JP3757066B2

JP3757066B2 - Thermal insulation for heat treatment equipment

Info

Publication number: JP3757066B2
Application number: JP31116098A
Authority: JP
Inventors: 貴浩田部井; 勝清野
Original assignee: 東芝セラミックス株式会社
Priority date: 1998-10-30
Filing date: 1998-10-30
Publication date: 2006-03-22
Anticipated expiration: 2018-10-30
Also published as: JP2000138175A

Description

【０００１】
【発明の属する技術分野】
本発明は熱処理装置用断熱部材に係わり、熱処理装置内での汚染がなく長寿命、安価であり、特に半導体ウェーハ熱処理装置用として適する熱処理装置用断熱部材に関する。
【０００２】
【従来の技術】
半導体装置の酸化、拡散等多数の熱処理工程には複数の半導体ウェーハを半導体ウェーハボートに搭載し、この半導体ウェーハボートを熱処理装置に収納し、加熱して熱処理を行っている。
【０００３】
例えば縦型熱処理炉を用いた熱処理にあっては、高温の縦型熱処理炉に収納される縦型半導体ウェーハボートは、縦型熱処理炉の熱が処理炉外に逃げるのを防ぐために処理炉開口部近傍に配置され、一部が室温の作業室に露出した半導体ウェーハ熱処理装置用断熱部材の上に載置されている。
【０００４】
従来の半導体ウェーハ熱処理装置用断熱部材は、特開平３−１１４２２３号公報に記載されているように、石英ガラス製の円筒形状のものを用いたり、あるいはこのような石英ガラス製の円筒形状のものにグラスウールを充填したものが用いられていた。しかし、このような石英ガラス製の半導体ウェーハ熱処理装置用断熱部材は半導体ウェーハを縦型半導体ウェーハボートの重量と処理炉から熱により変形することがあり、長期間の使用が困難であった。また、後者の円筒中にグラスウールを充填したものにあっては、グラスウールからの発塵により、処理炉内を汚染する虞があった。
【０００５】
また、特公平６−５６６６号公報に記載された半導体ウェーハ熱処理装置用断熱部材は、円板形状の薄板状体を偏倚した位置で４本の支柱に接合しており、その材質が石英ガラスあるいは炭化珪素であっても、より高温の熱処理条件では、遮蔽板に変形が生じることも起こり得る。
【０００６】
さらに、図５に示すような従来の反応焼結ＳｉＣ製の半導体ウェーハ熱処理装置用断熱部材３１は、使用中の熱的影響による変形や割れを回避するために、反応焼結ＳｉＣ製の複数枚の遮蔽板３２と、この遮蔽板３２が着脱自在にはめ込まれる溝部３３が形成された３本の支柱３４と、この支柱３４の一端部３５が接合される底板３６と、他端部３７が接合され縦型ウェーハボートが載置される天板３８とからなる構造になっている。
【０００７】
このような構造を有する従来の半導体ウェーハ熱処理装置用断熱部材３１は、遮蔽板３２を支柱３４から着脱する際に発塵が発生し、また、溝部３３形成のためのコストが嵩むなどの不都合があった。
【０００８】
【発明が解決しようとする課題】
そこで、熱処理炉の汚染および使用中の変形がなく、長寿命、安価で半導体ウェーハ熱処理装置用断熱部材に適する熱処理装置用断熱部材が要望されており、本発明は熱処理炉の汚染および使用中の変形がなく、長寿命、安価で半導体ウェーハ熱処理装置用断熱部材に適する熱処理装置用断熱部材を提供することを目的とする。
【０００９】
【課題を解決するための手段】
上記目的を達成するためになされた本願請求項１の発明は、炭化珪素質材料からなる複数本の支柱と、この支柱が接合状態で貫通する１個の貫通孔と支柱が遊挿する遊挿孔とが設けられた炭化珪素質材料からなる複数枚の薄板状体とを有し、前記貫通孔を介して薄板状体を前記支柱に１ケ所で接合することにより、前記薄板状体を前記支柱に間隔を設けて保持することを特徴とする熱処理装置用断熱部材であることを要旨としている。
【００１０】
本願請求項２の発明では、上記複数枚の隣接する薄板状体は各々異なる支柱に接合されていることを特徴とする請求項１に記載の熱処理装置用断熱部材であることを要旨としている。
【００１１】
本願請求項３の発明では、上記薄板状体の貫通孔は隣接する薄板状体の貫通孔とは１間隔変位して位置させ、複数枚の薄板状体と複数本の支柱の接合位置を順次変位させることを特徴とする請求項１または２に記載の熱処理装置用断熱部材であることを要旨としている。
【００１２】
本願請求項４の発明では、上記薄板状体の貫通孔および遊挿孔を薄板状体の中心点から等距離に位置させ、複数枚の薄板状体と複数本の支柱の接合位置を順次変位させることを特徴とする請求項１ないし３のいずれか１項に記載の熱処理装置用断熱部材であることを要旨としている。
【００１３】
本願請求項５の発明では、上記薄板状体は円板形状であり、上記貫通孔および遊挿孔を前記薄板状体の同心円上に等間隔で位置させ、複数枚の薄板状体と複数本の支柱の接合位置を順次変位させることを特徴とする請求項１または３に記載の熱処理装置用断熱部材であることを要旨としている。
【００１４】
本願請求項６の発明では、上記支柱の断面は円形形状であり、薄板状体に形成される遊挿孔は円形であって、この遊挿孔の直径が支柱の直径の２倍以下であることを特徴とする請求項４または５に記載の熱処理装置用断熱部材であることを要旨としている。
【００１５】
本願請求項７の発明では、上記遊挿孔の直径が支柱の直径の１．４倍以上であることを特徴とする請求項４ないし６のいずれか１項に記載の熱処理装置用断熱部材であることを要旨としている。
【００１６】
本願請求項８の発明では、上記３本以上の支柱は一端部で底板に立設され、他端部で縦型半導体ウェーハ熱処理装置用部材が載置される天板に固着されており、薄板状体は３枚以上である縦型半導体ウェーハ熱処理装置用断熱部材であることを特徴とする請求項１ないし７のいずれか１項に記載の熱処理装置用断熱部材であることを要旨としている。
【００１７】
【発明の実施の形態】
本発明に係わる熱処理装置用断熱部材の実施の形態について図面を参照して説明する。
【００１８】
図１に示すように、熱処理装置用断熱部材、例えば半導体ウェーハ熱処理装置用断熱部材（以下断熱部材という。）１は、炭化珪素質材料であるシリコン含浸炭化珪素（Ｓｉ−ＳｉＣ）からなる複数本例えば３本の支柱２ａ、２ｂ、２ｃと、この支柱２が接合状態で貫通する１個の貫通孔３ａと支柱２が遊挿する複数個例えば２個の遊挿孔４ａ1 、４ａ2 とが設けられ、炭化珪素質からなる複数枚例えば３枚の薄板状体５ａ、５ｂ、５ｃとを有している。さらに、この薄板状体５と同一外径を有し支柱２の下端部６に強固に接合されて立設された底板７と、この底板７と同一形状を有し、断熱部材１の使用時縦型半導体ウェーハボートが載置され、支柱２の上端部８に強固に接合された天板９とを有している。
【００１９】
半導体ウェーハが搭載された縦型半導体ウェーハボートの荷重は天板９、支柱２および底板７で受けられ、薄板状体５には一切かからない構造になっている。
【００２０】
上記断熱部材１には、ＣＶＤ−ＳｉＣ膜が全面に形成されている。
【００２１】
上記薄板状体５は円板形状であり、この薄板状体５には同心円上に間隔例えば等間隔（１２０°の中心角度）を有して１個の上記貫通孔３と複数個例えば２個の上記遊挿孔４が設けられている。
【００２２】
貫通孔３は円形形状で支柱２の直径Ｄよりも若干大きめの直径ｄ1 を有し、遊挿孔４は円形形状で支柱２の直径Ｄの２倍以下の直径ｄ2 を有し、断熱部材１にＣＶＤ−ＳｉＣ被膜を形成する場合には、遊挿孔４の直径ｄ2 を支柱２の直径Ｄの１．４倍以上になっている。
【００２３】
この遊挿孔４の直径ｄ2 を支柱２の直径Ｄの２倍以下にするのは、遮熱効果を良好に保つためであり、２倍を超えると遊挿孔４を介して熱リークが発生し遮熱効果が低下するためである。遊挿孔４の直径ｄ2 を支柱２の直径Ｄの１．４倍以上にするのは、遊挿孔４の側壁部にＣＶＤ−ＳｉＣ膜が十分形成され、基材の露出やＳｉＣ膜の剥離の発生を防ぐためである。
【００２４】
また、薄板状体５を支柱２に保持する構造は、薄板状体５に設けられた１個の貫通孔３を介して１枚の薄板状体５と１本の支柱２とを接合剤により１ケ所の接合位置１０ａで接合させるようになっており、さらに複数枚の隣接する薄板状体５は、各々異なる支柱２に１間隔（１２０°）ずつ順次変位した異なる接合位置１０ｂ、１０ｃで接合されるようになっている。
【００２５】
上述のような構造を有する断熱部材１は、図４に示すような工程流れにより製造される。なお、断熱部材１の各構成部品の成形体にも同一番号を付して説明する。
【００２６】
すなわち、原料のＳｉＣ粉末と炭素とバインダを混練する混練工程と、これらを造粒する造粒工程と、この造粒原料を成形し支柱成形体２、薄板状体成形体５、底板成形体７、天板成形体９を作る成形工程と、これらの成形体２、５、７、９を仮焼する工程と、仮焼された成形体２、底板成形体７、天板成形体９を整形し、薄板状体成形体５に貫通孔３および遊挿孔４を穿設する加工工程と、有機結合剤とＳｉＣ粉末よりなる接着剤を用いて、支柱２の下端部６に底板７を、上端部８に天板９を、貫通孔３を介して薄板状体５を支柱２にそれぞれ接合する接合工程と、この接着されて組立てられた断熱部材１にＳｉを含浸させる含浸工程と、このＳｉ含浸時、断熱部材１の表面に吹出したＳｉを研磨する研磨工程と、研磨され表面が平坦になった断熱部材１にＣＶＤ−ＳｉＣ膜を形成するＳｉＣ膜形成工程とにより製造される。
【００２７】
次に、本実施形態の半導体ウェーハ熱処理装置用断熱部材１の使用方法について説明する。
【００２８】
ヒータ２１を有する縦型熱処理炉２２の昇降装置２３に断熱部材１を載置する。しかる後、半導体ウェーハ２４が多数搭載された縦型ウェーハボート２５を天板９を介して断熱部材１に載置し、さらに縦型ウェーハボート２５と断熱部材１を石英ガラス製炉芯管２６で覆う。
【００２９】
次に、昇降装置２３を作動させて、石英ガラス製炉芯管２６に収納された縦型ウェーハボート２５と断熱部材１を縦型熱処理炉２２に装填する。
【００３０】
この状態で縦型ウェーハボート２５は縦型熱処理炉２２のほぼ中央部２７に収納され縦型熱処理炉２２の開口部２８は断熱部材１により閉塞される。しかる後、ヒータ２１を付勢して、半導体ウェーハ２４の熱処理を行う。
【００３１】
この熱処理工程において、縦型熱処理炉２２内は約１４００°以上の高温に保たれるが、複数枚の薄板状体５よりなる断熱部材１により効果的に遮熱が図られ縦型熱処理炉２２内は高温に保たれる。また、断熱部材１は炭化珪素質材料であり耐熱性に優れているので、高温中に長時間曝されても変形せず長時間の使用が可能である。また、薄板状体５の各接合位置１０をそれぞれ変位させることにより、断熱部材１の受ける熱歪みのバランスをとることができ、さらに、例えば各薄板状体５の遊挿孔４ａ1 、４ｂ1 、４ｃ1 は同一支柱２ａに沿って一直線上に並んでおらず、図２に示す点線のような高温ガス流れ（ｆ）に起因し１本の支柱２に沿う熱リークは、この貫通孔３ａ部分で遮熱されて、遊挿孔４を介して行われる熱リークは最小限に抑えられる。
【００３２】
さらに、遊挿孔の直径が支柱の直径の２倍以下であるので、熱リークは効果的に抑えられる。
【００３３】
また、断熱部材１の上部２９は高温に曝され、下部３０は室温と接するので、断熱部材１の支柱２および薄板状体５は熱膨脹するが、１枚の薄板状体５は、支柱２と薄板状体５との接合が１ケ所のみで行われており、支柱２および薄板状体５の熱膨脹分は遊嵌孔４で逃がされ、支柱２および薄板状体５間には熱応力が発生せず、支柱２、薄板状体５に割れ等を発生することもなく、長寿命である。
【００３４】
さらに、断熱部材１に断熱用グラスウールを用いておらず、薄板状体を支柱の溝部に着脱する構造でないので、溝部形成のためのコストを要さず、また、薄板状体の着脱時、発塵により縦型熱処理炉内を汚染することもなく、縦型熱処理炉２２内を清浄に保てる。
【００３５】
上記実施形態では、半導体ウェーハ熱処理装置用断熱部材について説明したが、本発明に係わる熱処理装置用断熱部材は、半導体ウェーハ熱処理装置用断熱部材に限定されるものではない。
【００３６】
また、熱処理装置用断熱部材は縦型のみならず横型も包含される。さらに、３本以上の支柱を有し、この支柱に接合された円形の底板、天板および薄板状体を有する縦型断熱部材について説明したが、本発明に係わる断熱部材は、熱処理炉の形状等に応じて、薄板状体は矩形でもよく、また、必ずしも断熱部材の表面にＣＶＤ−ＳｉＣ膜を形成する必要はない。また、基材を形成する炭化珪素質材料は反応焼結によるＳｉ−ＳｉＣに限らず、焼結助剤にＢ、Ｃ等を用いた自焼結ＳｉＣであってもよい。さらに、断熱部材は、横型で断熱部材に半導体ウェーハ熱処理装置用ボートなどの荷重がかからない場合には、支柱は２本であってもよい。
【００３７】
【発明の効果】
本発明に係わる熱処理装置用断熱部材によれば、熱処理炉の汚染および使用中の変形がなく、長寿命、安価で特に半導体ウェーハ熱処理装置用断熱部材に適する熱処理装置用断熱部材を提供することができる。また、複数枚の隣接する薄板状体の接合位置を変位させることにより、断熱部材の受ける熱歪みのバランスをとることができる。
【００３８】
さらに、１本の支柱は遊挿孔を遊挿し、必ず貫通孔も接合状態で貫通するので、熱リークは接合位置で遮熱されて、熱リークは最小限に抑えられる。遊挿孔の直径が支柱の直径の２倍以下であるので、熱リークは効果的に抑えられる。また、遊挿孔の直径を支柱の直径の１．４２倍以上にすれば、ＣＶＤ−ＳｉＣ膜の形成も完全に行える。
【００３９】
さらに、１枚の薄板状体は、支柱と薄板状体の接合が１ケ所で行われ、支柱および薄板状体の熱膨脹分は遊嵌孔で逃がされ、支柱および薄板状体間には熱応力が発生せず、支柱、薄板状体に割れ等を発生することもなく、長寿命である。
【図面の簡単な説明】
【図１】本発明の一実施形態の半導体ウェーハ熱処理装置用断熱部材の斜視図。
【図２】本発明の一実施形態の半導体ウェーハ熱処理装置用断熱部材の側面図。
【図３】本発明の一実施形態の半導体ウェーハ熱処理装置用断熱部材の使用状態を示す説明図。
【図４】本発明の一実施形態の半導体ウェーハ熱処理装置用断熱部材の製造工程流れ図。
【図５】従来の半導体ウェーハ熱処理装置用断熱部材の側面図。
【符号の説明】
１半導体ウェーハ熱処理装置用断熱部材
２支柱
３貫通孔
４遊挿孔
５薄板状体
６下端部
７底板
８上端部
９天板
１０接合位置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a heat insulating member for a heat treatment apparatus, and more particularly to a heat insulating member for a heat treatment apparatus that is free from contamination in the heat treatment apparatus, has a long life, is inexpensive, and is particularly suitable for a semiconductor wafer heat treatment apparatus.
[0002]
[Prior art]
In many heat treatment processes such as oxidation and diffusion of semiconductor devices, a plurality of semiconductor wafers are mounted on a semiconductor wafer boat, and this semiconductor wafer boat is housed in a heat treatment apparatus and heated to perform heat treatment.
[0003]
For example, in a heat treatment using a vertical heat treatment furnace, a vertical semiconductor wafer boat housed in a high-temperature vertical heat treatment furnace has a processing furnace opening to prevent the heat of the vertical heat treatment furnace from escaping outside the processing furnace. It is placed in the vicinity of the part, and a part thereof is placed on the heat insulating member for the semiconductor wafer heat treatment apparatus exposed to the working room at room temperature.
[0004]
As described in JP-A-3-114223, a conventional heat insulating member for a semiconductor wafer heat treatment apparatus uses a cylindrical shape made of quartz glass or such a cylindrical shape made of quartz glass. The one filled with glass wool was used. However, such a heat insulating member for a semiconductor wafer heat treatment apparatus made of quartz glass may be deformed due to heat from the weight of the vertical semiconductor wafer boat and the processing furnace, and is difficult to use for a long period of time. Further, in the case where the latter cylinder is filled with glass wool, the inside of the processing furnace may be contaminated by the generation of dust from the glass wool.
[0005]
In addition, the heat insulating member for a semiconductor wafer heat treatment apparatus described in Japanese Patent Publication No. 6-5666 is bonded to four columns at a position where a disk-shaped thin plate-like body is biased, and the material is made of quartz glass or Even with silicon carbide, the shielding plate may be deformed under higher temperature heat treatment conditions.
[0006]
Furthermore, the conventional heat insulating member 31 for a semiconductor wafer heat treatment apparatus made of reaction sintered SiC as shown in FIG. 5 has a plurality of pieces made of reaction sintered SiC in order to avoid deformation and cracking due to thermal influence during use. A shield plate 32, three support posts 34 in which grooves 33 into which the shield plate 32 is detachably fitted are formed, a bottom plate 36 to which one end 35 of the support post 34 is joined, and the other end 37 are joined. And a top plate 38 on which the vertical wafer boat is placed.
[0007]
The conventional heat insulating member 31 for a semiconductor wafer heat treatment apparatus having such a structure is disadvantageous in that dust is generated when the shielding plate 32 is attached to and detached from the column 34, and the cost for forming the groove 33 is increased. there were.
[0008]
[Problems to be solved by the invention]
Accordingly, there is a need for a heat treatment apparatus heat insulating member that is free from contamination and deformation during use of the heat treatment furnace, has a long service life, is inexpensive, and is suitable for a heat insulating member for a semiconductor wafer heat treatment apparatus. An object of the present invention is to provide a heat insulating member for a heat treatment apparatus that is not deformed, has a long life, is inexpensive and is suitable for a heat insulating member for a semiconductor wafer heat treatment apparatus.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the invention according to claim 1 of the present invention is a loose insertion in which a plurality of columns made of silicon carbide material, a single through hole through which the column penetrates in a joined state, and the column are loosely inserted. A plurality of thin plate-like bodies made of a silicon carbide material provided with holes, and joining the thin plate-like body to the support at one location via the through-holes, The gist of the present invention is that it is a heat insulating member for a heat treatment apparatus, characterized in that the support columns are held at intervals.
[0010]
The gist of the invention of claim 2 is the heat insulating member for a heat treatment apparatus according to claim 1, wherein the plurality of adjacent thin plate-like bodies are respectively joined to different struts.
[0011]
In the invention of claim 3 of the present application, the through-holes of the thin plate-like bodies are positioned so as to be displaced by one interval from the through-holes of the adjacent thin plate-like bodies, and the joining positions of the plurality of thin plate-like bodies and the plurality of support columns are sequentially arranged. The gist is the heat insulating member for a heat treatment apparatus according to claim 1, wherein the heat insulating member is displaced.
[0012]
In the invention of claim 4 of the present application, the through-hole and the loose insertion hole of the thin plate-like body are positioned equidistant from the center point of the thin plate-like body, and the joining positions of the plurality of thin plate-like bodies and the plurality of support columns are sequentially displaced. The gist of the present invention is the heat insulation member for a heat treatment apparatus according to any one of claims 1 to 3.
[0013]
In the invention of claim 5 of the present application, the thin plate-like body has a disk shape, and the through holes and the loose insertion holes are positioned at equal intervals on the concentric circle of the thin plate-like body, and a plurality of thin plate-like bodies and a plurality of thin plate-like bodies are provided. The gist of the present invention is the heat insulation member for a heat treatment apparatus according to claim 1, wherein the joining positions of the support columns are sequentially displaced.
[0014]
In the invention of claim 6 of the present application, the cross section of the column is circular, and the loose insertion hole formed in the thin plate-like body is circular, and the diameter of the loose insertion hole is not more than twice the diameter of the column. The gist of the present invention is the heat insulation member for a heat treatment apparatus according to claim 4 or 5.
[0015]
In the invention according to claim 7 of the present application, in the heat insulation device for heat treatment apparatus according to any one of claims 4 to 6, wherein the diameter of the loose insertion hole is 1.4 times or more of the diameter of the support column. There is a summary.
[0016]
In the invention of claim 8 of the present application, the three or more support columns are erected on the bottom plate at one end, and are fixed to the top plate on which the member for the vertical semiconductor wafer heat treatment apparatus is mounted at the other end. The gist is the heat insulating member for a heat treatment apparatus according to any one of claims 1 to 7, characterized in that the shape is a heat insulating member for a vertical semiconductor wafer heat treatment apparatus having three or more sheets.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of a heat insulating member for a heat treatment apparatus according to the present invention will be described with reference to the drawings.
[0018]
As shown in FIG. 1, a heat insulating member for a heat treatment apparatus, for example, a heat insulating member for a semiconductor wafer heat treatment apparatus (hereinafter referred to as a heat insulating member) 1 is a plurality of silicon impregnated silicon carbide (Si—SiC) which is a silicon carbide material. For example, three columns 2a, 2b, 2c, one through hole 3a through which the column 2 penetrates in a joined state, and a plurality of, for example, two loose holes 4a1, 4a2 through which the column 2 is loosely inserted are provided. In addition, a plurality of, for example, three thin plate-like bodies 5a, 5b, and 5c made of silicon carbide are provided. Further, the bottom plate 7 having the same outer diameter as the thin plate-like body 5 and firmly erected by being firmly joined to the lower end portion 6 of the column 2 has the same shape as the bottom plate 7, and the heat insulating member 1 is used. A vertical semiconductor wafer boat is mounted and has a top plate 9 that is firmly joined to the upper end portion 8 of the column 2.
[0019]
The load of the vertical semiconductor wafer boat on which the semiconductor wafer is mounted is received by the top plate 9, the support column 2, and the bottom plate 7, and is not applied to the thin plate member 5.
[0020]
A CVD-SiC film is formed on the entire surface of the heat insulating member 1.
[0021]
The thin plate-like body 5 has a disk shape, and the thin plate-like body 5 has one through-hole 3 and a plurality of, for example, two pieces, having concentric circles, for example, at equal intervals (center angle of 120 °). The above-mentioned loose insertion hole 4 is provided.
[0022]
The through hole 3 is circular and has a diameter d1 that is slightly larger than the diameter D of the support column 2, and the loose insertion hole 4 is circular and has a diameter d2 that is not more than twice the diameter D of the support column 2. When the CVD-SiC film is formed on the surface, the diameter d2 of the loose insertion hole 4 is 1.4 times the diameter D of the support column 2 or more.
[0023]
The reason why the diameter d2 of the loose insertion hole 4 is made not more than twice the diameter D of the support column 2 is to keep the heat shielding effect good, and if it exceeds twice, heat leakage will occur through the loose insertion hole 4. This is because the heat shielding effect is reduced. The reason why the diameter d2 of the loose insertion hole 4 is 1.4 times the diameter D of the support column 2 is that a CVD-SiC film is sufficiently formed on the side wall of the loose insertion hole 4 to expose the base material and peel the SiC film. This is to prevent the occurrence of the problem.
[0024]
Moreover, the structure which hold | maintains the thin plate-shaped body 5 to the support | pillar 2 is the one plate-shaped body 5 and the single support | pillar 2 with a bonding agent through one through-hole 3 provided in the thin plate-shaped body 5. Joining is performed at one joining position 10a, and a plurality of adjacent thin plate-like bodies 5 are joined at different joining positions 10b and 10c which are sequentially displaced by one interval (120 °) on different support columns 2, respectively. It has come to be.
[0025]
The heat insulating member 1 having the structure as described above is manufactured by a process flow as shown in FIG. In addition, the same number is attached | subjected and demonstrated to the molded object of each component of the heat insulation member 1. FIG.
[0026]
That is, a kneading step for kneading raw material SiC powder, carbon, and a binder, a granulating step for granulating them, and forming this granulated raw material to form a column molded body 2, a thin plate molded body 5, and a bottom plate molded body 7. , Forming step of top plate molded body 9, step of calcining these molded bodies 2, 5, 7, 9 and shaping calcined molded body 2, bottom plate molded body 7 and top plate molded body 9 The bottom plate 7 is attached to the lower end portion 6 of the support column 2 using a processing step of drilling the through-hole 3 and the loose insertion hole 4 in the thin plate-shaped body 5 and an adhesive made of an organic binder and SiC powder. A joining step of joining the top plate 9 to the upper end 8 and the thin plate-like body 5 to the support column 2 through the through-hole 3; an impregnation step of impregnating Si into the heat-insulating member 1 assembled by bonding; A polishing step for polishing Si blown to the surface of the heat insulating member 1 during the Si impregnation, and polishing to flatten the surface. And it is produced in the heat insulating member 1 by a SiC film forming step of forming a CVD-SiC film.
[0027]
Next, the usage method of the heat insulation member 1 for semiconductor wafer heat processing apparatuses of this embodiment is demonstrated.
[0028]
The heat insulating member 1 is placed on the lifting device 23 of the vertical heat treatment furnace 22 having the heater 21. Thereafter, a vertical wafer boat 25 loaded with a large number of semiconductor wafers 24 is placed on the heat insulating member 1 via the top plate 9, and the vertical wafer boat 25 and the heat insulating member 1 are further connected by a quartz glass furnace core tube 26. cover.
[0029]
Next, the elevating device 23 is operated, and the vertical wafer boat 25 and the heat insulating member 1 housed in the quartz glass furnace core tube 26 are loaded into the vertical heat treatment furnace 22.
[0030]
In this state, the vertical wafer boat 25 is accommodated in a substantially central portion 27 of the vertical heat treatment furnace 22, and the opening 28 of the vertical heat treatment furnace 22 is closed by the heat insulating member 1. Thereafter, the heater 21 is energized and the semiconductor wafer 24 is heat-treated.
[0031]
In this heat treatment step, the inside of the vertical heat treatment furnace 22 is maintained at a high temperature of about 1400 ° or more. However, the heat insulation member 1 made of a plurality of thin plate-like bodies 5 effectively shields the heat and the vertical heat treatment furnace 22 is used. The inside is kept at a high temperature. Further, since the heat insulating member 1 is a silicon carbide material and has excellent heat resistance, it can be used for a long time without being deformed even if it is exposed to a high temperature for a long time. Further, by displacing each joining position 10 of the thin plate-like body 5, it is possible to balance the thermal strain received by the heat insulating member 1. Further, for example, the loose insertion holes 4 a 1, 4 b 1, 4 c 1 of each thin plate-like body 5. Are not arranged in a straight line along the same column 2a, and heat leaks along one column 2 due to the high temperature gas flow (f) as shown by the dotted line in FIG. Heat leakage that occurs through the loose insertion hole 4 when heated is minimized.
[0032]
Furthermore, since the diameter of the loose insertion hole is not more than twice the diameter of the support column, heat leakage is effectively suppressed.
[0033]
Moreover, since the upper part 29 of the heat insulating member 1 is exposed to a high temperature and the lower part 30 is in contact with the room temperature, the support 2 and the thin plate-like body 5 of the heat insulation member 1 are thermally expanded. The joining with the thin plate-like body 5 is performed only at one place, and the thermal expansion of the support 2 and the thin plate-like body 5 is released by the loose fitting hole 4, and thermal stress is generated between the support 2 and the thin plate-like body 5. It does not occur and does not generate cracks or the like in the support column 2 and the thin plate-like body 5, and has a long life.
[0034]
Further, since the heat insulating member 1 does not use heat insulating glass wool and does not have a structure in which the thin plate-like body is attached to or detached from the groove portion of the support column, there is no cost for forming the groove portion. The vertical heat treatment furnace 22 can be kept clean without contaminating the vertical heat treatment furnace with dust.
[0035]
Although the said embodiment demonstrated the heat insulation member for semiconductor wafer heat processing apparatuses, the heat insulation member for heat processing apparatuses concerning this invention is not limited to the heat insulation member for semiconductor wafer heat processing apparatuses.
[0036]
Further, the heat insulating member for heat treatment apparatus includes not only a vertical type but also a horizontal type. Furthermore, although the vertical heat insulating member having three or more struts and having a circular bottom plate, top plate and thin plate-like body joined to the struts has been described, the heat insulating member according to the present invention is a shape of a heat treatment furnace. Depending on the above, the thin plate member may be rectangular, and it is not always necessary to form a CVD-SiC film on the surface of the heat insulating member. Further, the silicon carbide material forming the base material is not limited to Si—SiC by reaction sintering, but may be self-sintered SiC using B, C or the like as a sintering aid. Furthermore, when the heat insulating member is a horizontal type and a load such as a boat for a semiconductor wafer heat treatment apparatus is not applied to the heat insulating member, the number of support columns may be two.
[0037]
【The invention's effect】
According to the heat insulating member for a heat treatment apparatus according to the present invention, it is possible to provide a heat insulating member for a heat treatment apparatus that is free from contamination of a heat treatment furnace and is not deformed during use, has a long life, is inexpensive, and is particularly suitable for a heat insulating member for a semiconductor wafer heat treatment apparatus. it can. Moreover, the thermal distortion which a heat insulation member receives can be balanced by displacing the joining position of a plurality of adjacent thin plate-like bodies.
[0038]
Furthermore, since one support column loosely inserts the loose insertion hole and the through hole always penetrates in the joined state, the heat leak is shielded at the joining position, and the heat leak is minimized. Since the diameter of the loose insertion hole is not more than twice the diameter of the column, heat leakage is effectively suppressed. Further, if the diameter of the loose insertion hole is 1.42 times or more the diameter of the support column, the CVD-SiC film can be completely formed.
[0039]
Furthermore, in one thin plate-like body, the support and the thin plate-like body are joined at one place, and the thermal expansion of the support and the thin plate-like body is released by a loose fitting hole, and between the support and the thin plate-like body, No stress is generated, and there are no cracks or the like in the support pillars and the thin plate-like body, resulting in a long life.
[Brief description of the drawings]
FIG. 1 is a perspective view of a heat insulating member for a semiconductor wafer heat treatment apparatus according to an embodiment of the present invention.
FIG. 2 is a side view of a heat insulating member for a semiconductor wafer heat treatment apparatus according to an embodiment of the present invention.
FIG. 3 is an explanatory diagram showing a usage state of a heat insulating member for a semiconductor wafer heat treatment apparatus according to an embodiment of the present invention.
FIG. 4 is a manufacturing process flowchart of a heat insulating member for a semiconductor wafer heat treatment apparatus according to an embodiment of the present invention.
FIG. 5 is a side view of a conventional heat insulating member for a semiconductor wafer heat treatment apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Thermal insulation member for semiconductor wafer heat processing apparatus 2 Support | pillar 3 Through-hole 4 Free insertion hole 5 Thin plate-like body 6 Lower end part 7 Bottom plate 8 Upper end part 9 Top plate 10 Joining position

Claims

炭化珪素質材料からなる複数本の支柱と、この支柱が接合状態で貫通する１個の貫通孔と支柱が遊挿する遊挿孔とが設けられた炭化珪素質材料からなる複数枚の薄板状体とを有し、前記貫通孔を介して薄板状体を前記支柱に１ケ所で接合することにより、前記薄板状体を前記支柱に間隔を設けて保持することを特徴とする熱処理装置用断熱部材。A plurality of thin plate-like materials made of silicon carbide material provided with a plurality of pillars made of silicon carbide material, one through hole through which the pillars penetrate in a joined state, and loose insertion holes into which the pillars are loosely inserted. A heat treatment apparatus for heat treatment, characterized in that the thin plate member is held at a distance from the support column by joining the thin plate member to the support column at one location via the through-hole. Element.

上記複数枚の隣接する薄板状体は各々異なる支柱に接合されていることを特徴とする請求項１に記載の熱処理装置用断熱部材。The heat insulating member for a heat treatment apparatus according to claim 1, wherein the plurality of adjacent thin plate-like bodies are joined to different struts.

上記薄板状体の貫通孔は隣接する薄板状体の貫通孔とは１間隔変位して位置させ、複数枚の薄板状体と複数本の支柱の接合位置を順次変位させることを特徴とする請求項１または２に記載の熱処理装置用断熱部材。The through-holes of the thin plate-like bodies are positioned so as to be displaced by one interval from the through-holes of the adjacent thin plate-like bodies, and the joining positions of the plurality of thin plate-like bodies and the plurality of support columns are sequentially displaced. Item 3. A heat insulating member for a heat treatment apparatus according to item 1 or 2.

上記薄板状体の貫通孔および遊挿孔を薄板状体の中心点から等距離に位置させ、複数枚の薄板状体と複数本の支柱の接合位置を順次変位させることを特徴とする請求項１ないし３のいずれか１項に記載の熱処理装置用断熱部材。The through-hole and the loose insertion hole of the thin plate-like body are positioned equidistant from the center point of the thin plate-like body, and the joining positions of the plurality of thin plate-like bodies and the plurality of support columns are sequentially displaced. The heat insulation member for heat processing apparatus of any one of 1 thru | or 3.

上記薄板状体は円板形状であり、上記貫通孔および遊挿孔を前記薄板状体の同心円上に等間隔で位置させ、複数枚の薄板状体と複数本の支柱の接合位置を順次変位させることを特徴とする請求項１または３に記載の熱処理装置用断熱部材。The thin plate-like body is disc-shaped, and the through holes and loose insertion holes are positioned at equal intervals on the concentric circle of the thin plate-like body, and the joining positions of the plurality of thin plate-like bodies and the plurality of support columns are sequentially displaced. The heat insulating member for a heat treatment apparatus according to claim 1, wherein the heat insulating member is a heat insulating member.

上記支柱の断面は円形形状であり、薄板状体に形成される遊挿孔は円形であって、この遊挿孔の直径が支柱の直径の２倍以下であることを特徴とする請求項４または５に記載の熱処理装置用断熱部材。The cross section of the support column is circular, and the loose insertion hole formed in the thin plate member is circular, and the diameter of the loose insertion hole is not more than twice the diameter of the support column. Or the heat insulation member for heat processing apparatuses of 5.

上記遊挿孔の直径が支柱の直径の１．４倍以上であることを特徴とする請求項４ないし６のいずれか１項に記載の熱処理装置用断熱部材。The heat insulating member for a heat treatment apparatus according to any one of claims 4 to 6, wherein a diameter of the loose insertion hole is 1.4 times or more of a diameter of the support column.

上記３本以上の支柱は一端部で底板に立設され、他端部で縦型半導体ウェーハ熱処理装置用部材が載置される天板に固着されており、薄板状体は３枚以上である縦型半導体ウェーハ熱処理装置用断熱部材であることを特徴とする請求項１ないし７のいずれか１項に記載の熱処理装置用断熱部材。The three or more struts are erected on the bottom plate at one end, and are fixed to the top plate on which the member for the vertical semiconductor wafer heat treatment apparatus is placed at the other end, and the number of the thin plate-like bodies is three or more. The heat insulating member for heat treatment apparatus according to any one of claims 1 to 7, wherein the heat insulating member is a heat insulating member for a vertical semiconductor wafer heat treatment apparatus.