JP3935381B2 - Electronic circuit device having double-sided electrode semiconductor element and method of manufacturing the electronic circuit device - Google Patents

Electronic circuit device having double-sided electrode semiconductor element and method of manufacturing the electronic circuit device Download PDF

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JP3935381B2
JP3935381B2 JP2002070401A JP2002070401A JP3935381B2 JP 3935381 B2 JP3935381 B2 JP 3935381B2 JP 2002070401 A JP2002070401 A JP 2002070401A JP 2002070401 A JP2002070401 A JP 2002070401A JP 3935381 B2 JP3935381 B2 JP 3935381B2
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electrode
semiconductor element
circuit board
circuit device
electronic circuit
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JP2003273319A (en
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一博 登
敏 池田
裕平 山下
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Description

【０００１】
【発明の属する技術分野】
本発明は、例えばモータ駆動用としての、ＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）やダイオード等の半導体素子であってその両面に電極を有する半導体素子を有する電子回路装置、及び該電子回路装置の製造方法に関する。
【０００２】
【従来の技術】
近年、モータ駆動装置に用いられる電子機器の高性能及び高機能化に伴い、上記モータ駆動装置における使用電流も増大し、上記モータ駆動装置に用いる半導体にも大電流対応が必要となっている。従来のモータ駆動装置としては図１９に示すものがある。以下、図を参照しながら、従来のモータ駆動装置の一例について説明する。
図１９において、１ａはＩＧＢＴ、１ｂはダイオード、３は高温半田、４は金属片、５は封止樹脂、６は半田、７は回路基板、１０は放熱板、１０ａは凸部ネジ台、１１はネジ、１２は表面実装電子部品(受動素子)、１３は表面実装電子部品(半導体素子)、１４は金属ベース回路基板、１５はシリコーングリース、１８は金属線、１９は金属リード、２２は凸コネクター、２３は凹コネクター、及び２４は絶縁用樹脂である。
【０００３】
以上のように構成される従来のモータ駆動装置の製造方法を以下に説明する。まず、ＩＧＢＴ１ａ及びダイオード１ｂ等の半導体部品１を金属片４に高温半田３により接続する。次に、金属線１８を用いて、ＩＧＢＴ１ａとダイオード１ｂとの間、及びこれらの半導体部品１と金属リード１９との間を電気的に接合する。尚、通常、金属線１８は、アルミニウム線又は金線を使用する。例えばアルミニウムにてなる金属線１８を用いた場合、半導体部品１の金属片４と接合した第１電極に対向して存在する第２電極への金属線１８の接合は、アルミニウム線のウエッジボンディング方式を用いて接続する。半導体部品１の上記第２電極はアルミニウムにより形成されており、常温の状態で上記第２電極の表面におけるアルミニウムと、アルミニウムにてなる金属線１８とを超音波エネルギーを印加しながら圧接すると、それぞれのアルミニウム表面の酸化膜が除去され、上記第２電極と上記金属線１８との接合が得られる。半導体部品１の上記第２電極に接合された金属線１８は、銅にスズメッキした金属リード１９まで引き回され、金属リード１９に上記ウエッジボンディング方式にて接合される。
【０００４】
次に、半導体部品１及び金属線１８の物理的保護と信頼性向上とを目的として、トランスファー成形技術又はインジェクション成形技術を用いて、半導体部品１及び金属線１８を覆って封止樹脂５による封止を行なう。次に、金属リード１９を金型により、金属片４と同じ面まで曲げ切断する。これらの工程により、半導体部品１、高温半田３、金属片４、金属線１８、金属リード１９、及び封止樹脂５により形成された、「ＴＯ―２２０」と呼ばれる電子部品が完成する。
【０００５】
次に、金属ベース回路基板１４の上に、クリーム半田を印刷した後、上記電子部品「ＴＯ−２２０」、凸コネクター２２等の種々の電子部品を置き、該金属ベース回路基板１４の全体を加熱炉に投入する。これにて上記クリーム半田を溶融し、その後常温に戻すことにより上記クリーム半田を硬化させ、硬化した半田６にて金属ベース回路基板１４と、上記電子部品「ＴＯ−２２０」、凸コネクター２２等の種々の電子部品とを電気的及び物理的に接合する。
次に電気的絶縁を図るために、封止樹脂２４を金属ベース回路基板１４の全体に塗布した後、上記種々の電子部品を有する金属ベース回路基板１４の全体を減圧炉に投入して、封止樹脂２４の内部に混在する気泡を取り除き、加熱炉に投入し封止樹脂２４を硬化させる。
【０００６】
次に、放熱板１０にシリコーングリース１５を塗布する。次に放熱板１０に金属ベース回路基板１４を密着させ、ネジにて固定する。次に、金属ベース回路基板１４に実装された凸コネクター２２と、回路基板７上に実装された凹コネクター２３とを位置合わして凸コネクター２２を凹コネクター２３に差し込みながら、回路基板７を金属ベース回路基板１４の凸部ネジ台１０ａに密着させ、ネジ１１により固定する。
【０００７】
以上の工程により、モータ駆動電流をスイッチング制御する上記電子部品「ＴＯ−２２０」を有する、放熱が必要な電子部品を金属ベース回路基板１４に実装する工程と、上記電子部品「ＴＯ−２２０」を制御する回路が搭載され放熱の必要性のない回路基板７を組み合せる工程とが終了する。
【０００８】
【発明が解決しようとする課題】
しかしながら、上述の構成では、金属線１８と金属リード１９による抵抗ロス、及び一定長さによる浮遊インダクタンスの発生がある。又、例えば上記電子部品「ＴＯ−２２０」は金属リード１９を有するため、該電子部品「ＴＯ−２２０」の面積よりも広い面積が金属ベース回路基板１４には必要であり、小型化、高密度化が困難であるという問題がある。
一方、電気製品における近年の軽薄短小化の動向に対応して、電気製品のモータ駆動装置も小型化及び高放熱化が求められている。しかしながら、高温半田３の内部に気泡が混在する場合には、半導体部品１により発生した熱の流れが気泡により遮られ、半導体部品１から金属片４への熱抵抗が増大する。このため気泡部分のみが高温になり、最悪の場合には半導体部品１を動作不能とする場合もある。
【０００９】
又、図１９に示すように、発熱する半導体部品１からの熱は、主に、金属片２１４、金属ベース回路基板１４等を通して放熱板１０へ伝わるという経路にて放熱される。このように従来のモータ駆動装置では、放熱用経路が限定されており、半導体部品１の放熱性を向上させるのが困難な構造である。
【００１０】
又、上述のように、半導体部品１における上記第２電極への金属線１８の接合は、アルミニウム線のウエッジボンディング方式を用いて接続されるが、従来の工程では、接合工法により金属線１８の太さに制約があり、又、基板電極の配置により金属線１８の長さに制約があり、配線抵抗を低減することは不可能である。このため、近年の半導体部品１の進歩によるオン抵抗の低減に対応することができず、電気信号の高周波化、大電流化によるノイズ増大が大きな問題となっている。
【００１１】
本発明は、上述の問題点を解決するためになされたもので、小型で放熱性が良く、抵抗及び浮遊インダクタンスを低減可能な、両面電極半導体素子を有する電子回路装置、及び該電子回路装置の製造方法を提供することを目的とする。
【００１２】
【課題を解決するための手段】
上記目的を達成するために本発明は以下のように構成する。
即ち、本発明の第１態様の電子回路装置は、回路基板と電気的に接続される金属片と、
互いに対向する第１面及び第２面に電極を有し上記回路基板の半導体素子実装面と上記金属片との間に積層して配置されて上記回路基板に実装される複数の半導体素子と、
上記第１面の第１電極に電気的に接続される突起電極と、を備え、ここで、
上記金属片には、上記半導体素子の上記第２面の第２電極が電気的に接続され、
上記回路基板の半導体素子実装面には、上記突起電極が電気的に接続され、該突起電極を介して上記半導体素子の上記第１電極と電気的に接続され、
上記積層された半導体素子同士間において上記突起電極は、上記第１電極及び上記第２電極を電気的に接続し、さらに、
上記半導体素子実装面に上記突起電極及び上記金属片を介して実装された上記半導体素子及び上記金属片を包囲してかつ上記回路基板と一体的に設けられ上記半導体素子が発する熱を伝達する絶縁樹脂材と、
上記絶縁樹脂材の外表面に設けられ上記絶縁樹脂材を介して上記熱を放散する放熱部材と、
を備えたことを特徴とする。
【００１４】
又、上記第１電極、上記第２電極、及び上記突起電極は、アルミニウムにてなり、金メッキをすることができる。
【００１５】
又、上記第１電極、上記第２電極、及び上記突起電極は、アルミニウムにてなり、上記突起電極は、金メッキされており、上記半導体素子は、当該半導体素子内への異種金属の侵入を防止するバリア金属を上記第１電極及び上記第２電極の直下に有してもよい。
【００１６】
又、上記半導体素子は、上記第１面及び上記第２面に直交する当該半導体素子の側面に、当該半導体素子を保護する保護材を有してもよい。
【００１７】
さらに本発明の第２態様の電子回路装置の製造方法は、互いに対向する第１面及び第２面に電極を有する半導体素子を複数層にて回路基板に実装してなる電子回路装置の製造方法であって、
上記第１面の第１電極に突起電極を電気的に接続し、
上記回路基板に電気的に接続される金属片に、上記第２面の第２電極を接続し、さらに複数の上記半導体素子間では上記突起電極にて上記第１電極及び上記第２電極を電気的に接続することで上記複数の半導体素子を積層し、
上記回路基板の半導体素子実装面に上記突起電極及び上記金属片を介して上記半導体素子を実装した後、該半導体素子が発する熱を伝達する絶縁樹脂材を、該半導体素子及び上記金属片を包囲してかつ上記回路基板及び上記熱を放散する放熱部材と一体的に上記半導体素子実装面側に設ける、
ことを特徴とする。
【００１９】
【発明の実施の形態】
本発明の実施形態における、両面電極半導体素子を有する電子回路装置及び該電子回路装置の製造方法について、図を参照しながら以下に説明する。尚、各図において同じ構成部分については同じ符号を付している。
図１に示す本実施形態の電子回路装置２０１は、半導体素子２１１を回路基板２１５に実装した電子回路装置であって、突起電極２１２、金属片２１４、絶縁樹脂材２１６、及び放熱部材２１７を備える。電子回路装置２０１の構成について、さらに詳細に以下に説明する。
半導体素子２１１は、モータ等の駆動機器への駆動電流の制御系に用いられ、発熱するため放熱処置が必要な駆動用半導体素子であり、本実施形態では、ＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）２１１−ｉと、ダイオード２１１−ｄとから構成される。尚、本実施形態では、図示するように半導体素子２１１は、積層されることから、ＩＧＢＴ２１１−ｉ−１、ＩＧＢＴ２１１−ｉ−２、ダイオード２１１−ｄ−１、及びダイオード２１１−ｄ−２を有する。又、それぞれの半導体素子２１１は、互いに対向する第１面２１１ａ及び第２面２１１ｂを有し、第１面２１１ａには第１電極２２２が設けられ第２面２１１ｂには第２電極２２３が設けられている。上記第１電極２２２には、図９〜図１５を参照して後述する形成方法にて、突起した形状で金属製の突起電極２１２が形成される。又、本実施形態では、突起電極２１２の表面に金メッキが施される。尚、図１に示す例では、複数の半導体素子２１１をその厚み方向に積層した形態を採っている。
【００２０】
２１３は、金属と金属の接合材である半田であり、２１３ａは、放熱処置が必要な半導体素子２１１の接合に用いられる高温半田であり、本例ではＩＧＢＴ２１１−ｉ−１及びダイオード２１１−ｄ−１と上記金属片２１４との接合に使用されている。一方、２１３ｂは、回路基板２１５上の銅電極２１５ａとの接合に用いられる通常使用される半田である。
金属片２１４は、半導体素子２１１より発生した熱を放熱及び拡散すると同時に、半導体素子２１１が送出する電気信号を回路基板２１５へ伝達する導電性部材であり、回路基板２１５との接合を行う凸部２１４ａを有する。又、回路基板２１５は、いわゆる両面実装可能な基板であり、半導体素子実装面２１５ｂに上述の半導体素子２１１が実装され、半導体素子実装面２１５ｂに対向する部品実装面には、弱電系の半導体素子で構成されている表面実装電子部品２１８、及び抵抗やコンデンサーなど受動部品２１９が半田付けされる。
【００２１】
上記絶縁樹脂材２１６は、回路基板２１５の半導体素子実装面２１５ｂに上記突起電極２１２及び上記金属片２１４を介して実装された上記半導体素子２１１及び上記金属片２１４を包囲してかつ回路基板２１５と一体的に設けられ、半導体素子２１１が発する熱を伝達する樹脂材であり、又、半導体素子２１１の絶縁及び物理的保護の役割をも有する。よって絶縁樹脂材２１６は、上記半導体素子２１１及び上記金属片２１４をモールドしかつ上記半導体素子実装面２１５ｂに接触して回路基板２１５と一体的な構成となる。
上記放熱部材２１７は、アルミニウム製の放熱板であり、絶縁樹脂材２１６の外表面に設けられ絶縁樹脂材２１６を介して、半導体素子２１１が発した熱を放散する。
このような構造を有する電子回路装置２０１は、図２に示す回路構成を有する。図２に示す、「Ａ」、「Ｃ」、「Ｅ」、「Ｇ」、及び「Ｋ」の各箇所は、図１に記された「Ａ」、「Ｃ」、「Ｅ」、「Ｇ」、及び「Ｋ」の各箇所に対応する。
【００２２】
上述のような構造を有する電子回路装置２０１の製造方法を、図３〜図８を用いて説明する。
上記ＩＧＢＴ２１１−ｉ、及びダイオード２１１−ｄは、公知の半導体集積回路の形成方法にて半導体ウエハ上に格子状に複数形成されており、上述したように、第１面２１１ａ及び第２面２１１ｂに第１電極２２２及び第２電極２２３を有する。本実施形態では、第１電極２２２及び第２電極２２３はアルミニウムにてなる。第１工程では、このような半導体ウエハに形成されている例えば上記第１電極２２２に対して、図９〜図１１を参照して後述する方法にて、突起電極２１２が形成される。本実施形態では、突起電極２１２もアルミニウムボールから形成される。次の第２工程では、アルミニウムにてなる部分の全て、つまり上記第１電極２２２、第２電極２２３、及び突起電極２１２に、ニッケル及び金メッキを施し、金で覆われた突起電極２１２を形成する。ニッケル及び金メッキの形成理由は、上述のように本例では突起電極がアルミニウムでありアルミニウムのままでは半田付けができないという問題を解決すると同時に、半田がアルミニウムにてなる第１電極２２２及び第２電極２２３から半導体素子２１１の内部に拡散し半導体素子２１１を損傷させる現象を防止するバリアメタルとしての機能を得るためである。尚、本実施形態では、無電解ニッケル及び金メッキの処理を行った。
該第２工程後、ウエハ状態にて形成されている半導体素子２１１をダイシング装置により個々の半導体素子２１１に切り分ける。切り分けられたＩＧＢＴ２１１−ｉ、及びダイオード２１１−ｄを図３に示す。
【００２３】
次の第３工程では以下の動作がなされる。まず、窒素と水素の混合雰囲気で還元雰囲気状態を維持した３５０℃の高温炉内に金属片２１４を投入する。次に、溶融した高温半田２１３ａを、上記高温炉の中で金属片２１４における半導体素子接合箇所２１４ｂに滴下する。次に、上記高温炉内にて、金属片２１４の半導体素子接合箇所２１４ｂに、図４に示すように、切り分けたＩＧＢＴ２１１−ｉ、及びダイオード２１１−ｄを載置し、さらに、上記ＩＧＢＴ２１１−ｉ及びダイオード２１１−ｄにおける各第２電極２２３と、溶融した高温半田２１３ａとの間に気泡が残らないように、ＩＧＢＴ２１１−ｉ及びダイオード２１１−ｄと、金属片２１４とを相対的に押圧する。尚、本実施形態では、ＩＧＢＴ２１１−ｉ及びダイオード２１１−ｄに金属片２１４を平行にして押圧して密着させている。次に、該密着状態を維持しながら、金属片２１４、並びにＩＧＢＴ２１１−ｉ及びダイオード２１１−ｄを冷却し、高温半田２１３ａを凝固させる。該凝固後、ＩＧＢＴ２１１−ｉ及びダイオード２１１−ｄが接合された金属片２１４を大気中に戻す。
【００２４】
本実施形態では上述のように半導体素子２１１を積層することから、次の第４工程では、図５に示すように、金属片２１４上に高温半田２１３ａにより接合されたＩＧＢＴ２１１−ｉ及びダイオード２１１−ｄの半導体素子２１１上に形成されている突起電極２１２上に、半導体素子２１１及び積層用の突起電極２１２を形成する。ここで、突起電極２１２を複数個積層してなる上記積層用の突起電極２１２を、積層用金属電極と呼び符号２２１を付す。尚、該積層用金属電極２２１の製造工程の詳細は、図１４及び図１５を参照して後述する。
【００２５】
次の第５工程では、図６に示すように、回路基板２１５に形成されている銅電極２１５ａにクリーム半田を印刷し、図５に示すような、半導体素子２１１、上記積層用金属電極２２１、及び金属片２１４が一体的に形成された部品２３０を、回路基板２１５の半導体素子実装面２１５ｂ上の取付位置に置く。次に、上記部品２３０及び回路基板２１５を加熱することにより、上記クリーム半田を溶融し、その後常温に戻すことにより上記クリーム半田を凝固させ、積層用金属電極２２１、突起電極２１２、及び金属片２１４の上記凸部２１４ａを、回路基板２１５の電極２１５ａに電気的及び物理的に接合させる。
【００２６】
次の第６工程では、図７に示すように、上記半導体素子実装面２１５ｂに対向する表面実装部品実装面２１５ｃに、通常の表面実装工程を用いて、放熱が不要な、半導体チップ状の表面実装電子部品２１８及び受動部品２１９を接合して、実装済部品２３１を作製する。
【００２７】
次の第７工程では、図８に示すように、本実施形態では凹部２３２を有しアルミニウムにてなる放熱部材２１７に対して、上記凹部２３２に上記部品２３０を収納し上記回路基板２１５にて上記凹部２３２の蓋をするように放熱部材２１７と回路基板２１５とを密着する。そしてこの状態で、加熱装置２３５にて１５０℃に加熱された成形用の金型２３３内へ搬入する。そして、放熱部材２１７と回路基板２１５との間の空間、つまり上記凹部２３２へ、トランスファー成形機２３４にて絶縁樹脂材２１６をトランスファー成形工法により流し込む。上記絶縁樹脂材２１６は、半導体素子２１１が発する熱を伝達する樹脂材であればよく、本実施形態では、液状の熱硬化性エポキシ樹脂を用いている。注入された絶縁樹脂材２１６は、加熱されている金型２３３の温度によって硬化する。このとき、トランスファー成形機２３４による加圧力により、絶縁樹脂材２１６内に空気のボイドの発生もないことから、良好な絶縁性と放熱性を得ることができる。絶縁樹脂材２１６の硬化後、金型２３３から取り出して、図１に示す電子回路装置２０１が完成する。
【００２８】
上述した、上記第１電極２２２への突起電極２１２の形成方法について、図９〜図１１を参照して説明する。図９〜図１１では、半導体素子２１１の第１面２１１ａにあるアルミニウムにてなる第１電極２２２に突起電極２１２を形成する方法を示している。ここで、２５０は突起電極２１２となる金属ボール２５６を保持する接合ヘッド、２５１は上記接合ヘッド２５０に接続され第１電極２２２に突起電極２１２を形成するときに接合ヘッド２５０を介して上記金属ボール２５６を押圧する押圧装置、２５２は接合ヘッド２５０に接続され接合ヘッド２５０に金属ボール２５６を吸着保持させる吸引装置、２５３は接合ヘッド２５０に接続され第１電極２２２に突起電極２１２を形成するとき上記金属ボール２５６に超音波振動を作用させるための超音波振動装置、２５４は半導体素子２１１を載置して第１電極２２２に突起電極２１２を形成するときに半導体素子２１１を加熱する加熱ステージであり、及び２５５はこれらの各装置２５０〜２５４の動作制御を行う制御装置である。又、本実施形態では、金属ボール２５６はアルミニウムにてなり、接合ヘッド２５０の中央部には、上記吸引装置２５２に接続されている吸着用穴２５７が形成されている。又、吸着用穴２５７の開口部分には、金属ボール２５６の支持位置を一定としかつ金属ボール２５６を確実に支持するためのテーパー部２５７ａを有する。
【００２９】
このような構成において、まず、半導体素子２１１を加熱ステージ２５４上に固定する。加熱ステージ２５４の温度条件は、半導体素子２１１の表面温度が１５０℃〜３００℃になるように設定する。次に、図１０に示すように、上記吸引装置２５２にて接合ヘッド２５０の上記テーパー部２５７ａに金属ボール２５６を吸着し保持する。次に、上記押圧装置２５１にて、金属ボール２５６が半導体素子２１１上の第１電極２２２に接触するように、接合ヘッド２５０を降下させ、さらに金属ボール２５６を第１電極２２２に適正な荷重条件２５８で押圧する。例えば、金属ボール２５６の直径が０．６５ｍｍの場合、上記荷電条件２５８は約１０〜３０Ｎ程度が適正である。さらに又、金属ボール２５６が第１電極２２２に接触したことを、接合ヘッド１０に設置している接触検出センサーにて検出し、接触した瞬間から上記超音波振動装置２５３にて超音波振動２５９を、接合ヘッド２５０に印加する。本実施形態では、超音波振動２５９の周波数は、６３．５ｋＨｚ、出力は１〜２Ｗであり、印加時間は０．１〜０．３秒である。上述の荷重、加熱、及び超音波振動の作用により金属ボール２５６と第１電極２２２との金属接合を発生させ、接合が行われかつ成形され、突起電極２１２となる。金属ボール２５６の直径が０．６５ｍｍの場合、接合強度は約１０〜３０Ｎ程度となる。
【００３０】
以上の工程により、図１１に示すように、半導体素子２１１上の第１電極２２２に突起電極２１２の形成が終了する。次工程として、アルミニウムにてなる突起電極２１２を半田付け可能にするため、及び半導体素子２１１の内部に、異種金属が浸入するのを防止するため、突起電極２１２及び第１電極２２２を金属メッキする。本実施例では無電解メッキによりニッケル及び金をメッキした。該メッキ工程により、突起電極２１２の表面は金で覆われ、半田付けが可能になる金メッキ突起電極２１２になる。又、上記第１電極２２２は、金メッキで覆われた金メッキ第１電極２２２になる。
【００３１】
上述のように本実施形態では突起電極２１２及び第１電極２２２に金属メッキを施したが、該工程は省略することもできる。即ち、図１２及び図１３に示すように、上記金属メッキ工程を省くため、上記アルミニウムにてなる金属ボール２５６に対して電解によりニッケル及び金メッキを形成した、金メッキ金属ボール２５６−１を用いる。又、半導体素子２１１の内部への異種金属の浸入防止効果を得るために、半導体素子２１１の内部であって第１電極２２２の直下にバリアメタル２６１を形成している。本実施形態では、バリアメタル２６１としてＴｉＮを用いている。その他、金メッキ金属ボール２５６−１にて、第１電極２２２上に突起電極２１２を形成する動作は、上述の場合に同じである。
金メッキ金属ボール２５６−１及びバリアメタル２６１を用いる図１２及び図１３に示す方法では、図９〜図１１に示す方法とは異なり、半導体素子２１１をメッキする工程は必要なくなる。
【００３２】
次に、上述した、第４工程における積層用金属電極２２１の形成方法について説明する。
図９及び図１０を参照して説明した方法と同じ工法により、図１４及び図１５に示すように、金メッキされた突起電極２１２上に、金メッキされた金属ボール２５６−１を、金と金とにより接合する。本実施形態では図１に示すように合計３段、重ねた。
【００３３】
次に、図１に示すように下層に形成した例えばダイオード２１１−ｄ−１の第１電極２２２に形成した突起電極２１２上に、ダイオード２１１−ｄ−２の第２電極２２３を接合する工程について、図１６及び図１７を参照して説明する。
上述の場合と同様に、金属片２１４には高温半田２１３ａにて、ダイオード２１１−ｄ−１に対応する、下層の半導体素子２１１−１が取り付けられている。尚、該半導体素子２１１−１の第１電極２２２には金メッキされた突起電極２１２が形成されている。又、好ましくは、半導体素子２１１の上記第１面２１１ａ及び第２面２１１ｂに直交する当該半導体素子２１１の側面２１１ｃ、この場合、半導体素子２１１−１の側面２１１ｃに、該側面２１１ｃを保護する保護材２６５を塗布する。該保護材２６５として、本例ではジャンクションコートレジンを塗布している。このような半導体素子２１１−１の突起電極２１２と、上層の半導体素子２１１−２における金メッキされた第２電極２２３とを図９及び図１０を参照して説明した超音波振動を含む工法により接合する。尚、上記半導体素子２１１−２の側面にも上記保護材２６５を塗布している。
次に、図１７に示すように、回路基板２１５と、半導体素子２１１−２の突起電極２１２及び金属片２１４との接合についても、図６を参照して説明した動作と同様に、回路基板２１５の銅電極２１５ａにクリーム半田を印刷した後、全体を加熱することにより溶融し接合する表面実装技術を用いる。
【００３４】
以上説明したような製造方法にて作製される電子回路装置２０１によれば、半導体素子２１１に対する電気的接続は、従来の金属線を用いず突起電極２１２等により行うことから、抵抗及び浮遊インダクタンスを低減することができ、又、装置構成を従来に比べて小型化することができる。さらに、発熱する半導体素子２１１、及び半導体素子２１１を取り付けた金属片２１４を、除熱効果のある絶縁樹脂材２１６にてモールドし、かつ上記金属片２１４を回路基板２１５に接続し、かつ絶縁樹脂材２１６が回路基板２１５の半導体素子実装面２１５ｂに接触することから、半導体素子２１１にて発した熱は、絶縁樹脂材２１６を伝達して放熱部材２１７から放散され、かつ金属片２１４及び絶縁樹脂材２１６を介して回路基板２１５へも伝達され回路基板２１５からも放散される。よって、従来に比べて放熱性に優れた電子回路装置を提供することができる。
【００３５】
上述の実施形態では、金属片２１４はＬ字形にてなるが、該形状に限定されるものではなく、半導体素子２１１と回路基板２１５とを電気的に接続する形態であればよい。
又、放熱部材２１７についても、上述の実施形態では凹部２３２を有する形状であるが、該形状に限定されるものではない。
又、上述の実施形態では、金属片２１４と半導体素子２１１とは高温半田２１３ａにて電気的及び物理的に接続したが、突起電極２１２を用いて接続することもできる。
又、上述の実施形態では、図１４及び図１５を参照して説明したように、突起電極２１２を複数段に重ねて半導体素子２１１と回路基板２１５とを電気的に接続したが、該形態に限定されるものでない。但し、従来のように金属線にて接続することを除く。
【００３６】
又、上述の実施形態では、図１に示すように半導体素子２１１を複数層に重ねた形態を例に採ったが、図１８に示すように、一層にて電子回路装置を構成することもできる。
上述したような各変形例においても、上記電子回路装置２０１が奏する上述の効果を勿論奏することができる。
【００３７】
【発明の効果】
以上詳述したように本発明の第１態様の電子回路装置、及び第２態様の電子回路装置の製造方法によれば、半導体素子と回路基板との電気的接続を、従来の配線用ワイヤに変えて突起電極及び金属片を使用することにより、浮遊インダクタンスや導通抵抗の低減を図ることができ、又、回路装置の小型化を図ることができる。さらに、上記金属片及び上記半導体素子を絶縁樹脂材にてモールドし、かつ回路基板、絶縁樹脂材、及び放熱部材を一体化したことにより、半導体素子からの熱の放散を従来に比べて高めることができる。
【００３８】
又、複数の半導体素子を積層するとき、積層された半導体素子間をも上記突起電極で接続することで、上述のように浮遊インダクタンスや導通抵抗の低減を図ることができる。
又、上記半導体素子の第１電極及び第２電極、並びに上記突起電極に金メッキを施すことで、これらの素材がアルミニウムにてなる場合であっても、半田接合を行うことが可能となる。
又、上記半導体素子の第１電極及び第２電極の直下にバリア金属を設けることで、半導体素子、特に上記第１電極及び第２電極には金メッキを施す必要がなくなる。
又、上記半導体素子の側面に保護材を設けることで、半導体素子の接合工程にて当該半導体素子の損傷を防止することができる。
【図面の簡単な説明】
【図１】 本発明の実施形態における電子回路装置の断面図である。
【図２】 図１に示す電子回路装置の回路図である。
【図３】 図１に示す電子回路装置の製造方法における一工程を説明するための図であって半導体素子に突起電極を形成した状態を示す図である。
【図４】 図１に示す電子回路装置の製造方法における一工程を説明するための図であって突起電極を形成した半導体素子を金属片に取り付けた状態を示す図である。
【図５】 図１に示す電子回路装置の製造方法における一工程を説明するための図であって半導体素子を積層した状態を示す図である。
【図６】 図１に示す電子回路装置の製造方法における一工程を説明するための図であって図５の状態に回路基板を取り付けた状態を示す図である。
【図７】 図１に示す電子回路装置の製造方法における一工程を説明するための図であって図６の回路基板に電子部品を装着した状態を示す図である。
【図８】 図１に示す電子回路装置の製造方法における一工程を説明するための図であって図７に示す実装済部品を金型内に装填した状態を示す図である。
【図９】 図１に示す電子回路装置の製造方法において半導体素子の電極へ突起電極を形成する工程を説明するための図であって金属ボールが接合ヘッドに保持されている状態を示す図である。
【図１０】 図１に示す電子回路装置の製造方法において半導体素子の電極へ突起電極を形成する工程を説明するための図であって上記金属ボールを電極上へ押圧している状態を示す図である。
【図１１】 図１に示す電子回路装置の製造方法において半導体素子の電極へ突起電極を形成する工程を説明するための図であって電極上に突起電極を形成した状態を示す図である。
【図１２】 図１に示す電子回路装置の製造方法において半導体素子の電極へ突起電極を形成する他の工程を説明するための図である。
【図１３】 図１２に示す突起電極形成工程において突起電極が形成された状態を示す図である。
【図１４】 図１に示す電子回路装置の製造方法において半導体素子の突起電極上へさらに突起電極を形成する工程を説明するための図であって金属ボールが接合ヘッドに保持されている状態を示す図である。
【図１５】 図１４に示す突起電極形成工程において突起電極が形成された状態を示す図である。
【図１６】 図１に示す電子回路装置の製造方法において半導体素子の突起電極上へさらに半導体素子を接合する工程を説明するための図であって他の半導体素子が接合ヘッドに保持されている状態を示す図である。
【図１７】 図１６に示す工程にて半導体素子が積層された状態を示す図である。
【図１８】 図１に示す電子回路装置の製造方法の変形例を示す図であって半導体素子が一層のみの場合を示す図である。
【図１９】 従来の電子回路装置の構成を示す図である。
【符号の説明】
２０１…電子回路装置、２１１…半導体素子、２１１ａ…第１面、
２１１ｂ…第２面、２１１ｃ…側面、２１２…突起電極、２１４…金属片、
２１５…回路基板、２１５ｂ…半導体素子実装面、２１６…絶縁樹脂材、
２１７…放熱部材、２２２…第１電極、２２３…第２電極、
２６１…バリアメタル、２６５…保護材。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic circuit device having semiconductor elements such as IGBTs (insulated gate bipolar transistors) and diodes for driving a motor and having electrodes on both sides thereof, and a method of manufacturing the electronic circuit device About.
[0002]
[Prior art]
In recent years, with the increase in performance and functionality of electronic devices used in motor drive devices, the current used in the motor drive devices has increased, and the semiconductors used in the motor drive devices are also required to handle large currents. A conventional motor driving device is shown in FIG. Hereinafter, an example of a conventional motor driving device will be described with reference to the drawings.
In FIG. 19, 1a is an IGBT, 1b is a diode, 3 is high-temperature solder, 4 is a metal piece, 5 is a sealing resin, 6 is solder, 7 is a circuit board, 10 is a heat sink, 10a is a convex screw base, 11 Is a screw, 12 is a surface-mounted electronic component (passive element), 13 is a surface-mounted electronic component (semiconductor element), 14 is a metal base circuit board, 15 is silicone grease, 18 is a metal wire, 19 is a metal lead, 22 is a convex A connector, 23 is a concave connector, and 24 is an insulating resin.
[0003]
A method for manufacturing the conventional motor driving apparatus configured as described above will be described below. First, the semiconductor component 1 such as the IGBT 1 a and the diode 1 b is connected to the metal piece 4 by the high temperature solder 3. Next, the metal wire 18 is used to electrically join the IGBT 1 a and the diode 1 b and the semiconductor component 1 and the metal lead 19. Usually, the metal wire 18 uses an aluminum wire or a gold wire. For example, when a metal wire 18 made of aluminum is used, the bonding of the metal wire 18 to the second electrode existing opposite to the first electrode joined to the metal piece 4 of the semiconductor component 1 is performed by an aluminum wire wedge bonding method. Connect using. The second electrode of the semiconductor component 1 is formed of aluminum. When the aluminum wire on the surface of the second electrode and the metal wire 18 made of aluminum are pressed while applying ultrasonic energy in a room temperature state, respectively. The oxide film on the aluminum surface is removed, and the second electrode and the metal wire 18 are joined. The metal wire 18 joined to the second electrode of the semiconductor component 1 is routed to a metal lead 19 tin-plated on copper and joined to the metal lead 19 by the wedge bonding method.
[0004]
Next, for the purpose of physical protection of the semiconductor component 1 and the metal wire 18 and improvement of reliability, the semiconductor component 1 and the metal wire 18 are covered with a sealing resin 5 using a transfer molding technique or an injection molding technique. Stop. Next, the metal lead 19 is bent and cut to the same surface as the metal piece 4 by a mold. Through these steps, an electronic component called “TO-220” formed by the semiconductor component 1, the high-temperature solder 3, the metal piece 4, the metal wire 18, the metal lead 19, and the sealing resin 5 is completed.
[0005]
Next, after cream solder is printed on the metal base circuit board 14, various electronic parts such as the electronic component “TO-220” and the convex connector 22 are placed, and the entire metal base circuit board 14 is heated. Put it in the furnace. The cream solder is then melted, and then the cream solder is cured by returning to room temperature. The cured solder 6 is used for the metal base circuit board 14, the electronic component “TO-220”, the convex connector 22, etc. Various electronic components are electrically and physically joined.
Next, in order to achieve electrical insulation, a sealing resin 24 is applied to the entire metal base circuit board 14, and then the entire metal base circuit board 14 having the various electronic components is placed in a vacuum furnace and sealed. Bubbles mixed in the inside of the stop resin 24 are removed, and the sealing resin 24 is cured by putting it in a heating furnace.
[0006]
Next, silicone grease 15 is applied to the heat sink 10. Next, the metal base circuit board 14 is brought into close contact with the heat sink 10 and fixed with screws. Next, while aligning the convex connector 22 mounted on the metal base circuit board 14 and the concave connector 23 mounted on the circuit board 7 and inserting the convex connector 22 into the concave connector 23, the circuit board 7 is moved to the metal base. It is brought into close contact with the convex screw base 10 a of the circuit board 14 and fixed with screws 11.
[0007]
Through the above steps, the electronic component “TO-220” for switching control of the motor drive current is mounted on the metal base circuit board 14 and the electronic component “TO-220” is mounted. The process of assembling the circuit board 7 on which the circuit to be controlled is mounted and which does not require heat dissipation ends.
[0008]
[Problems to be solved by the invention]
However, in the above-described configuration, there is a resistance loss due to the metal wire 18 and the metal lead 19 and stray inductance due to a certain length. Further, for example, since the electronic component “TO-220” has the metal lead 19, an area larger than the area of the electronic component “TO-220” is necessary for the metal base circuit board 14, which is reduced in size and density. There is a problem that it is difficult to realize.
On the other hand, in response to the recent trend of miniaturization in electrical products, motor drive devices for electrical products are also required to be smaller and have higher heat dissipation. However, when bubbles are mixed inside the high-temperature solder 3, the heat flow generated by the semiconductor component 1 is blocked by the bubbles, and the thermal resistance from the semiconductor component 1 to the metal piece 4 increases. For this reason, only the bubble portion becomes high temperature, and in the worst case, the semiconductor component 1 may be disabled.
[0009]
Further, as shown in FIG. 19, heat from the semiconductor component 1 that generates heat is radiated mainly through a path that is transmitted to the heat radiating plate 10 through the metal piece 214, the metal base circuit board 14, and the like. Thus, in the conventional motor drive device, the heat dissipation path is limited, and it is difficult to improve the heat dissipation of the semiconductor component 1.
[0010]
Further, as described above, the joining of the metal wire 18 to the second electrode in the semiconductor component 1 is connected using the aluminum wire wedge bonding method. In the conventional process, the metal wire 18 is joined by the joining method. The thickness is limited, and the length of the metal wire 18 is limited depending on the arrangement of the substrate electrodes, and it is impossible to reduce the wiring resistance. For this reason, it is not possible to cope with the reduction in on-resistance due to the recent advancement of the semiconductor component 1, and the increase in noise due to the high frequency and large current of the electric signal is a big problem.
[0011]
The present invention has been made to solve the above-described problems, and is an electronic circuit device having a double-sided electrode semiconductor element that is small in size, has good heat dissipation, and can reduce resistance and stray inductance. An object is to provide a manufacturing method.
[0012]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
That is, the electronic circuit device according to the first aspect of the present invention includes a metal piece electrically connected to the circuit board,
A plurality of semiconductor elements mounted on the circuit board by being stacked between the semiconductor element mounting surface of the circuit board and the metal piece having electrodes on the first surface and the second surface facing each other;
A protruding electrode electrically connected to the first electrode of the first surface, wherein
A second electrode of the second surface of the semiconductor element is electrically connected to the metal piece;
The protruding electrode is electrically connected to the semiconductor element mounting surface of the circuit board, and is electrically connected to the first electrode of the semiconductor element via the protruding electrode,
Between the stacked semiconductor elements, the protruding electrode electrically connects the first electrode and the second electrode, and
An insulation that surrounds the semiconductor element and the metal piece mounted on the semiconductor element mounting surface via the protruding electrode and the metal piece and is provided integrally with the circuit board and transmits heat generated by the semiconductor element. Resin material,
A heat dissipating member that is provided on the outer surface of the insulating resin material and dissipates the heat through the insulating resin material;
It is provided with.
[0014]
The first electrode, the second electrode, and the protruding electrode are made of aluminum and can be plated with gold.
[0015]
The first electrode, the second electrode, and the protruding electrode are made of aluminum, the protruding electrode is gold-plated, and the semiconductor element prevents foreign metals from entering the semiconductor element. A barrier metal may be provided directly below the first electrode and the second electrode.
[0016]
The semiconductor element may have a protective material for protecting the semiconductor element on a side surface of the semiconductor element orthogonal to the first surface and the second surface.
[0017]
Furthermore, the method for manufacturing an electronic circuit device according to the second aspect of the present invention is a method for manufacturing an electronic circuit device in which semiconductor elements having electrodes on the first and second surfaces facing each other are mounted on a circuit board in a plurality of layers. Because
Electrically connecting a protruding electrode to the first electrode on the first surface;
The second electrode on the second surface is connected to a metal piece that is electrically connected to the circuit board, and the first electrode and the second electrode are electrically connected by the protruding electrode between the plurality of semiconductor elements. By stacking the plurality of semiconductor elements,
After the semiconductor element is mounted on the semiconductor element mounting surface of the circuit board via the protruding electrode and the metal piece, an insulating resin material that transmits heat generated by the semiconductor element is surrounded by the semiconductor element and the metal piece. And provided on the semiconductor element mounting surface side integrally with the circuit board and the heat dissipation member that dissipates the heat,
It is characterized by that.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
An electronic circuit device having a double-sided electrode semiconductor element and a method of manufacturing the electronic circuit device in an embodiment of the present invention will be described below with reference to the drawings. In addition, the same code | symbol is attached | subjected about the same component in each figure.
An electronic circuit device 201 of this embodiment shown in FIG. 1 is an electronic circuit device in which a semiconductor element 211 is mounted on a circuit board 215, and includes a protruding electrode 212, a metal piece 214, an insulating resin material 216, and a heat dissipation member 217. . The configuration of the electronic circuit device 201 will be described in further detail below.
The semiconductor element 211 is a driving semiconductor element that is used in a control system for driving current to a driving device such as a motor and generates heat and requires heat dissipation. In this embodiment, an IGBT (insulated gate bipolar transistor) 211 is used. -I and a diode 211-d. In the present embodiment, since the semiconductor element 211 is stacked as illustrated, the semiconductor element 211 includes the IGBT 211-i-1, the IGBT 211-i-2, the diode 211-d-1, and the diode 211-d-2. . Each semiconductor element 211 has a first surface 211a and a second surface 211b facing each other. The first electrode 222 is provided on the first surface 211a, and the second electrode 223 is provided on the second surface 211b. It has been. The first electrode 222 is formed with a protruding electrode 212 made of metal in a protruding shape by a forming method described later with reference to FIGS. In this embodiment, the surface of the protruding electrode 212 is plated with gold. Note that the example shown in FIG. 1 adopts a form in which a plurality of semiconductor elements 211 are stacked in the thickness direction.
[0020]
Reference numeral 213 denotes solder that is a metal-to-metal bonding material, and reference numeral 213a denotes high-temperature solder used for bonding the semiconductor element 211 that requires heat dissipation. In this example, the IGBT 211-i-1 and the diode 211-d- 1 and the metal piece 214 are used for joining. On the other hand, 213b is normally used solder used for joining with the copper electrode 215a on the circuit board 215.
The metal piece 214 is a conductive member that dissipates and diffuses the heat generated from the semiconductor element 211 and at the same time transmits an electrical signal sent from the semiconductor element 211 to the circuit board 215, and is a convex part that joins the circuit board 215. 214a. The circuit board 215 is a board that can be mounted on both sides. The above-described semiconductor element 211 is mounted on the semiconductor element mounting surface 215b, and the low-power semiconductor element is mounted on the component mounting surface facing the semiconductor element mounting surface 215b. The surface mount electronic component 218 configured by the above and the passive component 219 such as a resistor and a capacitor are soldered.
[0021]
The insulating resin material 216 surrounds the semiconductor element 211 and the metal piece 214 mounted on the semiconductor element mounting surface 215b of the circuit board 215 via the protruding electrode 212 and the metal piece 214, and A resin material that is integrally provided and transmits heat generated by the semiconductor element 211, and also has a role of insulating and physically protecting the semiconductor element 211. Therefore, the insulating resin material 216 molds the semiconductor element 211 and the metal piece 214 and comes into contact with the semiconductor element mounting surface 215b to be integrated with the circuit board 215.
The heat dissipating member 217 is an aluminum heat dissipating plate and dissipates heat generated by the semiconductor element 211 through the insulating resin material 216 provided on the outer surface of the insulating resin material 216.
The electronic circuit device 201 having such a structure has a circuit configuration shown in FIG. Each of “A”, “C”, “E”, “G”, and “K” shown in FIG. 2 is indicated by “A”, “C”, “E”, “G” shown in FIG. ”And“ K ”.
[0022]
A method for manufacturing the electronic circuit device 201 having the above-described structure will be described with reference to FIGS.
A plurality of the IGBTs 211-i and the diodes 211-d are formed in a lattice shape on the semiconductor wafer by a known method for forming a semiconductor integrated circuit, and as described above, on the first surface 211a and the second surface 211b. A first electrode 222 and a second electrode 223 are included. In the present embodiment, the first electrode 222 and the second electrode 223 are made of aluminum. In the first step, for example, the protruding electrode 212 is formed on the first electrode 222 formed on such a semiconductor wafer by a method described later with reference to FIGS. In the present embodiment, the protruding electrode 212 is also formed from an aluminum ball. In the next second step, nickel and gold plating are applied to all the portions made of aluminum, that is, the first electrode 222, the second electrode 223, and the protruding electrode 212 to form the protruding electrode 212 covered with gold. . The reason why nickel and gold plating are formed is that, as described above, in this example, the problem is that the protruding electrode is aluminum and soldering cannot be performed if aluminum is used, and at the same time, the first electrode 222 and the second electrode where the solder is aluminum. This is to obtain a function as a barrier metal that prevents a phenomenon in which the semiconductor element 211 is damaged by diffusing from 223 into the semiconductor element 211. In this embodiment, electroless nickel and gold plating are performed.
After the second step, the semiconductor element 211 formed in the wafer state is cut into individual semiconductor elements 211 by a dicing apparatus. The separated IGBT 211-i and diode 211-d are shown in FIG.
[0023]
In the next third step, the following operation is performed. First, the metal piece 214 is put into a 350 ° C. high temperature furnace maintained in a reducing atmosphere in a mixed atmosphere of nitrogen and hydrogen. Next, the melted high-temperature solder 213a is dropped on the semiconductor element joining portion 214b in the metal piece 214 in the high-temperature furnace. Next, in the high temperature furnace, as shown in FIG. 4, the separated IGBT 211-i and the diode 211-d are placed at the semiconductor element joining portion 214 b of the metal piece 214, and further, the IGBT 211-i The IGBT 211-i, the diode 211-d, and the metal piece 214 are relatively pressed so that no bubbles remain between the second electrodes 223 of the diode 211-d and the molten high-temperature solder 213a. In the present embodiment, the metal piece 214 is pressed in close contact with the IGBT 211-i and the diode 211-d in parallel. Next, while maintaining the close contact state, the metal piece 214, the IGBT 211-i, and the diode 211-d are cooled to solidify the high-temperature solder 213a. After the solidification, the metal piece 214 to which the IGBT 211-i and the diode 211-d are joined is returned to the atmosphere.
[0024]
In the present embodiment, since the semiconductor elements 211 are stacked as described above, in the next fourth step, as shown in FIG. 5, the IGBT 211-i and the diode 211- joined to the metal piece 214 by the high temperature solder 213a. The semiconductor element 211 and the stacked protruding electrode 212 are formed on the protruding electrode 212 formed on the semiconductor element 211 of d. Here, the above-mentioned laminated projecting electrode 212 formed by laminating a plurality of projecting electrodes 212 is referred to as a “stacking metal electrode” 221. The details of the manufacturing process of the metal electrode for lamination 221 will be described later with reference to FIGS.
[0025]
In the next fifth step, as shown in FIG. 6, the cream solder is printed on the copper electrode 215a formed on the circuit board 215, and as shown in FIG. 5, the semiconductor element 211, the metal electrode 221 for lamination, And the component 230 in which the metal piece 214 is integrally formed is placed at a mounting position on the semiconductor element mounting surface 215b of the circuit board 215. Next, the cream solder is melted by heating the component 230 and the circuit board 215, and then the cream solder is solidified by returning to room temperature, and then the metal electrode 221, the protruding electrode 212, and the metal piece 214 are laminated. The protrusion 214a is electrically and physically joined to the electrode 215a of the circuit board 215.
[0026]
In the next sixth step, as shown in FIG. 7, a semiconductor chip-like surface that does not require heat dissipation by using a normal surface mounting process on the surface mounting component mounting surface 215c facing the semiconductor element mounting surface 215b. The mounted electronic component 218 and the passive component 219 are joined to produce the mounted component 231.
[0027]
In the next seventh step, as shown in FIG. 8, in this embodiment, the component 230 is housed in the recess 232 with respect to the heat dissipation member 217 having the recess 232 and made of aluminum. The heat dissipation member 217 and the circuit board 215 are brought into close contact with each other so as to cover the concave portion 232. And in this state, it carries in into the metal mold | die 233 for shaping | molding heated by the heating apparatus 235 at 150 degreeC. Then, the insulating resin material 216 is poured into the space between the heat radiation member 217 and the circuit board 215, that is, the recess 232 by the transfer molding machine 234 by the transfer molding method. The insulating resin material 216 only needs to be a resin material that transmits heat generated by the semiconductor element 211. In this embodiment, a liquid thermosetting epoxy resin is used. The injected insulating resin material 216 is cured by the temperature of the mold 233 being heated. At this time, there is no generation of air voids in the insulating resin material 216 due to the pressure applied by the transfer molding machine 234, so that good insulation and heat dissipation can be obtained. After the insulating resin material 216 is cured, it is taken out from the mold 233, and the electronic circuit device 201 shown in FIG. 1 is completed.
[0028]
A method for forming the protruding electrode 212 on the first electrode 222 described above will be described with reference to FIGS. 9 to 11 show a method of forming the protruding electrode 212 on the first electrode 222 made of aluminum on the first surface 211 a of the semiconductor element 211. Here, reference numeral 250 denotes a bonding head that holds the metal ball 256 to be the protruding electrode 212, and reference numeral 251 denotes the metal ball via the bonding head 250 when the protruding electrode 212 is formed on the first electrode 222 by being connected to the bonding head 250. A pressing device that presses 256, a suction device 252 that is connected to the joining head 250 and sucks and holds the metal balls 256 on the joining head 250, and a 253 that is connected to the joining head 250 and forms the protruding electrode 212 on the first electrode 222. An ultrasonic vibration device 254 for causing ultrasonic vibration to act on the metal ball 256 is a heating stage that heats the semiconductor element 211 when the semiconductor element 211 is placed and the protruding electrode 212 is formed on the first electrode 222. , 255 are control devices that control the operation of each of these devices 250-254. In the present embodiment, the metal ball 256 is made of aluminum, and a suction hole 257 connected to the suction device 252 is formed in the center of the joining head 250. In addition, the opening portion of the suction hole 257 has a tapered portion 257 a for keeping the metal ball 256 at a fixed position and supporting the metal ball 256 reliably.
[0029]
In such a configuration, first, the semiconductor element 211 is fixed on the heating stage 254. The temperature condition of the heating stage 254 is set so that the surface temperature of the semiconductor element 211 is 150 ° C. to 300 ° C. Next, as shown in FIG. 10, the metal ball 256 is adsorbed and held on the tapered portion 257 a of the joining head 250 by the suction device 252. Next, with the pressing device 251, the bonding head 250 is lowered so that the metal ball 256 contacts the first electrode 222 on the semiconductor element 211, and the metal ball 256 is applied to the first electrode 222 at an appropriate load condition. Press at 258. For example, when the diameter of the metal ball 256 is 0.65 mm, the charging condition 258 is appropriately about 10 to 30 N. Further, the contact detection sensor installed in the bonding head 10 detects that the metal ball 256 has contacted the first electrode 222, and the ultrasonic vibration 259 is generated by the ultrasonic vibration device 253 from the moment of contact. And applied to the bonding head 250. In this embodiment, the frequency of the ultrasonic vibration 259 is 63.5 kHz, the output is 1 to 2 W, and the application time is 0.1 to 0.3 seconds. Metal bonding between the metal ball 256 and the first electrode 222 is generated by the action of the above-described load, heating, and ultrasonic vibration, and the bonding is performed and molded to form the protruding electrode 212. When the diameter of the metal ball 256 is 0.65 mm, the bonding strength is about 10 to 30N.
[0030]
Through the above steps, the formation of the protruding electrode 212 on the first electrode 222 on the semiconductor element 211 is completed as shown in FIG. As a next step, the protruding electrode 212 and the first electrode 222 are metal-plated so that the protruding electrode 212 made of aluminum can be soldered and to prevent foreign metals from entering the semiconductor element 211. . In this example, nickel and gold were plated by electroless plating. By the plating process, the surface of the protruding electrode 212 is covered with gold, and the gold-plated protruding electrode 212 that can be soldered is obtained. The first electrode 222 becomes the gold-plated first electrode 222 covered with gold plating.
[0031]
As described above, the metal plating is applied to the protruding electrode 212 and the first electrode 222 in the present embodiment, but this process may be omitted. That is, as shown in FIG. 12 and FIG. 13, in order to omit the metal plating step, a gold-plated metal ball 256-1 in which nickel and gold plating are formed by electrolysis on the metal ball 256 made of aluminum is used. Further, in order to obtain the effect of preventing the intrusion of dissimilar metals into the semiconductor element 211, a barrier metal 261 is formed inside the semiconductor element 211 and immediately below the first electrode 222. In this embodiment, TiN is used as the barrier metal 261. In addition, the operation of forming the protruding electrode 212 on the first electrode 222 with the gold-plated metal ball 256-1 is the same as described above.
In the method shown in FIGS. 12 and 13 using the gold-plated metal ball 256-1 and the barrier metal 261, the process of plating the semiconductor element 211 is not necessary, unlike the methods shown in FIGS. 9 to 11.
[0032]
Next, a method of forming the metal electrode for stacking 221 in the fourth step will be described.
By the same method as described with reference to FIGS. 9 and 10, as shown in FIGS. 14 and 15, a gold-plated metal ball 256-1 is placed on the gold-plated projecting electrode 212. To join. In this embodiment, as shown in FIG.
[0033]
Next, as shown in FIG. 1, for example, a step of bonding the second electrode 223 of the diode 211-d-2 on the protruding electrode 212 formed on the first electrode 222 of the diode 211-d-1 formed in the lower layer. This will be described with reference to FIGS. 16 and 17.
Similar to the above-described case, the lower semiconductor element 211-1 corresponding to the diode 211-d-1 is attached to the metal piece 214 by the high-temperature solder 213 a. Note that a gold-plated protruding electrode 212 is formed on the first electrode 222 of the semiconductor element 211-1. Preferably, the side surface 211c of the semiconductor element 211 perpendicular to the first surface 211a and the second surface 211b of the semiconductor element 211, in this case, the side surface 211c of the semiconductor element 211-1, is protected to protect the side surface 211c. Material 265 is applied. As the protective material 265, a junction coat resin is applied in this example. The protruding electrode 212 of the semiconductor element 211-1 and the gold-plated second electrode 223 of the upper semiconductor element 211-2 are bonded by the method including ultrasonic vibration described with reference to FIGS. 9 and 10. To do. The protective material 265 is also applied to the side surface of the semiconductor element 211-2.
Next, as shown in FIG. 17, the circuit board 215 is bonded to the protruding electrode 212 and the metal piece 214 of the semiconductor element 211-2 in the same manner as the operation described with reference to FIG. 6. After the cream solder is printed on the copper electrode 215a, a surface mounting technique is used in which the whole is heated and melted and bonded.
[0034]
According to the electronic circuit device 201 manufactured by the manufacturing method as described above, the electrical connection to the semiconductor element 211 is performed by the protruding electrode 212 or the like without using the conventional metal wire, so that the resistance and the floating inductance are reduced. In addition, the apparatus configuration can be reduced as compared with the conventional apparatus. Further, the semiconductor element 211 that generates heat, and the metal piece 214 to which the semiconductor element 211 is attached are molded with an insulating resin material 216 having a heat removal effect, the metal piece 214 is connected to the circuit board 215, and the insulating resin is used. Since the material 216 comes into contact with the semiconductor element mounting surface 215b of the circuit board 215, the heat generated by the semiconductor element 211 is transmitted through the insulating resin material 216 and dissipated from the heat radiating member 217, and the metal piece 214 and the insulating resin It is also transmitted to the circuit board 215 via the material 216 and is dissipated from the circuit board 215 as well. Therefore, it is possible to provide an electronic circuit device that is more excellent in heat dissipation than in the past.
[0035]
In the above-described embodiment, the metal piece 214 is L-shaped. However, the shape is not limited to this shape, and any shape may be used as long as the semiconductor element 211 and the circuit board 215 are electrically connected.
Further, the heat radiating member 217 has a shape having the recess 232 in the above-described embodiment, but is not limited to this shape.
In the above-described embodiment, the metal piece 214 and the semiconductor element 211 are electrically and physically connected by the high-temperature solder 213a, but may be connected by using the protruding electrode 212.
In the above-described embodiment, as described with reference to FIGS. 14 and 15, the semiconductor element 211 and the circuit board 215 are electrically connected by stacking the protruding electrodes 212 in a plurality of stages. It is not limited. However, the connection with a metal wire as in the conventional case is excluded.
[0036]
Further, in the above-described embodiment, an example in which the semiconductor element 211 is stacked in a plurality of layers as shown in FIG. 1 is taken as an example. However, as shown in FIG. 18, an electronic circuit device can be configured by one layer. .
Even in each of the modifications as described above, the above-described effects of the electronic circuit device 201 can be naturally obtained.
[0037]
【The invention's effect】
As described above in detail, according to the electronic circuit device of the first aspect of the present invention and the method of manufacturing the electronic circuit device of the second aspect, the electrical connection between the semiconductor element and the circuit board is made to the conventional wiring wire. By using a protruding electrode and a metal piece instead, stray inductance and conduction resistance can be reduced, and the circuit device can be reduced in size. Furthermore, the metal piece and the semiconductor element are molded with an insulating resin material, and the circuit board, the insulating resin material, and the heat dissipation member are integrated to increase heat dissipation from the semiconductor element as compared with the prior art. Can do.
[0038]
Further, when a plurality of semiconductor elements are stacked, the stray inductance and conduction resistance can be reduced as described above by connecting the stacked semiconductor elements with the protruding electrodes.
In addition, by performing gold plating on the first electrode and the second electrode of the semiconductor element and the protruding electrode, it is possible to perform solder bonding even when these materials are made of aluminum.
In addition, by providing a barrier metal immediately below the first electrode and the second electrode of the semiconductor element, it is not necessary to apply gold plating to the semiconductor element, particularly the first electrode and the second electrode.
In addition, by providing a protective material on the side surface of the semiconductor element, damage to the semiconductor element can be prevented in the bonding process of the semiconductor element.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an electronic circuit device according to an embodiment of the present invention.
FIG. 2 is a circuit diagram of the electronic circuit device shown in FIG.
FIG. 3 is a view for explaining one step in the method of manufacturing the electronic circuit device shown in FIG. 1, and is a view showing a state in which a protruding electrode is formed on a semiconductor element.
4 is a view for explaining one step in the method of manufacturing the electronic circuit device shown in FIG. 1, and is a view showing a state in which a semiconductor element on which a protruding electrode is formed is attached to a metal piece. FIG.
5 is a view for explaining one step in the method of manufacturing the electronic circuit device shown in FIG. 1, and is a view showing a state in which semiconductor elements are stacked. FIG.
6 is a view for explaining one step in the method of manufacturing the electronic circuit device shown in FIG. 1, and is a view showing a state in which a circuit board is attached to the state shown in FIG. 5;
7 is a view for explaining one step in the method of manufacturing the electronic circuit device shown in FIG. 1, and is a view showing a state where electronic components are mounted on the circuit board of FIG.
8 is a view for explaining one step in the method of manufacturing the electronic circuit device shown in FIG. 1, and is a view showing a state where the mounted component shown in FIG. 7 is loaded in a mold.
9 is a view for explaining a process of forming a protruding electrode on an electrode of a semiconductor element in the method for manufacturing the electronic circuit device shown in FIG. 1, and showing a state in which a metal ball is held by a bonding head. is there.
10 is a view for explaining a step of forming a protruding electrode on an electrode of a semiconductor element in the method of manufacturing the electronic circuit device shown in FIG. 1, and showing a state in which the metal ball is pressed onto the electrode. It is.
11 is a view for explaining a step of forming a protruding electrode on an electrode of a semiconductor element in the method for manufacturing the electronic circuit device shown in FIG. 1, and is a view showing a state in which the protruding electrode is formed on the electrode.
12 is a view for explaining another process of forming a protruding electrode on an electrode of a semiconductor element in the method for manufacturing the electronic circuit device shown in FIG. 1; FIG.
13 is a view showing a state in which a protruding electrode is formed in the protruding electrode forming step shown in FIG. 12. FIG.
14 is a view for explaining a step of further forming a protruding electrode on the protruding electrode of the semiconductor element in the method of manufacturing the electronic circuit device shown in FIG. 1, and shows a state in which the metal ball is held by the bonding head. FIG.
15 is a view showing a state where protruding electrodes are formed in the protruding electrode forming step shown in FIG. 14;
16 is a view for explaining a step of further bonding a semiconductor element onto the protruding electrode of the semiconductor element in the method of manufacturing the electronic circuit device shown in FIG. 1, and another semiconductor element is held by the bonding head. It is a figure which shows a state.
17 is a view showing a state in which semiconductor elements are stacked in the step shown in FIG. 16;
FIG. 18 is a view showing a modification of the method for manufacturing the electronic circuit device shown in FIG. 1 and showing a case where there is only one semiconductor element.
FIG. 19 is a diagram showing a configuration of a conventional electronic circuit device.
[Explanation of symbols]
201 ... electronic circuit device, 211 ... semiconductor element, 211a ... first surface,
211b ... second surface, 211c ... side surface, 212 ... projection electrode, 214 ... metal piece,
215 ... Circuit board, 215b ... Semiconductor element mounting surface, 216 ... Insulating resin material,
217 ... Heat dissipation member, 222 ... First electrode, 223 ... Second electrode,
261 ... barrier metal, 265 ... protective material.

Claims (7)

回路基板と電気的に接続される金属片（２１４）と、
互いに対向する第１面及び第２面（２１１ａ、２１１ｂ）に電極（２２２、２２３）を有し上記回路基板の半導体素子実装面（２１５ｂ）と上記金属片との間に積層して配置されて上記回路基板に実装される複数の半導体素子（２１１）と、
上記第１面の第１電極（２２２）に電気的に接続される突起電極（２１２）と、を備え、ここで、
上記金属片には、上記半導体素子の上記第２面の第２電極（２２３）が電気的に接続され、
上記回路基板の半導体素子実装面には、上記突起電極が電気的に接続され、該突起電極を介して上記半導体素子の上記第１電極（２２２）と電気的に接続され、
上記積層された半導体素子同士間において上記突起電極は、上記第１電極及び上記第２電極を電気的に接続し、さらに、
上記半導体素子実装面（２１５ｂ）に上記突起電極及び上記金属片を介して実装された上記半導体素子及び上記金属片を包囲してかつ上記回路基板と一体的に設けられ上記半導体素子が発する熱を伝達する絶縁樹脂材（２１６）と、
上記絶縁樹脂材の外表面に設けられ上記絶縁樹脂材を介して上記熱を放散する放熱部材（２１７）と、
を備えたことを特徴とする電子回路装置。A metal piece (214) electrically connected to the circuit board;
The first surface and the second surface (211a, 211b) facing each other have electrodes (222, 223), and are disposed between the semiconductor element mounting surface (215b) of the circuit board and the metal piece. A plurality of semiconductor elements (211) mounted on the circuit board;
A protruding electrode (212) electrically connected to the first electrode (222) of the first surface, wherein:
A second electrode (223) on the second surface of the semiconductor element is electrically connected to the metal piece,
The protruding electrode is electrically connected to the semiconductor element mounting surface of the circuit board, and is electrically connected to the first electrode (222) of the semiconductor element via the protruding electrode,
Between the stacked semiconductor elements, the protruding electrode electrically connects the first electrode and the second electrode, and
The semiconductor element mounting surface (215b) surrounds the semiconductor element and the metal piece mounted via the protruding electrode and the metal piece, and is provided integrally with the circuit board and generates heat generated by the semiconductor element. An insulating resin material (216) for transmission;
A heat dissipating member (217) provided on the outer surface of the insulating resin material and dissipating the heat through the insulating resin material;
An electronic circuit device comprising: 上記第１電極、上記第２電極、及び上記突起電極は、アルミニウムにてなり、金メッキされている、請求項１記載の電子回路装置。  The electronic circuit device according to claim 1, wherein the first electrode, the second electrode, and the protruding electrode are made of aluminum and plated with gold. 上記第１電極、上記第２電極、及び上記突起電極は、アルミニウムにてなり、上記突起電極は、金メッキされており、上記半導体素子は、当該半導体素子内への異種金属の侵入を防止するバリア金属（２６１）を上記第１電極及び上記第２電極の直下に有する、請求項１記載の電子回路装置。  The first electrode, the second electrode, and the protruding electrode are made of aluminum, the protruding electrode is gold-plated, and the semiconductor element is a barrier that prevents foreign metal from entering the semiconductor element. The electronic circuit device according to claim 1, further comprising a metal (261) immediately below the first electrode and the second electrode. 上記半導体素子は、上記第１面及び上記第２面に直交する当該半導体素子の側面（２１１ｃ）に、当該半導体素子を保護する保護材（２６５）を有する、請求項１から３のいずれかに記載の電子回路装置。  The said semiconductor element has a protective material (265) which protects the said semiconductor element in the side surface (211c) of the said semiconductor element orthogonal to the said 1st surface and the said 2nd surface, In any one of Claim 1 to 3 The electronic circuit device described. 互いに対向する第１面及び第２面（２１１ａ、２１１ｂ）に電極（２２２、２２３）を有する半導体素子（２１１）を複数層にて回路基板（２１５）に実装してなる電子回路装置の製造方法であって、
上記第１面の第１電極（２２２）に突起電極（２１２）を電気的に接続し、
上記回路基板に電気的に接続される金属片（２１４）に、上記第２面の第２電極（２２３）を接続し、さらに複数の上記半導体素子間では上記突起電極にて上記第１電極及び上記第２電極を電気的に接続することで上記複数の半導体素子を積層し、
上記回路基板の半導体素子実装面（２１５ｂ）に上記突起電極及び上記金属片を介して上記半導体素子を実装した後、該半導体素子が発する熱を伝達する絶縁樹脂材（２１６）を、該半導体素子及び上記金属片を包囲してかつ上記回路基板及び上記熱を放散する放熱部材（２１７）と一体的に上記半導体素子実装面側に設ける、
ことを特徴とする電子回路装置の製造方法。A method of manufacturing an electronic circuit device, wherein a semiconductor element (211) having electrodes (222, 223) on a first surface and a second surface (211a, 211b) facing each other is mounted on a circuit board (215) in a plurality of layers. Because
Electrically connecting the protruding electrode (212) to the first electrode (222) on the first surface;
The second electrode (223) on the second surface is connected to the metal piece (214) electrically connected to the circuit board, and the first electrode and the projecting electrode are connected between the plurality of semiconductor elements. The plurality of semiconductor elements are stacked by electrically connecting the second electrodes,
After mounting the semiconductor element on the semiconductor element mounting surface (215b) of the circuit board via the protruding electrode and the metal piece, an insulating resin material (216) that transmits heat generated by the semiconductor element is formed on the semiconductor element. And provided on the semiconductor element mounting surface side integrally with the circuit board and the heat dissipating member (217) for dissipating the heat, surrounding the metal piece.
A method for manufacturing an electronic circuit device. 上記放熱部材は、上記絶縁樹脂材の外表面を包囲する凹形状を有する、請求項１から４のいずれかに記載の電子回路装置。 5. The electronic circuit device according to claim 1, wherein the heat dissipation member has a concave shape surrounding an outer surface of the insulating resin material . 上記放熱部材は、上記半導体素子及び上記金属片を包囲する凹形状を有する、請求項５記載の電子回路装置の製造方法。 6. The method of manufacturing an electronic circuit device according to claim 5, wherein the heat dissipation member has a concave shape surrounding the semiconductor element and the metal piece .
JP2002070401A 2002-03-14 2002-03-14 Electronic circuit device having double-sided electrode semiconductor element and method of manufacturing the electronic circuit device Expired - Fee Related JP3935381B2 (en)

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