JP3767512B2 - Wire bonding method - Google Patents

Wire bonding method Download PDF

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Publication number
JP3767512B2
JP3767512B2 JP2002124342A JP2002124342A JP3767512B2 JP 3767512 B2 JP3767512 B2 JP 3767512B2 JP 2002124342 A JP2002124342 A JP 2002124342A JP 2002124342 A JP2002124342 A JP 2002124342A JP 3767512 B2 JP3767512 B2 JP 3767512B2
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Japan
Prior art keywords
wire
bonding
bonded
tail portion
bonding surface
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Expired - Fee Related
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JP2002124342A
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Japanese (ja)
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JP2003318216A (en
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健史 渡辺
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Denso Corp
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Denso Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は、アルミニウムからなるワイヤを被ボンディング部材にボンディングするワイヤボンディング方法に関する。
【０００２】
【従来の技術】
近年のＩＧＢＴ、ＤＭＯＳの使用の拡大に伴い、シリコン素子のコストダウンを図るため、従来デッドスペースであったボンディングパッドを廃止し、トランジスタ上のＡｌ膜に直接ボンディングを行うようになってきている。このようなボンディングは、シリコン素子におけるセル構造を有するアクティブ部に直接ボンディングすることから、セル上ボンディングと呼ばれている。
【０００３】
被ボンディング部材としてのシリコンチップのアクティブ部に、アルミニウム（Ａｌ）の太線をワイヤボンディングした例を図３、図４に示す。図４は図３中の丸で囲んだＡ部の拡大断面図である。
【０００４】
図３に示すように、シリコンチップ２００が基板２１０上に搭載されている。このシリコンチップ２００のアクティブ部上に、例えばφ１００μｍ以上のＡｌ太線からなるワイヤ３０が第１ボンディングされ、基板２１０上のパッド２２０に第２ボンディングされている。
【０００５】
図４に示すように、アクティブ部は、例えば、ゲート電極２０１、ソース電極２０２およびドレイン電極２０３等を備えたトランジスタ素子が１個のセルとして複数個配列されたセル構造を有している。なお、基板２１０の上にはドレイン配線２０３ａが形成されている。また、Ａｌ膜からなるソース電極２０２の下にはゲート電極２０１との絶縁を確保するための層間絶縁膜２０４が介在しており、この層間絶縁膜２０４は平坦ではなく、凹凸を持って存在している。
【０００６】
そして、ワイヤ３０の第１ボンディングは、このセル構造をなすアクティブ部におけるソース電極２０２としてのＡｌ膜をボンディング面として行われている。
【０００７】
【発明が解決しようとする課題】
ところで、上記したセルへに対してＡｌ太線をワイヤボンディングする場合、セルへのダメージは超音波エネルギー（つまり、ボンディングツールの振幅量）が小さければ発生しない。
【０００８】
しかし、セル上ボンディングでは、Ａｌ太線を上記したような凹凸を持ったＡｌ膜上に接合しなければならないため、平面状のＡｌ膜に対するボンディングよりも大きな超音波エネルギーが必要である。
【０００９】
上記図４に示したように、Ａｌ膜としてのソース電極２０２下の層間絶縁膜２０４が凹凸形状となっているため、第１ボンディング時におけるワイヤ３０の振動で層間絶縁膜２０４の角部に応力がかかり、層間絶縁膜２０４が破壊することで、リーク不良が発生する。
【００１０】
本発明者の検討によれば、このようなワイヤ振動によるボンディング面の損傷は、次のようなメカニズムで主として発生することがわかった。図５は、第１ボンディングにおけるワイヤ振動の状態を示す図である。
【００１１】
第２ボンディング後にカットされたワイヤ３０は、ボンディングツール１００とともに、ボンディング装置のワイヤガイド１１０によってボンディング面１０に載せられる。そして、ツール１００によりボンディング面１０にワイヤ３０を押し付け、超音波振動を与えて第１ボンディングを行う。
【００１２】
このとき、ツール１００の直下のワイヤ３０は、押し潰されてボンディング面１０と接合されるが、ツール１００から外れたワイヤ３０の先端部（テール部）３１は延びる。ワイヤ３０の接合部では、つぶれたワイヤ３０が広い面積でボンディング面１０に固定されているため、ツール１００が振動しても局部的に応力がかからず、ボンディング面の損傷は少ない。
【００１３】
しかし、ワイヤ３０のテール部３１は、ボンディング面１０と接した状態で延び、そのときにテール部３１がボンディング面１０を擦る。すると、例えば、上記図４に示したようなセル構造では、ソース電極２０２がその下の層間絶縁膜２０４上をスリップして、層間絶縁膜２０４にダメージを与える。それにより、上記したリーク不良等が発生するのである。
【００１４】
そこで、本発明は上記問題に鑑み、アルミニウムからなるワイヤを被ボンディング部材にボンディングするワイヤボンディング方法において、第１ボンディングの際に発生するワイヤテール部のボンディング面への擦りによるボンディング面の損傷を抑制することを目的とする。
【００１５】
【課題を解決するための手段】
上記目的を達成するため、請求項１に記載の発明では、アルミニウムからなるワイヤ（３０）を被ボンディング部材にボンディングするワイヤボンディング方法において、被ボンディング部材の第１ボンディング面（１０）よりもアルミニウムとの接合性が劣るものからなり、一面（２１）上に当該一面より突出する突起部（２３）を有する低接合性部材（２０）を用意し、第１ボンディングの前に、ワイヤのうちテール部（３１）が突起部に接触するように、ワイヤを低接合性部材の一面上に押しつけることにより、ワイヤにおいてテール部が上方に曲がった形状を形成することを特徴とする。
【００１６】
それによれば、第１ボンディングの前に、ワイヤにおいてテール部が上方に曲がった形状となるため、続いて、第１ボンディングを行うにあたり、ワイヤを被ボンディング部材の第１ボンディング面に押し付けた際には、ボンディング面にはテール部は接しない。
【００１７】
そのため、この状態で超音波振動を与えて第１ボンディングを行っても、ワイヤテール部のボンディング面への擦りが生じないことから、ボンディング面の損傷を抑制することができる。
【００１８】
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【００１９】
【発明の実施の形態】
以下、本発明を図に示す実施形態について説明する。図１（ａ）〜（ｃ）は、本発明の実施形態に係るワイヤボンディング方法を工程順に示す工程図である。本ワイヤボンディング方法は、ワイヤとしてＡｌ線を用いたものであり、限定するものではないが、上記図３、図４に示したようなセル上ボンディングに適用可能である。
【００２０】
図１において、第１ボンディング面１０は、例えば基板に搭載されたシリコンチップのアクティブ部におけるＡｌ膜（上記図４参照）であり、図示しないが、第２ボンディング面は、例えば基板上のパッドである。次に、本実施形態のワイヤボンディング方法について述べる。
【００２１】
まず、図１（ａ）に示すように、被ボンディング部材のボンディング面、ここでは第１ボンディング面１０よりもＡｌとの接合性が劣るものからなる低接合性部材２０を用意する。この低接合性部材２０はＡｌワイヤ３０との接合が困難な材料、例えばセラミック、樹脂、Ｆｅ、Ｍｏ、Ｗ等の金属等といった材料から形成されたものである。
【００２２】
また、低接合性部材２０は、その一面２１上に平坦部２２およびこの平坦部２２より突出する突起部２３を有する。このような低接合性部材２０は、ボンディング時に被ボンディング部材を搭載支持する基板、各種ケース、治具等を用いることができる。
【００２３】
また、図１に示されるボンディングツール１００およびワイヤガイド１１０は、ワイヤボンディング装置に備えられたもので、これら両者１００、１１０は一体に移動するようになっている。
【００２４】
ボンディングツール１００は、ワイヤ３０の一部が入り込むことのできるツール溝を有し、この溝部分にてワイヤ３０を押し付けてワイヤ３０に超音波振動を与え、ワイヤ３０を接合するものである。
【００２５】
ワイヤガイド１１０は、筒状部材の中にワイヤ３０が挿入され、ワイヤ３０を支持しつつ移動させるものである。ワイヤガイド１１０に挿入されたワイヤ３０は、ワイヤガイド１１０に固定されているのではなく、ワイヤガイド１１０内を摺動可能になっている。
【００２６】
そして、第１ボンディングを行う前に、図１（ａ）に示すように、ボンディングツール１００によって、ワイヤ３０を低接合性部材２０の一面２１上に下降させていく。
【００２７】
次に、図１（ｂ）に示すように、ボンディングツール１００によって超音波パワーは印加せずに荷重（図中の白抜き矢印にて図示）だけをワイヤ３０に加えることにより、ワイヤ３０のうちテール部３１が突起部２３に接触するように、ワイヤ３０を低接合性部材２０の一面２１上に押しつける。
【００２８】
これによって、本例では、ワイヤ３０のうちテール部３１が突起部２３に接触し、ワイヤ３０のうち突起部２３との接触部からヒール部３２までの間の部分が平坦部２２に接触する。それにより、ワイヤ３０においてテール部３１が上方に曲がった形状が形成される。
【００２９】
続いて、ボンディングツール１００およびワイヤガイド１１０とともにワイヤ３０を、低接合性部材２０から引き上げ、図１（ｃ）に示すように、第１ボンディングを行う。
【００３０】
ボンディングツール１００によって、ワイヤ３０を第１ボンディング面１０に押し付け、超音波パワーおよび荷重を加えることで、第１ボンディング面１０とワイヤ３０とを接合する。このとき、ワイヤ３０においてテール部３１が上方に曲がった形状となっている。
【００３１】
そのため、ワイヤ３０を第１ボンディング面１０に押し付けた際には、第１ボンディング面１０にはテール部３１は接しない。そのため、この状態で超音波振動を与えて第１ボンディングを行っても、テール部３１のボンディング面１０への擦りが生じないことから、ボンディング面１０の損傷を抑制することができる。
【００３２】
そして、第１ボンディングを行った後、第１ボンディング部からワイヤ３０を繰り出して第２ボンディング面まで引き回し、第２ボンディングを行う。以上の一連の動作が本実施形態のワイヤボンディング方法である。
【００３３】
ここで、本ワイヤボンディング方法において、ワイヤ３０を低接合性部材２０の一面２１上に押しつけるとき、テール部３１が短すぎて突起部２３に接触しないことが無いように、テール部３１の長さをある程度長くしたり、または、突起部２３の位置を調節して設けることが必要である。
【００３４】
また、ワイヤ３０は低接合性部材２０の一面２１に接触した後、この接触部にて第１ボンディングが行われるため、低接合性部材２０の一面２１における平坦部２２は、ワイヤ３０の接触面を汚さないように清浄であり且つ平坦性を確保したものとし、第１ボンディングの接合性が劣化しないようにすることが必要である。
【００３５】
図２は、本実施形態の変形例を示す図である。本変形例では、低接合性部材２０の一面２１において、ワイヤ３０のテール部３１、ヒール部３２に対応して突起部２３を２個設けたものである。
【００３６】
この場合、ワイヤ３０を低接合性部材２０の一面２１上に押しつけると、テール部３１が上方に曲がるとともに、ヒール部３２も若干上方に曲がる。すると、ワイヤ３０におけるテール部３１とヒール部３２との間が、やや下方に湾曲した形状となる。
【００３７】
そのようなワイヤ３０の湾曲形状によれば、ボンディングツール１００のツール溝へのワイヤ３０の入り込みは、テール部３１側とヒール部３２側とでしっかりと確保される。そのため、ワイヤ３０がツール溝から外れることをより効果的に防止できる。
【００３８】
以上、本実施形態によれば、第１ボンディングの際にテール部３１のボンディング面１０への擦りが生じないことから、ボンディング面１０の損傷を抑制することができるため、本ワイヤボンディング方法は、ボンディング面が弱く損傷を受けやすいセル上ボンディングに好適に用いることができる。
【００３９】
なお、低接合性部材２０は、被ボンディング部材とは別体の部材でなくとも良く、可能ならば、被ボンディング部材におけるボンディング面以外の面であっても良い。
【図面の簡単な説明】
【図１】本発明の実施形態に係るワイヤボンディング方法を示す工程図である。
【図２】上記実施形態の変形例を示す図である。
【図３】シリコンチップのアクティブ部にアルミニウム太線をワイヤボンディングした例を示す図である。
【図４】図３中のＡ部拡大断面図である。
【図５】第１ボンディングにおけるワイヤ振動の状態を示す図である。
【符号の説明】
１０…第１ボンディング面、２０…低接合性部材、
２１…低接合性部材の一面、２３…突起部、３０…ワイヤ、３１…テール部。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wire bonding method for bonding a wire made of aluminum to a member to be bonded.
[0002]
[Prior art]
With the recent expansion of the use of IGBTs and DMOSs, in order to reduce the cost of silicon elements, bonding pads, which have conventionally been a dead space, are abolished, and bonding is directly performed on Al films on transistors. Such bonding is called on-cell bonding because it is directly bonded to an active portion having a cell structure in a silicon element.
[0003]
FIGS. 3 and 4 show an example in which a thick wire of aluminum (Al) is wire-bonded to an active portion of a silicon chip as a member to be bonded. 4 is an enlarged cross-sectional view of a portion A surrounded by a circle in FIG.
[0004]
As shown in FIG. 3, the silicon chip 200 is mounted on the substrate 210. On the active portion of the silicon chip 200, for example, a wire 30 made of an Al thick wire having a diameter of 100 μm or more is first bonded, and is second bonded to a pad 220 on the substrate 210.
[0005]
As shown in FIG. 4, the active part has a cell structure in which, for example, a plurality of transistor elements each including a gate electrode 201, a source electrode 202, a drain electrode 203, and the like are arranged as one cell. A drain wiring 203 a is formed on the substrate 210. In addition, an interlayer insulating film 204 for ensuring insulation from the gate electrode 201 is interposed under the source electrode 202 made of an Al film. The interlayer insulating film 204 is not flat and has unevenness. ing.
[0006]
The first bonding of the wire 30 is performed using an Al film as the source electrode 202 in the active part having the cell structure as a bonding surface.
[0007]
[Problems to be solved by the invention]
By the way, when the Al thick wire is wire bonded to the above-described cell, damage to the cell does not occur if the ultrasonic energy (that is, the amplitude amount of the bonding tool) is small.
[0008]
However, in the on-cell bonding, the Al thick wire must be bonded onto the Al film having the above-described unevenness, and therefore, ultrasonic energy larger than that for bonding to the planar Al film is required.
[0009]
As shown in FIG. 4 above, since the interlayer insulating film 204 under the source electrode 202 as an Al film has a concavo-convex shape, stress is applied to the corners of the interlayer insulating film 204 due to the vibration of the wire 30 during the first bonding. As a result, the interlayer insulating film 204 is destroyed, and a leak failure occurs.
[0010]
According to the study by the present inventor, it has been found that damage to the bonding surface due to such wire vibration mainly occurs by the following mechanism. FIG. 5 is a diagram illustrating a state of wire vibration in the first bonding.
[0011]
The wire 30 cut after the second bonding is placed on the bonding surface 10 together with the bonding tool 100 by the wire guide 110 of the bonding apparatus. Then, the wire 30 is pressed against the bonding surface 10 by the tool 100, and ultrasonic bonding is applied to perform the first bonding.
[0012]
At this time, the wire 30 immediately below the tool 100 is crushed and joined to the bonding surface 10, but the tip portion (tail portion) 31 of the wire 30 removed from the tool 100 extends. Since the crushed wire 30 is fixed to the bonding surface 10 in a wide area at the bonding portion of the wire 30, no stress is locally applied even when the tool 100 vibrates, and the bonding surface is less damaged.
[0013]
However, the tail portion 31 of the wire 30 extends in contact with the bonding surface 10, and at that time, the tail portion 31 rubs the bonding surface 10. Then, for example, in the cell structure as shown in FIG. 4, the source electrode 202 slips on the underlying interlayer insulating film 204 and damages the interlayer insulating film 204. As a result, the above-described leakage failure or the like occurs.
[0014]
Therefore, in view of the above problems, the present invention suppresses damage to the bonding surface due to rubbing of the wire tail portion on the bonding surface, which occurs during the first bonding, in the wire bonding method for bonding a wire made of aluminum to a member to be bonded. The purpose is to do.
[0015]
[Means for Solving the Problems]
In order to achieve the above object, according to the first aspect of the present invention, in a wire bonding method for bonding a wire (30) made of aluminum to a member to be bonded, the aluminum is bonded to the first bonding surface (10) of the member to be bonded. The low bondability member (20) having a protrusion (23) protruding from the one surface (21) is prepared on the one surface (21), and the tail portion of the wire before the first bonding is prepared. By pressing the wire onto one surface of the low bondability member so that (31) contacts the protrusion, the wire has a shape in which the tail portion is bent upward.
[0016]
According to this, since the tail portion of the wire is bent upward before the first bonding, when the wire is pressed against the first bonding surface of the member to be bonded, the first bonding is subsequently performed. The tail part does not contact the bonding surface.
[0017]
Therefore, even when the first bonding is performed by applying ultrasonic vibration in this state, the wire tail portion is not rubbed against the bonding surface, and thus the bonding surface can be prevented from being damaged.
[0018]
In addition, the code | symbol in the bracket | parenthesis of each said means is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments shown in the drawings will be described below. 1A to 1C are process diagrams illustrating a wire bonding method according to an embodiment of the present invention in the order of processes. This wire bonding method uses Al wire as a wire, and is not limited, but can be applied to on-cell bonding as shown in FIGS.
[0020]
In FIG. 1, a first bonding surface 10 is, for example, an Al film (see FIG. 4) in an active portion of a silicon chip mounted on a substrate. Although not shown, the second bonding surface is, for example, a pad on the substrate. is there. Next, the wire bonding method of this embodiment will be described.
[0021]
First, as shown in FIG. 1A, a low-bonding member 20 made of a bonding surface of a member to be bonded, in this case, having a lower bonding property with Al than the first bonding surface 10 is prepared. The low bondability member 20 is formed of a material that is difficult to bond to the Al wire 30, for example, a material such as ceramic, resin, metal such as Fe, Mo, and W.
[0022]
Further, the low bondability member 20 has a flat portion 22 and a protruding portion 23 protruding from the flat portion 22 on one surface 21 thereof. Such a low bondability member 20 can be a substrate, various cases, a jig, or the like that mounts and supports a member to be bonded during bonding.
[0023]
Further, the bonding tool 100 and the wire guide 110 shown in FIG. 1 are provided in a wire bonding apparatus, and both of them move together.
[0024]
The bonding tool 100 has a tool groove into which a part of the wire 30 can enter, and presses the wire 30 in this groove portion to apply ultrasonic vibration to the wire 30 to join the wire 30.
[0025]
The wire guide 110 is one in which the wire 30 is inserted into a tubular member and moved while supporting the wire 30. The wire 30 inserted into the wire guide 110 is not fixed to the wire guide 110 but is slidable in the wire guide 110.
[0026]
Then, before performing the first bonding, the wire 30 is lowered onto the one surface 21 of the low bondability member 20 by the bonding tool 100 as shown in FIG.
[0027]
Next, as shown in FIG. 1 (b), the ultrasonic power is not applied by the bonding tool 100, and only a load (shown by a white arrow in the figure) is applied to the wire 30. The wire 30 is pressed onto the one surface 21 of the low bondability member 20 so that the tail portion 31 contacts the protrusion 23.
[0028]
Thus, in this example, the tail portion 31 of the wire 30 contacts the protrusion 23, and the portion of the wire 30 between the contact portion with the protrusion 23 and the heel portion 32 contacts the flat portion 22. Thereby, a shape in which the tail portion 31 is bent upward in the wire 30 is formed.
[0029]
Subsequently, the wire 30 is pulled up from the low bondability member 20 together with the bonding tool 100 and the wire guide 110, and the first bonding is performed as shown in FIG.
[0030]
The bonding tool 100 presses the wire 30 against the first bonding surface 10 and applies ultrasonic power and a load to join the first bonding surface 10 and the wire 30. At this time, the tail portion 31 of the wire 30 is bent upward.
[0031]
Therefore, when the wire 30 is pressed against the first bonding surface 10, the tail portion 31 does not contact the first bonding surface 10. For this reason, even if the first bonding is performed by applying ultrasonic vibration in this state, the tail surface 31 does not rub against the bonding surface 10, so that the bonding surface 10 can be prevented from being damaged.
[0032]
Then, after performing the first bonding, the wire 30 is drawn out from the first bonding portion and drawn to the second bonding surface to perform the second bonding. The series of operations described above is the wire bonding method of this embodiment.
[0033]
Here, in this wire bonding method, when the wire 30 is pressed onto the one surface 21 of the low bondability member 20, the length of the tail portion 31 is set so that the tail portion 31 is not too short and does not come into contact with the protruding portion 23. It is necessary to lengthen the length to some extent or to adjust the position of the protrusion 23.
[0034]
Further, after the wire 30 comes into contact with the one surface 21 of the low bondability member 20, the first bonding is performed at this contact portion. Therefore, the flat portion 22 on the one surface 21 of the low bondability member 20 is the contact surface of the wire 30. Therefore, it is necessary to ensure cleanness and flatness so as not to contaminate the first bonding so that the bonding property of the first bonding does not deteriorate.
[0035]
FIG. 2 is a diagram illustrating a modification of the present embodiment. In the present modification, two protrusions 23 are provided on one surface 21 of the low bondability member 20 corresponding to the tail portion 31 and the heel portion 32 of the wire 30.
[0036]
In this case, when the wire 30 is pressed onto the one surface 21 of the low bondability member 20, the tail portion 31 is bent upward and the heel portion 32 is also bent slightly upward. Then, the shape between the tail portion 31 and the heel portion 32 of the wire 30 is slightly curved downward.
[0037]
According to such a curved shape of the wire 30, the entry of the wire 30 into the tool groove of the bonding tool 100 is securely secured on the tail portion 31 side and the heel portion 32 side. Therefore, it can prevent more effectively that the wire 30 remove | deviates from a tool groove | channel.
[0038]
As described above, according to the present embodiment, since the rubbing to the bonding surface 10 of the tail portion 31 does not occur during the first bonding, the bonding surface 10 can be prevented from being damaged. It can be suitably used for on-cell bonding where the bonding surface is weak and easily damaged.
[0039]
The low bondability member 20 may not be a separate member from the member to be bonded, and may be a surface other than the bonding surface of the member to be bonded if possible.
[Brief description of the drawings]
FIG. 1 is a process diagram showing a wire bonding method according to an embodiment of the present invention.
FIG. 2 is a diagram showing a modification of the embodiment.
FIG. 3 is a view showing an example in which an aluminum thick wire is wire-bonded to an active portion of a silicon chip.
4 is an enlarged cross-sectional view of a part A in FIG.
FIG. 5 is a diagram showing a state of wire vibration in the first bonding.
[Explanation of symbols]
10 ... 1st bonding surface, 20 ... Low bondability member,
21: One surface of a low-bonding member, 23: Projection, 30 ... Wire, 31 ... Tail.

Claims (1)

アルミニウムからなるワイヤ（３０）を被ボンディング部材にボンディングするワイヤボンディング方法において、
前記被ボンディング部材の第１ボンディング面（１０）よりもアルミニウムとの接合性が劣るものからなり、一面（２１）上に当該一面より突出する突起部（２３）を有する低接合性部材（２０）を用意し、
第１ボンディングの前に、前記ワイヤのうちテール部（３１）が前記突起部に接触するように、前記ワイヤを前記低接合性部材の一面上に押しつけることにより、前記ワイヤにおいて前記テール部が上方に曲がった形状を形成することを特徴とするワイヤボンディング方法。In a wire bonding method for bonding a wire (30) made of aluminum to a member to be bonded,
The low bonding property member (20) having a bonding property with aluminum lower than that of the first bonding surface (10) of the member to be bonded, and having a protrusion (23) protruding from the one surface on the one surface (21). Prepare
Before the first bonding, the wire is pressed onto one surface of the low-bonding member so that the tail portion (31) of the wire comes into contact with the protrusion, so that the tail portion of the wire moves upward. A wire bonding method characterized by forming a bent shape.
JP2002124342A 2002-04-25 2002-04-25 Wire bonding method Expired - Fee Related JP3767512B2 (en)

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TWI570864B (en) * 2013-02-01 2017-02-11 英帆薩斯公司 Microelectronic package having wire bond vias, method of making and stiffening layer for same
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TWI543284B (en) 2014-02-10 2016-07-21 新川股份有限公司 Method for producing semiconductor apparatus and wire bonding apparatus
TWI517277B (en) 2014-02-14 2016-01-11 新川股份有限公司 Wire bonding device and manufacturing method of semiconductor device
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