JP3794808B2 - Substrate processing equipment - Google Patents

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体ウエハ、液晶表示器用のガラス基板、フォトマスク用のガラス基板、光ディスク用の基板などの基板に対する複数の基板処理を好適に行うための基板処理装置に関する。
【０００２】
【従来の技術】
例えば、ポリシング処理工程の次の洗浄工程では、アンモニアなどのアルカリ系の薬液を供給しながら行うブラシ洗浄処理と、フッ酸などの酸系の薬液による薬液処理と、リンス処理と、乾燥処理とからなる一連の基板処理を行う。この一連の基板処理を行う基板処理装置においては、アルカリ雰囲気と酸雰囲気とを分離するために、アルカリ系の薬液によるブラシ洗浄処理を行う第１の基板処理部と、酸系の薬液による薬液処理とリンス処理と乾燥処理とを行う第２の基板処理部とに分けられている。各基板処理部には、基板を保持するための基板保持機構や、基板保持機構に保持された基板を鉛直方向の軸芯周りで回転させる基板回転機構、基板保持機構に保持された基板の周囲に配置されるカップやチャンバなどの囲いを備えている。
【０００３】
そして、従来のこの種の基板処理装置は、これら基板処理部が水平方向に配設され、各基板処理部間で基板の受渡しを行う基板受渡しロボットが各基板処理部の間に設けられている。
【０００４】
【発明が解決しようとする課題】
しかしながら、このような構成を有する従来装置においては、複数の基板処理部を水平方向に配設しているので、装置の設置面積が大きくならざるを得ない。この種の基板処理装置はランニングコストが高いクリーンルーム内に設置されるので、従来装置のように装置の設置面積が大きいと、クリーンルームの有効利用が図れないという問題がある。
【０００５】
本発明は、このような事情に鑑みてなされたものであって、装置の設置面積を小さくし得る基板処理装置を提供することを目的とする。
【０００６】
【課題を解決するための手段】
本発明は、このような目的を達成するために、次のような構成をとる。
すなわち、請求項１に記載の発明は、基板を保持する基板保持手段と、前記基板保持手段に保持された基板を回転させる基板回転手段と、前記基板保持手段に保持された基板の周囲に配置される囲いとを個々に有する基板処理部をｎ個（ｎは２以上の自然数）備え、これら基板処理部を鉛直方向に積層し、下からｉ段目（ｉは、１〜（ｎ−１）の自然数）の基板処理部の囲いの上方と、下から（ｉ＋１）段目の基板処理部の囲いの下方とには、前記下からｉ段目の基板処理部と前記下から（ｉ＋１）段目の基板処理部との間で基板を受け渡すための基板受渡し開口が形成され、かつ、前記各基板受渡し開口に位置して、その上下の基板処理部の雰囲気を遮断する（ｎ−１）個の雰囲気遮断部材と、前記各雰囲気遮断部材を、対応する前記基板受渡し開口と、その基板受渡し開口から外れた退避位置との間で個別に変位させる（ｎ−１）個の変位手段と、前記各雰囲気遮断部材を回転させる（ｎ−１）個の雰囲気遮断部材回転手段と、前記各基板受渡し開口を介して、その上下の基板処理部の間で基板を受け渡す（ｎ−１）個の基板受渡し手段と、最下段の基板処理部に対する基板の搬入または搬出の際には、基板を搬入出するための下方搬入出口を最下段の基板処理部の囲いに形成し、最下段の基板処理部で基板処理を行う際には、前記下方搬入出口を遮断する下方搬入出口形成／遮断手段と、最上段の基板処理部に対する基板の搬出または搬入の際には、基板を搬入出するための上方搬入出口を最上段の基板処理部の囲いに形成し、最上段の基板処理部で基板処理を行う際には、前記上方搬入出口を遮断する上方搬入出口形成／遮断手段と、を備えたことを特徴とするものである。
【０００７】
請求項２に記載の発明は、上記請求項１に記載の基板処理装置において、前記各雰囲気遮断部材からその下方の基板処理部内に向けて気体を供給する気体供給手段を前記各雰囲気遮断部材に備えるとともに、最上段の基板処理部内に気体を導入する気体導入手段を前記最上段の基板処理部に設け、かつ、各基板処理部内の気体を排出する排気手段を各基板処理部ごとに設けたことを特徴とするものである。
【０００８】
請求項３に記載の発明は、上記請求項１または２に記載の基板処理装置において、前記複数個の基板処理部の中の少なくとも一つの基板処理部の基板回転手段を、上下に開口した中空部を有する回転子と、前記回転子と同芯状に設けられ、上下に開口した中空部を有するステータとを備えた中空回転モーターで構成し、前記中空回転モーターを備えた基板処理部の基板保持手段は、基板の外周部を３箇所以上で保持する３個以上の基板保持部材を、前記中空回転モーターの回転子に連結して構成したことを特徴とするものである。
【０００９】
請求項４に記載の発明は、上記請求項１ないし３のいずれかに記載の基板処理装置において、各基板処理部で行われる一連の基板処理は、最下段の基板処理部に基板を搬入し、最下段の基板処理部における基板処理から始めて、下の基板処理部から上の基板処理部へと順に各基板処理部における基板処理を行っていき、最上段の基板処理部における基板処理が終了すると、最上段の基板処理部から基板を搬出するように構成したことを特徴とするものである。
【００１０】
請求項５に記載の発明は、上記請求項４に記載の基板処理装置において、基板処理部は２個備えており、下段の基板処理部で行う第１の基板処理は、第１の薬液と洗浄具とを用いた基板処理であり、上段の基板処理部で行う第２の基板処理は、第２の薬液を用いた基板処理と、リンス処理および／または乾燥処理であることを特徴とするものである。
【００１１】
【作用】
請求項１に記載の発明の作用は次のとおりである。
各基板処理部では、基板保持手段が基板を保持し、基板回転手段がその基板を回転させ、囲い内においてその基板の回転状態で個々の基板処理が行われる。
【００１２】
これらｎ個の基板処理は鉛直方向に積層されている。
以下の作用の説明では、特に断らない限り、各基板処理部は、下から順に１段目の基板処理部（最下段の基板処理部）、２段目の基板処理部、３段目の基板処理部、…、（ｎ─１）段目の基板処理部、ｎ段目の基板処理部（最上段の基板処理部）として説明する。
【００１３】
また、例えば、１段目の基板処理部の囲いの上方と、２段目の基板処理部の囲いの下方とに形成された基板受渡し開口を〔１−２〕番目の基板受渡し開口というように、ｉ段目（ｉは１〜（ｎ−１）の自然数）の基板処理部の囲いの上方と、（ｉ＋１）段目の基板処理部の囲いの下方とに形成された基板受渡し開口を〔ｉ−（ｉ＋１）〕番目の基板受渡し開口と表記して説明する。
【００１４】
また、例えば、〔１−２〕番目の基板受渡し開口に位置して、１段目の基板処理部の雰囲気と２段目の基板処理部の雰囲気とを遮断する雰囲気遮断部材を〔１−２〕番目の雰囲気遮断部材というように、ｉ段目の基板処理部と（ｉ＋１）段目の基板処理部との間の雰囲気遮断部材を〔ｉ−（ｉ＋１）〕番目の雰囲気遮断部材と表記して説明する。
【００１５】
また、例えば、〔１−２〕番目の雰囲気遮断部材を、〔１−２〕番目の基板受渡し開口と、その基板受渡し開口から外れた退避位置との間で変位させる変位手段を〔１−２〕番目の変位手段というように、〔ｉ−（ｉ＋１）〕番目の雰囲気遮断部材を、〔ｉ−（ｉ＋１）〕番目の基板受渡し開口と、その基板受渡し開口から外れた退避位置との間で変位させる変位手段を〔ｉ−（ｉ＋１）〕番目の変位手段と表記して説明する。
【００１６】
また、例えば、〔１−２〕番目の雰囲気遮断部材を回転させる雰囲気遮断部材回転手段を〔１−２〕番目の雰囲気遮断部材回転手段というように、〔ｉ−（ｉ＋１）〕番目の雰囲気遮断部材を回転させる雰囲気遮断部材回転手段を〔ｉ−（ｉ＋１）〕番目の雰囲気遮断部材回転手段と表記して説明する。
【００１７】
また、例えば、〔１−２〕番目の基板受渡し開口を介して、１段目の基板処理部と２段目の基板処理部との間で基板を受け渡す基板受渡し手段を〔１−２〕番目の基板受渡し手段というように、〔ｉ−（ｉ＋１）〕番目の基板受渡し開口を介して、ｉ段目の基板処理部と（ｉ＋１）段目の基板処理部との間で基板を受け渡す基板受渡し手段を〔ｉ−（ｉ＋１）〕番目の基板受渡し手段と表記して説明する。
【００１８】
さて、各基板処理部で行われる一連の基板処理は、請求項４に限定したように下の基板処理部から上の基板処理部へと順に各基板処理部における基板処理を行っていってもよいし、その逆に、上の基板処理部から下の基板処理部へと順に各基板処理部における基板処理を行っていってもよい。
【００１９】
前者の場合の一連の基板処理は以下のように行われる。
まず、下方搬入出口形成／遮断手段が、最下段、すなわち、１段目の基板処理部の囲いに下方搬入出口を形成して、そこから、未処理の基板が搬入されて１段目の基板処理部の基板保持手段に引き渡される。この基板の搬入が完了すると、下方搬入出口形成／遮断手段は下方搬入出口を遮断する。また、〔１−２〕番目の雰囲気遮断部材は〔１−２〕番目の基板受渡し開口に位置していて、１段目の基板処理部の雰囲気と２段目の基板処理部の雰囲気とが遮断されている。そして、〔１−２〕番目の雰囲気遮断部材回転手段によって、〔１−２〕番目の雰囲気遮断部材が回転され、この状態で、１段目の基板処理部における基板処理が行われる。
【００２０】
このとき、１段目の基板処理部の囲いによって、外部の雰囲気が１段目の基板処理部内に流れ込むことや、１段目の基板処理部内の雰囲気が外部に漏れ出すことが防止される。また、〔１−２〕番目の雰囲気遮断部材によって、２段目の基板処理部内の雰囲気が１段目の基板処理部に流れ込むことや、１段目の基板処理部内の雰囲気が２段目の基板処理部内に漏れ出すことが防止される。しかも、この雰囲気遮断部材の回転によって形成される気流により、１段目の基板処理部と２段目の基板処理部との間の雰囲気の遮断をより一層効果的に行える。また、例えば、２段目の基板処理部で行う基板処理が処理液を用いるものである場合、その処理液が、〔１−２〕番目の雰囲気遮断部材の上に落下しても、この雰囲気遮断部材の回転によって処理液はこの雰囲気遮断部材の側方に吹き飛ばされ、２段目の基板処理部で用いる処理液が１段目の基板処理部に入ってくることを防止できる。従って、周囲（特に２段目の基板処理部）の雰囲気の影響を受けずに、１段目の基板処理部における基板処理を行うことができ、また、１段目の基板処理部内の雰囲気による影響を周囲（特に２段目の基板処理部）に与えることを防止できる。
【００２１】
１段目の基板処理部における基板処理が終了すると、〔１−２〕番目の変位手段が〔１−２〕番目の雰囲気遮断部材を〔１−２〕番目の基板受渡し開口から退避位置に変位させて、〔１−２〕番目の基板受渡し開口を開き、この開口を介して、〔１−２〕番目の基板受渡し手段が、１段目の基板処理部における基板処理を終えた基板を、１段目の基板処理部から２段目の基板処理部へ引き渡す。
【００２２】
この基板の受渡しが完了すると、〔１−２〕番目の変位手段は〔１−２〕番目の雰囲気遮断部材を退避位置から〔１−２〕番目の基板受渡し開口に変位させてその基板受渡し開口に位置させ、１段目の基板処理部の雰囲気と２段目の基板処理部の雰囲気とを遮断する。また、〔２−３〕番目の雰囲気遮断部材は〔２−３〕番目の基板受渡し開口に位置され、２段目の基板処理部の雰囲気と３段目の基板処理部の雰囲気とが遮断されている。そして、〔１−２〕番目の雰囲気遮断部材回転手段によって、〔１−２〕番目の雰囲気遮断部材が回転されるとともに、〔２−３〕番目の雰囲気遮断部材回転手段によって、〔２−３〕番目の雰囲気遮断部材が回転され、この状態で、２段目の基板処理部における基板処理が行われる。
【００２３】
このとき、２段目の基板処理部の囲いによって、外部の雰囲気が２段目の基板処理部内に流れ込むことや、２段目の基板処理部内の雰囲気が外部に漏れ出すことが防止される。また、２段目の基板処理部の上下の〔１−２〕番目の雰囲気遮断部材と〔２−３〕番目の雰囲気遮断部材によって、１段目の基板処理部内の雰囲気や３段目の基板処理部内の雰囲気が２段目の基板処理部に流れ込むことや、２段目の基板処理部内の雰囲気が１段目の基板処理部や３段目の基板処理部に漏れ出すことが防止される。しかも、２段目の基板処理部の上下の〔１−２〕番目の雰囲気遮断部材と〔２−３〕番目の雰囲気遮断部材とを回転させることによって、１段目の基板処理部と２段目の基板処理部との間の雰囲気の遮断、および、３段目の基板処理部と２段目の基板処理部との間の雰囲気の遮断をより一層効果的に行える。また、例えば、３段目の基板処理部で行う基板処理が処理液を用いるものである場合、その処理液が、〔２−３〕番目の雰囲気遮断部材の上に落下しても、この雰囲気遮断部材の回転によって処理液はこの雰囲気遮断部材の側方に吹き飛ばされ、３段目の基板処理部で用いる処理液が２段目の基板処理部に入ってくることを防止できる。従って、周囲（特に１段目の基板処理部や３段目の基板処理部）の雰囲気の影響を受けずに、２段目の基板処理部における基板処理を行うことができ、また、２段目の基板処理部内の雰囲気による影響を周囲（特に１段目の基板処理部や３段目の基板処理部）に与えることを防止できる。
【００２４】
以後同様にして、下の基板処理部から上の基板処理部へと順に各基板処理部における基板処理が、上記２段目の基板処理部における基板処理と同様の動作で実行される。そして、最後に最上段、すなわち、ｎ段目の基板処理部における基板処理が行われる。
【００２５】
このｎ段目の基板処理部における基板処理は、上方搬入出口形成／遮断手段によりｎ段目の基板処理部の囲いの上方搬入出口が遮断されているとともに、〔（ｎ−１）−ｎ〕番目の雰囲気遮断部材は〔（ｎ−１）−ｎ〕番目の基板受渡し開口に位置され、（ｎ−１）段目の基板処理部の雰囲気とｎ段目の基板処理部の雰囲気とが遮断され、かつ、〔（ｎ−１）−ｎ〕番目の雰囲気遮断部材回転手段によって、この〔（ｎ−１）−ｎ〕番目の雰囲気遮断部材が回転された状態で行われる。これにより、周囲（特に（ｎ−１）段目の基板処理部）の雰囲気の影響を受けずに、ｎ段目の基板処理部における基板処理を行うことができ、また、ｎ段目の基板処理部内の雰囲気による影響を周囲（特に（ｎ−１）段目の基板処理部）に与えることを防止できる。
【００２６】
ｎ段目の基板処理部における基板処理が終了すると、上方搬入出口形成／遮断手段はｎ段目の基板処理部の囲いに上方搬入出口を形成する。この上方搬入出口を介して、ｎ段目の基板処理部の基板保持手段から処理済の基板が取り出され、ｎ段目の基板処理部の囲いの外に搬出される。
【００２７】
なお、１段目の基板処理部における基板処理を終えた基板を、１段目の基板処理部から２段目の基板処理部へ受渡して、１番目の基板処理部が処理可能になると、新たな未処理基板が１段目の基板処理部へと搬入され、２段目の基板処理部における基板処理と並行して、１段目の基板処理部における基板処理が行われる。２段目より上の基板処理部においても同様に、下の基板処理部や上の基板処理部との間での基板の受渡しを行う場合以外は、各基板処理部における基板処理は並行して行われる。
【００２８】
上記では、下の基板処理部から上の基板処理部へと順に各基板処理部における基板処理を行っていく場合の動作を説明したが、上の基板処理部から下の基板処理部へと順に各基板処理部における基板処理を行っていく場合は、ｎ番目の基板処理部に未処理基板を搬入し、ｎ段目の基板処理部における基板処理、（ｎ−１）段目の基板処理部における基板処理、…、２段目の基板処理部における基板処理、１段目の基板処理部における基板処理の順に一連の基板処理を行っていき、処理済基板を１段目の基板処理部から搬出する。基板の搬入／搬出や各基板処理部における基板処理などの詳細は、上述した下の基板処理部から上の基板処理部へと順に各基板処理部における基板処理を行っていく場合と略同様である。
【００２９】
請求項２に記載の発明によれば、１段目〜（ｎ−１）段目の基板処理部において基板処理を行う際、回転されている雰囲気遮断部材から下方に向けて気体が供給され、雰囲気遮断部材の下方の基板処理部内に新たな気体が供給されるとともに、各基板処理部に設けられた排気手段によって各基板処理部内の雰囲気は排気される。これにより、１段目〜（ｎ−１）段目の基板処理部では、各基板処理部内の雰囲気を新たな気体の雰囲気に置換でき、各基板処理部内の雰囲気を清浄に維持することができる。また、最上段の基板処理部は、気体導入手段から最上段の基板処理部内に新たな気体が導入されるとともに、最上段の基板処理部に設けられた排気手段によって最上段の基板処理部内の雰囲気は排気され、最上段の基板処理部内の雰囲気も清浄に維持することができる。
【００３０】
請求項３に記載の発明は、複数個の基板処理部の中の少なくとも一つの基板処理部の基板回転手段を、上下に開口した中空部を有する回転子と、回転子と同芯状に設けられ、上下に開口した中空部を有するステータとを備えた中空回転モーターで構成し、中空回転モーターを備えた基板処理部の基板保持手段は、基板の外周部を３箇所以上で保持する３個以上の基板保持部材を、中空回転モーターの回転子に連結して構成した。
【００３１】
上記中空回転モーターを備えた基板処理部では、基板は回転子に連結された３個以上の基板保持部材に外周部の３箇所以上が保持され、この基板の保持状態で、ステータに対して、回転子、基板保持部材とともに基板が回転され、保持した基板を回転させて所定の基板処理が行われる。
【００３２】
この構成の中空回転モーターによれば、回転子、ステータはともに上下に開口した中空部を有するので、中空回転モーターも上下に開口した中空部が形成され、保持された基板の周方向に上記中空回転モーターを配置できる。また、この中空部が形成された中空回転モーターを構成する回転子に基板保持部材を連結して基板を保持するので、保持された基板の鉛直下方に基板回転用の電動モーターや基板保持部材の支持台などの障害物を配置するのを回避できる。従って、保持された基板の上面の上方空間および下面の下方空間から基板回転用の電動モーターや基板保持部材の支持台などの障害物を無くすことができ、中空回転モーターの中空部からも基板に基板処理を行えるので、基板を回転して所定の基板処理を行う場合、基板の上下両面に対して同時に処理を行うことができる。また、保持された基板の周方向に中空回転モーターを配置できるので、この中空回転モーターを備えた基板処理部の鉛直方向の寸法を低くでき、基板処理装置全体の鉛直方向の寸法を低くすることができる。
【００３３】
なお、ｎ個の基板処理部のうち、一部の基板処理部にだけ中空回転モーターを備えるように構成してもよいし、全ての基板処理部に上記中空回転モーターを備えるようにしてもよい。
【００３４】
請求項４に記載の発明は、下の基板処理部から上の基板処理部へと順に各基板処理部における基板処理を行っていくもので、その詳細な作用については、上記請求項１に記載の発明の作用で説明したとおりである。
【００３５】
例えば、ブラシ洗浄処理、薬液処理、リンス処理、乾燥処理からなる一連の基板処理を行う場合、後の基板処理に進むに従って高い処理精度が要求される。特に、最後の乾燥処理が終了したとき、ブラシ洗浄時に発生するパーティクルなどが、乾燥処理後の基板に付着するなど前の基板処理の雰囲気で基板が再汚染されることがないように考慮する必要がある。一方で、鉛直方向に積層した基板処理部で一連の基板処理を行う場合、仮に各基板処理部間の雰囲気遮断に漏れがあると、上の基板処理部内の雰囲気が下の基板処理部内に流下し易い。従って、例えば、上の基板処理部から下の基板処理部へと順に各基板処理部で一連の基板処理を行っていくと、後の基板処理中に、前の基板処理の雰囲気の影響を受け易くなる。これに対して、下の基板処理部から上の基板処理部へと順に各基板処理部で一連の基板処理を行っていくと、後の基板処理中に、前の基板処理の雰囲気の影響を受け難くなり、最終的な基板の処理精度を高くすることができる。
【００３６】
請求項５に記載の発明によれば、基板処理部を２個（ｎ＝２）備え、これら２個の基板処理部を鉛直方向に積層し、まず、下段（１段目）の基板処理部に未処理基板を搬入して、そこで第１の薬液と洗浄具とを用いた基板処理を行い、次に、上段（２段目）の基板処理部で第２の薬液を用いた基板処理と、リンス処理および／または乾燥処理を行って、処理済基板を上段の基板処理部から搬出する。
【００３７】
【発明の実施の形態】
以下、図面を参照して本発明の実施例を説明する。
図１は本発明の一実施例に係る基板処理装置の全体構成を示す縦断面図である。なお、図１及び図８〜図１１の縦断面図では、下カップ、中間カップ、上カップの縦断面形状のみを示している。
【００３８】
この装置は、２個の基板処理部１、２が鉛直方向に積層して配設され、下段の基板処理部１と上段の基板処理部２との間に配設された中間カップ３ｂに各基板処理部１、２間で基板Ｗを受け渡すための平面視で円形の基板受渡し開口４が形成されている。また、この基板受渡し開口４に位置して下段の基板処理部１の雰囲気と上段の基板処理部２の雰囲気とを遮断する雰囲気遮断部材５を備えている。後述するように、この雰囲気遮断部材５は、鉛直方向の軸芯Ｊ１周りで回転可能に構成されているとともに、基板受渡し開口４とその基板受渡し開口４から外れた退避位置との間で変位可能に構成されている。さらに、基板受渡し開口４を介して、下段の基板処理部１と上段の基板処理部２との間で基板Ｗを受け渡す基板受渡し機構６も備えている。
【００３９】
下段の基板処理部１は、アンモニアなどの第１の薬液と、洗浄具としての洗浄ブラシ１５ａ、１５ｂを用いた、第１の基板処理である基板Ｗの洗浄処理を行う基板処理部である。この基板処理部１は、基板Ｗの外周部を３箇所以上で保持する３個以上の基板保持部材２０と、基板保持部材２０に保持された基板Ｗを鉛直方向の軸芯Ｊ２周りで回転させる中空回転モーター３０と、基板保持部材２０に保持された基板Ｗの周囲に配置される下カップ３ａ及び中間カップ３ｂからなる囲い３ｄとを備えている。
【００４０】
中空回転モーター３０は、図１ないし図３に示すように、上下に開口している中空部３１を有するリング状の回転子３２と、この回転子３２と同芯状に設けられるリング状のステータ３３とを備えて構成されている。回転子３２には、外周面に沿って複数個の永久磁石３４が埋設され、一方、ステータ３３には、これら永久磁石３４に対向するように多数のコイル３５が埋設されている。ステータ３３はリング状の支持部材３６と、懸垂支持部材３７とを介して中間カップ３ｂに固定的に懸垂支持されており、コイル３５に交流電流を流して発生する磁場の極性を切換え制御することで、固定されたステータ３３に対して回転子３２が一定方向に回転駆動されるようになっている。なお、懸垂支持部材３６は、後述する基板Ｗの搬入動作や、ノズル１１ａ、１１ｂ及び洗浄ブラシ１５ａ、１５ｂの水平移動の妨げとならない位置で支持部材３６を懸垂支持している。また、回転子３２とステータ３３との嵌合部分には加圧エアーが供給可能に構成されていて回転子３２が浮動状態に保持されて回転されるようになっている。
【００４１】
この構成の中空回転モーターに関しては、本願出願人が特願平８−２６６４３６号として提案しており、このように構成された中空回転モーター３０は、回転子３２及びステータ３３の中央部に任意の大きさの中空部を形成することができる。この実施例の中空回転モーター３０の中空部は、基板Ｗの直径よりも大きく形成されている。
【００４２】
各基板保持部材２０は、中空回転モーター３０の回転子３２に連結されている。図２、図３に示すように、各基板保持部材２０は、上下に揺動する単一の上爪２１とその左右両側に位置する一対の下爪２２とで構成されている。上爪２１は、その後端が回転子３２の上面に立設された支持軸２３に支点ｓ１を中心に上下に揺動可能に連結されている。一方、下爪２２は、その前後中間部が回転子３２の上面に立設された支持軸２４に支点ｓ２を中心に上下揺動可能に連結されている。
【００４３】
また、上爪２１の前後中間部と下爪２２の後端部とが、回転子３２に上下スライド可能に貫通装着した操作軸２５の上端部２５ａに、連結軸２６を介して枢支連結されている。各基板保持部材２０における操作軸２５の下端にはリング状の連結部材２７が取り付けられ、各操作軸２５が同時に上下にスライド変位可能に構成されている。なお、図３中の符号２８は、回転子３２に取り付け固定されたリング状のカバーであり、各支持軸２３、２４及び操作軸２５がこのカバー２８からシール状態で貫通されている。
【００４４】
図３（ｂ）に示すように、連結部材２７を図示しないエアーシリンダなどのアクチュエータで押し上げ操作することによって、各操作軸２５が上方にスライド変位される。これに伴って上爪２１が支点ｓ１を中心に上方に揺動されるとともに、下爪２２が支点ｓ２を中心に下方に揺動され、上爪２１及び下爪２２が開かれて基板Ｗの外周端縁から離れ、基板Ｗの保持が解除される。
【００４５】
また、図３（ａ）に示すように、連結部材２７の押し上げを解除して自重下降状態にすることによって、各操作軸２５が下方にスライド変位される。これに伴って上爪２１が支点ｓ１を中心に下方に揺動されるとともに、下爪２２が支点ｓ２を中心に上方に揺動される。その結果、左右の下爪２２の先端が基板Ｗの外周端縁を下方から係止するとともに、上爪２１の先端が基板Ｗの外周端縁を上方から係止し、基板Ｗが保持される状態となる。
【００４６】
なお、基板保持部材２０は図２、図３の構成に限定されず、各種の構成のものを採用することができる。
【００４７】
下カップ３ａは、下カップ昇降機構４０によって昇降可能に構成されており、一方、中間カップ３ｂは、装置フレームに取り付けられて固定されている。従って、図８に示すように、下カップ３ａが下降されると、下カップ３ａと中間カップ３ｂとが開かれ、基板保持部材２０の側方に開口４１が形成される。この開口４１を下方搬入出口として、下段の基板処理部１に対する基板Ｗの搬入・搬出が行えるようになっている。なお、下段の基板処理部１に対する基板Ｗの搬入・搬出は、図示しない基板搬送機構の基板保持アームが、下段の基板処理部１の囲い３ｄの内部に進入することで行われる。また、下段の基板処理部１で基板処理を行う際には、図１に示すように、下カップ３ａが上昇され、下カップ３ａと中間カップ３ｂとを閉じて、下方搬入出口４１を遮断する。なお、下カップ昇降機構４０や、以下に説明する各昇降機構は、エアシリンダやボールネジなどの周知の１軸方向駆動機構で構成されている。
【００４８】
下カップ３ａの下部には、排気・排液口４５が設けられている。この排気・排液口４５は、気液分離装置４６を介して、気体を吸引する排気部４７と排液ドレイン４８に接続されている。これにより、下段の基板処理部１の囲い３ｄ内の気体（雰囲気）が吸引されて排出（排気）できるとともに、下段の基板処理部１の囲い３ｄ内に生じた排液を排液ドレイン４８に排出できるようになっている。
【００４９】
下段の基板処理部１の囲い３ｄ内には、基板保持部材２０に保持された基板Ｗの上下両面に第１の薬液と純水とを選択的に供給するノズル１１ａ、１１ｂと、基板保持部材２０に保持された基板Ｗの上下両面を洗浄する洗浄ブラシ１５ａ、１５ｂとが設けられ、また、各ノズル１１ａ、１１ｂ及び各洗浄ブラシ１５ａ、１５ｂの退避空間１０も形成されている。
【００５０】
各ノズル１１ａ、１１ｂは、それぞれ図示しない支持アームに支持されている。これら支持アームを各々水平方向に移動させることで、図１の実線に示す、基板保持部材２０に保持された基板Ｗの上面、下面の各々の回転中心に第１の薬液と純水を供給する供給位置と、図１の二点鎖線に示す、基板保持部材２０に保持された基板Ｗの上面、下面から外れた退避空間１０内の所定の退避位置との間で各ノズル１１ａ、１１ｂが移動可能に構成されている。なお、各ノズル１１ａ、１１ｂ（支持アーム）を水平移動させる図示しない移動機構は、下カップ３ａの内壁面または中間カップ３ｂの下壁面に取り付けられている。また、各ノズル１１ａ、１１ｂへの第１の薬液と純水の供給は、処理液供給管１２ａ、１２ｂを介して処理液供給部１３から行われる。処理液供給部１３は、切換え弁の切り換えなどにより、処理液供給管１２ａ、１２ｂを介して各ノズル１１ａ、１１ｂに第１の薬液と純水とを選択的に供給できるように構成されている。
【００５１】
各洗浄ブラシ１５ａ、１５ｂも、それぞれ支持アーム１６ａ、１６ｂに支持されている。これら支持アーム１６ａ、１６ｂは、下カップ３ａの内壁面または中間カップ３ｂの下壁面に取り付けられた図示を省略した昇降・移動機構によって、各々昇降可能で、かつ水平移動可能に構成されている。アーム１６ａの昇降と水平移動とによって、洗浄ブラシ１５ａは、基板保持部材２０に保持された基板Ｗの上面の上方位置と、基板保持部材２０に保持された基板Ｗの上面から外れた退避空間１０内の所定の退避位置との間で移動できるとともに、基板保持部材２０に保持された基板Ｗの上面の上方位置と、基板Ｗの上面に接触、または、若干浮くように作用する所定高さ位置との間で昇降でき、かつ、基板Ｗの上面に作用した状態で、基板Ｗの上面に沿って基板Ｗの回転中心と外周部との間で往復移動できるように構成されている。洗浄ブラシ１５ｂも同様に、アーム１６ｂの昇降と水平移動とによって、基板保持部材２０に保持された基板Ｗの下面の下方位置と、基板保持部材２０に保持された基板Ｗの下面から外れた退避空間１０内の所定の退避位置との間で移動できるとともに、基板保持部材２０に保持された基板Ｗの下面の下方位置と、基板Ｗの下面に作用する所定高さ位置との間で昇降でき、かつ、基板Ｗの下面に作用した状態で、基板Ｗの下面に沿って基板Ｗの回転中心と外周部との間で往復移動できるように構成されている。
【００５２】
なお、支持アーム１６ａ、１６ｂに内設された図示しないモーターによって、各洗浄ブラシ１５ａ、１５ｂはそれぞれ図１の軸芯Ｒ１、Ｒ２周りで回転可能に構成されている。
【００５３】
上段の基板処理部２は、フッ酸などの第２の薬液を用いた薬液処理と、リンス処理及び乾燥処理とからなる第２の基板処理を行う基板処理部である。この基板処理部２は、基板Ｗを保持する基板保持機構５０と、基板保持機構５０に保持された基板Ｗを鉛直方向の軸芯Ｊ３周りで回転させる基板回転機構７０と、基板保持機構５０に保持された基板Ｗの周囲に配置される中間カップ３ｂ及び上カップ３ｃからなる囲い３ｕとを備えている。
【００５４】
基板保持機構５０は、基板Ｗの外周部を３箇所以上で保持する３個以上の保持部材５１がベースブロック５２の下面から懸垂されて構成されている。各保持部材５１は、先端部が鉤型形状を有していて、基板Ｗの外周部を下方から抱えるように支持するとともに、基板Ｗの外周端縁を押圧して基板Ｗを保持するように構成されている。
【００５５】
図４、図５に示すように、各保持部材５１はベースブロック５２内の揺動支点５３を中心に揺動可能に支持され、その先端部がベースブロック５２の下面に形成された長孔５４から下方に突出され、基端部は円柱状部材５５に回動自在に連結されている。各円柱状部材５５はリング状の載置台５６に載置されている。載置台５６はコイルバネ５７で上方に付勢され、各円柱状部材５５が上方に付勢される結果、図４（ａ）に示すように、各保持部材５１は閉状態になり、基板Ｗを保持することができる。なお、図中の符号５８は、閉状態の保持部材５１の位置を規制するストッパーである。各円柱状部材５５の上方にはリング状の押下部材５９が配置されている。エアシリンダ６０のロッド６０ａを伸長することで、揺動部材６１を介して、押下部材５９が下降させられ、この押下部材５９の下降により、図４（ｂ）に示すように、各円柱状部材５５及び載置台５６が下方に押し下げられ、各保持部材５１が揺動支点５３を中心に揺動される結果、各保持部材５１は開状態になり、基板Ｗの保持を解除することができる。以上の構成により、エアーシリンダ６０のロッド６０ａの伸縮により、基板Ｗの保持とその解除とが切り換えられる。なお、図中の符号６２は揺動部材６１の揺動支点を示す。
【００５６】
基板保持機構５０は、基板Ｗを保持した状態で、基板Ｗの上面とベースブロック５２の下面とが近接されるように構成されている。また、ベースブロック５２の下面は下方から見て円形であり、その径は基板Ｗの直径よりも大きくなるように構成されている。これにより、基板保持機構５０に基板Ｗが保持された状態で、基板Ｗの上面の上方は、ベースブロック５２の下面に覆われ、基板Ｗの上面とベースブロック５２の下面とが近接される結果、基板Ｗの上面とベースブロック５２の下面との間に局所空間６５が形成されることになる。
【００５７】
基板回転機構７０は、ベースブロック５２を懸垂支持する回転軸７１と、回転軸７１を回転させる中空回転モーター７２とを備えて構成されている。回転軸７１は、基端部が支持アーム７３に回転可能に支持され、先端部にベースブロック５２が一体回転可能に固設されている。中空回転モーター７２は、上述した下段の基板処理部１に備えている中空回転モーター３０と同様に、上下に開口した中空部を有するリング状の回転子７２ａと、この回転子７２ａと同芯状に設けられたリング状のステータ７２ｂとを備えて、ステータ７２ｂに対して回転子７２ａが回転駆動されるように構成されている。この中空回転モーター７２の回転子７２ａの中空部に回転軸７１が貫通された状態で、回転子７２ａと回転軸７１とが連結されている。一方、ステータ７２ｂは連結部材７４によって支持アーム７３に固定的に連結されている。この構成により、ステータ７２ｂに対して回転子７２ａを回転駆動することにより、回転軸７１とともにベースブロック５２が鉛直方向の軸芯Ｊ３周りで回転され、基板保持機構５０に保持された基板Ｗを鉛直方向の軸芯Ｊ３周りで回転させることができる。
【００５８】
支持アーム７３は、支持アーム昇降機構７５によって昇降可能に構成されている。この支持アーム７３の昇降により、基板保持機構５０に保持された基板Ｗの下面を、雰囲気遮断部材５の上部雰囲気遮断部材５ａの上面に対して接離できるようになっており、図１０に示すように、基板保持機構５０に保持された基板Ｗの下面が雰囲気遮断部材５の上部雰囲気遮断部材５ａに近接されたとき、基板Ｗの下面と上部雰囲気遮断部材５ａの上面との間に局所空間７６が形成されるようになっている。
【００５９】
図１、図４、図５に示すように、ベースブロック５２及び回転軸７１の内部には、処理液供給管８０が貫通されている。ベースブロック５２の下面に位置するこの処理液供給管８０の先端部が処理液供給口８０ａとなっている。処理液供給管８０の基端部は処理液供給部８１に接続されている。処理液供給部８１は、切換え弁の切り換えなどによって処理液供給管８０に第２の薬液と純水とを選択的に供給できるように構成されている。これにより、基板保持機構５０に保持された基板Ｗの上面に、処理液供給口８０ａから第２の薬液と純水とを選択的に供給できるようになっている。また、処理液供給管８０の周囲には外管８３が配設され、処理液供給管８０の外壁と外管８３の内壁との間の空間が気体供給路８４とされ、ベースブロック５２の下面に位置するこの気体供給路８４の先端部が気体供給口８４ａとなっている。気体供給路８４には、気体供給管８５を介して、気体供給部８６から、基板Ｗを乾燥するための窒素ガスなどの不活性ガスやドライエアなどの清浄な気体が供給されるようになっている。これにより、基板保持機構５０に保持された基板Ｗの上面とベースブロック５２の下面との間の局所空間６５に基板Ｗを乾燥させるための気体が供給できるようになっている。
【００６０】
上段の基板処理部４の囲い３ｕ内には、基板保持機構５０に保持された基板Ｗの下面に第２の薬液と純水とを選択的に供給するノズル８７が設けられている。このノズル８７は図示しない支持アームに支持されていて、この支持アームを水平方向に移動させることで、図１の実線に示す、基板保持機構５０に保持された基板Ｗの下面の回転中心に第２の薬液と純水を供給する供給位置と、図１の二点鎖線に示す、基板保持機構５０に保持された基板Ｗの下面から外れた退避空間１００内の所定の退避位置との間でノズル８７が移動可能に構成されている。なお、ノズル８７（支持アーム）を水平移動させる図示しない移動機構は、中間カップ３ｂの内壁面または上カップ３ｃの内壁面に取り付けられている。また、ノズル８７への第２の薬液と純水の供給は、処理液供給管８８を介して処理液供給部８９から行われる。処理液供給部８９は、切換え弁の切り換えなどによって処理液供給管８８を介してノズル８７に第２の薬液と純水とを選択的に供給できるように構成されている。
【００６１】
なお、上段の基板処理部４の囲い３ｕ内に形成された退避空間１００には、ノズル８７以外にも、後述するように雰囲気遮断部材５も退避されるようになっている。
【００６２】
上カップ３ｃは、上カップ昇降機構９１によって昇降可能に構成されている。図１１に示すように、固定された中間カップ３ｂに対して上カップ３ｃを上昇させると、上カップ３ｃと中間カップ３ｂとが開かれ、基板保持機構５０の側方に開口９２が形成される。この開口９２を上方搬入出口として、上段の基板処理部２に対する基板Ｗの搬出・搬入が、図示しない基板搬送機構の基板保持アームによって行われる。また、上段の基板処理部２で基板処理を行う際には、図１に示すように、上カップ３ｃが下降され、上カップ３ｃと中間カップ３ｂとを閉じて、上方搬入出口９２を遮断する。
【００６３】
中間カップ３ｂの下部には、排気・排液口９５が設けられている。この排気・排液口９５は、気液分離装置４６を介して、気体を吸引する排気部４７と排液ドレイン４８に接続されている。これにより、上段の基板処理部２の囲い３ｕ内の気体（雰囲気）が吸引されて排出（排気）できるとともに、上段の基板処理部２の囲い３ｕ内に生じた排液を排液ドレイン４８に排出できるようになっている。なお、図１では、下段の基板処理部１と上段の基板処理部２との排気、排液を共通の経路で行うように構成しているが、排気・排液口９５に、気液分離装置４６と別個の気液分離装置を介して、排液ドレイン４８と別の排液ドレインに接続して、下段の基板処理部１で生じた排液と上段の基板処理部２で生じた排液とを別々に排出できるように構成してもよい。
【００６４】
上カップ３ｃの上部には気体を導入するための開口９８が形成されている。この開口９８の上部には、ＵＬＰＡフィルタ（ultra low penetration air-filter）やＨＥＰＡフィルタ（high efficiency particulate air-filter）などの粉塵除去用のフィルター９９が配設され、清浄な気体が上段の基板処理部２の囲い３ｕ内に導入できるように構成されている。この開口９８からの気体の導入と、排気・排液口９５からの排気とによって、上段の基板処理部２の囲い３ｕ内の雰囲気を清浄な気体の雰囲気に置換できるように構成されている。
【００６５】
雰囲気遮断部材５は、上部雰囲気遮断部材５ａと下部雰囲気遮断部材５ｂとに分けられていて、これら各雰囲気遮断部材５ａ、５ｂが支持ブロック１０１の上下に回転自在に連結されて構成されている。
【００６６】
図６、図７に示すように、支持ブロック１０１は、支持アーム１０２の先端部に一体的に連結されている。支持アーム１０２の基端部は回動支軸１０３の上端部に一体的に連結されている。回動支軸１０３は、回動ブロック１０４に回動自在に支持されていて、回動ブロック１０４内に設けられたベルト伝動機構１０５を介してモーター１０６の回転軸に連動連結されている。モーター１０６を駆動することにより、回動支軸１０３が鉛直方向の軸芯Ｑ周りで回転され、支持アーム１０２が回動支軸１０３を揺動支点として水平方向に揺動されて、支持ブロック１０１とともに、上部雰囲気遮断部材５ａ及び下部雰囲気遮断回転部材５ｂが水平方向に移動され、図１の一点鎖線に示す基板受渡し開口４の上方位置と、図１、図７の二点鎖線に示す、基板受渡し開口４から外れた退避空間１００内の所定の退避位置との間で移動できるように構成されている。
【００６７】
また、回動ブロック１０４は、中間カップ３ｂの内壁に取り付けられた雰囲気遮断部材昇降機構１０７によって昇降可能に構成され、雰囲気遮断部材５が昇降されるようになっている。
【００６８】
上部雰囲気遮断部材５ａと下部雰囲気遮断部材５ｂとは、平面視で円形の形状に形成され、上部雰囲気遮断部材５ａの径ｒ１と基板受渡し開口４の径ｒ２と下部雰囲気遮断部材５ｂの径ｒ３との大小関係は、（ｒ１＞ｒ２＞ｒ３）となるように構成されている。従って、雰囲気遮断部材昇降機構１０７を駆動することにより、支持ブロック１０１とともに、上部雰囲気遮断部材５ａ及び下部雰囲気遮断部材５ｂが、図１、図６、図７の実線で示す基板受渡し開口４と、図１の一点鎖線に示す基板受渡し開口４の上方位置との間で昇降できるようになっている。なお、上部雰囲気遮断部材５ａ及び下部雰囲気遮断部材５ｂが図１、図６、図７の実線で示す基板受渡し開口４に位置した状態で、下段の基板処理部１の囲い３ｄ内の雰囲気と上段の基板処理部２の囲い３ｕ内の雰囲気とが遮断されるようになっている。また、基板受渡し開口４の径ｒ２は、基板Ｗの直径よりも大きくなるように構成している。
【００６９】
上部雰囲気遮断部材５ａの径ｒ１を基板受渡し開口４の径ｒ２よりも大きく（ｒ１＞ｒ２）したことにより、図１、図６、図７の実線で示すように上部雰囲気遮断部材５ａ及び下部雰囲気遮断部材５ｂが基板受渡し開口４に位置したとき、中間カップ３ｂの基板受渡し開口４の周縁部４ａが、上部雰囲気遮断部材５ａの下方に入り込んだ状態となり、下段の基板処理部１の囲い３ｄ内の雰囲気と上段の基板処理部２の囲い３ｕ内の雰囲気との遮断効果を高めることができる。
【００７０】
支持ブロック１０１内には、回転軸１１０が回転自在に支持されている。この回転軸１１０の上端部と下端部とにそれぞれに上部雰囲気遮断部材５ａと下部雰囲気遮断部材５ｂとが一体回転可能に連結されている。回転軸１１０は、ベルト伝動機構１１１を介してモーター１１２の回転軸に連動連結されていて、モーター１１２を駆動することによって、支持ブロック１０１に対して、上部雰囲気遮断部材５ａと下部雰囲気遮断部材５ｂとが鉛直方向に軸芯Ｊ１周りで回転されるように構成されている。
【００７１】
上部雰囲気遮断部材５ａの下面と下部雰囲気遮断部材５ｂの上面には、シリコンラバーやフッ素樹脂など形成されるリング状のリップシール部材１２０が一対ずつ取り付けられ、支持ブロック１０１の上面と上部雰囲気遮断部材５ａの下面との間、及び支持ブロック１０１の下面と下部雰囲気遮断部材５ｂの上面との間には、それぞれ気体供給バッファ１２１、１２２が形成されている。支持ブロック１０１及び支持アーム１０２内には、気体供給バッファ１２１に気体を供給する気体供給管１２３と気体供給バッファ１２２に気体を供給する気体供給管１２４とが配設されている。一方、上部雰囲気遮断部材５ａ内には、気体供給バッファ１２１内の気体を、上部雰囲気遮断部材５ａの上面の回転中心の気体供給口１２５に供給する気体供給路１２６が形成されている。気体供給口１２５の上方には傘状の部材１２７が設けられ、上方から落下する第２の薬液や純水が気体供給路１２６内に入り込むことを防止するようにしている。また、下部雰囲気遮断部材５ｂ内には、気体供給バッファ１２２内の気体を、下部雰囲気遮断部材５ｂの下面に設けられた多数の小孔で構成される気体供給口１２８に供給する気体供給路１２９が形成されている。
【００７２】
気体供給管１２３は気体供給部８６に接続され、気体供給部８６からの気体を気体供給管１２３、気体供給バッファ１２１、気体供給路１２６を介して、気体供給口１２５から噴出供給できるようになっている。
【００７３】
また、気体供給管１２４は、粉塵が除去されたエアなどの清浄な気体を供給する気体供給部１３０に接続され、気体供給部１３０からの気体を気体供給管１２４、気体供給バッファ１２２、気体供給路１２９を介して、各気体供給口１２８から下段の基板処理部１の囲い３ｄ内に噴出供給できるようになっている。この気体供給口１２８からの気体の供給と、排気・排液口４５からの排気とによって、下段の基板処理部１の囲い３ｄ内の雰囲気を清浄な気体の雰囲気に置換できるように構成されている。
【００７４】
なお、図では、気体供給バッファ１２１、１２２をリップシール部材１２０で形成したが、気体供給バッファ１２１、１２２をラビリンスシール構造で形成してもよい。
【００７５】
なお、中空回転モーター３０の回転中心軸Ｊ２と、基板回転機構７０の回転中心軸Ｊ３とは同軸となるように各部材が配設されている。また、基板受渡し開口４に位置した状態での上部雰囲気遮断部材５ａ及び下部雰囲気遮断部材５ｂの回転中心軸Ｊ１が、中空回転モーター３０の回転中心軸Ｊ２及び基板回転機構７０の回転中心軸Ｊ３と同軸となるように構成されている。
【００７６】
基板受渡し機構６は、昇降機構１４０によって昇降自在に構成された支持部材１４１の上面に３本以上の基板支持ピン１４２が立設されて構成されている。各基板支持ピン１４２は、下カップ３ａの底面に昇降自在に貫通されれている。昇降機構１４０は、支持部材１４１及び各基板支持ピン１４２を、図１に示す高さ、図９（ａ）に示す高さ、図９（ｂ）に示す高さの３段階の高さで昇降させることができ、これにより、後述するように各基板支持ピン１４２に基板Ｗを支持して、基板受渡し開口４を介して下段の基板処理部１内の基板保持部材２０と、上段の基板処理部２内の基板保持機構５０との間で基板Ｗを受け渡すことができるようになっている。
【００７７】
次に、上述した構成の実施例装置による基板処理の動作を説明する。
まず、図８に示すように、下カップ３ａを下降させて下方搬入出口４１を形成し、そこから未処理の基板Ｗを下段の基板処理部１に搬入し、基板保持部材２０に保持させる。
【００７８】
なお、この未処理の基板Ｗの搬入の際には、上段の基板処理部２において、第１の基板処理を先に終了した基板Ｗに対する第２の基板処理が行われている。また、このとき、雰囲気遮断部材５は基板受渡し開口４に位置し、上部雰囲気遮断部材５ａと下部雰囲気遮断部材５ｂとは軸芯Ｊ１周りで回転されていて、下上段の基板処理部１、２の雰囲気を遮断している。
【００７９】
下段の基板処理部１に対する基板Ｗの搬入が完了すると、下カップ３ａを上昇させて下方搬入出口４１を遮断し、下部雰囲気遮断部材５ｂの気体供給口１２８からの気体の供給を開始する。その状態で、下段の基板処理部１で以下のように第１の基板処理が行われる。
【００８０】
第１の基板処理は、まず、退避位置に退避されているノズル１１ａ、１１ｂを供給位置に移動させるとともに、退避位置に退避されている洗浄ブラシ１５ａ、１５ｂを、基板保持部材２０に保持された基板Ｗの上下両面の回転中心に作用させるように移動及び昇降させる。そして、基板保持部材２０の保持された基板Ｗを軸芯Ｊ２周りで回転させつつ、各ノズル１１ａ、１１ｂから基板Ｗの上下両面に第１の薬液を供給し、洗浄ブラシ１５ａ、１５ｂを基板Ｗの上下両面に沿わせてその回転中心と外周部との間を往復移動させて、第１の薬液を基板Ｗに供給しながら、基板Ｗの上下面全面を洗浄ブラシ１５ａ、１５ｂでブラシ洗浄する。なお、このとき、必要に応じて、洗浄ブラシ１５ａ、１５ｂを軸芯Ｒ１、Ｒ２周りで回転させながらブラシ洗浄してもよい。
【００８１】
第１の薬液と洗浄ブラシ１５ａ、１５ｂを用いた基板Ｗの洗浄処理を終えると、洗浄ブラシ１５ａ、１５ｂを退避位置に退避させ、基板Ｗを軸芯Ｊ２周りで回転させつつ、各ノズル１１ａ、１１ｂから基板Ｗの上下両面に純水を供給して、基板Ｗに付着している第１の薬液を洗い流す処理が行われ、それを終えると、各ノズル１１ａ、１１ｂを退避位置に退避させ、下段の基板処理部１で行う第１の基板処理を終了する。
【００８２】
なお、下段の基板処理部１で行う第１の基板処理に要する処理時間は、上段の基板処理部２で行う第２の基板処理に要する処理時間よりも長く設定している。従って、第１の基板処理が終了する前に、上段の基板処理部２において並行して行われている第２の基板処理は終了し、第２の基板処理を終了した基板Ｗは、後述するように上段の基板処理部２から搬出され、第１の基板処理が終了したときには、上段の基板処理部２は待機状態となっている。
【００８３】
下段の基板処理部１で行う第１の基板処理が終了すると、以下のように下段の基板処理部１から上段の基板処理部２への、第１の基板処理を終えた基板Ｗの受渡しが行われる。
【００８４】
この基板Ｗの受渡しは、まず、下部雰囲気遮断部材５ｂの気体供給口１２８からの気体の供給を停止するとともに、上部雰囲気遮断部材５ａと下部雰囲気遮断部材５ｂの回転を停止し、雰囲気遮断部材５の上昇と水平移動とにより雰囲気遮断部材５を退避位置に退避させて基板受渡し開口４を開く。次に、基板受渡し機構６の昇降機構１４０を駆動して、図９（ａ）に示すように、下段の基板処理部１の基板保持部材２０が保持する基板Ｗを載置支持する高さまで、各基板支持ピン１４２を上昇させる。この状態で、基板保持部材２０による基板Ｗの保持を解除して、基板保持部材２０から基板支持ピン１４２への基板Ｗの受渡しが行われる。そして、基板受渡し機構６の昇降機構１４０を駆動して、図９（ｂ）に示すように、基板支持ピン１４２に支持する基板Ｗを、基板受渡し開口４を介して上昇させ、上段の基板処理部２の基板保持機構５０の基板保持高さに位置させる。このとき、基板保持機構５０の保持部材５１は開かれている。この状態で、保持部材５１を閉じて、基板保持機構５０が基板Ｗを保持し、基板受渡し機構６の昇降機構１４０を駆動して、基板支持ピン１４２を図１に示している高さまで下降させることで、基板支持ピン１４２から基板保持機構５０への基板Ｗの受渡しが行われる。
【００８５】
基板Ｗの受渡しが完了すると、退避位置に退避されている雰囲気遮断部材５を水平移動させるとともに、下降させて基板受渡し開口４に位置させ、上部雰囲気遮断部材５ａと下部雰囲気遮断部材５ｂとを軸芯Ｊ１周りで回転させて、下上段の基板処理部１、２の雰囲気を遮断する。
【００８６】
基板Ｗの受渡しが完了すると、すぐに、新たな未処理基板Ｗが、上述したように下段の基板処理部１へ搬入され、その基板Ｗに対する第１の基板処理が行われる。
【００８７】
一方で、第１の基板処理を終えた基板Ｗを受け取った上段の基板処理部２では、その基板Ｗに対して以下のように第２の基板処理を行う。
【００８８】
第２の基板処理は、まず、退避位置に退避されているノズル８７を供給位置に移動させる。そして、図１に示す状態で、基板保持機構５０に保持された基板Ｗを軸芯Ｊ３周りで回転させつつ、ベースブロック５２の処理液供給口８０ａとノズル８７とから基板Ｗの上下両面に第２の薬液を供給し、第２の薬液を用いた薬液処理を行う。この薬液処理を所定時間行うと、次に、基板Ｗを軸芯Ｊ３周りで回転させた状態で、ベースブロック５２の処理液供給口８０ａとノズル８７とから基板Ｗの上下両面に純水を供給してリンス処理を行う。このリンス処理を所定時間行うと、次に、ベースブロック５２を下降させて、図１０に示すように、基板保持機構５０に保持された基板Ｗの下面を、上部雰囲気遮断部材５ａの上面に近接させる。この状態で、基板Ｗを軸芯Ｊ３周りで回転させて、基板Ｗに付着した純水を振り切り乾燥する。このとき、ベースブロック５２の気体供給口８４ａと上部雰囲気遮断部材５ａの気体供給口１２５とから気体を供給することで、基板Ｗの乾燥処理が促進される。なお、基板保持機構５０に保持された基板Ｗの上面とベースブロック５２の下面との間には局所空間６５が形成され、基板保持機構５０に保持された基板Ｗの下面と上部雰囲気遮断部材５ａの上面との間には局所空間７６が形成されているので、これら局所空間６５、７６内に気体が充満して、基板Ｗの上下面全面に均一に気体が拡げられ、基板Ｗの乾燥が均一に行える。
【００８９】
乾燥処理を終えると、ベースブロック５２を図１に示す元の高さ位置に上昇させて第２の基板処理を終了し、図１１に示すように、上カップ３ｃを上昇させて上方搬入出口９２を形成し、そこから処理済の基板Ｗを上段の基板処理部２の囲い３ｕの外部に搬出する。この基板Ｗの搬出を終えると、上カップ３ｃを下降させて上方搬入出口９２を遮断して、下段の基板処理部１で行われている次の基板Ｗに対する第１の基板処理が終了するまで待機する。
【００９０】
上述のようにして、次々と基板Ｗに第１の基板処理と第２の基板処理が行われていく。
【００９１】
この実施例装置によれば、第１の基板処理を行う基板処理部１と第２の基板処理を行う基板処理部２とを上下に積層したので、これら基板処理部を水平方向に並設していた従来装置に比べて、基板処理装置の設置面積を小さくすることができ、クリーンルームの有効利用を図ることができる。
【００９２】
また、各基板処理部１、２間の基板Ｗの受け渡しを、各基板処理部１、２の囲い３ｄ、３ｕの上下に形成された基板受け渡し開口４を介して行うように構成したので、一連の基板処理中に基板Ｗを外部雰囲気にさらすことがなく、基板Ｗの汚染などの低減を図ることができる。さらに、例えば、基板受け渡し機構６を、鉛直方向に積層した基板処理部１、２の囲い３ｄ、３ｕの外部に設置し、各基板処理部１、２間の基板Ｗの受け渡しを下段の基板処理部１の囲い３ｄから一端出して上段の基板処理部２の囲い３ｕ内に入れて行うように構成した場合に比べて、基板受け渡し機構６を、各基板処理部１、２の側方に並設しないぶんだけ、装置の設置面積を小さくでき、また、基板Ｗの受け渡し時間の短縮化が図れて、一連の基板処理のスループットを向上させることができる。
【００９３】
また、第１の基板処理中は、下カップ３ａと中間カップ３ｂとは閉じられて下方搬入出口４１が遮断されているので、下段の基板処理部１の囲い３ｄ内に、囲い３ｄ外の雰囲気が流れ込むのが防止され、囲い３ｄ外の雰囲気の影響を受けずに第１の基板処理が行えるとともに、下段の基板処理部１の囲い３ｄ内の雰囲気が囲い３ｄ外に漏れ出すことも防止できる。同様に、第２の基板処理中は、上カップ３ｃと中間カップ３ｂとは閉じられて上方搬入出口９２が遮断されているので、上段の基板処理部２の囲い３ｕ外の雰囲気の影響を受けずに第２の基板処理が行えるとともに、上段の基板処理部２の囲い３ｕ内の雰囲気が囲い３ｕ外に漏れ出すことも防止できる。
【００９４】
また、第１の基板処理及び第２の基板処理の処理中は、基板受渡し開口４は、雰囲気遮断部材５で閉じられているので、各基板処理部１、２の囲い３ｄ、３ｕ内の各雰囲気が遮断され、各基板処理部１、２は、互いに他方の基板処理部２、１の雰囲気の影響を受けずに各基板処理を行うことができる。このとき、上部及び下部雰囲気遮断部材５ａ、５ｂからなる雰囲気遮断部材５を回転させることにより、各基板処理部１、２の囲い３ｄ、３ｕ内の各雰囲気の遮断の上で、以下のような効果もある。
【００９５】
すなわち、これら上部及び下部雰囲気遮断部材５ａ、５ｂの回転によって形成される気流により、上段の基板処理部２の囲い３ｕ内の雰囲気が、中間カップ３ｂの基板受渡し開口４の周縁部４ａと、上部雰囲気遮断部材５ａとの間の隙間を通り抜けるのが阻止され、一方、下段の基板処理部１の囲い３ｄ内の雰囲気が、中間カップ３ｂの基板受渡し開口４の周縁部４ａと下部雰囲気遮断部材５ｂとの間の隙間を通り抜けるのも阻止されて、各基板処理部１、２の囲い３ｄ、３ｕ内の各雰囲気の遮断効果が高められる。
【００９６】
なお、上部雰囲気遮断部材５ａまたは／および下部雰囲気遮断部材５ｂの側面に気体供給口を設け、上部及び下部雰囲気遮断部材５ａ、５ｂを回転させている間、その気体供給口から気体を吹き出すように構成すれば、上部雰囲気遮断部材５ａまたは／および下部雰囲気遮断部材５ｂの側面に気体のカーテンが形成でき、この気体のカーテンによって、各基板処理部１、２の囲い３ｄ、３ｕ内の各雰囲気の遮断効果を一層高めることもできる。
【００９７】
また、上記実施例では、上段の基板処理部２で行う第２基板処理に第２の薬液や純水を用いているので、その処理液が下方の上部雰囲気遮断部材５ａの上面に落下するが、この上部雰囲気遮断部材５ａを回転させているので、この回転によって、上部雰囲気遮断部材５ａの上面に落下した処理液は上部雰囲気遮断部材５ａの側方に吹き飛ばされて、排気・排液口９５から排出され、下段の基板処理部１に流れ込むような不都合を防止することもできる。
【００９８】
さらに、下段の基板処理部１で行う第１の基板処理の間、下段の基板処理部１の囲い３ｄ内に新たな気体が供給されつつ、下段の基板処理部１の囲い３ｄ内の気体が排気されているので、下段の基板処理部１で行う第１の基板処理を終えた後に行われる、下段の基板処理部１から上段の基板処理部２への基板Ｗの受渡しを行うときには、下段の基板処理部１の囲い３ｄ内は清浄な気体の雰囲気となっていて、基板受渡し開口４が開かれても、上段の基板処理部２の囲い３ｕ内に第１の基板処理中の処理雰囲気が流れ込むような不都合も防止できる。また、基板Ｗの搬入のために下方搬入出口４１を形成しても、第１の薬液の雰囲気などが外部に漏れ出すような不都合も防止できる。同様に、上段の基板処理部２で行う第２の基板処理の間、上段の基板処理部２の囲い３ｕ内に新たな気体が導入されつつ、上段の基板処理部２の囲い３ｕ内の気体が排気されているので、下段の基板処理部１から上段の基板処理部２への基板Ｗの受渡しを行うときには、上段の基板処理部２の囲い３ｕ内は清浄な気体の雰囲気となっていて、基板受渡し開口４が開かれても、下段の基板処理部１の囲い３ｄ内に第２の基板処理中の処理雰囲気が流れ込むような不都合が防止でき、また、基板Ｗの搬出のために上方搬入出口９２を形成しても、第２の薬液の雰囲気などが外部に漏れ出すような不都合も防止できる。
【００９９】
また、下段の基板処理部１は、中央部に中空部が形成された中空回転モーター３０を構成する回転子３２に基板保持部材２０を連結して基板Ｗを保持するように構成しているので、保持された基板Ｗの鉛直下方に基板回転用の電動モーターや基板保持部材の支持台などの障害物を配置するのを回避して、保持された基板Ｗの周方向に中空回転モーター３０を配置でき、保持された基板Ｗの上面の上方空間および下面の下方空間から基板回転用の電動モーターや基板保持部材の支持台などの障害物を無くすことができ、中空回転モーター３０の中空部３１からも基板Ｗに基板処理を行うことができ、基板Ｗを回転して第１の基板処理を行う場合、基板Ｗの上下両面に対して同時に処理を行うことができる。また、保持された基板Ｗの周方向に中空回転モーター３０を配置しているので、下段の基板処理部１の高さを低くでき、基板処理装置全体の高さを低くすることができる。
【０１００】
また、基板処理中の薬液の雰囲気やブラシ洗浄などで生じるパーティクルは上方から下方に流れ易いが、上記実施例のように、ブラシ洗浄を下段の基板処理部１で行い、リンス処理や乾燥処理を上段の基板処理部２で行い、処理済の基板Ｗを上段の基板処理部２から搬出するように構成したことにより、処理済の基板Ｗに、第１の薬液の雰囲気やブラシ洗浄などで生じるパーティクルなどが再付着するのを防止でき、洗浄処理の仕上がり精度が低下することを防止できる。また、上段の基板処理部２で行う第２の基板処理の間、上段の基板処理部２の囲い３ｕ内に新たな気体が導入されつつ、上段の基板処理部２の囲い３ｕ内の気体が排気されているので、第２の薬液の雰囲気は第２の薬液による洗浄処理後に速やかに排出され、処理済の基板Ｗに第２の薬液が再付着するような不都合も防止されている。
【０１０１】
上記実施例では、ポリシング処理工程の次の洗浄工程の洗浄処理を行う装置を例に採り説明したが、その他の洗浄工程の洗浄処理を行う装置にも本発明を適用することができ、さらに、洗浄処理に限らず、その他の基板処理を行う装置にも本発明を適用することができる。
【０１０２】
また、上記実施例では、下段の基板処理部１に基板Ｗを搬入し、下段の基板処理部１での基板処理から始めて、下の基板処理部１から上の基板処理部２へと順に各基板処理部１、２における基板処理を行っていき、上段の基板処理部２での基板処理が終了すると、上段の基板処理部２から基板Ｗを搬出するようにしているが、基板処理の内容によっては、その逆の動作、すなわち、上段の基板処理部２に基板Ｗを搬入し、上段の基板処理部２での基板処理から始めて、上の基板処理部２から下の基板処理部１へと順に各基板処理部２、１における基板処理を行っていき、下段の基板処理部１での基板処理が終了すると、下段の基板処理部１から基板Ｗを搬出するようにしてもよい。
【０１０３】
また、上記実施例では、基板処理部を２個備えた場合を例示しているが、３個以上の基板処理部を備えた場合にも本発明は同様に適用することができる。なお、この場合、中間段の各基板処理部の基板回転手段として、基板の径より大きい中空部を有する中空回転モーターを用いれば、その中空回転モーターの中空部を介して基板の受渡しを行うことができる。
【０１０４】
【発明の効果】
以上の説明から明らかなように、請求項１に記載の発明によれば、一連の基板処理を複数に分けて行う複数個の基板処理部を鉛直方向に積層したので、基板処理装置の設置面積を小さくすることができ、クリーンルームの有効利用を図ることができる。
【０１０５】
また、各基板処理部間の基板の受け渡しを、各基板処理部の囲いの上下に形成された基板受け渡し開口を介して行うように構成したので、一連の基板処理中に基板を外部雰囲気にさらすことがなく、基板の汚染などの低減を図ることができる。さらに、例えば、基板受け渡し手段を、鉛直方向に積層した基板処理部の囲いの外部に設置し、各基板処理部間の基板の受け渡しを一旦基板処理部の囲いから出して次の基板処理部の囲い内に入れて行うように構成した場合に比べて、基板受け渡し手段を、基板処理部の側方に並設しないぶんだけ、装置の設置面積を小さくできるとともに、基板の受け渡し時間を短縮することができ、一連の基板処理のスループットが良くなる。
【０１０６】
また、各基板処理部の囲いの上下に形成された基板受け渡し開口を開閉する雰囲気遮断部材を備えるとともに、各雰囲気遮断部材を回転可能に構成したので、各基板処理部間の雰囲気を好適に遮断することができ、他の基板処理部内の雰囲気の影響を受けずに各基板処理部における基板処理を行え、基板処理精度を低下させることがない。
【０１０７】
さらに、基板の搬入搬出時にのみ下方搬入出口と上方搬入出口を形成するように構成し、基板の処理中は、基板の周囲に囲いが配設するので、外部雰囲気の影響を受けずに各基板処理を行えるとともに、各基板処理の雰囲気が外部に漏れ出すことも防止できる。
【０１０８】
請求項２に記載の発明によれば、各雰囲気遮断部材からその下方の基板処理部内に向けて気体を供給する気体供給手段を各雰囲気遮断部材に備えるとともに、最上段の基板処理部内に気体を導入する気体導入手段を最上段の基板処理部に設け、かつ、各基板処理部内の気体を排出する排気手段を各基板処理部に設けたので、各基板処理部内の雰囲気を新たな気体に置換でき、各基板処理部内の雰囲気を清浄に維持することができる。
【０１０９】
請求項３に記載の発明によれば、前記複数個の基板処理部の中の少なくとも一つの基板処理部の基板回転手段を中空回転モーターで構成するとともに、中空回転モーターを備えた基板処理部の基板保持手段は、基板の外周部を３箇所以上で保持する３個以上の基板保持部材を、中空回転モーターの回転子に連結して構成したので、その中空回転モーターを備えた基板処理部では基板の上下両面同時処理を行うことができる。また、その中空回転モーターを備えた基板処理部の高さを低くできるので、基板処理装置全体の高さを低くすることができる。
【０１１０】
請求項４に記載の発明によれば、下の基板処理部から上の基板処理部へと順に各基板処理部で一連の基板処理を行うように構成したので、後の基板処理中に、前の基板処理の雰囲気の影響を受け難くなり、最終的な基板の処理精度を高くすることができる。
【０１１１】
請求項５に記載の発明によれば、第１の薬液と洗浄具とを用いた基板処理、第２の薬液を用いた基板処理、リンス処理および／または乾燥処理からなる一連の基板処理を好適に実施することができる。
【図面の簡単な説明】
【図１】本発明の一実施例に係る基板処理装置の全体構成を示す縦断面図である。
【図２】下段の基板処理部の中空回転モーターと基板保持部材の構成を示す平面図である。
【図３】下段の基板処理部の中空回転モーターと基板保持部材の構成を示す要部縦断面図である。
【図４】上段の基板処理部の基板保持機構の構成を示す縦断面図である。
【図５】上段の基板処理部の基板保持機構の構成を示す横断面図である。
【図６】雰囲気遮断部材の構成を示す縦断面図である。
【図７】中間カップと雰囲気遮断部材の構成を示す平面図である。
【図８】下方搬入出口が形成された状態を示す縦断面図である。
【図９】各基板処理部間の基板の受渡しを示す縦断面図である。
【図１０】上段の基板処理部で乾燥処理を行う状態を示す縦断面図である。
【図１１】上方搬入出口が形成された状態を示す縦断面図である。
【符号の説明】
１、２：基板処理部
３ｄ、３ｕ：囲い
４：基板受渡し開口
５：雰囲気遮断部材
６：基板受渡し機構
２０：基板保持部材
３０：中空回転モーター
４０：下カップ昇降機構
５０：基板保持機構
７０：基板回転機構
９２：上カップ昇降機構
１０２、１１２：モーター
１０７：雰囲気遮断部材昇降機構
Ｗ：基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus for suitably performing a plurality of substrate processing on a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a substrate for an optical disk.
[0002]
[Prior art]
For example, in the cleaning process next to the polishing process, a brush cleaning process performed while supplying an alkaline chemical such as ammonia, a chemical process using an acid chemical such as hydrofluoric acid, a rinse process, and a drying process are included. A series of substrate processing is performed. In this substrate processing apparatus for performing a series of substrate processing, in order to separate the alkali atmosphere and the acid atmosphere, a first substrate processing unit that performs a brush cleaning process using an alkaline chemical solution, and a chemical solution process using an acid chemical solution And a second substrate processing unit that performs a rinsing process and a drying process. Each substrate processing unit includes a substrate holding mechanism for holding the substrate, a substrate rotating mechanism for rotating the substrate held by the substrate holding mechanism around a vertical axis, and the periphery of the substrate held by the substrate holding mechanism. An enclosure such as a cup or a chamber is provided.
[0003]
In this type of conventional substrate processing apparatus, these substrate processing units are arranged in the horizontal direction, and a substrate transfer robot for transferring substrates between the substrate processing units is provided between the substrate processing units. .
[0004]
[Problems to be solved by the invention]
However, in the conventional apparatus having such a configuration, since a plurality of substrate processing units are arranged in the horizontal direction, the installation area of the apparatus must be increased. Since this type of substrate processing apparatus is installed in a clean room where the running cost is high, there is a problem that if the installation area of the apparatus is large as in the conventional apparatus, the clean room cannot be effectively used.
[0005]
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus that can reduce the installation area of the apparatus.
[0006]
[Means for Solving the Problems]
In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is arranged around the substrate held by the substrate holding means, the substrate rotating means for rotating the substrate held by the substrate holding means, and the substrate held by the substrate holding means. N substrate processing units (n is a natural number greater than or equal to 2), each of which is individually stacked, and these substrate processing units are stacked in the vertical direction, and the i-th stage (i is 1 to (n-1) from the bottom. ) A natural number) above the enclosure of the substrate processing section and below the enclosure of the (i + 1) -th stage substrate processing section from below, the i-th stage substrate processing section from the bottom and (i + 1) from below Substrate delivery openings for delivering the substrate to and from the substrate treatment unit at the stage are formed, and the atmospheres of the upper and lower substrate treatment units are shut off at the respective substrate delivery openings (n−1). ) Each atmosphere blocking member and each of the atmosphere blocking members corresponding to the substrate (N-1) displacement means for individually displacing between the transfer opening and the retracted position deviated from the substrate transfer opening, and (n-1) atmosphere blocking members for rotating the atmosphere blocking members. (N-1) substrate transfer means for transferring a substrate between the upper and lower substrate processing portions through the substrate transfer openings and the substrate transfer openings, and loading / unloading of substrates to / from the lowermost substrate processing portion. In this case, a lower loading / unloading port for loading / unloading a substrate is formed in the enclosure of the lowermost substrate processing unit, and when performing substrate processing in the lowermost substrate processing unit, the lower loading / unloading port is shut off. When carrying out or carrying in / out the substrate to / from the lower loading / unloading means and the uppermost substrate processing unit, an upper loading / unloading port for loading / unloading the substrate is formed in the uppermost substrate processing unit. When performing substrate processing in the upper substrate processing section, An upper transfer port formed / interrupting means for interrupting the serial upward transfer port, is characterized in that it comprises a.
[0007]
According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, gas supply means for supplying gas from the respective atmosphere blocking members into the substrate processing portion below the respective atmospheric blocking members is provided in the respective atmospheric blocking members. In addition, a gas introducing means for introducing gas into the uppermost substrate processing section is provided in the uppermost substrate processing section, and an exhaust means for discharging the gas in each substrate processing section is provided for each substrate processing section. It is characterized by this.
[0008]
According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the first or second aspect, wherein the substrate rotating means of at least one of the plurality of substrate processing units has a hollow opened up and down. A substrate of a substrate processing unit comprising the hollow rotary motor including a rotor having a hollow portion and a stator having a hollow portion provided concentrically with the rotor and opened vertically The holding means is constituted by connecting three or more substrate holding members that hold the outer peripheral portion of the substrate at three or more locations to the rotor of the hollow rotary motor.
[0009]
According to a fourth aspect of the present invention, in the substrate processing apparatus according to any one of the first to third aspects, the series of substrate processing performed in each of the substrate processing units is carried into the lowermost substrate processing unit. Starting from the substrate processing in the lowermost substrate processing unit, the substrate processing in each substrate processing unit is performed in order from the lower substrate processing unit to the upper substrate processing unit, and the substrate processing in the uppermost substrate processing unit is completed. In this case, the substrate is unloaded from the uppermost substrate processing section.
[0010]
According to a fifth aspect of the present invention, in the substrate processing apparatus according to the fourth aspect, the substrate processing unit includes two substrate processing units, and the first substrate processing performed in the lower substrate processing unit includes the first chemical solution and A substrate processing using a cleaning tool, wherein the second substrate processing performed in the upper substrate processing unit is a substrate processing using a second chemical solution, a rinsing process and / or a drying process. Is.
[0011]
[Action]
The operation of the first aspect of the invention is as follows.
In each substrate processing unit, the substrate holding means holds the substrate, the substrate rotating means rotates the substrate, and individual substrate processing is performed in the enclosure while the substrate is rotated.
[0012]
These n substrate treatments are stacked in the vertical direction.
In the following description of the operation, unless otherwise specified, each substrate processing unit is arranged in order from the bottom, the first substrate processing unit (the lowest substrate processing unit), the second substrate processing unit, the third substrate. The processing unit,..., (N−1) -th substrate processing unit, and n-th substrate processing unit (uppermost substrate processing unit) will be described.
[0013]
Further, for example, a substrate delivery opening formed above the enclosure of the first stage substrate processing unit and below the enclosure of the second stage substrate processing unit is referred to as a [1-2] th substrate delivery opening. , Substrate transfer openings formed above the enclosure of the i-th stage (i is a natural number from 1 to (n-1)) and below the enclosure of the (i + 1) -th stage substrate treatment section [ In the following description, the i- (i + 1)] th substrate transfer opening is described.
[0014]
Further, for example, an atmosphere blocking member that is located at the [1-2] -th substrate transfer opening and blocks the atmosphere of the first-stage substrate processing unit and the atmosphere of the second-stage substrate processing unit [1-2] The atmosphere blocking member between the i-th substrate processing unit and the (i + 1) -th substrate processing unit is referred to as the [i- (i + 1)]-th atmosphere blocking member. I will explain.
[0015]
Further, for example, the displacement means for displacing the [1-2] th atmosphere blocking member between the [1-2] th substrate transfer opening and the retracted position deviated from the substrate transfer opening [1-2] The [i- (i + 1)]-th atmosphere blocking member is placed between the [i- (i + 1)]-th substrate transfer opening and the retracted position deviated from the substrate transfer opening. The displacement means to be displaced will be described as the [i- (i + 1)] th displacement means.
[0016]
Further, for example, the atmosphere blocking member rotating means for rotating the [1-2] th atmosphere blocking member is called the [1-2] th atmosphere blocking member rotating means, and the [i− (i + 1)] th atmosphere blocking is performed. The atmosphere blocking member rotating means for rotating the member will be described as [i- (i + 1)] th atmosphere blocking member rotating means.
[0017]
Further, for example, [1-2] substrate transfer means for transferring a substrate between the first-stage substrate processing section and the second-stage substrate processing section via the [1-2] -th substrate transfer opening. The substrate is transferred between the i-th substrate processing section and the (i + 1) -th substrate processing section through the [i- (i + 1)]-th substrate transfer opening as in the case of the th-th substrate transfer means. The substrate transfer means will be described as [i- (i + 1)] th substrate transfer means.
[0018]
Now, a series of substrate processing performed in each substrate processing unit is performed even if the substrate processing in each substrate processing unit is performed in order from the lower substrate processing unit to the upper substrate processing unit as defined in claim 4. Alternatively, conversely, the substrate processing in each substrate processing unit may be performed in order from the upper substrate processing unit to the lower substrate processing unit.
[0019]
A series of substrate processing in the former case is performed as follows.
First, the lower loading / unloading port forming / blocking means forms a lower loading / unloading port in the lowermost stage, that is, the enclosure of the first-stage substrate processing unit, from which an unprocessed substrate is loaded and the first-stage substrate is loaded. It is delivered to the substrate holding means of the processing unit. When the loading of the substrate is completed, the lower loading / unloading port forming / blocking means blocks the lower loading / unloading port. The [1-2] -th atmosphere blocking member is located at the [1-2] -th substrate transfer opening, and the atmosphere of the first-stage substrate processing unit and the atmosphere of the second-stage substrate processing unit are Blocked. Then, the [1-2] th atmosphere blocking member rotating means rotates the [1-2] th atmosphere blocking member, and in this state, the substrate processing in the first stage substrate processing section is performed.
[0020]
At this time, the enclosure of the first-stage substrate processing section prevents the external atmosphere from flowing into the first-stage substrate processing section and the atmosphere in the first-stage substrate processing section from leaking outside. Also, the [1-2] -th atmosphere blocking member causes the atmosphere in the second-stage substrate processing section to flow into the first-stage substrate processing section, and the atmosphere in the first-stage substrate processing section Leakage into the substrate processing unit is prevented. Moreover, the air flow formed by the rotation of the atmosphere blocking member can more effectively block the atmosphere between the first-stage substrate processing unit and the second-stage substrate processing unit. For example, when the substrate processing performed in the second-stage substrate processing unit uses a processing liquid, even if the processing liquid falls on the [1-2] -th atmosphere blocking member, this atmosphere By the rotation of the blocking member, the processing liquid is blown to the side of the atmosphere blocking member, and the processing liquid used in the second stage substrate processing unit can be prevented from entering the first stage substrate processing unit. Therefore, the substrate processing in the first-stage substrate processing unit can be performed without being influenced by the surrounding (particularly the second-stage substrate processing unit) atmosphere, and depending on the atmosphere in the first-stage substrate processing unit. It is possible to prevent the influence (especially the second stage substrate processing section) from being affected.
[0021]
When the substrate processing in the first-stage substrate processing section is completed, the [1-2] th displacement means displaces the [1-2] th atmosphere blocking member from the [1-2] th substrate transfer opening to the retracted position. Then, the [1-2] th substrate transfer opening is opened, and through this opening, the [1-2] th substrate transfer means passes the substrate after the substrate processing in the first-stage substrate processing unit, The first-stage substrate processing unit is handed over to the second-stage substrate processing unit.
[0022]
When the delivery of the substrate is completed, the [1-2] -th displacing means displaces the [1-2] -th atmosphere blocking member from the retracted position to the [1-2] -th substrate delivery opening, and the substrate delivery opening. And the atmosphere of the first-stage substrate processing unit and the atmosphere of the second-stage substrate processing unit are cut off. The [2-3] -th atmosphere blocking member is positioned at the [2-3] -th substrate transfer opening and blocks the atmosphere of the second-stage substrate processing unit from the atmosphere of the third-stage substrate processing unit. ing. Then, the [1-2] th atmosphere blocking member rotating means rotates the [1-2] th atmosphere blocking member and the [2-3] th atmosphere blocking member rotating means [2-3]. The second atmosphere blocking member is rotated, and in this state, the substrate processing in the second-stage substrate processing unit is performed.
[0023]
At this time, the enclosure of the second-stage substrate processing unit prevents the external atmosphere from flowing into the second-stage substrate processing unit and prevents the atmosphere in the second-stage substrate processing unit from leaking outside. In addition, the atmosphere in the first stage substrate processing section and the third stage substrate are provided by the [1-2] th atmosphere blocking member and the [2-3] th atmosphere blocking member above and below the second stage substrate processing section. It is possible to prevent the atmosphere in the processing section from flowing into the second stage substrate processing section and the atmosphere in the second stage substrate processing section from leaking to the first stage substrate processing section or the third stage substrate processing section. . Moreover, by rotating the [1-2] th atmosphere blocking member and the [2-3] th atmosphere blocking member above and below the second stage substrate processing section, the first stage substrate processing section and the second stage substrate processing section are rotated. It is possible to more effectively block the atmosphere between the second substrate processing section and the atmosphere between the third-stage substrate processing section and the second-stage substrate processing section. Further, for example, when the substrate processing performed in the third stage substrate processing unit uses a processing liquid, even if the processing liquid falls on the [2-3] -th atmosphere blocking member, this atmosphere By rotating the blocking member, the processing liquid is blown to the side of the atmosphere blocking member, and the processing liquid used in the third-stage substrate processing unit can be prevented from entering the second-stage substrate processing unit. Accordingly, the substrate processing in the second-stage substrate processing section can be performed without being affected by the surrounding atmosphere (particularly the first-stage substrate processing section or the third-stage substrate processing section). It is possible to prevent the influence (in particular, the first-stage substrate processing section or the third-stage substrate processing section) from being influenced by the atmosphere in the eye substrate processing section.
[0024]
Thereafter, similarly, the substrate processing in each substrate processing unit is executed in the same order as the substrate processing in the second stage substrate processing unit from the lower substrate processing unit to the upper substrate processing unit. Finally, substrate processing is performed in the uppermost stage, that is, the n-th stage substrate processing unit.
[0025]
In the substrate processing in the n-th substrate processing unit, the upper loading / unloading port in the enclosure of the n-th substrate processing unit is blocked by the upper loading / unloading port forming / blocking means, and [(n−1) −n]. The second atmosphere blocking member is located at the [(n-1) -n] th substrate transfer opening, and the atmosphere of the (n-1) -th substrate processing unit and the atmosphere of the n-th substrate processing unit are blocked. In addition, the [(n-1) -n] th atmosphere blocking member is rotated by the [(n-1) -n] th atmosphere blocking member rotating means. Thus, the substrate processing in the n-th substrate processing unit can be performed without being influenced by the atmosphere of the surroundings (particularly the (n-1) -th substrate processing unit), and the n-th substrate It is possible to prevent the atmosphere (in particular, the (n-1) -th stage substrate processing unit) from being influenced by the atmosphere in the processing unit.
[0026]
When the substrate processing in the n-th substrate processing unit is completed, the upper loading / unloading port forming / blocking means forms an upper loading / unloading port in the enclosure of the n-th substrate processing unit. Through this upper loading / unloading port, the processed substrate is taken out from the substrate holding means of the n-th substrate processing unit and is carried out of the enclosure of the n-th substrate processing unit.
[0027]
When the substrate processed in the first stage substrate processing unit is transferred from the first stage substrate processing unit to the second stage substrate processing unit, and the first substrate processing unit becomes processable, An unprocessed substrate is carried into the first-stage substrate processing section, and the substrate processing in the first-stage substrate processing section is performed in parallel with the substrate processing in the second-stage substrate processing section. Similarly, in the substrate processing unit above the second stage, the substrate processing in each substrate processing unit is performed in parallel, except when the substrate is transferred between the lower substrate processing unit and the upper substrate processing unit. Done.
[0028]
In the above description, the operation in the case of performing substrate processing in each substrate processing unit in order from the lower substrate processing unit to the upper substrate processing unit has been described, but in order from the upper substrate processing unit to the lower substrate processing unit When performing substrate processing in each substrate processing unit, an unprocessed substrate is carried into the nth substrate processing unit, substrate processing in the nth substrate processing unit, and (n-1) th substrate processing unit ,... A series of substrate processing is performed in the order of substrate processing in the second stage substrate processing unit, substrate processing in the first stage substrate processing unit, and processed substrates are transferred from the first stage substrate processing unit. Take it out. The details of substrate loading / unloading and substrate processing in each substrate processing unit are substantially the same as those in the case where the substrate processing in each substrate processing unit is sequentially performed from the lower substrate processing unit to the upper substrate processing unit. is there.
[0029]
According to the second aspect of the present invention, when substrate processing is performed in the first to (n-1) th stage substrate processing units, gas is supplied downward from the rotating atmosphere blocking member, A new gas is supplied into the substrate processing unit below the atmosphere blocking member, and the atmosphere in each substrate processing unit is exhausted by the exhaust means provided in each substrate processing unit. Thereby, in the first to (n-1) th stage substrate processing units, the atmosphere in each substrate processing unit can be replaced with a new gas atmosphere, and the atmosphere in each substrate processing unit can be kept clean. . The uppermost substrate processing unit introduces a new gas from the gas introduction unit into the uppermost substrate processing unit, and the exhausting unit provided in the uppermost substrate processing unit causes the uppermost substrate processing unit to The atmosphere is exhausted, and the atmosphere in the uppermost substrate processing unit can be kept clean.
[0030]
According to a third aspect of the present invention, the substrate rotating means of at least one of the plurality of substrate processing units is provided with a rotor having a hollow portion opened up and down, and concentric with the rotor. The substrate holding means of the substrate processing unit provided with a hollow rotary motor including a stator having a hollow portion opened up and down, and three substrate holding means for holding the outer peripheral portion of the substrate at three or more locations The above substrate holding member was connected to the rotor of a hollow rotary motor.
[0031]
In the substrate processing unit provided with the hollow rotary motor, the substrate is held at three or more locations on the outer peripheral portion by three or more substrate holding members connected to the rotor. The substrate is rotated together with the rotor and the substrate holding member, and a predetermined substrate processing is performed by rotating the held substrate.
[0032]
According to the hollow rotary motor having this configuration, since both the rotor and the stator have a hollow portion opened up and down, the hollow rotary motor is also formed with a hollow portion opened up and down, and the hollow is formed in the circumferential direction of the held substrate. A rotary motor can be arranged. Further, since the substrate holding member is connected to the rotor constituting the hollow rotary motor in which the hollow portion is formed and the substrate is held, the electric motor for rotating the substrate and the substrate holding member are arranged vertically below the held substrate. It is possible to avoid placing obstacles such as a support base. Accordingly, obstacles such as an electric motor for rotating the substrate and a support for the substrate holding member can be eliminated from the upper space on the upper surface and the lower space on the lower surface of the held substrate, and the hollow portion of the hollow rotary motor can also be applied to the substrate. Since substrate processing can be performed, when predetermined substrate processing is performed by rotating the substrate, processing can be performed simultaneously on the upper and lower surfaces of the substrate. In addition, since the hollow rotary motor can be arranged in the circumferential direction of the held substrate, the vertical dimension of the substrate processing unit provided with this hollow rotary motor can be reduced, and the vertical dimension of the entire substrate processing apparatus can be reduced. Can do.
[0033]
Of the n substrate processing units, only a part of the substrate processing units may be provided with the hollow rotary motor, or all the substrate processing units may be provided with the hollow rotary motor. .
[0034]
The invention described in claim 4 is to perform the substrate processing in each substrate processing unit in order from the lower substrate processing unit to the upper substrate processing unit, and the detailed operation thereof is described in claim 1 above. As described in the operation of the present invention.
[0035]
For example, when a series of substrate processing including brush cleaning processing, chemical processing, rinsing processing, and drying processing is performed, high processing accuracy is required as processing proceeds to subsequent substrate processing. In particular, when the last drying process is completed, it is necessary to consider that particles generated during brush cleaning will not be recontaminated in the atmosphere of the previous substrate processing, such as adhering to the substrate after the drying process. There is. On the other hand, when a series of substrate processing is performed by the substrate processing units stacked in the vertical direction, if there is a leak in the atmosphere blocking between the substrate processing units, the atmosphere in the upper substrate processing unit flows down into the lower substrate processing unit. Easy to do. Therefore, for example, if a series of substrate processing is performed in each substrate processing unit in order from the upper substrate processing unit to the lower substrate processing unit, the atmosphere of the previous substrate processing is affected during the subsequent substrate processing. It becomes easy. On the other hand, if a series of substrate processing is performed in each substrate processing unit in order from the lower substrate processing unit to the upper substrate processing unit, the influence of the atmosphere of the previous substrate processing is affected during the subsequent substrate processing. It becomes difficult to receive, and the processing accuracy of the final substrate can be increased.
[0036]
According to the invention described in claim 5, two substrate processing units (n = 2) are provided, and these two substrate processing units are stacked in the vertical direction. First, the lower (first stage) substrate processing unit is provided. An untreated substrate is carried into the substrate, where the substrate processing using the first chemical solution and the cleaning tool is performed, and then the substrate processing using the second chemical solution is performed in the upper (second stage) substrate processing unit. Then, a rinsing process and / or a drying process are performed, and the processed substrate is unloaded from the upper substrate processing unit.
[0037]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a longitudinal sectional view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention. In addition, in the longitudinal cross-sectional view of FIG.1 and FIGS. 8-11, only the longitudinal cross-sectional shape of a lower cup, an intermediate cup, and an upper cup is shown.
[0038]
In this apparatus, two substrate processing units 1 and 2 are stacked in the vertical direction, and each of the intermediate cups 3b disposed between the lower substrate processing unit 1 and the upper substrate processing unit 2 is disposed on each of the intermediate cups 3b. A circular substrate delivery opening 4 is formed in plan view for delivering the substrate W between the substrate processing units 1 and 2. Further, an atmosphere blocking member 5 is provided at the substrate transfer opening 4 to block the atmosphere of the lower substrate processing unit 1 from the atmosphere of the upper substrate processing unit 2. As will be described later, the atmosphere blocking member 5 is configured to be rotatable around a vertical axis J1 and is displaceable between the substrate transfer opening 4 and a retracted position removed from the substrate transfer opening 4. It is configured. Further, a substrate transfer mechanism 6 is provided for transferring the substrate W between the lower substrate processing unit 1 and the upper substrate processing unit 2 through the substrate transfer opening 4.
[0039]
The lower substrate processing unit 1 is a substrate processing unit that performs a cleaning process on the substrate W, which is a first substrate process, using a first chemical solution such as ammonia and cleaning brushes 15a and 15b as cleaning tools. The substrate processing unit 1 rotates three or more substrate holding members 20 that hold the outer peripheral portion of the substrate W at three or more positions, and the substrate W held by the substrate holding member 20 around the axis J2 in the vertical direction. A hollow rotary motor 30 and an enclosure 3d including a lower cup 3a and an intermediate cup 3b disposed around the substrate W held by the substrate holding member 20 are provided.
[0040]
As shown in FIGS. 1 to 3, the hollow rotary motor 30 includes a ring-shaped rotor 32 having a hollow portion 31 that is open upward and downward, and a ring-shaped stator provided concentrically with the rotor 32. 33. A plurality of permanent magnets 34 are embedded along the outer peripheral surface of the rotor 32, while a number of coils 35 are embedded in the stator 33 so as to face the permanent magnets 34. The stator 33 is fixedly suspended from the intermediate cup 3b via a ring-shaped support member 36 and a suspension support member 37, and controls the polarity of the magnetic field generated by passing an alternating current through the coil 35. Thus, the rotor 32 is driven to rotate in a fixed direction with respect to the fixed stator 33. The suspension support member 36 suspends and supports the support member 36 at a position that does not interfere with the loading operation of the substrate W described later and the horizontal movement of the nozzles 11a and 11b and the cleaning brushes 15a and 15b. Further, the fitting portion between the rotor 32 and the stator 33 is configured so that pressurized air can be supplied, and the rotor 32 is held in a floating state and rotated.
[0041]
Regarding the hollow rotary motor having this configuration, the applicant of the present application has proposed as Japanese Patent Application No. 8-266436, and the hollow rotary motor 30 configured in this way is arbitrarily arranged at the center of the rotor 32 and the stator 33. A hollow portion having a size can be formed. The hollow portion of the hollow rotary motor 30 of this embodiment is formed larger than the diameter of the substrate W.
[0042]
Each substrate holding member 20 is connected to a rotor 32 of a hollow rotary motor 30. As shown in FIGS. 2 and 3, each substrate holding member 20 includes a single upper claw 21 that swings up and down and a pair of lower claws 22 that are positioned on both the left and right sides thereof. The upper claw 21 is connected to a support shaft 23 whose rear end is erected on the upper surface of the rotor 32 so as to swing up and down around a fulcrum s1. On the other hand, the lower claw 22 is connected to a support shaft 24 erected on the upper surface of the rotor 32 so that the front and rear intermediate portions can swing up and down around a fulcrum s2.
[0043]
Further, the front / rear intermediate portion of the upper claw 21 and the rear end portion of the lower claw 22 are pivotally connected to an upper end portion 25a of an operation shaft 25 that is slidably attached to the rotor 32 through a connecting shaft 26. ing. A ring-shaped connecting member 27 is attached to the lower end of the operation shaft 25 in each substrate holding member 20, and each operation shaft 25 is configured to be slidable up and down simultaneously. 3 is a ring-shaped cover attached and fixed to the rotor 32, and the support shafts 23 and 24 and the operation shaft 25 are passed through the cover 28 in a sealed state.
[0044]
As shown in FIG. 3B, each operation shaft 25 is slid upward by pushing up the connecting member 27 with an actuator such as an air cylinder (not shown). Accordingly, the upper claw 21 is swung upward about the fulcrum s1, and the lower claw 22 is swung downward about the fulcrum s2, and the upper claw 21 and the lower claw 22 are opened to open the substrate W. The substrate W is released from the outer peripheral edge and released.
[0045]
Further, as shown in FIG. 3A, the operation shaft 25 is slid downward by releasing the pushing-up of the connecting member 27 to bring the weight down. Accordingly, the upper claw 21 is swung downward about the fulcrum s1, and the lower claw 22 is swung upward about the fulcrum s2. As a result, the tips of the left and right lower claws 22 lock the outer peripheral edge of the substrate W from below, and the tips of the upper claws 21 lock the outer peripheral edge of the substrate W from above, thereby holding the substrate W. It becomes a state.
[0046]
In addition, the board | substrate holding member 20 is not limited to the structure of FIG. 2, FIG. 3, The thing of various structures is employable.
[0047]
The lower cup 3a is configured to be movable up and down by the lower cup lifting mechanism 40, while the intermediate cup 3b is fixed to the apparatus frame. Therefore, as shown in FIG. 8, when the lower cup 3 a is lowered, the lower cup 3 a and the intermediate cup 3 b are opened, and an opening 41 is formed on the side of the substrate holding member 20. With this opening 41 as a lower loading / unloading port, loading / unloading of the substrate W to / from the lower substrate processing unit 1 can be performed. The loading / unloading of the substrate W to / from the lower substrate processing unit 1 is performed when a substrate holding arm (not shown) of the substrate transport mechanism enters the enclosure 3d of the lower substrate processing unit 1. Further, when substrate processing is performed in the lower substrate processing unit 1, the lower cup 3a is raised, the lower cup 3a and the intermediate cup 3b are closed, and the lower loading / unloading port 41 is shut off, as shown in FIG. . The lower cup elevating mechanism 40 and each elevating mechanism described below are configured by a known uniaxial driving mechanism such as an air cylinder or a ball screw.
[0048]
An exhaust / drainage port 45 is provided at the lower portion of the lower cup 3a. The exhaust / drainage port 45 is connected to an exhaust part 47 for sucking gas and a drainage drain 48 via a gas / liquid separator 46. As a result, the gas (atmosphere) in the enclosure 3d of the lower substrate processing unit 1 can be sucked and discharged (exhaust), and the drainage generated in the enclosure 3d of the lower substrate processing unit 1 can be discharged to the drainage drain 48. It can be discharged.
[0049]
Within the enclosure 3d of the lower substrate processing unit 1, nozzles 11a and 11b for selectively supplying the first chemical solution and pure water to the upper and lower surfaces of the substrate W held by the substrate holding member 20, and the substrate holding member Cleaning brushes 15a and 15b for cleaning the upper and lower surfaces of the substrate W held by 20 are provided, and a retreat space 10 for the nozzles 11a and 11b and the cleaning brushes 15a and 15b is also formed.
[0050]
Each nozzle 11a, 11b is supported by a support arm (not shown). By moving these support arms in the horizontal direction, the first chemical solution and pure water are supplied to the respective rotation centers of the upper surface and the lower surface of the substrate W held by the substrate holding member 20 shown by the solid line in FIG. The nozzles 11a and 11b move between the supply position and a predetermined retraction position in the retraction space 10 that is out of the upper and lower surfaces of the substrate W held by the substrate holding member 20 as shown by a two-dot chain line in FIG. It is configured to be possible. A moving mechanism (not shown) that horizontally moves the nozzles 11a and 11b (support arms) is attached to the inner wall surface of the lower cup 3a or the lower wall surface of the intermediate cup 3b. The first chemical solution and pure water are supplied to the nozzles 11a and 11b from the processing liquid supply unit 13 through the processing liquid supply pipes 12a and 12b. The processing liquid supply unit 13 is configured to selectively supply the first chemical liquid and pure water to the nozzles 11a and 11b through the processing liquid supply pipes 12a and 12b by switching the switching valve or the like. .
[0051]
The cleaning brushes 15a and 15b are also supported by the support arms 16a and 16b, respectively. The support arms 16a and 16b are configured to be movable up and down and horizontally movable by a lifting and moving mechanism (not shown) attached to the inner wall surface of the lower cup 3a or the lower wall surface of the intermediate cup 3b. The cleaning brush 15 a moves upward and downward from the upper surface of the substrate W held by the substrate holding member 20 and the retreat space 10 separated from the upper surface of the substrate W held by the substrate holding member 20 by moving the arm 16 a up and down and horizontally. And a predetermined height position that acts so as to contact or slightly float on the upper surface of the substrate W held by the substrate holding member 20 and the upper surface of the substrate W. And can move back and forth between the center of rotation of the substrate W and the outer peripheral portion along the upper surface of the substrate W while acting on the upper surface of the substrate W. Similarly, the cleaning brush 15b is moved up and down and horizontally moved by the arm 16b so that the lower position of the lower surface of the substrate W held by the substrate holding member 20 and the retreating from the lower surface of the substrate W held by the substrate holding member 20 are removed. It can move between a predetermined retreat position in the space 10 and can move up and down between a lower position of the lower surface of the substrate W held by the substrate holding member 20 and a predetermined height position acting on the lower surface of the substrate W. In addition, it is configured to be able to reciprocate between the rotation center of the substrate W and the outer peripheral portion along the lower surface of the substrate W while acting on the lower surface of the substrate W.
[0052]
The cleaning brushes 15a and 15b are configured to be rotatable around the shaft centers R1 and R2 in FIG. 1 by motors (not shown) provided in the support arms 16a and 16b, respectively.
[0053]
The upper substrate processing unit 2 is a substrate processing unit that performs a second substrate process including a chemical process using a second chemical solution such as hydrofluoric acid, a rinse process, and a drying process. The substrate processing unit 2 includes a substrate holding mechanism 50 that holds the substrate W, a substrate rotating mechanism 70 that rotates the substrate W held by the substrate holding mechanism 50 around the vertical axis J3, and a substrate holding mechanism 50. An enclosure 3u including an intermediate cup 3b and an upper cup 3c arranged around the held substrate W is provided.
[0054]
The substrate holding mechanism 50 is configured by three or more holding members 51 that hold the outer peripheral portion of the substrate W at three or more positions suspended from the lower surface of the base block 52. Each holding member 51 has a saddle shape at the tip, supports the outer peripheral portion of the substrate W from below, and holds the substrate W by pressing the outer peripheral edge of the substrate W. It is configured.
[0055]
As shown in FIGS. 4 and 5, each holding member 51 is supported so as to be able to swing around a swing fulcrum 53 in the base block 52, and a long hole 54 formed at the tip of the lower surface of the base block 52. The base end portion is pivotably connected to the columnar member 55. Each columnar member 55 is mounted on a ring-shaped mounting table 56. The mounting table 56 is urged upward by the coil spring 57, and each columnar member 55 is urged upward. As a result, as shown in FIG. Can be held. In addition, the code | symbol 58 in a figure is a stopper which regulates the position of the holding member 51 of a closed state. A ring-shaped pressing member 59 is disposed above each columnar member 55. By extending the rod 60a of the air cylinder 60, the pressing member 59 is lowered through the swinging member 61, and as the pressing member 59 is lowered, as shown in FIG. 55 and the mounting table 56 are pushed down, and each holding member 51 is swung around the rocking fulcrum 53. As a result, each holding member 51 is opened and the holding of the substrate W can be released. With the above configuration, the holding and releasing of the substrate W are switched by the expansion and contraction of the rod 60a of the air cylinder 60. Note that reference numeral 62 in the figure denotes a swing fulcrum of the swing member 61.
[0056]
The substrate holding mechanism 50 is configured such that the upper surface of the substrate W and the lower surface of the base block 52 are brought close to each other while holding the substrate W. Further, the bottom surface of the base block 52 is circular when viewed from below, and the diameter thereof is configured to be larger than the diameter of the substrate W. As a result, the upper surface of the substrate W is covered with the lower surface of the base block 52 while the substrate W is held by the substrate holding mechanism 50, and the upper surface of the substrate W and the lower surface of the base block 52 are brought close to each other. A local space 65 is formed between the upper surface of the substrate W and the lower surface of the base block 52.
[0057]
The substrate rotation mechanism 70 includes a rotation shaft 71 that supports the base block 52 in a suspended manner, and a hollow rotation motor 72 that rotates the rotation shaft 71. The rotating shaft 71 has a base end portion rotatably supported by the support arm 73, and a base block 52 fixed to the distal end portion so as to be integrally rotatable. As with the hollow rotary motor 30 provided in the lower substrate processing unit 1 described above, the hollow rotary motor 72 includes a ring-shaped rotor 72a having a hollow portion opened up and down, and a concentric shape with the rotor 72a. And the rotor 72a is rotationally driven with respect to the stator 72b. The rotor 72a and the rotary shaft 71 are connected in a state where the rotary shaft 71 is passed through the hollow portion of the rotor 72a of the hollow rotary motor 72. On the other hand, the stator 72 b is fixedly connected to the support arm 73 by a connecting member 74. With this configuration, by rotating the rotor 72a with respect to the stator 72b, the base block 52 is rotated around the axis J3 in the vertical direction together with the rotating shaft 71, and the substrate W held by the substrate holding mechanism 50 is vertically moved. Can be rotated about a direction axis J3.
[0058]
The support arm 73 is configured to be movable up and down by a support arm lifting mechanism 75. By raising and lowering the support arm 73, the lower surface of the substrate W held by the substrate holding mechanism 50 can be brought into contact with and separated from the upper surface of the upper atmosphere blocking member 5a of the atmosphere blocking member 5, as shown in FIG. As described above, when the lower surface of the substrate W held by the substrate holding mechanism 50 is brought close to the upper atmosphere blocking member 5a of the atmosphere blocking member 5, a local space is formed between the lower surface of the substrate W and the upper surface of the upper atmosphere blocking member 5a. 76 is formed.
[0059]
As shown in FIGS. 1, 4, and 5, a processing liquid supply pipe 80 passes through the base block 52 and the rotating shaft 71. A distal end portion of the processing liquid supply pipe 80 located on the lower surface of the base block 52 serves as a processing liquid supply port 80a. The base end of the processing liquid supply pipe 80 is connected to the processing liquid supply unit 81. The processing liquid supply unit 81 is configured to selectively supply the second chemical liquid and pure water to the processing liquid supply pipe 80 by switching a switching valve or the like. Thus, the second chemical liquid and pure water can be selectively supplied from the processing liquid supply port 80 a to the upper surface of the substrate W held by the substrate holding mechanism 50. An outer tube 83 is disposed around the processing liquid supply pipe 80, and a space between the outer wall of the processing liquid supply pipe 80 and the inner wall of the outer pipe 83 serves as a gas supply path 84. The front end of the gas supply path 84 located at is a gas supply port 84a. A clean gas such as an inert gas such as nitrogen gas or dry air for drying the substrate W is supplied to the gas supply path 84 from the gas supply unit 86 via the gas supply pipe 85. Yes. Thereby, the gas for drying the substrate W can be supplied to the local space 65 between the upper surface of the substrate W held by the substrate holding mechanism 50 and the lower surface of the base block 52.
[0060]
A nozzle 87 that selectively supplies the second chemical solution and pure water to the lower surface of the substrate W held by the substrate holding mechanism 50 is provided in the enclosure 3 u of the upper substrate processing unit 4. The nozzle 87 is supported by a support arm (not shown). By moving the support arm in the horizontal direction, the nozzle 87 is moved to the center of rotation of the lower surface of the substrate W held by the substrate holding mechanism 50 shown by the solid line in FIG. 2 between the supply position for supplying the chemical solution and pure water and a predetermined retreat position in the retreat space 100 that is out of the lower surface of the substrate W held by the substrate holding mechanism 50, as indicated by a two-dot chain line in FIG. The nozzle 87 is configured to be movable. A moving mechanism (not shown) that horizontally moves the nozzle 87 (support arm) is attached to the inner wall surface of the intermediate cup 3b or the inner wall surface of the upper cup 3c. Further, the second chemical liquid and pure water are supplied to the nozzle 87 from the processing liquid supply unit 89 via the processing liquid supply pipe 88. The processing liquid supply unit 89 is configured to be able to selectively supply the second chemical liquid and pure water to the nozzle 87 via the processing liquid supply pipe 88 by switching a switching valve or the like.
[0061]
In addition to the nozzle 87, the atmosphere blocking member 5 is also retracted in the retreat space 100 formed in the enclosure 3u of the upper substrate processing unit 4 as described later.
[0062]
The upper cup 3 c is configured to be movable up and down by an upper cup lifting mechanism 91. As shown in FIG. 11, when the upper cup 3 c is raised with respect to the fixed intermediate cup 3 b, the upper cup 3 c and the intermediate cup 3 b are opened, and an opening 92 is formed on the side of the substrate holding mechanism 50. . With this opening 92 as the upper loading / unloading port, the substrate W is unloaded / loaded into / from the upper substrate processing unit 2 by a substrate holding arm of a substrate transport mechanism (not shown). Further, when the substrate processing is performed in the upper substrate processing section 2, as shown in FIG. 1, the upper cup 3c is lowered, the upper cup 3c and the intermediate cup 3b are closed, and the upper loading / unloading port 92 is shut off. .
[0063]
An exhaust / drainage port 95 is provided in the lower part of the intermediate cup 3b. The exhaust / drainage port 95 is connected to an exhaust unit 47 for sucking gas and a drainage drain 48 via a gas / liquid separator 46. Thereby, the gas (atmosphere) in the enclosure 3u of the upper substrate processing unit 2 can be sucked and discharged (exhaust), and the drainage generated in the enclosure 3u of the upper substrate processing unit 2 can be discharged to the drainage drain 48. It can be discharged. In FIG. 1, the lower substrate processing unit 1 and the upper substrate processing unit 2 are configured to perform exhaust and drainage through a common path. It is connected to a drainage drain 48 and another drainage drain through a gas-liquid separation device separate from the apparatus 46, and the drainage generated in the lower substrate processing unit 1 and the drainage generated in the upper substrate processing unit 2 are connected. You may comprise so that a liquid can be discharged | emitted separately.
[0064]
An opening 98 for introducing gas is formed in the upper part of the upper cup 3c. A filter 99 for removing dust such as an ULPA filter (ultra low penetration air-filter) or a HEPA filter (high efficiency particulate air-filter) is disposed on the upper portion of the opening 98, so that clean gas is processed into the upper substrate. It can be introduced into the enclosure 3u of the section 2. By introducing the gas from the opening 98 and exhausting from the exhaust / drainage port 95, the atmosphere in the enclosure 3u of the upper substrate processing unit 2 can be replaced with a clean gas atmosphere.
[0065]
The atmosphere blocking member 5 is divided into an upper atmosphere blocking member 5a and a lower atmosphere blocking member 5b, and these atmosphere blocking members 5a and 5b are rotatably connected to the upper and lower sides of the support block 101.
[0066]
As shown in FIGS. 6 and 7, the support block 101 is integrally connected to the distal end portion of the support arm 102. The base end portion of the support arm 102 is integrally connected to the upper end portion of the rotation support shaft 103. The rotation support shaft 103 is rotatably supported by the rotation block 104 and is linked to the rotation shaft of the motor 106 through a belt transmission mechanism 105 provided in the rotation block 104. By driving the motor 106, the rotation support shaft 103 is rotated around the vertical axis Q, and the support arm 102 is swung in the horizontal direction with the rotation support shaft 103 as a swing fulcrum, thereby supporting block 101. At the same time, the upper atmosphere blocking member 5a and the lower atmosphere blocking rotating member 5b are moved in the horizontal direction, and the upper position of the substrate delivery opening 4 shown by the one-dot chain line in FIG. 1 and the substrate shown by the two-dot chain line in FIGS. It is configured to be able to move between a predetermined retreat position in the retreat space 100 that is out of the delivery opening 4.
[0067]
The rotating block 104 is configured to be movable up and down by an atmosphere blocking member lifting mechanism 107 attached to the inner wall of the intermediate cup 3b, and the atmosphere blocking member 5 is lifted and lowered.
[0068]
The upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b are formed in a circular shape in plan view, and have a diameter r1 of the upper atmosphere blocking member 5a, a diameter r2 of the substrate delivery opening 4, and a diameter r3 of the lower atmosphere blocking member 5b. Is configured to satisfy (r1>r2> r3). Accordingly, by driving the atmosphere blocking member elevating mechanism 107, the upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b together with the support block 101 are moved to the substrate delivery opening 4 shown by the solid lines in FIGS. It can be moved up and down between the upper position of the substrate delivery opening 4 shown by the one-dot chain line in FIG. The upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b are positioned in the substrate delivery opening 4 shown by the solid lines in FIGS. 1, 6, and 7, and the atmosphere in the enclosure 3d of the lower substrate processing unit 1 and the upper stage The atmosphere in the enclosure 3u of the substrate processing unit 2 is cut off. Further, the diameter r2 of the substrate delivery opening 4 is configured to be larger than the diameter of the substrate W.
[0069]
Since the diameter r1 of the upper atmosphere blocking member 5a is larger than the diameter r2 of the substrate delivery opening 4 (r1> r2), the upper atmosphere blocking member 5a and the lower atmosphere are shown as shown by the solid lines in FIGS. When the blocking member 5b is positioned in the substrate transfer opening 4, the peripheral edge 4a of the substrate transfer opening 4 of the intermediate cup 3b enters the lower part of the upper atmosphere blocking member 5a, and the inside of the enclosure 3d of the lower substrate processing unit 1 And the atmosphere in the enclosure 3u of the upper substrate processing unit 2 can be improved.
[0070]
A rotating shaft 110 is rotatably supported in the support block 101. The upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b are connected to the upper end portion and the lower end portion of the rotating shaft 110 so as to be integrally rotatable. The rotating shaft 110 is linked to the rotating shaft of the motor 112 via the belt transmission mechanism 111. By driving the motor 112, the upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b are connected to the support block 101. Are rotated around the axis J1 in the vertical direction.
[0071]
A pair of ring-shaped lip seal members 120 formed of silicon rubber, fluorine resin or the like are attached to the lower surface of the upper atmosphere blocking member 5a and the upper surface of the lower atmosphere blocking member 5b. Gas supply buffers 121 and 122 are formed between the lower surface of 5a and between the lower surface of the support block 101 and the upper surface of the lower atmosphere blocking member 5b, respectively. A gas supply pipe 123 that supplies gas to the gas supply buffer 121 and a gas supply pipe 124 that supplies gas to the gas supply buffer 122 are disposed in the support block 101 and the support arm 102. On the other hand, a gas supply path 126 for supplying the gas in the gas supply buffer 121 to the gas supply port 125 at the center of rotation on the upper surface of the upper atmosphere blocking member 5a is formed in the upper atmosphere blocking member 5a. An umbrella-shaped member 127 is provided above the gas supply port 125 to prevent the second chemical solution or pure water falling from above from entering the gas supply path 126. Further, in the lower atmosphere blocking member 5b, a gas supply path 129 for supplying the gas in the gas supply buffer 122 to the gas supply port 128 constituted by a number of small holes provided on the lower surface of the lower atmosphere blocking member 5b. Is formed.
[0072]
The gas supply pipe 123 is connected to the gas supply unit 86, and the gas from the gas supply unit 86 can be supplied from the gas supply port 125 through the gas supply pipe 123, the gas supply buffer 121, and the gas supply path 126. ing.
[0073]
The gas supply pipe 124 is connected to a gas supply unit 130 that supplies a clean gas such as air from which dust has been removed, and the gas from the gas supply unit 130 is supplied to the gas supply pipe 124, the gas supply buffer 122, and the gas supply. Via the passage 129, the gas can be supplied from each gas supply port 128 into the enclosure 3 d of the lower substrate processing unit 1. The atmosphere in the enclosure 3d of the lower substrate processing unit 1 can be replaced with a clean gas atmosphere by supplying the gas from the gas supply port 128 and exhausting from the exhaust / drainage port 45. Yes.
[0074]
In the figure, the gas supply buffers 121 and 122 are formed by the lip seal member 120, but the gas supply buffers 121 and 122 may be formed by a labyrinth seal structure.
[0075]
Each member is disposed so that the rotation center axis J2 of the hollow rotary motor 30 and the rotation center axis J3 of the substrate rotation mechanism 70 are coaxial. Further, the rotation center axis J1 of the upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b in the state positioned in the substrate delivery opening 4 is the rotation center axis J2 of the hollow rotation motor 30 and the rotation center axis J3 of the substrate rotation mechanism 70. It is configured to be coaxial.
[0076]
The substrate delivery mechanism 6 is configured such that three or more substrate support pins 142 are erected on the upper surface of a support member 141 configured to be movable up and down by an elevating mechanism 140. Each substrate support pin 142 is penetrated by the bottom face of the lower cup 3a so that raising / lowering is possible. The elevating mechanism 140 elevates and lowers the support member 141 and each substrate support pin 142 at three stages of the height shown in FIG. 1, the height shown in FIG. 9A, and the height shown in FIG. 9B. Accordingly, as will be described later, the substrate holding member 20 in the lower substrate processing section 1 is supported via the substrate delivery opening 4 by supporting the substrate W on each substrate support pin 142 and the upper substrate processing. The substrate W can be delivered to and from the substrate holding mechanism 50 in the unit 2.
[0077]
Next, the operation of substrate processing by the embodiment apparatus having the above-described configuration will be described.
First, as shown in FIG. 8, the lower cup 3 a is lowered to form a lower loading / unloading port 41, from which an unprocessed substrate W is loaded into the lower substrate processing unit 1 and held by the substrate holding member 20.
[0078]
When the unprocessed substrate W is carried in, the upper substrate processing unit 2 performs the second substrate processing on the substrate W that has finished the first substrate processing first. At this time, the atmosphere blocking member 5 is located in the substrate delivery opening 4, and the upper atmosphere blocking member 5 a and the lower atmosphere blocking member 5 b are rotated around the axis J 1, and the lower and upper substrate processing units 1, 2 are rotated. Is blocking the atmosphere.
[0079]
When the loading of the substrate W into the lower substrate processing unit 1 is completed, the lower cup 3a is raised to block the lower loading / unloading port 41, and the supply of gas from the gas supply port 128 of the lower atmosphere blocking member 5b is started. In this state, the first substrate processing is performed in the lower substrate processing unit 1 as follows.
[0080]
In the first substrate processing, first, the nozzles 11a and 11b retracted to the retracted position are moved to the supply position, and the cleaning brushes 15a and 15b retracted to the retracted position are held by the substrate holding member 20. The substrate W is moved and moved up and down so as to act on the rotation centers of the upper and lower surfaces of the substrate W. Then, while rotating the substrate W held by the substrate holding member 20 around the axis J2, the first chemical solution is supplied from the nozzles 11a and 11b to the upper and lower surfaces of the substrate W, and the cleaning brushes 15a and 15b are moved to the substrate W. The upper and lower surfaces of the substrate W are brush-cleaned with the cleaning brushes 15a and 15b while the first chemical solution is supplied to the substrate W by reciprocating between the rotation center and the outer peripheral portion along the upper and lower surfaces of the substrate. . At this time, brush cleaning may be performed while rotating the cleaning brushes 15a and 15b around the shaft centers R1 and R2 as necessary.
[0081]
When the cleaning process of the substrate W using the first chemical solution and the cleaning brushes 15a and 15b is finished, the cleaning brushes 15a and 15b are retracted to the retracted position, and the nozzles 11a and 15a are rotated while the substrate W is rotated around the axis J2. The pure water is supplied from 11b to the upper and lower surfaces of the substrate W to wash away the first chemical liquid adhering to the substrate W. When the processing is completed, the nozzles 11a and 11b are retracted to the retracted positions. The first substrate processing performed in the lower substrate processing unit 1 is completed.
[0082]
The processing time required for the first substrate processing performed in the lower substrate processing unit 1 is set longer than the processing time required for the second substrate processing performed in the upper substrate processing unit 2. Therefore, before the first substrate processing is completed, the second substrate processing performed in parallel in the upper substrate processing unit 2 is completed, and the substrate W that has completed the second substrate processing will be described later. Thus, when the first substrate processing is completed after being unloaded from the upper substrate processing unit 2, the upper substrate processing unit 2 is in a standby state.
[0083]
When the first substrate processing performed in the lower substrate processing unit 1 is completed, the delivery of the substrate W after the first substrate processing is transferred from the lower substrate processing unit 1 to the upper substrate processing unit 2 as follows. Done.
[0084]
In the delivery of the substrate W, first, the supply of gas from the gas supply port 128 of the lower atmosphere blocking member 5b is stopped, and the rotation of the upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b is stopped. The atmosphere blocking member 5 is retracted to the retracted position by raising and horizontally moving the substrate transfer opening 4. Next, the lifting mechanism 140 of the substrate delivery mechanism 6 is driven to a height at which the substrate W held by the substrate holding member 20 of the lower substrate processing unit 1 is placed and supported, as shown in FIG. Each substrate support pin 142 is raised. In this state, the holding of the substrate W by the substrate holding member 20 is released, and the transfer of the substrate W from the substrate holding member 20 to the substrate support pins 142 is performed. Then, the lifting mechanism 140 of the substrate delivery mechanism 6 is driven to raise the substrate W supported by the substrate support pins 142 through the substrate delivery opening 4 as shown in FIG. The substrate holding mechanism 50 of the unit 2 is positioned at the substrate holding height. At this time, the holding member 51 of the substrate holding mechanism 50 is opened. In this state, the holding member 51 is closed, the substrate holding mechanism 50 holds the substrate W, and the lifting mechanism 140 of the substrate delivery mechanism 6 is driven to lower the substrate support pins 142 to the height shown in FIG. As a result, the substrate W is delivered from the substrate support pins 142 to the substrate holding mechanism 50.
[0085]
When the delivery of the substrate W is completed, the atmosphere blocking member 5 retracted to the retracted position is horizontally moved and lowered to be positioned at the substrate delivery opening 4 so that the upper atmosphere blocking member 5a and the lower atmosphere blocking member 5b are pivoted. The atmosphere of the lower and upper substrate processing units 1 and 2 is blocked by rotating around the core J1.
[0086]
As soon as the delivery of the substrate W is completed, a new unprocessed substrate W is carried into the lower substrate processing unit 1 as described above, and the first substrate processing is performed on the substrate W.
[0087]
On the other hand, the upper substrate processing unit 2 that has received the substrate W after the first substrate processing performs the second substrate processing on the substrate W as follows.
[0088]
In the second substrate processing, first, the nozzle 87 retracted to the retracted position is moved to the supply position. In the state shown in FIG. 1, the substrate W held by the substrate holding mechanism 50 is rotated around the axis J <b> 3, and the first and second surfaces of the substrate W are changed from the processing liquid supply port 80 a and the nozzle 87 of the base block 52. The chemical solution 2 is supplied and chemical treatment using the second chemical solution is performed. If this chemical processing is performed for a predetermined time, then, pure water is supplied to the upper and lower surfaces of the substrate W from the processing solution supply port 80a and the nozzle 87 of the base block 52 in a state where the substrate W is rotated around the axis J3. And rinse. When this rinsing process is performed for a predetermined time, the base block 52 is then lowered, and the lower surface of the substrate W held by the substrate holding mechanism 50 is brought close to the upper surface of the upper atmosphere blocking member 5a as shown in FIG. Let In this state, the substrate W is rotated around the axis J3, and the pure water adhering to the substrate W is shaken off and dried. At this time, the drying process of the substrate W is promoted by supplying the gas from the gas supply port 84a of the base block 52 and the gas supply port 125 of the upper atmosphere blocking member 5a. A local space 65 is formed between the upper surface of the substrate W held by the substrate holding mechanism 50 and the lower surface of the base block 52, and the lower surface of the substrate W held by the substrate holding mechanism 50 and the upper atmosphere blocking member 5a. Since the local space 76 is formed between the upper surface and the lower surface of the substrate W, the local spaces 65 and 76 are filled with gas, and the gas is uniformly spread over the entire upper and lower surfaces of the substrate W, so that the substrate W is dried. Can be done uniformly.
[0089]
When the drying process is completed, the base block 52 is raised to the original height position shown in FIG. 1 to finish the second substrate process, and the upper cup 3c is raised to move the upper loading / unloading port 92 as shown in FIG. And the processed substrate W is carried out of the enclosure 3u of the upper substrate processing unit 2 from there. When the unloading of the substrate W is completed, the upper cup 3c is lowered to block the upper loading / unloading port 92 until the first substrate processing for the next substrate W performed in the lower substrate processing unit 1 is completed. stand by.
[0090]
As described above, the first substrate processing and the second substrate processing are sequentially performed on the substrate W.
[0091]
According to this embodiment apparatus, since the substrate processing unit 1 for performing the first substrate processing and the substrate processing unit 2 for performing the second substrate processing are stacked vertically, these substrate processing units are arranged in parallel in the horizontal direction. Compared to the conventional apparatus, the installation area of the substrate processing apparatus can be reduced, and the clean room can be effectively used.
[0092]
Further, since the transfer of the substrate W between the substrate processing units 1 and 2 is performed through the substrate transfer openings 4 formed above and below the enclosures 3d and 3u of the substrate processing units 1 and 2, the series During the substrate processing, the substrate W is not exposed to the external atmosphere, and the contamination of the substrate W can be reduced. Further, for example, the substrate transfer mechanism 6 is installed outside the enclosures 3d and 3u of the substrate processing units 1 and 2 stacked in the vertical direction, and the transfer of the substrate W between the substrate processing units 1 and 2 is performed in the lower substrate processing. Compared to the case where the substrate transfer mechanism 6 is arranged so as to protrude from the enclosure 3d of the section 1 and into the enclosure 3u of the upper substrate processing section 2, the substrate transfer mechanism 6 is arranged in parallel to the side of each of the substrate processing sections 1 and 2. As long as it is not provided, the installation area of the apparatus can be reduced, the transfer time of the substrate W can be shortened, and the throughput of a series of substrate processing can be improved.
[0093]
In addition, during the first substrate processing, the lower cup 3a and the intermediate cup 3b are closed and the lower loading / unloading port 41 is shut off, so that the atmosphere outside the enclosure 3d is inside the enclosure 3d of the lower substrate processing unit 1. Can be prevented, the first substrate processing can be performed without being affected by the atmosphere outside the enclosure 3d, and the atmosphere inside the enclosure 3d of the lower substrate processing section 1 can also be prevented from leaking outside the enclosure 3d. . Similarly, during the second substrate processing, the upper cup 3c and the intermediate cup 3b are closed and the upper loading / unloading port 92 is blocked, so that it is affected by the atmosphere outside the enclosure 3u of the upper substrate processing unit 2. In addition, the second substrate processing can be performed, and the atmosphere in the enclosure 3u of the upper substrate processing unit 2 can be prevented from leaking out of the enclosure 3u.
[0094]
Further, during the processing of the first substrate processing and the second substrate processing, the substrate delivery opening 4 is closed by the atmosphere blocking member 5, so that each of the enclosures 3 d and 3 u of the respective substrate processing units 1 and 2 is provided. The atmosphere is shut off, and each substrate processing unit 1, 2 can perform each substrate processing without being affected by the atmosphere of the other substrate processing unit 2, 1. At this time, by rotating the atmosphere blocking member 5 including the upper and lower atmosphere blocking members 5a and 5b, each atmosphere in the enclosures 3d and 3u of the substrate processing units 1 and 2 is blocked, as follows. There is also an effect.
[0095]
That is, due to the airflow formed by the rotation of the upper and lower atmosphere blocking members 5a and 5b, the atmosphere in the enclosure 3u of the upper substrate processing unit 2 is changed to the peripheral portion 4a of the substrate transfer opening 4 of the intermediate cup 3b and the upper portion. The atmosphere in the enclosure 3d of the lower substrate processing unit 1 is prevented from passing through the gap between the atmosphere blocking member 5a and the peripheral portion 4a of the substrate transfer opening 4 of the intermediate cup 3b and the lower atmosphere blocking member 5b. Is prevented from passing through the gap between the substrate processing units 1 and 2, and the shielding effect of each atmosphere in the enclosures 3d and 3u of the substrate processing units 1 and 2 is enhanced.
[0096]
A gas supply port is provided on the side surface of the upper atmosphere blocking member 5a and / or the lower atmosphere blocking member 5b, and gas is blown out from the gas supply port while the upper and lower atmosphere blocking members 5a and 5b are rotated. If configured, a gas curtain can be formed on the side surface of the upper atmosphere blocking member 5a and / or the lower atmosphere blocking member 5b. By this gas curtain, each atmosphere in the enclosures 3d and 3u of the substrate processing units 1 and 2 can be formed. The blocking effect can be further enhanced.
[0097]
Moreover, in the said Example, since the 2nd chemical | medical solution and pure water are used for the 2nd board | substrate process performed by the upper stage substrate processing part 2, the process liquid falls on the upper surface of the lower upper atmosphere blocking member 5a. Since the upper atmosphere blocking member 5a is rotated, the processing liquid dropped on the upper surface of the upper atmosphere blocking member 5a by this rotation is blown to the side of the upper atmosphere blocking member 5a, and the exhaust / drain port 95 is discharged. It is also possible to prevent inconvenience such as being discharged from the substrate and flowing into the lower substrate processing unit 1.
[0098]
Further, during the first substrate processing performed in the lower substrate processing unit 1, a new gas is supplied into the enclosure 3d of the lower substrate processing unit 1, while the gas in the enclosure 3d of the lower substrate processing unit 1 is changed. When the substrate W is transferred from the lower substrate processing unit 1 to the upper substrate processing unit 2 after the first substrate processing performed in the lower substrate processing unit 1 is finished, The inside of the enclosure 3d of the substrate processing unit 1 is a clean gas atmosphere, and even if the substrate delivery opening 4 is opened, the processing atmosphere during the first substrate processing is contained in the enclosure 3u of the upper substrate processing unit 2. It is possible to prevent inconvenience such as flowing in. Moreover, even if the lower loading / unloading port 41 is formed for loading the substrate W, it is possible to prevent the inconvenience that the atmosphere of the first chemical solution leaks to the outside. Similarly, during the second substrate processing performed in the upper substrate processing unit 2, a new gas is introduced into the enclosure 3u of the upper substrate processing unit 2, and the gas in the enclosure 3u of the upper substrate processing unit 2 is introduced. When the substrate W is transferred from the lower substrate processing unit 1 to the upper substrate processing unit 2, the inside of the enclosure 3u of the upper substrate processing unit 2 is in a clean gas atmosphere. Even if the substrate delivery opening 4 is opened, it is possible to prevent the inconvenience that the processing atmosphere during the second substrate processing flows into the enclosure 3d of the lower substrate processing unit 1, and the upper portion for unloading the substrate W. Even if the loading / unloading port 92 is formed, the inconvenience that the atmosphere of the second chemical solution leaks to the outside can be prevented.
[0099]
Further, the lower substrate processing unit 1 is configured to hold the substrate W by connecting the substrate holding member 20 to the rotor 32 constituting the hollow rotary motor 30 having a hollow portion formed in the center. The hollow rotary motor 30 is disposed in the circumferential direction of the held substrate W by avoiding the placement of an obstacle such as an electric motor for rotating the substrate or a support for the substrate holding member vertically below the held substrate W. An obstacle such as an electric motor for rotating the substrate and a support for the substrate holding member can be eliminated from the upper space on the upper surface and the lower space on the lower surface of the held substrate W, and the hollow portion 31 of the hollow rotary motor 30 can be eliminated. In addition, the substrate processing can be performed on the substrate W, and when the substrate W is rotated to perform the first substrate processing, the upper and lower surfaces of the substrate W can be simultaneously processed. Further, since the hollow rotary motor 30 is arranged in the circumferential direction of the held substrate W, the height of the lower substrate processing unit 1 can be reduced, and the overall height of the substrate processing apparatus can be reduced.
[0100]
Also, particles generated by chemical atmosphere or brush cleaning during substrate processing are likely to flow downward from above. However, as in the above embodiment, brush cleaning is performed in the lower substrate processing unit 1 to perform rinsing processing and drying processing. Since the upper substrate processing unit 2 is configured to carry out the processed substrate W from the upper substrate processing unit 2, the processed substrate W is generated in the atmosphere of the first chemical solution, brush cleaning, or the like. Particles and the like can be prevented from reattaching, and the finishing accuracy of the cleaning process can be prevented from being lowered. Further, during the second substrate processing performed in the upper substrate processing unit 2, a new gas is introduced into the enclosure 3u of the upper substrate processing unit 2, and the gas in the enclosure 3u of the upper substrate processing unit 2 is changed. Since the air is exhausted, the atmosphere of the second chemical liquid is quickly discharged after the cleaning process with the second chemical liquid, and the inconvenience of the second chemical liquid reattaching to the processed substrate W is prevented.
[0101]
In the above embodiment, the description has been given by taking as an example the apparatus for performing the cleaning process of the cleaning process subsequent to the polishing process, but the present invention can also be applied to apparatuses for performing the cleaning process of other cleaning processes, The present invention can be applied not only to a cleaning process but also to an apparatus that performs other substrate processing.
[0102]
Further, in the above embodiment, the substrate W is loaded into the lower substrate processing unit 1, and the substrate processing in the lower substrate processing unit 1 is started, and then the lower substrate processing unit 1 to the upper substrate processing unit 2 are sequentially performed. Substrate processing in the substrate processing units 1 and 2 is performed, and when the substrate processing in the upper substrate processing unit 2 is completed, the substrate W is unloaded from the upper substrate processing unit 2. Depending on the reverse operation, that is, the substrate W is carried into the upper substrate processing unit 2 and the substrate processing in the upper substrate processing unit 2 is started, and then the upper substrate processing unit 2 moves to the lower substrate processing unit 1. The substrate processing in each of the substrate processing units 2 and 1 may be performed in order, and when the substrate processing in the lower substrate processing unit 1 is completed, the substrate W may be unloaded from the lower substrate processing unit 1.
[0103]
In the above embodiment, the case where two substrate processing units are provided is illustrated, but the present invention can be similarly applied to a case where three or more substrate processing units are provided. In this case, if a hollow rotary motor having a hollow portion larger than the diameter of the substrate is used as the substrate rotating means of each substrate processing unit in the intermediate stage, the substrate is delivered via the hollow portion of the hollow rotary motor. Can do.
[0104]
【The invention's effect】
As is clear from the above description, according to the invention described in claim 1, since the plurality of substrate processing units for performing a series of substrate processing in a plurality of parts are stacked in the vertical direction, the installation area of the substrate processing apparatus is Can be made small, and the clean room can be effectively used.
[0105]
In addition, since the substrate is transferred between the substrate processing units through the substrate transfer openings formed above and below the enclosure of each substrate processing unit, the substrate is exposed to the external atmosphere during a series of substrate processing. Therefore, the contamination of the substrate can be reduced. Further, for example, the substrate transfer means is installed outside the enclosure of the substrate processing units stacked in the vertical direction, and the substrate transfer between each substrate processing unit is once taken out of the enclosure of the substrate processing unit and the next substrate processing unit Compared to the case where it is configured so as to be placed in an enclosure, the substrate transfer means can be reduced by reducing the substrate installation time and reducing the substrate transfer time by not arranging the substrate transfer means in parallel to the side of the substrate processing unit. And the throughput of a series of substrate processing is improved.
[0106]
In addition, it has an atmosphere blocking member that opens and closes the substrate transfer openings formed above and below the enclosure of each substrate processing unit, and each atmosphere blocking member is configured to be rotatable so that the atmosphere between the substrate processing units is preferably blocked. The substrate processing in each substrate processing unit can be performed without being affected by the atmosphere in other substrate processing units, and the substrate processing accuracy is not lowered.
[0107]
Furthermore, it is configured to form a lower loading / unloading port and an upper loading / unloading port only when loading and unloading the substrate. Since the enclosure is provided around the substrate during the processing of the substrate, each substrate is not affected by the external atmosphere. In addition to processing, it is possible to prevent the atmosphere of each substrate processing from leaking outside.
[0108]
According to the second aspect of the present invention, each atmosphere blocking member is provided with gas supply means for supplying gas from each atmosphere blocking member toward the substrate processing section below the atmosphere blocking member, and the gas is supplied into the uppermost substrate processing section. Since the gas introduction means to be introduced is provided in the uppermost substrate processing section and the exhaust means for exhausting the gas in each substrate processing section is provided in each substrate processing section, the atmosphere in each substrate processing section is replaced with a new gas. And the atmosphere in each substrate processing unit can be kept clean.
[0109]
According to a third aspect of the present invention, the substrate rotation means of at least one substrate processing unit among the plurality of substrate processing units is configured by a hollow rotation motor, and the substrate processing unit including the hollow rotation motor is provided. Since the substrate holding means is configured by connecting three or more substrate holding members that hold the outer peripheral portion of the substrate at three or more locations to the rotor of the hollow rotary motor, the substrate processing unit equipped with the hollow rotary motor Simultaneous upper and lower surface processing of the substrate can be performed. Moreover, since the height of the substrate processing part provided with the hollow rotary motor can be reduced, the overall height of the substrate processing apparatus can be reduced.
[0110]
According to the invention described in claim 4, since a series of substrate processing is performed in each substrate processing unit in order from the lower substrate processing unit to the upper substrate processing unit, during the subsequent substrate processing, It becomes difficult to be affected by the atmosphere of the substrate processing, and the processing accuracy of the final substrate can be increased.
[0111]
According to the invention described in claim 5, a series of substrate treatments including a substrate treatment using the first chemical solution and the cleaning tool, a substrate treatment using the second chemical solution, a rinsing treatment and / or a drying treatment is suitable. Can be implemented.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view illustrating a configuration of a hollow rotary motor and a substrate holding member of a lower substrate processing unit.
FIG. 3 is a longitudinal sectional view of an essential part showing a configuration of a hollow rotary motor and a substrate holding member of a lower substrate processing unit.
FIG. 4 is a longitudinal sectional view showing a configuration of a substrate holding mechanism of an upper substrate processing unit.
FIG. 5 is a cross-sectional view illustrating a configuration of a substrate holding mechanism of an upper substrate processing unit.
FIG. 6 is a longitudinal sectional view showing a configuration of an atmosphere blocking member.
FIG. 7 is a plan view showing configurations of an intermediate cup and an atmosphere blocking member.
FIG. 8 is a longitudinal sectional view showing a state in which a lower loading / unloading port is formed.
FIG. 9 is a longitudinal sectional view showing delivery of a substrate between each substrate processing unit.
FIG. 10 is a longitudinal sectional view showing a state where a drying process is performed in an upper substrate processing unit.
FIG. 11 is a longitudinal sectional view showing a state in which an upper loading / unloading port is formed.
[Explanation of symbols]
1: Substrate processing unit
3d, 3u: enclosure
4: Substrate delivery opening
5: Atmosphere blocking member
6: Board delivery mechanism
20: Substrate holding member
30: Hollow rotary motor
40: Lower cup lifting mechanism
50: Substrate holding mechanism
70: Substrate rotation mechanism
92: Upper cup lifting mechanism
102, 112: Motor
107: Atmosphere blocking member lifting mechanism
W: Substrate

Claims (5)

基板を保持する基板保持手段と、前記基板保持手段に保持された基板を回転させる基板回転手段と、前記基板保持手段に保持された基板の周囲に配置される囲いとを個々に有する基板処理部をｎ個（ｎは２以上の自然数）備え、
これら基板処理部を鉛直方向に積層し、
下からｉ段目（ｉは、１〜（ｎ−１）の自然数）の基板処理部の囲いの上方と、下から（ｉ＋１）段目の基板処理部の囲いの下方とには、前記下からｉ段目の基板処理部と前記下から（ｉ＋１）段目の基板処理部との間で基板を受け渡すための基板受渡し開口が形成され、かつ、
前記各基板受渡し開口に位置して、その上下の基板処理部の雰囲気を遮断する（ｎ−１）個の雰囲気遮断部材と、
前記各雰囲気遮断部材を、対応する前記基板受渡し開口と、その基板受渡し開口から外れた退避位置との間で個別に変位させる（ｎ−１）個の変位手段と、
前記各雰囲気遮断部材を回転させる（ｎ−１）個の雰囲気遮断部材回転手段と、
前記各基板受渡し開口を介して、その上下の基板処理部の間で基板を受け渡す（ｎ−１）個の基板受渡し手段と、
最下段の基板処理部に対する基板の搬入または搬出の際には、基板を搬入出するための下方搬入出口を最下段の基板処理部の囲いに形成し、最下段の基板処理部で基板処理を行う際には、前記下方搬入出口を遮断する下方搬入出口形成／遮断手段と、
最上段の基板処理部に対する基板の搬出または搬入の際には、基板を搬入出するための上方搬入出口を最上段の基板処理部の囲いに形成し、最上段の基板処理部で基板処理を行う際には、前記上方搬入出口を遮断する上方搬入出口形成／遮断手段と、
を備えたことを特徴とする基板処理装置。A substrate processing unit that individually includes a substrate holding unit that holds the substrate, a substrate rotating unit that rotates the substrate held by the substrate holding unit, and an enclosure disposed around the substrate held by the substrate holding unit. N (n is a natural number of 2 or more)
Laminate these substrate processing parts in the vertical direction,
The lower part of the enclosure of the substrate processing unit of the i-th stage (i is a natural number of 1 to (n-1)) from the bottom and the lower part of the enclosure of the substrate processing part of the (i + 1) -th stage from the bottom A substrate transfer opening for transferring a substrate between the i-th substrate processing unit from the bottom and the (i + 1) -th substrate processing unit from the bottom, and
(N-1) atmosphere blocking members positioned at each of the substrate transfer openings to block the atmosphere of the upper and lower substrate processing units;
(N-1) displacing means for individually displacing each atmosphere blocking member between the corresponding substrate transfer opening and a retracted position removed from the substrate transfer opening;
(N-1) atmosphere blocking member rotating means for rotating each atmosphere blocking member;
(N-1) substrate delivery means for delivering a substrate between the upper and lower substrate processing units through each substrate delivery opening;
When loading / unloading a substrate to / from the lowermost substrate processing unit, a lower loading / unloading port for loading / unloading the substrate is formed in the enclosure of the lowermost substrate processing unit, and substrate processing is performed in the lowermost substrate processing unit When performing, a lower loading / unloading port forming / blocking means for blocking the lower loading / unloading port;
When unloading or loading a substrate to or from the uppermost substrate processing unit, an upper loading / unloading port for loading or unloading the substrate is formed in the enclosure of the uppermost substrate processing unit, and the uppermost substrate processing unit performs substrate processing. When performing, an upper loading / unloading port forming / blocking means for blocking the upper loading / unloading port;
A substrate processing apparatus comprising: 請求項１に記載の基板処理装置において、
前記各雰囲気遮断部材からその下方の基板処理部内に向けて気体を供給する気体供給手段を前記各雰囲気遮断部材に備えるとともに、最上段の基板処理部内に気体を導入する気体導入手段を前記最上段の基板処理部に設け、かつ、各基板処理部内の気体を排出する排気手段を各基板処理部ごとに設けたことを特徴とする基板処理装置。The substrate processing apparatus according to claim 1,
Each atmosphere blocking member includes a gas supply unit that supplies gas from each atmosphere blocking member toward the substrate processing unit below the gas processing unit, and a gas introduction unit that introduces gas into the uppermost substrate processing unit. A substrate processing apparatus characterized in that an exhaust means for exhausting gas in each substrate processing unit is provided for each substrate processing unit. 請求項１または２に記載の基板処理装置において、
前記複数個の基板処理部の中の少なくとも一つの基板処理部の基板回転手段を、
上下に開口した中空部を有する回転子と、前記回転子と同芯状に設けられ、上下に開口した中空部を有するステータとを備えた中空回転モーターで構成し、
前記中空回転モーターを備えた基板処理部の基板保持手段は、
基板の外周部を３箇所以上で保持する３個以上の基板保持部材を、前記中空回転モーターの回転子に連結して構成したことを特徴とする基板処理装置。The substrate processing apparatus according to claim 1 or 2,
A substrate rotating means of at least one substrate processing unit among the plurality of substrate processing units;
A rotor having a hollow portion opened up and down, and a hollow rotary motor provided concentrically with the rotor and having a stator having a hollow portion opened up and down,
The substrate holding means of the substrate processing unit provided with the hollow rotary motor is
3. A substrate processing apparatus comprising: three or more substrate holding members that hold the outer peripheral portion of a substrate at three or more locations connected to a rotor of the hollow rotary motor. 請求項１ないし３のいずれかに記載の基板処理装置において、
各基板処理部で行われる一連の基板処理は、最下段の基板処理部に基板を搬入し、最下段の基板処理部における基板処理から始めて、下の基板処理部から上の基板処理部へと順に各基板処理部における基板処理を行っていき、最上段の基板処理部における基板処理が終了すると、最上段の基板処理部から基板を搬出するように構成したことを特徴とする基板処理装置。The substrate processing apparatus according to any one of claims 1 to 3,
A series of substrate processing performed in each substrate processing unit carries a substrate into the lowermost substrate processing unit, starts with substrate processing in the lowermost substrate processing unit, and moves from the lower substrate processing unit to the upper substrate processing unit. A substrate processing apparatus configured to sequentially perform substrate processing in each substrate processing unit and to carry out the substrate from the uppermost substrate processing unit when the substrate processing in the uppermost substrate processing unit is completed. 請求項４に記載の基板処理装置において、
基板処理部は２個備えており、
下段の基板処理部で行う第１の基板処理は、第１の薬液と洗浄具とを用いた基板処理であり、
上段の基板処理部で行う第２の基板処理は、第２の薬液を用いた基板処理と、リンス処理および／または乾燥処理であることを特徴とする基板処理装置。The substrate processing apparatus according to claim 4,
There are two substrate processing units,
The first substrate processing performed in the lower substrate processing unit is substrate processing using the first chemical solution and the cleaning tool,
The substrate processing apparatus characterized in that the second substrate processing performed in the upper substrate processing section is substrate processing using a second chemical solution, rinsing processing and / or drying processing.

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