JP3703969B2 - Electronic circuit device and manufacturing method thereof - Google Patents

Electronic circuit device and manufacturing method thereof Download PDF

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Publication number
JP3703969B2
JP3703969B2 JP17490498A JP17490498A JP3703969B2 JP 3703969 B2 JP3703969 B2 JP 3703969B2 JP 17490498 A JP17490498 A JP 17490498A JP 17490498 A JP17490498 A JP 17490498A JP 3703969 B2 JP3703969 B2 JP 3703969B2
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semiconductor element
electronic circuit
circuit device
wiring conductor
outer casing
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JP2000012743A (en
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一博 登
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

PROBLEM TO BE SOLVED: To obtain sure electromagnetic shielding effect by reliably and electrically connecting a semiconductor element to a wiring conductor, reducing a space for electrically connecting them, and regulating the spread of a sealing resin. SOLUTION: A semiconductor element 1 where a metal heat sink 4 is allowed to adhere to a rear surface is fitted to nearly the central part of an outer enclosure with one surface is open in a nearly box type, the outside is covered with a conductive part 7, and the outer enclosure consists of resin moldings 7 and 8 with a plurality of wiring conductors 6. In the semiconductor element 1, its salient electrode 2 is jointed to an electrode part 6a which provided at each end of the wiring conductors 6, and each of the other end of the wiring conductors 6 is led to an area near the end part of the outer enclosure for constituting a connector pin. A sealing resin 5 is filled around the semiconductor element 1, and a partition wall 8a for preventing the sealing resin from flowing to the part of a connector 9 is provided.

Description

【０００１】
【発明の属する技術分野】
本発明は、樹脂成形品からなる外筐に半導体素子を内蔵した電子回路装置、特に電力用の電子回路装置およびその製造方法に関するものである。
【０００２】
【従来の技術】
近年、電気製品の軽薄短小化は時代の流れとなっており、この動向に対応して電気製品の電源回路も小型軽量化、高放熱化、低ノイズ化等が求められている。
図４は、この種の電源回路等に用いられる電力用の電子回路装置を示したもので、高放熱を確保するために、アルミ基板１２の上に絶縁性の樹脂接着剤１３により接着された銅箔をエッチングして配線導体（独立した導体ランドも含む）６を形成した、いわゆる金属基板が使用されている。放熱を必要とする半導体素子１は、回路形成面とは反対側の面が、配線導体６の一つに、空気の泡のないクリーム半田１４により接合され、回路形成面の電極とアルミ基板１２上の他の配線導体６との間がアルミ線１５のワイヤボンディングで接続される。そして、半導体素子１を外界からシールしかつアルミ線１５を機械的に保護するために、絶縁性の封止樹脂５で被覆する。さらに、別の配線導体６上にクリーム半田１４等を用いてピン９ａを有するコネクタ９や、半導体素子１の装着部を覆うシールドケース１６を接合する。このようにして、放熱性と電磁シールド性を持たせたコネクタ付き電子回路装置が構成されている。
【０００３】
【発明が解決しようとする課題】
しかしながら、上記のような従来の構成では、半導体素子１の電極数が多くなると、アルミ線１５を引き出す配線導体６を確保するためのスペースが大きくなるという問題があった。
【０００４】
また、アルミ基板１２に配線導体６を接着する樹脂接着剤１３は剛性が小さいため、半導体素子１と配線導体６とを接続する超音波によるワイヤボンディングの際、配線導体６と樹脂接着剤１３との間で超音波エネルギーが逃げてしまい、接合不良が発生し易い。
【０００５】
また、半導体素子１とアルミ線１５を保護するための封止樹脂５は、液体の状態で塗布するが、粘度のばらつきにより広がる面積が異なり、他の部品を接合する電極に被って、半田付け不良が発生するという問題もあった。
【０００６】
さらに、半導体素子１はシールドケース１６で覆われているが、コネクタ９の部分は露出されているため、コネクタ部分より電磁ノイズが入り込み、半導体素子１が誤動作するという問題もあった。
【０００７】
本発明は、上記従来技術の問題点を解決するもので、半導体素子と配線導体との信頼性の高い電気的接続を得るとともに、その電気的接続のためのスペースを小さくして小型化を図り、また、封止樹脂を適切な範囲に塗布するとともに、確実な電磁シールド効果を得る構造を備えた電子回路装置及びその製造方法を提供することを目的とする。
【０００８】
【課題を解決するための手段】
上記の目的を達成するために、本発明の電子回路装置は、一面が開口した略箱型で、複数の配線導体が配設された絶縁性樹脂成形部と、該絶縁性樹脂成形部の外側を一体的に覆う導電性樹脂成形部とからなる外筐と、該外筐の内部の略中央部に位置する前記配線導体の各一端に設けられた電極部に突起電極が接合された半導体素子と、該半導体素子の背面に接着されたヒートシンクと、前記半導体素子の周囲に充填された封止樹脂とからなることを特徴とするものである。
【０００９】
また、配線導体の各他端は、外筐の端部付近に導出されて、コネクタピンを構成している。
【００１０】
また、外筐は、半導体素子装着部とコネクタピン導出部とを仕切り半導体素子の周囲に充填された封止樹脂のコネクタピン導出部側への流出を防止する導電性樹脂成形部からなる仕切壁が設けられている。
【００１１】
また、ヒートシンクは金属からなり、半導体素子及び仕切壁に導電性接着剤で接合されており、半導体素子が接着される面とは反対側の面には複数の溝が形設されている。
【００１２】
さらに、本発明の電子回路装置の製造方法は、銅板に配線パターンを形成し、所定の形状に折曲加工する工程と、加工された配線導体を配置した絶縁性樹脂成形部を形成する工程と、絶縁性樹脂成形部の外側に導電性樹脂成形部を一体的に形成して外筐を構成する工程と、突起電極を有する半導体素子の背面にヒートシンクを導電性接着剤で接着する工程と、前記外筐の半導体素子装着部に所定量の封止樹脂を注入し、前記半導体素子をその封止樹脂中に押し込み、前記突起電極を前記配線導体の電極部に超音波溶接する工程とからなることを特徴とするものである。
【００１３】
上記構成の電子回路装置及びその製造方法によれば、剛性の大きい樹脂成形品からなる外筐に確実に固定された配線導体に、突起電極を有する半導体素子をフェースダウン方式で超音波溶接により接合するので、超音波エネルギーを効率よく吸収して、確実な接合が達成されるとともに、電極接合に要するスペースが小さくて済む。また、外筐の外部が導電部で覆われ、かつ半導体素子の背面には金属からなるヒートシンクが接着されて外筐の開口部の大部分を覆っているので確実な電磁シールド効果を得ることができる。さらに、半導体素子の装着部の周囲には仕切壁が設けられているので、半導体素子の周囲に充填される封止樹脂はコネクタピン側へ流出することはない。
【００１４】
【発明の実施の形態】
以下、本発明の実施の形態について、図面を参照しながら詳細に説明する。
【００１５】
図１は、本発明の一実施の形態における電子回路装置の構成を示したもので、１は半導体素子、２は半導体素子１の電極パッド部に設けた突起電極（バンプ）、３は導電性接着剤、４はアルミニウムからなるヒートシンクで、半導体素子１と導電性接着剤３により接着され、その反対側の面には複数の溝４ａが形設されている。５は半導体素子１の周囲に充填された封止樹脂である。
【００１６】
６は配線導体であり、絶縁性樹脂成形部７に配設されている。８は絶縁性樹脂成形部７の外側に一体的に形成された導電性樹脂成形部である。絶縁性樹脂成形部７及び導電性樹脂成形部８は、一面が開口した略箱型の外筐を構成している。外筐の内部の中央部に配線導体６の各一端部を位置させ、半導体素子１の突起電極２を接合する電極部６ａを形成している。配線導体６の各他端部は、外筐の端部付近に導出し、コネクタピン６ｂを形成している。半導体素子装着部とコネクタピン導出部との間には、導電性樹脂成形部からなる仕切壁８ａを設けており、これにより半導体素子１の周囲に充填する封止樹脂５がコネクタピン６ｂ側へ流出するのを防止するようにしている。なお、仕切壁８ａとヒートシンク４との間は導電性接着剤３でつながれており、電気的に導通している。
【００１７】
次に、本実施の形態における電子回路装置の製造方法を、図２を参照して説明する。まず工程(1)として、銅板あるいは銅箔をエッチングまたはプレス加工して配線導体６の回路パターンを形成する。工程(2)では、回路パターンが形成された配線導体６を所定の形状に折曲加工する。なお、１０は配線導体６がばらばらに分解しないように互いにつないでおくつなぎ部で、後で切断する。
【００１８】
工程(3)では、折曲加工された配線導体６を一次成形金型を用いて絶縁性樹脂で成形し、絶縁性樹脂成形部７を形成する。ここで、各配線導体６は絶縁性樹脂成形部７により固着されたので、工程(4)として、つなぎ部１０を切断する。さらに、工程(5)として、絶縁性樹脂成形部７の外部を一体的に覆って電磁シールドを形成するとともにコネクタ９部を形成するために、二次成形金型を用いて導電性樹脂による導電性樹脂成形部８を形成する。この導電性樹脂成形部８は配線導体６とは接触しない。次いで、工程(6)では、半導体素子１の装着部に液状の封止樹脂５を所定量注入する。
【００１９】
一方、工程(7)として、実装する半導体素子１を用意し、工程(8)で、半導体素子１の電極パッド部に突起電極（バンプ）２を形成する。さらに、工程(9)として、半導体素子１の回路形成面とは反対側の面（背面という）にアルミニウム製のヒートシンク４を導電性接着剤３で接着する。接着する際は、接着剤中の気泡が問題となるため、減圧雰囲気中で脱泡し、接着及び硬化を実施する。
【００２０】
次に、工程(10)として、工程(6)で外筐に注入した封止樹脂５の中に、ヒートシンク４の部分を超音波ヘッドが吸着した半導体素子１を位置合わせして押し込み、超音波を印加しながら突起電極２と配線導体６の電極部６ａとを圧接する。このとき、液状の封止樹脂５は押し込まれた半導体素子１により排除され、突起電極２と配線導体６間の樹脂も排除されて、金属間結合が実現する。封止樹脂５は加熱硬化される。最後に、ヒートシンク４と仕切壁８ａとの間の導通を確保するため導電性接着剤３が塗布、硬化され、図１に示す電子回路装置が完成する。
【００２１】
先にも説明したように、半導体素子１の突起電極２と配線導体６との接合には超音波溶接が適用される。したがって、配線導体６が剛性の大きい支持体にしっかり固定されていなければならない。特に、超音波の印加によって突起電極２が微細振動をするが、それにつれて同一方向に配線導体６が振動しては超音波エネルギーの損失が生ずることになる。
【００２２】
樹脂成形品に組み込まれた配線導体６は、機械的に堅固に固着されてはいるが、さらに、図３に示したように、超音波の印加方向１１に対して直角方向に、配線導体６に凸部１２や凹部１３、曲げ部１４等を形成しておくことにより、配線導体６は絶縁性樹脂成形部７に、より堅固に固着されることになる。
【００２３】
また、超音波ヘッドが吸着するヒートシンク４に形成した、放熱面積を広くするための複数の溝４ａも、超音波の印加方向１１に対して直角方向に形成することにより、ヘッドとの滑りをなくし、接合部に対して超音波エネルギーを効率よく伝達することができる。
【００２４】
【発明の効果】
以上説明したように、本発明によれば、剛性の大きい樹脂成形品からなる外筐に確実に固定された配線導体に、突起電極を有する半導体素子をフェースダウン方式で超音波溶接により接合するので、超音波エネルギーを効率よく伝達して確実な接合を達成することができ、しかも、電極接合に要するスペースが小さくて済むので、小型化を図ることができる。また、外筐の外部が導電部で覆われ、かつ半導体素子の背面には金属からなるヒートシンクが接着されて外筐の開口部の大部分を覆っているので確実な電磁シールド効果を得ることができる。さらに、半導体素子の装着部の周囲には仕切壁が設けられているので、半導体素子の周囲に充填される封止樹脂はコネクタピン側へ流出することはないなど、種々の効果を奏する。
【図面の簡単な説明】
【図１】本発明の一実施の形態における電子回路装置の断面図及び平面図
【図２】本発明の一実施の形態における電子回路装置の製造方法を示す工程断面図
【図３】本発明の樹脂成形品に組み込まれて堅固に固着される配線導体の形状例を示す図
【図４】従来の電子回路装置の断面図
【符号の説明】
１ 半導体素子
２ 突起電極
３ 導電性接着剤
４ ヒートシンク
５ 封止樹脂
６ 配線導体
６ａ 電極部
６ｂ コネクタピン
７ 絶縁性樹脂成形部
８ 導電性樹脂成形部
８ａ 仕切壁
９ コネクタ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic circuit device in which a semiconductor element is built in an outer casing made of a resin molded product, and more particularly to an electronic circuit device for electric power and a manufacturing method thereof.
[0002]
[Prior art]
In recent years, the miniaturization of electrical products has become a trend of the times, and in response to this trend, power supply circuits of electrical products are required to be smaller and lighter, higher heat dissipation, lower noise, and the like.
FIG. 4 shows an electronic circuit device for electric power used in this type of power supply circuit and the like, which is adhered on an aluminum substrate 12 with an insulating resin adhesive 13 in order to ensure high heat dissipation. A so-called metal substrate in which a wiring conductor (including independent conductor lands) 6 is formed by etching a copper foil is used. In the semiconductor element 1 that requires heat dissipation, the surface opposite to the circuit formation surface is joined to one of the wiring conductors 6 by the cream solder 14 without air bubbles, and the electrode on the circuit formation surface and the aluminum substrate 12. The other upper wiring conductor 6 is connected by aluminum wire 15 wire bonding. Then, in order to seal the semiconductor element 1 from the outside and mechanically protect the aluminum wire 15, the semiconductor element 1 is covered with an insulating sealing resin 5. Further, the connector 9 having the pins 9 a and the shield case 16 that covers the mounting portion of the semiconductor element 1 are joined to the other wiring conductor 6 using cream solder 14 or the like. In this way, an electronic circuit device with a connector having heat dissipation and electromagnetic shielding properties is configured.
[0003]
[Problems to be solved by the invention]
However, the conventional configuration as described above has a problem that as the number of electrodes of the semiconductor element 1 increases, a space for securing the wiring conductor 6 through which the aluminum wire 15 is drawn increases.
[0004]
In addition, since the resin adhesive 13 that bonds the wiring conductor 6 to the aluminum substrate 12 has low rigidity, the wiring conductor 6 and the resin adhesive 13 are bonded to each other at the time of wire bonding by ultrasonic waves that connect the semiconductor element 1 and the wiring conductor 6. Ultrasonic energy escapes between them, and bonding failure tends to occur.
[0005]
In addition, the sealing resin 5 for protecting the semiconductor element 1 and the aluminum wire 15 is applied in a liquid state, but the spread area is different due to the variation in viscosity. There was also a problem that defects occurred.
[0006]
Furthermore, although the semiconductor element 1 is covered with the shield case 16, since the connector 9 is exposed, electromagnetic noise enters from the connector and the semiconductor element 1 malfunctions.
[0007]
The present invention solves the above-mentioned problems of the prior art, and obtains a highly reliable electrical connection between a semiconductor element and a wiring conductor, and reduces the space for the electrical connection to reduce the size. Another object of the present invention is to provide an electronic circuit device having a structure in which a sealing resin is applied in an appropriate range and a reliable electromagnetic shielding effect is obtained, and a manufacturing method thereof.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, an electronic circuit device according to the present invention is a substantially box-shaped opening having one surface, an insulating resin molded portion provided with a plurality of wiring conductors, and an outer side of the insulating resin molded portion. A semiconductor element in which a protruding electrode is joined to an electrode portion provided at each end of the wiring conductor located at a substantially central portion inside the outer casing, and a conductive resin molding portion that integrally covers And a heat sink bonded to the back surface of the semiconductor element, and a sealing resin filled around the semiconductor element.
[0009]
Also, each other end of the wiring conductor is led out near the end of the outer casing to constitute a connector pin.
[0010]
The outer casing is made of a semiconductor element mounting portion and the connector pin deriving portion and a conductive resin molded part that to prevent the outflow of the connector pin derivation portion side of the filled sealing resin around the partition semiconductor element A partition wall is provided.
[0011]
The heat sink is made of metal and joined to the semiconductor element and the partition wall with a conductive adhesive, and a plurality of grooves are formed on the surface opposite to the surface to which the semiconductor element is bonded.
[0012]
Furthermore, the method of manufacturing an electronic circuit device of the present invention, a wiring pattern is formed a copper plate to form a step of bending process into a predetermined shape, the insulation resin molded portion disposed processed wiring conductor step and a step of forming an outer housing a conductive resin molded portion on the outside of the insulation resin molded portion integrally formed, bonding a heat sink on the back of the semiconductor device having the projecting electrodes with conductive adhesive A predetermined amount of sealing resin is injected into the semiconductor element mounting portion of the outer casing, the semiconductor element is pushed into the sealing resin, and the protruding electrode is ultrasonically welded to the electrode portion of the wiring conductor. It consists of a process.
[0013]
According to the electronic circuit device having the above-described configuration and the manufacturing method thereof, a semiconductor element having a protruding electrode is joined by ultrasonic welding in a face-down manner to a wiring conductor that is securely fixed to an outer casing made of a highly rigid resin molded product. Therefore, the ultrasonic energy can be efficiently absorbed to achieve reliable bonding, and the space required for electrode bonding can be reduced. In addition, since the outside of the outer casing is covered with a conductive portion, and a heat sink made of metal is bonded to the back surface of the semiconductor element to cover most of the opening of the outer casing, a reliable electromagnetic shielding effect can be obtained. it can. Furthermore, since the partition wall is provided around the mounting portion of the semiconductor element, the sealing resin filled around the semiconductor element does not flow out to the connector pin side.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0015]
FIG. 1 shows a configuration of an electronic circuit device according to an embodiment of the present invention. 1 is a semiconductor element, 2 is a protruding electrode (bump) provided on an electrode pad portion of the semiconductor element 1, and 3 is conductive. The adhesive 4 is a heat sink made of aluminum, and is bonded to the semiconductor element 1 by the conductive adhesive 3, and a plurality of grooves 4 a are formed on the opposite surface. Reference numeral 5 denotes a sealing resin filled around the semiconductor element 1.
[0016]
Reference numeral 6 denotes a wiring conductor, which is disposed in the insulating resin molding portion 7. Reference numeral 8 denotes a conductive resin molded portion integrally formed outside the insulating resin molded portion 7. The insulating resin molding part 7 and the conductive resin molding part 8 constitute a substantially box-shaped outer casing whose one surface is open. Each end portion of the wiring conductor 6 is positioned at the center inside the outer casing, and an electrode portion 6a for joining the protruding electrode 2 of the semiconductor element 1 is formed. Each other end of the wiring conductor 6 is led out near the end of the outer casing to form a connector pin 6b. A partition wall 8a made of a conductive resin molding portion is provided between the semiconductor element mounting portion and the connector pin lead-out portion, so that the sealing resin 5 filled around the semiconductor element 1 is directed to the connector pin 6b side. I try to prevent it from leaking. The partition wall 8a and the heat sink 4 are connected by a conductive adhesive 3 and are electrically connected.
[0017]
Next, a method for manufacturing the electronic circuit device in the present embodiment will be described with reference to FIG. First, as step (1), a copper plate or a copper foil is etched or pressed to form a circuit pattern of the wiring conductor 6. In step (2), the wiring conductor 6 on which the circuit pattern is formed is bent into a predetermined shape. Reference numeral 10 denotes a connecting portion that is connected to each other so that the wiring conductors 6 are not separated apart, and is cut later.
[0018]
In step (3), the bent wiring conductor 6 is molded with an insulating resin using a primary molding die to form an insulating resin molded portion 7. Here, since each wiring conductor 6 is fixed by the insulating resin molding portion 7, the connecting portion 10 is cut as a step (4). Further, as a step (5), in order to form an electromagnetic shield while integrally covering the outside of the insulating resin molding portion 7 and to form a connector 9 portion, the conductive resin is electrically conductive by using a secondary molding die. The resin molding part 8 is formed. The conductive resin molded portion 8 does not contact the wiring conductor 6. Next, in step (6), a predetermined amount of liquid sealing resin 5 is injected into the mounting portion of the semiconductor element 1.
[0019]
On the other hand, a semiconductor element 1 to be mounted is prepared as a step (7), and a protruding electrode (bump) 2 is formed on an electrode pad portion of the semiconductor element 1 in a step (8). Further, as step (9), an aluminum heat sink 4 is bonded to the surface (referred to as the back surface) opposite to the circuit forming surface of the semiconductor element 1 with the conductive adhesive 3. When bonding, air bubbles in the adhesive become a problem, so defoaming is performed in a reduced-pressure atmosphere, and bonding and curing are performed.
[0020]
Next, as step (10), the semiconductor element 1 with the ultrasonic head adsorbed on the portion of the heat sink 4 is aligned and pushed into the sealing resin 5 injected into the outer casing in step (6). The protruding electrode 2 and the electrode portion 6a of the wiring conductor 6 are pressed into contact with each other while applying. At this time, the liquid sealing resin 5 is removed by the pushed-in semiconductor element 1, and the resin between the protruding electrode 2 and the wiring conductor 6 is also removed, thereby realizing the metal-to-metal bond. The sealing resin 5 is heat cured. Finally, the conductive adhesive 3 is applied and cured to ensure conduction between the heat sink 4 and the partition wall 8a, and the electronic circuit device shown in FIG. 1 is completed.
[0021]
As described above, ultrasonic welding is applied to the connection between the protruding electrode 2 of the semiconductor element 1 and the wiring conductor 6. Therefore, the wiring conductor 6 must be firmly fixed to a support having high rigidity. In particular, the protruding electrode 2 vibrates finely by the application of ultrasonic waves, and as the wiring conductor 6 vibrates in the same direction along with it, a loss of ultrasonic energy occurs.
[0022]
Although the wiring conductor 6 incorporated in the resin molded product is mechanically firmly fixed, as shown in FIG. 3, the wiring conductor 6 is further perpendicular to the ultrasonic wave application direction 11. By forming the convex portion 12, the concave portion 13, the bent portion 14, etc., the wiring conductor 6 is more firmly fixed to the insulating resin molded portion 7.
[0023]
In addition, the plurality of grooves 4a formed on the heat sink 4 that is adsorbed by the ultrasonic head to widen the heat radiation area are also formed in a direction perpendicular to the ultrasonic application direction 11, thereby eliminating slippage with the head. The ultrasonic energy can be efficiently transmitted to the joint.
[0024]
【The invention's effect】
As described above, according to the present invention, a semiconductor element having a protruding electrode is joined by ultrasonic welding in a face-down manner to a wiring conductor that is securely fixed to an outer casing made of a highly rigid resin molded product. Further, ultrasonic energy can be efficiently transmitted to achieve reliable bonding, and the space required for electrode bonding can be reduced, so that downsizing can be achieved. In addition, since the outside of the outer casing is covered with a conductive portion, and a heat sink made of metal is bonded to the back surface of the semiconductor element to cover most of the opening of the outer casing, a reliable electromagnetic shielding effect can be obtained. it can. Further, since the partition wall is provided around the mounting portion of the semiconductor element, the sealing resin filled around the semiconductor element does not flow out to the connector pin side, and has various effects.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view and a plan view of an electronic circuit device according to an embodiment of the present invention. FIG. 2 is a process cross-sectional view illustrating a method of manufacturing an electronic circuit device according to an embodiment of the present invention. Fig. 4 is a cross-sectional view of a conventional electronic circuit device. Fig. 4 is a cross-sectional view of a conventional electronic circuit device.
DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Protruding electrode 3 Conductive adhesive 4 Heat sink 5 Sealing resin 6 Wiring conductor 6a Electrode part 6b Connector pin 7 Insulating resin molding part 8 Conductive resin molding part 8a Partition wall 9 Connector

Claims (6)

一面が開口した略箱型で、複数の配線導体が配設された絶縁性樹脂成形部と、該絶縁性樹脂成形部の外側を一体的に覆う導電性樹脂成形部とからなる外筐と、該外筐の内部の略中央部に位置する前記配線導体の各一端に設けられた電極部に突起電極が接合された半導体素子と、該半導体素子の背面に接着されたヒートシンクと、前記半導体素子の周囲に充填された封止樹脂とからなることを特徴とする電子回路装置。An outer box composed of an insulating resin molded portion having a plurality of wiring conductors and a conductive resin molded portion that integrally covers the outside of the insulating resin molded portion ; A semiconductor element in which a protruding electrode is bonded to an electrode portion provided at each end of the wiring conductor located at a substantially central portion inside the outer casing; a heat sink bonded to a back surface of the semiconductor element; and the semiconductor element An electronic circuit device comprising: a sealing resin filled in the periphery of the electronic circuit device. 配線導体の各他端は、外筐の端部付近に導出され、コネクタピンを構成していることを特徴とする請求項１記載の電子回路装置。  2. The electronic circuit device according to claim 1, wherein each of the other ends of the wiring conductor is led out near an end of the outer casing to constitute a connector pin. 外筐は、半導体素子装着部とコネクタピン導出部とを仕切り半導体素子の周囲に充填された封止樹脂のコネクタピン導出部側への流出を防止する導電性樹脂成形部からなる仕切壁が設けられていることを特徴とする請求項２記載の電子回路装置。The outer casing is provided with a partition wall composed of a conductive resin molding portion that partitions the semiconductor element mounting portion and the connector pin lead-out portion and prevents the sealing resin filled around the semiconductor element from flowing out to the connector pin lead-out portion side. electronic circuit device according to claim 2, wherein the being. ヒートシンクは金属からなり、半導体素子及び仕切壁に導電性接着剤で接合されていることを特徴とする請求項３記載の電子回路装置。 The heat sink is made of metal, the electronic circuit device that 請 Motomeko 3 wherein you said are joined by a conductive adhesive to a semiconductor device and a partition wall. ヒートシンクは、半導体素子が接着される面とは反対側の面に複数の溝が形設されていることを特徴とする請求項１または請求項４記載の電子回路装置。 5. The electronic circuit device according to claim 1, wherein the heat sink has a plurality of grooves formed on a surface opposite to a surface to which the semiconductor element is bonded . 銅板に配線パターンを形成し、所定の形状に折曲加工する工程と、加工された配線導体を配置した絶縁性樹脂成形部を形成する工程と、絶縁性樹脂成形部の外側に導電性樹脂成形部を一体的に形成して外筐を構成する工程と、突起電極を有する半導体素子の背面にヒートシンクを導電性接着剤で接着する工程と、前記外筐の半導体素子装着部に所定量の封止樹脂を注入し、前記半導体素子をその封止樹脂中に押し込み、前記突起電極を前記配線導体の電極部に超音波溶接する工程とからなることを特徴とする電子回路装置の製造方法。 Forming a wiring pattern on a copper plate, bending it into a predetermined shape, forming an insulating resin molded part with the processed wiring conductor, and forming a conductive resin outside the insulating resin molded part A step of forming the outer part integrally to form the outer casing, a step of adhering a heat sink to the back surface of the semiconductor element having protruding electrodes with a conductive adhesive, and a predetermined amount of sealing on the semiconductor element mounting part of the outer casing. A method of manufacturing an electronic circuit device, comprising: injecting a stop resin, pressing the semiconductor element into the sealing resin, and ultrasonically welding the protruding electrode to the electrode portion of the wiring conductor .
JP17490498A 1998-06-22 1998-06-22 Electronic circuit device and manufacturing method thereof Expired - Fee Related JP3703969B2 (en)

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JP2010182958A (en) * 2009-02-06 2010-08-19 Seiko Instruments Inc Semiconductor device and method of manufacturing semiconductor device
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