JP4095961B2 - 電気的な多層素子 - Google Patents
電気的な多層素子 Download PDFInfo
- Publication number
- JP4095961B2 JP4095961B2 JP2003531482A JP2003531482A JP4095961B2 JP 4095961 B2 JP4095961 B2 JP 4095961B2 JP 2003531482 A JP2003531482 A JP 2003531482A JP 2003531482 A JP2003531482 A JP 2003531482A JP 4095961 B2 JP4095961 B2 JP 4095961B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance
- substrate
- stack
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 28
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
- 229910010293 ceramic material Inorganic materials 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Details Of Resistors (AREA)
- Coils Or Transformers For Communication (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Description
図1は図2のD−Dに沿って切断した見た断面を示し、
図2は本発明の素子の長手方向の断面を示し、
図3は図2のE−Eに沿って切断した見た断面を示し、
図4は図2の素子の平面を示し、
図5は図2の素子の側面を示し、
図6は図2の素子の等価回路を示し、
図7は図1に図示の抵抗の別の可能な実施例を示し、
図8は図1および図7に図示の抵抗の別の可能な実施例を示し、
図9は図2の素子の減衰特性を略示している。
Claims (14)
- 下記の基体(1)を備えたことを特徴とする電気的な多層素子。
該基体(1)は2つの多層バリスタ(VDR1,VDR2)および抵抗(4)から形成されているπフィルタを有しており、
該基体(1)は、上下方向に重ねられているセラミックの誘電体層(2)のスタックを有し、
該基体(1)は、その表面に配置されている少なくとも4つの外部コンタクト(10,11,12,13)を有し、
基体(1)中に、それぞれ上下方向に重ねられていて、誘電体層(2)によって相互に分離されている電極層(9)の2つのスタック(7,8)が並んで配置されており、
第1のスタックの電極層(7)は、第1の外部コンタクト(10)および第2の外部コンタクト(11)に接続されており、
第2のスタックの電極層(8)は、第3の外部コンタクト(12)および第4の外部コンタクト(13)に接続されており、
なお、前記第1のスタック(7)および第2のスタック(8)は、それぞれ、前記多層バリスタ(VDR1,VDR2)の部分であり、
前記電極層(9)のスタック(7,8)の上側および下側に、前記抵抗(4)に対応する抵抗(41,42)がそれぞれ配置されており、かつ、
前記それぞれの抵抗(41,42)は、前記第1の外部コンタクト(10)よび第4の外部コンタクト(13)に並列に接続されており、
該基体(1)は、記誘電体層(2)に対して平行に延在している平面(14)に対して対称的に形成されている。 - 誘電体層(2)および抵抗(4,41,42)は唯一の焼結ステップで共通に焼結されておりかつモノリシック体を形成している、請求項1記載の素子。
- 基体(1)に電極層(9)が配置されておりかつ
抵抗(4,41,42)の平面には電極層(9)が存在していない、請求項1または2記載の素子。 - 抵抗(41,42)は外部コンタクト(10,13)間で複数回曲げられたストリップの形状を有する、請求項1から3までのいずれかに記載の素子。
- 該ストリップの長さは少なくともその幅(b)の10倍以上である、請求項4記載の素子。
- 抵抗(4,41,42)はミアンダの形状を有している、請求項4又は5記載の素子。
- 抵抗(4,41,42)は、少なくとも0.1Ωの面積抵抗を有している抵抗材料から形成されている、請求項1から6までのいずれか1項記載の素子。
- 抵抗(4,41,42)は、銀およびパラジウムから成る合金を含んでいる抵抗材料から形成されており、ここでパラジウムは合金中15ないし<100重量パーセントの成分を有している、請求項1から6までのいずれか1項記載の素子。
- パラジウムの成分は50および70重量パーセント間にある、請求項8記載の素子。
- 抵抗材料は更に、抵抗材料の残りの成分の比抵抗より少なくとも10倍は大きい比抵抗を有している付加材料を70重量パーセントまで含んでいる、請求項1から8までのいずれか1項記載の素子。
- 付加材料はAl2O3を含んでいる、請求項10記載の素子。
- 誘電体層(2)は、焼結温度が950℃および1200℃間にあるセラミック材料を含んでいる、請求項1から11までのいずれか1項記載の素子。
- 誘電体層(2)はBaTiO3をベースとしたセラミックを含んでいる、請求項12記載の素子。
- 誘電体層(2)はバリスタセラミックを含んでいる、請求項12記載の素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10144364A DE10144364A1 (de) | 2001-09-10 | 2001-09-10 | Elektrisches Vielschichtbauelement |
PCT/DE2002/002952 WO2003028045A2 (de) | 2001-09-10 | 2002-08-12 | Elektrisches vielschichtbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005504438A JP2005504438A (ja) | 2005-02-10 |
JP4095961B2 true JP4095961B2 (ja) | 2008-06-04 |
Family
ID=7698380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003531482A Expired - Fee Related JP4095961B2 (ja) | 2001-09-10 | 2002-08-12 | 電気的な多層素子 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7012501B2 (ja) |
EP (1) | EP1425762B1 (ja) |
JP (1) | JP4095961B2 (ja) |
CN (1) | CN100490025C (ja) |
AT (1) | ATE352847T1 (ja) |
DE (2) | DE10144364A1 (ja) |
TW (1) | TW569247B (ja) |
WO (1) | WO2003028045A2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10356498A1 (de) * | 2003-12-03 | 2005-07-07 | Epcos Ag | Elektrisches Bauelement und Schaltungsanordnung |
DE102004010001A1 (de) * | 2004-03-01 | 2005-09-22 | Epcos Ag | Elektrisches Bauelement und schaltungsanordnung mit dem Bauelement |
US7763833B2 (en) * | 2004-03-12 | 2010-07-27 | Goodrich Corp. | Foil heating element for an electrothermal deicer |
DE102004037588A1 (de) * | 2004-08-03 | 2006-02-23 | Epcos Ag | Elektrisches Bauelement und Verfahren zur Herstellung eines elektrischen Bauelements |
JP4715248B2 (ja) * | 2005-03-11 | 2011-07-06 | パナソニック株式会社 | 積層セラミック電子部品 |
US7923668B2 (en) * | 2006-02-24 | 2011-04-12 | Rohr, Inc. | Acoustic nacelle inlet lip having composite construction and an integral electric ice protection heater disposed therein |
DE102006060634A1 (de) | 2006-12-21 | 2008-06-26 | Robert Bosch Gmbh | Verfahren zur Herstellung eines elektrischen Widerstands auf einem Substrat |
DE102007046607A1 (de) | 2007-09-28 | 2009-04-02 | Epcos Ag | Elektrisches Vielschichtbauelement sowie Verfahren zur Herstellung eines elektrischen Vielschichtbauelements |
US8264816B2 (en) * | 2009-08-24 | 2012-09-11 | Kemet Electronics Corporation | Externally fused and resistively loaded safety capacitor |
US20130058004A1 (en) * | 2011-09-01 | 2013-03-07 | Medtronic, Inc. | Feedthrough assembly including underfill access channel and electrically insulating material |
WO2013088957A1 (ja) * | 2011-12-16 | 2013-06-20 | Tdk株式会社 | 抵抗体内蔵多層ガラスセラミック基板 |
KR20150069901A (ko) * | 2013-12-16 | 2015-06-24 | 삼성전기주식회사 | 칩 저항기 |
WO2018129417A1 (en) * | 2017-01-06 | 2018-07-12 | Feldman Benjamin F | Operating system for a cooking appliance |
CN107393784A (zh) * | 2017-09-07 | 2017-11-24 | 上海长园维安电子线路保护有限公司 | 一种可以耐受高压的自控制型保护器及其制备方法 |
JP7027176B2 (ja) * | 2018-01-22 | 2022-03-01 | ラピスセミコンダクタ株式会社 | 半導体装置 |
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GB570026A (en) * | 1943-12-14 | 1945-06-19 | Johnson Matthey Co Ltd | Improvements in or relating to the manufacture and production of electrical resistors with a low inductance |
US3266005A (en) * | 1964-04-15 | 1966-08-09 | Western Electric Co | Apertured thin-film circuit components |
US3846345A (en) * | 1969-10-06 | 1974-11-05 | Owens Illinois Inc | Electroconductive paste composition and structures formed therefrom |
DE3125281A1 (de) * | 1981-06-26 | 1983-01-13 | Siemens AG, 1000 Berlin und 8000 München | Elektrische bauelementekombination, insbesondere r-c-kombination |
DE3336229A1 (de) | 1983-10-05 | 1985-04-25 | Resista Fabrik elektrischer Widerstände GmbH, 8300 Landshut | Verfahren zur wertjustierung von widerstaenden |
US4568908A (en) * | 1984-12-24 | 1986-02-04 | General Electric Company | Compact resistor assembly |
EP0211331A3 (en) * | 1985-08-02 | 1989-10-25 | Hitachi, Ltd. | Heat-sensitive recording head and method of manufacturing same |
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JPH02312203A (ja) * | 1989-05-26 | 1990-12-27 | Matsushita Electric Ind Co Ltd | 厚膜抵抗体のトリミング方法 |
EP0428907B1 (en) | 1989-10-26 | 1995-08-16 | Takeshi Ikeda | LC Noise filter |
JPH0833327B2 (ja) * | 1990-06-11 | 1996-03-29 | 株式会社村田製作所 | 温度センサ |
JPH05275958A (ja) * | 1992-03-25 | 1993-10-22 | Murata Mfg Co Ltd | ノイズフィルタ |
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JP3631341B2 (ja) * | 1996-10-18 | 2005-03-23 | Tdk株式会社 | 積層型複合機能素子およびその製造方法 |
GB9623460D0 (en) * | 1996-11-09 | 1997-01-08 | Oxley Dev Co Ltd | Electronic components incorporating capacitors |
JPH1116703A (ja) * | 1997-06-20 | 1999-01-22 | Shoei Chem Ind Co | 超低抵抗抵抗器 |
US5889445A (en) * | 1997-07-22 | 1999-03-30 | Avx Corporation | Multilayer ceramic RC device |
US6362723B1 (en) * | 1999-11-18 | 2002-03-26 | Murata Manufacturing Co., Ltd. | Chip thermistors |
DE10108662A1 (de) * | 2000-02-23 | 2001-08-30 | Tyco Electronics Amp Gmbh | Leiterbahn auf einem Substrat |
DE10064447C2 (de) | 2000-12-22 | 2003-01-02 | Epcos Ag | Elektrisches Vielschichtbauelement und Entstörschaltung mit dem Bauelement |
EP1223591A3 (en) * | 2001-01-11 | 2007-06-06 | Matsushita Electric Industrial Co., Ltd. | Multilayer electronic component and communication apparatus |
-
2001
- 2001-09-10 DE DE10144364A patent/DE10144364A1/de not_active Ceased
-
2002
- 2002-08-12 CN CNB028176863A patent/CN100490025C/zh not_active Expired - Fee Related
- 2002-08-12 AT AT02754524T patent/ATE352847T1/de not_active IP Right Cessation
- 2002-08-12 DE DE50209370T patent/DE50209370D1/de not_active Expired - Lifetime
- 2002-08-12 EP EP02754524A patent/EP1425762B1/de not_active Expired - Lifetime
- 2002-08-12 JP JP2003531482A patent/JP4095961B2/ja not_active Expired - Fee Related
- 2002-08-12 WO PCT/DE2002/002952 patent/WO2003028045A2/de active IP Right Grant
- 2002-08-12 US US10/488,518 patent/US7012501B2/en not_active Expired - Lifetime
- 2002-09-09 TW TW091120464A patent/TW569247B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP1425762B1 (de) | 2007-01-24 |
TW569247B (en) | 2004-01-01 |
US7012501B2 (en) | 2006-03-14 |
ATE352847T1 (de) | 2007-02-15 |
WO2003028045A2 (de) | 2003-04-03 |
DE50209370D1 (de) | 2007-03-15 |
JP2005504438A (ja) | 2005-02-10 |
CN100490025C (zh) | 2009-05-20 |
CN1554101A (zh) | 2004-12-08 |
WO2003028045A3 (de) | 2003-12-04 |
DE10144364A1 (de) | 2003-04-03 |
EP1425762A2 (de) | 2004-06-09 |
US20040239476A1 (en) | 2004-12-02 |
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