JP3956923B2 - アバランシェフォトダイオードのバイアス電圧制御回路 - Google Patents
アバランシェフォトダイオードのバイアス電圧制御回路 Download PDFInfo
- Publication number
- JP3956923B2 JP3956923B2 JP2003327015A JP2003327015A JP3956923B2 JP 3956923 B2 JP3956923 B2 JP 3956923B2 JP 2003327015 A JP2003327015 A JP 2003327015A JP 2003327015 A JP2003327015 A JP 2003327015A JP 3956923 B2 JP3956923 B2 JP 3956923B2
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- Prior art keywords
- signal
- light
- apd
- light receiving
- bias voltage
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 230000000694 effects Effects 0.000 claims description 11
- 239000000284 extract Substances 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
また、温度依存性の小さいモニタ信号を、他に光学素子を用いることなく、かつ、APDの信号光の一部から得ることができるので、構成が簡単で均一な性能の光受信装置を得ることができる。
Claims (2)
- バイアス電圧が印加され自己増倍作用を有する第1の受光領域と、バイアス電圧が印加されず自己増倍作用を有しない第2の受光領域をもつアバランシェフォトダイオードで信号光を受光し、前記第1の受光領域で受光した光に基づく第1の信号と、前記第2の受光領域で受光した光に基づくモニタ信号とを合成した合成信号を出力するトランスインピーダンス回路と、
前記合成信号から第1の信号を抽出してその強度を出力する回路と、前記合成信号の平均値を出力する回路と、前記平均値と前記第1の信号の強度との差に所定の利得を与え第2の信号を出力する回路を備え、
前記第1の信号の強度と前記第2の信号とが等しくなるように前記バイアス電圧が制御されることを特徴とするアバランシェフォトダイオードのバイアス電圧制御回路。 - 前記第2の受光領域で受光したモニタ信号の強度のみを取出す回路をさらに備え、前記モニタ信号の強度に応じて、前記所定の利得を変えることを特徴とする請求項1に記載のアバランシェフォトダイオードのバイアス電圧制御回路。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003327015A JP3956923B2 (ja) | 2003-09-19 | 2003-09-19 | アバランシェフォトダイオードのバイアス電圧制御回路 |
US10/943,211 US20050092896A1 (en) | 2003-09-19 | 2004-09-17 | Light-receiving method of an avalanche photodiode and a bias control circuit of the same |
US11/488,077 US7214924B2 (en) | 2003-09-19 | 2006-07-18 | Light-receiving method of an avalanche photodiode and a bias control circuit of the same |
US11/712,497 US7282692B2 (en) | 2003-09-19 | 2007-03-01 | Light receiving method of an avalanche photodiode and a bias control circuit of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003327015A JP3956923B2 (ja) | 2003-09-19 | 2003-09-19 | アバランシェフォトダイオードのバイアス電圧制御回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005093834A JP2005093834A (ja) | 2005-04-07 |
JP3956923B2 true JP3956923B2 (ja) | 2007-08-08 |
Family
ID=34457001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003327015A Expired - Fee Related JP3956923B2 (ja) | 2003-09-19 | 2003-09-19 | アバランシェフォトダイオードのバイアス電圧制御回路 |
Country Status (2)
Country | Link |
---|---|
US (3) | US20050092896A1 (ja) |
JP (1) | JP3956923B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1977203A1 (en) * | 2006-01-09 | 2008-10-08 | Philips Intellectual Property & Standards GmbH | Light sensor with integrated temperature sensor functionality |
JP2008051698A (ja) * | 2006-08-25 | 2008-03-06 | Yokogawa Electric Corp | 双方向光モジュールおよびこれを用いた光パルス試験器 |
JP4679498B2 (ja) | 2006-12-11 | 2011-04-27 | 富士通株式会社 | アバランシェフォトダイオードのバイアス制御回路 |
JP5211095B2 (ja) | 2010-03-25 | 2013-06-12 | 株式会社豊田中央研究所 | 光検出器 |
ES2386732B2 (es) * | 2011-01-31 | 2013-03-13 | Universidad De Málaga | Aparato receptor láser basado en fotodiodo de avalancha termorregulado con control embebido. |
JP5808592B2 (ja) * | 2011-07-04 | 2015-11-10 | 浜松ホトニクス株式会社 | 基準電圧決定方法及び推奨動作電圧決定方法 |
US9001530B2 (en) * | 2012-06-29 | 2015-04-07 | Finisar Corporation | Integrated circuit with voltage conversion |
DE102016220492A1 (de) * | 2016-10-19 | 2018-04-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Ladungslawinen-Photodetektor-System |
CN107024289A (zh) * | 2017-04-13 | 2017-08-08 | 华中师范大学 | 一种低时间抖动的单光子探测器 |
KR102506438B1 (ko) | 2017-07-06 | 2023-03-06 | 삼성전자주식회사 | 거리 측정 장치 및 그 방법 |
US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
JP7454917B2 (ja) * | 2018-12-12 | 2024-03-25 | 浜松ホトニクス株式会社 | 光検出装置 |
DE102019107895A1 (de) * | 2019-03-27 | 2020-10-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Photodiode und Ausleseschaltung für Photodiode |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0216572B1 (en) * | 1985-09-24 | 1995-04-05 | Kabushiki Kaisha Toshiba | Semiconductor photo-detector having a two-stepped impurity profile |
JPS6377171A (ja) | 1986-09-19 | 1988-04-07 | Matsushita Electric Ind Co Ltd | 光受信器 |
JPH0687549B2 (ja) | 1986-10-22 | 1994-11-02 | 松下電器産業株式会社 | 光受信器 |
DE3852394D1 (de) * | 1988-09-15 | 1995-01-19 | Siemens Ag | Schaltungsanordnung zur Ermittlung einer empfangenen Lichtleistung. |
JP3421103B2 (ja) * | 1993-12-20 | 2003-06-30 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードを用いた光検出回路 |
JPH09321710A (ja) | 1996-05-28 | 1997-12-12 | Nec Corp | 光受信装置 |
JP2000244418A (ja) | 1999-02-23 | 2000-09-08 | Nec Corp | 光受信装置及びプログラムを記憶した記憶媒体 |
US6794631B2 (en) * | 2002-06-07 | 2004-09-21 | Corning Lasertron, Inc. | Three-terminal avalanche photodiode |
-
2003
- 2003-09-19 JP JP2003327015A patent/JP3956923B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-17 US US10/943,211 patent/US20050092896A1/en not_active Abandoned
-
2006
- 2006-07-18 US US11/488,077 patent/US7214924B2/en active Active
-
2007
- 2007-03-01 US US11/712,497 patent/US7282692B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7282692B2 (en) | 2007-10-16 |
US20060255245A1 (en) | 2006-11-16 |
US20050092896A1 (en) | 2005-05-05 |
JP2005093834A (ja) | 2005-04-07 |
US20070152138A1 (en) | 2007-07-05 |
US7214924B2 (en) | 2007-05-08 |
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