chip,
AC applying means for applying an AC output waveform to the wire or bump;
DC application means for applying a DC output waveform to the wire or bump;
Switching means for switching between applying the AC output waveform to the wire or bump or applying the DC output waveform to the wire or bump;
Detection means for detecting an AC or DC response waveform from the wire or bump;
The response waveform is compared with a detection threshold, and if it is within the range of the detection threshold, it is determined that the wire or bump is securely bonded, and if it is outside the range of the detection threshold, the wire or bump is determined. Determining means for determining that is non-delivery,
Equipped with,
A wire bonding apparatus characterized in that parameter setting items for applying an AC or DC output waveform by the AC applying means or the DC applying means are set by software control for each wire or for each bump. . 前記ＡＣ印加手段はＣＰＵ、Ｄ／Ａコンバータ及びＡＣ用抵抗を有し、前記ＤＣ印加手段はＣＰＵ、Ｄ／Ａコンバータ及びＤＣ用抵抗を有し、前記切換手段がＡＣ／ＤＣ切換スイッチであり、前記検出手段は増幅器、Ａ／Ｄコンバータ及びＣＰＵを有し、前記判定手段はＣＰＵを有していることを特徴とする請求項１に記載のワイヤボンディング装置。 The AC applying means has a CPU, a D / A converter and an AC resistor, the DC applying means has a CPU, a D / A converter and a DC resistor, and the switching means is an AC / DC changeover switch, The wire bonding apparatus according to claim 1 , wherein the detection unit includes an amplifier, an A / D converter, and a CPU, and the determination unit includes a CPU. 前記ＡＣ印加手段又は前記ＤＣ印加手段によりＡＣ方式又はＤＣ方式の出力波形をワイヤ毎又はバンプ毎に前記切換手段により切り換えながら印加し、前記検出手段によりＡＣ方式又はＤＣ方式の応答波形を検出し、前記判定手段によりボンディング接続されたか不着であるかを判定することをソフトウエア制御により行うことを特徴とする請求項１又は２に記載のワイヤボンディング装置。 Applying the AC or DC output waveform by the switching means for each wire or bump by the AC applying means or the DC applying means, and detecting the AC or DC response waveform by the detecting means, 3. The wire bonding apparatus according to claim 1, wherein the determination unit determines whether the bonding connection or non-bonding is performed by software control. 前記ＡＣ印加手段によりＡＣ方式の出力波形を不着状態のワイヤ又はバンプに印加し、前記検出手段により不着状態のＡＣ方式の応答波形を検出し、前記切換手段により切り換えて前記ＤＣ印加手段によりＤＣ方式の出力波形を不着状態のワイヤ又はバンプに印加し、前記検出手段により不着状態のＤＣ方式の応答波形を検出し、前記ＡＣ印加手段によりＡＣ方式の出力波形をボンディング接続した状態のワイヤ又はバンプに印加し、前記検出手段によりボンディング接続状態のＡＣ方式の応答波形を検出し、前記切換手段により切り換えて前記ＤＣ印加手段によりＤＣ方式の出力波形をボンディング接続状態のワイヤ又はバンプに印加し、前記検出手段によりボンディング接続状態のＤＣ方式の応答波形を検出し、前記不着状態のＡＣ方式の応答波形と前記ボンディング状態のＡＣ方式の応答波形の差を演算すると共に、前記不着状態のＤＣ方式の応答波形と前記ボンディング状態のＤＣ方式の応答波形の差を演算し、両者のうち差の大きい方を検出モードとして設定し、前記検出モードとして設定されたＡＣ方式又はＤＣ方式の検出しきい値を前記ボンディング状態のＡＣ方式の応答波形又は前記ボンディング状態のＤＣ方式の応答波形から設定することをソフトウエア制御により自動で行うことを特徴とする請求項１乃至３のいずれか一項に記載のワイヤボンディング装置。 The AC applying waveform is applied to the non-attached wire or bump by the AC applying means, the non-attached AC response waveform is detected by the detecting means, switched by the switching means, and the DC applying means by the DC applying means. Is applied to the non-attached wire or bump, the non-attached DC response waveform is detected by the detection means, and the AC output waveform is bonded to the wire or bump in the AC connection means by the AC applying means. The detection means detects the AC connection response waveform in the bonding connection state, switches the switching means, applies the DC output waveform to the bonding connection state wire or bump, and detects the detection. Means for detecting the response waveform of the DC system in the bonding connection state, and the AC system in the non-attached state The difference between the response waveform and the AC response waveform in the bonding state is calculated, and the difference between the non-attached DC response waveform and the bonding DC response waveform is calculated. Is set as the detection mode, and the detection threshold of the AC method or the DC method set as the detection mode is set from the AC response waveform in the bonding state or the DC response waveform in the bonding state. The wire bonding apparatus according to any one of claims 1 to 3 , wherein the wire bonding apparatus is automatically performed by software control.
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