JP3994094B2 - Light emitting diode lamp - Google Patents
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- JP3994094B2 JP3994094B2 JP2004157221A JP2004157221A JP3994094B2 JP 3994094 B2 JP3994094 B2 JP 3994094B2 JP 2004157221 A JP2004157221 A JP 2004157221A JP 2004157221 A JP2004157221 A JP 2004157221A JP 3994094 B2 JP3994094 B2 JP 3994094B2
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- 229920003002 synthetic resin Polymers 0.000 claims abstract description 53
- 239000000057 synthetic resin Substances 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 239000000843 powder Substances 0.000 claims abstract description 22
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 239000012212 insulator Substances 0.000 claims description 8
- 238000001579 optical reflectometry Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000004789 Rosa xanthina Nutrition 0.000 description 1
- 241000109329 Rosa xanthina Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
Description
本発明は，金属製リード端子の先端に凹み形成したカップ部の内底面に発光ダイオードチップをダイボンディングし，前記リード端子における先端の部分を透明合成樹脂にてパッケージするか，前記カップ部内に透明合成樹脂を充填して成る発光ダイオードランプに関するものである。 According to the present invention, a light emitting diode chip is die-bonded to the inner bottom surface of a cup portion that is recessed at the tip of a metal lead terminal, and the tip portion of the lead terminal is packaged with a transparent synthetic resin, or transparent in the cup portion. The present invention relates to a light emitting diode lamp filled with a synthetic resin.
最近，例えば，ＧａＮ系で青色を発光する発光ダイオードチップが開発され，この青色発光の発光ダイオードチップは，高い輝度を呈することが良く知られている。 Recently, for example, a GaN-based light emitting diode chip that emits blue light has been developed, and it is well known that this blue light emitting diode chip exhibits high luminance.
また，最近においては，前記青色発光の発光ダイオードチップが高い輝度を有することを利用して，この発光ダイオードチップの表面を，螢光物質の粉末を含む光透過性合成樹脂にて被覆し，前記青色発光の波長を前記被膜中の螢光物質にて一部黄色に変換し，これらの混色によって，高い輝度の白色発光に色調変換することが行われている。 In recent years, the surface of the light-emitting diode chip is coated with a light-transmitting synthetic resin containing a fluorescent substance powder by utilizing the fact that the blue light-emitting light-emitting diode chip has high luminance. The wavelength of blue light emission is partly converted to yellow by the fluorescent substance in the coating, and the color tone is converted to high luminance white light emission by mixing these colors.
そこで，先行技術としての特許文献１における図５には，二本の金属製リード端子のうち一方のリード端子の先端に，内周面を光の反射面にしたカップ部を凹み形成し，このカップ部の内底面に青色発光の発光ダイオードチップをダイボンディングし，この発光ダイオードチップと他方のリード端子との間を細い金属線にて接続する一方，両リード端子の先端の部分を透明合成樹脂体にてパッケージして成る発光ダイオードランプにおいて，前記カップ部内に，予め，螢光物質の粉末を含む光透過性合成樹脂を，前記発光ダイオードチップの全体を埋没するように充填することによって，白色発光に色調変換することが提案されている。 Therefore, in FIG. 5 in Patent Document 1 as the prior art, a cup portion having an inner peripheral surface as a light reflecting surface is formed in a dent at the tip of one of the two metal lead terminals. A blue light emitting diode chip is die-bonded to the inner bottom surface of the cup, and the light emitting diode chip and the other lead terminal are connected by a thin metal wire, while the tip of both lead terminals is transparent synthetic resin In a light emitting diode lamp packaged with a body, the cup portion is previously filled with a light-transmitting synthetic resin containing a fluorescent substance powder so as to bury the entire light emitting diode chip, thereby producing a white color. It has been proposed to convert the color to light emission.
また，従来における別の発光ダイオードランプにおいては，絶縁体の先端面に内周面を外向きに広がる形状に凹み形成したカップ部を設け，このカップ部の内面に光反射性を有する電極膜を形成し，前記カップ部の内底面に青色発光の発光ダイオードチップをダイボンディングしたのち，前記カップ部の内部に，螢光物質の粉末を含む光透過性合成樹脂を，前記発光ダイオードチップの全体を埋没するように充填することによって，白色発光に色調変換するように構成している。
しかし，前記した従来のものは，カップ部の内部に発光ダイオードチップをダイボンディングしたのち，前記カップ部の内部の全体に，螢光物質の粉末を含む光透過性合成樹脂を液体の状態で，前記発光ダイオードチップ埋没するように充填するという構成であって，前記発光ダイオードチップから出射された光は，前記カップ部内に充填された螢光物質の粉末を含む光透過性合成樹脂の内部を透過する過程で，波長の変換と，前記カップ部の
内面における光反射面によってカップ部から出て行く方向への方向変換とを行うものであり，換言すると，螢光物質が分散された光透過性合成樹脂の内部を，光反射面の前後における長い経路にわたって透過することにより，この光透過性合成樹脂を透過するときにおける光の減衰率が可成り大きいから，光の輝度がそれだけ低いという問題がある。
However, in the above-mentioned conventional one, after the light emitting diode chip is die-bonded inside the cup part, the light-transmitting synthetic resin containing the fluorescent substance powder is in the liquid state on the whole inside the cup part. The light emitting diode chip is filled so as to be buried, and light emitted from the light emitting diode chip is transmitted through a transparent synthetic resin containing a fluorescent substance powder filled in the cup portion. In this process, the wavelength conversion and the direction conversion in the direction of exiting from the cup part are performed by the light reflecting surface on the inner surface of the cup part. In other words, the light transmission property in which the fluorescent substance is dispersed is performed. By transmitting the inside of the synthetic resin over a long path before and after the light reflecting surface, the attenuation factor of light when passing through this light-transmitting synthetic resin is considerably large. Et al., The brightness of the light is a problem that much lower.
しかも，前記カップ部内への光透過性合成樹脂の充填に際しては，充填量の多い少ないのバラ付きが存在し，このバラ付きが，そのまま，螢光物質の量のバラ付きになり，ひいては，色調のバラ付きになって現れるという問題もあった。 In addition, when filling the cup portion with the light-transmitting synthetic resin, there is a small amount of variation with a large amount of filling, and this variation becomes a variation in the amount of the fluorescent substance as it is. there was also the problem that you have and appear become with roses.
本発明は，発光ダイオードチップから出射される光の色調を，螢光物質の粉末を含む光透過性合成樹脂にて変えるようにした発光ダイオードランプにおいて，前記のような問題を招来することがないようにすることを技術的課題とするものである。 The present invention does not cause the above-mentioned problems in a light-emitting diode lamp in which the color tone of light emitted from a light-emitting diode chip is changed with a light-transmitting synthetic resin containing a fluorescent substance powder. This is a technical issue.
この技術的課題を達成するため本発明の請求項１は，
「少なくとも，二本の一対のリード端子と，一方のリード端子の先端に内周面を外向きに広がる形状の光反射面とするように凹み形成したカップ部と，発光ダイオードチップと，前記両リード端子における先端の部分をパッケージする透明合成樹脂体，或いは，前記カップ部内に前記発光ダイオードチップをパッケージするように充填した透明合成樹脂体とから成る発光ダイオードランプにおいて，
前記発光ダイオードチップを，透明なｎ型半導体基板の上面にｎ電極を形成する一方，前記ｎ型半導体基板の下面に青色発光層，ｐ型半導体層及びｐ電極を形成して成る積層構造にし，この発光ダイオードチップの周囲における各側面のうち前記ｎ型半導体基板の部分に，前記青色発光層に隣接する部分から前記ｎ電極に向かって内向きにした傾斜面を設け，更に，前記発光ダイオードチップを，その周囲における各側面を螢光物質の粉末を含む光透過性合成樹脂にて被覆して直方体に構成して，前記カップ部の内部に，当該発光ダイオードチップにおけるｐ電極を下向きにｎ電極を上向きにして配設し，その下向きのｐ電極を前記カップ部の内底面に電気的に接続するようにダイボンディングする。」
ことを特徴としている。
In order to achieve this technical problem, claim 1 of the present invention provides:
“At least two pairs of lead terminals, a cup portion that is recessed to form a light reflecting surface with an inner peripheral surface extending outward at the tip of one lead terminal, the light emitting diode chip , In a light emitting diode lamp comprising a transparent synthetic resin body that packages a tip portion of a lead terminal, or a transparent synthetic resin body that is filled so as to package the light emitting diode chip in the cup portion,
The light emitting diode chip has a laminated structure in which an n electrode is formed on an upper surface of a transparent n type semiconductor substrate, and a blue light emitting layer, a p type semiconductor layer and a p electrode are formed on the lower surface of the n type semiconductor substrate , the portion of the n-type semiconductor substrate of each side at the periphery of the light emitting diode chip is provided with a inclined surface inwardly from a portion adjacent to the blue light-emitting layer toward the n-electrode, further, the light emitting diode chips Is formed into a rectangular parallelepiped by covering each side surface with a light-transmitting synthetic resin containing a fluorescent substance powder, and a p-electrode in the light-emitting diode chip is n-electrode facing down inside the cup portion. the facing up disposed, is die-bonded to be electrically connected to p electrode of its downward on the inner bottom surface of the cup portion. "
It is characterized by that.
また，本発明の請求項２は，
「少なくとも，絶縁体と，この絶縁体に内周面を外向きに広がる形状にして凹み形成したカップ部と，前記カップ部の内面に光反射性を有するように形成した電極膜と，発光ダイオードチップと，前記カップ部内に前記発光ダイオードチップをパッケージするように充填した透明合成樹脂体とから成る発光ダイオードランプにおいて，
前記発光ダイオードチップを，透明なｎ型半導体基板の上面にｎ電極を形成する一方，前記ｎ型半導体基板の下面に青色発光層，ｐ型半導体層及びｐ電極を形成して成る積層構造にし，この発光ダイオードチップの周囲における各側面のうち前記ｎ型半導体基板の部分に，前記青色発光層に隣接する部分から前記ｎ電極に向かって内向きにした傾斜面を設け，更に，前記発光ダイオードチップを，その周囲における各側面を螢光物質の粉末を含む光透過性合成樹脂にて被覆して直方体に構成して，前記カップ部の内部に，当該発光ダイオードチップにおけるｐ電極を下向きにｎ電極を上向きにして配設し，その下向きのｐ電極を前記カップ部の内底面における電極膜に接続するようにダイボンディングする。」ことを特徴としている。
Further, claim 2 of the present invention is
“At least an insulator, a cup portion formed in a concave shape with an inner peripheral surface extending outwardly in the insulator, an electrode film formed on the inner surface of the cup portion so as to have light reflectivity, and a light emitting diode In a light emitting diode lamp comprising a chip and a transparent synthetic resin body filled so as to package the light emitting diode chip in the cup portion,
The light emitting diode chip has a laminated structure in which an n electrode is formed on an upper surface of a transparent n type semiconductor substrate, and a blue light emitting layer, a p type semiconductor layer and a p electrode are formed on the lower surface of the n type semiconductor substrate , the portion of the n-type semiconductor substrate of each side at the periphery of the light emitting diode chip is provided with a inclined surface inwardly from a portion adjacent to the blue light-emitting layer toward the n-electrode, further, the light emitting diode chips Is formed into a rectangular parallelepiped by covering each side surface with a light-transmitting synthetic resin containing a fluorescent substance powder, and a p-electrode in the light-emitting diode chip is n-electrode facing down inside the cup portion. the facing up disposed, is die-bonded to connect the p-electrode of the downward electrode film on the inner bottom surface of the cup portion. ".
更にまた，本発明の請求項３は，
「前記請求項１又は２の記載において，前記発光ダイオードチップにおける上向きのｎ電極に，螢光物質の粉末を含む光透過性合成樹脂を塗布する。」
ことを特徴としている。
Furthermore, claim 3 of the present invention provides
“In the first or second aspect of the present invention, a light-transmitting synthetic resin containing a fluorescent substance powder is applied to the upward n electrode of the light-emitting diode chip.”
It is characterized by that.
発光ダイオードチップを，透明なｎ型半導体基板の上面にｎ電極を形成する一方前記ｎ型半導体基板の下面に青色発光層，ｐ型半導体層及びｐ電極を形成して成る積層構造の直方体にし，この発光ダイオードチップの周囲における各側面のうち前記ｎ型半導体基板の部分に，前記青色発光層に隣接する部分から前記ｎ電極に向かって内向きにした傾斜面を設け，更に，前記発光ダイオードチップの周囲における各側面を，螢光物質の粉末を含む光透過性合成樹脂にて被覆して直方体に構成することにより，前記発光ダイオードチップのうち青色発光層で発光する光は，主として，前記透明なｎ型半導体基板の周囲における各側面より，当該各側面を被覆する光透過性合成樹脂を透過して，横向きに出射される。 A light emitting diode chip is formed in a rectangular parallelepiped structure in which an n electrode is formed on an upper surface of a transparent n type semiconductor substrate and a blue light emitting layer, a p type semiconductor layer and a p electrode are formed on the lower surface of the n type semiconductor substrate ; Of each side surface around the light-emitting diode chip, an inclined surface is provided on the n-type semiconductor substrate in an inward direction from a portion adjacent to the blue light-emitting layer toward the n-electrode. Each side surface of the light emitting diode chip is covered with a light-transmitting synthetic resin containing a fluorescent substance powder to form a rectangular parallelepiped so that light emitted from the blue light emitting layer of the light emitting diode chip is mainly transparent. From each side surface around the n-type semiconductor substrate, the light-transmitting synthetic resin covering each side surface is transmitted and emitted sideways.
そこで，前記したように周囲の各側面を螢光物質の粉末を含む光透過性合成樹脂にて被覆して直方体に構成にして成る発光ダイオードチップを，そのｐ電極を下向きにｎ電極を上向きにして，リード端子又は絶縁体に凹み形成したカップ部の内部に配設して，その下向きのｐ電極を前記カップ部の内底面，又は内底面における電極膜に電気的に接続するようにダイボンディングすることにより，側面の光透過性合成樹脂を透過して横向きに出射される光は，前記光透過性合成樹脂を透過するときにおいて波長が変換され，この波長が変換された後の光が，前記カップ部の内周面における光反射面にてカップ部内から出て行く方向に反射されることになる。 Therefore, as described above , a light emitting diode chip having a rectangular parallelepiped structure in which each side surface is coated with a light-transmitting synthetic resin containing a fluorescent substance powder , with the p electrode facing downward and the n electrode facing upward. Die bonding so that the p-electrode facing downward is electrically connected to the inner bottom surface of the cup portion or the electrode film on the inner bottom surface. By doing so, the light transmitted through the light-transmitting synthetic resin on the side surface and emitted laterally is converted in wavelength when passing through the light-transmitting synthetic resin, and the light after this wavelength conversion is The light is reflected in the direction of exiting from the cup portion by the light reflecting surface on the inner peripheral surface of the cup portion.
つまり，先行技術のように，螢光物質の粉末を含む光透過性合成樹脂の内部を透過する途中で，波長の変換と光の反射とを行うのではなく，最初に，螢光物質の粉末を含む光透過性合成樹脂にて波長を変換し，この波長を変換した後において，光の反射を行うものであることにより，光の減衰率を，前記先行技術の場合によりも大幅に低減できるから，発光ダイオードランプとしての光の輝度を著しく向上できるのである。 That is, instead of performing wavelength conversion and light reflection in the middle of passing through the inside of the light-transmitting synthetic resin containing the fluorescent substance powder as in the prior art, first, the fluorescent substance powder is used. By converting the wavelength with a light-transmitting synthetic resin containing, and reflecting the light after this wavelength conversion, the light attenuation rate can be greatly reduced compared to the prior art. Therefore, the luminance of light as a light emitting diode lamp can be remarkably improved.
しかも，前記カップ部の内部における全体に螢光物質の粉末を含む光透過性合成樹脂を充填するという構成でないことにより，前記螢光物質の粉末を含む光透過性合成樹脂にて波長を変換した色調のバラ付きを，前記先行技術の場合によりも僅少にとどめることができるのである。 In addition, the wavelength is converted by the light-transmitting synthetic resin containing the fluorescent substance powder because the entire inside of the cup portion is not filled with the light-transmitting synthetic resin containing the fluorescent substance powder. The variation in color tone can be kept to a minimum as compared with the prior art.
この場合において，請求項３に記載した構成にすることにより，発光ダイオードチップにおける上向きのｎ電極から漏れ出る光を，当該上向きのｎ電極に対して塗布した螢光物質の粉末を含む光透過性合成樹脂にて，発光ダイオードチップにおける側面における光透過性合成樹脂と同様の色調に変換できることができるし，また，螢光物質の粉末を含む光透過性合成樹脂を，発光ダイオードチップにおける側面と，上面とに形成することにより，色度の微妙な調整が可能になる。 In this case, by adopting the configuration described in claim 3, light leaking from the upward n-electrode in the light-emitting diode chip is transmitted through the phosphor material powder applied to the upward n-electrode. The synthetic resin can be converted into a color tone similar to that of the light-transmitting synthetic resin on the side surface of the light-emitting diode chip, and the light-transmitting synthetic resin containing the fluorescent substance powder is changed to By forming on the top surface, it is possible to finely adjust the chromaticity.
以下，本発明の実施の形態を，図面について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
図１は，第１の実施の形態による発光ダイオードランプ１を示す。 FIG. 1 shows a light-emitting diode lamp 1 according to a first embodiment.
この発光ダイオードランプ１は，金属板製の二本一対のリード端子２，３と，この両リード端子２，３のうち一方のリード端子２の先端面にダイボンディングした発光ダイオードチップ４と，この発光ダイオードチップ４と前記他方のリード端子３との間をワイヤボンディングした金属線５と，前記両リード端子２，３における先端の部分をパッケージする透明合成樹脂製のモールド部６とから成っている。 The light-emitting diode lamp 1 includes a pair of lead terminals 2 and 3 made of metal plates, a light-emitting diode chip 4 die-bonded to the leading end surface of one of the lead terminals 2 and 3, It consists of a metal wire 5 wire-bonded between the light-emitting diode chip 4 and the other lead terminal 3, and a molded portion 6 made of transparent synthetic resin for packaging the tip portion of the lead terminals 2 and 3. .
なお，前記モールド部６の先端は，前記発光ダイオードチップ４の箇所又はその近傍に焦点を有するレンズ部７に形成されている。 The tip of the mold part 6 is formed on a lens part 7 having a focal point at or near the light emitting diode chip 4.
また，前記一方の先端のうち前記発光ダイオードチップ４がダイボンディングされる部分には，カップ部８が凹み形成され，このカップ部８における内周面は，円錐形の光反射面９に形成されている。 Further, a cup portion 8 is formed in a recessed portion at the portion where the light emitting diode chip 4 is die-bonded at the one end, and an inner peripheral surface of the cup portion 8 is formed as a conical light reflecting surface 9. ing.
この場合において，前記両リード端子２，３が，光の反射性を有しない金属製であるときには，前記両リード端子２，３における表面のうち少なくとも前記カップ部８の内面には，光を反射する金属によるメッキ，例えば，銀メッキが施されている。 In this case, when both the lead terminals 2 and 3 are made of metal having no light reflectivity, light is reflected on at least the inner surface of the cup portion 8 among the surfaces of the lead terminals 2 and 3. Plating with metal to be used, for example, silver plating is applied.
次に，図２及び図３は，前記発光ダイオードチップ４の詳細を示す。 2 and 3 show details of the light-emitting diode chip 4. FIG.
この発光ダイオードチップ４は，ｎ型ＳｉＣ結晶基板等の透明な厚さの厚いｎ型半導体基板４ａの下面に，ｐ型半導体層４ｂをその間に青色発光の発光層４ｃを挟んで積層形成する一方，前記ｎ型半導体基板４ａの上面にｎ電極４ｄを，前記ｐ型半導体層４ｂの下面にｐ電極４ｅを各々形成して成る積層構造，つまり，透明なｎ型半導体基板４ａの上面にｎ電極４ｄを形成する一方，前記ｎ型半導体基板４ａの下面に青色発光層４ｃ，ｐ型半導体層４ｂ及びｐ電極４ｅを形成して成る積層構造の構成である。 The light-emitting diode chip 4 is formed by laminating a p-type semiconductor layer 4b on a lower surface of a thick n-type semiconductor substrate 4a such as an n-type SiC crystal substrate with a blue light-emitting layer 4c interposed therebetween. , A stacked structure in which an n-electrode 4d is formed on the upper surface of the n-type semiconductor substrate 4a and a p-electrode 4e is formed on the lower surface of the p-type semiconductor layer 4b, that is, an n-electrode is formed on the upper surface of the transparent n-type semiconductor substrate 4a. while forming 4d, the configuration of the n-type lower surface to the blue light-emitting layer 4c of the semiconductor substrate 4a, p-type semiconductor layer 4b and the p-electrode 4e formed is composed of a laminated structure.
しかも，この発光ダイオードチップ４の周囲における各側面のうち前記ｎ型半導体基板４ａの部分には，その上部における横幅寸法Ｗ１を下部における横幅寸法Ｗ２よりも小さくするように，前記青色発光層４ｃに隣接する部分から前記ｎ電極４ｄに向かって内向きにした傾斜面４′が形成されている。 Moreover, the blue light emitting layer 4c is formed on the n-type semiconductor substrate 4a portion of each side surface around the light emitting diode chip 4 so that the width W1 at the upper portion is smaller than the width W2 at the lower portion. An inclined surface 4 'is formed inwardly from the adjacent portion toward the n-electrode 4d.
更に，前記発光ダイオードチップ４を，その周囲における各側面を青色発光を白色発光に色調変換するようにした螢光物質を粉末の状態で含む光透過性合成樹脂１０にて被覆して成る直方体に構成する。 Further, the light emitting diode chip 4 is formed into a rectangular parallelepiped formed by coating each side surface around the light emitting diode chip 4 with a light-transmitting synthetic resin 10 containing a fluorescent substance that changes the color of blue light emission to white light emission. Constitute.
そして，前記発光ダイオードチップ４を，その周囲における各側面を光透過性合成樹脂１０にて被覆して成る構成にして，前記一方のリード端子２におけるカップ部８内に，そのｐ電極４ｅを下向きにｎ電極４ｄを上向きにして配設し，前記ｐ電極４ｅがカップ部８の内底面に対して電気的に導通するように導電性ペースト又は半田にてダイボンディングし，次いで，前記発光ダイオードチップ４における上向きのｎ電極４ｄに対して，他方のリード端子３からの金属線５を接続する。 The light emitting diode chip 4 is constructed by covering each side surface of the light emitting diode chip 4 with a light-transmitting synthetic resin 10 , and the p electrode 4e faces downward in the cup portion 8 of the one lead terminal 2. n electrodes 4d facing up disposed, the p electrode 4e is die-bonded by conductive paste or solder so as to be electrically conductive with respect to the inner bottom surface of the cup portion 8, then the light emitting diode chips 4 is connected to the metal wire 5 from the other lead terminal 3.
そして，最後に，前記両リード端子２，３の先端の部分を，先端にレンズ部を有する透明合成樹脂体６にて，両リード端子２，３の一部が当該透明合成樹脂体６の下面から下向きに突出するようにパッケージする。 Finally, the tip portions of the lead terminals 2 and 3 are made of a transparent synthetic resin body 6 having a lens portion at the tip, and a part of the lead terminals 2 and 3 is a lower surface of the transparent synthetic resin body 6. Package so that it protrudes downward.
この構成において，両リード端子２，３の間に通電することによる前記発光ダイオードチップ４の発光層４ｃでの青色発光は，主として，前記発光ダイオードチップ４の周囲における各側面のうち透明なｎ型半導体基板４ａの部分からカップ部８の内周面における光反射面９に向かって横向きに出射されるときにおいて，前記各側面を被覆する光透過性合成樹脂１０を透過することにより，この光透過性合成樹脂１０に含まれている螢光物質にて，白色発光に色調変換され，次いで，前記光反射面９にて，前記カップ部８内から出て行く方向に反射される。 In this configuration, the blue light emission in the light emitting layer 4 c of the light emitting diode chip 4 by energizing between the lead terminals 2 and 3 is mainly a transparent n-type of each side surface around the light emitting diode chip 4. When light is emitted laterally from the portion of the semiconductor substrate 4a toward the light reflecting surface 9 on the inner peripheral surface of the cup portion 8, the light transmitting light is transmitted by passing through the light transmitting synthetic resin 10 covering the side surfaces. The fluorescent substance contained in the synthetic resin 10 is converted into white light emission, and then reflected by the light reflecting surface 9 in the direction of exiting from the cup portion 8.
この場合において，前記発光ダイオードチップ４の発光層４ｃでの青色発光のうち一部は，上面におけるｎ電極４ｄから上向きに出射されることになるが，この場合には，この上面におけるｎ電極４ｄを，図４に示す第２の実施の形態による発光ダイオードランプ１１のように，前記ワイヤボンディングによる金属線５を接続したあとにおいて，同じく，螢光物質を粉末の状態で含む光透過性合成樹脂１２に被覆することにより，前記発光ダイオードチップ４の発光層４ｃでの青色発光の総てを白色発光に色調変換することができる。 In this case, a part of blue light emission in the light emitting layer 4c of the light emitting diode chip 4 is emitted upward from the n electrode 4d on the upper surface. In this case, the n electrode 4d on this upper surface is emitted. 4 is a light-transmitting synthetic resin containing a fluorescent substance in the form of powder after the metal wire 5 is connected by the wire bonding as in the light-emitting diode lamp 11 according to the second embodiment shown in FIG. 12, all the blue light emission in the light emitting layer 4c of the light emitting diode chip 4 can be color-converted to white light emission.
次に，図５及び図６は，第３の実施の形態による発光ダイオードランプ４１を示す。 Next, FIG.5 and FIG.6 shows the light emitting diode lamp 41 by 3rd Embodiment.
この発光ダイオードランプ４１は，金属板製の二本一対のリード端子２′，３′のうち一方のリード端子２′の先端面に，カップ部８′を，その内周面が外向きに広がる光反射面９とするように凹み形成し，このカップ部８′の内部に，前記図２及び図３に示す構造にした発光ダイオードチップ４を，そのｐ電極４ｅを下向きにｎ電極４ｄを上向きにして供給して，前記ｐ電極４ｅがカップ部８′の内底面に対して電気的に導通するように導電性ペースト又は半田にてダイボンディングし，次いで，前記発光ダイオードチップ４における上向きのｎ電極４ｄに対して，他方のリード端子３′からの金属線５′を接続するという構成にしている。 This light-emitting diode lamp 41 has a cup portion 8 'at its tip end surface of one pair of lead terminals 2', 3 'made of a metal plate and its inner peripheral surface extending outward. A light-emitting diode chip 4 having a structure shown in FIGS. 2 and 3 is formed inside the cup portion 8 'so as to form a light reflecting surface 9. The p-electrode 4e faces downward and the n-electrode 4d faces upward. The p electrode 4e is die-bonded with a conductive paste or solder so that the p electrode 4e is electrically connected to the inner bottom surface of the cup portion 8 '. The metal wire 5 'from the other lead terminal 3' is connected to the electrode 4d.
そして，最後に，前記両リード端子２′，３′の全体を，板状にした透明合成樹脂体６′にて，両リード端子２′，３′における一部が当該透明合成樹脂体６′における一つの表面６ａ′に接続用端子２ａ′，３ａ′として露出するようにパッケージするという構成にしたものである。 Finally, the entire lead terminals 2 'and 3' are made into a plate-like transparent synthetic resin body 6 ', and a part of both lead terminals 2' and 3 'is the transparent synthetic resin body 6'. In this case, the package is formed so as to be exposed as connection terminals 2a 'and 3a' on one surface 6a '.
このように構成することにより，前記した各実施の形態と同様の効果を得ることができることに加えて，全体が板状体で，且つ，この板状体における一つの表面に半田付けするための接続用端子２ａ′，３ａ′を備えた形態であることにより，面実装型の発光ダイオードランプ４１に構成することができる。 With this configuration, in addition to being able to obtain the same effects as those of the above-described embodiments, the whole is a plate-like body and for soldering to one surface of the plate-like body. Since the connection terminals 2a ′ and 3a ′ are provided, a surface-mounted light-emitting diode lamp 41 can be configured.
次に，図７及び図８は，第４の実施の形態による発光ダイオードランプ５１を示す。 Next, FIG.7 and FIG.8 shows the light emitting diode lamp 51 by 4th Embodiment.
この発光ダイオードランプ５１は，板状にした絶縁体５２の先端面に，内周面を外向きに広がる形状にしたカップ部８″を凹み形成して，このカップ部８″の内面に，銀等の金属にて光反射性を有する電極膜２″を形成し，前記カップ部８″の内部に，前記図２及び図３に示す構造にした発光ダイオードチップ４を，そのｐ電極４ｅを下向きにｎ電極４ｄを上向きにして供給して，前記ｐ電極４ｅがカップ部８″内の電極膜２″に対して電気的に導通するように導電性ペースト又は半田にてダイボンディングし，次いで，前記発光ダイオードチップ４における上向きのｎ電極４ｄに対して，前記絶縁体５２の表面に形成した他方の電極膜３″からの金属線５″を接続する。 The light-emitting diode lamp 51 has a cup portion 8 ″ having a shape in which an inner peripheral surface extends outwardly on a tip surface of a plate-like insulator 52, and a silver portion is formed on the inner surface of the cup portion 8 ″. An electrode film 2 ″ having light reflectivity is formed of a metal such as the above, and the light emitting diode chip 4 having the structure shown in FIGS. 2 and 3 is placed inside the cup portion 8 ″ with the p electrode 4e facing downward. N-electrode 4d is supplied upward, and the p-electrode 4e is die-bonded with a conductive paste or solder so that the p-electrode 4e is electrically connected to the electrode film 2 "in the cup portion 8". A metal wire 5 ″ from the other electrode film 3 ″ formed on the surface of the insulator 52 is connected to the upward n electrode 4 d in the light emitting diode chip 4.
そして，最後に，前記カップ部８″の内部に，透明合成樹脂体６″を，当該透明合成樹脂体６″にて前記発光ダイオードチップ４及び前記金属線５″をパッケージするように充填するという構成にしたものである。 Finally, the inside of the cup portion 8 ″ is filled with a transparent synthetic resin body 6 ″ so that the light emitting diode chip 4 and the metal wire 5 ″ are packaged with the transparent synthetic resin body 6 ″. It is a configuration.
このように構成することにより，前記した各実施の形態と同様の効果を得ることができることに加えて，全体が薄型の板状体で，且つ，金属製のリード端子を使用しない，従って，軽量の面実装型の発光ダイオードランプ５１に構成できる。 With this configuration, in addition to obtaining the same effects as those of the above-described embodiments, the whole is a thin plate-like body and does not use a metal lead terminal. The surface mount type light emitting diode lamp 51 can be configured.
なお，これら第３の実施の形態及び第４の実施の形態のいずれも，前記カップ部８′，８″を，横に長い長方形にすることにより，液晶表示装置等におけるバックライト光源として使用できるように構成しているが，これら第２の実施の形態及び第３の実施の形態のいずれにも，前記図４に示す第２の実施の形態を適用できることはいうまでもない。 Note that both the third embodiment and the fourth embodiment can be used as a backlight light source in a liquid crystal display device or the like by making the cup portions 8 ', 8''into a horizontally long rectangle. Although it is configured as described above, it goes without saying that the second embodiment shown in FIG. 4 can be applied to both the second embodiment and the third embodiment.
１，１１，２１，３１，４１，５１ 発光ダイオードランプ
２，２′ 一方のリード端子
３，３′ 他方のリード端子
２″ 一方の電極膜
３″ 他方の電極膜
４ 発光ダイオードチップ
４′ 傾斜面
４ａ ｎ型半導体基板
４ｂ ｐ型半導体層
４ｃ 発光層
４ｄ ｎ電極
４ｅ ｐ電極
５，５′，５″ 金属線
６，６′，６″ 透明合成樹脂体
８，８′，８″ カップ部
９ 光反射面
１０ 光透過性合成樹脂
１２，３２ 光透過性合成樹脂
５２ 絶縁体
1, 11, 21, 31, 41, 51 Light-emitting diode lamp 2, 2 'One lead terminal 3, 3' The other lead terminal 2 "One electrode film 3" The other electrode film 4 Light-emitting diode chip 4 'Inclined surface 4a n-type semiconductor substrate 4b p-type semiconductor layer 4c light-emitting layer 4d n-electrode 4e p-electrode 5, 5 ', 5 "metal wire 6, 6', 6" transparent synthetic resin body 8, 8 ', 8 "cup portion 9 light Reflective surface 10 Light transmissive synthetic resin 12, 32 Light transmissive synthetic resin 52 Insulator
Claims (3)
前記発光ダイオードチップを，透明なｎ型半導体基板の上面にｎ電極を形成する一方，前記ｎ型半導体基板の下面に青色発光層，ｐ型半導体層及びｐ電極を形成して成る積層構造にし，この発光ダイオードチップの周囲における各側面のうち前記ｎ型半導体基板の部分に，前記青色発光層に隣接する部分から前記ｎ電極に向かって内向きにした傾斜面を設け，更に，前記発光ダイオードチップを，その周囲における各側面を螢光物質の粉末を含む光透過性合成樹脂にて被覆して直方体に構成して，前記カップ部の内部に，当該発光ダイオードチップにおけるｐ電極を下向きにｎ電極を上向きにして配設し，その下向きのｐ電極を前記カップ部の内底面に電気的に接続するようにダイボンディングすることを特徴とする発光ダイオードランプ。 At least two pairs of lead terminals, a cup portion that has a recess formed at the tip of one lead terminal so that the inner peripheral surface is shaped to spread outward, a light- emitting diode chip, and both the leads In a light-emitting diode lamp comprising a transparent synthetic resin body that packages a tip portion of a terminal, or a transparent synthetic resin body that is filled so as to package the light-emitting diode chip in the cup portion,
The light emitting diode chip has a laminated structure in which an n electrode is formed on an upper surface of a transparent n type semiconductor substrate, and a blue light emitting layer, a p type semiconductor layer and a p electrode are formed on the lower surface of the n type semiconductor substrate , the portion of the n-type semiconductor substrate of each side at the periphery of the light emitting diode chip is provided with a inclined surface inwardly from a portion adjacent to the blue light-emitting layer toward the n-electrode, further, the light emitting diode chips Is formed into a rectangular parallelepiped by covering each side surface with a light-transmitting synthetic resin containing a fluorescent substance powder, and a p-electrode in the light-emitting diode chip is n-electrode facing down inside the cup portion. LED lamp in facing up arranged, characterized in that die-bonding to connect the p-electrode of the downwardly electrically to the inner bottom surface of the cup portion.
前記発光ダイオードチップを，透明なｎ型半導体基板の上面にｎ電極を形成する一方，前記ｎ型半導体基板の下面に青色発光層，ｐ型半導体層及びｐ電極を形成して成る積層構造にし，この発光ダイオードチップの周囲における各側面のうち前記ｎ型半導体基板の部分に，前記青色発光層に隣接する部分から前記ｎ電極に向かって内向きにした傾斜面を設け，更に，前記発光ダイオードチップを，その周囲における各側面を螢光物質の粉末を含む光透過性合成樹脂にて被覆して直方体に構成して，前記カップ部の内部に，当該発光ダイオードチップにおけるｐ電極を下向きにｎ電極を上向きにして配設し，その下向きのｐ電極を前記カップ部の内底面における電極膜に接続するようにダイボンディングすることを特徴とする発光ダイオードランプ。 At least an insulator, a cup portion formed in a concave shape with an inner peripheral surface extending outwardly in the insulator, an electrode film formed on the inner surface of the cup portion so as to have light reflectivity, and a light emitting diode chip And a light-emitting diode lamp comprising a transparent synthetic resin body filled so as to package the light-emitting diode chip in the cup portion,
The light emitting diode chip has a laminated structure in which an n electrode is formed on an upper surface of a transparent n type semiconductor substrate, and a blue light emitting layer, a p type semiconductor layer and a p electrode are formed on the lower surface of the n type semiconductor substrate , the portion of the n-type semiconductor substrate of each side at the periphery of the light emitting diode chip is provided with a inclined surface inwardly from a portion adjacent to the blue light-emitting layer toward the n-electrode, further, the light emitting diode chips Is formed into a rectangular parallelepiped by covering each side surface with a light-transmitting synthetic resin containing a fluorescent substance powder, and a p-electrode in the light-emitting diode chip is n-electrode facing down inside the cup portion. facing up and arranged, characterized in that die-bonding to connect the p-electrode of the downward electrode film on the inner bottom surface of the cup portion emitting diode la Flop.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004157221A JP3994094B2 (en) | 2004-05-27 | 2004-05-27 | Light emitting diode lamp |
| US11/597,493 US7772597B2 (en) | 2004-05-27 | 2005-04-20 | Light emitting diode lamp |
| KR1020057019171A KR20070025899A (en) | 2004-05-27 | 2005-04-20 | Light emitting diode lamp |
| CNB2005800005714A CN100466309C (en) | 2004-05-27 | 2005-04-20 | Light emitting diode lamp |
| EP05734311A EP1791188A1 (en) | 2004-05-27 | 2005-04-20 | Light emitting diode lamp |
| PCT/JP2005/007522 WO2005117148A1 (en) | 2004-05-27 | 2005-04-20 | Light emitting diode lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004157221A JP3994094B2 (en) | 2004-05-27 | 2004-05-27 | Light emitting diode lamp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005340494A JP2005340494A (en) | 2005-12-08 |
| JP3994094B2 true JP3994094B2 (en) | 2007-10-17 |
Family
ID=35451166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004157221A Expired - Fee Related JP3994094B2 (en) | 2004-05-27 | 2004-05-27 | Light emitting diode lamp |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7772597B2 (en) |
| EP (1) | EP1791188A1 (en) |
| JP (1) | JP3994094B2 (en) |
| KR (1) | KR20070025899A (en) |
| CN (1) | CN100466309C (en) |
| WO (1) | WO2005117148A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007077869A1 (en) * | 2006-01-04 | 2007-07-12 | Rohm Co., Ltd. | Thin-type light emitting diode lamp, and its manufacturing |
| TW201448263A (en) | 2006-12-11 | 2014-12-16 | Univ California | Transparent light emitting diodes |
| TWI463708B (en) * | 2009-02-24 | 2014-12-01 | Advanced Optoelectronic Tech | Side-emitting type semiconductor light emitting device package and manufacturing process thereof |
| JP5496570B2 (en) * | 2009-08-05 | 2014-05-21 | シャープ株式会社 | Light emitting device |
| US20120106126A1 (en) * | 2010-11-01 | 2012-05-03 | Seiko Epson Corporation | Wavelength conversion element, light source device, and projector |
| CN103137839B (en) * | 2013-02-19 | 2015-12-02 | 东南大学 | A kind of sheet type White-light LED package structure |
| JP6322828B2 (en) * | 2014-02-07 | 2018-05-16 | ローム株式会社 | Light emitting module and light emitting device |
| US10090448B2 (en) | 2014-02-07 | 2018-10-02 | Rohm Co., Ltd. | Light-emitting module, light-emitting device and method of making light-emitting module |
| CN109051280A (en) | 2018-06-15 | 2018-12-21 | 泉州梅洋塑胶五金制品有限公司 | A kind of novel seal packing container |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
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|---|---|---|---|---|
| CN85104012B (en) * | 1985-05-22 | 1987-12-02 | 复旦大学 | Semiconductor plane luminescence device with metal reflection cavity |
| JPH0291980A (en) * | 1988-09-29 | 1990-03-30 | Toshiba Lighting & Technol Corp | Solid-state light emitting element |
| KR100629544B1 (en) | 1996-06-26 | 2006-09-27 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | Light-emitting semiconductor component with luminescence conversion element |
| DE19727233A1 (en) * | 1997-06-26 | 1999-01-07 | Siemens Ag | Radiation-emitting optoelectronic component |
| JP3257455B2 (en) | 1997-07-17 | 2002-02-18 | 松下電器産業株式会社 | Light emitting device |
| US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| JP3707279B2 (en) * | 1998-03-02 | 2005-10-19 | 松下電器産業株式会社 | Semiconductor light emitting device |
| JP3348843B2 (en) * | 1999-02-25 | 2002-11-20 | 日亜化学工業株式会社 | Light emitting diode and dot matrix display using the same |
| JP4081985B2 (en) | 2001-03-02 | 2008-04-30 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
| JP4075321B2 (en) * | 2001-04-24 | 2008-04-16 | 日亜化学工業株式会社 | Integrated nitride semiconductor light emitting device |
| JP2002353518A (en) * | 2001-05-28 | 2002-12-06 | Nitto Denko Corp | Photosemiconductor device |
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| EP1437776B1 (en) | 2001-10-12 | 2011-09-21 | Nichia Corporation | Light emitting device and method for manufacture thereof |
| JP2003188422A (en) * | 2001-12-20 | 2003-07-04 | Alps Electric Co Ltd | Light emitter and its manufacturing method |
| JP2003218401A (en) * | 2002-01-18 | 2003-07-31 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device and its manufacturing method |
| JP2003258320A (en) * | 2002-02-28 | 2003-09-12 | Rohm Co Ltd | Light emitting diode lamp |
| CN2567782Y (en) * | 2002-03-18 | 2003-08-20 | 常耀辉 | High-brightness white-light diode white-light source |
| US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
-
2004
- 2004-05-27 JP JP2004157221A patent/JP3994094B2/en not_active Expired - Fee Related
-
2005
- 2005-04-20 EP EP05734311A patent/EP1791188A1/en not_active Withdrawn
- 2005-04-20 US US11/597,493 patent/US7772597B2/en active Active
- 2005-04-20 WO PCT/JP2005/007522 patent/WO2005117148A1/en active Application Filing
- 2005-04-20 CN CNB2005800005714A patent/CN100466309C/en not_active Expired - Fee Related
- 2005-04-20 KR KR1020057019171A patent/KR20070025899A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005340494A (en) | 2005-12-08 |
| US20070221934A1 (en) | 2007-09-27 |
| WO2005117148A1 (en) | 2005-12-08 |
| KR20070025899A (en) | 2007-03-08 |
| CN100466309C (en) | 2009-03-04 |
| EP1791188A1 (en) | 2007-05-30 |
| CN1820379A (en) | 2006-08-16 |
| US7772597B2 (en) | 2010-08-10 |
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