JP3528357B2 - TAB mounting bonding tool - Google Patents
TAB mounting bonding toolInfo
- Publication number
- JP3528357B2 JP3528357B2 JP24677795A JP24677795A JP3528357B2 JP 3528357 B2 JP3528357 B2 JP 3528357B2 JP 24677795 A JP24677795 A JP 24677795A JP 24677795 A JP24677795 A JP 24677795A JP 3528357 B2 JP3528357 B2 JP 3528357B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding tool
- lead wire
- bonding
- tool
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、ＩＣやＬＳＩ等の
半導体素子を基板等に実装する際に、圧着工具として使
用されるボンディングツールに関する。
【０００２】
【従来の技術】半導体素子を実用できる形に実装して、
その電気的特性を引き出すためには、半導体素子に形成
された電極とパッケージのリードとを電気的に接続し、
及びこのリードとプリント配線基板等の外部端子とを電
気的に接続する必要がある。
【０００３】半導体素子の電極とパッケージのリードと
の接続は、従来から金あるいは銅等からなる金属細線を
導線（ボンディングワイヤー）とし、キャピラリーと呼
ばれる工具を用いて１本づつ接続するワイヤボンディン
グ法によって行われてきた。又、最近では、パターン形
成された銅箔に錫もしくは金めっきしたフィルムキャリ
アテープと呼ばれるリードを用い、このフィルム上にパ
ターン化されたリードと半導体素子の電極とを、所定温
度に加熱されたボンディングツールを用いて一括して接
続するＴＡＢ方式（Tape Automated Bonding）等のワイ
ヤレスボンディングも広く普及している。
【０００４】このＴＡＢ方式等のワイヤレスボンディン
グ等に用いられるボンディングツールは、Ｍｏ、Ｆｅ−
Ｎｉ合金、Ｎｉ合金、Ｔｉ又はＴｉ合金、Ｗ又はＷ−Ｎ
ｉ合金、Ｗ−Ｃｕ合金、Ｆｅ−Ｎｉ−Ｃｏ合金、超硬合
金等で直接通電したり、又はヒーターを挿入することに
より、所定の温度に加熱して使用されていた。
【０００５】しかし、これら金属単体からなるボンディ
ングツールは先端押圧面の平坦度が低い、温度分布が均
一でない、耐摩耗性に劣り工具寿命が短い等の欠点があ
った。そこでこれら金属単体からなるボンディングツー
ルの先端部に、多結晶ダイヤモンド、ダイヤモンド単結
晶、立方晶窒化ホウ素焼結体（ｃＢＮ）等の硬質物質を
設けて先端押圧面を構成したボンディングツールが多く
用いられている。
【０００６】尚、多結晶ダイヤモンドは低圧気相合成法
によりＳｉ3Ｎ4、ＳｉＣ又はＡｌＮ等を主成分とする焼
結体やＳｉ等の基板上に形成したものを工具母材に接合
し、他の硬質物質は工具母材にそのまま接合した上で、
ボンディングツールに取りつけられることが多い。
【０００７】
【発明が解決しようとする課題】ところが近年になり、
半導体チップが多機能高集積化のために一つのチップか
ら引き出すリード数が増加する傾向にあり、かつコスト
面・実装面積の点で半導体チップの大きさを大きく出来
ないため、必然的にリード線が細く・薄くなる傾向にあ
り、今後は幅１０μｍ以下、厚さ５μｍ以下のリード線
もでてきている状況にある。かかる半導体チップの高集
積度化・リード線の極細化に伴って、従来のボンディン
グツールにおいてはリード線と直接接触する押圧面を形
成する４辺の稜線により、リード線が傷つく或いは断線
する問題が生じ信頼性の高い実装が困難になっている。
【０００８】本発明はかかる従来の事情に鑑み、半導体
素子の高集積度化に伴い、リード線の極細化・極薄化に
対しても、実装に際してリード線が断線し難いボンディ
ングツールを提供することを課題とする。
【０００９】
【課題を解決するための手段】上記課題を解決するた
め、本発明の半導体素子接合用のＴＡＢ実装用ボンディ
ングツールにおいては、先端押圧面を形成する４辺の稜
線の全部もしくは一部に半径１μｍ以上１００μｍ以下
の丸みを設けたことを特徴とする。
【００１０】
【作用】本発明者らは、リード線幅が４０μｍよりも細
いＩＣのＴＡＢ実装において、実装後の信頼性のデータ
を詳細に検討した結果、リード線のボンディングツール
の稜線部が接触する箇所において実装に際して極微細な
傷が発生し、この傷が元で使用中にリード線が断線する
ことを突き止めた。
【００１１】即ち、実装に際して図５に示すごとく基板
等に設けてあるリード線５とＩＣやＬＳＩ等の半導体素
子６とをボンディングツールにより加熱状態で圧着する
が、このときボンディングツールの先端押圧面３の稜線
部４と銅箔上に金或いは錫をメッキしたリード線５が接
触し、リード線５はボンディングツールにより１リード
あたり５ｇ以上２００ｇ未満の荷重で電極側に押しつけ
られる。この場合にボンディングツールの先端押圧面３
の稜線部４が鋭利な状態であると、リード線５に傷が付
いたり断線したりするわけである。この傾向は、特にリ
ード線５が細い、あるいは薄い場合に顕著に発生する。
【００１２】そこで本発明では、図３に示すようにボン
ディングツールの先端押圧面３の稜線部４に半径１μｍ
以上１００μｍ以下の丸みを設けることによって、リー
ド線５がボンディングツールにより抑えつけられた際の
リード線５の傷付き及び断線を無くすことができるので
ある。
【００１３】丸みの大きさは１μｍ未満ではリードの傷
付け及び断線防止の効果が少なく、又１００μｍを越え
ると稜線部４に丸みが付きすぎて図４に示すように、十
分にリードを押すことが出来なくなる。尚、稜線部は必
ずしも一定の半径を持っている必要は無く、複数の半径
の混在した丸みであっても良い、必要なのはリード線を
傷つけるような鋭利な稜線でなければ良いことになる。
【００１４】
【発明の実施の形態】図１は、この発明のボンディング
ツールの一態様を示すもので、１は工具の先端ブランク
部、２は金属シャンク部である。この先端ブランク部１
は金属シャンク部２へ蝋付け、ネジ止め、あるいはその
他の機械的固定手段等適宜の方法で接合されている。
【００１５】先端ブランク部１における先端押圧面３の
材質は、ダイヤモンド又は立方晶窒化ホウ素を主成分と
する硬質物質からなり、この先端押圧面３を形成する４
辺の稜線部４には半径１μｍ以上１００μｍ以下の丸み
を持たせてある。
【００１６】使用に際しては、金属シャンク部２の装着
部分７でボンディング装置（図示せず）に取り付けら
れ、金属シャンク部２にあるカートリッジヒーター収納
部８及び熱電対収納部９にそれぞれ熱電対及びカートリ
ッジヒーターが取り付けられ、この状態で工具を加熱
し、工具先端部１を熱した状態で、図２に示すように、
ＩＣやＬＳＩ等の半導体素子６を基板等のリード線５に
圧着して実装を行なう。
【００１７】この際、図３に示すように、先端押圧面３
の４辺の稜線部４とリード線５が接触する部分は、半径
１μｍ以上１００μｍ以下の丸みが設けてあり鋭利な稜
線がないので、この部分でリード線５を傷つけるおそれ
がなく、実装後のリード線５の断線を生じることが殆ど
なくなる。
【００１８】
【実施例】幅が３０μｍ、厚さが１５μｍのリード線を
５１４本有したフィルムキャリアテープを、長さ１７．
５ｍｍ、幅が３．８ｍｍのＩＣチップに実装する作業
を、先端押圧面を形成する４辺の稜線部に半径１５μｍ
の丸みを有した本発明のボンディングツールを用いて１
０００個のＩＣチップについて行った。又、比較のため
従来の稜線部に曲率を有していないボンディングツール
を用いて１０００個のＩＣチップについて行った。
【００１９】評価として外観検査及び−３０℃から１３
０℃の繰り返し熱サイクル試験を３０００回行い断線の
検査を行った。表１はその結果を示すが、本発明のボン
ディングツールにより良好な接合品質の得られることが
判る。
【００２０】
【表１】
【００２１】
【発明の効果】本発明によれば、実装時にボンディング
ツールの先端押圧面の稜線部に鋭利な稜線がないため、
リード線にボンディングツールが接触した際に、リード
線を傷つけることを避けることが出来る。特に、リード
線幅が４０μｍよりも細く、かつリード線厚さが２５μ
ｍよりも薄い場合に本発明のボンディングツールが特に
効果的である。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding tool used as a crimping tool when mounting a semiconductor element such as an IC or LSI on a substrate or the like. 2. Description of the Related Art A semiconductor device is mounted in a practical form,
In order to bring out the electrical characteristics, the electrodes formed on the semiconductor element are electrically connected to the leads of the package,
In addition, it is necessary to electrically connect the leads to external terminals such as a printed wiring board. Conventionally, the connection between the electrode of the semiconductor element and the lead of the package is made by a wire bonding method in which a thin metal wire made of gold or copper is used as a conducting wire (bonding wire) and connected one by one using a tool called a capillary. Has been done. Also, recently, a lead called a film carrier tape in which tin or gold is plated on a patterned copper foil is used, and the leads patterned on the film and the electrodes of the semiconductor element are bonded to each other by heating to a predetermined temperature. Wireless bonding, such as TAB (Tape Automated Bonding), in which connections are made collectively using a tool, is also widespread. [0004] Bonding tools used for wireless bonding of the TAB method or the like are Mo, Fe-
Ni alloy, Ni alloy, Ti or Ti alloy, W or W-N
An i-alloy, a W-Cu alloy, an Fe-Ni-Co alloy, a cemented carbide or the like has been used by directly energizing or inserting a heater to heat it to a predetermined temperature. [0005] However, these bonding tools made of a single metal have disadvantages such as low flatness of the front end pressing surface, uneven temperature distribution, poor wear resistance and short tool life. Therefore, a bonding tool having a pressing surface formed by providing a hard material such as polycrystalline diamond, diamond single crystal, or cubic boron nitride sintered body (cBN) at the tip of these metal bonding tools is often used. ing. Incidentally, polycrystalline diamond formed on a sintered body or a substrate made of Si or the like containing Si 3 N 4 , SiC or AlN as a main component by a low-pressure vapor phase synthesis method is joined to a tool base material. Other hard materials are joined directly to the tool base material,
Often attached to a bonding tool. [0007] In recent years, however,
Since the number of leads drawn from one chip tends to increase due to multifunctional and highly integrated semiconductor chips, and the size of the semiconductor chip cannot be increased in terms of cost and mounting area, lead wires are inevitable. Are becoming thinner and thinner, and in the future, lead wires having a width of 10 μm or less and a thickness of 5 μm or less are being produced. With the increase in the degree of integration of semiconductor chips and the miniaturization of lead wires, the conventional bonding tool has a problem that the lead wires are damaged or disconnected due to the four ridges forming the pressing surface that directly contacts the lead wires. As a result, reliable mounting is difficult. In view of the above circumstances, the present invention provides a bonding tool in which a lead wire is hard to be broken at the time of mounting, even if the lead wire is made extremely thin and extremely thin with the increase in the degree of integration of a semiconductor element. That is the task. In order to solve the above problems, a bonding tool for mounting a TAB for bonding a semiconductor element according to the present invention provides a ridge line of four sides forming a front end pressing surface. Characterized in that a radius of 1 μm or more and 100 μm or less is provided on all or a part of them. The present inventors have studied in detail the reliability data after mounting in TAB mounting of an IC having a lead wire width smaller than 40 μm, and as a result, the ridge of the bonding tool of the lead wire has come into contact. A very small flaw was generated during mounting at a location where the lead wire was broken during use. That is, as shown in FIG. 5, a lead wire 5 provided on a substrate or the like and a semiconductor element 6 such as an IC or LSI are pressure-bonded in a heated state by a bonding tool as shown in FIG. The ridge portion 4 of 3 comes in contact with a lead wire 5 plated with gold or tin on a copper foil, and the lead wire 5 is pressed against the electrode side by a bonding tool with a load of 5 g or more and less than 200 g per lead. In this case, the tip pressing surface 3 of the bonding tool
If the ridge portion 4 is sharp, the lead wire 5 may be damaged or broken. This tendency particularly occurs when the lead wire 5 is thin or thin. Therefore, in the present invention, as shown in FIG. 3, the ridge 4 of the tip pressing surface 3 of the bonding tool has a radius of 1 μm.
By providing the roundness of 100 μm or less, it is possible to eliminate the damage and disconnection of the lead wire 5 when the lead wire 5 is held down by the bonding tool. If the size of the roundness is less than 1 μm, the effect of preventing damage and breakage of the lead is small, and if it exceeds 100 μm, the ridge 4 is too rounded and the lead can be sufficiently pressed as shown in FIG. I cannot do it. Note that the ridge portion does not necessarily have to have a constant radius, and may have a rounded shape having a plurality of radii. It is only necessary that the ridge portion be a sharp ridge line that does not damage the lead wire. FIG. 1 shows an embodiment of a bonding tool according to the present invention, wherein 1 is a blank portion at the tip of the tool, and 2 is a metal shank portion. This tip blank part 1
Is joined to the metal shank portion 2 by an appropriate method such as brazing, screwing, or other mechanical fixing means. The material of the front end pressing surface 3 of the front end blank portion 1 is made of a hard material mainly composed of diamond or cubic boron nitride.
The side ridge 4 has a radius of 1 μm or more and 100 μm or less. At the time of use, a thermocouple and a cartridge are attached to a bonding device (not shown) at a mounting portion 7 of the metal shank portion 2 and stored in a cartridge heater storage portion 8 and a thermocouple storage portion 9 in the metal shank portion 2, respectively. A heater is attached, the tool is heated in this state, and the tool tip 1 is heated, as shown in FIG.
A semiconductor element 6 such as an IC or an LSI is mounted on a lead wire 5 such as a substrate by pressure bonding. At this time, as shown in FIG.
The portion where the ridge 4 of the four sides contacts the lead wire 5 is provided with a radius of 1 μm or more and 100 μm or less, and there is no sharp ridge. Disruption of the lead wire 5 hardly occurs. EXAMPLE A film carrier tape having 514 leads having a width of 30 .mu.m and a thickness of 15 .mu.m has a length of 17.times.
The work of mounting on an IC chip having a width of 5 mm and a width of 3.8 mm is performed by applying a radius of 15 μm to the ridges of the four sides forming the tip pressing surface.
1 using the bonding tool of the present invention having a roundness
Performed on 000 IC chips. For comparison, a conventional bonding tool having no curvature at the ridge was used for 1,000 IC chips. As an evaluation, a visual inspection and a temperature of -30.degree.
A repeated thermal cycle test at 0 ° C. was performed 3000 times to check for disconnection. Table 1 shows the results, and it can be seen that good bonding quality can be obtained by the bonding tool of the present invention. [Table 1] According to the present invention, since there is no sharp ridge at the ridge of the pressing surface at the tip of the bonding tool at the time of mounting,
When the bonding tool comes into contact with the lead wire, the lead wire can be prevented from being damaged. In particular, the lead wire width is smaller than 40 μm and the lead wire thickness is 25 μm.
When the thickness is smaller than m, the bonding tool of the present invention is particularly effective.
【図面の簡単な説明】
【図１】本発明のボンディングツールを示す図である。
【図２】本発明のボンディングツールの実装状態を示す
図である。
【図３】実装時のリード線とボンディングツールの状態
を示す拡大図である。
【図４】稜線部の丸みが大き過ぎる場合の不具合を示す
拡大図である。
【図５】従来のボンディングツールの不具合を示す拡大
図である。
【符号の説明】
１ 先端ブランク部
２ 金属シャンク部
３ 先端押圧面
４ 稜線部
５ リード線
６ ＩＣチップ等の半導体素子
７ 装着部分
８ カートリッジヒーター収納部
９ 熱電対収納部BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing a bonding tool of the present invention. FIG. 2 is a diagram showing a mounting state of a bonding tool of the present invention. FIG. 3 is an enlarged view showing a state of a lead wire and a bonding tool during mounting. FIG. 4 is an enlarged view showing a problem when the ridge line portion is too round. FIG. 5 is an enlarged view showing a defect of a conventional bonding tool. [Description of Signs] 1 Tip blank section 2 Metal shank section 3 Tip pressing surface 4 Ridge section 5 Lead wire 6 Semiconductor element 7 such as IC chip 7 Mounting section 8 Cartridge heater storage section 9 Thermocouple storage section
フロントページの続き (56)参考文献 特開 平３−191538（ＪＰ，Ａ) 特開 平１−273325（ＪＰ，Ａ) 特開 平３−83356（ＪＰ，Ａ) 特開 平８−222610（ＪＰ，Ａ) 実開 平５−87947（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/603 H01L 21/60 H01L 21/607 H01L 21/92 Continuation of the front page (56) References JP-A-3-191538 (JP, A) JP-A-1-273325 (JP, A) JP-A-3-83356 (JP, A) JP-A-8-222610 (JP) , A) Japanese Utility Model Application Hei 5-87947 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/603 H01L 21/60 H01L 21/607 H01L 21/92
Claims (1)
化ホウ素を主成分とする硬質物質からなる半導体素子の
ＴＡＢ実装用ボンディングツールにおいて、先端押圧面
を形成する４辺全部もしくは一部の稜線に半径１μｍ以
上１００μｍ以下の丸みを持たせたことを特徴とするＴ
ＡＢ実装用ボンディングツール。(57) [Claims 1] A semiconductor element whose tip pressing surface is made of a hard substance mainly composed of diamond or cubic boron nitride .
In the bonding tool for mounting a TAB, T is characterized in that all or some of the ridges forming the front end pressing surface have a radius of 1 μm or more and 100 μm or less.
AB mounting bonding tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24677795A JP3528357B2 (en) | 1995-08-30 | 1995-08-30 | TAB mounting bonding tool |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24677795A JP3528357B2 (en) | 1995-08-30 | 1995-08-30 | TAB mounting bonding tool |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0969544A JPH0969544A (en) | 1997-03-11 |
| JP3528357B2 true JP3528357B2 (en) | 2004-05-17 |
Family
ID=17153511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24677795A Expired - Lifetime JP3528357B2 (en) | 1995-08-30 | 1995-08-30 | TAB mounting bonding tool |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3528357B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012124247A (en) * | 2010-12-07 | 2012-06-28 | Mitsubishi Electric Corp | Joint element, method of manufacturing semiconductor device and semiconductor device |
| JP2013174833A (en) * | 2012-02-27 | 2013-09-05 | Sumitomo Bakelite Co Ltd | Molding tool and method for manufacturing optical waveguide |
-
1995
- 1995-08-30 JP JP24677795A patent/JP3528357B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0969544A (en) | 1997-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5090119A (en) | Method of forming an electrical contact bump | |
| US5217154A (en) | Semiconductor bonding tool | |
| US5495667A (en) | Method for forming contact pins for semiconductor dice and interconnects | |
| US5425491A (en) | Bonding tool, production and handling thereof | |
| JP3439417B2 (en) | Connection conductor for semiconductor package, semiconductor package, and method for assembling semiconductor package | |
| JP2000286038A (en) | Structure and method for bonding ceramic heater and electrode terminal | |
| EP0032437A1 (en) | Thermocompression bonding tool | |
| JP3528357B2 (en) | TAB mounting bonding tool | |
| JP3111312B2 (en) | Semiconductor device | |
| EP2167269B1 (en) | Wire bonding capillary tool having multiple outer steps | |
| JPH04338648A (en) | Semiconductor device, forming method for bump electrode of semiconductor device, mounting method for semiconductor device, chip carrier tape, display device, and electronic printer | |
| JP2007294530A (en) | Lead-frame assembly | |
| US5373731A (en) | Bonding tool, production and handling thereof | |
| JPH118270A (en) | Method for mounting semiconductor chip, method for manufacturing chip-on-chip structure, and method for manufacturing chip-on-board structure | |
| JP3163765B2 (en) | Bonding tool and its manufacturing and handling method | |
| JP3694607B2 (en) | Contact heating heater and contact heating apparatus using the same | |
| JP3050172B2 (en) | Inspection method and inspection substrate for flip-chip IC | |
| JP3121734B2 (en) | Semiconductor device and metal ball for semiconductor device bump | |
| JP3264059B2 (en) | Bonding tool | |
| TW543130B (en) | Bonding tool, bonding stage, front part of bonding tool, and stage of bonding stage | |
| CN101752335B (en) | Semiconductor device and method for producing semiconductor device | |
| JP2002092578A (en) | Ic module and manufacturing method thereof | |
| JPH06120290A (en) | Semiconductor device | |
| JP3381746B2 (en) | Bonding tool | |
| Hilleringmann | Packaging of Integrated Circuits |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040108 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040203 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040216 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090305 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090305 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100305 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100305 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110305 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110305 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120305 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120305 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130305 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140305 Year of fee payment: 10 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |