JP3767750B2 - ボンディング装置 - Google Patents
ボンディング装置 Download PDFInfo
- Publication number
- JP3767750B2 JP3767750B2 JP2003319469A JP2003319469A JP3767750B2 JP 3767750 B2 JP3767750 B2 JP 3767750B2 JP 2003319469 A JP2003319469 A JP 2003319469A JP 2003319469 A JP2003319469 A JP 2003319469A JP 3767750 B2 JP3767750 B2 JP 3767750B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- gas supply
- inert gas
- head
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011261 inert gas Substances 0.000 claims description 65
- 239000007789 gas Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78743—Suction holding means
- H01L2224/78744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
前記ボンディングステージは、前記ヒータプレートの外周近傍に設けられた第1の不活性ガス供給口と第2の不活性ガス供給口とを備えたガス供給ノズルとを有し、前記第1の不活性ガス供給口は前記半導体部品の中心方向へ向かって上方に斜度θ1の関係で多数配置されて前記チャンバーとの間にガス空間を形成し、前記第2の不活性ガス供給口は、前記ガス供給ノズル上面から外周方向に斜度θ2の関係を有して多数配置されて前記ボンディングステージ周囲から前記チャンバー内に形成されたガス空間への外気の侵入を防止して、前記ボンディングステージ、前記チャンバー及び前記ヘッドカバーで形成された空間内に不活性ガス空間を形成するようにしたものである。
10 不活性ガス
11 チャンバー上面カバー
11a ボンディングヘッド移動用切欠き
12 上面カバー用ヒンジ部
2 ボンディングヘッド
20 ボンディングヘッドカバー移動空間
21 ヘッドカバー
21a ボンディングヘッド下降用切欠き
21b 認識カメラ用切欠き
23 ガス供給ノズル
23a 不活性ガス供給口
24 クランパ
25 キャピラリ
26 ワイヤ
26a ボール
28 バンプ
3 ボンディングステージ
30 ボンディングステージ移動空間
31 ボンディングステージ移動用レール
33 ガス供給ノズル
33a 不活性ガス供給口
33b 不活性ガス供給口
4 ヒータプレート
5 ウエハ
7 認識用カメラ
9 ボンディング装置
9a ボンディング装置フレーム
Claims (6)
- 直交2方向に移動可能で所定の位置に位置決め制御可能、かつ、半導体部品を載置・加熱するヒータプレートを有するボンディングステージと、
ボンディングヘッド移動用切欠きが形成されたチャンバー上面カバーを有するチャンバーと、
前記ボンディングヘッド移動用切欠きを介して前記ボンディングステージの移動平面と平行な直交2方向及びその直角方向の3方向に移動可能な位置決め制御手段を有して前記半導体部品にボンディングを行なうボンディングヘッドと、
前記チャンバーの上方に配置され、前記ボンディングヘッドと一体に移動可能なヘッドカバーとを有するボンディング装置であって、
前記ヘッドカバーは、周縁部に不活性ガス供給口を備えたガス供給ノズルを配し、該不活性ガス供給口を介して不活性ガスを供給して、前記ボンディングステージ、前記チャンバー及び前記ヘッドカバーで形成された空間内に不活性ガス空間を形成することを特徴とするボンディング装置。 - 前記不活性ガス供給口は、前記チャンバー上面カバーに向けて下方向に設けられていることを特徴とする請求項1に記載のボンディング装置。
- 直交2方向に移動可能で所定の位置に位置決め制御可能、かつ、半導体部品を載置・加熱するヒータプレートを有するボンディングステージと、
ボンディングヘッド移動用切欠きが形成されたチャンバー上面カバーを有するチャンバーと、
前記ボンディングヘッド移動用切欠きを介して前記ボンディングステージの移動平面と平行な直交2方向及びその直角方向の3方向に移動可能な位置決め制御手段を有して前記半導体部品にボンディングを行なうボンディングヘッドと、
前記チャンバーの上方に配置され、前記ボンディングヘッドと一体に移動可能なヘッドカバーとを有するボンディング装置であって、
前記ボンディングステージは、前記ヒータプレートの外周近傍に設けられた第1の不活性ガス供給口と第2の不活性ガス供給口とを備えたガス供給ノズルとを有し、
前記第1の不活性ガス供給口は前記半導体部品の中心方向へ向かって上方に斜度θ1の関係で多数配置されて前記チャンバーとの間にガス空間を形成し、前記第2の不活性ガス供給口は、前記ガス供給ノズル上面から外周方向に斜度θ2の関係を有して多数配置されて前記ボンディングステージ周囲から前記チャンバー内に形成されたガス空間への外気の侵入を防止して、前記ボンディングステージ、前記チャンバー及び前記ヘッドカバーで形成された空間内に不活性ガス空間を形成することを特徴とするボンディング装置。 - 前記ヘッドカバーは、チャンバー上面カバーに向けて下方向に設けられている不活性ガス供給口を備えたガス供給ノズルを周縁部に配することを特徴とする請求項3記載のボンディング装置。
- 前記ボンディングステージが有する不活性ガス供給口、前記ヘッドカバーに搭載されたガス供給ノズルへの不活性ガスの供給経路の何れか、若しくはそれぞれに流量調整弁を設けて独立に流量調整可能としたことを特徴とする請求項1乃至請求項4記載のうち、少なくとも1に記載のボンディング装置。
- 前記ヘッドカバーに搭載されたガス供給ノズルに設けられた流量調整弁により不活性ガスの流速を調整することにより、ボンディング実行時ボンディングヘッドのキャピラリ先端に形成されるボールの安定を図ることを特徴とする請求項5記載のボンディング装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003319469A JP3767750B2 (ja) | 2003-09-11 | 2003-09-11 | ボンディング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003319469A JP3767750B2 (ja) | 2003-09-11 | 2003-09-11 | ボンディング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005086142A JP2005086142A (ja) | 2005-03-31 |
JP3767750B2 true JP3767750B2 (ja) | 2006-04-19 |
Family
ID=34418403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003319469A Expired - Lifetime JP3767750B2 (ja) | 2003-09-11 | 2003-09-11 | ボンディング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3767750B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206365B (zh) * | 2015-05-26 | 2019-04-30 | 先进科技新加坡有限公司 | 具有惰性气体环境的模片键合装置 |
KR102233338B1 (ko) * | 2020-10-12 | 2021-03-29 | 주식회사 저스템 | 플립칩 본딩 산화 방지 장치 |
-
2003
- 2003-09-11 JP JP2003319469A patent/JP3767750B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2005086142A (ja) | 2005-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4817341B2 (ja) | ワイヤボンディング装置 | |
KR100349727B1 (ko) | 집적회로 본딩패드로의 와이어 스티치 본딩방법 및 장치 | |
US7644852B2 (en) | Bonding apparatus, ball forming device in said bonding apparatus, and ball forming method using said bonding apparatus | |
US10022821B2 (en) | Bonding method and bonding device | |
US20120088362A1 (en) | Thermal Compressive Bond Head | |
KR20080095249A (ko) | 워크 클램프 및 와이어 본딩 장치 | |
WO2008066335A1 (en) | Apparatus of transferring semiconductor package | |
JP3767750B2 (ja) | ボンディング装置 | |
KR100643908B1 (ko) | 진공 솔더볼 흡착장치 및 이를 이용해 솔더볼을 기판 상에융착시키기 위한 방법 | |
JP2001257238A (ja) | チップ実装方法および装置 | |
JP4294165B2 (ja) | 電子部品搭載装置 | |
JP2009105114A (ja) | ワイヤボンディング装置及びボール形成方法 | |
KR20200094286A (ko) | 레이저를 포함하는 반도체 칩 본딩용 픽업장치 및 이를 이용한 본딩방법 | |
JP3845322B2 (ja) | ボイスコイルモータによる加重方法とそれによる部品実装装置、それらに用いるボイスコイルモータ | |
JP2005142460A (ja) | ボンディング装置及びボンディング方法 | |
JPH10303241A (ja) | ワイヤボンダー | |
JP3714118B2 (ja) | 電子部品の熱圧着装置 | |
WO2023188066A1 (ja) | 電子部品実装装置及び電子部品実装方法 | |
JPH08139140A (ja) | ワイヤボンディング方法とその装置 | |
CN216450612U (zh) | 一种固晶设备 | |
CN220290779U (zh) | 一种中转台、校准装置及固晶机 | |
JP6375073B1 (ja) | 半導体実装装置 | |
US7303109B2 (en) | Stud bumping apparatus | |
US20080073408A1 (en) | Movable electronic flame-off device for a bonding apparatus | |
JPH0878418A (ja) | バンプ形成装置およびバンプ形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050915 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060125 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 3767750 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100210 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110210 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110210 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120210 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130210 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130210 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140210 Year of fee payment: 8 |
|
EXPY | Cancellation because of completion of term |