JP3533363B2 - Lead frame and semiconductor device - Google Patents
Lead frame and semiconductor deviceInfo
- Publication number
- JP3533363B2 JP3533363B2 JP2000180858A JP2000180858A JP3533363B2 JP 3533363 B2 JP3533363 B2 JP 3533363B2 JP 2000180858 A JP2000180858 A JP 2000180858A JP 2000180858 A JP2000180858 A JP 2000180858A JP 3533363 B2 JP3533363 B2 JP 3533363B2
- Authority
- JP
- Japan
- Prior art keywords
- recess
- heat dissipation
- dissipation plate
- semiconductor element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明はリードフレーム及び
半導体装置に関し、更に詳細には矩形状の半導体素子が
搭載される放熱板と、前記放熱板に搭載された半導体素
子とワイヤ等によって電気的に接続されるインナーリー
ドとを具備するリードフレーム及び半導体装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame and a semiconductor device, and more particularly, to a heat dissipation plate on which a rectangular semiconductor element is mounted, and a semiconductor element mounted on the heat dissipation plate and an electric wire electrically. The present invention relates to a lead frame and a semiconductor device having inner leads to be connected.
【０００２】[0002]
【従来の技術】半導体装置には、図７（ａ）（ｂ）に示
す半導体装置がある。図７（ａ）に示す半導体装置は、
放熱板１０２に搭載された半導体素子１００と、放熱板
１０２に接着テープ１０６によって接着されたインナー
リード１０４，１０４・・とが、ワイヤ１０８，１０８
・・によって電気的に接続されていると共に、半導体素
子１００及び放熱板１０２等が封止樹脂によって封止さ
れている。また、図７（ｂ）に示す半導体装置は、図７
（ａ）に示す半導体装置と同様に、放熱板１１０の一面
に搭載された半導体素子１００と、放熱板１１０に接着
テープ１０６によって接着されたインナーリード１０
４，１０４・・とが、ワイヤ１０８，１０８・・によっ
て電気的に接続されていると共に、半導体素子１００が
封止樹脂によって封止されているが、放熱板１１０の他
面（半導体素子１００の搭載面に対して反対面）が封止
樹脂の表面から露出している。2. Description of the Related Art As a semiconductor device, there is a semiconductor device shown in FIGS. The semiconductor device shown in FIG.
The semiconductor element 100 mounted on the heat dissipation plate 102 and the inner leads 104, 104 ... Adhering to the heat dissipation plate 102 with the adhesive tape 106 form the wires 108, 108.
. Are electrically connected, and the semiconductor element 100, the heat dissipation plate 102, and the like are sealed with a sealing resin. Further, the semiconductor device shown in FIG.
Similar to the semiconductor device shown in (a), the semiconductor element 100 mounted on one surface of the heat dissipation plate 110 and the inner lead 10 adhered to the heat dissipation plate 110 with the adhesive tape 106.
, 104 are electrically connected to each other by wires 108, 108, ... And the semiconductor element 100 is sealed by a sealing resin. The surface opposite to the mounting surface) is exposed from the surface of the sealing resin.
【０００３】[0003]
【発明が解決しようとする課題】この様に、図７（ｂ）
に示す半導体装置は、放熱板１１０の他面が封止樹脂の
表面から露出しているため、放熱板１０２の全面が封止
樹脂によって封止されている図７（ａ）に示す半導体装
置よりも放熱性が良好である。しかし、他面が封止樹脂
の表面から露出する放熱板１１０は、封止樹脂によって
全面が封止される放熱板１０２よりも厚く形成されてい
るため、個々に所定形状に形成することを要する。更
に、組立ての際にも、放熱板１１０を個々に位置決めを
行うことを要する。したがって、放熱板１１０の加工時
間及び組立て時間が、放熱板１０２の加工時間及び組立
て時間に比較して長く、図７（ｂ）に示す半導体装置の
生産性は、図７（ａ）に示す半導体装置よりも劣る。The problem to be solved by the invention is shown in FIG.
Since the other surface of the heat dissipation plate 110 is exposed from the surface of the encapsulation resin in the semiconductor device shown in FIG. 7, the semiconductor device shown in FIG. Also has good heat dissipation. However, since the heat dissipation plate 110 whose other surface is exposed from the surface of the sealing resin is formed thicker than the heat dissipation plate 102 whose entire surface is sealed by the sealing resin, it is necessary to individually form the heat dissipation plate 110 into a predetermined shape. . Further, it is necessary to position the heat sink 110 individually during assembly. Therefore, the processing time and the assembling time of the heat sink 110 are longer than the processing time and the assembling time of the heat sink 102, and the productivity of the semiconductor device shown in FIG. 7B is the same as that of the semiconductor shown in FIG. Inferior to the device.
【０００４】このため、本発明者は、図７（ｂ）に示す
半導体装置よりも良好な生産性を奏し得る図７（ａ）に
示す半導体装置の放熱性を改良すべく、図８に示す半導
体装置の試作を試みた。図８に示す半導体装置は、放熱
板２００に絞り加工を施して形成した凹部の底面に半導
体素子１００を搭載すると共に、その凹部の底面に対応
する放熱板２００の表面を封止樹脂の表面から露出する
ものである。かかる放熱板２００の凹部２０２の底面
は、図９に示す様に、搭載される矩形の半導体素子１０
０と相似形の矩形状であるため、凹部２００には角部Ａ
が四箇所に形成される。ところで、凹部２０２が浅い場
合には、絞り加工によって容易に凹部２０２を形成でき
るが、図８に示す様に、凹部２０２の底面に対応する放
熱板２００の表面を封止樹脂の表面から露出するには、
深い凹部２０２を形成することが必要である。しかしな
がら、放熱板２００の表面が封止樹脂の表面から露出す
るような深い凹部２０２を、絞り加工によって形成する
ことは極めて困難である。また、放熱板２００の表面を
封止樹脂の表面から露出するため、放熱板２００と封止
樹脂層を形成する封止樹脂との密着程度が低下し、放熱
板２００と封止樹脂とが剥離し易くなる。そこで、本発
明の課題は、半導体素子が搭載される搭載面が底面に形
成された凹部であって、通常の絞り加工では形成困難な
程度に深い凹部を、絞り加工によって放熱板に容易に形
成でき、且つ放熱板と封止樹脂との剥離を効果的に防止
できるリードフレーム及び半導体装置を提供することに
ある。Therefore, the present inventor has shown in FIG. 8 in order to improve the heat dissipation of the semiconductor device shown in FIG. 7A, which can achieve better productivity than the semiconductor device shown in FIG. 7B. An attempt was made to fabricate a semiconductor device. In the semiconductor device shown in FIG. 8, the semiconductor element 100 is mounted on the bottom surface of the recess formed by drawing the heat dissipation plate 200, and the surface of the heat dissipation plate 200 corresponding to the bottom surface of the recess is removed from the surface of the sealing resin. It is exposed. As shown in FIG. 9, the bottom surface of the recess 202 of the heat dissipation plate 200 has a rectangular semiconductor element 10 to be mounted.
Since it has a rectangular shape similar to 0, the concave portion 200 has a corner A
Are formed in four places. By the way, when the recess 202 is shallow, the recess 202 can be easily formed by drawing. However, as shown in FIG. 8, the surface of the heat sink 200 corresponding to the bottom of the recess 202 is exposed from the surface of the sealing resin. Has
It is necessary to form a deep recess 202. However, it is extremely difficult to form a deep recess 202 in which the surface of the heat dissipation plate 200 is exposed from the surface of the sealing resin by drawing. Further, since the surface of the heat dissipation plate 200 is exposed from the surface of the encapsulation resin, the degree of close contact between the heat dissipation plate 200 and the encapsulation resin forming the encapsulation resin layer is reduced, and the heat dissipation plate 200 and the encapsulation resin are separated from each other. Easier to do. Therefore, an object of the present invention is to form a recess in which a mounting surface on which a semiconductor element is mounted is formed on the bottom surface and which is deep enough to be difficult to form by ordinary drawing, and which is easily formed in the heat sink by drawing. (EN) It is possible to provide a lead frame and a semiconductor device which can be effectively prevented from peeling off the heat dissipation plate and the sealing resin.
【０００５】[0005]
【課題を解決するための手段】本発明者は、前記課題を
解決すべく検討した結果、予め凹部２０２の角部Ａに形
成される部分を打ち抜いた放熱板用板体に絞り加工を施
すことによって、所望深さの凹部を形成することができ
ることを知り、本発明に到達した。すなわち、本発明
は、矩形状の半導体素子が搭載される放熱板と、前記放
熱板に搭載された半導体素子とワイヤ等によって電気的
に接続されるインナーリードとを具備するリードフレー
ムにおいて、該放熱板の半導体素子が搭載される搭載面
が、絞り加工によって形成された矩形状の凹部の底面に
形成され、且つ前記凹部の各角部の内壁部を形成する曲
折部分が、抜き落とされて貫通孔に形成されていると共
に、前記凹部の直線部の内壁部を形成する曲折部分が部
分的に抜き落とされて形成された貫通孔又はスリット内
に、前記凹部の底部の一部が張り出した張出部が形成さ
れていることを特徴とするリードフレームにある。ま
た、本発明は、矩形状の半導体素子が搭載された放熱板
と、前記放熱板に搭載された半導体素子とワイヤ等によ
って電気的に接続されたインナーリードとが、封止樹脂
によって封止された半導体装置において、該半導体素子
が、前記放熱板に絞り加工によって形成された矩形状の
凹部の底面に搭載され、且つ前記凹部の各角部の内壁部
を形成する曲折部分が、抜き落とされて貫通孔に形成さ
れていると共に、前記凹部の直線部の内壁部を形成する
曲折部分が部分的に抜き落とされて形成された貫通孔又
はスリット内に、前記凹部の底部の一部が張り出した張
出部が形成されていることを特徴とする半導体装置にあ
る。Means for Solving the Problems As a result of studies to solve the above problems, the present inventor performs a drawing process on a radiator plate body in which a portion formed in a corner A of a recess 202 is punched out in advance. As a result, they have found that a recess having a desired depth can be formed, and have reached the present invention. That is, the present invention provides a heat dissipation plate in which a rectangular semiconductor element is mounted and an inner lead electrically connected to the semiconductor element mounted in the heat dissipation plate by a wire or the like. The mounting surface of the plate on which the semiconductor element is mounted is formed on the bottom surface of the rectangular recess formed by drawing, and the bent portion forming the inner wall of each corner of the recess is withdrawn and penetrates. co When formed in the hole
The bent portion forming the inner wall of the straight portion of the recess is
Inside a through-hole or slit formed by being partially pulled out
Is formed with an overhanging part where part of the bottom of the recess is overhanging.
The lead frame is characterized by being Further, according to the present invention, a heat dissipation plate on which a rectangular semiconductor element is mounted and an inner lead electrically connected to the semiconductor element mounted on the heat dissipation plate by a wire or the like are sealed with a sealing resin. In the semiconductor device, the semiconductor element is mounted on the bottom surface of a rectangular recess formed in the heat dissipation plate by drawing, and the bent portion forming the inner wall of each corner of the recess is removed. Is formed in the through hole and forms the inner wall portion of the straight portion of the recess.
A through hole or a through hole formed by partially bending off the bent portion.
Is a stretched part of the bottom of the recess that protrudes into the slit.
The semiconductor device is characterized in that the projecting portion is formed .
【０００６】かかる本発明において、凹部の底面に対応
する放熱板の表面を、封止樹脂の表面から露出すること
によって、半導体装置の放熱性を向上できる。更に、矩
形状の半導体素子が搭載される放熱板を、インナーリー
ドと別体に形成した放熱板とし、前記放熱板とインナー
リードの先端部とを接着テープ等の接着部材によって接
着して一体化することにより、インナーリード等の製造
とは別に、放熱板の製造を行うことができ、両者を効率
的に製造できる。[0006] Te according present invention smell, the surface of the heat radiating plate that corresponds to the bottom surface of the recessed portion, by exposing the surface of the sealing resin, can improve heat dissipation of the semiconductor device. Further, the heat dissipation plate on which the rectangular semiconductor element is mounted is a heat dissipation plate formed separately from the inner lead, and the heat dissipation plate and the tip of the inner lead are bonded and integrated by an adhesive member such as an adhesive tape. By doing so, the heat sink can be manufactured separately from the manufacturing of the inner leads and the like, and both can be manufactured efficiently.
【０００７】一般的に、絞り加工によって形成された矩
形状の凹部の内壁部は、その面が傾斜面に形成されてい
る。このため、深い凹部を絞り加工によって形成する場
合には、凹部の内壁部を可及的に直角に近づけることが
必要である。この点、本発明では、矩形状の凹部の各角
部の内壁部を形成する曲折部分を抜き落として貫通孔に
形成することによって、絞り加工の際に、凹部の内壁部
を可及的に直角に曲折できる。その結果、従来、絞り加
工では形成困難な深い凹部を、絞り加工によって形成可
能となった。このため、搭載された半導体素子等を封止
する封止樹脂の表面から凹部の底面に対応する放熱板の
表面が露出する程度の深い凹部を、絞り加工によって放
熱板に形成できる。更に、この凹部に形成された貫通孔
を介し、放熱板の上下面の封止樹脂が連結され、放熱板
と封止樹脂との剥離を防止できる。また、凹部の直線部
の内壁部を形成する曲折部分を、部分的に抜き落として
貫通孔又はスリットに形成することによって、深い凹部
を絞り加工によって更に容易に形成でき、放熱板と封止
樹脂との剥離を更に防止できる。その上、貫通孔又はス
リット内に、凹部の底部の一部を張り出して形成された
張出部が、前記貫通孔又はスリットを介して放熱板の上
下面の封止樹脂に食い込むアンカー効果を奏するため、
放熱板と封止樹脂との密着性を更に向上できる。 Generally, the inner wall of the rectangular recess formed by drawing has an inclined surface. Therefore, when forming a deep recess by drawing, it is necessary to make the inner wall of the recess as close to the right angle as possible. In this respect, according to the present invention, the bent portion forming the inner wall portion of each corner of the rectangular recess is removed to form the through hole, so that the inner wall portion of the recess is reduced as much as possible during drawing. Can be bent at a right angle. As a result, it has become possible to form deep recesses that have been difficult to form by conventional drawing. Therefore, a deep recess can be formed in the heat sink by drawing to the extent that the surface of the heat sink that corresponds to the bottom surface of the recess is exposed from the surface of the sealing resin that seals the mounted semiconductor element and the like. Furthermore, the sealing resin on the upper and lower surfaces of the heat dissipation plate is connected through the through hole formed in this recess, and peeling between the heat dissipation plate and the sealing resin can be prevented. Also, the straight part of the recess
Part of the bent part that forms the inner wall of the
By forming through holes or slits, deep recesses
Can be formed more easily by drawing and seals with the heat sink
Further, peeling from the resin can be prevented. In addition, through holes or
Formed by protruding part of the bottom of the recess inside the rit
The overhang is located above the heat sink through the through hole or slit.
Since it has an anchor effect that bites into the sealing resin on the bottom surface,
The adhesiveness between the heat sink and the sealing resin can be further improved.
【０００８】[0008]
【発明の実施の形態】本発明に係るリードフレームの一
例を図１に示す。図１に示すリードフレーム１０は、半
導体素子１２が搭載される放熱板１８と、放熱板１８の
周縁部２０の平坦面に接着テープ２２によって先端部が
接着されたインナーリード２４，２４・・とから構成さ
れる。かかる放熱板１８の略中央部には、矩形状の凹部
１６が形成されており、凹部１６の底面１４に半導体素
子１２が搭載される。この凹部１６には、図２に示す様
に、凹部１６の各角部の内壁部を形成する曲折部分が、
抜き落とされて貫通孔２６，２６，２６，２６に形成さ
れている。この様に、凹部１６の各角部に貫通孔２６，
２６・・を形成することにより、絞り加工によって深い
凹部１６を容易に形成できる。つまり、通常、矩形状の
凹部１６を絞り加工によって形成する際には、凹部１６
の内壁部の面が傾斜面に形成されるが、凹部１６の各角
部の内壁部を形成する曲折部分を抜き落として貫通孔２
６に形成することによって、絞り加工により凹部１６の
内壁部を可及的に直角に形成できる。1 shows an example of a lead frame according to the present invention. The lead frame 10 shown in FIG. 1 includes a heat dissipation plate 18 on which the semiconductor element 12 is mounted, and inner leads 24, 24, ... whose tip ends are adhered to a flat surface of a peripheral edge portion 20 of the heat dissipation plate 18 with an adhesive tape 22. Composed of. A rectangular recess 16 is formed in the approximate center of the heat dissipation plate 18, and the semiconductor element 12 is mounted on the bottom surface 14 of the recess 16. As shown in FIG. 2, the concave portion 16 has a bent portion forming the inner wall portion of each corner of the concave portion 16,
It is pulled out and formed in the through holes 26, 26, 26, 26. In this way, the through holes 26,
By forming 26 ..., The deep recess 16 can be easily formed by drawing. That is, normally, when the rectangular recess 16 is formed by drawing, the recess 16 is formed.
The surface of the inner wall of the recess 16 is formed into an inclined surface, but the bent portion forming the inner wall of each corner of the recess 16 is pulled out and the through hole 2 is formed.
By forming the groove 6 on the inner wall of the concave portion 16, the inner wall portion of the concave portion 16 can be formed at a right angle as much as possible.
【０００９】図１及び図２に示す凹部１６の直線部の内
壁部を形成する曲折部分にも貫通孔２８，２８・・が形
成されている。このため、凹部１６を形成する絞り加工
の際に、凹部１６の直線部の内壁部を更に一層直角に形
成し易くなり、更に深い凹部を形成できる。凹部１６の
内壁部に形成された貫通孔２６，２８は、図３（ａ）
（ｂ）に示す様に、凹部１６の底面１４と周縁部２０と
の間の内壁部を形成する曲折部分を打ち抜いて形成され
ている。この貫通孔２６，２８の形状は、図４（ａ）
（ｂ）に示す形状であってもよい。図４（ａ）（ｂ）に
示す貫通孔２６，２８内には、凹部１６の底部の一部が
張り出した張出部３０に形成されている。かかる張出部
３０は、後述する様に、貫通孔２６，２８を介して放熱
板１８の上下面の封止樹脂に食い込むアンカー効果を奏
するため、放熱板１８と封止樹脂との密着性を更に向上
できる。尚、図２に示す様に、凹部１６の直線部の内壁
部を形成する曲折部分が、部分的にスリット状に抜き落
とされてスリット２８ａに形成されていてもよい。Through holes 28, 28, ... Are also formed in the bent portion forming the inner wall portion of the straight portion of the recess 16 shown in FIGS. Therefore, during the drawing process for forming the recess 16, it becomes easier to form the inner wall portion of the linear portion of the recess 16 at a more right angle, and a deeper recess can be formed. The through holes 26 and 28 formed in the inner wall of the recess 16 are shown in FIG.
As shown in (b), the bent portion that forms the inner wall portion between the bottom surface 14 of the recess 16 and the peripheral edge portion 20 is punched out. The shapes of the through holes 26 and 28 are shown in FIG.
It may have the shape shown in FIG. In the through holes 26 and 28 shown in FIGS. 4A and 4B, a part of the bottom of the recess 16 is formed as an overhanging part 30. As will be described later, the overhanging portion 30 has an anchor effect of biting into the sealing resin on the upper and lower surfaces of the heat dissipation plate 18 through the through holes 26 and 28, so that the adhesion between the heat dissipation plate 18 and the sealing resin is improved. It can be further improved. Incidentally, as shown in FIG. 2, bent portion forming the inner wall portion of the straight portion of the recess 16, partially are dropped vent in a slit shape may be formed in the slit 28 a.
【００１０】この様な貫通孔２６，２８が形成された凹
部１６を、放熱板用板体に絞り加工によって形成するに
は、先ず、放熱板用板体の凹部１６の角部及び直線部の
内壁部が形成される部分を打ち抜いて貫通孔２６，２８
を形成した後、この放熱板用板体に絞り加工を施して所
定深さの凹部１６を形成する。この際、複数個の放熱板
用板体をシート状に連結したシート状体に貫通孔２６，
２８を形成した後、各放熱板用板体に絞り加工を施して
凹部１６を形成することが好ましい。放熱板用板体の各
々に絞り加工を施す際に、ピンガイド等によってシート
状体の位置決めを行うことにより、放熱板用板体の各々
の位置決めを容易に行うことができるからである。In order to form the recess 16 in which the through holes 26 and 28 are formed in the radiator plate body by drawing, first, the corners and straight portions of the recess 16 of the radiator plate body are formed. The through holes 26, 28 are punched out by punching out the portion where the inner wall portion is formed.
After forming, the plate body for heat dissipation plate is drawn to form the recess 16 having a predetermined depth. At this time, the through holes 26,
After forming 28, it is preferable to form the recess 16 by subjecting each plate for the heat dissipation plate to drawing. This is because each of the heat radiating plate bodies can be easily positioned by positioning the sheet-shaped body with a pin guide or the like when performing the drawing process on each of the heat radiating plate bodies.
【００１１】凹部１６の所定箇所に貫通孔２６，２８が
形成された図２に示す放熱板１８には、その周縁部２０
の平坦面に、放熱板１８と別体に形成したインナーリー
ド２４，２４・・の先端部を接着シート２２により接着
することによって、図１に示すリードフレーム１０を得
ることができる。得られたリードフレーム１０の放熱板
１８に形成された凹部１６の底面１４に半導体素子１２
を搭載した後、図１に示す様に、半導体素子１２とイン
ナーリード２４，２４・・の各先端部とをワイヤ３２，
３２・・によって電気的に接続する。その後、半導体素
子１２及びワイヤ３２，３２・・等を樹脂モールドする
ことによって、図５に示す半導体装置を得ることができ
る。図５に示す半導体装置では、凹部１６の底面１４に
対応する放熱板１８の表面３４が、半導体素子１２等を
封止する封止樹脂から成る封止樹脂３６の表面から露出
している。The peripheral edge portion 20 of the heat radiating plate 18 shown in FIG. 2 in which the through holes 26 and 28 are formed in the recess 16 at predetermined positions.
The lead frame 10 shown in FIG. 1 can be obtained by bonding the ends of the inner leads 24, 24, ... The semiconductor element 12 is provided on the bottom surface 14 of the recess 16 formed in the heat dissipation plate 18 of the obtained lead frame 10.
1 is mounted, the semiconductor element 12 and the inner leads 24, 24 ...
32 ... Electrically connected. Thereafter, the semiconductor element 12 and the wires 32, 32, ... Are resin-molded to obtain the semiconductor device shown in FIG. In the semiconductor device shown in FIG. 5, the surface 34 of the heat dissipation plate 18 corresponding to the bottom surface 14 of the recess 16 is exposed from the surface of the sealing resin 36 made of sealing resin for sealing the semiconductor element 12 and the like.
【００１２】この様に、放熱板１８の一部が封止樹脂３
６の表面から露出することによって、放熱板１８の放熱
性を向上できる。特に、図５に示す半導体装置では、半
導体素子１２が搭載されている凹部１６の底面１４に対
応する放熱板１８の表面３４が封止樹脂３６の表面から
露出している。このため、半導体素子１２に発生した熱
を迅速に放熱することができ、半導体素子１２の誤動作
を少なくできる。更に、封止樹脂３６の表面から露出す
る放熱板１８の外面３４に、放熱フィン等の放熱部材を
装着し、図５に示す半導体装置の放熱性を更に向上する
こともできる。また、封止樹脂３６では、放熱板１８の
凹部１６に形成された貫通孔２６，２８を介して放熱板
１８の一面側の封止樹脂と他面側の封止樹脂とが連結さ
れているため、放熱板１８と封止樹脂との剥離を防止で
きる。As described above, a part of the heat sink 18 is covered with the sealing resin 3.
By exposing from the surface of 6, the heat dissipation of the heat dissipation plate 18 can be improved. In particular, in the semiconductor device shown in FIG. 5, the surface 34 of the heat dissipation plate 18 corresponding to the bottom surface 14 of the recess 16 in which the semiconductor element 12 is mounted is exposed from the surface of the sealing resin 36. Therefore, the heat generated in the semiconductor element 12 can be quickly dissipated, and the malfunction of the semiconductor element 12 can be reduced. Further, a heat dissipation member such as a heat dissipation fin may be attached to the outer surface 34 of the heat dissipation plate 18 exposed from the surface of the sealing resin 36 to further improve the heat dissipation performance of the semiconductor device shown in FIG. Further, in the sealing resin 36, the sealing resin on one surface side of the heat dissipation plate 18 and the sealing resin on the other surface side are connected via the through holes 26 and 28 formed in the recess 16 of the heat dissipation plate 18. Therefore, peeling between the heat dissipation plate 18 and the sealing resin can be prevented.
【００１３】図５に示す半導体装置では、凹部１６の底
面１４に対応する放熱板１８の表面３４が封止樹脂３６
の表面から露出しているが、図６に示す半導体装置の様
に、凹部１６の底面１４に対応する放熱板１８の表面３
４が封止樹脂層３６内に封止されていてもよい。図６に
示す半導体装置では、図５に示す半導体装置に比較して
放熱性は低下するものの、凹部１６の底面１４に対応す
る放熱板１８の表面３４を覆う封止樹脂の厚さは、図７
（ａ）に示す半導体装置に比較して薄いため、図７
（ａ）に示す半導体装置よりも放熱性は良好である。ま
た、図１〜図６に示すリードフレーム１０又は半導体装
置では、放熱板１８をインナーリード２４，２４・・と
別体に形成した後、両者を組み立てるが、放熱板１８を
サポートバー等でフレームに支承し、インナーリード２
４，２４・・と一体に形成してもよい。In the semiconductor device shown in FIG. 5, the surface 34 of the heat dissipation plate 18 corresponding to the bottom surface 14 of the recess 16 is the sealing resin 36.
Although exposed from the surface of the heat sink 18, the surface 3 of the heat sink 18 corresponding to the bottom surface 14 of the recess 16 is exposed as in the semiconductor device shown in FIG.
4 may be sealed in the sealing resin layer 36. In the semiconductor device shown in FIG. 6, the heat dissipation is lower than that of the semiconductor device shown in FIG. 5, but the thickness of the sealing resin covering the surface 34 of the heat dissipation plate 18 corresponding to the bottom surface 14 of the recess 16 is as shown in FIG. 7
Since it is thinner than the semiconductor device shown in FIG.
The heat dissipation is better than that of the semiconductor device shown in (a). Further, in the lead frame 10 or the semiconductor device shown in FIGS. 1 to 6, after the heat dissipation plate 18 is formed separately from the inner leads 24, 24, ..., Both are assembled, but the heat dissipation plate 18 is framed by a support bar or the like. Support the inner lead 2
It may be formed integrally with 4, 24.
【００１４】[0014]
【発明の効果】本発明によれば、半導体素子が搭載され
る搭載面が底面に形成され、通常の絞り加工では形成困
難な程度に深い凹部を、絞り加工によって放熱板に容易
に形成できる。このため、この放熱板が装着されたリー
ドフレームは、良好な生産性を奏することができ、リー
ドフレームの生産コスト、更には半導体装置の生産コス
トの低減を図ることができる。また、このリードフレー
ムに搭載された半導体素子等を樹脂封止して得られた半
導体装置では、封止樹脂と放熱板との剥離を効果的に防
止できる。更に、凹部の底面に対応する放熱板の表面を
封止樹脂の表面から露出して放熱性を向上でき、半導体
装置の信頼性を向上できる。According to the present invention, a mounting surface on which a semiconductor element is mounted is formed on the bottom surface, and a deep recess which is difficult to form by ordinary drawing can be easily formed on the heat sink by drawing. Therefore, the lead frame to which the heat dissipation plate is attached can have good productivity, and the production cost of the lead frame and the production cost of the semiconductor device can be reduced. Further, in a semiconductor device obtained by resin-sealing a semiconductor element mounted on this lead frame, peeling between the sealing resin and the heat sink is effectively prevented.
Can be stopped. Furthermore, the surface of the heat sink corresponding to the bottom of the recess is
It can be exposed from the surface of the encapsulating resin to improve heat dissipation, and the reliability of the semiconductor device can be improved.
【図１】本発明に係るリードフレームの一例を示す断面
図である。FIG. 1 is a sectional view showing an example of a lead frame according to the present invention.
【図２】図１に示すリードフレームに装着された放熱板
の正面図である。FIG. 2 is a front view of a heat dissipation plate attached to the lead frame shown in FIG.
【図３】放熱板の凹部に形成する貫通孔の形状を示す部
分拡大正面図及び部分拡大断面図である。FIG. 3 is a partially enlarged front view and a partially enlarged cross-sectional view showing the shape of a through hole formed in a recess of a heat dissipation plate.
【図４】放熱板の凹部に形成する貫通孔の他の形状を示
す部分拡大正面図及び部分拡大断面図である。FIG. 4 is a partially enlarged front view and a partially enlarged cross-sectional view showing another shape of a through hole formed in the recess of the heat dissipation plate.
【図５】本発明に係る半導体装置の一例を示す断面図で
ある。FIG. 5 is a sectional view showing an example of a semiconductor device according to the present invention.
【図６】本発明に係る半導体装置の他の例を示す断面図
である。FIG. 6 is a cross-sectional view showing another example of a semiconductor device according to the present invention.
【図７】従来の半導体装置を示す断面図である。FIG. 7 is a cross-sectional view showing a conventional semiconductor device.
【図８】従来の半導体装置を改良した半導体装置の断面
図である。FIG. 8 is a cross-sectional view of a semiconductor device improved from the conventional semiconductor device.
【図９】図８に示す半導体装置に用いた放熱板の正面図
である。9 is a front view of a heat dissipation plate used in the semiconductor device shown in FIG.
１０ リードフレーム １２ 半導体素子 １４ 底面 １６ 凹部 １８ 放熱板 ２０ 周縁部 ２２ 接着テープ ２４ インナーリード ２６，２８ 貫通孔 ２８ａ スリット ３０ 張出部 ３２ ワイヤ ３４ 表面 ３６ 封止樹脂 10 lead frame 12 Semiconductor element 14 Bottom 16 recess 18 Heat sink 20 Perimeter 22 Adhesive tape 24 Inner lead 26, 28 through holes 28a slit 30 Overhanging part 32 wires 34 surface 36 sealing resin
Claims (5)
と、前記放熱板に搭載された半導体素子とワイヤ等によ
って電気的に接続されるインナーリードとを具備するリ
ードフレームにおいて、 該放熱板の半導体素子が搭載される搭載面が、絞り加工
によって形成された矩形状の凹部の底面に形成され、 且つ前記凹部の各角部の内壁部を形成する曲折部分が、
抜き落とされて貫通孔に形成されていると共に、 前記凹部の直線部の内壁部を形成する曲折部分が部分的
に抜き落とされて形成された貫通孔又はスリット内に、
前記凹部の底部の一部が張り出した張出部が形成されて
いる ことを特徴とするリードフレーム。1. A lead frame comprising: a heat dissipation plate on which a rectangular semiconductor element is mounted; and an inner lead electrically connected to the semiconductor element mounted on the heat dissipation plate by a wire or the like. The mounting surface on which the semiconductor element is mounted is formed on the bottom surface of a rectangular recess formed by drawing, and the bent portion forming the inner wall of each corner of the recess is
Together are formed in the vent dropped through holes, bent portions partially forming the inner wall portion of the straight portion of the recess
In the through hole or slit formed by being pulled out to
A protrusion is formed by protruding a part of the bottom of the recess.
Lead frame, characterized in that there.
が、インナーリードと別体に形成された放熱板であっ
て、 前記放熱板とインナーリードの先端部とが接着テープ等
の接着部材によって接着されて一体化されている請求項
１記載のリードフレーム。2. The heat dissipation plate on which the rectangular semiconductor element is mounted is a heat dissipation plate formed separately from the inner lead, and the end part of the heat dissipation plate and the inner lead is an adhesive member such as an adhesive tape. Claims that are bonded and integrated by
The lead frame described in 1 .
と、前記放熱板に搭載された半導体素子とワイヤ等によ
って電気的に接続されたインナーリードとが、封止樹脂
によって封止された半導体装置において、 該半導体素子が、前記放熱板に絞り加工によって形成さ
れた矩形状の凹部の底面に搭載され、 且つ前記凹部の各角部の内壁部を形成する曲折部分が、
抜き落とされて貫通孔に形成されていると共に、 前記凹部の直線部の内壁部を形成する曲折部分が部分的
に抜き落とされて形成された貫通孔又はスリット内に、
前記凹部の底部の一部が張り出した張出部が形成されて
いる ことを特徴とする半導体装置。3. A heat sink on which a rectangular semiconductor element is mounted and an inner lead electrically connected to the semiconductor element on the heat sink by a wire or the like are sealed with a sealing resin. In the semiconductor device, the semiconductor element is mounted on the bottom surface of a rectangular recess formed in the heat dissipation plate by drawing, and the bent portion forming the inner wall of each corner of the recess is
Together are formed in the vent dropped through holes, bent portions partially forming the inner wall portion of the straight portion of the recess
In the through hole or slit formed by being pulled out to
A protrusion is formed by protruding a part of the bottom of the recess.
Wherein a it is.
封止樹脂の表面から露出している請求項３記載の半導体
装置。4. The surface of the heat sink corresponding to the bottom of the recess is
The semiconductor device according to claim 3, which is exposed from the surface of the sealing resin.
が、インナーリードと別体に形成された放熱板であっ
て、 前記放熱板とインナーリードの先端部とが接着テープ等
の接着部材によって接着されて一体化されている請求項
３又は請求項４記載の半導体装置。5. The heat dissipation plate on which the rectangular semiconductor element is mounted is a heat dissipation plate formed separately from the inner lead, and the end part of the heat dissipation plate and the inner lead is an adhesive member such as an adhesive tape. Claims that are bonded and integrated by
The semiconductor device according to claim 3 or claim 4 .
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000180858A JP3533363B2 (en) | 2000-06-16 | 2000-06-16 | Lead frame and semiconductor device |
| KR1020010021713A KR100732021B1 (en) | 2000-06-16 | 2001-04-23 | Lead frame and semiconductor device |
| TW090114612A TW508781B (en) | 2000-06-16 | 2001-06-15 | Lead frame and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000180858A JP3533363B2 (en) | 2000-06-16 | 2000-06-16 | Lead frame and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001358275A JP2001358275A (en) | 2001-12-26 |
| JP3533363B2 true JP3533363B2 (en) | 2004-05-31 |
Family
ID=18681865
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000180858A Expired - Fee Related JP3533363B2 (en) | 2000-06-16 | 2000-06-16 | Lead frame and semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3533363B2 (en) |
| KR (1) | KR100732021B1 (en) |
| TW (1) | TW508781B (en) |
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|---|---|---|---|---|
| JP4601656B2 (en) * | 2007-10-18 | 2010-12-22 | パナソニック株式会社 | Resin-sealed semiconductor device and manufacturing method thereof |
| US10881014B2 (en) | 2015-09-29 | 2020-12-29 | Hitachi Automotive Systems, Ltd. | Electronic control device, and manufacturing method for vehicle-mounted electronic control device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0134933B1 (en) * | 1994-10-10 | 1998-04-20 | 황인길 | Semiconductor package |
| KR0183649B1 (en) * | 1996-05-15 | 1999-03-20 | 이대원 | Leadframe assembly and semiconductor device using it |
| KR20000002053A (en) * | 1998-06-16 | 2000-01-15 | 윤종용 | High heat resistant semiconductor package |
-
2000
- 2000-06-16 JP JP2000180858A patent/JP3533363B2/en not_active Expired - Fee Related
-
2001
- 2001-04-23 KR KR1020010021713A patent/KR100732021B1/en active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2001358275A (en) | 2001-12-26 |
| KR100732021B1 (en) | 2007-06-27 |
| TW508781B (en) | 2002-11-01 |
| KR20010113462A (en) | 2001-12-28 |
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