JP3990710B2 - レーザ加工方法 - Google Patents
レーザ加工方法 Download PDFInfo
- Publication number
- JP3990710B2 JP3990710B2 JP2006069929A JP2006069929A JP3990710B2 JP 3990710 B2 JP3990710 B2 JP 3990710B2 JP 2006069929 A JP2006069929 A JP 2006069929A JP 2006069929 A JP2006069929 A JP 2006069929A JP 3990710 B2 JP3990710 B2 JP 3990710B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- region
- cutting
- laser
- outer edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
(B)レーザ
光源:半導体レーザ励起Nd:YAGレーザ
波長:1064nm
レーザ光スポット断面積:3.14×10−8cm2
発振形態:Qスイッチパルス
繰り返し周波数:100kHz
パルス幅:30ns
出力:20μJ/パルス
レーザ光品質:TEM00
偏光特性:直線偏光
(C)集光用レンズ
倍率:50倍
N.A.:0.55
レーザ光波長に対する透過率:60パーセント
(D)半導体基板が載置される載置台の移動速度:100mm/秒
本発明に係る半導体基板の実施例1について、図10〜図13を参照して説明する。図10は実施例1に係る半導体基板1の斜視図であり、図11は図10に示す半導体基板1のXI−XI線に沿った断面図であり、図12は図10に示す半導体基板1のXII−XII線に沿った断面図であり、図13は図10に示す半導体基板1の表面に設けられたレーザマークの写真を表した図である。
本発明に係る半導体基板の実施例2について、図15〜図18を参照して説明する。実施例2に係る半導体基板1は、厚さ350μm、外径4インチの円板状のGaAsウェハであり、図15に示すように、半導体基板1の周縁部の一部が直線となるよう切り欠かれてOF15が形成されている。
本発明に係る半導体チップ、及び半導体デバイスの製造方法の実施例について、図19を参照して説明する。図19は、実施例に係る半導体チップ21の斜視図である。
Claims (3)
- 半導体基板の外縁に沿って外縁部を設定し、前記半導体基板の前記外縁部の内側部分のみに、切断ラインに沿って、前記半導体基板の厚さ方向の内部に集光点を合わせてレーザ光を照射して、
互いに略直交しかつそれぞれが複数の2方向の直線状の改質領域を、前記外縁部の内側部分のみでかつ厚さ方向の内部に形成することで、
格子状の前記改質領域について、それによって区画された矩形状の区画部の前記外縁部側の角部分において、一方向の改質領域は他方向の改質領域を超え、他方向の改質領域も一方向の改質領域を超えるように交差し、かつ、前記半導体基板の外縁に達することのないものとして形成する工程と、
その後、前記改質領域を起点として前記半導体基板を前記切断予定ラインに沿って切断する工程と、
を含むことを特徴とするレーザ加工方法。 - 前記改質領域は溶融処理領域であることを特徴とする請求項1に記載のレーザ加工方法。
- 前記切断する工程において、前記半導体基板に応力を印加することで、前記改質領域を切断の起点として前記半導体基板を前記切断予定ラインに沿って切断することを特徴とする請求項1又は2に記載のレーザ加工方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006069929A JP3990710B2 (ja) | 2002-03-12 | 2006-03-14 | レーザ加工方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002067348 | 2002-03-12 | ||
JP2006069929A JP3990710B2 (ja) | 2002-03-12 | 2006-03-14 | レーザ加工方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003574373A Division JP4509573B2 (ja) | 2002-03-12 | 2003-03-11 | 半導体基板、半導体チップ、及び半導体デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006175520A JP2006175520A (ja) | 2006-07-06 |
JP3990710B2 true JP3990710B2 (ja) | 2007-10-17 |
Family
ID=36730105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006069929A Expired - Lifetime JP3990710B2 (ja) | 2002-03-12 | 2006-03-14 | レーザ加工方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3990710B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5964580B2 (ja) * | 2011-12-26 | 2016-08-03 | 株式会社ディスコ | ウェーハの加工方法 |
JP2013152985A (ja) * | 2012-01-24 | 2013-08-08 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP6957187B2 (ja) * | 2017-04-18 | 2021-11-02 | 浜松ホトニクス株式会社 | チップの製造方法、及び、シリコンチップ |
-
2006
- 2006-03-14 JP JP2006069929A patent/JP3990710B2/ja not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US11219966B1 (en) | 2018-12-29 | 2022-01-11 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11826846B2 (en) | 2018-12-29 | 2023-11-28 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11901181B2 (en) | 2018-12-29 | 2024-02-13 | Wolfspeed, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US11911842B2 (en) | 2018-12-29 | 2024-02-27 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11034056B2 (en) | 2019-05-17 | 2021-06-15 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11654596B2 (en) | 2019-05-17 | 2023-05-23 | Wolfspeed, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
Also Published As
Publication number | Publication date |
---|---|
JP2006175520A (ja) | 2006-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4509573B2 (ja) | 半導体基板、半導体チップ、及び半導体デバイスの製造方法 | |
JP4606741B2 (ja) | 加工対象物切断方法 | |
JP4322881B2 (ja) | レーザ加工方法及びレーザ加工装置 | |
JP3762409B2 (ja) | 基板の分割方法 | |
JP3722731B2 (ja) | レーザ加工方法 | |
JP4837320B2 (ja) | 加工対象物切断方法 | |
JP4050534B2 (ja) | レーザ加工方法 | |
JP3761567B2 (ja) | レーザ加工方法 | |
JP3670267B2 (ja) | レーザ加工方法 | |
JP3761565B2 (ja) | レーザ加工方法 | |
JP4664140B2 (ja) | レーザ加工方法 | |
WO2004080643A1 (ja) | レーザ加工方法 | |
JP4659301B2 (ja) | レーザ加工方法 | |
JP4851060B2 (ja) | 半導体レーザ素子の製造方法 | |
JP3990710B2 (ja) | レーザ加工方法 | |
JP4167094B2 (ja) | レーザ加工方法 | |
JP4509720B2 (ja) | レーザ加工方法 | |
JP3867109B2 (ja) | レーザ加工方法 | |
JP3751970B2 (ja) | レーザ加工装置 | |
JP3990711B2 (ja) | レーザ加工装置 | |
JP3761566B2 (ja) | 半導体チップの製造方法 | |
JP3867110B2 (ja) | レーザ加工方法 | |
JP3867108B2 (ja) | レーザ加工装置 | |
JP4509719B2 (ja) | レーザ加工方法 | |
JP2006165594A (ja) | 半導体材料基板の切断方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20060413 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A132 Effective date: 20060509 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060710 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20060710 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061003 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070514 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070717 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070720 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100727 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 3990710 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110727 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110727 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120727 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120727 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130727 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130727 Year of fee payment: 6 |
|
EXPY | Cancellation because of completion of term |