JP3732244B2 - X-ray imaging device - Google Patents

X-ray imaging device Download PDF

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JP3732244B2
JP3732244B2 JP23801094A JP23801094A JP3732244B2 JP 3732244 B2 JP3732244 B2 JP 3732244B2 JP 23801094 A JP23801094 A JP 23801094A JP 23801094 A JP23801094 A JP 23801094A JP 3732244 B2 JP3732244 B2 JP 3732244B2
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Prior art keywords
electrode
ray
detection
detection unit
amplifier
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JPH08102890A (en
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昌昭 浮田
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Shimadzu Corp
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Shimadzu Corp
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Description

【０００１】
【産業上の利用分野】
本発明は、Ｘ線固体検出器、Ｘ線アレイセンサー、Ｘ線量子計数器等を用いたＸ線撮像装置に関する。
【０００２】
【従来の技術】
一般に、Ｘ線撮像装置は複数個の半導体Ｘ線検出器を１次元もしくは２次元状に配列した検出器アレイに被写体を透過後のＸ線を入射させ、そのとき発生する電荷量または電荷パルス数を用いて、画像信号を得るようにしている。例えば、図７は電荷パルス数を計数するようにした装置の構成例である。
【０００３】
Ｓ1 〜Ｓn は１次元もしくは２次元状に配列された半導体Ｘ線検出器であり、この各検出器には各々、逆バイアス電圧−ＶB が加えられている。
【０００４】
各半導体Ｘ線検出器Ｓ1 〜Ｓn にＸ線が入射すると、パルス状の電流が発生し、このパルス信号が増幅器４１で増幅され、波形整形回路４２を経た後、比較回路４３の基準電圧Ｖf によってバックグランドが除去され、Ｘ線入射に起因するパルスのみが弁別される。
【０００５】
この弁別後のパルスはパルス計数回路４４に導かれて計数され、各計数回路の出力信号は次の情報処理回路４５で処理することによって画像濃度情報等を作成し、ＣＲＴ４６上に表示するようにしている。
【０００６】
図８は半導体Ｘ線検出器と増幅器との接続部分を詳細に示したものであり、半導体Ｘ線アレイ検出器５０が、図６の半導体Ｘ線検出器Ｓ1 〜Ｓn に相当する部分である。この半導体Ｘ線アレイ検出器５０の上側にバイアス電極４９が、下側には電荷取り出し電極として検出電極４８とガード電極４７が形成されている。
電荷取り出し電極の内ガード電極４７は、検出器の周縁に形成され、接地されている。図のアレイ検出器中に記載された実線は電気力線（電荷ドリフトライン）を示す。
【０００７】
バイアス電極４９には逆バイアス電圧が印加され、検出電極４８は増幅器４１の入力端子に接続されている。半導体Ｘ線アレイ検出器５０にＸ線が入射すると、そのＸ線のエネルギーに相当する数の電子が発生する。この電子が電気力線に沿って検出電極４８の方へ移動することで電荷パルスが発生し、この電荷パルスを次の増幅器４１で増幅してＸ線を検出する。
【０００８】
この検出器の各画素の分解能・感度は、検出電極４８の配置間隔で決まるが、各画素の分解能・感度を均一に保つためにガード電極４７が設けられている。
【０００９】
すなわち、半導体Ｘ線アレイ検出器の周縁部は電場が乱れて正確なＸ線検出ができないので、周縁部はＸ線を検出しないようにダミーとするとともに、これを増幅器入力電位（通常は０Ｖ近辺）付近に固定することで他の検出電極に与える電界の影響を軽微なものとし、Ｘ線検出を安定化している。
【００１０】
【発明が解決しようとする課題】
しかし、上記従来技術では各検出画素の空間分解能や感度を安定的に均一に保つには良いが、検出画素の空間分解能や感度（有感体積）を変えようとすると、検出電極間隔を変えたものを製作するしかなかった。
【００１１】
本発明は、上記課題を解決するために創案されたもので、検出画素の空間分解能や感度（有感体積）を変えたい場合に、その都度検出電極間隔を変更した装置を製作することなく、簡単に空間分解能や感度を変化させられるＸ線撮像装置を提供するものである。
【００１２】
【課題を解決するための手段】
上記目的を達成するために、請求項１にかかるＸ線撮像装置は、Ｘ線検出部と、このＸ線検出部の一方に形成されたバイアス電極と、他方に形成された電荷取り出し電極とを備え、Ｘ線の入射によりＸ線検出部から発生する電荷を検出して画像を形成する装置において、前記電荷取り出し電極間にガード電極を設けると共に、前記ガード電極に可変の電圧を印加する電圧源を設けたことを特徴とする。
また、請求項２にかかるＸ線撮像装置は、Ｘ線検出部と、前記Ｘ線検出部の一方に形成されたバイアス電極と、他方に形成された複数の電荷取り出し電極と、それぞれの電荷取り出し電極に接続された増幅器を備え、Ｘ線の入射により前記Ｘ線検出部から発生する電荷を検出して画像を形成する装置において、前記それぞれの増幅器に供給されている電源電圧を個別に変化させて各増幅器の動作点を変化させ、前記複数の電荷取り出し電極の各電位を任意に変更できるようにしたことを特徴とする。
【００１３】
【作用】
Ｘ線検出部にＸ線が入射すると、そのＸ線のエネルギーに相当する数の電子が発生し、Ｘ線検出部内の電気力線に沿って電荷取り出し電極まで移動する。
【００１４】
しかし、電荷取り出し電極には電位を制御する手段が設けられているので、この制御手段によって電荷取り出し電極の電位を変化させると、バイアス電極から電荷取り出し電極に向かう電気力線が変化するため、電子を集積する有感体積が変わり、電荷取り出し電極における分解能・感度を変えることができる。
【００１５】
【実施例】
本発明の一実施例を、以下、図面に基づいて説明する。
【００１６】
図１は本発明によるＸ線撮像装置の主要構成図を示す。
【００１７】
１は半導体Ｘ線アレイ検出器、２はバイアス電極、３は半導体Ｘ線結晶等のＸ線検出部、４は電荷を検出しないガード電極、５ａ〜５ｃは電荷を検出するための検出電極、６は増幅器、７はガード電極４の電位を制御する手段としての切換器である。
【００１８】
半導体Ｘ線アレイ検出器１はバイアス電極２、Ｘ線検出器部３、ガード電極４、検出電極５ａ〜５ｃからなり、バイアス電極２には逆バイアス電圧（−ＶB ）が印加されている。各検出電極は増幅器６に接続され、増幅器６の先は図６に示すような波形整形回路、比較回路、計数回路、情報処理回路等に接続されており、画像濃淡情報等がＣＲＴ上に表示されるようになっている。ガード電極４は切換器７に接続され、切換器７の接点の一方は接地されている。
【００１９】
Ｘ線検出器部３にＸ線が入射すると、Ｘ線のエネルギーに相当する数の電子が発生する。この電子は電気力線に沿って検出電極５ａ〜５ｃの方へ移動して電荷パルスとして検出されるが、この状態は切換器７を切換えることによって変化する。
【００２０】
図２は２個の切換器７を両方とも開放したときの電気力線（電荷ドリフトライン）の様子を示したものである。ガード電極４の電位は開放されているのでガード電極４とバイアス電極２との間には電気力線が生じず、バイアス電極２の周縁では電気力線は検出電極５ａ、５ｃの方へ向かう。
【００２１】
Ｘ線検出器部３で発生した電子は電気力線に沿って各検出電極へ移動するので、各検出電極に集まる電気力線の範囲が大きい程、より多くの電子を集積させることができ、有感体積が広がるので感度は向上する。
【００２２】
一方、有感体積が広がることは広範囲に入射したＸ線を一つの検出電極で検出することになるので空間分解能は低下する。
【００２３】
したがって、図の検出電極５ａ、５ｃに対応する検出画素の感度は向上し、空間分解能は低下する。また、検出電極５ｂに対応する検出画素の分解能・感度はほとんど変わらない。
【００２４】
次に切換器７を接地されている接点の方へ切換えたときにはガード電極４は接地されることになるので、このときの電気力線の様子は図７と同一となり、上記ガード電極４の電位が開放されている場合に比べて検出電極５ａ、５ｃに対応する検出画素の感度は低下し、分解能は向上する。
【００２５】
このようにして、簡単に検出画素の空間分解能・感度を変化させることができる。
【００２６】
図３は他の実施例のＸ線撮像装置の主要構成図を示し、図４、図５は電気力線の様子を示したものである。
【００２７】
図３において図１と同じ構成部分には同じ符号を付してある。図１と異なる部分は切換器７の代わりに電圧源８をガード電極４に接続し、これを電位を制御する手段としたことである。電圧源８は＋Ｖs 〜−Ｖs まで供給電圧を連続的に変化させられるようになっている。
【００２８】
ここで、電圧源８の電圧を＋Ｖs にしたときの電気力線の様子を示したのが図４であり、バイアス電極２からガード電極４へ電気力線が発生し、有感体積が減少するので、検出電極５ａ、５ｃへ移動する電子の個数は減少し、検出電極５ａ、５ｃに対応する検出画素の空間分解能は向上し、感度は低下する。
【００２９】
一方、電圧源８の電圧を−Ｖs にしたときの電気力線の様子を示したのが図５でありバイアス電極２からガード電極４へ電気力線が発生せず、有感体積が増大するので、検出電極５ａ、５ｃに対応する検出画素の空間分解能は低下し、感度は向上する。検出電極５ｂに対応する検出画素の空間分解能・感度はガード電極４の電位が変化してもほとんど変わらない。
【００３０】
なお、電圧源８の電圧を連続的に変化させれば、電気力線の状態がそれに応じて変化するので、検出画素の空間分解能・感度を変化させることができる。
【００３１】
以上の実施例では２つのガード電極７の電位を同じ方向へ変えているが、これを個々に変えるようにしても良く、Ｘ線検出中に各検出電極の検出結果をフィードバックして、ガード電極７に加える電位を最適なものにするようにしても良い。 また、ガード電極の電位を装置の外部から操作できるように構成することもできる。
【００３２】
さらに、上述した実施例では検出電極５ｂに対応する検出画素の空間分解能・感度を変化させることができないので、ガード電極と検出電極を交互に配置してすべての検出電極に対応する検出画素の空間分解能・感度を変化させられるようにしても良い。ただし、この場合ガード電極は電荷の検出は行わない電極であるので、ガード電極を接地または正電位とした場合に半導体Ｘ線アレイ検出器の広範囲に渡って、不感領域が生じる。
【００３３】
そこで、ガード電極を用いずに、検出電極のみとし個々の検出電極に接続される増幅器の入力電位すなわち、検出電極の電位を制御できるようにしても良い。この場合の一例としては図６に示すように各増幅器６に供給されている電源電圧±ＶD を個別に変化させて各増幅器の動作点を変化させるようにする方法がある。このようにすれば、結果的に各検出電極５ａ〜５ｅの電位を任意に変えることができるので、検出画素の空間分解能・感度を任意に制御できる。
【００３４】
【発明の効果】
以上説明したように、本発明のＸ線撮像装置によれば、電荷取り出し電極の電位を必要に応じて変化させるようにしたので、バイアス電極と電荷取り出し電極の間に発生する電気力線の状態が変化し、検出画素に対する有感体積を増減させることができるので、検出電極間隔を変更した装置を製作することなく、簡単に空間分解能や感度を変化させることができる。
【図面の簡単な説明】
【図１】本発明の一実施例のＸ線撮像装置の構成を示す図である。
【図２】図１のガード電極の電位が開放されている場合の電気力線を示す図である。
【図３】本発明の他の実施例のＸ線撮像装置の構成を示す図である。
【図４】図３のガード電極に＋Ｖs の電位が印加された場合の電気力線を示す図である。
【図５】図３のガード電極に−Ｖs の電位が印加された場合の電気力線を示す図である。
【図６】ガード電極を用いない実施例のＸ線撮像装置の構成を示す図である。
【図７】Ｘ線撮像装置の全体構成を示す図である。
【図８】従来のＸ線撮像装置の主要部を示す図である。[0001]
[Industrial application fields]
The present invention relates to an X-ray imaging apparatus using an X-ray solid state detector, an X-ray array sensor, an X-ray quantum counter, and the like.
[0002]
[Prior art]
In general, in an X-ray imaging apparatus, X-rays that have passed through a subject are incident on a detector array in which a plurality of semiconductor X-ray detectors are arranged one-dimensionally or two-dimensionally, and the amount of charges or the number of charge pulses generated at that time. Is used to obtain an image signal. For example, FIG. 7 shows an example of the configuration of an apparatus that counts the number of charge pulses.
[0003]
S 1 to S n is a semiconductor X-ray detectors arranged in a one-dimensional or two-dimensionally, each for the respective detectors, the reverse bias voltage -V B are added.
[0004]
When X-rays enter each of the semiconductor X-ray detectors S 1 to S n , a pulsed current is generated. This pulse signal is amplified by the amplifier 41, passes through the waveform shaping circuit 42, and then the reference voltage of the comparison circuit 43. The background is removed by V f and only the pulses due to X-ray incidence are discriminated.
[0005]
The pulses after the discrimination are guided to the pulse counting circuit 44 and counted, and the output signal of each counting circuit is processed by the next information processing circuit 45 so as to create image density information and display it on the CRT 46. ing.
[0006]
Figure 8 is shows a connection portion between the semiconductor X-ray detector and the amplifier in detail, the semiconductor X-ray array detector 50, at a portion corresponding to the semiconductor X-ray detectors S 1 to S n in FIG. 6 is there. A bias electrode 49 is formed on the upper side of the semiconductor X-ray array detector 50, and a detection electrode 48 and a guard electrode 47 are formed on the lower side as charge extraction electrodes.
An inner guard electrode 47 of the charge extraction electrode is formed on the periphery of the detector and is grounded. The solid line described in the array detector in the figure indicates the electric force lines (charge drift lines).
[0007]
A reverse bias voltage is applied to the bias electrode 49, and the detection electrode 48 is connected to the input terminal of the amplifier 41. When X-rays enter the semiconductor X-ray array detector 50, a number of electrons corresponding to the energy of the X-rays are generated. The electrons move toward the detection electrode 48 along the lines of electric force to generate a charge pulse. The charge pulse is amplified by the next amplifier 41 to detect X-rays.
[0008]
The resolution and sensitivity of each pixel of the detector is determined by the arrangement interval of the detection electrodes 48, but a guard electrode 47 is provided to keep the resolution and sensitivity of each pixel uniform.
[0009]
In other words, since the electric field is disturbed at the peripheral portion of the semiconductor X-ray array detector and accurate X-ray detection cannot be performed, the peripheral portion is set as a dummy so as not to detect X-rays, and this is used as an amplifier input potential (usually around 0V). ) The X-ray detection is stabilized by fixing in the vicinity to minimize the influence of the electric field on the other detection electrodes.
[0010]
[Problems to be solved by the invention]
However, in the above-mentioned conventional technique, it is good to maintain the spatial resolution and sensitivity of each detection pixel stably and uniformly, but when changing the spatial resolution and sensitivity (sensitive volume) of the detection pixel, the detection electrode interval was changed. There was no choice but to make things.
[0011]
The present invention was devised to solve the above problems, and when it is desired to change the spatial resolution and sensitivity (sensitive volume) of the detection pixel, without producing a device in which the detection electrode interval is changed each time, An X-ray imaging apparatus capable of easily changing spatial resolution and sensitivity is provided.
[0012]
[Means for Solving the Problems]
In order to achieve the above object, an X-ray imaging apparatus according to claim 1 includes an X-ray detection unit, a bias electrode formed on one side of the X-ray detection unit, and a charge extraction electrode formed on the other side. A voltage source for providing a guard electrode between the charge extraction electrodes and applying a variable voltage to the guard electrode. Is provided.
According to a second aspect of the present invention, an X-ray imaging apparatus includes: an X-ray detection unit; a bias electrode formed on one of the X-ray detection units; a plurality of charge extraction electrodes formed on the other; In an apparatus that includes an amplifier connected to an electrode and detects an electric charge generated from the X-ray detection unit upon incidence of X-rays to form an image, the power supply voltage supplied to each amplifier is individually changed. Thus, the operating point of each amplifier is changed so that each potential of the plurality of charge extraction electrodes can be arbitrarily changed.
[0013]
[Action]
When X-rays enter the X-ray detection unit, a number of electrons corresponding to the energy of the X-rays are generated, and move to the charge extraction electrode along the lines of electric force in the X-ray detection unit.
[0014]
However, since the electric charge extraction electrode is provided with a means for controlling the electric potential, if the electric potential of the electric charge extraction electrode is changed by this control means, the lines of electric force directed from the bias electrode to the electric charge extraction electrode are changed. The sensitive volume in which the charge is accumulated is changed, and the resolution and sensitivity of the charge extraction electrode can be changed.
[0015]
【Example】
An embodiment of the present invention will be described below with reference to the drawings.
[0016]
FIG. 1 shows a main configuration diagram of an X-ray imaging apparatus according to the present invention.
[0017]
1 is a semiconductor X-ray array detector, 2 is a bias electrode, 3 is an X-ray detector such as a semiconductor X-ray crystal, 4 is a guard electrode that does not detect charges, 5a to 5c are detection electrodes for detecting charges, 6 Is an amplifier, and 7 is a switch as means for controlling the potential of the guard electrode 4.
[0018]
The semiconductor X-ray array detector 1 includes a bias electrode 2, an X-ray detector unit 3, a guard electrode 4, and detection electrodes 5 a to 5 c, and a reverse bias voltage (−V B ) is applied to the bias electrode 2. Each detection electrode is connected to an amplifier 6, and the tip of the amplifier 6 is connected to a waveform shaping circuit, a comparison circuit, a counting circuit, an information processing circuit, etc. as shown in FIG. 6, and image density information is displayed on the CRT. It has come to be. The guard electrode 4 is connected to the switch 7 and one of the contacts of the switch 7 is grounded.
[0019]
When X-rays are incident on the X-ray detector unit 3, a number of electrons corresponding to the energy of the X-rays are generated. The electrons move toward the detection electrodes 5 a to 5 c along the lines of electric force and are detected as charge pulses, but this state is changed by switching the switch 7.
[0020]
FIG. 2 shows the state of electric lines of force (charge drift lines) when both of the two switches 7 are opened. Since the potential of the guard electrode 4 is open, no electric lines of force are generated between the guard electrode 4 and the bias electrode 2, and the electric lines of force are directed toward the detection electrodes 5a and 5c at the periphery of the bias electrode 2.
[0021]
Since the electrons generated in the X-ray detector unit 3 move to the respective detection electrodes along the electric force lines, the larger the range of electric force lines gathered at the respective detection electrodes, the more electrons can be accumulated, Sensitivity is improved because the sensitive volume is expanded.
[0022]
On the other hand, when the sensitive volume is widened, X-rays incident on a wide range are detected by one detection electrode, so that the spatial resolution is lowered.
[0023]
Therefore, the sensitivity of the detection pixels corresponding to the detection electrodes 5a and 5c in the figure is improved, and the spatial resolution is lowered. Further, the resolution and sensitivity of the detection pixel corresponding to the detection electrode 5b are hardly changed.
[0024]
Next, when the switch 7 is switched to the grounded contact point, the guard electrode 4 is grounded, so the state of the electric lines of force at this time is the same as in FIG. The sensitivity of the detection pixels corresponding to the detection electrodes 5a and 5c is lowered and the resolution is improved as compared with the case where is opened.
[0025]
In this way, the spatial resolution and sensitivity of the detection pixel can be easily changed.
[0026]
FIG. 3 shows a main configuration diagram of an X-ray imaging apparatus of another embodiment, and FIGS. 4 and 5 show states of electric lines of force.
[0027]
3, the same components as those in FIG. 1 are denoted by the same reference numerals. A difference from FIG. 1 is that a voltage source 8 is connected to the guard electrode 4 instead of the switch 7, and this is used as means for controlling the potential. The voltage source 8 can continuously change the supply voltage from + V s to −V s .
[0028]
Here, FIG. 4 shows the state of the electric lines of force when the voltage of the voltage source 8 is set to + V s , and electric lines of force are generated from the bias electrode 2 to the guard electrode 4 to reduce the sensitive volume. Therefore, the number of electrons moving to the detection electrodes 5a and 5c decreases, the spatial resolution of the detection pixels corresponding to the detection electrodes 5a and 5c improves, and the sensitivity decreases.
[0029]
On the other hand, FIG. 5 shows the state of the electric lines of force when the voltage of the voltage source 8 is −V s , and no electric lines of force are generated from the bias electrode 2 to the guard electrode 4, increasing the sensitive volume. Therefore, the spatial resolution of the detection pixels corresponding to the detection electrodes 5a and 5c is reduced, and the sensitivity is improved. The spatial resolution and sensitivity of the detection pixel corresponding to the detection electrode 5b hardly change even if the potential of the guard electrode 4 changes.
[0030]
If the voltage of the voltage source 8 is continuously changed, the state of the electric lines of force changes accordingly, so that the spatial resolution and sensitivity of the detection pixel can be changed.
[0031]
In the above embodiment, the potentials of the two guard electrodes 7 are changed in the same direction. However, these may be changed individually, and the detection result of each detection electrode is fed back during X-ray detection, and the guard electrode 7 is fed back. The potential applied to 7 may be optimized. Moreover, it can also comprise so that the electric potential of a guard electrode can be operated from the exterior of an apparatus.
[0032]
Furthermore, in the embodiment described above, since the spatial resolution and sensitivity of the detection pixel corresponding to the detection electrode 5b cannot be changed, the guard electrode and the detection electrode are alternately arranged and the space of the detection pixel corresponding to all the detection electrodes. The resolution and sensitivity may be changed. However, in this case, since the guard electrode is an electrode that does not detect charges, a dead region is generated over a wide range of the semiconductor X-ray array detector when the guard electrode is grounded or at a positive potential.
[0033]
Therefore, the input potential of the amplifier connected to each detection electrode, that is, the potential of the detection electrode may be controlled without using the guard electrode. As an example of this case, there is a method of changing the operating point of each amplifier by individually changing the power supply voltage ± V D supplied to each amplifier 6 as shown in FIG. In this way, as a result, the potentials of the detection electrodes 5a to 5e can be arbitrarily changed, so that the spatial resolution and sensitivity of the detection pixels can be arbitrarily controlled.
[0034]
【The invention's effect】
As described above, according to the X-ray imaging apparatus of the present invention, since the potential of the charge extraction electrode is changed as necessary, the state of the electric lines of force generated between the bias electrode and the charge extraction electrode Changes, and the sensitive volume with respect to the detection pixel can be increased or decreased, so that the spatial resolution and sensitivity can be easily changed without manufacturing a device in which the detection electrode interval is changed.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a configuration of an X-ray imaging apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram showing lines of electric force when the potential of the guard electrode in FIG. 1 is opened.
FIG. 3 is a diagram showing a configuration of an X-ray imaging apparatus according to another embodiment of the present invention.
4 is a diagram showing lines of electric force when a potential of + V s is applied to the guard electrode of FIG. 3;
5 is a diagram showing electric lines of force when a potential of −V s is applied to the guard electrode of FIG. 3;
FIG. 6 is a diagram illustrating a configuration of an X-ray imaging apparatus according to an embodiment that does not use a guard electrode.
FIG. 7 is a diagram illustrating an overall configuration of an X-ray imaging apparatus.
FIG. 8 is a diagram showing a main part of a conventional X-ray imaging apparatus.

Claims (2)

Ｘ線検出部と、このＸ線検出部の一方に形成されたバイアス電極と、他方に形成された複数の電荷取り出し電極とを備え、Ｘ線の入射によりこのＸ線検出部から発生する電荷を検出して画像を形成する装置において、前記電荷取り出し電極間にガード電極を交互に設けると共に、前記ガード電極に可変の電圧を印加する電圧源を設けたことを特徴とするＸ線撮像装置。 An X-ray detection unit, a bias electrode formed on one side of the X-ray detection unit, and a plurality of charge extraction electrodes formed on the other side, charge generated from the X-ray detection unit upon incidence of X-rays In the apparatus for detecting and forming an image, an X-ray imaging apparatus, wherein guard electrodes are alternately provided between the charge extraction electrodes, and a voltage source for applying a variable voltage to the guard electrodes is provided. Ｘ線検出部と、前記Ｘ線検出部の一方に形成されたバイアス電極と、他方に形成された複数の電荷取り出し電極と、それぞれの電荷取り出し電極に接続された増幅器を備え、Ｘ線の入射により前記Ｘ線検出部から発生する電荷を検出して画像を形成する装置において、前記それぞれの増幅器に供給されている電源電圧を個別に変化させて各増幅器の動作点を変化させ、前記複数の電荷取り出し電極の各電位を任意に変更できるようにしたことを特徴とするＸ線撮像装置。An X-ray detection unit, a bias electrode formed on one side of the X-ray detection unit, a plurality of charge extraction electrodes formed on the other side, and an amplifier connected to each of the charge extraction electrodes are provided. In the apparatus for forming an image by detecting charges generated from the X-ray detection unit, the power supply voltage supplied to each amplifier is individually changed to change the operating point of each amplifier, An X-ray imaging apparatus characterized in that each potential of a charge extraction electrode can be arbitrarily changed.
JP23801094A 1994-09-30 1994-09-30 X-ray imaging device Expired - Fee Related JP3732244B2 (en)

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JP4881071B2 (en) * 2006-05-30 2012-02-22 株式会社日立製作所 Radiation detector and radiation imaging apparatus equipped with the same
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