JP3834254B2 - Semiconductor device, fixing structure thereof, and fixing method of semiconductor device - Google Patents

Semiconductor device, fixing structure thereof, and fixing method of semiconductor device Download PDF

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JP3834254B2
JP3834254B2 JP2002102487A JP2002102487A JP3834254B2 JP 3834254 B2 JP3834254 B2 JP 3834254B2 JP 2002102487 A JP2002102487 A JP 2002102487A JP 2002102487 A JP2002102487 A JP 2002102487A JP 3834254 B2 JP3834254 B2 JP 3834254B2
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cooling device
semiconductor device
heat sink
fixing
gap
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JP2003297990A (en
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康己 上貝
弘 西堀
貴信 吉田
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、放熱部材を介して半導体素子の発熱を冷却装置に伝える半導体装置および該半導体装置の冷却装置への固定構造ならびに半導体装置の冷却装置への固定方法に関する。
【０００２】
【従来の技術】
従来、放熱板を介して半導体素子の発熱を冷却装置に伝える方法として、放熱板と冷却装置間に熱伝導性を有するゲル状のグリースあるいはシート状の部材を塗布または挿入し、半導体装置を固定ねじで冷却装置に固定する方法があった。このような半導体装置および固定方法は、例えば特開平４−２３３７５２号公報に示されている。
【０００３】
放熱板と冷却装置の密着性を高くするために、半導体装置は多数のねじで固定されるが、放熱板に撓みがある場合や、冷却装置の半導体装置の取り付け面に反りがある場合、ねじ固定にともなう放熱板の撓み変形により、放熱板に固着されている絶縁部材や半導体素子が破損することが懸念される。
【０００４】
また、温度変動が生じた場合、半導体装置の熱変形がねじ固定によって拘束されるため、半導体装置における放熱板へのはんだ接合部の熱応力（ひずみ）が非固定の状態に比較して増大し、その結果、温度サイクルに対する半導体装置の寿命が低下するという問題があった。
【０００５】
他方、半導体装置のねじ固定部近傍に溝を加工して、ねじ固定にともなう半導体素子への作用力を緩和する半導体デバイスが、たとえば特開昭６３−３１１４４号公報に示されている。
【０００６】
【発明が解決しようとする課題】
この半導体デバイスにおいては、ねじ固定部近傍に溝部を設けて低剛性とすることにより、ねじ固定にともなう半導体素子への応力を緩和させている。
【０００７】
しかし、半導体装置の熱変形（撓み）については拘束された状態となるため、放熱板はんだ接合部の熱応力（ひずみ）が非固定の状態に比較して増加する。その結果、温度サイクルに対する半導体装置の寿命（信頼性）が低下するという問題があった。
【０００８】
また、半導体装置が厳しい振動環境下で使用される場合、十分なねじ締め力が必要となるが、従来の方法では、ねじ締付力を増加させるほど半導体装置の撓みに対する拘束力が大きくなるため、信頼性の観点から、必要十分な締付力を付与できず、振動環境下でねじの緩みの懸念があった。
【０００９】
本発明は、上記の課題を解決するためになされたものであり、温度サイクルに対する半導体装置の寿命短縮を抑制でき、厳しい振動環境下で使用可能な半導体装置、冷却装置への半導体装置の固定構造および固定方法を提供することを目的とする。
【００１０】
【課題を解決するための手段】
本発明に係る半導体装置は、冷却装置に固定される半導体装置であって、半導体素子と、該半導体素子を搭載し、半導体素子で発生した熱を放散する放熱板と、該放熱板と冷却装置との間であって放熱板の中央部に間隙を形成し、冷却装置への固定用ねじを受け入れる（挿通する）穴を有する凸部とを備え、該間隙によって形成される、該放熱板と冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超える。該凸部は、放熱板の一部を突出させて形成してもよく、別部材を放熱板に固定して設けてもよい。また、穴の周囲に凸部を形成してもよい。
【００１１】
上記のように凸部を設けることにより、半導体装置の動作時における半導体素子の発熱や、半導体装置の使用環境の温度変動にともなう放熱板の撓みによる放熱板裏面と冷却装置表面の干渉を防ぐことができる。また、凸部にねじを受け入れる穴を設けることにより、冷却装置へのねじ固定による半導体装置の拘束の程度を従来よりも格段に軽減することができる。
【００１２】
本発明に係る半導体装置の固定構造は、放熱板を有する半導体装置の冷却装置への固定構造であって、冷却装置と放熱板の少なくとも一方に、放熱板と冷却装置との間であって放熱板の中央部に間隙を形成するとともに冷却装置への固定用ねじを受け入れる穴を有する凸部を設け、前記間隙によって形成される、前記放熱板と前記冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超え、上記穴を通して冷却装置に固定ねじを螺着することにより半導体装置を冷却装置に固定する。なお、上記凸部は、冷却装置と放熱板の少なくとも一方の一部で形成してもよいが、冷却装置および放熱板とは別部材で形成してもよい。また、穴の周囲に凸部を形成してもよい。
【００１３】
冷却装置と放熱板の少なくとも一方に上記のような凸部を設け、該凸部に固定ねじを挿通して半導体装置を冷却装置に固定することにより、放熱板と冷却装置との間に間隙を形成するとともに固定ねじによる半導体装置の拘束の程度を軽減することができる。
【００１４】
本発明に係る半導体装置の固定方法は、１つの局面では、放熱板を有する半導体装置を冷却装置に固定する方法であって、放熱板と冷却装置との間であって放熱板の中央部に間隙を形成する凸部を設け、前記間隙によって形成される、前記放熱板と前記冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超え、該凸部を挿通するように冷却装置に固定ねじを螺着することにより、半導体装置を冷却装置に固定する。なお、上記凸部は、冷却装置と放熱板の少なくとも一方の一部で形成してもよいが、冷却装置および放熱板とは別部材で形成してもよい。
【００１５】
本発明に係る半導体装置の固定方法は、他の局面では、放熱板と冷却装置との間であって、放熱板の中央部に間隙を形成する間隙形成部材を設置し、前記間隙によって形成される、前記放熱板と前記冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超え、該間隙形成部材を挿通して冷却装置に固定ねじを螺着することにより、半導体装置を冷却装置に固定する。なお、間隙形成部材としては、たとえばワッシャ、円形断面を有するワイヤー環、矩形断面を有するワイヤー環等を使用することができる。
【００１６】
上記のいずれの局面の場合も、凸部を通して冷却装置に固定ねじを螺着して半導体装置を冷却装置に固定するので、放熱板と冷却装置との間に間隙を形成するとともに固定ねじによる半導体装置の拘束の程度を軽減することができる。
【００１７】
【発明の実施の形態】
以下、本発明の実施の形態について図１〜図１４を用いて説明する。
【００１８】
（実施の形態１）
図１および図２に示すように、本発明の半導体装置１は、放熱板２と、筐体３０と、半導体素子３３とを有し、固定ねじ９により冷却装置４に固定される。
【００１９】
放熱板２は凸部７ａを有し、該凸部７ａに固定ねじ９を挿通する。凸部７ａの内側には間隙が形成され、この間隙内にグリース１５を塗布する。放熱板２上に放熱板はんだ接合部１１を介して絶縁部材１２を実装する。絶縁部材１２は、表裏面に金属パターン３４を有し、表面側の金属パターン３４上に素子はんだ接合部３５を介して半導体素子３３を実装する。
【００２０】
筐体３０内には複数の絶縁部材１２および半導体素子３３が収容され、図２の例では半導体素子３３間を導線３２で接続している。また、筐体３０上には電極端子３１の一部が延在する。
【００２１】
本実施の形態１では、上記のように半導体装置１の放熱板２に凸部７ａを設け、放熱板２における冷却装置４への取付面の固定ねじ９の周辺部を凸状としたことを重要な特徴とする。より詳細には、図３および図４に示すように、放熱板２の固定ねじを受け入れる通し穴３の周辺を凸状にし、通し穴３を凸部７ａで囲んでいる。通し穴３は複数設けられ、各通し穴３ごとに凸部７ａを設けている。なお、図３および図４に示す例では凸部７ａは環状であるが、凸部７ａを通し穴３の周囲に断続的に形成してもよい。
【００２２】
本実施の形態１によれば、半導体装置１は、固定ねじ９により冷却装置４に放熱板２の凸部７ａの部分で固定される。このとき、放熱板２の中央部と冷却装置４の間には、グリース１５が塗布され、半導体装置１の熱を冷却装置４に伝える。ねじ固定時のグリース１５の厚みは凸部７ａの高さで決定され、絶縁部材１２の実装位置直下では、放熱板２は冷却装置４の表面と干渉していない。
【００２３】
なお、上記のグリース１５の代わりに、たとえば弾性変形により放熱板２の変形量を吸収可能で伝熱特性に優れた弾性部材等を使用することができる。
【００２４】
半導体装置１は、半導体素子３３の発熱のほか、使用環境の温度変動によって熱変形を生じる。一般に、放熱板１には熱伝導率の大きい銅やアルミニウム材が用いられ、絶縁部材１２にはセラミックスが用いられる。銅およびアルミニウムの線膨張係数（α）は各々１７×１０-6（／℃）および２３×１０-6（／℃）程度であり、絶縁部材１２のそれは、３〜１０×１０-6（／℃）であって、相互の線膨張係数の不整合のために、図１３に示すように、放熱板２には撓みが生じる。
【００２５】
その際、放熱板２と冷却装置４の間にはグリース１５が塗布されているが、凸部７ａの高さ相当の間隔が存在するため、放熱板２が撓んだ場合、面間隔Ｄが撓みで減少するものの放熱板２の撓みは妨げられない。
【００２６】
図１４に面間隔Ｄの条件に対する放熱板はんだ接合部１１の発生ひずみの関係を有限要素解析を用いて計算した結果を示す。面間隔Ｄが０の場合に比較して、面間隔Ｄの存在する条件では、ひずみは大幅に低減することがわかる。このため、放熱板はんだ接合部１１や絶縁部材１２および半導体素子３３に対するねじ固定の影響を最小限に抑えることができる。
【００２７】
また、冷却装置４との固定が凸部７ａの部分で行われるため、ねじ固定による半導体装置１の拘束の程度を軽減することができ、使用ねじに対する規定トルクでねじを締め付けることができる。したがって、半導体装置１が厳しい振動環境に置かれてもねじ部の緩みは生じない。
【００２８】
放熱板２の裏面からの凸部７ａの高さは、グリース１５の層の熱抵抗を抑える必要から、低い方が望ましい。例えば、０．０１ｍｍ以上０．２ｍｍ以下の高さが、放熱板２の撓み量およびグリース１５の層の熱抵抗の点から最適である。
【００２９】
以上より、冷却装置４へのねじ固定時に、温度変動にともなう放熱板２の熱変形（撓み）が生じても、放熱板２の熱変形が妨げられることがなくなるため、放熱板はんだ接合部１１や絶縁部材１２および半導体素子３３の熱応力が増加することなく、放熱板はんだ接合部１１の熱疲労寿命の低下や、半導体素子３３および絶縁部材１２の破損を防止できる。
【００３０】
（実施の形態２）
次に、本発明の実施の形態２について、図５を用いて説明する。図１〜図４の例においては放熱板２の凸部７ａは円形状に通し穴３ごとに独立して突出しているが、図５に示すように放熱板２の中央部の撓みを妨げなければ放熱板２の凸部７ｂを直線形状としてもよい。すなわち、放熱板２の中央部の両側に複数の通し穴３を囲むように一組の直線状の凸部７ａを形成してもよい。本例の場合には、実施の形態１と同様の効果が得られることに加え、実施の形態１よりも凸部７ａの加工が容易になる。
【００３１】
（実施の形態３）
次に、本発明の実施の形態３について、図６を用いて説明する。図６に示すように、放熱板２の中央部領域を囲むように放熱板２に凸部７ｃを設けてもよい。この場合にも、実施の形態１と同様の効果が得られるのみならず、実施の形態１よりも凸部７ａの加工は容易となる。それに加え、グリース１５が放熱板２の外部へはみ出すことを防ぐことができる。
【００３２】
（実施の形態４）
次に、本発明の実施の形態４について、図７を用いて説明する。図１の構造においては、放熱板２に凸部７ａを加工して設けたが、図７に示すように、放熱板２とは別製のワッシャ２０ａをねじ固定部の放熱板２と冷却装置４の間に設置してもよい。
【００３３】
それにより、実施の形態１と同様の効果が得られる上、凸部７ａの加工を省略することができ、放熱板２のコストを抑えることができる。
【００３４】
ワッシャ２０ａの平面形状の例を図８（ａ）〜（ｃ）に示す。図８（ａ）に示すように、ワッシャ２０ａの平面形状は、典型的には完全なリング状であるが、矩形等の任意形状とすることができる。また、図８（ｂ）に示すようにリングの一部を切断した形状のワッシャ２０ｂや、図８（ｃ）に示すようにリングを複数に分割した形状のワッシャ２０ｃを採用することもできる。
【００３５】
なお、固定ねじ９を受け入れることができ、かつ放熱板２と冷却装置４との間に間隙を形成することができる部材（間隙形成部材）であれば、上記のワッシャ２０ａ以外の任意の部材を採用することができる。
【００３６】
（実施の形態５）
次に、本発明の実施の形態５について、図９および図１０を用いて説明する。図１の構造においては半導体装置１の放熱板２に凸部７ａを設けているが、図９および図１０に示すように、冷却装置４における半導体装置１の取付面に凸部８ａを設けてもよい。該凸部８ａは、固定ねじ９が螺着される各ねじ穴６を囲むように設けられる。この場合にも、実施の形態１と同様の効果を得ることができる。なお、図１０において、１３は冷媒通路を示し、１４はフィンを示す。
【００３７】
（実施の形態６）
次に、本発明の実施の形態６について、図１１を用いて説明する。図９の構造では、冷却装置４の凸部８ａを各ねじ穴６ごとに設け、円形状に突出した形状としている。しかし、図１１に示すように、放熱板２の外周部に対応した位置であれば、複数のねじ穴６に対し一体の凸部８ｂを設けてもよい。
【００３８】
なお、図１１の例では直線状の１組の凸部８ｂを設けているが、図６に示す場合と同様に凸部８ｂを環状としてもよい。本実施の形態の場合も、実施の形態５と同様の効果を得ることができる。
【００３９】
（実施の形態７）
次に、本発明の実施の形態７について、図１２を用いて説明する。図７および図８に示したワッシャ２０ａでは平板形状のワッシャを示したが、図１２（ａ）に示すように、円形断面のワイヤー環２１ａとしてもよい。
【００４０】
しかし、ワイヤー環２１ａの断面形状は、これに限らず矩形等任意形状であってもよい。また、ワイヤー環２１ａの平面形状は、完全なリング状でなくてもよく、図１２（ｂ）に示すように一部を切断した形状のワイヤー環２１ｂや、図１２（ｃ）に示すようにリングを複数に分割した形状のワイヤー環２１を採用可能である。この場合にも、実施の形態４と同様の効果を得ることができる。
【００４１】
以上のように本発明の実施の形態について説明を行なったが、今回開示した実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれる。
【００４２】
【発明の効果】
本発明の半導体装置によれば、半導体装置の動作時における半導体素子の発熱等にともなう放熱板の撓みによる放熱板裏面と冷却装置表面の干渉を防ぐことができるため、半導体素子と放熱板間の接合部における熱応力の増加を抑制することができる。それにより、温度サイクルに対する半導体装置の熱疲労寿命を延長することができる。また、ねじ固定による半導体装置の拘束の程度を従来よりも軽減することができるので、固定ねじによる十分な締付力で半導体装置を冷却装置に固着することができる。したがって、半導体装置を厳しい振動環境下で使用した場合でも、ねじの緩みを抑制することができる。
【００４３】
本発明の半導体装置の固定構造によれば、放熱板と冷却装置との間に間隙を形成するとともに固定ねじによる半導体装置の拘束の程度を軽減することができるので、温度サイクルに対する半導体装置の熱疲労寿命を延長することができ、また半導体装置を厳しい振動環境下で使用した場合でも、ねじの緩みを抑制することができる。
【００４４】
本発明の半導体装置の固定方法によれば、放熱板と冷却装置との間に間隙を形成するとともに固定ねじによる半導体装置の拘束の程度を軽減することができるので、温度サイクルに対する半導体装置の熱疲労寿命を延長することができ、また半導体装置を厳しい振動環境下で使用した場合でも、ねじの緩みを抑制することができる。
【図面の簡単な説明】
【図１】 本発明の実施の形態１における半導体装置の部分断面側面図である。
【図２】 図１の半導体装置の断面図である。
【図３】 本発明の放熱板の平面図である。
【図４】 図３のＡ−Ａ線断面図である。
【図５】 本発明の実施の形態２における放熱板の平面図である。
【図６】 本発明の実施の形態３における放熱板の平面図である。
【図７】 本発明の実施の形態４における半導体装置の部分断面図である。
【図８】 （ａ）〜（ｃ）は本発明の実施の形態４におけるワッシャの平面図である。
【図９】 本発明の実施の形態５における冷却装置の平面図である。
【図１０】 図９のＢ−Ｂ線断面図である。
【図１１】 本発明の実施の形態６における冷却装置の平面図。
【図１２】 （ａ）〜（ｃ）は本発明の実施の形態７におけるワイヤー環の平面図および断面図である。
【図１３】 本発明の実施の形態１における放熱板の撓み状況を示す半導体装置の断面図である。
【図１４】 面間隔Ｄの条件の違いによる放熱板はんだ接合部への影響を有限要素解析で計算した結果を示す図である。
【符号の説明】
１ 半導体装置、２ 放熱板、３ 通し穴、４ 冷却装置、６ ねじ穴、７ａ、７ｂ、７ｃ、８ａ、８ｂ 凸部、９ 固定ねじ、１１ 放熱板はんだ接合部、１２ 絶縁部材、１３ 冷媒通路、１４ フィン、１５ グリース、２０ａ、２０ｂ、２０ｃ ワッシャ、２１ａ、２１ｂ、２１ｃ ワイヤー環、３０ 筐体、３１ 電極端子、３２ 導線、３３ 半導体素子、３４ 金属パターン、３５ 素子はんだ接合部。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device that transmits heat generated by a semiconductor element to a cooling device through a heat dissipation member, a structure for fixing the semiconductor device to the cooling device, and a method for fixing the semiconductor device to the cooling device.
[0002]
[Prior art]
Conventionally, as a method of transmitting heat generated by a semiconductor element to a cooling device through a heat sink, a gel grease or sheet-like member having thermal conductivity is applied or inserted between the heat sink and the cooling device to fix the semiconductor device. There was a method of fixing to the cooling device with screws. Such a semiconductor device and a fixing method are disclosed in, for example, Japanese Patent Laid-Open No. 4-233552.
[0003]
In order to increase the adhesion between the heat sink and the cooling device, the semiconductor device is fixed with a large number of screws. However, if the heat sink is bent or if the mounting surface of the semiconductor device of the cooling device is warped, the screw There is a concern that the insulating member and the semiconductor element fixed to the heat radiating plate may be damaged by the bending deformation of the heat radiating plate accompanying the fixing.
[0004]
Also, when temperature fluctuations occur, the thermal deformation of the semiconductor device is constrained by screw fixing, so the thermal stress (strain) of the solder joint to the heat sink in the semiconductor device increases compared to the unfixed state. As a result, there is a problem that the lifetime of the semiconductor device with respect to the temperature cycle is reduced.
[0005]
On the other hand, for example, Japanese Patent Application Laid-Open No. 63-31144 discloses a semiconductor device in which a groove is machined in the vicinity of a screw fixing portion of a semiconductor device to relieve an acting force on a semiconductor element accompanying screw fixing.
[0006]
[Problems to be solved by the invention]
In this semiconductor device, a groove is provided in the vicinity of the screw fixing portion so as to have low rigidity, thereby relieving stress on the semiconductor element accompanying the screw fixing.
[0007]
However, since the thermal deformation (deflection) of the semiconductor device is constrained, the thermal stress (strain) of the heat sink solder joint increases compared to the non-fixed state. As a result, there is a problem that the lifetime (reliability) of the semiconductor device with respect to the temperature cycle is reduced.
[0008]
In addition, when a semiconductor device is used in a severe vibration environment, a sufficient screw tightening force is required. However, in the conventional method, as the screw tightening force is increased, the restraining force against the deflection of the semiconductor device increases. From the viewpoint of reliability, necessary and sufficient tightening force could not be applied, and there was a concern about loosening of the screw in a vibration environment.
[0009]
The present invention has been made to solve the above-described problems, and can reduce the life of a semiconductor device against a temperature cycle and can be used in a severe vibration environment. The structure for fixing a semiconductor device to a cooling device And to provide a fixing method.
[0010]
[Means for Solving the Problems]
A semiconductor device according to the present invention is a semiconductor device fixed to a cooling device, and includes a semiconductor element, a heat sink that mounts the semiconductor element and dissipates heat generated in the semiconductor element, and the heat sink and the cooling device And a convex portion having a hole for receiving (inserting) a fixing screw to the cooling device, and a heat sink formed by the gap, The distance between the surfaces of the cooling device exceeds the amount of deflection of the heat sink due to temperature fluctuation. The convex portion may be formed by protruding a part of the heat radiating plate, or may be provided with another member fixed to the heat radiating plate. Moreover, you may form a convex part around a hole.
[0011]
Providing the protrusions as described above prevents the heat generation of the semiconductor element during the operation of the semiconductor device and the interference between the back surface of the heat sink and the surface of the cooling device due to the deflection of the heat sink due to the temperature fluctuation of the semiconductor device usage environment Can do. Further, by providing a hole for receiving a screw in the convex portion, the degree of restraint of the semiconductor device by fixing the screw to the cooling device can be remarkably reduced as compared with the conventional case.
[0012]
The structure for fixing a semiconductor device according to the present invention is a structure for fixing a semiconductor device having a heat sink to a cooling device, wherein at least one of the cooling device and the heat sink is between the heat sink and the cooling device and dissipates heat. A convex part having a hole for receiving a screw for fixing to the cooling device is formed in the central portion of the plate, and a surface interval between the heat radiating plate and the cooling device formed by the gap is a temperature. The semiconductor device is fixed to the cooling device by exceeding the amount of bending of the heat sink due to the fluctuation and screwing a fixing screw into the cooling device through the hole. In addition, although the said convex part may be formed in a part of at least one of a cooling device and a heat sink, you may form it in a member different from a cooling device and a heat sink. Moreover, you may form a convex part around a hole.
[0013]
Protruding portions as described above are provided on at least one of the cooling device and the heat radiating plate, and a fixing screw is inserted into the protruding portion to fix the semiconductor device to the cooling device, thereby providing a gap between the heat radiating plate and the cooling device. In addition to the formation, the degree of restraint of the semiconductor device by the fixing screw can be reduced.
[0014]
In one aspect, a fixing method of a semiconductor device according to the present invention is a method of fixing a semiconductor device having a heat sink to a cooling device, between the heat sink and the cooling device and at a central portion of the heat sink. Protrusions that form gaps are provided, and the surface spacing between the heat sink and the cooling device, which is formed by the gaps , exceeds the amount of deflection of the heat sink due to temperature fluctuations, and is so inserted through the protrusions. The fixing device is screwed onto the cooling device to fix the semiconductor device to the cooling device. In addition, although the said convex part may be formed in a part of at least one of a cooling device and a heat sink, you may form it in a member different from a cooling device and a heat sink.
[0015]
In another aspect, the method for fixing a semiconductor device according to the present invention is formed between the heat sink and the cooling device by installing a gap forming member that forms a gap at the center of the heat sink and is formed by the gap. The surface spacing between the heat sink and the cooling device exceeds the amount of bending of the heat sink due to temperature fluctuation, and the semiconductor is formed by inserting the gap forming member and screwing the fixing screw into the cooling device. Secure the device to the cooling device. As the gap forming member, for example, a washer, a wire ring having a circular cross section, a wire ring having a rectangular cross section, or the like can be used.
[0016]
In any of the above aspects, a fixing screw is screwed to the cooling device through the convex portion to fix the semiconductor device to the cooling device, so that a gap is formed between the heat radiating plate and the cooling device and the semiconductor by the fixing screw is used. The degree of restraint of the apparatus can be reduced.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to FIGS.
[0018]
(Embodiment 1)
As shown in FIGS. 1 and 2, the semiconductor device 1 of the present invention has a heat radiating plate 2, a housing 30, and a semiconductor element 33, and is fixed to the cooling device 4 with fixing screws 9.
[0019]
The heat sink 2 has a convex portion 7a, and a fixing screw 9 is inserted through the convex portion 7a. A gap is formed inside the convex portion 7a, and grease 15 is applied in the gap. An insulating member 12 is mounted on the heat sink 2 via a heat sink solder joint 11. The insulating member 12 has a metal pattern 34 on the front and back surfaces, and the semiconductor element 33 is mounted on the metal pattern 34 on the front surface side via an element solder joint 35.
[0020]
A plurality of insulating members 12 and semiconductor elements 33 are accommodated in the housing 30, and the semiconductor elements 33 are connected by conductive wires 32 in the example of FIG. 2. A part of the electrode terminal 31 extends on the housing 30.
[0021]
In the first embodiment, as described above, the heat sink 2 of the semiconductor device 1 is provided with the convex portion 7a, and the peripheral portion of the fixing screw 9 on the mounting surface of the heat sink 2 to the cooling device 4 is convex. An important feature. More specifically, as shown in FIGS. 3 and 4, the periphery of the through hole 3 that receives the fixing screw of the heat radiating plate 2 is convex, and the through hole 3 is surrounded by the convex portion 7 a. A plurality of through holes 3 are provided, and a convex portion 7 a is provided for each through hole 3. 3 and 4, the convex portion 7 a is annular, but the convex portion 7 a may be intermittently formed around the through hole 3.
[0022]
According to the first embodiment, the semiconductor device 1 is fixed to the cooling device 4 by the fixing screw 9 at the convex portion 7 a of the heat sink 2. At this time, grease 15 is applied between the central portion of the heat radiating plate 2 and the cooling device 4 to transmit the heat of the semiconductor device 1 to the cooling device 4. The thickness of the grease 15 at the time of screw fixing is determined by the height of the convex portion 7 a, and the heat radiating plate 2 does not interfere with the surface of the cooling device 4 immediately below the mounting position of the insulating member 12.
[0023]
Instead of the above grease 15, for example, an elastic member or the like that can absorb the deformation amount of the heat radiating plate 2 by elastic deformation and has excellent heat transfer characteristics can be used.
[0024]
In addition to the heat generated by the semiconductor element 33, the semiconductor device 1 undergoes thermal deformation due to temperature fluctuations in the usage environment. In general, copper or aluminum having a high thermal conductivity is used for the heat radiating plate 1, and ceramics are used for the insulating member 12. The linear expansion coefficients (α) of copper and aluminum are about 17 × 10 −6 (/ ° C.) and 23 × 10 −6 (/ ° C.), respectively, and that of the insulating member 12 is 3 to 10 × 10 −6 (/ And the heat sink 2 is bent as shown in FIG.
[0025]
At that time, grease 15 is applied between the heat sink 2 and the cooling device 4, but there is an interval corresponding to the height of the convex portion 7 a, so when the heat sink 2 is bent, the surface interval D is Although it reduces by bending, the bending of the heat sink 2 is not hindered.
[0026]
FIG. 14 shows the result of calculating the relationship of the generated strain of the heat sink solder joint 11 with respect to the condition of the surface interval D using finite element analysis. It can be seen that the strain is greatly reduced under the condition where the surface distance D exists as compared with the case where the surface distance D is zero. For this reason, the influence of the screw fixation with respect to the heat sink solder joint part 11, the insulating member 12, and the semiconductor element 33 can be suppressed to the minimum.
[0027]
Further, since the fixing to the cooling device 4 is performed at the portion of the convex portion 7a, the degree of restraint of the semiconductor device 1 by screw fixing can be reduced, and the screw can be tightened with a prescribed torque with respect to the used screw. Therefore, even if the semiconductor device 1 is placed in a severe vibration environment, the screw portion does not loosen.
[0028]
The height of the convex portion 7a from the back surface of the heat radiating plate 2 is preferably low because it is necessary to suppress the thermal resistance of the grease 15 layer. For example, a height of 0.01 mm or more and 0.2 mm or less is optimal in terms of the amount of bending of the heat sink 2 and the thermal resistance of the grease 15 layer.
[0029]
As described above, when the screws are fixed to the cooling device 4, even if thermal deformation (deflection) of the heat sink 2 due to temperature fluctuation occurs, the heat deformation of the heat sink 2 is not hindered. In addition, it is possible to prevent the thermal fatigue life of the heat sink solder joint 11 from being reduced and the semiconductor element 33 and the insulating member 12 from being damaged without increasing the thermal stress of the insulating member 12 and the semiconductor element 33.
[0030]
(Embodiment 2)
Next, Embodiment 2 of the present invention will be described with reference to FIG. In the example of FIGS. 1 to 4, the convex portion 7 a of the heat sink 2 protrudes independently for each through hole 3 in a circular shape. However, as shown in FIG. 5, the deflection of the center portion of the heat sink 2 must be prevented. For example, the protrusion 7b of the heat sink 2 may be linear. That is, a pair of linear convex portions 7 a may be formed on both sides of the central portion of the heat sink 2 so as to surround the plurality of through holes 3. In the case of this example, in addition to obtaining the same effect as in the first embodiment, the processing of the convex portion 7a is easier than in the first embodiment.
[0031]
(Embodiment 3)
Next, Embodiment 3 of the present invention will be described with reference to FIG. As shown in FIG. 6, a convex portion 7 c may be provided on the heat radiating plate 2 so as to surround the central region of the heat radiating plate 2. Also in this case, not only the same effect as in the first embodiment is obtained, but also the processing of the convex portion 7a is easier than in the first embodiment. In addition, the grease 15 can be prevented from protruding outside the heat sink 2.
[0032]
(Embodiment 4)
Next, Embodiment 4 of the present invention will be described with reference to FIG. In the structure of FIG. 1, the protrusion 7 a is processed and provided on the heat radiating plate 2, but as shown in FIG. 7, a washer 20 a made separately from the heat radiating plate 2 is connected to the heat radiating plate 2 of the screw fixing portion and the cooling device. 4 may be installed.
[0033]
Thereby, the same effects as those of the first embodiment can be obtained, and the processing of the convex portion 7a can be omitted, and the cost of the heat radiating plate 2 can be suppressed.
[0034]
Examples of the planar shape of the washer 20a are shown in FIGS. As shown in FIG. 8 (a), the planar shape of the washer 20a is typically a complete ring shape, but may be an arbitrary shape such as a rectangle. Alternatively, a washer 20b having a shape obtained by cutting a part of the ring as shown in FIG. 8B or a washer 20c having a shape obtained by dividing the ring into a plurality of shapes as shown in FIG. 8C can be adopted.
[0035]
Any member other than the washer 20a may be used as long as it is a member that can receive the fixing screw 9 and can form a gap between the heat sink 2 and the cooling device 4 (gap forming member). Can be adopted.
[0036]
(Embodiment 5)
Next, a fifth embodiment of the present invention will be described with reference to FIG. 9 and FIG. In the structure of FIG. 1, the protrusion 7 a is provided on the heat sink 2 of the semiconductor device 1. However, as shown in FIGS. 9 and 10, the protrusion 8 a is provided on the mounting surface of the semiconductor device 1 in the cooling device 4. Also good. The convex portion 8a is provided so as to surround each screw hole 6 into which the fixing screw 9 is screwed. Also in this case, the same effect as in the first embodiment can be obtained. In addition, in FIG. 10, 13 shows a refrigerant path and 14 shows a fin.
[0037]
(Embodiment 6)
Next, Embodiment 6 of the present invention will be described with reference to FIG. In the structure of FIG. 9, the convex part 8a of the cooling device 4 is provided for each screw hole 6, and has a shape protruding in a circular shape. However, as shown in FIG. 11, as long as the position corresponds to the outer peripheral portion of the heat radiating plate 2, integral convex portions 8 b may be provided for the plurality of screw holes 6.
[0038]
In addition, in the example of FIG. 11, the linear set of convex portions 8b is provided, but the convex portions 8b may be annular as in the case shown in FIG. In the case of the present embodiment, the same effect as in the fifth embodiment can be obtained.
[0039]
(Embodiment 7)
Next, Embodiment 7 of the present invention will be described with reference to FIG. Although the flat washer is shown in the washer 20a shown in FIGS. 7 and 8, a wire ring 21a having a circular cross section may be used as shown in FIG. 12 (a).
[0040]
However, the cross-sectional shape of the wire ring 21a is not limited to this, and may be an arbitrary shape such as a rectangle. Moreover, the planar shape of the wire ring 21a may not be a complete ring shape, as shown in FIG. 12B, a wire ring 21b having a partially cut shape as shown in FIG. A wire ring 21 having a shape obtained by dividing the ring into a plurality of parts can be employed. Also in this case, the same effect as in the fourth embodiment can be obtained.
[0041]
Although the embodiment of the present invention has been described above, the embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, and includes meanings equivalent to the terms of the claims and all modifications within the scope.
[0042]
【The invention's effect】
According to the semiconductor device of the present invention, it is possible to prevent interference between the back surface of the heat sink and the surface of the cooling device due to bending of the heat sink due to heat generation of the semiconductor element during operation of the semiconductor device. An increase in thermal stress at the joint can be suppressed. Thereby, the thermal fatigue life of the semiconductor device with respect to the temperature cycle can be extended. In addition, since the degree of restraint of the semiconductor device by screw fixing can be reduced as compared with the prior art, the semiconductor device can be fixed to the cooling device with a sufficient tightening force by the fixing screw. Therefore, even when the semiconductor device is used in a severe vibration environment, it is possible to suppress loosening of the screw.
[0043]
According to the fixing structure of the semiconductor device of the present invention, the gap between the heat sink and the cooling device can be formed and the degree of restraint of the semiconductor device by the fixing screw can be reduced. The fatigue life can be extended and loosening of the screw can be suppressed even when the semiconductor device is used in a severe vibration environment.
[0044]
According to the semiconductor device fixing method of the present invention, a gap is formed between the heat sink and the cooling device, and the degree of restraint of the semiconductor device by the fixing screw can be reduced. The fatigue life can be extended and loosening of the screw can be suppressed even when the semiconductor device is used in a severe vibration environment.
[Brief description of the drawings]
FIG. 1 is a partial cross-sectional side view of a semiconductor device according to a first embodiment of the present invention.
2 is a cross-sectional view of the semiconductor device of FIG.
FIG. 3 is a plan view of the heat sink of the present invention.
4 is a cross-sectional view taken along line AA in FIG.
FIG. 5 is a plan view of a heat dissipation plate in Embodiment 2 of the present invention.
FIG. 6 is a plan view of a heat dissipation plate in Embodiment 3 of the present invention.
FIG. 7 is a partial cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention.
FIGS. 8A to 8C are plan views of washers according to Embodiment 4 of the present invention. FIGS.
FIG. 9 is a plan view of a cooling device according to Embodiment 5 of the present invention.
10 is a cross-sectional view taken along line BB in FIG.
FIG. 11 is a plan view of a cooling device according to Embodiment 6 of the present invention.
12A to 12C are a plan view and a cross-sectional view of a wire ring according to a seventh embodiment of the present invention.
FIG. 13 is a cross-sectional view of the semiconductor device showing a bending state of the heat sink in the first embodiment of the present invention.
FIG. 14 is a diagram showing the result of calculation by finite element analysis of the influence on the heat sink solder joint due to the difference in the surface spacing D condition.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor device, 2 Heat sink, 3 Through hole, 4 Cooling device, 6 Screw hole, 7a, 7b, 7c, 8a, 8b Convex part, 9 Fixing screw, 11 Heat sink solder joint part, 12 Insulation member, 13 Refrigerant passage , 14 Fin, 15 Grease, 20a, 20b, 20c Washer, 21a, 21b, 21c Wire ring, 30 Housing, 31 Electrode terminal, 32 Conductor, 33 Semiconductor element, 34 Metal pattern, 35 Element solder joint.

Claims (10)

冷却装置に固定される半導体装置であって、
半導体素子と、
前記冷却装置に接合し、この接合面の裏面側に前記半導体素子を搭載し、前記半導体素子で発生した熱を放散する放熱板と、
前記放熱板と前記冷却装置との間であって前記放熱板の中央部に間隙を形成するとともに前記冷却装置への固定用ねじを受け入れる穴を有する凸部と、
を備え、
前記間隙によって形成される、前記放熱板と前記冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超える半導体装置。A semiconductor device fixed to a cooling device,
A semiconductor element;
Bonding to the cooling device, mounting the semiconductor element on the back side of the bonding surface, and a heat dissipation plate that dissipates heat generated in the semiconductor element,
A convex portion having a hole between the heat radiating plate and the cooling device and forming a gap in the central portion of the heat radiating plate and receiving a fixing screw to the cooling device;
With
A semiconductor device in which a surface interval between the heat radiating plate and the cooling device formed by the gap exceeds an amount of bending of the heat radiating plate due to temperature fluctuation. 前記半導体素子と放熱板との間に絶縁部材を備え、
前記絶縁部材の線膨張係数は、前記放熱板の線膨張係数より低い請求項１に記載の半導体装置。An insulating member is provided between the semiconductor element and the heat sink,
The semiconductor device according to claim 1, wherein a linear expansion coefficient of the insulating member is lower than a linear expansion coefficient of the heat sink. 前記間隙には、グリースを配置した、請求項１または２に記載の半導体装置。The gap was placed a grease, the semiconductor device according to claim 1 or 2. 放熱板を有する半導体装置の冷却装置への固定構造であって、
前記冷却装置と前記放熱板の少なくとも一方に、前記放熱板と前記冷却装置との間であって前記放熱板の中央部に間隙を形成するとともに前記冷却装置への固定用ねじを受け入れる穴を有する凸部を設け、
前記間隙によって形成される、前記放熱板と前記冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超え、
前記穴を通して前記冷却装置に固定ねじを螺着することにより、前記半導体装置を前記冷却装置に固定した、半導体装置の固定構造。A structure for fixing a semiconductor device having a heat sink to a cooling device,
At least one of the cooling device and the heat radiating plate has a hole between the heat radiating plate and the cooling device, forming a gap in the center of the heat radiating plate and receiving a fixing screw to the cooling device. Protrusions are provided,
The surface interval between the heat sink and the cooling device formed by the gap exceeds the amount of deflection of the heat sink due to temperature fluctuation,
A semiconductor device fixing structure in which a fixing screw is screwed into the cooling device through the hole to fix the semiconductor device to the cooling device. 前記半導体素子と放熱板との間に絶縁部材を備え、
前記絶縁部材の線膨張係数は、前記放熱板の線膨張係数より低い請求項４に記載の半導体装置の固定構造。An insulating member is provided between the semiconductor element and the heat sink,
The semiconductor device fixing structure according to claim 4 , wherein a linear expansion coefficient of the insulating member is lower than a linear expansion coefficient of the heat sink. 前記間隙には、グリースを配置した、請求項４または５に記載の半導体装置の固定構造。The semiconductor device fixing structure according to claim 4 , wherein grease is disposed in the gap. 放熱板を有する半導体装置を冷却装置に固定する方法であって、
前記放熱板と前記冷却装置との間であって前記放熱板の中央部に間隙を形成する凸部を設け、該凸部を挿通するように前記冷却装置に固定ねじを螺着することにより、前記半導体装置を前記冷却装置に固定し、
前記間隙によって形成される、前記放熱板と前記冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超える半導体装置の固定方法。A method of fixing a semiconductor device having a heat sink to a cooling device,
By providing a convex portion that forms a gap at the center of the heat radiating plate between the heat radiating plate and the cooling device, and screwing a fixing screw to the cooling device so as to pass through the convex portion, Fixing the semiconductor device to the cooling device;
The method of fixing a semiconductor device, wherein a surface interval between the heat sink and the cooling device formed by the gap exceeds a deflection amount of the heat sink due to temperature fluctuation. 放熱板を有する半導体装置を冷却装置に固定する方法であって、
前記放熱板と前記冷却装置との間であって前記放熱板の中央部に間隙を形成する間隙形成部材を設置し、該間隙形成部材を挿通して前記冷却装置に固定ねじを螺着することにより、前記半導体装置を前記冷却装置に固定し、
前記間隙によって形成される、前記放熱板と前記冷却装置との間の面間隔は、温度変動にともなう放熱板の撓み量を超える半導体装置の固定方法。A method of fixing a semiconductor device having a heat sink to a cooling device,
A gap forming member is formed between the heat radiating plate and the cooling device to form a gap at the center of the heat radiating plate, and the fixing screw is screwed into the cooling device through the gap forming member. By fixing the semiconductor device to the cooling device,
The method of fixing a semiconductor device, wherein a surface interval between the heat sink and the cooling device formed by the gap exceeds a deflection amount of the heat sink due to temperature fluctuation . 前記半導体素子を搭載するとともに放熱板に接合された絶縁部材を備え、
前記絶縁部材の線膨張係数は、前記放熱板の線膨張係数より低い請求項７または８に記載の半導体装置の固定方法。An insulating member mounted with the semiconductor element and bonded to a heat sink;
The method for fixing a semiconductor device according to claim 7 , wherein a linear expansion coefficient of the insulating member is lower than a linear expansion coefficient of the heat sink. 前記間隙には、グリースを配置した、請求項７から９のいずれか１項に記載の半導体装置の固定方法。The gap was placed a grease, fixing method of a semiconductor device according to any one of claims 7 to 9.
JP2002102487A 2002-04-04 2002-04-04 Semiconductor device, fixing structure thereof, and fixing method of semiconductor device Expired - Fee Related JP3834254B2 (en)

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