JP3689871B2 - Alkaline cleaning solution for semiconductor substrates - Google Patents
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Description
【０００１】
【産業上の技術分野】
本発明は半導体基板用の洗浄液に関するものであり、さらに詳しくはパーティクルの除去ならびに金属不純物の吸着防止及び洗浄力に優れた半導体基板用のアルカリ性洗浄液に関するものである。
【０００２】
【背景技術】
近年、さらなる半導体素子の高集積化により半導体基板の清浄度に対する要求は益々厳しいものとなってきている。半導体基板の汚染原因となる物質としてはパーティクルや金属不純物、有機物等が挙げられるが、金属不純物については、高集積化半導体基板を得るためには金属原子として基板表面濃度で１０１０ａｔｍｓ／ｃｍ２以下でコントロールしなくてはならないといわれている。しかしながら、半導体装置の製造において用いられている洗浄液はいずれも一長一短があり、その除去しようとする汚染物質の種類毎にアルカリ性の洗浄液と酸性の洗浄液とを組み合わせて用いられているのが現状である。
【０００３】
アンモニア水と過酸化水素及び水からなる洗浄液（ＳＣ−１洗浄液）に代表されるアルカリ性の洗浄液はパーティクルの除去に優れた効果を発揮するが、その反面、半導体基板に金属不純物が吸着するため、さらに希ふっ酸のような酸性の洗浄液で洗浄し、吸着した金属不純物を除去しなければならず、工程を煩雑なものとしている。
【０００４】
このような問題点の解決のために、特公昭５３−２０３７７号公報、特開昭６３−１１４１３１号公報、あるいは特開平３−２１９０００号公報等にみられるように、洗浄液にキレート剤を添加し、金属不純物の吸着を防止する技術が提案されている。
【０００５】
しかしながら、これらのキレート剤は、特定の金属に対しては有効であるが種々の金属の吸着防止には効果的ではなく、又洗浄効果の安定性においても欠けるという問題がある。
【０００６】
更に、キレート剤は、それ自身有機物であるため、新たなコンタミネーションを引き起こす恐れがある。
【０００７】
【発明の開示】
本発明者らは、上記従来技術の問題点を解決するために鋭意研究を行ったところ、パーティクル除去能力に優れ、基板への金属吸着防止能をも兼ね備えた新規なアルカリ性洗浄液を開発することに成功した。
【０００８】
すなわち、本発明は、アンモニアとして０．２〜５重量％のアルカリ性成分、０．２〜４．５重量％のふっ化アンモニウム、０．２〜５重量％の過酸化水素、および水を含む半導体基板洗浄液組成物を提供するものである。
以下、本発明を詳細に説明する。
【０００９】
ＳＣ−１洗浄液に代表されるアルカリ成分と過酸化水素とを組み合わせたアルカリ性洗浄液中において、金属不純物のほとんどは、金属水酸化物となり、一方、半導体基板表面には自然酸化により酸化シリコンの膜が形成される。そのため、金属水酸化物の水酸基と半導体基板表面の酸化膜上のシラノール基との間に水素結合による結合が生じ、金属不純物は半導体基板表面に吸着されると考えられる。
【００１０】
キレート剤は、金属とキレート化合物を形成することにより、洗浄液中において金属水酸化物の生成を抑制するために、半導体基板表面への金属不純物の吸着を防止する作用を奏しているものと考えられている。
【００１１】
本発明に係るアルカリ性洗浄液の成分であるふっ化アンモニウムが解離したふっ素イオンは、アルカリ性側において金属と錯体を形成し、その結果金属水酸化物の生成を抑制するというキレート剤と同様の働きをする。
【００１２】
しかも、ふっ化アンモニウムは半導体基板のエッチング液の１成分として広く用いられているため、電子工業用薬品として、高純度のものが供給されており、不純物による逆汚染の心配もなく、安価に容易に入手できる薬品である。
【００１３】
また、ふっ素イオンの導入薬品として電子工業用に市販されているふっ化水素酸の使用も考えられるが、ふっ化水素酸は、アンモニア水の様なアルカリ成分と中和反応を起こし、洗浄液の性能を低下させる傾向にあり、これを使用した場合、ふっ化水素酸の使用量に見合った量のアンモニア水を多めに加えなければならずコストの面からも不利となる。
【００１４】
このように本発明に係るふっ化アンモニウムは、従来のアルカリ系洗浄液に添加されることにより、その洗浄能力を損なわずに基板への金属不純物の吸着を効果的に防止することができるものである。
【００１５】
さらに本発明の半導体基板用アルカリ性洗浄液について詳細に説明する。
本発明に係る半導体基板用アルカリ性洗浄液としては、従来汎用されているアルカリ性成分と、過酸化水素とからなるアルカリ性洗浄液に、ふっ化アンモニウムの所望量を添加したものが最も好ましい使用態様である。
【００１６】
アルカリ成分としては、アンモニア水や水酸化テトラメチルアンモニウム等が好ましく、その濃度は、使用目的によって異なるがアンモニア水については、通常アンンモニアとして０．２重量％〜５重量％が好ましい濃度である。過酸化水素の濃度は、アンモニアの濃度に応じて適宜決定されるが、通常、アンモニア濃度と同濃度〜１０倍の濃度で用いるのが好ましく、通常は洗浄液中の濃度としてその全量に対し０．２〜５重量％程度である。
【００１７】
ふっ化アンモニウムの濃度は、洗浄液中のアンモニアの濃度とのバランスで決定されるが、アンモニア濃度に対しその１／２から同濃度程度で使用するのが好ましい。ふっ化アンモニウムの濃度と金属吸着防止効果の関係から見てみると、その濃度が３．４重量％付近で飽和する傾向にあり、また６重量％以上の濃度になると洗浄能力が低下する傾向にあるので、６重量％以上の濃度で使用しても、それ以上の効果は期待できない。また、ふっ化アンモニウムの濃度と吸着防止効果は金属の種類によって異なり、例えば、Ａｌの場合は濃度が高いほど吸着防止効果は高いが、Ｚｎの場合はＡｌと比べて低い濃度でも十分に効果を発揮する。
【００１８】
以上の点を考慮してふっ化アンモニウムの濃度を決定する必要があるが、アンモニア、過酸化水素及び水を用いた洗浄液では、通常その配合比は体積比でアンモニア水：過酸化水素：純水が１：１：１００（アンモニア濃度０．２８重量％）から１：１：５（アンモニア濃度４．２重量％）比で用いられており、これに対して、ふっ化アンモニウムの濃度としては０．１〜５重量％、特に０．２〜４．５重量％の濃度範囲で添加して使用するのが好ましい。
【００１９】
次に、本発明の実施例及び比較例を掲げ、さらに本発明を詳細に説明するが、本発明は、これらの実施例によって限定されるものではないことは勿論である。
【００２０】
【比較例および実施例】
〔比較例１〕
２９重量％アンモニア水、３０％過酸化水素水と超純水を体積比１：１：６の割合で混合した洗浄液をＡｌが１ｐｐｂとなるように汚染し、この液にウェハ（４インチφ、ＣＺ、Ｎ（１００））を５０℃で、１０ｍｉｎ．浸漬し、ついで水洗した後、ウェハ表面に吸着されたＡｌを希ふっ酸溶液で回収し、回収されたＡｌをフレームレス原子吸光法により定量し、その吸着量を調べた。
【００２１】
〔比較例２〕
２９重量％アンモニア水、３０％過酸化水素水（キレート剤 ３−アミノメチルホスホン酸 １００ｐｐｍ添加）と超純水を体積比１：１：６の割合で混合した洗浄液を用いて比較例１に記載の方法に準じてＡｌの吸着量を調べた。
【００２２】
〔実施例１〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比０．２５：１：１：６（ふっ化アンモニウム１．２重量％）の割合で混合した洗浄液を用いて比較例１記載の方法に準じてＡｌの吸着量を調べた。
【００２３】
〔実施例２〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比０．５：１：１：６（ふっ化アンモニウム２．３５重量％）の割合で混合した洗浄液を用いて比較例１記載の方法に準じてＡｌの吸着量を調べた。
【００２４】
〔実施例３〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比０．７５：１：１：６（ふっ化アンモニウム３．４重量％）の割合で混合した洗浄液を用いて比較例１記載の方法に準じてＡｌの吸着量を調べた。
【００２５】
〔実施例４〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比１：１：１：６（ふっ化アンモニウム４．４重量％）の割合で混合した洗浄液を用いて比較例１記載の方法に準じてＡｌの吸着量を調べた。
以上、Ａｌについて行った比較例１、２と実施例１〜４の結果を表１に示す。
【００２６】
【表１】
表１から明らかなとおり、本発明に係る洗浄液には、明らかなＡｌの吸着防止効果がみられ、ふっ化アンモニウムの濃度とともにその吸着量が少なくなることが認められた。一方、ホスホン酸系のキレート剤には、Ａｌの吸着防止効果はまったく認められなかった。
【００２８】
〔比較例３〕
２９重量％アンモニア水、３０％過酸化水素水と超純水を体積比１：１：６の割合で混合した洗浄液をＺｎが１ｐｐｂとなるように汚染し、この液にウェハ（４インチφ、ＣＺ、Ｎ（１００））を５０℃で１０ｍｉｎ．浸漬し、ついで水洗した後、ウェハ表面に吸着されたＺｎを希ふっ酸で回収し、回収されたＺｎをフレームレス原子吸光法により定量し、その吸着量を調べた。
【００２９】
〔比較例４〕
２９重量％アンモニア水、３０％過酸化水素水（キレート剤 ３−アミノメチルホスホン酸 １００ｐｐｍ添加）と超純水を体積比１：１：６の割合で混合した洗浄液を用いて比較例３に記載の方法に準じてＺｎの吸着量を調べた。
【００３０】
〔実施例５〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比０．５：１：１：６（ふっ化アンモニウム２．３５重量％）の割合で混合した洗浄液を用いて比較例３に記載の方法に準じてＺｎの吸着量を調べた。
【００３１】
〔実施例６〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比０．７５：１：１：６（ふっ化アンモニウム３．４重量％）の割合で混合した洗浄液を用いて比較例３に記載の方法に準じてＺｎの吸着量を調べた。以上、Ｚｎについて行った比較例３、４及び実施例５、６の結果を表２に示す。
【００３２】
【表２】
表２に示した結果から、Ｚｎの場合は、Ａｌよりも低濃度で効果が現れており、Ａｌと同様にふっ化アンモニウムによって表面への吸着が効果的に抑えられていることが認められた。
【００３４】
〔比較例５〕
２９重量％アンモニア水、３０％過酸化水素水と超純水を体積比１：１：６の割合で混合した洗浄液をＣｕが１００ｐｐｂとなるように汚染し、この液にウェハ（４インチφ、ＣＺ、Ｎ（１００））を５０℃で１０ｍｉｎ．浸漬し、ついで水洗した後、ウェハ表面に吸着されたＣｕをふっ酸−硝酸混合液で回収し、回収されたＣｕをフレームレス原子吸光法により定量し、その吸着量を調べた。
【００３５】
〔実施例７〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比０．５：１：１：６の割合で混合した洗浄液を用いて比較例５に記載の方法に準じてＣｕの吸着量を調べた。
【００３６】
〔実施例８〕
４０％ふっ化アンモニウム、２９％アンモニア水、３０％過酸化水素水と超純水を体積比０．７５：１：１：６の割合で混合した洗浄液を用いて比較例５に記載の方法に準じてＣｕの吸着量を調べた。
以上、Ｃｕについて行った比較例５および実施例７、８の結果を表３に示す。
【００３７】
【表３】
表３に示すとおり、Ｃｕの場合は、Ａｌ、Ｚｎと比較してその効果が顕著ではないが約１／２量に吸着量か低減されることが認められた。
【００３９】
以上の結果から明らかなように、洗浄液にホスホン酸系のキレート剤を添加してもはＡｌやＺｎの吸着防止には殆ど効果が認められないが、本発明に係るふっ化アンモニウムを成分として含有するアルカリ性洗浄液は、Ａｌ及びＺｎのいずれに対しても優れた洗浄力を発揮し、またキレート剤を添加する必要もないので新たなコンタミネーションの問題も生じることなく、半導体基板用洗浄液として極めて有用なものである。[0001]
[Industrial technical field]
The present invention relates to a cleaning solution for a semiconductor substrate, and more particularly to an alkaline cleaning solution for a semiconductor substrate which is excellent in removal of particles, adsorption of metal impurities, and cleaning power.
[0002]
[Background]
In recent years, the demand for cleanliness of a semiconductor substrate has become increasingly severe due to further high integration of semiconductor elements. Examples of substances that cause contamination of the semiconductor substrate include particles, metal impurities, organic substances, and the like. Regarding metal impurities, in order to obtain a highly integrated semiconductor substrate, the substrate surface concentration of 10 10 atms / cm 2 is used as metal atoms. It is said that it must be controlled below. However, all of the cleaning liquids used in the manufacture of semiconductor devices have their merits and demerits. Currently, alkaline cleaning liquids and acidic cleaning liquids are used in combination for each type of contaminant to be removed. .
[0003]
Alkaline cleaning liquids represented by a cleaning liquid (SC-1 cleaning liquid) composed of ammonia water, hydrogen peroxide and water exhibit an excellent effect in removing particles, but on the other hand, metal impurities are adsorbed on the semiconductor substrate. Furthermore, it must be washed with an acidic washing solution such as dilute hydrofluoric acid to remove the adsorbed metal impurities, making the process complicated.
[0004]
In order to solve such problems, a chelating agent is added to the cleaning solution as seen in JP-B-53-20377, JP-A-63-114131, or JP-A-3-219000. A technique for preventing the adsorption of metal impurities has been proposed.
[0005]
However, these chelating agents are effective for specific metals, but are not effective for preventing the adsorption of various metals, and also lack the stability of the cleaning effect.
[0006]
Furthermore, since the chelating agent itself is an organic substance, it may cause new contamination.
[0007]
DISCLOSURE OF THE INVENTION
The inventors of the present invention conducted extensive research to solve the above-described problems of the prior art, and as a result, developed a novel alkaline cleaning solution that has excellent particle removal capability and also has the ability to prevent metal adsorption on the substrate. Successful.
[0008]
That is, the present invention relates to a semiconductor containing 0.2 to 5% by weight of an alkaline component, 0.2 to 4.5% by weight of ammonium fluoride, 0.2 to 5% by weight of hydrogen peroxide, and water as ammonia. A substrate cleaning liquid composition is provided.
Hereinafter, the present invention will be described in detail.
[0009]
In an alkaline cleaning liquid in which an alkaline component typified by the SC-1 cleaning liquid and hydrogen peroxide are combined, most of the metal impurities are metal hydroxides, while a silicon oxide film is formed on the surface of the semiconductor substrate by natural oxidation. It is formed. Therefore, it is considered that a bond due to a hydrogen bond occurs between the hydroxyl group of the metal hydroxide and the silanol group on the oxide film on the surface of the semiconductor substrate, and the metal impurity is adsorbed on the surface of the semiconductor substrate.
[0010]
It is considered that the chelating agent has the effect of preventing the adsorption of metal impurities on the surface of the semiconductor substrate in order to suppress the formation of metal hydroxide in the cleaning liquid by forming a chelate compound with the metal. ing.
[0011]
Fluorine ions from which ammonium fluoride, which is a component of the alkaline cleaning liquid according to the present invention, is dissociated, form a complex with a metal on the alkaline side, and as a result, acts as a chelating agent that suppresses the formation of metal hydroxides. .
[0012]
Moreover, since ammonium fluoride is widely used as a component of an etching solution for semiconductor substrates, high purity chemicals are supplied as chemicals for the electronics industry. It is a medicine that can be obtained.
[0013]
In addition, hydrofluoric acid marketed for the electronics industry can be used as a chemical for introducing fluorine ions, but hydrofluoric acid causes a neutralization reaction with an alkaline component such as aqueous ammonia, and the performance of the cleaning solution. If this is used, a large amount of ammonia water corresponding to the amount of hydrofluoric acid used must be added, which is disadvantageous in terms of cost.
[0014]
As described above, the ammonium fluoride according to the present invention can effectively prevent the adsorption of metal impurities to the substrate without being impaired in the cleaning ability by being added to the conventional alkaline cleaning liquid. .
[0015]
Furthermore, the alkaline cleaning liquid for semiconductor substrates of the present invention will be described in detail.
As the alkaline cleaning solution for a semiconductor substrate according to the present invention, the most preferable usage mode is that a desired amount of ammonium fluoride is added to an alkaline cleaning solution composed of a conventionally used alkaline component and hydrogen peroxide.
[0016]
As the alkaline component, ammonia water, tetramethylammonium hydroxide, and the like are preferable, and the concentration thereof varies depending on the purpose of use, but the ammonia water is preferably a concentration of 0.2% by weight to 5% by weight as ammonia. The concentration of hydrogen peroxide is appropriately determined according to the concentration of ammonia, but it is usually preferable to use it at a concentration that is 10 to 10 times the concentration of ammonia. It is about 2 to 5% by weight.
[0017]
The concentration of ammonium fluoride is determined by the balance with the concentration of ammonia in the cleaning liquid, but it is preferable to use it at a concentration of about 1/2 to the same concentration as the ammonia concentration. Looking at the relationship between the concentration of ammonium fluoride and the metal adsorption prevention effect, the concentration tends to saturate around 3.4% by weight, and the cleaning ability tends to decrease when the concentration exceeds 6% by weight. Therefore, even if it is used at a concentration of 6% by weight or more, no further effect can be expected. In addition, the concentration of ammonium fluoride and the anti-adsorption effect differ depending on the type of metal. For example, the higher the concentration in the case of Al, the higher the anti-adsorption effect. Demonstrate.
[0018]
It is necessary to determine the concentration of ammonium fluoride in consideration of the above points. However, in a cleaning solution using ammonia, hydrogen peroxide and water, the mixing ratio is usually ammonia water: hydrogen peroxide: pure water in a volume ratio. Is used at a ratio of 1: 1: 100 (ammonia concentration 0.28% by weight) to 1: 1: 5 (ammonia concentration 4.2% by weight), whereas the concentration of ammonium fluoride is 0. It is preferable to add it in a concentration range of 1 to 5% by weight, particularly 0.2 to 4.5% by weight.
[0019]
Next, although the Example and comparative example of this invention are hung up and this invention is demonstrated further in detail, of course, this invention is not limited by these Examples.
[0020]
[Comparative Examples and Examples]
[Comparative Example 1]
A cleaning liquid in which 29% by weight ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed at a volume ratio of 1: 1: 6 was contaminated so that Al would be 1 ppb, and the wafer (4 inch φ, CZ, N (100)) at 50 ° C. for 10 min. After soaking and then washing with water, Al adsorbed on the wafer surface was recovered with a dilute hydrofluoric acid solution, and the recovered Al was quantified by flameless atomic absorption method to examine the adsorbed amount.
[0021]
[Comparative Example 2]
29% by weight ammonia water, 30% hydrogen peroxide water (chelating agent 3-aminomethylphosphonic acid added at 100 ppm) and ultrapure water mixed in a volume ratio of 1: 1: 6 as described in Comparative Example 1 The amount of adsorbed Al was examined according to the method.
[0022]
[Example 1]
A cleaning liquid in which 40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed at a volume ratio of 0.25: 1: 1: 6 (ammonium fluoride 1.2 wt%). In accordance with the method described in Comparative Example 1, the adsorption amount of Al was examined.
[0023]
[Example 2]
A cleaning solution in which 40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed at a volume ratio of 0.5: 1: 1: 6 (ammonium fluoride 2.35% by weight). In accordance with the method described in Comparative Example 1, the adsorption amount of Al was examined.
[0024]
Example 3
A cleaning liquid prepared by mixing 40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water in a volume ratio of 0.75: 1: 1: 6 (ammonium fluoride 3.4 wt%). In accordance with the method described in Comparative Example 1, the adsorption amount of Al was examined.
[0025]
Example 4
Using a cleaning liquid in which 40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed at a volume ratio of 1: 1: 1: 6 (ammonium fluoride 4.4 wt%). The amount of adsorbed Al was examined according to the method described in Comparative Example 1.
The results of Comparative Examples 1 and 2 and Examples 1 to 4 performed on Al are shown in Table 1.
[0026]
[Table 1]
As is clear from Table 1, the cleaning liquid according to the present invention has a clear effect of preventing the adsorption of Al, and it was recognized that the amount of adsorption decreases with the concentration of ammonium fluoride. On the other hand, phosphonic acid-based chelating agents did not show any effect of preventing Al adsorption.
[0028]
[Comparative Example 3]
A cleaning liquid in which 29 wt% ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed at a volume ratio of 1: 1: 6 was contaminated so that Zn would be 1 ppb, and the wafer (4 inch φ, CZ, N (100)) at 50 ° C. for 10 min. After immersion and then washing with water, Zn adsorbed on the wafer surface was recovered with dilute hydrofluoric acid, and the recovered Zn was quantified by flameless atomic absorption method to examine the amount of adsorption.
[0029]
[Comparative Example 4]
29% by weight ammonia water, 30% hydrogen peroxide water (chelating agent 3-aminomethylphosphonic acid added at 100 ppm) and ultrapure water mixed at a volume ratio of 1: 1: 6 described in Comparative Example 3 The amount of adsorbed Zn was examined according to the method.
[0030]
Example 5
A cleaning solution in which 40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed at a volume ratio of 0.5: 1: 1: 6 (ammonium fluoride 2.35% by weight). In accordance with the method described in Comparative Example 3, the adsorption amount of Zn was examined.
[0031]
Example 6
A cleaning liquid prepared by mixing 40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water in a volume ratio of 0.75: 1: 1: 6 (ammonium fluoride 3.4 wt%). In accordance with the method described in Comparative Example 3, the adsorption amount of Zn was examined. The results of Comparative Examples 3 and 4 and Examples 5 and 6 performed on Zn are shown in Table 2.
[0032]
[Table 2]
From the results shown in Table 2, in the case of Zn, the effect appeared at a lower concentration than Al, and it was recognized that the adsorption to the surface was effectively suppressed by ammonium fluoride as in the case of Al. .
[0034]
[Comparative Example 5]
A cleaning liquid in which 29% by weight ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed at a volume ratio of 1: 1: 6 was contaminated so that Cu would be 100 ppb. CZ, N (100)) at 50 ° C. for 10 min. After immersing and washing with water, Cu adsorbed on the wafer surface was recovered with a hydrofluoric acid-nitric acid mixture, and the recovered Cu was quantified by flameless atomic absorption method to examine the amount of adsorption.
[0035]
Example 7
40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed in the volume ratio of 0.5: 1: 1: 6 to the method described in Comparative Example 5. Similarly, the amount of Cu adsorbed was examined.
[0036]
Example 8
40% ammonium fluoride, 29% ammonia water, 30% hydrogen peroxide water and ultrapure water were mixed in the volume ratio of 0.75: 1: 1: 6 to the method described in Comparative Example 5. Similarly, the amount of Cu adsorbed was examined.
The results of Comparative Example 5 and Examples 7 and 8 performed on Cu are shown in Table 3.
[0037]
[Table 3]
As shown in Table 3, in the case of Cu, the effect was not as remarkable as that of Al and Zn, but it was recognized that the adsorption amount was reduced to about ½ amount.
[0039]
As is clear from the above results, even if a phosphonic acid-based chelating agent is added to the cleaning solution, there is almost no effect in preventing the adsorption of Al and Zn, but the ammonium fluoride according to the present invention is contained as a component. The alkaline cleaning solution that exhibits excellent detergency for both Al and Zn, and it is not necessary to add a chelating agent, so there is no problem of new contamination and it is extremely useful as a cleaning solution for semiconductor substrates. It is a thing.
Claims (1)
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| JP08778295A JP3689871B2 (en) | 1995-03-09 | 1995-03-09 | Alkaline cleaning solution for semiconductor substrates |
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| Application Number | Priority Date | Filing Date | Title |
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| JP08778295A JP3689871B2 (en) | 1995-03-09 | 1995-03-09 | Alkaline cleaning solution for semiconductor substrates |
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| JP3689871B2 true JP3689871B2 (en) | 2005-08-31 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6896826B2 (en) | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6755989B2 (en) | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| JP2001508239A (en) * | 1997-01-09 | 2001-06-19 | アドバンスド ケミカル システムズ インターナショナル，インコーポレイテッド | Semiconductor wafer cleaning composition and method using aqueous ammonium fluoride and amine |
| WO1998044542A1 (en) * | 1997-03-28 | 1998-10-08 | Tokyo Electron Limited | Method and device for treating substrate |
| JP2000091289A (en) | 1998-09-10 | 2000-03-31 | Hitachi Ltd | Manufacture of semiconductor integrated circuit device |
| US6471735B1 (en) * | 1999-08-17 | 2002-10-29 | Air Liquide America Corporation | Compositions for use in a chemical-mechanical planarization process |
| JP4285649B2 (en) | 2001-07-25 | 2009-06-24 | チョン ヨウン カンパニー リミテッド | Surface treatment composition and treatment method for removing silicon component and reducing metal salt generated during etching of aluminum die casting material |
| JP5493302B2 (en) * | 2007-07-19 | 2014-05-14 | 三菱化学株式会社 | Group III nitride semiconductor substrate and cleaning method thereof |
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| JPH0661242A (en) * | 1991-03-14 | 1994-03-04 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor device |
| JP3169024B2 (en) * | 1991-07-12 | 2001-05-21 | 三菱瓦斯化学株式会社 | Cleaning liquid for silicon wafers and semiconductor devices |
| JPH06208989A (en) * | 1993-01-08 | 1994-07-26 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2743823B2 (en) * | 1994-03-25 | 1998-04-22 | 日本電気株式会社 | Semiconductor substrate wet treatment method |
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