JP3743945B2 - Vapor growth method - Google Patents
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【０００１】
【発明の属する技術分野】
本発明は、反応炉内に設けられた回転式サセプタ上に載置した基板に対して公転運動および自転運動を与えながら薄膜を成長させる気相成長方法に関するものである。
【０００２】
【従来の技術】
近年、半導体の分野では生産性向上のためウェハサイズの大口径化が推進されている。
【０００３】
これに伴い、大口径化された基板上に薄膜を気相成長させる装置における膜厚の均一性の向上が大きな技術的課題となっている。
【０００４】
即ち、基板が大口径になると、反応炉内へ原料ガスを供給する場合に、原料ガスが上流側から下流側へ移行するにしたがって徐々に原料成分が消費されていく。そのため、膜厚が原料ガスの上流側で厚く、下流側で薄くなってしまうという問題があった。
【０００５】
また、反応炉の中心部から原料ガスを導入するタイプの放射状縦型気相成長装置では、ガスの拡散により大口径基板上の膜厚分布の変化は更に大きくなってしまうという難点があった。
【０００６】
そこで、基板を回転式のサセプタ上に載置し、基板に公転運動や自転運動を与えながら薄膜を成長させることにより、形成する薄膜の膜厚分布の均一性を向上させる方法が提案されている。
【０００７】
【発明が解決しようとする課題】
しかしながら、その後の研究により、上述のように基板に公転運動や自転運動を与えながら薄膜を成長させる方法によっても、大口径の基板について十分に均一化した膜厚分布を得ることはできないことが明らかとなってきた。
【０００８】
例えば、半径５０ｍｍの基板上に薄膜を気相成長する場合を考える。
基板中心が公転中心から１１５０ｍｍのところにあり、自公転比が２４：１１の場合、基板中心から距離ｒの点は、公転面内で図３に示すようなトロコイド曲線を描く。
ここで、基板面内での膜厚分布は、各距離ｒの軌跡と公転時の膜厚分布から決定される。
【０００９】
図４および〔表１〕に示すように公転のみの場合の膜厚分布が±２０％の点対称であるものを自公転させたとき、基板の外周部は中心部に比べて平均の滞留時間が短いため、中心部に対して相対膜厚は０．９５と薄くなってしまう。
【００１０】
【表１】
【００１１】
【課題を解決するための手段】
上記目的を達成するために、本発明は、反応炉内に設けられた回転式サセプタ上に載置した基板に対して公転運動および自転運動を与えながら薄膜を成長させる気相成長方法であって、上記基板について公転運動を与え、自転運動を与えない状態における膜厚分布の２次微分係数が正となる条件を見つけ、上記膜厚分布の２次微分係数が正となる条件の下で、上記基板に対して公転運動および自転運動を与えながら薄膜を成長させるようにしたものである。
【００１２】
これにより、上記基板に自転運動を与えて薄膜を成長させる場合に、従来であれば中央部が厚くなっていた膜厚分布が、膜厚分布の２次微分係数が正となる条件下によって相殺され、基板全体の膜厚分布の均一性を向上させることができる。
【００１３】
なお、上記基板上の膜厚分布の２次微分係数が正となる条件を、上記反応炉内に供給する原料ガスの供給速度を制御して得るようにしてもよい。
【００１４】
即ち、例えば、原料ガスの供給速度を制御すると共に基板付近を加熱して、基板上流で原料ガスの十分な分解時間を稼ぐことにより、基板中央部では原料ガスの成分が希薄な状態となり、膜厚分布のグラフ曲線が下凸型つまり膜厚分布の２次微分係数が正となる条件を得ることができ、この条件下で基板に公転運動と自転運動を与えながら薄膜を形成することにより基板全体の膜厚分布の均一性を高めることができるようになる。
【００１５】
また、上記基板上の膜厚分布の２次微分係数が正となる条件を、上記反応炉内に上記基板上に成長させる薄膜の構成元素の少なくとも一つと同一の元素を含む２種類以上の原料ガスを所定の混合比で供給するようにして得ることもできる。
【００１６】
さらに、上記同一の元素を含む２種類以上の原料ガスは、同じ温度における分解効率の異なる原料から構成されるようにしてもよい。
【００１７】
この場合に、例えば、分解効率の速い原料ガスと分解効率の遅い原料ガスとを所定の混合比で供給して、分解効率の速い原料が基板付近で殆ど無くなるように設定することにより膜厚分布のグラフ曲線が下凸型つまり膜厚分布の２次微分係数が正となる条件を得ることが可能となり、基板全体の膜厚分布の均一性を向上させることができるようになる。
【００１８】
なお、上記同一の元素はＧａであり、該Ｇａを含む２種類以上の原料ガスはＴＭＧａ（トリメチルガリウム）とＴＥＧａ（トリエチルガリウム）であるようにしてもよい。
【００１９】
さらにまた、上記基板上の膜厚分布の２次微分係数が正となる条件を、上記反応炉内に供給される原料ガスの上流側の熱分解を促進する触媒を用いて得ることもできる。
【００２０】
即ち、例えば、反応炉内の原料ガスの上流側に、触媒を設置することにより、原料ガスの上流側における熱分解が促進され、基板付近での原料ガスの成分を低減することができ、膜厚分布のグラフ曲線が下凸型つまり膜厚分布の２次微分係数が正とすることが可能となり、基板全体の膜厚分布の均一性を向上させることができる。
【００２１】
【発明の実施の形態】
ここで、本発明の実施形態の一例を図面を参照して説明する。
【００２２】
図１は、ＭＯＣＶＤ法によるＧａＡｓエピタキシャル成長において基板を自転させないときの気相成長装置内でのＧａＡｓ膜厚分布を示すグラフであり、図２は、基板を自転させたときのＧａＡｓ膜厚分布を示すグラフである。
【００２３】
図１において、横軸は気相成長装置内において原料ガス供給口からの距離を示し、６５ｍｍから１６５ｍｍの領域が直径４インチのＧａＡｓ基板２に相当している。また、縦軸は膜厚を示している。
【００２４】
本実施形態では、例えば前出の図４の（ｂ）のように、反応炉内に設けられる回転式サセプタ１に上記基板２を三枚載置し、公転運動および自転運動を与えながら、原料ガスを中央から外側に向かって放射状に供給して薄膜を形成するようにした。
【００２５】
また、本実施形態では、原料ガスとしてＧａを含むＴＭＧａ（トリメチルガリウム）とＴＥＧａ（トリエチルガリウム）およびＡｓＨ3（アルシン）等のＶ族水素化物などを用いて、基板２上にＧａＡｓの薄膜を形成した。
【００２６】
そして、反応炉において、まず基板２が自転しないようして（即ち公転運動のみを与えるようにして）、所定混合比の数種類の原料ガス（（１）＝ＴＭＧａ１００％，（２）＝ＴＥＧａ１０％／ＴＭＧａ９０％，（３）＝ＴＥＧａ２０％／ＴＭＧａ８０％，（４）＝ＴＥＧａ５０％／ＴＭＧａ５０％，（５）＝ＴＥＧａ１００％）を供給して、それぞれＧａＡｓ薄膜を形成する実験を行った。
【００２７】
なお、この場合に、ＡｓＨ3は、ＴＥＧａおよびＴＭＧａの総量に対して例えば２００の割合で供給した。
【００２８】
その結果、図１に示すように、原料ガス（１）〜（５）の何れにおいても上記４インチ基板領域において原料供給口からの距離が離れるほど膜厚が薄くなる分布となった。
【００２９】
４インチ基板領域における各膜厚の分布は、原料ガス（１）では最大で約９．０，最小で約７．８、原料ガス（２）では最大で約８．０，最小で約６．０、原料ガス（３）では最大で約７．２，最小で約５．５、原料ガス（４）では最大で約５．５，最小で約４．０、原料ガス（５）では最大で約２．８，最小で約１．０という結果を得た。
【００３０】
また、各原料ガス（１）〜（５）について、４インチ基板領域における各膜厚分布曲線の傾向を見ると、少なくとも原料ガス（４）（ＴＥＧａ５０％／ＴＭＧａ５０％）では若干下凸型、原料ガス（５）（ＴＥＧａ１００％）では明確な下凸型を示し、双方とも膜厚分布の２次微分係数が正となっていることが判る。
【００３１】
一方、原料ガス（１）（ＴＭＧａ１００％）の膜厚分布曲線は略直線的であり、ＴＥＧａの割合を増やすにつれて徐々に分布曲線の形状が下凸型となり、膜厚分布の２次微分係数が正の傾向を示すことが判る（原料ガス（２），（３））。
【００３２】
したがって、例えば原料ガス（４）と原料ガス（５）の中間帯の混合比、即ち、ＴＥＧａを５０〜１００％の範囲でＴＭＧａと混合した原料ガスを用いるならば、上記のように膜厚分布の２次微分係数が正となる効果から、基板２に自転運動を与えた際に中央部の膜厚が厚くなる傾向を相殺して、ＧａＡｓ膜の膜厚分布を均一化するように作用すると推論することができる。
【００３３】
図２は、上記推論の実証と、他の混合比の原料ガスを用いた場合の比較を目的として、基板２に公転運動および自転運動を与えながら、反応炉内に上記原料ガス（１）〜（５）を供給してＧａＡｓの薄膜を形成した。
【００３４】
その結果、図２のような膜厚分布を示すグラフを得た。図２のグラフにおいて、横軸は基板中心からの距離、縦軸は相対膜厚を示している。
【００３５】
これによれば、４インチ基板上のＧａＡｓ膜の膜厚分布は、原料ガス（４）（ＴＥＧａ５０％／ＴＭＧａ５０％）を用いた場合に最も均一性が高かった。即ち、最も膜厚の厚い基板中央部を約１．０００とした場合に、最も薄い周縁部でも０．９９００以上であり、膜厚分布のバラツキは±０．５％と極めて均一なＧａＡｓ薄膜が形成されていることが確認できた。
【００３６】
これは、先の推論のように、原料ガス（４）における膜厚分布の２次微分係数が正となる効果から、中央部の膜厚が厚くなる傾向が相殺されたためであると考えられる。
【００３７】
また、原料ガス（２），（３）については、ＴＥＧａをそれぞれ１０％，２０％混合した効果で、ＴＭＧａ１００％の原料ガス（１）よりも若干膜厚分布の均一性が向上しているが、前記原料ガス（４）の効果には及ばなかった。
【００３８】
一方、原料ガス（５）は、膜厚分布の２次微分係数が正となる傾向が強すぎるため、逆に基板の周縁部の膜厚が厚く中央部が薄いという膜厚分布となってしまい、膜厚の均一化の向上を図ることができなかった。
【００３９】
以上のように、本実施形態によれば、ＴＥＧａ５０％／ＴＭＧａ５０％で混合した原料ガスを用いることにより、ＧａＡｓ基板２上に形成するＧａＡｓ薄膜の膜厚分布の均一性を向上させることができ、特に基板が大口径化した場合に均一な膜厚の薄膜を形成するのに有効である。
【００４０】
なお、さらに実験を重ね、ＴＥＧａとＴＭＧａのより最適な混合比を割り出すことにより基板の中央部と周縁部との膜厚差をより小さくして、膜厚分布の一層の均一化を達成することが期待できる。
【００４１】
また、本実施形態では、基板に自転運動を与えない状態において、原料ガスとしてのＴＥＧａとＴＭＧａの混合比を変えることにより、膜厚分布の２次微分係数が正となるようにする場合について説明したが、これに限られるものではなく、その他、同じ温度における分解効率の異なる原料を適当な割合で混合して供給するようにしてもよい。
【００４２】
また、例えば一種類の原料ガスを用いる場合であっても反応炉内への供給速度を適当に制御することにより、膜厚分布の２次微分係数が正となるようにすることも可能である。
【００４３】
さらに、反応炉内に一方向に供給される原料ガスの上流側の熱分解を促進する触媒を用いることにより、膜厚分布の２次微分係数を正とすることも考えられる。
【００４４】
以上、基板上にＧａＡｓ薄膜を成長させる場合について説明したが、これに限られるものではなく、ＡｌＧａＡｓやＩｎＧａＡｓＰなどの３元系，４元系はもちろん、一般的な気相成長法による薄膜の形成にも適用することができる。
【００４５】
【発明の効果】
本発明によれば、反応炉内に設けられた回転式サセプタ上に載置した基板に対して公転運動および自転運動を与えながら薄膜を成長させる気相成長方法であって、上記基板について公転運動を与え、自転運動を与えない状態における膜厚分布の２次微分係数が正となる条件を見つけ、上記膜厚分布の２次微分係数が正となる条件の下で、上記基板に対して公転運動および自転運動を与えながら薄膜を成長させるようにしたので、上記基板に公転運動と自転運動を与えて薄膜を成長させる場合に、従来であれば中央部が厚くなっていた膜厚分布が、膜厚分布の２次微分係数を正としたことで相殺され、基板全体の膜厚分布の均一性を向上させることができるという優れた効果がある。
【図面の簡単な説明】
【図１】本実施形態に係るＭＯＣＶＤ法によるＧａＡｓエピタキシャル成長において基板を自転させないときの気相成長装置内でのＧａＡｓ膜厚分布を示すグラフである。
【図２】本実施形態に係るＭＯＣＶＤ法によるＧａＡｓエピタキシャル成長において基板を自転させたときのＧａＡｓ膜厚分布を示すグラフである。
【図３】基板に公転運動と自転運動を与えた際の軌跡のパターンを示す参考図である。
【図４】従来において基板に公転運動および自転運動を与えた際の膜厚分布を示すグラフおよび基板を載置した回転式サセプタを示す概略図である。
【符号の説明】
１ 回転式サセプタ
２ 基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vapor phase growth method for growing a thin film while applying a revolving motion and a rotation motion to a substrate placed on a rotary susceptor provided in a reaction furnace.
[0002]
[Prior art]
In recent years, an increase in wafer size has been promoted in the semiconductor field in order to improve productivity.
[0003]
Along with this, improvement in film thickness uniformity in an apparatus for vapor-phase growth of a thin film on a large-diameter substrate has become a major technical problem.
[0004]
That is, when the substrate has a large diameter, when the raw material gas is supplied into the reaction furnace, the raw material components are gradually consumed as the raw material gas moves from the upstream side to the downstream side. Therefore, there has been a problem that the film thickness is thick on the upstream side of the source gas and thin on the downstream side.
[0005]
In addition, the radial vertical vapor phase growth apparatus of the type in which the source gas is introduced from the center of the reaction furnace has a problem that the change in the film thickness distribution on the large-diameter substrate is further increased due to gas diffusion.
[0006]
Therefore, a method for improving the uniformity of the film thickness distribution of the thin film to be formed by placing the substrate on a rotary susceptor and growing the thin film while subjecting the substrate to revolving motion and rotational motion has been proposed. .
[0007]
[Problems to be solved by the invention]
However, it is clear from subsequent research that it is not possible to obtain a sufficiently uniform film thickness distribution for a large-diameter substrate even by the method of growing a thin film while imparting revolution or rotation to the substrate as described above. It has become.
[0008]
For example, consider a case where a thin film is vapor-phase grown on a substrate having a radius of 50 mm.
When the substrate center is 1150 mm from the revolution center and the revolution ratio is 24:11, a point at a distance r from the substrate center draws a trochoid curve as shown in FIG. 3 in the revolution plane.
Here, the film thickness distribution in the substrate plane is determined from the trajectory of each distance r and the film thickness distribution at the time of revolution.
[0009]
As shown in FIG. 4 and [Table 1], when the film thickness distribution in the case of revolving only is point-symmetrical with ± 20%, the outer peripheral portion of the substrate has an average residence time compared to the central portion. Therefore, the relative film thickness becomes as thin as 0.95 with respect to the central portion.
[0010]
[Table 1]
[0011]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a vapor phase growth method for growing a thin film while applying a revolving motion and a rotational motion to a substrate placed on a rotary susceptor provided in a reaction furnace. , Find a condition in which the second derivative of the film thickness distribution is positive in a state in which the revolution motion is given to the substrate and no rotation motion is given, and under the condition that the second derivative of the film thickness distribution is positive, A thin film is grown while applying revolving motion and rotational motion to the substrate.
[0012]
As a result, when a thin film is grown by applying a rotational motion to the substrate, the film thickness distribution, which has been thick at the center in the prior art, is canceled depending on the condition that the second derivative of the film thickness distribution is positive. Thus, the uniformity of the film thickness distribution of the entire substrate can be improved.
[0013]
In addition, you may make it obtain the conditions from which the secondary differential coefficient of the film thickness distribution on the said substrate becomes positive by controlling the supply speed | rate of the source gas supplied in the said reaction furnace.
[0014]
That is, for example, by controlling the supply speed of the source gas and heating the vicinity of the substrate to obtain a sufficient decomposition time of the source gas upstream of the substrate, the component of the source gas becomes dilute at the center of the substrate, and the film It is possible to obtain a condition in which the graph curve of the thickness distribution is downwardly convex, that is, the condition that the second derivative of the film thickness distribution is positive. The uniformity of the overall film thickness distribution can be improved.
[0015]
Further, two or more kinds of raw materials containing the same element as at least one of the constituent elements of the thin film grown on the substrate in the reactor under the condition that the second-order differential coefficient of the film thickness distribution on the substrate is positive It can also be obtained by supplying the gas at a predetermined mixing ratio.
[0016]
Further, the two or more kinds of source gases containing the same element may be composed of sources having different decomposition efficiencies at the same temperature.
[0017]
In this case, for example, by supplying a raw material gas having a high decomposition efficiency and a raw material gas having a low decomposition efficiency at a predetermined mixing ratio, and setting so that the raw material having a high decomposition efficiency is almost eliminated near the substrate, the film thickness distribution It is possible to obtain a condition in which the graph curve is convex downward, that is, the condition that the second-order differential coefficient of the film thickness distribution is positive, and the uniformity of the film thickness distribution of the entire substrate can be improved.
[0018]
The same element may be Ga, and two or more kinds of source gases containing Ga may be TMGa (trimethyl gallium) and TEGa (triethyl gallium).
[0019]
Furthermore, the condition that the second-order differential coefficient of the film thickness distribution on the substrate is positive can be obtained by using a catalyst that promotes thermal decomposition on the upstream side of the raw material gas supplied into the reaction furnace.
[0020]
That is, for example, by installing a catalyst on the upstream side of the source gas in the reaction furnace, thermal decomposition on the upstream side of the source gas is promoted, and the components of the source gas in the vicinity of the substrate can be reduced. The graph curve of the thickness distribution has a downward convex shape, that is, the secondary differential coefficient of the film thickness distribution can be positive, and the uniformity of the film thickness distribution of the entire substrate can be improved.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Here, an example of an embodiment of the present invention will be described with reference to the drawings.
[0022]
FIG. 1 is a graph showing the GaAs film thickness distribution in the vapor phase growth apparatus when the substrate is not rotated in the GaAs epitaxial growth by MOCVD, and FIG. 2 shows the GaAs film thickness distribution when the substrate is rotated. It is a graph.
[0023]
In FIG. 1, the horizontal axis indicates the distance from the source gas supply port in the vapor phase growth apparatus, and the region of 65 mm to 165 mm corresponds to the
[0024]
In this embodiment, for example, as shown in FIG. 4 (b), three
[0025]
In this embodiment, a GaAs thin film is formed on the
[0026]
Then, in the reaction furnace, first, the
[0027]
In this case, AsH3 was supplied at a ratio of, for example, 200 with respect to the total amount of TEGa and TMGa.
[0028]
As a result, as shown in FIG. 1, in any of the source gases (1) to (5), the film thickness was reduced as the distance from the source supply port increased in the 4-inch substrate region.
[0029]
The distribution of each film thickness in the 4-inch substrate region is about 9.0 for the source gas (1), about 7.8 for the minimum, about 8.0 for the source gas (2), and about 6. for the minimum. 0, maximum of about 7.2 for source gas (3), about 5.5 for minimum, maximum of about 5.5 for source gas (4), maximum of about 4.0 for source gas (5) The result was about 2.8, and a minimum of about 1.0.
[0030]
Further, regarding the respective source gases (1) to (5), when the tendency of each film thickness distribution curve in the 4-inch substrate region is seen, at least the source gas (4) (TEGa50% / TMGa50%) is slightly downward convex, The gas (5) (
[0031]
On the other hand, the film thickness distribution curve of the source gas (1) (TMGa100%) is substantially linear, and as the ratio of TEGa is increased, the shape of the distribution curve gradually becomes downward convex, and the second derivative of the film thickness distribution is It turns out that it shows a positive tendency (source gas (2), (3)).
[0032]
Therefore, for example, if a raw material gas in which TMGa is mixed with TMGa in the range of 50 to 100% of the mixing ratio of the intermediate zone of the raw material gas (4) and the raw material gas (5), that is, TEGa, is used as described above. From the effect that the second-order differential coefficient is positive, when the
[0033]
FIG. 2 shows the above source gas (1) to (2) in the reactor while giving the revolution motion and the rotation motion to the
[0034]
As a result, a graph showing the film thickness distribution as shown in FIG. 2 was obtained. In the graph of FIG. 2, the horizontal axis indicates the distance from the center of the substrate, and the vertical axis indicates the relative film thickness.
[0035]
According to this, the film thickness distribution of the GaAs film on the 4-inch substrate was most uniform when the source gas (4) (TEGa50% / TMGa50%) was used. That is, when the center of the thickest substrate is about 1.000, the thinnest peripheral edge is 0.9900 or more, and the dispersion of the film thickness distribution is ± 0.5%, which is an extremely uniform GaAs thin film. It was confirmed that it was formed.
[0036]
This is considered to be because the tendency that the thickness of the central portion becomes thick is offset by the effect that the second derivative of the thickness distribution in the raw material gas (4) becomes positive as in the previous inference.
[0037]
In addition, as for the source gases (2) and (3), the uniformity of the film thickness distribution is slightly improved as compared with the
[0038]
On the other hand, since the source gas (5) has a tendency that the second derivative of the film thickness distribution is positive, the film thickness distribution is such that the film thickness at the periphery of the substrate is thick and the center is thin. The film thickness could not be improved.
[0039]
As described above, according to the present embodiment, the uniformity of the film thickness distribution of the GaAs thin film formed on the
[0040]
In addition, by further experimenting, by finding a more optimal mixing ratio of TEGa and TMGa, the film thickness difference between the central part and the peripheral part of the substrate is made smaller, and the film thickness distribution is made more uniform. Can be expected.
[0041]
Further, in the present embodiment, the case where the secondary differential coefficient of the film thickness distribution is made positive by changing the mixing ratio of TEGa and TMGa as the source gas in a state where no rotation motion is given to the substrate will be described. However, the present invention is not limited to this, and other raw materials having different decomposition efficiencies at the same temperature may be mixed and supplied at an appropriate ratio.
[0042]
Further, for example, even when one kind of source gas is used, it is possible to make the second derivative of the film thickness distribution positive by appropriately controlling the supply rate into the reaction furnace. .
[0043]
Furthermore, it is conceivable that the secondary differential coefficient of the film thickness distribution is made positive by using a catalyst that promotes thermal decomposition of the upstream side of the raw material gas supplied in one direction into the reactor.
[0044]
The case where a GaAs thin film is grown on a substrate has been described above. However, the present invention is not limited to this, and the formation of a thin film by a general vapor deposition method as well as ternary and quaternary systems such as AlGaAs and InGaAsP. It can also be applied to.
[0045]
【The invention's effect】
According to the present invention, there is provided a vapor phase growth method for growing a thin film while applying a revolving motion and a rotational motion to a substrate placed on a rotary susceptor provided in a reaction furnace, wherein the revolving motion is performed on the substrate. , Find a condition that the second derivative of the film thickness distribution is positive in a state where no rotation motion is given, and revolve with respect to the substrate under the condition that the second derivative of the film thickness distribution is positive. Since the thin film was grown while applying the motion and rotation, when the film was grown by applying the revolving motion and rotation to the substrate, the film thickness distribution that had been thick at the center in the past was This is offset by setting the second-order differential coefficient of the film thickness distribution to be positive, and there is an excellent effect that the uniformity of the film thickness distribution of the entire substrate can be improved.
[Brief description of the drawings]
FIG. 1 is a graph showing a GaAs film thickness distribution in a vapor phase growth apparatus when a substrate is not rotated in GaAs epitaxial growth by MOCVD according to the present embodiment.
FIG. 2 is a graph showing a GaAs film thickness distribution when a substrate is rotated in GaAs epitaxial growth by MOCVD according to the present embodiment.
FIG. 3 is a reference diagram showing a trajectory pattern when a revolution motion and a rotation motion are given to a substrate.
FIG. 4 is a schematic view showing a graph showing a film thickness distribution when a revolving motion and a rotational motion are given to a substrate and a rotary susceptor on which the substrate is placed.
[Explanation of symbols]
1 Rotating
Claims (6)
上記基板に公転運動を与え、自転運動を与えない状態で薄膜を成長させたときに得られる上記回転式サセプタの中心と上記基板の中心を通る直線上での成長薄膜の膜厚のサセプタ中心での膜厚を１０とした相対値を、上記直線上における上記回転式サセプタの中心からの距離を変数とする関数で表したとき、上記変数が上記基板の中心位置から±２インチの値となる範囲において、上記関数の２次微分係数が常に正の単調減少関数となり、かつ、上記関数の最小値が４以上で、最大値と最小値の差が２以下となるように成長条件を設定し、
該成長条件の下で上記基板に対して公転運動及び自転運動を与えながら薄膜を成長させることを特徴とする気相成長方法。Using the vapor phase growth apparatus that introduces the source gas from the center of the reaction furnace and supplies the source gas radially from the center of the disk-shaped rotary susceptor provided in the reaction furnace, the above rotation A vapor phase growth method in which a thin film is grown while giving a revolving motion and a rotational motion to a substrate placed on a susceptor,
At the center of the susceptor with the thickness of the grown thin film on the straight line passing through the center of the rotary susceptor and the center of the substrate obtained when the thin film is grown in a state where the substrate is revolved and no rotation motion is given. When the relative value with the film thickness of 10 is expressed by a function having the distance from the center of the rotary susceptor on the straight line as a variable, the variable is a value of ± 2 inches from the center position of the substrate. In the range, the growth condition is set so that the second derivative of the function is always a positive monotonically decreasing function, the minimum value of the function is 4 or more, and the difference between the maximum value and the minimum value is 2 or less. ,
A vapor phase growth method characterized in that a thin film is grown while applying a revolving motion and a rotational motion to the substrate under the growth conditions.
上記２次微分係数が正となるように上記２種類以上の原料ガスを所定の比率で混合することを特徴とする請求項１または請求項２に記載の気相成長方法。When supplying two or more source gases containing the same element as at least one of the constituent elements of the thin film grown on the substrate,
The vapor phase growth method according to claim 1 or 2, wherein the two or more kinds of source gases are mixed at a predetermined ratio so that the second-order differential coefficient is positive.
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| JP17830398A JP3743945B2 (en) | 1998-06-25 | 1998-06-25 | Vapor growth method |
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