JP3855061B2 - Si基板上への化合物半導体薄膜形成方法 - Google Patents
Si基板上への化合物半導体薄膜形成方法 Download PDFInfo
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- JP3855061B2 JP3855061B2 JP2003314912A JP2003314912A JP3855061B2 JP 3855061 B2 JP3855061 B2 JP 3855061B2 JP 2003314912 A JP2003314912 A JP 2003314912A JP 2003314912 A JP2003314912 A JP 2003314912A JP 3855061 B2 JP3855061 B2 JP 3855061B2
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- 239000000758 substrate Substances 0.000 title claims description 89
- 238000000034 method Methods 0.000 title claims description 51
- 150000001875 compounds Chemical class 0.000 title claims description 49
- 239000004065 semiconductor Substances 0.000 title claims description 48
- 239000010409 thin film Substances 0.000 title claims description 45
- 229910005542 GaSb Inorganic materials 0.000 claims description 53
- 229910017115 AlSb Inorganic materials 0.000 claims description 42
- 239000013078 crystal Substances 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 16
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 13
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
2 バッファ層(AlSb)
2a 第1バッファ層(InSb)
2b 第2バッファ層(AlSb)
3 薄膜(GaSb)
4 厚膜(GaSb)
6 量子井戸構造
6a 量子井戸
6b 障壁層
Claims (3)
- Si基板上にAlGaAsSb系材料の化合物半導体の薄膜を一層もしくは多層に形成する、Si基板上への化合物半導体薄膜形成方法であって、
Si基板上に、厚さが5分子層以下のInSbよりなる第1バッファ層を形成し、該第1バッファ層上に厚さが1分子層〜100nmであるAlSbよりなる第2バッファ層を形成し、該第2バッファ層上に化合物半導体の薄膜を形成するようにしたことを特徴とするSi基板上への化合物半導体薄膜形成方法。 - 上記第2バッファ層上には、GaSb膜を形成するようにしたことを特徴とする請求項1に記載のSi基板上への化合物半導体薄膜形成方法。
- 結晶成長温度を300℃〜560℃の間の任意の温度に設定し、Si基板上への第1バッファ層形成と、該第1バッファ層上への第2バッファ層形成と、該第2バッファ層上へのGaSb膜形成を行うようにしたことを特徴とする請求項2に記載のSi基板上への化合物半導体薄膜形成方法。
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JP2005085916A JP2005085916A (ja) | 2005-03-31 |
JP3855061B2 true JP3855061B2 (ja) | 2006-12-06 |
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US8183556B2 (en) | 2005-12-15 | 2012-05-22 | Intel Corporation | Extreme high mobility CMOS logic |
US7573059B2 (en) * | 2006-08-02 | 2009-08-11 | Intel Corporation | Dislocation-free InSb quantum well structure on Si using novel buffer architecture |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US7851780B2 (en) | 2006-08-02 | 2010-12-14 | Intel Corporation | Semiconductor buffer architecture for III-V devices on silicon substrates |
JP4922979B2 (ja) * | 2008-03-28 | 2012-04-25 | 旭化成エレクトロニクス株式会社 | 半導体基板 |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
JP2010225870A (ja) * | 2009-03-24 | 2010-10-07 | Toshiba Corp | 半導体素子 |
KR101351987B1 (ko) * | 2012-10-24 | 2014-01-17 | 한국과학기술연구원 | 격자 부정합 해소층을 이용한 화합물 반도체 기판 및 그 제조방법 |
EP2804203A1 (en) | 2013-05-17 | 2014-11-19 | Imec | III-V device and method for manufacturing thereof |
JP6153224B2 (ja) * | 2013-09-20 | 2017-06-28 | 国立研究開発法人物質・材料研究機構 | 表面の平坦性および結晶構造の完全性に優れたGaSb/InAs/Si(111)構造とその形成方法、並びにその構造を用いたMOSデバイスおよび赤外線検出デバイス |
CN104518054B (zh) * | 2014-12-24 | 2016-08-17 | 哈尔滨工业大学 | 在硅衬底上变温生长InAs/GaSb超晶格红外探测器GaSb缓冲层的方法 |
JP2016174071A (ja) * | 2015-03-17 | 2016-09-29 | 日本電信電話株式会社 | 結晶成長方法 |
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