JP3535312B2 - Magnetic field application type single crystal manufacturing equipment - Google Patents
Magnetic field application type single crystal manufacturing equipmentInfo
- Publication number
- JP3535312B2 JP3535312B2 JP16012396A JP16012396A JP3535312B2 JP 3535312 B2 JP3535312 B2 JP 3535312B2 JP 16012396 A JP16012396 A JP 16012396A JP 16012396 A JP16012396 A JP 16012396A JP 3535312 B2 JP3535312 B2 JP 3535312B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- magnetic field
- coil
- container
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F6/00—Superconducting magnets; Superconducting coils
- H01F6/04—Cooling
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は例えば半導体材料
として用いるシリコン結晶を製造する単結晶製造装置に
関し、特に結晶引上部の結晶原料融液に磁界を印加する
磁界発生部を具備した磁界印加式単結晶製造装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for producing a single crystal, for example, for producing a silicon crystal used as a semiconductor material. The present invention relates to a crystal manufacturing apparatus.
【０００２】[0002]
【従来の技術】図１２は、例えば特公平３−６１６３０
号公報に記載されたＣＺ法(チヨクラルスキー法)による
従来の単結晶製造装置の構成例を示す。単結晶原料融液
１(以下融液とする)が充填してあるルツボ２は、ヒータ
３により加熱され、単結晶原料は常に融液状態に保たれ
ている。この融液１中に種結晶４を挿入し、引上駆動機
構５により種結晶４をある一定速度にて引上げてゆく
と、固体−液界面境界層６にて結晶が成長し、単結晶７
が生成される。この際、ヒータ３の加熱によって誘起さ
れる融液１の流体的運動、即ち熱対流８が発生する。2. Description of the Related Art FIG. 12 shows, for example, Japanese Patent Publication No. 3-61630.
An example of the configuration of a conventional single crystal manufacturing apparatus by the CZ method (Czochralski method) described in the publication is shown. A crucible 2 filled with a single crystal raw material melt 1 (hereinafter referred to as a melt) is heated by a heater 3 so that the single crystal raw material is always kept in a molten state. When the seed crystal 4 is inserted into the melt 1 and the seed crystal 4 is pulled up by the pull-up drive mechanism 5 at a constant speed, the crystal grows in the solid-liquid interface boundary layer 6 and the single crystal 7
Is generated. At this time, the fluid motion of the melt 1, that is, the thermal convection 8 is induced by the heating of the heater 3.
【０００３】この熱対流８の発生原因は次の様に説明さ
れる。即ち、熱対流８は、一般に流体の熱膨張による浮
力と流体の粘性力との釣合いが破れた時に生ずる。この
浮力と粘性力との釣合い関係を表す無次元量がグラスホ
フ数ＮGrである。The cause of generation of the thermal convection 8 will be explained as follows. That is, the thermal convection 8 generally occurs when the balance between the buoyancy due to the thermal expansion of the fluid and the viscous force of the fluid is broken. The non-dimensional quantity that represents the balance between the buoyancy and the viscous force is the Grashof number N Gr .
【０００４】ＮGr＝ｇ・α・△Ｔ・Ｒ3／ν2 N Gr = g · α · ΔT · R 3 / ν 2
【０００５】ここで、ｇ；重力加速度 α；融液の熱膨張率 △Ｔ；ルツボ半径方向温度差 Ｒ；ルツボ半径 ν；融液の動粘性係数Here, g: gravitational acceleration α: coefficient of thermal expansion of melt ΔT: Temperature difference in radial direction of crucible R: crucible radius ν; Kinetic viscosity coefficient of melt
【０００６】一般に、グラスホフ数ＮGrが融液１の幾何
学的寸法、熱的境界条件等によって決定される臨界値を
越えると、融液１内に熱対流８が発生する。通常、ＮGr
＞１０6にて融液１の熱対流８は乱流状態となり、ＮGr
＞１０9では撹乱状態となる。現在行われている直径７.
６２〜１０.１６センチ(３〜４インチ)の単結晶引上げ
の融液条件においてはＮGr＞１０9となり(上記ＮGrの式
による)融液１内は撹乱状態となり、融液１の表面すな
わち固体−液界面境界層６は波立った状態となる。Generally, when the Grashof number N Gr exceeds a critical value determined by the geometrical dimensions of the melt 1, thermal boundary conditions, etc., thermal convection 8 occurs in the melt 1. Usually N Gr
At> 10 6, the thermal convection 8 of the melt 1 becomes turbulent and N Gr
When> 10 9 , it is in a disturbed state. Current diameter 7.
Under the melt condition of pulling a single crystal of 62 to 10.16 cm (3 to 4 inches), N Gr > 10 9 (according to the above formula of N Gr ), the inside of the melt 1 is in a disturbed state, and the surface of the melt 1 That is, the solid-liquid interface boundary layer 6 becomes wavy.
【０００７】このような撹乱状態の熱対流８が存在する
と、融液１内、特に固体−液界面境界層６での温度変動
が激しくなり、固体−液界面境界層６の厚さの位置的及
び時間的変動が激しく、成長中結晶の微視的再溶解が顕
著となり、成長した単結晶７中には転位ループ、積層欠
陥等が発生する。しかもこの欠陥部分は、不規則な固体
−液界面境界層６の変動により単結晶引上方向に対して
非均一に発生する。When such a convective heat convection 8 exists, the temperature change in the melt 1, particularly in the solid-liquid interface boundary layer 6, becomes severe, and the thickness of the solid-liquid interface boundary layer 6 varies depending on the position. In addition, the temporal fluctuation is severe, microscopic redissolution of the crystal during growth becomes remarkable, and dislocation loops, stacking faults, etc. occur in the grown single crystal 7. Moreover, this defect portion is nonuniformly generated in the pulling direction of the single crystal due to the irregular fluctuation of the solid-liquid interface boundary layer 6.
【０００８】更に、高温の融液１(例えば１５００℃程
度)が接するルツボ２内面における融液１とルツボ２と
の化学変化により、ルツボ２内面より融液１中に溶解し
ている不純物９がこの熱対流８に搬送され、融液１の内
部全体にわたって分散する。この不純物９が核となり単
結晶７中に転位ループや欠陥、成長縞等が発生して単結
晶７の品質を劣化させている。このため、このような単
結晶７よりＬＳＩ(LargeScale Integration；大規模集
積回路)のウエハーを製造すると、欠陥部分を含んだウ
エハーは電気的特性が劣化しているため使用不可能であ
り、従って歩留りが悪くなる。Further, due to a chemical change between the melt 1 and the crucible 2 on the inner surface of the crucible 2 in contact with the high-temperature melt 1 (eg, about 1500 ° C.), impurities 9 dissolved in the melt 1 from the inner surface of the crucible 2 are generated. The melt 1 is transported by the heat convection 8 and dispersed throughout the melt 1. The impurities 9 serve as nuclei to generate dislocation loops, defects, growth stripes, etc. in the single crystal 7 and deteriorate the quality of the single crystal 7. Therefore, when an LSI (Large Scale Integration) wafer is manufactured from such a single crystal 7, a wafer including a defective portion cannot be used because its electrical characteristics are deteriorated, and thus the yield is high. Becomes worse.
【０００９】今後、単結晶７は増々大直径化してゆく
が、上記のグラスホフ数の式からもわかるようにルツボ
２の直径が増大すればする程、グラスホフ数も増大し、
融液１の熱対流８は一層激しさを増し、単結晶７の品質
も劣化の一途をたどることになる。そこで、熱対流８を
抑制し熱的・化学的に平衡状態に近い成長条件にて単結
晶引上げを行うために、融液１に直流磁場を印加する手
法が提案されている。In the future, the diameter of the single crystal 7 will become larger and larger, but as can be seen from the above equation of the Grashof number, as the diameter of the crucible 2 increases, the Grashof number also increases,
The thermal convection 8 of the melt 1 becomes more violent, and the quality of the single crystal 7 will continue to deteriorate. Therefore, in order to suppress the thermal convection 8 and pull the single crystal under the growth condition that is close to the thermal / chemical equilibrium state, a method of applying a DC magnetic field to the melt 1 has been proposed.
【００１０】図１３に磁場印加による従来の磁界印加式
単結晶製造装置の一例を示す。図１３においては図１２
と同一部分には同一符号を付してその説明は省略する。
即ち、図１３においては、ルツボ２の外周に、融液１中
に単結晶引上方向と直交する方向である図示１１方向に
一様磁場が印加されるように磁石１０を配置する。単結
晶７の融液１は一般に電気伝導度σを有する導電体であ
る。このため、電気伝導度を有する流体が熱対流８によ
り運動する際、磁場印加方向１１と平行でない方向に運
動している流体は、レンツの法則により磁気的抵抗力を
受ける。このため熱対流８の運動は阻止される。一般
に、磁場が印加された時の磁気抵抗力すなわち磁気粘性
係数はνcfiはFIG. 13 shows an example of a conventional magnetic field application type single crystal manufacturing apparatus by applying a magnetic field. In FIG. 13, FIG.
The same parts as those in FIG.
That is, in FIG. 13, the magnet 10 is arranged on the outer periphery of the crucible 2 so that a uniform magnetic field is applied to the melt 1 in the direction 11 shown in the drawing, which is a direction orthogonal to the pulling direction of the single crystal. The melt 1 of the single crystal 7 is generally a conductor having an electric conductivity σ. Therefore, when the fluid having electric conductivity moves due to the thermal convection 8, the fluid moving in a direction not parallel to the magnetic field applying direction 11 receives a magnetic resistance force according to Lenz's law. Therefore, the movement of the thermal convection 8 is blocked. In general, the magnetic resistance when a magnetic field is applied, that is, the magnetic viscosity coefficient, is ν cfi
【００１１】νcfi＝（μＨＤ）2σ／ρΝ cfi = (μHD) 2 σ / ρ
【００１２】ここで、μ；融液の透磁率 Ｈ；磁場強さ Ｄ；ルツボ直径 σ；融液の電気伝導度 ρ；融液の密度Where μ: permeability of the melt H: Magnetic field strength D: Crucible diameter σ; electric conductivity of melt ρ; density of melt
【００１３】となり磁場強さが増大すると磁気粘性係数
νcfiが増大し、先に示したグラスホフ数ＮGrの式中の
νが増大することとなりグラスホフ数は急激に減少し、
ある磁場強さによってグラスホフ数を臨界値より小さく
することができる。これにより、融液１の熱対流は完全
に抑制される。このようにして磁場を印加することによ
り熱対流が抑制されるので上記した単結晶７中の不純物
含有、転位ループの発生、欠陥・成長縞の発生がなくな
り、しかも単結晶引上方向に均一な品質の単結晶７が得
られ、単結晶７の品質および歩留りが向上する。As the magnetic field strength increases, the magnetic viscosity coefficient ν cfi increases, and ν in the above equation of the Grashof number N Gr increases, and the Grashof number sharply decreases.
The Grashof number can be made smaller than the critical value by a certain magnetic field strength. Thereby, the thermal convection of the melt 1 is completely suppressed. By applying a magnetic field in this way, thermal convection is suppressed, so that the above-mentioned inclusion of impurities in the single crystal 7, the generation of dislocation loops, the generation of defects and growth fringes are eliminated, and moreover the single crystal is uniformly pulled up. A quality single crystal 7 is obtained, and the quality and yield of the single crystal 7 are improved.
【００１４】一方、上記特性を呈する磁場印加による単
結晶引上装置としては、近時脚光をあびる超電導磁石を
採用したものがある。On the other hand, as a single crystal pulling apparatus for applying a magnetic field having the above-mentioned characteristics, there is one that employs a superconducting magnet that illuminates the spotlight in the near future.
【００１５】図１４および図１５は、超電導磁石装置を
具備した従来の磁界印加式単結晶製造装置の一構成例を
示すもので、図１４は正面方向から見た構成図、図１５
は上面方向から見た構成図であり、図１３と同一部分に
は同一符号を付してその説明を省略する。FIGS. 14 and 15 show an example of the structure of a conventional magnetic field application type single crystal manufacturing apparatus equipped with a superconducting magnet device. FIG.
13 is a configuration diagram viewed from the upper surface direction, and the same portions as those in FIG. 13 are denoted by the same reference numerals and the description thereof will be omitted.
【００１６】図１４および図１５において、融液１に図
示１１なる方向の磁場(以下横磁場とする)を印加するた
めに、引上装置チャンバ１２の外部に、平らな円筒型の
超電導コイル１３、１４を、コイル中心軸と横磁場方向
１１とが一致する図示位置に設置する。14 and 15, in order to apply a magnetic field in the direction shown in FIG. 11 (hereinafter referred to as a transverse magnetic field) to the melt 1, a flat cylindrical superconducting coil 13 is provided outside the pulling apparatus chamber 12. , 14 are installed at the illustrated positions where the central axis of the coil and the transverse magnetic field direction 11 coincide.
【００１７】超電導コイル１３は、極低温(例えば４.２
Ｋ)液体ヘリウム１５で満たされた内槽１６に収納さ
れ、超電導状態に保持されている。超電導コイル１３を
極低温状態にしておく保冷容器１７ａ、１７ｂは、内槽
１６と外槽１８およびこれらの中間に設置され外部から
の侵入熱量を低減させる輻射シールド板１９より成って
いる。小型冷凍機５０ａ、５０ｂ、６０ａ、６０ｂは、
それぞれ保冷容器１７ａ、１７ｂに直接取付けられてい
る。The superconducting coil 13 has an extremely low temperature (for example, 4.2).
K) It is housed in an inner tank 16 filled with liquid helium 15 and kept in a superconducting state. The cold insulation containers 17a and 17b for keeping the superconducting coil 13 in a cryogenic state are composed of an inner tank 16 and an outer tank 18, and a radiation shield plate 19 installed in the middle between them to reduce the amount of heat entering from the outside. The small refrigerators 50a, 50b, 60a, 60b are
They are directly attached to the cold containers 17a and 17b, respectively.
【００１８】小型冷凍機５０ａ、５０ｂは、この小型冷
凍機５０ａ，５０ｂ内を循環している冷凍媒体(例えば
ヘリウム)５１ａ、５１ｂを圧縮する圧縮機ユニット５
２ａ、５２ｂと、これらにより圧縮された冷凍媒体５１
ａ、５１ｂを断熱膨張させ冷却する膨張機５３ａ、５３
ｂ(５３ｂは図示せず)と、輻射シールド温度(例えば８
０Ｋ)まで冷却された冷凍ステージ５４ａ、５４ｂ(５４
ｂは図示せず)と、ヘリウム液化温度(例えば４.２Ｋ)ま
で冷却されたヘリウム再凝縮器５５ａ、５５ｂ(５５ｂ
は図示せず)とより構成されている。The compact refrigerators 50a and 50b are compressor units 5 for compressing refrigerating media (for example, helium) 51a and 51b circulating in the compact refrigerators 50a and 50b.
2a and 52b and a refrigerating medium 51 compressed by these
Expanders 53a and 53 for adiabatically expanding and cooling a and 51b
b (53b is not shown) and the radiation shield temperature (for example, 8
Refrigeration stages 54a, 54b (54
b is not shown) and the helium recondensers 55a, 55b (55b) cooled to the helium liquefaction temperature (eg 4.2K).
Are not shown).
【００１９】小型冷凍機６０ａ、６０ｂは、小型冷凍機
５０ａ、５０ｂと同様な構造を有し、冷凍媒体６１ａ、
６１ｂと、圧縮機ユニット６２ａ、６２ｂと、膨張機６
３ａ、６３ｂ(６３ｂは図示せず)と、輻射シールド温度
を有する冷凍ステージ６４ａ、６４ｂ(６４ｂは図示し
ない)と、極低温(例えば２０Ｋ)に冷却された冷凍ステ
ージ６５ａ、６５ｂ(６５ｂは図示せず)とにより構成さ
れている。The small refrigerators 60a and 60b have a structure similar to that of the small refrigerators 50a and 50b.
61b, compressor units 62a and 62b, and expander 6
3a, 63b (63b is not shown), freezing stages 64a, 64b (64b are not shown) having a radiation shield temperature, and freezing stages 65a, 65b (65b are not shown) cooled to a cryogenic temperature (for example, 20K). )) And.
【００２０】超電導コイル１３、１４は、常温中(例え
ば３００Ｋ)に布設されたパワーリード２０により直列
に接続され、電源２１より励磁電流が供給される。パワ
ーリード２０よりの外部侵入熱は、小型冷凍機６０ａ、
６０ｂの冷凍ステージ６４ａ、６４ｂ、６５ａ、６５ｂ
により除去される。コイル励磁に伴い蒸発した内槽１６
内のヘリウムガスは、小型冷凍機５０ａ、５０ｂのヘリ
ウム再凝縮器５５ａ、５５ｂにより再凝縮(液化)され
る。このようにして保冷容器１７ａ、１７ｂ内には、常
に液体ヘリウムが満たされ、超電導コイル１３、１４
は、超電導状態を保持し続けることができる。The superconducting coils 13 and 14 are connected in series by a power lead 20 laid at room temperature (for example, 300K), and an exciting current is supplied from a power source 21. The heat entering from the power lead 20 to the outside is the small refrigerator 60a,
60b freezing stages 64a, 64b, 65a, 65b
Are removed by. Inner tank 16 evaporated with coil excitation
The helium gas therein is recondensed (liquefied) by the helium recondensers 55a and 55b of the small refrigerators 50a and 50b. In this way, the cold containers 17a, 17b are always filled with liquid helium, and the superconducting coils 13, 14
Can maintain a superconducting state.
【００２１】一般に、磁界印加式単結晶製造装置は、そ
の引上運転が完了する毎にルツボ２および引上装置チャ
ンバ１２の内面を清掃する必要がある。超電導磁石装置
を具備した従来の単結晶製造装置では、この清掃を下記
のような手順で実施する。まづ、超電導磁石装置から発
生する電磁力が作用する保冷容器１７ａ、１７ｂを支え
るために設置してある支え棒２２を取り除く。各保冷容
器１７ａ、１７ｂを保持している架台２９ａ、２９ｂの
下部に設置された床固定レール２３上を、水平方向２４
に図示２５なる固定位置まで移動させ、単結晶引上装置
本体と超電導磁石装置とを完全に分離する。この状態に
てルツボ２およびチャンバ１２の清掃を行う。Generally, in the magnetic field application type single crystal manufacturing apparatus, it is necessary to clean the inner surfaces of the crucible 2 and the pulling apparatus chamber 12 every time the pulling operation is completed. In a conventional single crystal manufacturing apparatus equipped with a superconducting magnet device, this cleaning is performed in the following procedure. First, the support rod 22 installed to support the cold insulation containers 17a and 17b on which the electromagnetic force generated from the superconducting magnet device acts is removed. In the horizontal direction 24, on the floor fixing rail 23 installed at the bottom of the racks 29a and 29b holding the cold containers 17a and 17b, respectively.
Then, the main body of the single crystal pulling apparatus is completely separated from the superconducting magnet apparatus by moving the apparatus to a fixed position shown in FIG. In this state, the crucible 2 and the chamber 12 are cleaned.
【００２２】また、例えば、同様に特公平３−６１６３
０号公報に示された図１６、１７に示す従来の磁界印加
式単結晶製造装置はＵ字型の配管で接続されてルツボを
取り囲むような超電導マグネットを備え、ルツボの融液
に磁界を印加している。また、超電導マグネットのコイ
ルは直列に接続され、１つの電源から電流が供給される
ようになっている。また、超電導マグネットは図１７の
２４で示されるように、水平方向に移動できるような構
造が可能である。In addition, for example, like Japanese Patent Publication No. 3-6163.
The conventional magnetic field application type single crystal manufacturing apparatus shown in FIGS. 16 and 17 shown in Japanese Patent Publication No. 0-Gazette is provided with a superconducting magnet which is connected by a U-shaped pipe and surrounds the crucible, and applies a magnetic field to the melt of the crucible. is doing. Further, the coils of the superconducting magnet are connected in series so that current is supplied from one power source. Further, the superconducting magnet may have a structure capable of moving in the horizontal direction, as indicated by 24 in FIG.
【００２３】また、例えば特公平５−５９８７５号公報
に示された図１８に示す従来の磁界印加式単結晶製造装
置では磁束を通すためのリターンヨークを備えたマグネ
ットが記載されており、そのマグネットは常電導伝導マ
グネットでも超電導マグネットでもかまわないことが記
述されている。Further, for example, in the conventional magnetic field application type single crystal manufacturing apparatus shown in FIG. 18 of Japanese Patent Publication No. 5-59875, a magnet having a return yoke for passing a magnetic flux is described. It is described that can be either a normal conducting magnet or a superconducting magnet.
【００２４】さらに、特開昭５８−２１７４９３号公報
に示された図１９に示す従来の磁界印加式単結晶製造装
置では、ルツボの融液部のほぼ中心付近に等軸対称かつ
放射状のカスプ磁界を印加することによって育成する結
晶の性状が改善できることが示されている。Further, in the conventional magnetic field application type single crystal manufacturing apparatus shown in FIG. 19 of Japanese Patent Application Laid-Open No. 58-217493, a cusp magnetic field having an axisymmetric and radial shape is formed near the center of the melt portion of the crucible. It has been shown that the properties of the grown crystal can be improved by applying the.
【００２５】また、特開昭６１−２２２９８４号公報に
示された図２０に示す従来の磁界印加式単結晶製造装置
では、コイル２６によってルツボの融液部の表面に等軸
対称かつ放射状のカスプ磁界を印加することによって育
成する結晶の性状を改善しようとすることが示されてい
る。Further, in the conventional magnetic field application type single crystal manufacturing apparatus shown in FIG. 20 of Japanese Patent Laid-Open No. 61-229884, the coil 26 causes the surface of the melt portion of the crucible to be equiaxed symmetrically and radially. It has been shown to try to improve the properties of the grown crystal by applying a magnetic field.
【００２６】[0026]
【発明が解決しようとする課題】従来の磁界印加式単結
晶製造装置は以上のように構成されているので、次のよ
うな問題点があった。まず、水平方向に磁界を与える方
式の場合、空心の超電導電磁石ではルツボに生じる磁界
均一度が悪く、磁界印加式単結晶製造装置の開発当初に
実施され、製造条件の十分検討された鉄心付の常電導電
磁石の均一度と大幅に異なり、従って新たな条件検討が
必要になる。従って従来の製造条件を利用するために
は、空心の超電導電磁石においても磁界均一度が従来の
鉄心付の常電導電磁石程度になるような改善が必要であ
った。Since the conventional magnetic field application type single crystal manufacturing apparatus is constructed as described above, it has the following problems. First of all, in the case of the method of applying a magnetic field in the horizontal direction, the magnetic field uniformity generated in the crucible is poor in the air-core superconducting electromagnet, and it was carried out at the beginning of the development of the magnetic field application type single crystal manufacturing equipment, and the manufacturing conditions were carefully examined. It is significantly different from the homogeneity of the normal electroconductive magnet, so new conditions must be examined. Therefore, in order to utilize the conventional manufacturing conditions, it was necessary to improve the magnetic field homogeneity of an air-core superconducting electromagnet to the level of that of a conventional electroconducting magnet with an iron core.
【００２７】また、超電導コイルによってカスプ型の磁
界を与える方式の場合、超電導コイルの位置はルツボの
位置で決まり、この超電導コイルは液体ヘリウムで冷却
するためにコイル全体を液体ヘリウム容器の中にいれ、
少なくともコイルの１部を液体ヘリウムに浸けて直接冷
却していたため、必然的にコイル上端から液体ヘリウム
容器さらにはこれを収納する保冷容器等の容器の上端ま
でには距離が一定量必要であるため、ルツボ等を含む単
結晶引上部に比べてこれの周りの上記超電導コイルを含
む磁界発生部のほうが高くなり、結晶製造時の結晶の状
況確認が困難であるという問題点もあった。Further, in the case of a system in which a cusp-type magnetic field is applied by a superconducting coil, the position of the superconducting coil is determined by the position of the crucible, and this superconducting coil is put in a liquid helium container for cooling with liquid helium. ,
Since at least a part of the coil was immersed in liquid helium for direct cooling, a certain amount of distance was inevitably required from the upper end of the coil to the upper end of the liquid helium container and the container such as the cold storage container that stores it. In addition, the magnetic field generating portion including the superconducting coil around the single crystal pulling portion including the crucible and the like becomes higher, and there is a problem that it is difficult to confirm the crystal state at the time of crystal production.
【００２８】この発明は上記のような課題を解決するた
めになされたものであり、水平方向に磁界を与える方式
の磁界印加式単結晶製造装置において、ルツボに生じる
磁界強度の均一度を改善することを目的とする。カスプ
磁界を与える方式の磁界印加式単結晶製造装置において
は磁界発生部の超電導コイル上部のスペースを改善し、
製造中の結晶の監視を容易とすることを目的とする。The present invention has been made in order to solve the above problems, and improves the uniformity of the magnetic field strength generated in a crucible in a magnetic field application type single crystal manufacturing apparatus of a type that applies a magnetic field in the horizontal direction. The purpose is to In the magnetic field application type single crystal manufacturing apparatus that applies the cusp magnetic field, the space above the superconducting coil in the magnetic field generation section was improved,
It is intended to facilitate the monitoring of crystals during production.
【００２９】[0029]
【課題を解決するための手段】上記の目的に鑑み、この
発明の第１の発明は、ルツボに充填された単結晶原料融
液に種結晶を挿入し、この結晶を引き上げることにより
単結晶を生成する単結晶引上部と、上記単結晶原料融液
部に水平方向の磁界を与えるための磁界発生部と、を備
え、上記磁界発生部が、上記結晶引上部の両側に設けら
れた一対の主コイル、およびこれらの主コイルより直径
が小さく同軸で励磁方向が逆の一対の副コイルを含むこ
とを特徴とする磁界印加式単結晶製造装置にある。In view of the above object, the first invention of the present invention is to form a single crystal by inserting a seed crystal into a single crystal raw material melt filled in a crucible and pulling the crystal. A single crystal pulling portion to be generated, and a magnetic field generating portion for applying a horizontal magnetic field to the single crystal raw material melt portion, the magnetic field generating portion, a pair of magnetic field generating portion provided on both sides of the crystal pulling upper portion. A magnetic field application type single crystal manufacturing apparatus comprising a main coil and a pair of sub-coils having a diameter smaller than those of the main coils and being coaxial with each other and having opposite excitation directions.
【００３０】この発明の第２の発明は、上記磁界発生部
の主コイルと副コイルがそれぞれ超電導コイルからな
り、上記副コイルの直径が主コイルの直径の０.３倍か
ら０.６倍の範囲で、その起磁力が主コイルの０.３倍か
ら１.０倍の範囲であることを特徴とする請求項１に記
載の磁界印加式単結晶製造装置にある。According to a second aspect of the present invention, the main coil and the sub coil of the magnetic field generating section are each made of a superconducting coil, and the diameter of the sub coil is 0.3 to 0.6 times the diameter of the main coil. In the range, the magnetomotive force is in the range of 0.3 times to 1.0 times that of the main coil, and the magnetic field application type single crystal manufacturing apparatus according to claim 1 characterized.
【００３１】この発明の第３の発明は、上記主コイルお
よび副コイルが上記ルツボ側に湾曲した鞍型コイルであ
ることを特徴とする請求項１または２に記載の磁界印加
式単結晶製造装置にある。In a third aspect of the present invention, the magnetic field application type single crystal manufacturing apparatus according to claim 1 or 2, characterized in that the main coil and the sub coil are saddle type coils curved toward the crucible side. It is in.
【００３２】この発明の第４の発明は、上記主コイルだ
けをルツボ側に湾曲した鞍型コイルとしたことを特徴と
する請求項１または２に記載の磁界印加式単結晶製造装
置にある。A fourth invention of the present invention is the magnetic field application type single crystal manufacturing apparatus as set forth in claim 1 or 2, characterized in that only the main coil is a saddle type coil curved toward the crucible side.
【００３３】この発明の第５の発明は、ルツボに充填さ
れた単結晶原料融液に種結晶を挿入し、この結晶を引き
上げることにより単結晶を生成する単結晶引上部と、上
記単結晶原料融液部にカスプ磁界を与える磁界発生部
と、を備え、上記磁界発生部が、上記単結晶原料融液部
にカスプ磁界を与えるために上記単結晶引上部の周囲に
沿って巻回された上下１対の超電導コイル、これらの超
電導コイルをそれぞれに液体冷却材で冷却して収納する
上下の冷却材容器、これらの冷却材容器の間を連結する
冷却材流通用サイフォン配管、およびこれらを収納する
保冷容器、を備えたことを特徴とする磁界印加式単結晶
製造装置にある。A fifth invention of the present invention is to insert a seed crystal into a single crystal raw material melt filled in a crucible and pull the crystal to produce a single crystal, and a single crystal pulling portion, and the above single crystal raw material. A magnetic field generating section for applying a cusp magnetic field to the melt section, wherein the magnetic field generating section is wound along the periphery of the single crystal pulling upper part in order to apply a cusp magnetic field to the single crystal raw material melt section. A pair of upper and lower superconducting coils, upper and lower coolant containers that cool and store each of these superconducting coils with a liquid coolant, a siphon pipe for coolant distribution that connects between these coolant containers, and these In the magnetic field application type single crystal manufacturing apparatus, the cold storage container is provided.
【００３４】この発明の第６の発明は、下側の上記冷却
材容器を上側の冷却材容器に比べて小さくし、主に上側
の冷却材容器に液体冷却材を貯蔵させたことを特徴とす
る請求項５に記載の磁界印加式単結晶製造装置にある。A sixth invention of the present invention is characterized in that the lower coolant container is made smaller than the upper coolant container, and liquid coolant is mainly stored in the upper coolant container. The magnetic field application type single crystal manufacturing apparatus according to claim 5.
【００３５】この発明の第７の発明は、ルツボに充填さ
れた単結晶原料融液に種結晶を挿入し、この結晶を引き
上げることにより単結晶を生成する単結晶引上部と、上
記単結晶原料融液部にカスプ磁界を与える磁界発生部
と、を備え、上記磁界発生部が、上記単結晶原料融液部
にカスプ磁界を与えるために上記単結晶引上部の周囲に
沿って巻回された上下１対の超電導コイル、これらの超
電導コイルを冷却する冷却手段、およびこれらを冷却状
態を維持する保冷容器からなり、上記保冷容器が上記単
結晶引上部に対してより低い位置になるように、上記単
結晶原料融液部の位置からその位置が決まる上記超電導
コイルの上側の超電導コイルを上記保冷容器のより上側
に収納するようにしたことを特徴とする磁界印加式単結
晶製造装置にある。A seventh invention of the present invention is to insert a seed crystal into a single crystal raw material melt filled in a crucible and pull the crystal to produce a single crystal, and a single crystal pulling portion, and the above single crystal raw material. A magnetic field generating section for applying a cusp magnetic field to the melt section, wherein the magnetic field generating section is wound along the periphery of the single crystal pulling upper part in order to apply a cusp magnetic field to the single crystal raw material melt section. A pair of upper and lower superconducting coils, cooling means for cooling these superconducting coils, and a cold insulation container for maintaining them in a cooled state, wherein the cold insulation container is at a lower position with respect to the single crystal pulling upper part, The magnetic field application type single crystal manufacturing apparatus is characterized in that the superconducting coil above the superconducting coil whose position is determined from the position of the melt portion of the single crystal raw material is housed above the cold insulating container.
【００３６】この発明の第８の発明は、上記冷却手段
が、液体冷却材を貯蔵すると共に上記超電導コイルを収
納した冷却材容器と、この冷却材容器内に設けられた熱
伝導部材と、からなり、上記液体冷却材の液面が上側と
下側の超電導コイルの間にあり、上側の超電導コイルが
上記冷却材容器内の上端に設けられ、下側の超電導コイ
ルが上記液体冷却材に満たされて冷却され、上側の超電
導コイルが上記熱伝導部材を介して上記液体冷却材によ
り冷却され、上記保冷容器が上記冷却材容器を収納する
ことを特徴とする請求項７に記載の磁界印加式単結晶製
造装置にある。According to an eighth aspect of the present invention, the cooling means comprises a coolant container which stores the liquid coolant and also accommodates the superconducting coil, and a heat conducting member provided in the coolant container. The liquid surface of the liquid coolant is between the upper and lower superconducting coils, the upper superconducting coil is provided at the upper end in the coolant container, and the lower superconducting coil fills the liquid coolant. 8. The magnetic field application type according to claim 7, wherein the superconducting coil on the upper side is cooled and cooled by the liquid coolant through the heat conducting member, and the cool container stores the coolant container. It is in a single crystal manufacturing device.
【００３７】この発明の第９の発明は、上記冷却手段
が、液体冷却材を貯蔵して下側の超電導コイルを収納し
た冷却材容器と、この冷却材容器の温度を上側の超電導
コイルに伝える熱伝導部材と、からなり、上記保冷容器
がこれらを収納することを特徴とする請求項７に記載の
磁界印加式単結晶製造装置にある。In a ninth aspect of the present invention, the cooling means stores a liquid coolant and stores a lower superconducting coil, and a temperature of the coolant container is transmitted to the upper superconducting coil. The magnetic field application type single crystal manufacturing apparatus according to claim 7, characterized in that it comprises a heat conduction member, and the cold storage container stores these.
【００３８】この発明の第１０の発明は、上記冷却手段
が、上記上側および下側の超電導コイルの間に設けられ
液体冷却材を貯蔵した冷却材容器と、この冷却材容器の
温度を上側および下側の超電導コイルのそれぞれに伝え
る熱伝導部材と、からなり、上記保冷容器がこれらを収
納することを特徴とする請求項７に記載の磁界印加式単
結晶製造装置にある。In a tenth aspect of the present invention, the cooling means is provided between the upper and lower superconducting coils to store a liquid coolant, and the temperature of the coolant container is set to the upper and lower sides. The magnetic field application type single crystal manufacturing apparatus according to claim 7, characterized in that it comprises a heat conductive member for transmitting to each of the lower superconducting coils, and the cold container stores these.
【００３９】この発明の第１１の発明は、上記冷却手段
が、上記超電導コイルを冷却するための冷凍機と、この
冷凍機の温度を上側および下側の超電導コイルのそれぞ
れに伝える熱伝導部材と、からなり、上記保冷容器が上
記上側および下側の超電導コイル並びに上記熱伝導部材
を収納することを特徴とする請求項７に記載の磁界印加
式単結晶製造装置にある。In an eleventh aspect of the present invention, the cooling means includes a refrigerator for cooling the superconducting coil, and a heat conducting member for transmitting the temperature of the refrigerator to each of the upper and lower superconducting coils. 8. The magnetic field application type single crystal manufacturing apparatus according to claim 7, wherein the cold insulation container houses the upper and lower superconducting coils and the heat conducting member.
【００４０】この発明の第１２の発明は、上記上側の超
電導コイルの起磁力を下側の超電導コイルの起磁力の７
０％から３０％の範囲とし、上記カスプ磁界の０点を上
方に移動させたことを特徴とする請求項５ないし１１の
いずれかに記載の磁界印加式単結晶製造装置にある。In a twelfth aspect of the present invention, the magnetomotive force of the upper superconducting coil is equal to that of the lower superconducting coil.
The magnetic field application type single crystal manufacturing apparatus according to any one of claims 5 to 11, wherein the range of 0% to 30% is set and the zero point of the cusp magnetic field is moved upward.
【００４１】[0041]
【発明の実施の形態】以下、この発明を各実施の形態に
従って説明する。なお、実施の形態１ないし３は単結晶
原料融液に水平方向の磁界を与える単結晶製造装置、実
施の形態４ないし９は単結晶原料融液にカスプ磁界を与
える単結晶製造装置に関するものである。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below in accordance with each embodiment. Note that the first to third embodiments relate to a single crystal manufacturing apparatus that applies a horizontal magnetic field to the single crystal raw material melt, and the fourth to ninth embodiments relate to a single crystal manufacturing apparatus that applies a cusp magnetic field to the single crystal raw material melt. is there.
【００４２】実施の形態１．図１はこの発明の一実施の
形態による磁界印加式単結晶製造装置の構成を示す図で
ある。図において、従来のものと同一もしくは相当する
部分は同一符号で示す。１００は磁界印加式単結晶製造
装置、１は単結晶原料融液、２はルツボ、３はヒータ、
４は種結晶、７は単結晶、８は熱対流、１１は磁場印加
方向、２１ａは超電導主コイル、２１ｂは超電導副コイ
ルである。Embodiment 1. FIG. 1 is a diagram showing the configuration of a magnetic field application type single crystal manufacturing apparatus according to an embodiment of the present invention. In the figure, the same or corresponding parts as those of the conventional one are indicated by the same reference numerals. Reference numeral 100 is a magnetic field application type single crystal manufacturing apparatus, 1 is a single crystal raw material melt, 2 is a crucible, 3 is a heater,
Reference numeral 4 is a seed crystal, 7 is a single crystal, 8 is thermal convection, 11 is a magnetic field application direction, 21a is a superconducting main coil, and 21b is a superconducting auxiliary coil.
【００４３】なお、単結晶原料融液１、ルツボ２、ヒー
タ３、種結晶４、単結晶７からなる部分が単結晶引上部
を構成し、超電導主コイル２１ａ、超電導副コイル２１
ｂが磁界発生部を構成する。また、超電導コイルのため
の冷却材容器や保冷容器の図示は省略されている。The portion consisting of the single crystal raw material melt 1, the crucible 2, the heater 3, the seed crystal 4, and the single crystal 7 constitutes the single crystal pulling upper part, and the superconducting main coil 21a and the superconducting subcoil 21 are provided.
b constitutes a magnetic field generator. Further, the illustration of the cooling material container and the cold insulation container for the superconducting coil is omitted.
【００４４】次に動作について説明する。単結晶原料融
液１が充填してあるルツボ２はヒータ３により加熱さ
れ、単結晶原料は常に融液状態に保たれている。この融
液１中に種結晶４を挿入し、引上げ駆動機構(図示せず)
によって種結晶４を一定速度にて引上げていくと、単結
晶７が生成される。また、超電導主コイル２１ａおよび
副コイル２１ｂはルツボ２の融液１中に磁場印加方向１
１で示す水平方向の磁場を発生する。Next, the operation will be described. The crucible 2 filled with the single crystal raw material melt 1 is heated by the heater 3, and the single crystal raw material is always kept in a molten state. A seed crystal 4 is inserted into this melt 1, and a pulling drive mechanism (not shown)
When the seed crystal 4 is pulled up at a constant speed by, a single crystal 7 is generated. Further, the superconducting main coil 21a and the sub-coil 21b are placed in the melt 1 of the crucible 2 in the magnetic field application direction 1
A horizontal magnetic field indicated by 1 is generated.
【００４５】ヒータ３の加熱によって誘起される熱対流
８は、超電導主コイル２１ａおよび超電導副コイル２１
ｂによって発生する１１で示される磁界によって生じる
磁気的抵抗力によって大きく抑制される。The thermal convection 8 induced by the heating of the heater 3 is superconducting main coil 21a and superconducting sub coil 21.
It is largely suppressed by the magnetic resistance force generated by the magnetic field indicated by 11 generated by b.
【００４６】超電導主コイル２１ａと超電導副コイル２
１とは逆方向に通電され、図２に示すような磁界均一度
の改善効果を示す。図２のデータは主コイルの平均半径
８０.０ｃｍ、両側のコイル間隔１０４ｃｍ、ルツボ中
心磁界０.４Ｔという条件でのものである。またここで
の磁界均一度(ａ)は、Superconducting main coil 21a and superconducting sub coil 2
The current is applied in the direction opposite to the direction of 1, and the effect of improving the magnetic field uniformity as shown in FIG. 2 is exhibited. The data in FIG. 2 is obtained under the conditions that the average radius of the main coil is 80.0 cm, the coil spacing on both sides is 104 cm, and the central magnetic field of the crucible is 0.4T. The magnetic field homogeneity (a) here is
【００４７】ａ＝(ルツボ内での最大磁界−ルツボ内で
の最小磁界)／(ルツボ内での最大磁界＋ルツボ内での最
小磁界)A = (maximum magnetic field in crucible-minimum magnetic field in crucible) / (maximum magnetic field in crucible + minimum magnetic field in crucible)
【００４８】で定義されている。直径が１２.７センチ
(５インチ)程度までの結晶を製造する場合、従来からの
鉄心を使用した常電導の電磁石を使用した場合、図２に
示す磁界均一度(上記ａで定義)は最大で１５％程度であ
った。そこで、大型結晶の製造に使用する空心の超電導
電磁石でも、均一度が少なくとも従来の鉄心方式の常電
導電磁石と同程度が望ましい。そこで、副コイル２１ｂ
の直径を主コイル２１ａの直径の０.３倍から０.６倍の
範囲とし、また副コイル２１ｂの起磁力は主コイル２１
ａの０.３倍から１.０倍の範囲とする。Is defined by Diameter is 12.7 cm
When manufacturing a crystal up to about (5 inches) and using a normal conducting electromagnet using a conventional iron core, the magnetic field homogeneity (defined by a above) shown in FIG. 2 is about 15% at maximum. It was Therefore, it is desirable that even the air-core superconducting electromagnet used for the production of large crystals has at least the same degree of uniformity as the conventional iron-core type normal conducting electromagnet. Therefore, the sub coil 21b
Of the main coil 21a is 0.3 to 0.6 times the diameter of the main coil 21a.
The range is from 0.3 to 1.0 times a.
【００４９】このように、結晶引上部の両側に設けられ
た一対の主コイル２１ａ、およびこれらの主コイル２１
ａより直径が小さくこれらと同軸で励磁方向が逆の一対
の副コイル２１ｂによって単結晶原料融液１内に水平方
向の磁界を発生することで、空心の超電導コイルを使用
して、従来の鉄心を使用した常電導電磁石と同等の磁界
均一度を得ることができる。As described above, the pair of main coils 21a provided on both sides of the crystal pulling upper portion, and these main coils 21a.
By generating a horizontal magnetic field in the single crystal raw material melt 1 by a pair of sub-coils 21b having a diameter smaller than that of a and having the same exciting directions as those of the conventional iron cores, an air-core superconducting coil is used. It is possible to obtain a magnetic field homogeneity equivalent to that of the normal electroconductive magnet using.
【００５０】なお、上記実施の形態では超電導コイルの
場合について説明したが、空心の常電導コイルにおい
て、上述の主コイルおよび副コイルで構成して磁界を発
生しても同等の効果が得られる。但し、その際の主コイ
ルと副コイルの直径および起磁力の比率は上記条件には
当てはまらない。In the above embodiment, the case of the superconducting coil has been described, but in the air-conducting normal conducting coil, even if the magnetic field is generated by the main coil and the sub coil described above, the same effect can be obtained. However, the diameter of the main coil and the auxiliary coil and the ratio of the magnetomotive forces at that time do not apply to the above conditions.
【００５１】実施の形態２．図３はこの発明の別の実施
の形態による磁界印加式単結晶製造装置の構成を示す図
である。この実施の形態では、実施の形態１の主コイル
および副コイルをルツボ側に湾曲した鞍型コイルとし
た。図において、従来および上記実施の形態のものと同
一もしくは相当する部分は同一符号で示す。１１０は磁
界印加式単結晶製造装置、２１ａａは鞍型の超電導主コ
イル、２１ｂａは鞍型の超電導副コイルである。Embodiment 2. FIG. 3 is a diagram showing the structure of a magnetic field application type single crystal manufacturing apparatus according to another embodiment of the present invention. In this embodiment, the main coil and the sub coil of the first embodiment are saddle-type coils that are curved toward the crucible side. In the figure, the same or corresponding portions as those of the conventional and the above-described embodiments are denoted by the same reference numerals. 110 is a magnetic field application type single crystal manufacturing apparatus, 21aa is a saddle type superconducting main coil, and 21ba is a saddle type superconducting sub coil.
【００５２】超電導副コイル２１ｂａは超電導主コイル
２１ａａと逆方向に励磁され、これらによりルツボ２の
部分に実施の形態１と同様に均一度の高い磁界が得られ
る。また、実施の形態１のようにコイルが平らなコイル
である場合と比較して、ルツボ側に湾曲した鞍型のコイ
ルの場合にはルツボ２の部分により近いため、平らなコ
イルにおいけると同一の磁界を得るのに少ない起磁力で
よく、かつ漏洩磁界が小さいというメリットがある。Superconducting sub-coil 21ba is excited in the direction opposite to that of main superconducting coil 21aa, and as a result, a magnetic field of high uniformity is obtained in the crucible 2 portion as in the first embodiment. Further, as compared with the case where the coil is a flat coil as in the first embodiment, in the case of a saddle-shaped coil curved toward the crucible side, it is closer to the crucible 2 portion, so it is possible to use a flat coil. There is an advantage that a small magnetomotive force is required to obtain the same magnetic field and the leakage magnetic field is small.
【００５３】実施の形態３．図４はこの発明のさらに別
の実施の形態による磁界印加式単結晶製造装置の構成を
示す図である。この実施の形態の磁界印加式単結晶製造
装置１２０では、主コイルだけを鞍型コイルとした。Embodiment 3. FIG. 4 is a diagram showing the configuration of a magnetic field application type single crystal manufacturing apparatus according to still another embodiment of the present invention. In the magnetic field application type single crystal manufacturing apparatus 120 of this embodiment, only the main coil is a saddle type coil.
【００５４】上記実施の形態２では主コイルと副コイル
を共に鞍型コイルとしたが、副コイルは発生磁気モーメ
ントが小さいため、漏洩磁界に与える効果が小さい。そ
こでこの実施の形態では、副コイルは通常の平らな円筒
形の超伝導副コイル２１ｂとし、主コイルだけを鞍型の
超電導主コイル２２ａａとした。これにより、副コイル
に製造費用のかかる鞍型コイルを使用しないため、コス
ト削減が行える。In the second embodiment, the saddle type coil is used as both the main coil and the sub coil, but the sub coil has a small magnetic moment, and therefore has a small effect on the leakage magnetic field. Therefore, in this embodiment, the sub-coil is an ordinary flat cylindrical superconducting sub-coil 21b, and only the main coil is a saddle type superconducting main coil 22aa. As a result, since a saddle-shaped coil, which is expensive to manufacture, is not used for the sub coil, the cost can be reduced.
【００５５】実施の形態４．図５はこの発明のさらに別
の実施の形態による磁界印加式単結晶製造装置の構成を
示す図である。従来のものと同一もしくは相当する部分
は同一符号で示す。図５において、１３０は磁界印加式
単結晶製造装置、１５は液体冷却材である液体ヘリウ
ム、２２ａ、２２ｂは軸対称かつ放射状のカスプ磁界を
発生する上下２段の超電導コイル、３１ａ、３１ｂは超
電導コイル２２ａ、２２ｂをそれぞれに収納すると共に
これを冷却するための液体ヘリウム１５を貯蔵する冷却
材容器であるヘリウム容器、３２ａ、３２ｂは上側のヘ
リウム容器３１ａと下側のヘリウム容器３１ｂを連結す
るヘリウム流通用サイフォン配管、１７は保冷容器であ
るこれらを真空状態に保つ真空容器である。Fourth Embodiment FIG. 5 is a diagram showing the structure of a magnetic field application type single crystal manufacturing apparatus according to still another embodiment of the present invention. The same or corresponding parts as those of the conventional one are indicated by the same reference numerals. In FIG. 5, 130 is a magnetic field application type single crystal manufacturing apparatus, 15 is liquid helium which is a liquid coolant, 22a and 22b are superconducting coils of two upper and lower stages which generate axisymmetric and radial cusp magnetic fields, and 31a and 31b are superconducting coils. A helium container which is a coolant container that houses the coils 22a and 22b and stores liquid helium 15 for cooling the coils, and 32a and 32b are helium that connects the upper helium container 31a and the lower helium container 31b. A siphon pipe for distribution, 17 is a vacuum container which is a cold container for keeping them in a vacuum state.
【００５６】なお、単結晶原料融液１、ルツボ２、ヒー
タ３、種結晶４、単結晶７からなる部分が単結晶引上部
を構成し、超電導コイル２２ａ、２２ｂ、ヘリウム容器
３１ａ、３１ｂ、ヘリウム流通用サイフォン配管３２
ａ、３２ｂ、液体ヘリウム１５および真空容器１７が磁
界発生部を構成する。The single crystal raw material melt 1, the crucible 2, the heater 3, the seed crystal 4, and the single crystal 7 constitute a single crystal pulling portion, and the superconducting coils 22a and 22b, the helium containers 31a and 31b, and the helium are included. Distribution siphon piping 32
The a, 32b, the liquid helium 15 and the vacuum container 17 form a magnetic field generation unit.
【００５７】上側のヘリウム容器３１ａは液体ヘリウム
１５の供給部分(図示せず)に接続されており、液体ヘリ
ウム１５は主として上側のヘリウム容器３１ａに貯蔵さ
れる。液体ヘリウム１５は正常状態ではその上面(液面)
は上側の超電導コイル２２ａより上にあって、超電導コ
イル２２ａおよび２２ｂを冷却する。The upper helium container 31a is connected to a supply portion (not shown) of the liquid helium 15, and the liquid helium 15 is mainly stored in the upper helium container 31a. Liquid helium 15 has its upper surface (liquid level) in a normal state.
Is above the upper superconducting coil 22a and cools the superconducting coils 22a and 22b.
【００５８】従来のようにヘリウム容器を一つとした場
合は、上側の超電導コイル２２ａと下側の超電導コイル
２２ｂとの間の液体ヘリウムは余分な部分となるが、こ
の実施の形態このような構成とすることにより、ヘリウ
ム容器を一つとした場合に比べて液体ヘリウムの貯蔵量
を減らすことができ、ひいては軽量化、低コスト化が可
能になる。また、図示のように上側のヘリウム容器３１
ａに対して下側のヘリウム容器３１ｂを小さくすること
により、液体ヘリウムをより減らすことができる。When one helium container is used as in the conventional case, the liquid helium between the upper superconducting coil 22a and the lower superconducting coil 22b becomes an extra portion, but this embodiment has such a structure. By doing so, it is possible to reduce the storage amount of liquid helium as compared with the case where only one helium container is used, and thus it becomes possible to reduce the weight and cost. Also, as shown, the upper helium container 31
Liquid helium can be further reduced by making the helium container 31b on the lower side of a smaller.
【００５９】実施の形態５．図６はこの発明のさらに別
の実施の形態による磁界印加式単結晶製造装置の構成を
示す図である。以下の各実施の形態は、単結晶引上部で
の単結晶のできぐわいをより観察し易いように、磁界発
生部の保冷容器が単結晶引上部に対してより低い位置に
なるように、単結晶原料融液部の位置からその位置が決
まる超電導コイルの上側の超電導コイルを保冷容器のよ
り上側に収納するようにしたものに関するものである。Embodiment 5. FIG. 6 is a view showing the structure of a magnetic field application type single crystal manufacturing apparatus according to still another embodiment of the present invention. In each of the following embodiments, in order to make it easier to observe the behavior of the single crystal in the upper portion of the single crystal, the cold storage container of the magnetic field generating portion is placed at a lower position with respect to the upper portion of the single crystal. The present invention relates to a device in which a superconducting coil located above a superconducting coil whose position is determined by the position of a crystal raw material melt portion is housed above a cool container.
【００６０】図６において、１４０は磁界印加式単結晶
製造装置、３１は超電導コイル２２ａ、２２ｂを共に収
納すると共にこれを冷却するための液体ヘリウム１５を
貯蔵する冷却材容器であるヘリウム容器、４１は熱伝導
部材である。In FIG. 6, 140 is a magnetic field application type single crystal manufacturing apparatus, 31 is a helium container which is a coolant container for accommodating both the superconducting coils 22a and 22b and storing liquid helium 15 for cooling them, 41 Is a heat conducting member.
【００６１】なお、単結晶原料融液１、ルツボ２、ヒー
タ３、種結晶４、単結晶７からなる部分が単結晶引上部
を構成し、超電導コイル２２ａ、２２ｂ、ヘリウム容器
３１、液体ヘリウム１５および真空容器１７が磁界発生
部を構成し、特にヘリウム容器３１および液体ヘリウム
１５が冷却手段を構成する。The portion consisting of the single crystal raw material melt 1, the crucible 2, the heater 3, the seed crystal 4, and the single crystal 7 constitutes the single crystal pulling upper portion, and the superconducting coils 22a and 22b, the helium container 31, the liquid helium 15 are formed. Further, the vacuum container 17 constitutes a magnetic field generator, and particularly the helium container 31 and the liquid helium 15 constitute a cooling means.
【００６２】ヘリウム容器３１内において、超電導コイ
ル２２ａ、２２ｂはそれぞれヘリウム容器３１内の上端
と下端に設けられ、液体ヘリウム１５の液面はこれらの
超電導コイル２２ａ、２２ｂの間にある。そして、下側
の超電導コイル２２ｂは液体ヘリウム１５に浸かってい
るので直接冷却され、上側の超電導コイル２２ａは熱伝
導部材４１を介して液体ヘリウム１５の寒冷により冷却
される。In the helium container 31, the superconducting coils 22a and 22b are respectively provided at the upper end and the lower end in the helium container 31, and the liquid level of the liquid helium 15 is between these superconducting coils 22a and 22b. Since the lower superconducting coil 22b is immersed in the liquid helium 15, it is directly cooled, and the upper superconducting coil 22a is cooled by the cold of the liquid helium 15 via the heat conducting member 41.
【００６３】このように構成することにより従来のよう
に上側の超電導コイル２２ａの上方に空間を設ける必要
がなくり、上下方向の位置が単結晶引上部の単端結原料
融液１の上下方向位置で決まる超電導コイルの上側の超
電導コイル２２ａを、ヘリウム容器３１の上端に設ける
ことができるので、ヘリウム容器３１および真空容器１
７を従来に比べて相対的に下側に下げることができる。With this structure, it is not necessary to provide a space above the upper superconducting coil 22a as in the conventional case, and the vertical position is the vertical direction of the single-ended raw material melt 1 at the upper part of the single crystal. Since the superconducting coil 22a above the superconducting coil determined by the position can be provided at the upper end of the helium container 31, the helium container 31 and the vacuum container 1
7 can be relatively lowered to the lower side as compared with the conventional one.
【００６４】結晶の製造にあたっては結晶の製造状況を
監視するために、ルツボ２の上側から融液１の表面や単
結晶７の外観を常に観察する必要があるが、このように
真空容器１７を下げることができる、すなわち高さが低
いと、監視が非常に容易になる。In manufacturing the crystal, in order to monitor the crystal manufacturing state, it is necessary to always observe the surface of the melt 1 and the appearance of the single crystal 7 from the upper side of the crucible 2. Being able to be lowered, ie low in height, makes monitoring much easier.
【００６５】実施の形態６．図７はこの発明のさらに別
の実施の形態による磁界印加式単結晶製造装置の構成を
示す図である。図７の磁界印加式単結晶製造装置１５０
では、下側の超電導コイル２２ｂのみを液体ヘリウム１
５を貯蔵したヘリウム容器３１ｃに収納して直接液体ヘ
リウム１５で冷却し、上側の超電導コイル２２ａは熱伝
導部材４１ａを介して液体ヘリウム１５の寒冷で冷却す
るようにしている。そしてこれらは保冷容器である真空
容器１７内に収納されている。Sixth Embodiment FIG. 7 is a diagram showing the configuration of a magnetic field application type single crystal manufacturing apparatus according to still another embodiment of the present invention. Magnetic field application type single crystal manufacturing apparatus 150 of FIG.
Then, only the lower superconducting coil 22b is replaced with liquid helium 1
5 is stored in a helium container 31c storing it and directly cooled by the liquid helium 15, and the upper superconducting coil 22a is cooled by cold of the liquid helium 15 via the heat conducting member 41a. And these are accommodated in the vacuum container 17 which is a cold container.
【００６６】このように構成することにより、上側の超
電導コイル２２ａにはヘリウム容器が不要となり、その
分、さらに真空容器１７を下側に下げることができ、単
結晶７の製造状況の監視がより容易になる。With this structure, the superconducting coil 22a on the upper side does not need a helium container, and the vacuum container 17 can be further lowered to that extent, so that the production state of the single crystal 7 can be monitored more. It will be easier.
【００６７】実施の形態７．図８はこの発明のさらに別
の実施の形態による磁界印加式単結晶製造装置の構成を
示す図である。図８の磁界印加式単結晶製造装置１６０
では、上側の超電導コイル２２ａと下側の超電導コイル
２２ｂの間に液体ヘリウム１５を貯蔵したヘリウム容器
３１ｄが設けられ、上下の超電導コイル２２ａ、２２ｂ
は熱伝導部材４１ｂを介してそれぞれ液体ヘリウム１５
の寒冷で冷却される。そしてこれらは保冷容器である真
空容器１７内に収納されている。なお３３は超電導コイ
ルの巻枠である。Embodiment 7. FIG. 8 is a diagram showing the configuration of a magnetic field application type single crystal manufacturing apparatus according to still another embodiment of the present invention. Magnetic field application type single crystal manufacturing apparatus 160 of FIG.
Then, a helium container 31d storing liquid helium 15 is provided between the upper superconducting coil 22a and the lower superconducting coil 22b, and the upper and lower superconducting coils 22a, 22b are provided.
Is liquid helium 15 via the heat conducting member 41b.
Is cooled in the cold. And these are accommodated in the vacuum container 17 which is a cold container. In addition, 33 is a winding frame of a superconducting coil.
【００６８】このように構成することにより、上記実施
の形態の効果に加えてさらに、ヘリウム容器３１ｄ等の
レイアウトの自由度が向上する。With this configuration, in addition to the effects of the above-described embodiment, the degree of freedom in layout of the helium container 31d and the like is further improved.
【００６９】実施の形態８．図９はこの発明のさらに別
の実施の形態による磁界印加式単結晶製造装置の構成を
示す図である。上記実施の形態７では液体ヘリウムによ
りコイルを冷却していたが、図９の磁界印加式単結晶製
造装置１７０では、真空容器１７の外側に設けられた小
型冷凍機３５によって冷却するようにした。この場合、
小型冷凍機３５の冷却ステージ３５ａから超電導コイル
２２ａ、２２ｂの冷却のための熱伝導部材４１ｃに熱伝
導を行うための熱伝導部材４１ｄを設けている。Embodiment 8. FIG. 9 is a diagram showing the structure of a magnetic field application type single crystal manufacturing apparatus according to still another embodiment of the present invention. In the seventh embodiment, the coil is cooled by liquid helium, but in the magnetic field application type single crystal manufacturing apparatus 170 of FIG. 9, the coil is cooled by the small refrigerator 35 provided outside the vacuum container 17. in this case,
A heat conducting member 41d for conducting heat is provided from the cooling stage 35a of the small refrigerator 35 to the heat conducting member 41c for cooling the superconducting coils 22a, 22b.
【００７０】このように構成することにより、液体ヘリ
ウムの注入が不要になり、また超電導コイル２２ａ、２
２ｂのレイアウトの自由度がさらに向上する。With this structure, it is not necessary to inject liquid helium, and the superconducting coils 22a, 2
The degree of freedom of layout of 2b is further improved.
【００７１】実施の形態９．図１０はこの発明のさらに
別の実施の形態による磁界印加式単結晶製造装置の構成
を示す図である。上記実施の形態４ないし８では上下の
超電導コイルの起磁力は等しいものとして説明を行った
が、図９に示す磁界印加式単結晶製造装置１８０のよう
に上下の超電導コイル２２ａ、２２ｂのうち、上側のコ
イル２２ａの起磁力を下側のコイル２２ｂの起磁力の３
０％から７０％の範囲で小さくすることにより、カスプ
磁界の特徴である磁界の０点(磁界中心)が図１１に示す
ように上方に移動する。なおここで、上側コイルと下側
コイルの間隔はコイル平均半径に等しいとした。Ninth Embodiment FIG. 10 is a diagram showing the structure of a magnetic field application type single crystal manufacturing apparatus according to still another embodiment of the present invention. Although the upper and lower superconducting coils have the same magnetomotive force in the above fourth to eighth embodiments, the upper and lower superconducting coils 22a and 22b of the upper and lower superconducting coils 22a and 22b are the same as in the magnetic field application type single crystal manufacturing apparatus 180 shown in FIG. The magnetomotive force of the upper coil 22a is equal to that of the lower coil 22b.
By reducing the value in the range of 0% to 70%, the zero point (magnetic field center) of the magnetic field, which is a characteristic of the cusp magnetic field, moves upward as shown in FIG. Here, it is assumed that the distance between the upper coil and the lower coil is equal to the average coil radius.
【００７２】図２０に示す従来技術の説明からもわかる
ように、磁界０の点は単結晶原料融液１の表面付近に位
置させるのが通常である。このためこの実施の形態によ
れば、上側のコイル２２ａの上端をより単結晶原料融液
１の液面に近い位置に下げることができるので、真空容
器１７をさらに下方に下げることができ、これにより単
結晶引上部のルツボ２の上側から融液１の表面や単結晶
７の外観を製造装置の上部からさらに容易に監視でき
る。As can be seen from the description of the prior art shown in FIG. 20, the point of the magnetic field 0 is usually located near the surface of the single crystal raw material melt 1. Therefore, according to this embodiment, since the upper end of the upper coil 22a can be lowered to a position closer to the liquid surface of the single crystal raw material melt 1, the vacuum container 17 can be lowered further downward. Thus, the surface of the melt 1 and the appearance of the single crystal 7 can be more easily monitored from the upper side of the crucible 2 above the single crystal pulling unit from the upper side of the manufacturing apparatus.
【００７３】なお、この実施の形態は上記実施の形態４
ないし８にそれぞれに適用可能である。This embodiment is the same as the fourth embodiment.
To 8 respectively.
【００７４】[0074]
【発明の効果】以上のようにこの発明の第１の発明で
は、水平方向の磁界を与える磁界印加式単結晶製造装置
において、主コイルおよび副コイルの２対のコイルによ
り磁界を発生するようにしたので、単結晶引上部のルツ
ボ領域での磁界均一度が改善され、品質の高い大型径の
単結晶を製造可能な磁界印加式単結晶製造装置を提供で
きる等の効果が得られる。As described above, according to the first aspect of the present invention, in the magnetic field application type single crystal manufacturing apparatus for applying the horizontal magnetic field, the magnetic field is generated by the two pairs of the main coil and the sub coil. Therefore, the magnetic field uniformity in the crucible region of the upper part of the single crystal is improved, and the magnetic field application type single crystal manufacturing apparatus capable of manufacturing a high-quality large-sized single crystal can be provided.
【００７５】この発明の第２の発明では、第１の発明に
おいて主コイルおよび副コイルの直径の比および起磁力
の比を、磁界均一度が従来の鉄心付き常電導電磁石の均
一度と同等になるように設定したので、従来の製造条
件、引上げ条件を流用可能な磁界印加式単結晶製造装置
を提供できる等の効果が得られる。According to a second aspect of the present invention, in the first aspect, the diameter ratio of the main coil and the auxiliary coil and the magnetomotive force are set so that the magnetic field homogeneity is equal to that of the conventional electroconductive magnet with an iron core. Since the setting is made as described above, it is possible to obtain an effect such that a magnetic field application type single crystal manufacturing apparatus that can divert conventional manufacturing conditions and pulling conditions can be provided.
【００７６】この発明の第３の発明では、第１および第
２の発明の主コイルおよび副コイルを鞍型コイルで構成
したので、外部漏洩磁界が少なく、より小さな起磁力で
所望の磁界を発生可能な製造効率がよくかつ磁界の外部
への影響の少ない磁界印加式単結晶製造装置を提供でき
る等の効果が得られる。In the third invention of this invention, since the main coil and the sub-coil of the first and second invention are made of saddle type coils, the external leakage magnetic field is small and a desired magnetic field is generated with a smaller magnetomotive force. It is possible to provide an effect such that a magnetic field application type single crystal manufacturing apparatus having high manufacturing efficiency and little influence of the magnetic field on the outside can be provided.
【００７７】この発明の第４の発明では、第３の発明に
おいて、外側の主コイルのみを鞍型コイルで構成したの
で、効率が良くかつ低コストの磁界印加式単結晶製造装
置を提供できる等の効果が得られる。According to the fourth invention of the present invention, in the third invention, only the outer main coil is constituted by the saddle type coil, so that it is possible to provide an efficient and low-cost magnetic field application type single crystal manufacturing apparatus, etc. The effect of is obtained.
【００７８】この発明の第５の発明では、カスプ磁界を
与える方式の磁界印加式単結晶製造装置において、カス
プ磁界を発生する上下１対の超電導コイルをそれぞれ液
体冷却材を貯蔵した上下の冷却材容器に収納し、これら
の冷却材容器の間を冷却材流通用サイフォン配管で連結
するようにしたので、貯蔵する冷却材を減らすことがで
き、低コイル化が可能な磁界印加式単結晶製造装置を提
供できる等の効果が得られる。According to a fifth aspect of the present invention, in a magnetic field application type single crystal manufacturing apparatus for applying a cusp magnetic field, a pair of upper and lower superconducting coils for generating a cusp magnetic field are provided as upper and lower coolants respectively. Since it is housed in a container, and these coolant containers are connected by a siphon pipe for coolant circulation, it is possible to reduce the amount of coolant to be stored and to reduce the coil. Can be provided.
【００７９】この発明の第６の発明では、第５の発明に
おいて、下側の冷却材容器を小さくして冷却材を主に上
側の冷却材容器で貯蔵するようにしたので、さらに貯蔵
する冷却材を減らすことができる磁界印加式単結晶製造
装置を提供できる等の効果が得られる。According to the sixth aspect of the present invention, in the fifth aspect, the lower coolant container is made smaller so that the coolant is mainly stored in the upper coolant container. It is possible to obtain effects such as providing a magnetic field application type single crystal manufacturing apparatus capable of reducing the number of materials.
【００８０】この発明の第７の発明では、カスプ磁界を
与える方式の磁界印加式単結晶製造装置において、単結
晶を生成する単結晶引上部に対して、カスプ磁界を与え
る磁界発生部が低くなるように構成したので、結晶製造
中の単結晶の監視が容易な磁界印加式単結晶製造装置を
提供できる等の効果が得られる。According to the seventh aspect of the present invention, in the magnetic field application type single crystal manufacturing apparatus of the type which gives a cusp magnetic field, the magnetic field generating portion which gives the cusp magnetic field is lower than the single crystal pulling part which produces the single crystal. With such a configuration, it is possible to provide an effect such as providing a magnetic field application type single crystal manufacturing apparatus in which it is easy to monitor the single crystal during crystal manufacturing.
【００８１】この発明の第８の発明では、第７の発明に
おいて特に、カスプ磁界を発生する上下１対の超電導コ
イルの上側の超電導コイルを冷却材容器の上端に設けら
れるようにしたので、単結晶引上部に対して磁界発生部
が低くなるように構成でき、結晶製造中の単結晶の監視
が容易な磁界印加式単結晶製造装置を提供できる等の効
果が得られる。In the eighth aspect of the present invention, in particular, in the seventh aspect, the upper superconducting coil of the pair of upper and lower superconducting coils for generating the cusp magnetic field is provided at the upper end of the coolant container. It is possible to provide a magnetic field application type single crystal manufacturing apparatus which can be configured so that the magnetic field generating portion is lower than the crystal pulling portion and the single crystal can be easily monitored during crystal manufacturing.
【００８２】この発明の第９の発明では、第７の発明に
おいて特に、カスプ磁界を発生する上下１対の超電導コ
イルの下側のコイルだけを収納する冷却材容器を設け、
上側のコイルは熱伝導部材を介して冷却するようにした
ので、上側のコイルに対する冷却材容器が不要となり、
これにより単結晶引上部に対して磁界発生部が低くなる
ように構成でき、結晶製造中の単結晶の監視が容易な磁
界印加式単結晶製造装置を提供できる等の効果が得られ
る。In the ninth invention of the present invention, in particular, in the seventh invention, a coolant container for accommodating only the lower coil of a pair of upper and lower superconducting coils for generating a cusp magnetic field is provided,
Since the upper coil is cooled via the heat conducting member, a cooling material container for the upper coil is unnecessary,
Thereby, the magnetic field generating portion can be configured to be lower than the upper portion of the single crystal pulling portion, and the magnetic field applying type single crystal manufacturing apparatus which can easily monitor the single crystal during crystal manufacturing can be provided.
【００８３】この発明の第１０の発明は、第７の発明に
おいて特に、カスプ磁界を発生する上下１対の超電導コ
イルの間に冷却材容器を設け、熱伝導部材を介して上下
の超電導コイルを冷却するようにしたので、上記効果に
加えてさらに超電導コイル等のレイアウトの自由度が向
上した磁界印加式単結晶製造装置を提供できる等の効果
が得られる。The tenth invention of the present invention is, in particular, the seventh invention, in which a cooling material container is provided between a pair of upper and lower superconducting coils which generate a cusp magnetic field, and the upper and lower superconducting coils are connected via a heat conducting member. Since cooling is performed, in addition to the above effects, it is possible to provide an effect such as providing a magnetic field application type single crystal manufacturing apparatus in which the degree of freedom in layout of the superconducting coil and the like is further improved.
【００８４】この発明の第１１の発明は、第７の発明に
おいて特に、カスプ磁界を発生する上下１対の超電導コ
イルを保冷容器に収納し、この保冷容器の外部に設けら
れた小型冷凍機により熱伝導部材を介して超電導コイル
を冷却するようにしたので、上記効果に加えてさらに超
電導コイル等のレイアウトの自由度が向上し、さらに液
体ヘリウムの注入が不要な、便利な磁界印加式単結晶製
造装置を提供できる等の効果が得られる。The eleventh invention of the present invention is, in particular, the seventh invention, in which a pair of upper and lower superconducting coils for generating a cusp magnetic field is housed in a cold insulation container, and a small refrigerator provided outside the cold insulation container is used. Since the superconducting coil is cooled via the heat conducting member, in addition to the above effects, the degree of freedom in layout of the superconducting coil etc. is further improved, and a convenient magnetic field application type single crystal that does not require liquid helium injection The effect that a manufacturing apparatus can be provided is acquired.
【００８５】この発明の第１２の発明では、上記第５な
いし１１の発明において、上側の超電導コイルの起磁力
を下側の超電導コイルの起磁力の７０％から３０％の範
囲とし、カスプ磁界の０点を上方に移動させるようにし
たので、さらに単結晶引上部に対して磁界発生部が低く
なるように構成でき、結晶製造中の単結晶の監視が容易
な磁界印加式単結晶製造装置を提供できる等の効果が得
られる。According to a twelfth aspect of the present invention, in the fifth to eleventh aspects, the magnetomotive force of the upper superconducting coil is set within the range of 70% to 30% of the magnetomotive force of the lower superconducting coil, and the cusp magnetic field is reduced. Since the zero point is moved upward, the magnetic field generating unit can be configured to be lower than the upper portion of the single crystal, and a magnetic field application type single crystal manufacturing apparatus that can easily monitor the single crystal during crystal manufacturing is provided. The effect that it can be provided can be obtained.
【図１】 この発明の実施の形態１による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 1 is a diagram showing a configuration of a magnetic field application type single crystal manufacturing apparatus according to a first embodiment of the present invention.
【図２】 実施の形態１の副コイルによる磁界均一度改
善の効果を説明するための図である。FIG. 2 is a diagram for explaining the effect of improving the magnetic field uniformity by the sub coil according to the first embodiment.
【図３】 この発明の実施の形態２による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 3 is a diagram showing a configuration of a magnetic field application type single crystal manufacturing apparatus according to a second embodiment of the present invention.
【図４】 この発明の実施の形態３による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 4 is a diagram showing a configuration of a magnetic field application type single crystal manufacturing apparatus according to a third embodiment of the present invention.
【図５】 この発明の実施の形態４による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 5 is a diagram showing a configuration of a magnetic field application type single crystal manufacturing apparatus according to a fourth embodiment of the present invention.
【図６】 この発明の実施の形態５による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 6 is a diagram showing a configuration of a magnetic field application type single crystal manufacturing apparatus according to a fifth embodiment of the present invention.
【図７】 この発明の実施の形態６による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 7 is a diagram showing a structure of a magnetic field application type single crystal manufacturing apparatus according to a sixth embodiment of the present invention.
【図８】 この発明の実施の形態７による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 8 is a diagram showing a configuration of a magnetic field application type single crystal manufacturing apparatus according to a seventh embodiment of the present invention.
【図９】 この発明の実施の形態８による磁界印加式単
結晶製造装置の構成を示す図である。FIG. 9 is a diagram showing a structure of a magnetic field application type single crystal manufacturing apparatus according to an eighth embodiment of the present invention.
【図１０】 この発明の実施の形態９による磁界印加式
単結晶製造装置の構成を示す図である。FIG. 10 is a diagram showing a structure of a magnetic field application type single crystal manufacturing apparatus according to a ninth embodiment of the present invention.
【図１１】 実施の形態９の磁界中心の上方へのずれを
説明するための図である。FIG. 11 is a diagram for explaining an upward shift of the magnetic field center according to the ninth embodiment.
【図１２】 従来の単結晶製造装置の一例を示す構成図
である。FIG. 12 is a configuration diagram showing an example of a conventional single crystal manufacturing apparatus.
【図１３】 磁場印加による従来の単結晶製造装置の一
例を示す構成図である。FIG. 13 is a configuration diagram showing an example of a conventional single crystal manufacturing apparatus by applying a magnetic field.
【図１４】 超電導マグネットを備えた従来の単結晶製
造装置の一例を示す正面図である。FIG. 14 is a front view showing an example of a conventional single crystal manufacturing apparatus provided with a superconducting magnet.
【図１５】 図１４の単結晶製造装置の上面図である。15 is a top view of the single crystal manufacturing apparatus of FIG.
【図１６】 超電導マグネットを備えた従来の単結晶製
造装置の別の例を示す正面図である。FIG. 16 is a front view showing another example of a conventional single crystal manufacturing apparatus equipped with a superconducting magnet.
【図１７】 図１６の単結晶製造装置の上面図である。17 is a top view of the single crystal manufacturing apparatus of FIG.
【図１８】 従来の単結晶製造装置の別の例を示す正面
図である。FIG. 18 is a front view showing another example of a conventional single crystal manufacturing apparatus.
【図１９】 カスプ磁界を与えた単結晶製造装置のルツ
ボとルツボ内の融液の状態の一例を示す図である。FIG. 19 is a diagram showing an example of the state of the crucible of the single crystal manufacturing apparatus to which a cusp magnetic field is applied and the melt in the crucible.
【図２０】 カスプ磁界を与えた単結晶製造装置のルツ
ボとルツボ内の融液の状態の別の例を示す図である。FIG. 20 is a diagram showing another example of the state of the crucible of the single crystal manufacturing apparatus to which a cusp magnetic field is applied and the melt in the crucible.
１ 単結晶原料融液、２ ルツボ、３ ヒータ、４ 種
結晶、７ 単結晶、１５ 液体ヘリウム、１７ 真空容
器、２１ａ 超電導主コイル、２１ｂ 超電導副コイ
ル、２１ａａ 鞍型の超電導主コイル、２１ｂａ 鞍型
の超電導副コイル、２２ａ，２２ｂ 超電導コイル、３
１，３１ａ，３１ｂ，３１ｃ，３１ｄ ヘリウム容器、
３２ａ，３２ｂ ヘリウム流通用サイフォン配管、３３
巻枠、３５ 小型冷凍機、３５ａ 冷却ステージ、４
１，４１ａ，４１ｂ，４１ｃ，４１ｄ 熱伝導部材、１
００〜１８０ 磁界印加式単結晶製造装置。1 single crystal raw material melt, 2 crucible, 3 heater, 4 seed crystal, 7 single crystal, 15 liquid helium, 17 vacuum vessel, 21a superconducting main coil, 21b superconducting auxiliary coil, 21aa saddle type superconducting main coil, 21ba saddle type Superconducting sub-coils, 22a, 22b superconducting coils, 3
1, 31a, 31b, 31c, 31d Helium container,
32a, 32b Siphon piping for helium distribution, 33
Reel, 35 small refrigerator, 35a cooling stage, 4
1, 41a, 41b, 41c, 41d Heat conduction member, 1
00-180 Magnetic field application type single crystal manufacturing apparatus.
フロントページの続き (56)参考文献 特開 昭58−217493（ＪＰ，Ａ) 特開 昭61−222984（ＪＰ，Ａ) 特開 昭62−212290（ＪＰ，Ａ) 特開 昭63−79789（ＪＰ，Ａ) 特開 平４−361526（ＪＰ，Ａ) 特開 平９−118584（ＪＰ，Ａ) 特公 平３−61630（ＪＰ，Ｂ２) 特公 平５−59875（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 Continuation of the front page (56) Reference JP-A-58-217493 (JP, A) JP-A-61-222984 (JP, A) JP-A-62-212290 (JP, A) JP-A-63-79789 (JP , A) JP-A-4-361526 (JP, A) JP-A-9-118584 (JP, A) JP-B 3-61630 (JP, B2) JP-B 5-59875 (JP, B2) (58) Fields investigated (Int.Cl. 7 , DB name) C30B 1/00-35/00
Claims (12)
結晶を挿入し、この結晶を引き上げることにより単結晶
を生成する単結晶引上部と、 上記単結晶原料融液部に水平方向の磁界を与えるための
磁界発生部と、 を備え、 上記磁界発生部が、上記結晶引上部の両側に設けられた
一対の主コイル、およびこれらの主コイルより直径が小
さく同軸で励磁方向が逆の一対の副コイルを含むことを
特徴とする磁界印加式単結晶製造装置。1. A single crystal pulling part for producing a single crystal by inserting a seed crystal into a single crystal raw material melt filled in a crucible, and a horizontal direction in the single crystal raw material melt part. A magnetic field generating section for giving a magnetic field; and the magnetic field generating section, wherein the magnetic field generating section has a pair of main coils provided on both sides of the crystal pulling upper part, and a coil having a diameter smaller than those of the main coils and having opposite excitation directions. A magnetic field application type single crystal manufacturing apparatus comprising a pair of sub-coils.
それぞれ超電導コイルからなり、上記副コイルの直径が
主コイルの直径の０.３倍から０.６倍の範囲で、その起
磁力が主コイルの０.３倍から１.０倍の範囲であること
を特徴とする請求項１に記載の磁界印加式単結晶製造装
置。2. The main coil and the sub-coil of the magnetic field generator are made of superconducting coils, and the magnetomotive force of the sub-coil is 0.3 to 0.6 times the diameter of the main coil. The magnetic field application type single crystal manufacturing apparatus according to claim 1, wherein the main coil has a range of 0.3 times to 1.0 times.
ボ側に湾曲した鞍型コイルであることを特徴とする請求
項１または２に記載の磁界印加式単結晶製造装置。3. The magnetic field application type single crystal manufacturing apparatus according to claim 1, wherein the main coil and the sub coil are saddle type coils curved toward the crucible side.
鞍型コイルとしたことを特徴とする請求項１または２に
記載の磁界印加式単結晶製造装置。4. The magnetic field application type single crystal manufacturing apparatus according to claim 1, wherein only the main coil is a saddle type coil that is curved toward the crucible side.
結晶を挿入し、この結晶を引き上げることにより単結晶
を生成する単結晶引上部と、 上記単結晶原料融液部にカスプ磁界を与える磁界発生部
と、 を備え、 上記磁界発生部が、上記単結晶原料融液部にカスプ磁界
を与えるために上記単結晶引上部の周囲に沿って巻回さ
れた上下１対の超電導コイル、これらの超電導コイルを
それぞれに液体冷却材で冷却して収納する上下の冷却材
容器、これらの冷却材容器の間を連結する冷却材流通用
サイフォン配管、およびこれらを収納する保冷容器、 を備えたことを特徴とする磁界印加式単結晶製造装置。5. A cusp magnetic field is applied to a single crystal pulling portion that inserts a seed crystal into a single crystal raw material melt filled in a crucible and pulls this crystal to form a single crystal, and the single crystal raw material melt portion. A magnetic field generating section for applying the magnetic field, wherein the magnetic field generating section is a pair of upper and lower superconducting coils wound along the periphery of the single crystal pulling upper part in order to apply a cusp magnetic field to the single crystal raw material melt section, Each of these superconducting coils was provided with upper and lower coolant containers that are cooled by a liquid coolant and housed therein, a siphon piping for coolant distribution that connects these coolant containers, and a cold container that houses these. A magnetic field application type single crystal manufacturing apparatus characterized by the above.
器に比べて小さくし、主に上側の冷却材容器に液体冷却
材を貯蔵させたことを特徴とする請求項５に記載の磁界
印加式単結晶製造装置。6. The cooling medium container of the lower side is made smaller than the cooling medium container of the upper side, and the liquid cooling medium is mainly stored in the upper cooling medium container. Magnetic field application type single crystal manufacturing equipment.
結晶を挿入し、この結晶を引き上げることにより単結晶
を生成する単結晶引上部と、 上記単結晶原料融液部にカスプ磁界を与える磁界発生部
と、 を備え、 上記磁界発生部が、上記単結晶原料融液部にカスプ磁界
を与えるために上記単結晶引上部の周囲に沿って巻回さ
れた上下１対の超電導コイル、これらの超電導コイルを
冷却する冷却手段、およびこれらを冷却状態を維持する
保冷容器からなり、上記保冷容器が上記単結晶引上部に
対してより低い位置になるように、上記単結晶原料融液
部の位置からその位置が決まる上記超電導コイルの上側
の超電導コイルを上記保冷容器のより上側に収納するよ
うにしたことを特徴とする磁界印加式単結晶製造装置。7. A single crystal pulling part for producing a single crystal by inserting a seed crystal into a single crystal raw material melt filled in a crucible and a cusp magnetic field to the single crystal raw material melt part. A magnetic field generating section for applying the magnetic field, wherein the magnetic field generating section is a pair of upper and lower superconducting coils wound along the periphery of the single crystal pulling upper part in order to apply a cusp magnetic field to the single crystal raw material melt section, A cooling means for cooling these superconducting coils, and a cold insulation container for maintaining them in a cooled state, so that the cold insulation container is at a lower position with respect to the single crystal pulling upper part, the single crystal raw material melt part The magnetic field application type single crystal manufacturing apparatus characterized in that the superconducting coil above the superconducting coil whose position is determined from the position is housed above the cold insulating container.
と共に上記超電導コイルを収納した冷却材容器と、この
冷却材容器内に設けられた熱伝導部材と、からなり、上
記液体冷却材の液面が上側と下側の超電導コイルの間に
あり、上側の超電導コイルが上記冷却材容器内の上端に
設けられ、下側の超電導コイルが上記液体冷却材に満た
されて冷却され、上側の超電導コイルが上記熱伝導部材
を介して上記液体冷却材により冷却され、上記保冷容器
が上記冷却材容器を収納することを特徴とする請求項７
に記載の磁界印加式単結晶製造装置。8. The cooling means comprises a coolant container storing the liquid coolant and containing the superconducting coil, and a heat conducting member provided in the coolant container. The liquid surface is between the upper and lower superconducting coils, the upper superconducting coil is provided at the upper end in the coolant container, the lower superconducting coil is filled with the liquid coolant and cooled, 8. The superconducting coil is cooled by the liquid coolant via the heat conducting member, and the cold insulation container houses the coolant container.
The magnetic field application type single crystal manufacturing apparatus according to.
下側の超電導コイルを収納した冷却材容器と、この冷却
材容器の温度を上側の超電導コイルに伝える熱伝導部材
と、からなり、上記保冷容器がこれらを収納することを
特徴とする請求項７に記載の磁界印加式単結晶製造装
置。9. The cooling means comprises a coolant container that stores a liquid coolant and accommodates a lower superconducting coil, and a heat conducting member that transmits the temperature of the coolant container to the upper superconducting coil. The magnetic field application type single crystal manufacturing apparatus according to claim 7, wherein the cold storage container stores these.
の超電導コイルの間に設けられ液体冷却材を貯蔵した冷
却材容器と、この冷却材容器の温度を上側および下側の
超電導コイルのそれぞれに伝える熱伝導部材と、からな
り、上記保冷容器がこれらを収納することを特徴とする
請求項７に記載の磁界印加式単結晶製造装置。10. A cooling medium container in which the cooling means is provided between the upper and lower superconducting coils and stores a liquid coolant, and the temperature of the cooling medium container is controlled in each of the upper and lower superconducting coils. The magnetic field application type single crystal manufacturing apparatus according to claim 7, further comprising: a heat conduction member that transmits the heat conduction member to the cold storage container.
冷却するための冷凍機と、この冷凍機の温度を上側およ
び下側の超電導コイルのそれぞれに伝える熱伝導部材
と、からなり、上記保冷容器が上記上側および下側の超
電導コイル並びに上記熱伝導部材を収納することを特徴
とする請求項７に記載の磁界印加式単結晶製造装置。11. The cooling means comprises a refrigerator for cooling the superconducting coil, and a heat conductive member for transmitting the temperature of the refrigerator to each of the upper and lower superconducting coils. The magnetic field application type single crystal manufacturing apparatus according to claim 7, wherein the upper and lower superconducting coils and the heat conducting member are housed.
側の超電導コイルの起磁力の７０％から３０％の範囲と
し、上記カスプ磁界の０点を上方に移動させたことを特
徴とする請求項５ないし１１のいずれかに記載の磁界印
加式単結晶製造装置。12. The magnetomotive force of the upper superconducting coil is set in the range of 70% to 30% of the magnetomotive force of the lower superconducting coil, and the zero point of the cusp magnetic field is moved upward. 12. A magnetic field application type single crystal manufacturing apparatus according to any one of items 5 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16012396A JP3535312B2 (en) | 1996-06-20 | 1996-06-20 | Magnetic field application type single crystal manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16012396A JP3535312B2 (en) | 1996-06-20 | 1996-06-20 | Magnetic field application type single crystal manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH107486A JPH107486A (en) | 1998-01-13 |
| JP3535312B2 true JP3535312B2 (en) | 2004-06-07 |
Family
ID=15708372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16012396A Expired - Fee Related JP3535312B2 (en) | 1996-06-20 | 1996-06-20 | Magnetic field application type single crystal manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3535312B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10102126A1 (en) * | 2001-01-18 | 2002-08-22 | Wacker Siltronic Halbleitermat | Method and device for producing a single crystal from silicon |
| JP2007220907A (en) * | 2006-02-16 | 2007-08-30 | Japan Superconductor Technology Inc | Superconductive magnet equipment and its operation method |
| KR100954291B1 (en) * | 2008-01-21 | 2010-04-26 | 주식회사 실트론 | Apparatus for manufacturing high-quality semiconductor single crystal ingot and Method using the same |
| JP4990194B2 (en) * | 2008-03-07 | 2012-08-01 | 株式会社神戸製鋼所 | Magnet position measurement method |
| JP5889509B2 (en) * | 2008-05-26 | 2016-03-22 | 株式会社東芝 | Superconducting magnet device for single crystal pulling device |
| CN103952752A (en) * | 2014-04-03 | 2014-07-30 | 西安理工大学 | Magnetic shielding structure of single crystal furnace |
| CN116031040B (en) * | 2023-02-24 | 2023-06-20 | 安徽联效科技有限公司 | Superconducting magnet for magnetic control Czochralski single crystal and refrigerating method |
-
1996
- 1996-06-20 JP JP16012396A patent/JP3535312B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH107486A (en) | 1998-01-13 |
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