JP3728305B2 - Light emitting diode device using selective growth - Google Patents
Light emitting diode device using selective growth Download PDFInfo
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- JP3728305B2 JP3728305B2 JP2003296612A JP2003296612A JP3728305B2 JP 3728305 B2 JP3728305 B2 JP 3728305B2 JP 2003296612 A JP2003296612 A JP 2003296612A JP 2003296612 A JP2003296612 A JP 2003296612A JP 3728305 B2 JP3728305 B2 JP 3728305B2
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- 229910002601 GaN Inorganic materials 0.000 claims description 60
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 57
- 150000001875 compounds Chemical class 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- -1 silicon dioxide compound Chemical class 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
本発明は一種の発光ダイオード装置に係り、特に、横方向成長技術を応用し、窒化ガリウムを生成させた発光ダイオード装置に関する。 The present invention relates to a kind of light emitting diode device, and more particularly to a light emitting diode device in which gallium nitride is generated by applying a lateral growth technique.
周知の発光ダイオード（ＬＥＤ）或いはレーザーダイオード（ＬＤ）に応用される発光構造の窒化ガリウム系化合物半導体は、通常、サファイヤ基板に成長させることにより達成されるが、窒化ガリウムとサファイヤ基板の格子ミスマッチは約１６％であり、サファイヤ基板上に成長させる窒化ガリウム系化合物半導体の欠陥密度は１平方センチメートルあたり１０9 であり、このため発光装置の信頼度と性能に影響が生じた。 A gallium nitride-based compound semiconductor having a light-emitting structure applied to a well-known light-emitting diode (LED) or laser diode (LD) is usually achieved by growing on a sapphire substrate, but the lattice mismatch between gallium nitride and sapphire substrate is The defect density of the gallium nitride compound semiconductor grown on the sapphire substrate is about 10 9 per square centimeter, which affects the reliability and performance of the light emitting device.
上述の問題に基づき、特許文献１には横方向成長（ＥＬＯ）エピタキシャル法が記載され、それは格子ミスマッチにより引き起こされる縦方向ミスマッチ（基板に垂直な方向）を、横方向成長により、垂直方向の伝播のミスマッチを横方向に導入し、垂直方向の欠陥の密度を改善するものである。 Based on the above-mentioned problem, Patent Document 1 describes a lateral growth (ELO) epitaxial method, in which a vertical mismatch (direction perpendicular to the substrate) caused by a lattice mismatch is propagated in a vertical direction by lateral growth. This is to improve the density of defects in the vertical direction.
このほか、サファイヤ基板と窒化ガリウム系化合物半導体は極めて高い硬度を有するため、ダイシングしてダイを形成する時、ダイヤモンドカッタで切断しにくく、良好な形状のダイを獲得しにくい。このため、ウエハを８５μｍの厚さにまで研磨し、且つウエハ行程中に隔離（ｉｓｏｌａｔｉｏｎ）工程を加入して、ダイシングの歩留りを高める必要がある。周知の技術はこのように余分に隔離工程によるダイシング歩留りを改善が必要である問題を有している。 In addition, since the sapphire substrate and the gallium nitride compound semiconductor have extremely high hardness, when forming a die by dicing, it is difficult to cut with a diamond cutter and it is difficult to obtain a die having a good shape. Therefore, it is necessary to increase the dicing yield by polishing the wafer to a thickness of 85 μm and adding an isolation process during the wafer process. The known technique has a problem that it is necessary to improve the dicing yield due to the isolation process.
上述の問題を鑑み、本発明は横方向成長を利用して製作した窒化ガリウム発光構造を提供するものである。 In view of the above problems, the present invention provides a gallium nitride light emitting structure fabricated using lateral growth.
本発明の主要な目的は、エピタキシャル成長した発光ダイオード構造にあって、バッファ層をパターニングした二酸化けい素層の表面上に形成し、余分に隔離工程を必要とせずに、直接成長ガスとエッチングガスの混合比の変化を利用し、横方向成長を行ない、パターンに符合するバッファ層を生成させることにある。 The main object of the present invention is an epitaxially grown light emitting diode structure, in which a buffer layer is formed on the surface of a patterned silicon dioxide layer, and a direct growth gas and an etching gas can be formed without an extra isolation step. Using the change in the mixing ratio, lateral growth is performed to generate a buffer layer that matches the pattern.
本発明のもう一つの目的は、横方向成長技術により、発光ダイオード装置の製造過程を簡易化し、並びに周知の技術に較べて寄生キャパシタンスを低くし、並びに発光効率を明らかに向上できるようにすることにある。 Another object of the present invention is to simplify the manufacturing process of the light emitting diode device by the lateral growth technology, to lower the parasitic capacitance as compared with the known technology, and to clearly improve the luminous efficiency. It is in.
請求項１の発明は、選択成長を応用した発光ダイオード装置において、
導電性を具備しない基板と、
該基板の上に堆積され、パターン形成後に、相互に不隣接の複数の独立したブロックを形成し、この複数のブロックがそれぞれ横方向の幅を具え、且つ複数のブロック相互間にギャップがあり、該横方向の幅が大幅のものと小幅のものとに分けられ、大幅が３０μｍ以上とされ、小幅が５μｍ以下とされ、該ギャップが８から１２μｍの間とされ、二酸化けい素化合物で組成された酸化層と、
横方向成長技術で小幅の横方向の幅を具えた相互に不隣接の複数の酸化層の上に堆積されて連接されて一体とされ、その材料が窒化ガリウム系ＩＩＩ−Ｖ族化合物とされるバッファ層と、
該バッファ層の上に形成されたｎ型窒化ガリウム層と、
該ｎ型窒化ガリウム層の上に形成されて窒化ガリウム系ＩＩＩ−Ｖ族化合物を主成分とする活性層と、
該活性層の上に形成されたｐ型窒化ガリウム層と、
ｎ型窒化ガリウム層上に位置するｎ型電極形成領域の上に形成され、該ｎ型電極形成領域がｐ型窒化ガリウム層、活性層及びｎ型窒化ガリウム層をエッチングした後にｎ型窒化ガリウム層を露出させて得られ、チタン／アルミニウムを該ｎ型窒化ガリウム層表面に堆積させることにより形成されたｎ型オームコンタクト電極と、
該ｐ型窒化ガリウム層上に形成され、その材料がニッケル／金ベリリウムとされ、厚さが５０から２００Åの間とされるｐ型オームコンタクト電極と、
該ｐ型オームコンタクト電極と該ｎ型オームコンタクト電極の上に形成され、チタン／白金／アルミニウム／チタン／金の５層からなる多層構造とされて、厚さが３μｍから１μｍの間とされる複数のボンディングパッドと、
を具えたことを特徴とする、選択成長を応用した発光ダイオード装置としている。
請求項２の発明は、請求項１記載の選択成長を応用した発光ダイオード装置において、横方向成長を、水素ガス、アンモニアガス、及びトリメチルガリウムの比率を調整して行なうことを特徴とする、選択成長を応用した発光ダイオード装置としている。
請求項３の発明は、請求項１記載の選択成長を応用した発光ダイオード装置において、ボンディングパッドの厚さが２μｍとされたことを特徴とする、選択成長を応用した発光ダイオード装置としている。
請求項４の発明は、請求項１記載の選択成長を応用した発光ダイオード装置において、ｐ型オームコンタクト電極の厚さが１００Åとされたことを特徴とする、選択成長を応用した発光ダイオード装置としている。
請求項５の発明は、請求項１記載の選択成長を応用した発光ダイオード装置において、ギャップが１０μｍとされたことを特徴とする、選択成長を応用した発光ダイオード装置としている。
請求項６の発明は、請求項１記載の選択成長を応用した発光ダイオード装置において、ｎ型窒化ガリウム層の材料がシリコンドープの窒化ガリウム系ＩＩＩ−Ｖ族化合物とされたことを特徴とする、選択成長を応用した発光ダイオード装置としている。
請求項７の発明は、請求項１記載の選択成長を応用した発光ダイオード装置において、ｐ型窒化ガリウム層の材料がマグネシウムドープの窒化ガリウム系ＩＩＩ−Ｖ族化合物とされたことを特徴とする、選択成長を応用した発光ダイオード装置としている。
The invention of claim 1 is a light emitting diode device using selective growth,
A substrate without electrical conductivity;
Deposited on the substrate, and after patterning, forms a plurality of independent blocks that are non-adjacent to each other, each of the plurality of blocks having a lateral width, and there is a gap between the plurality of blocks; The lateral width is divided into a large width and a small width, the large width is 30 μm or more, the small width is 5 μm or less, the gap is between 8 and 12 μm, and it is composed of a silicon dioxide compound. An oxidized layer,
A lateral growth technique is used to deposit and connect together a plurality of non-adjacent oxide layers having a small lateral width, and the material is a gallium nitride III-V compound. A buffer layer,
An n-type gallium nitride layer formed on the buffer layer;
An active layer formed on the n-type gallium nitride layer and mainly composed of a gallium nitride III-V compound;
A p-type gallium nitride layer formed on the active layer;
An n-type gallium nitride layer is formed on the n-type electrode formation region located on the n-type gallium nitride layer, and the n-type electrode formation region etches the p-type gallium nitride layer, the active layer, and the n-type gallium nitride layer. An n-type ohmic contact electrode formed by depositing titanium / aluminum on the surface of the n-type gallium nitride layer,
A p-type ohmic contact electrode formed on the p-type gallium nitride layer, the material of which is nickel / gold beryllium, and a thickness of between 50 and 200 mm;
Formed on the p-type ohmic contact electrode and the n-type ohmic contact electrode, a multi-layer structure consisting of five layers of titanium / platinum / aluminum / titanium / gold is formed with a thickness of between 3 μm and 1 μm. Multiple bonding pads,
The light-emitting diode device applying selective growth is characterized by comprising:
According to a second aspect of the present invention, in the light emitting diode device applying the selective growth according to the first aspect, the lateral growth is performed by adjusting the ratio of hydrogen gas, ammonia gas, and trimethylgallium. It is a light emitting diode device applying growth.
According to a third aspect of the present invention, there is provided a light emitting diode device to which selective growth is applied, wherein the bonding pad has a thickness of 2 μm.
According to a fourth aspect of the present invention, there is provided a light emitting diode device to which selective growth is applied, wherein the thickness of the p-type ohmic contact electrode is 100 mm. Yes.
According to a fifth aspect of the present invention, there is provided a light emitting diode device to which selective growth is applied, wherein the gap is set to 10 μm.
The invention of claim 6 is the light emitting diode device applying the selective growth according to claim 1, wherein the material of the n-type gallium nitride layer is a silicon-doped gallium nitride III-V compound. The light emitting diode device is applied with selective growth.
The invention of claim 7 is a light emitting diode device applying selective growth according to claim 1, characterized in that the material of the p-type gallium nitride layer is a magnesium-doped gallium nitride III-V compound. The light emitting diode device is applied with selective growth.
本発明は、エピタキシャル成長した発光ダイオード構造にあって、バッファ層をパターニングした二酸化けい素層の表面上に形成し、余分に隔離工程を必要とせずに、直接成長ガスとエッチングガスの混合比の変化を利用し、横方向成長を行ない、パターンに符合するバッファ層を生成させている。 The present invention is an epitaxially grown light emitting diode structure in which a buffer layer is formed on the surface of a patterned silicon dioxide layer, and a change in the mixing ratio of the growth gas and the etching gas is directly performed without requiring an extra isolation step. Using this, lateral growth is performed to generate a buffer layer that matches the pattern.
本発明は、横方向成長技術により、発光ダイオード装置の製造過程を簡易化し、並びに周知の技術に較べて寄生キャパシタンスを低くし、並びに発光効率を明らかに向上できるようにしている。 The present invention simplifies the manufacturing process of the light emitting diode device by the lateral growth technology, lowers the parasitic capacitance as compared with the known technology, and clearly improves the light emission efficiency.
図１は本発明の実施例による選択成長を応用した発光ダイオード装置の酸化層表示図である。基板１が金属有機化学気相成長（ＭＯＣＶＤ）システム中に置かれ、基板１はサファイヤ（Ｓａｐｐｈｉｒｅ）、炭化けい素（ＳｉＣ）、シリコン（Ｓｉ）、ガリウム砒素（ＧａＡｓ）、アルミン酸リチウム（ＬｉＡｌＯ2 ）、ガリウム酸リチウム（ＬｉＧａＯ2 ）及び窒化アルミニウム（ＡｌＮ）のいずれかとされる。９２０℃の水蒸気雰囲気中で、二酸化けい素化合物の薄膜を堆積させて酸化層２とした後、二酸化けい素薄膜のパターンを製作し、複数の不隣接の独立したブロック２０、２２を形成する。複数のブロック２０、２２相互間にはギャップａがあり、且つブロック２０、２２はそれぞれ横方向の幅ｂ、ｃを具え、横方向の幅ｂ、ｃは小幅と大幅に区分され、大幅の横方向の幅ｃは３０μｍ以上とされ、小幅の横方向の幅ｄは５μｍ以下とされ、ギャップａは８から１２μｍの間とされ、好ましくは１０μｍとされる。
FIG. 1 is an oxide layer display diagram of a light emitting diode device using selective growth according to an embodiment of the present invention. The substrate 1 is placed in a metal organic chemical vapor deposition (MOCVD) system, and the substrate 1 is made of sapphire, silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), lithium aluminate (LiAlO 2). ), Lithium gallate (LiGaO 2 ), or aluminum nitride (AlN). After depositing a silicon dioxide compound thin film in the water vapor atmosphere at 920 ° C. to form the oxide layer 2, a silicon dioxide thin film pattern is fabricated to form a plurality of non-adjacent
図２は本発明の実施例の、選択成長を応用した発光ダイオード装置のバッファ層、ｎ型窒化ガリウム層、活性層、及びｐ型窒化ガリウム層表示図である。横方向成長技術（ｌａｔｅｒａｌ ｇｒｏｗｔｈ）に選択成長を行なうのに好ましい窒化ガリウム系化合物は、ガス混合物を利用して低圧下で成長し、水素ガス（Ｈ2 ）、アンモニアガス（ＮＨ3 ）、及びトリメチルガリウム（Ｔｒｉｍｅｔｈｙｌ Ｇａｌｌｉｕｍ；ＴＭＧ）の比例を調整し、その特殊な混合比の変化により選択比に影響を与え、酸化層２の表面に成長した小ブロックの窒化ガリウムをエッチングにより排除する。酸化層２中の独立したブロック２０の横方向の幅ｂは比較的小さく、ゆえに小幅の横方向の幅ｂを具えた複数の独立したブロック２０を具えた酸化層２の上に一体に連接されたバッファ層３が堆積により形成される。大幅の横方向の幅ｃの不隣接の独立した複数のブロック２２の酸化層２の上では、ブロック２２の表面の核形成が横方向成長技術の抑制を受けるため窒化ガリウム系化合物のバッファ層３は形成されない。その後、バッファ層３の上に順にｎ型窒化ガリウム層４、活性層５、及びｐ型窒化ガリウム層６を成長させる。ｎ型窒化ガリウム層４材料はシリコンドープの窒化ガリウム系ＩＩＩ−Ｖ族化合物、活性層５は窒化ガリウム系ＩＩＩ−Ｖ族化合物、ｐ型窒化ガリウム層６の材料はマグネシウムドープの窒化ガリウム系ＩＩＩ−Ｖ族化合物とされる。
FIG. 2 is a display diagram of a buffer layer, an n-type gallium nitride layer, an active layer, and a p-type gallium nitride layer of a light emitting diode device using selective growth according to an embodiment of the present invention. Preferred gallium nitride-based compounds for selective growth in lateral growth techniques are grown under low pressure using a gas mixture to produce hydrogen gas (H 2 ), ammonia gas (NH 3 ), and trimethyl. The proportionality of gallium (Trimethyl Gallium; TMG) is adjusted, the change in the special mixing ratio affects the selection ratio, and small blocks of gallium nitride grown on the surface of the oxide layer 2 are removed by etching. The lateral width b of the
図３は本発明の実施例の、選択成長を応用した発光ダイオード装置のエッチング部分のｐ型窒化ガリウム層、活性層、及びｎ型窒化ガリウム層の表示図である。図２のｐ型窒化ガリウム層６形成後、ドライエッチング技術により、一部のｐ型窒化ガリウム層６、活性層５及びｎ型窒化ガリウム層４をエッチングし、ｎ型窒化ガリウム層４に露出領域を形成し、この露出領域表面にチタン／アルミニウム（Ｔｉ／Ａｌ）を堆積させ、ｎ型オームコンタクト電極７を形成する。 FIG. 3 is a display diagram of a p-type gallium nitride layer, an active layer, and an n-type gallium nitride layer in an etched portion of a light emitting diode device to which selective growth is applied according to an embodiment of the present invention. After the p-type gallium nitride layer 6 shown in FIG. 2 is formed, a part of the p-type gallium nitride layer 6, the active layer 5, and the n-type gallium nitride layer 4 are etched by a dry etching technique. Then, titanium / aluminum (Ti / Al) is deposited on the exposed region surface to form an n-type ohmic contact electrode 7.
図４は本発明の実施例の、選択成長を応用した発光ダイオード装置のｐ型オームコンタクト電極の表示図である。ｐ型オームコンタクト電極８はｐ型窒化ガリウム層６に形成され、発光ダイオード装置に良好な発光効率を維持させ、通常、ｐ型オームコンタクト電極８は極めて薄く、ニッケル／金ベリリウム（Ｎｉ／ＡｕＢｅ）で形成される。ｐ型オームコンタクト電極８の厚さは５０から２００Åの間とされ、好ましくは１００Åとされる。 FIG. 4 is a display diagram of a p-type ohmic contact electrode of a light emitting diode device to which selective growth is applied according to an embodiment of the present invention. The p-type ohmic contact electrode 8 is formed on the p-type gallium nitride layer 6 and allows the light-emitting diode device to maintain good luminous efficiency. Usually, the p-type ohmic contact electrode 8 is extremely thin and nickel / gold beryllium (Ni / AuBe). Formed with. The thickness of the p-type ohmic contact electrode 8 is between 50 and 200 mm, preferably 100 mm.
図５は本発明の実施例の、選択成長を応用した発光ダイオード装置のボンディングパッドの表示図である。複数のボンディングパッド９が、ｎ型オームコンタクト電極７とｐ型オームコンタクト電極８の上に形成されて、導線との電気的接続形成に供され、該ボンディングパッド９は多層構造とされ、この多層構造は、チタン／白金／アルミニウム／チタン／金（Ｔｉ／Ｐｔ／Ａｌ／Ｔｉ／Ａｕ）の５層構造とされ、厚さは３μｍから１μｍの間とされ、好ましくは２μｍとされる。以上の工程により本発明のダイ構造が完成する。 FIG. 5 is a display diagram of bonding pads of a light emitting diode device to which selective growth is applied according to an embodiment of the present invention. A plurality of bonding pads 9 are formed on the n-type ohmic contact electrode 7 and the p-type ohmic contact electrode 8, and are used for forming an electrical connection with a conductive wire. The bonding pad 9 has a multilayer structure. The structure is a five-layer structure of titanium / platinum / aluminum / titanium / gold (Ti / Pt / Al / Ti / Au), and the thickness is between 3 μm and 1 μm, preferably 2 μm. The die structure of the present invention is completed through the above steps.
図６は本発明の実施例の選択成長を応用した発光ダイオード装置の発光効率を従来の技術のものと比較した比較図である。注入電流（単位ミリアンペア）の強度を変化させて、それに対応する光出力パワー（単位ａｕ）を描き、さらに点を結んで線とした図であり、この図から本発明の実施例が周知の技術よりも優れた発光効率を有していることが分かる。 FIG. 6 is a comparative diagram comparing the light emission efficiency of the light emitting diode device to which the selective growth of the embodiment of the present invention is applied with that of the prior art. FIG. 2 is a diagram in which the intensity of an injection current (unit milliampere) is changed, the optical output power (unit au) corresponding thereto is drawn, and further, dots are connected to form a line. It turns out that it has the luminous efficiency superior to.
以上の実施例は本発明の実施範囲を限定するものではなく、本発明に基づきなし得る細部の修飾或いは改変は、いずれも本発明の請求範囲に属するものとする。 The above embodiments do not limit the scope of the present invention, and any modification or alteration in detail that can be made based on the present invention shall belong to the claims of the present invention.
１ 基板
２ 酸化層
２０ ブロック
２２ ブロック
ａ ギャップ
ｂ 横方向の幅
ｃ 横方向の幅
３ バッファ層
４ ｎ型窒化ガリウム層
５ 活性層
６ ｐ型窒化ガリウム層
７ ｎ型オームコンタクト電極
８ ｐ型オームコンタクト電極
９ ボンディングパッド
1 substrate 2
Claims (7)
導電性を具備しない基板と、
該基板の上に堆積され、パターン形成後に、相互に不隣接の複数の独立したブロックを形成し、この複数のブロックがそれぞれ横方向の幅を具え、且つ複数のブロック相互間にギャップがあり、該横方向の幅が大幅のものと小幅のものとに分けられ、大幅が３０μｍ以上とされ、小幅が５μｍ以下とされ、該ギャップが８から１２μｍの間とされ、二酸化けい素化合物で組成された酸化層と、
横方向成長技術で小幅の横方向の幅を具えた相互に不隣接の複数の酸化層の上に堆積されて連接されて一体とされ、その材料が窒化ガリウム系ＩＩＩ−Ｖ族化合物とされるバッファ層と、
該バッファ層の上に形成されたｎ型窒化ガリウム層と、
該ｎ型窒化ガリウム層の上に形成されて窒化ガリウム系ＩＩＩ−Ｖ族化合物を主成分とする活性層と、
該活性層の上に形成されたｐ型窒化ガリウム層と、
ｎ型窒化ガリウム層上に位置するｎ型電極形成領域の上に形成され、該ｎ型電極形成領域がｐ型窒化ガリウム層、活性層及びｎ型窒化ガリウム層をエッチングした後にｎ型窒化ガリウム層を露出させて得られ、チタン／アルミニウムを該ｎ型窒化ガリウム層表面に堆積させることにより形成されたｎ型オームコンタクト電極と、
該ｐ型窒化ガリウム層上に形成され、その材料がニッケル／金ベリリウムとされ、厚さが５０から２００Åの間とされるｐ型オームコンタクト電極と、
該ｐ型オームコンタクト電極と該ｎ型オームコンタクト電極の上に形成され、チタン／白金／アルミニウム／チタン／金の５層からなる多層構造とされて、厚さが３μｍから１μｍの間とされる複数のボンディングパッドと、
を具えたことを特徴とする、選択成長を応用した発光ダイオード装置。 In light-emitting diode devices applying selective growth,
A substrate without electrical conductivity;
Deposited on the substrate, and after patterning, forms a plurality of independent blocks that are non-adjacent to each other, each of the plurality of blocks having a lateral width, and there is a gap between the plurality of blocks; The lateral width is divided into a large width and a small width, the large width is 30 μm or more, the small width is 5 μm or less, the gap is between 8 and 12 μm, and it is composed of a silicon dioxide compound. An oxidized layer,
A lateral growth technique is used to deposit and connect together a plurality of non-adjacent oxide layers having a small lateral width, and the material is a gallium nitride III-V compound. A buffer layer,
An n-type gallium nitride layer formed on the buffer layer;
An active layer formed on the n-type gallium nitride layer and mainly composed of a gallium nitride III-V compound;
A p-type gallium nitride layer formed on the active layer;
An n-type gallium nitride layer is formed on the n-type electrode formation region located on the n-type gallium nitride layer, and the n-type electrode formation region etches the p-type gallium nitride layer, the active layer, and the n-type gallium nitride layer. An n-type ohmic contact electrode formed by depositing titanium / aluminum on the surface of the n-type gallium nitride layer,
A p-type ohmic contact electrode formed on the p-type gallium nitride layer, the material of which is nickel / gold beryllium, and a thickness of between 50 and 200 mm;
Formed on the p-type ohmic contact electrode and the n-type ohmic contact electrode, a multi-layer structure consisting of five layers of titanium / platinum / aluminum / titanium / gold is formed with a thickness of between 3 μm and 1 μm. Multiple bonding pads,
A light emitting diode device using selective growth, characterized by comprising:
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