JP3845634B2 - Cmosイメージセンサーの製造方法 - Google Patents
Cmosイメージセンサーの製造方法 Download PDFInfo
- Publication number
- JP3845634B2 JP3845634B2 JP2003432896A JP2003432896A JP3845634B2 JP 3845634 B2 JP3845634 B2 JP 3845634B2 JP 2003432896 A JP2003432896 A JP 2003432896A JP 2003432896 A JP2003432896 A JP 2003432896A JP 3845634 B2 JP3845634 B2 JP 3845634B2
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- photoresist
- forming
- image sensor
- microlens
- cmos image
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 47
- 230000002093 peripheral effect Effects 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
しかし、前記CMOSイメージセンサーの場合、根本的にCMOSロジック回路を除くことができないため、全体的に限られた面積下で光感知手段の面積を大きくするための努力には限界がある。
これによって、CMOSイメージセンサーの品質を左右するほど、マイクロレンズの性能の重要性が大きくなりつつある。
本発明は上記の問題点を解決するために案出したものであって、基板の全体にわたって均一な形状のマイクロレンズ等を形成することのできるCMOSイメージセンサーの製造方法を提供することに目的がある。
好ましくは、前記平坦化層形成用のフォトレジストは1.3〜3μmの厚さで形成することができる。
好ましくは、前記マイクロレンズ形成用のフォトレジストを1.1〜1.3μmの厚さで形成することができる。
好ましくは、前記マイクロレンズ形成用のフォトレジストはネガティブタイプのフォトレジストであることができる。
カラーフィルタ層上に順次に形成される平坦化層及びマイクロレンズの形成において、前記平坦化層形成用のフォトレジストが周辺領域及びセル領域の全体に存在するようにした状態で、マイクロレンズ形成用のフォトレジストをパターニングした後、平坦化層形成用のフォトレジストをパターニングして平坦化層を形成することによって、周辺領域とセル領域との間の境界部分に不規則的な段差が生ずることを未然に防止し、後続の工程で形成されるマイクロレンズ等が均一な形状を有するようにすることができる。これによって、CMOSイメージセンサーの信頼性を確保することができる。
続いて、図3fに示したように、150℃程度の温度でベーキング(baking)を進行すると、前記複数の直六面体形状のフォトレジスト、即ち単位マイクロレンズの形体が溶け落ちて膨らんでいるような形状のマイクロレンズ29が形成される。
Claims (6)
- 半導体の基板上にカラーフィルタ層を形成し、
前記カラーフィルタ層と前記半導体の基板上に平坦化層形成用のフォトレジストを塗布し、
前記平坦化層形成用のフォトレジストを選択的に露光し、
前記平坦化層形成用のフォトレジスト上にマイクロレンズ形成用のフォトレジストを塗布し、
前記マイクロレンズ形成用のフォトレジストを選択的に露光し、
前記平坦化層形成用のフォトレジストの露光しない部分、および前記マイクロレンズ形成用のフォトレジストの露光した部分を除去し、
複数のマイクロレンズの形体に対してベーキング工程を施し、複数のマイクロレンズを形成する
ことを特徴とする、CMOSイメージセンサーの製造方法。 - 前記平坦化層形成用のフォトレジストは1.3〜3μmの厚さで形成することを特徴とする、請求項1記載のCMOSイメージセンサーの製造方法。
- 前記マイクロレンズ形成用のフォトレジストを1.1〜1.3μmの厚さで形成することを特徴とする、請求項1記載のCMOSイメージセンサーの製造方法。
- 前記平坦化層形成用のフォトレジストはネガティブタイプ(negative type)のフォトレジストであることを特徴とする、請求項1または請求項2記載のCMOSイメージセンサーの製造方法。
- 前記マイクロレンズ形成用のフォトレジストはポジティブタイプ(positive type)のフォトレジストであることを特徴とする、請求項1または請求項2記載のCMOSイメージセンサーの製造方法。
- 前記マイクロレンズ形成用のフォトレジストに対する露光工程の遂行時、露光エネルギーを300〜500mJにすることを特徴とする、請求項1記載のCMOSイメージセンサーの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020087351A KR100972059B1 (ko) | 2002-12-30 | 2002-12-30 | 마이크로 렌즈의 도포 균일성을 개선한 씨모스 이미지 센서의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004214672A JP2004214672A (ja) | 2004-07-29 |
JP3845634B2 true JP3845634B2 (ja) | 2006-11-15 |
Family
ID=32709762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003432896A Expired - Fee Related JP3845634B2 (ja) | 2002-12-30 | 2003-12-26 | Cmosイメージセンサーの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7094519B2 (ja) |
JP (1) | JP3845634B2 (ja) |
KR (1) | KR100972059B1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100672698B1 (ko) * | 2004-12-24 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그의 제조방법 |
TWI260093B (en) | 2005-01-25 | 2006-08-11 | Au Optronics Corp | Thin film transistor with microlens structure, forming method thereof and TFT display panel comprising thereof |
US8389920B2 (en) * | 2008-03-13 | 2013-03-05 | Aptina Imaging Corporation | Method and apparatus for breaking surface tension during a recessed color filter array process |
EP2624172A1 (en) * | 2012-02-06 | 2013-08-07 | STMicroelectronics (Rousset) SAS | Presence detection device |
WO2018041341A1 (en) * | 2016-08-30 | 2018-03-08 | Telefonaktiebolaget Lm Ericsson (Publ) | Method and apparatus for optical wireless communication |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
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US5316640A (en) * | 1991-06-19 | 1994-05-31 | Matsushita Electric Industrial Co., Ltd. | Fabricating method of micro lens |
JPH06349728A (ja) | 1993-06-14 | 1994-12-22 | Sony Corp | レジストパターンの形成方法 |
US6021172A (en) * | 1994-01-28 | 2000-02-01 | California Institute Of Technology | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter |
US5841126A (en) * | 1994-01-28 | 1998-11-24 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
JPH081809A (ja) * | 1994-06-22 | 1996-01-09 | Casio Comput Co Ltd | マイクロレンズの形成方法 |
US5739548A (en) * | 1995-05-02 | 1998-04-14 | Matsushita Electronics Corporation | Solid state imaging device having a flattening layer and optical lenses |
JP2802733B2 (ja) | 1995-06-07 | 1998-09-24 | エルジイ・セミコン・カンパニイ・リミテッド | カラー固体撮像素子及びその製造方法 |
US5990506A (en) * | 1996-03-20 | 1999-11-23 | California Institute Of Technology | Active pixel sensors with substantially planarized color filtering elements |
FI112419B (fi) * | 1996-06-06 | 2003-11-28 | Nokia Corp | Menetelmä tiedonsiirron salaamiseksi |
JPH10294826A (ja) | 1997-04-18 | 1998-11-04 | Sharp Corp | カラーイメージセンサ |
US5886659A (en) * | 1996-08-21 | 1999-03-23 | California Institute Of Technology | On-focal-plane analog-to-digital conversion for current-mode imaging devices |
US5915021A (en) * | 1997-02-07 | 1999-06-22 | Nokia Mobile Phones Limited | Method for secure communications in a telecommunications system |
US6005619A (en) * | 1997-10-06 | 1999-12-21 | Photobit Corporation | Quantum efficiency improvements in active pixel sensors |
US6324402B1 (en) * | 1997-10-07 | 2001-11-27 | Nortel Dasa Network System Gmbh & Co. Kg | Integration scheme for a mobile telephone |
US6580906B2 (en) * | 1997-12-10 | 2003-06-17 | Intel Corporation | Authentication and security in wireless communication system |
US6119020A (en) * | 1997-12-16 | 2000-09-12 | Motorola, Inc. | Multiple user SIM card secured subscriber unit |
DE59900243D1 (de) * | 1998-02-16 | 2001-10-11 | Swisscom Mobile Ag | Identifizierungskarte und verrechnungsverfahren mit einer identifizierungskarte |
US5853960A (en) * | 1998-03-18 | 1998-12-29 | Trw Inc. | Method for producing a micro optical semiconductor lens |
US6484260B1 (en) * | 1998-04-24 | 2002-11-19 | Identix, Inc. | Personal identification system |
US6223290B1 (en) * | 1998-05-07 | 2001-04-24 | Intel Corporation | Method and apparatus for preventing the fraudulent use of a cellular telephone |
KR20000041461A (ko) * | 1998-12-22 | 2000-07-15 | 김영환 | 개선된 이미지센서 제조방법 |
KR100477784B1 (ko) * | 2000-08-31 | 2005-03-22 | 매그나칩 반도체 유한회사 | 트렌치 내부의 공기로 이루어지는 집광층을 구비하는이미지 센서 및 그 제조 방법 |
JP2002178156A (ja) | 2000-12-18 | 2002-06-25 | Aiseihaado Kk | プラズマ粉体溶接を用いた溶接部材及びその溶接方法 |
US6861207B2 (en) * | 2003-06-30 | 2005-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating microlens with lithographic process |
-
2002
- 2002-12-30 KR KR1020020087351A patent/KR100972059B1/ko not_active IP Right Cessation
-
2003
- 2003-12-24 US US10/746,703 patent/US7094519B2/en not_active Expired - Lifetime
- 2003-12-26 JP JP2003432896A patent/JP3845634B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7094519B2 (en) | 2006-08-22 |
KR20040060544A (ko) | 2004-07-06 |
US20040142568A1 (en) | 2004-07-22 |
KR100972059B1 (ko) | 2010-07-22 |
JP2004214672A (ja) | 2004-07-29 |
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