JP3507220B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP3507220B2 JP3507220B2 JP26244595A JP26244595A JP3507220B2 JP 3507220 B2 JP3507220 B2 JP 3507220B2 JP 26244595 A JP26244595 A JP 26244595A JP 26244595 A JP26244595 A JP 26244595A JP 3507220 B2 JP3507220 B2 JP 3507220B2
- Authority
- JP
- Japan
- Prior art keywords
- air supply
- transfer chamber
- supply flange
- reaction
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は基板表面に薄膜の生
成、或はエッチング等の処理をして半導体デバイスを製
造する半導体製造装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor device by forming a thin film on the surface of a substrate or performing a process such as etching.
【０００２】[0002]
【従来の技術】半導体製造装置では所要の雰囲気で或は
真空雰囲気下で加熱して基板表面に薄膜の生成、或はエ
ッチング等の所要の処理を行う。2. Description of the Related Art In a semiconductor manufacturing apparatus, heating is performed in a required atmosphere or in a vacuum atmosphere to form a thin film on a substrate surface, or to perform a required treatment such as etching.
【０００３】図２は従来の半導体製造装置、特に枚葉式
半導体製造装置を示しており、図３は該半導体製造装置
の反応ガス導入部を示している。FIG. 2 shows a conventional semiconductor manufacturing apparatus, especially a single wafer type semiconductor manufacturing apparatus, and FIG. 3 shows a reaction gas introducing section of the semiconductor manufacturing apparatus.
【０００４】図中１は偏平な空間を画成する石英製の筒
状反応管、該反応管１の周囲にはヒータ２、該ヒータ２
の更に周囲には絶縁材３が設けられている。前記反応管
１の上流側端には給気フランジ４、下流側端には排気フ
ランジ５が設けられている。前記給気フランジ４には搬
送室６が気密に設けられ、前記搬送室６と反応管１を連
絡する開口部１４はゲートバルブ７により閉塞され、開
口部１４とゲートバルブ７間にはＯリング１２が設けら
れ、閉塞状態での気密性が維持されている。前記ゲート
バルブ７の開閉機構部は前記搬送室６の外部に設けら
れ、該開閉機構部の搬送室６貫通部はベローズ１３によ
り気密にシールされている。又、前記排気フランジ５の
開口部１４は閉塞板８により気密に密閉されている。In FIG. 1, reference numeral 1 denotes a quartz cylindrical reaction tube defining a flat space, a heater 2 around the reaction tube 1, and a heater 2
Further, an insulating material 3 is provided on the periphery. An air supply flange 4 is provided at the upstream end of the reaction tube 1, and an exhaust flange 5 is provided at the downstream end. A transfer chamber 6 is hermetically provided on the air supply flange 4, an opening 14 that connects the transfer chamber 6 and the reaction tube 1 is closed by a gate valve 7, and an O-ring is provided between the opening 14 and the gate valve 7. 12 is provided to maintain the airtightness in the closed state. The opening / closing mechanism part of the gate valve 7 is provided outside the transfer chamber 6, and the penetrating part of the opening / closing mechanism part in the transfer chamber 6 is hermetically sealed by a bellows 13. The opening 14 of the exhaust flange 5 is hermetically sealed by the closing plate 8.
【０００５】前記給気フランジ４には給気ポート１０が
設けられ、前記排気フランジ５には排気ポート１１が設
けられ、前記給気ポート１０よりウェーハ９の処理に必
要な反応ガスが供給され、前記排気ポート１１からは反
応後のガスが排気される様になっている。An air supply port 10 is provided in the air supply flange 4, an exhaust port 11 is provided in the exhaust flange 5, and a reaction gas necessary for processing the wafer 9 is supplied from the air supply port 10. The gas after the reaction is exhausted from the exhaust port 11.
【０００６】前記搬送室６内部には被処理物であるウェ
ーハ９を前記反応管１内に搬入搬出する為の搬送機（図
示せず）が設けられており、前記ゲートバルブ７が開放
された状態でウェーハの搬送を行う。Inside the transfer chamber 6, there is provided a transfer device (not shown) for loading and unloading the wafer 9 to be processed into and out of the reaction tube 1, and the gate valve 7 is opened. The wafer is transferred in this state.
【０００７】前記ウェーハ９の処理は前記ヒータ２で反
応管１内、前記ウェーハ９を所要温度に加熱した状態
で、前記ゲートバルブ７で反応管１を密閉し、前記給気
フランジ４の給気ポート１０より反応ガスが導入され、
該反応ガスは前記反応管１を対角線状に流れて更に排気
ポート１１から排気される。The wafer 9 is processed by sealing the reaction tube 1 with the gate valve 7 while heating the wafer 9 inside the reaction tube 1 with the heater 2 to a required temperature, and then supplying the air from the air supply flange 4. Reaction gas is introduced from port 10,
The reaction gas diagonally flows through the reaction tube 1 and is further exhausted from the exhaust port 11.
【０００８】[0008]
【発明が解決しようとする課題】上記した様に前記給気
フランジ４に設けた給気ポート１０より反応ガスを供給
し、成膜処理を行っているが、成膜する膜種によっては
前記給気フランジ４の給気ポート１０内面、或は前記開
口部１４の内面低温部に反応副生成物１５が付着し、パ
ーティクルの発生源となる。反応副生成物が剥離しパー
ティクルとなってウェーハ９に付着して汚染すると、成
膜に悪影響を及ぼし製品品質の低下、或は歩留まりの低
下を招いていた。As described above, the reaction gas is supplied from the air supply port 10 provided in the air supply flange 4 to perform the film forming process. The reaction by-product 15 adheres to the inner surface of the air supply port 10 of the air flange 4 or the low temperature portion of the inner surface of the opening 14 and becomes a particle generation source. If the reaction by-product peels off and becomes particles and adheres to the wafer 9 to contaminate it, the film formation is adversely affected, resulting in deterioration of product quality or reduction of yield.
【０００９】本発明は斯かる実情に鑑み、低温部への反
応副生成物の付着を防止し、パーティクルの発生を抑止
し、良好な成膜条件を実現するものである。In view of the above situation, the present invention prevents adhesion of reaction by-products to the low temperature part, suppresses generation of particles, and realizes favorable film forming conditions.
【００１０】[0010]
【課題を解決するための手段】本発明は、反応管に給気
フランジを介して搬送室が連設され、前記給気フランジ
から反応ガスが供給される半導体製造装置に於いて、前
記給気フランジに加熱手段を設けた半導体製造装置、又
更に給気フランジと搬送室間に断熱材を設けた半導体製
造装置、又更に給気フランジに弁座を搬送室側に突出す
る様形成し、該弁座にゲートバルブを密着離反する様に
した半導体製造装置に係り、給気フランジを加熱するの
で給気フランジに反応副生成物が付着するのが防止さ
れ、又給気フランジと搬送室間が断熱構造となっている
ので、給気フランジの加熱が効率よく行え、更に給気フ
ランジに弁座を形成することで搬送室が反応管に露出し
ない構造となるので搬送室側の材料の選択の自由が増す
等構造の簡素化が図れる。According to the present invention, there is provided a semiconductor manufacturing apparatus in which a transfer chamber is connected to a reaction tube via an air supply flange, and a reaction gas is supplied from the air supply flange. A semiconductor manufacturing apparatus provided with heating means on the flange, a semiconductor manufacturing apparatus further provided with a heat insulating material between the air supply flange and the transfer chamber, or a valve seat formed on the air supply flange so as to project toward the transfer chamber, According to a semiconductor manufacturing apparatus in which a gate valve is closely attached to and separated from a valve seat, the air supply flange is heated to prevent reaction by-products from adhering to the air supply flange, and between the air supply flange and the transfer chamber. The heat insulation structure allows the air supply flange to be heated efficiently, and the valve seat is formed on the air supply flange to prevent the transfer chamber from being exposed to the reaction tube. The structure is simplified to increase freedom. That.
【００１１】[0011]
【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態を説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【００１２】図１は本発明の実施の形態の要部を示すも
のであり、図１中、図３中に於いて示したものと同一の
ものには同符号を付してある。FIG. 1 shows an essential part of an embodiment of the present invention. In FIG. 1, the same parts as those shown in FIG. 3 are designated by the same reference numerals.
【００１３】反応管１と搬送室６とは給気フランジ１７
を介して気密に連設される。該給気フランジ１７には搬
送室６側に突出する弁座１８が形成され、該弁座１８は
前記搬送室６に穿設された連結口１９に遊嵌しており、
遊嵌した状態では弁座１８と連結口１９とは非接触の状
態となっている。前記給気フランジ１７には反応管１と
搬送室６を連通する開口部１４が穿設され、該開口部１
４の周囲には熱媒体流路２１が形成され、該熱媒体流路
２１は図示しない熱交換器、流体循環装置、流体温度調
節器に接続されている。前記給気フランジ１７の一部が
弁座１８となっているので、前記搬送室６は反応管１内
部に対して露出しているところがなくなる。The reaction tube 1 and the transfer chamber 6 are provided with an air supply flange 17
Are connected in an airtight manner via. A valve seat 18 protruding toward the transfer chamber 6 is formed on the air supply flange 17, and the valve seat 18 is loosely fitted in a connection port 19 bored in the transfer chamber 6.
In the loosely fitted state, the valve seat 18 and the connection port 19 are not in contact with each other. The air supply flange 17 is provided with an opening 14 for communicating the reaction tube 1 and the transfer chamber 6 with each other.
4, a heat medium flow passage 21 is formed, and the heat medium flow passage 21 is connected to a heat exchanger, a fluid circulation device, and a fluid temperature controller (not shown). Since part of the air supply flange 17 serves as the valve seat 18, the transfer chamber 6 is not exposed to the inside of the reaction tube 1.
【００１４】前記搬送室６の反応管１側外壁面と前記給
気フランジ１７間には断熱材２０が挾設され、又該断熱
材２０の内側にはＯリング１６が挾設され、給気フラン
ジ１７と搬送室６間の気密が保持されると共に搬送室６
と給気フランジ１７間は金属接触がない構成となる。A heat insulating material 20 is provided between the outer wall surface of the transfer chamber 6 on the reaction tube 1 side and the air supply flange 17, and an O-ring 16 is provided inside the heat insulating material 20 to supply air. Airtightness between the flange 17 and the transfer chamber 6 is maintained and the transfer chamber 6
There is no metal contact between the air supply flange 17 and the air supply flange 17.
【００１５】前記搬送室６と反応管１を連絡する開口部
１４は前記ゲートバルブ７により閉塞され、該給気フラ
ンジ１７は前記弁座１８に直接密着し、反応管１を閉塞
する。開口部１４とゲートバルブ７間にはＯリング１２
が設けられ、閉塞状態での気密性が維持されている。The opening 14 which connects the transfer chamber 6 and the reaction tube 1 is closed by the gate valve 7, and the air supply flange 17 is in direct contact with the valve seat 18 to close the reaction tube 1. An O-ring 12 is provided between the opening 14 and the gate valve 7.
Is provided to maintain the airtightness in the closed state.
【００１６】前記ウェーハ９の処理は前記ヒータ２で反
応管１内を所要温度に加熱し、更に前記熱媒体流路２１
に所要温度に加熱した熱媒体、即ち前記開口部１４に臨
接する壁面を、該壁面に反応副生成物が付着しない温度
に保持する加熱した熱媒体を流通させた状態で、前記ゲ
ートバルブ７を降下させ前記開口部１４を開いてウェー
ハ９を反応管１内に搬入し、その後前記ゲートバルブ７
で前記開口部１４を閉塞する。前記給気フランジ１７の
給気ポート１０より反応ガスが導入され、前記ウェーハ
９に成膜処理がなされ、反応後のガスは排気ポート１１
から排気される。In the processing of the wafer 9, the inside of the reaction tube 1 is heated to the required temperature by the heater 2, and the heat medium flow passage 21 is further processed.
In the state where the heating medium heated to the required temperature, that is, the heating surface that keeps the wall surface adjacent to the opening 14 at a temperature at which the reaction by-products do not adhere to the wall surface, is passed through the gate valve 7. The wafer 9 is loaded into the reaction tube 1 by lowering it and opening the opening 14, and then the gate valve 7
The opening 14 is closed with. A reaction gas is introduced from the air supply port 10 of the air supply flange 17, a film is formed on the wafer 9, and the gas after the reaction is exhausted from the exhaust port 11.
Exhausted from.
【００１７】上記した様に、前記給気フランジ１７が加
熱されているので開口部１４の壁面には反応副生成物が
付着することがない。又、前記給気フランジ１７と搬送
室６間には前記断熱材２０が介在し、更に前記給気フラ
ンジ１７と搬送室６とは非接触状態であるので、給気フ
ランジ１７から搬送室６への熱伝達が抑制され、前記熱
媒体流路２１による給気フランジ１７の加熱が効果的に
行われる。As described above, since the air supply flange 17 is heated, the reaction by-product does not adhere to the wall surface of the opening 14. Further, since the heat insulating material 20 is interposed between the air supply flange 17 and the transfer chamber 6, and the air supply flange 17 and the transfer chamber 6 are not in contact with each other, the air supply flange 17 is transferred to the transfer chamber 6. Is suppressed, and heating of the air supply flange 17 by the heat medium passage 21 is effectively performed.
【００１８】尚、前記給気フランジ１７を加熱する手段
としては前記熱媒体流路２１及び加熱媒体に代え加熱ヒ
ータを埋設してもよい。或は弁座１８と連結口１９との
間にも断熱材を設けてもよい。As a means for heating the air supply flange 17, a heater may be embedded instead of the heat medium passage 21 and the heating medium. Alternatively, a heat insulating material may be provided between the valve seat 18 and the connection port 19.
【００１９】[0019]
【発明の効果】以上述べた如く本発明によれば、給気フ
ランジを加熱する様にしたので、反応副生成物の付着を
抑制し、パーティクルを減少させることができ、又給気
フランジと搬送室間を断熱構造としたので給気フランジ
の加熱を効率よく行うことができ、更に搬送室が反応室
内部に露出しない構造であるので、金属汚染等を考慮す
る必要がなく材料の選択が自由になり、更に反応室の構
造を簡素化できる等の優れた効果を発揮する。As described above, according to the present invention, since the air supply flange is heated, it is possible to suppress the adhesion of reaction by-products and reduce the particles, and to convey the air supply flange and the carrier. Since the space between the chambers is adiabatic, the air supply flange can be heated efficiently, and since the transfer chamber is not exposed inside the reaction chamber, there is no need to consider metal contamination and the materials can be selected freely. In addition, excellent effects such as simplification of the structure of the reaction chamber can be achieved.
【図１】本発明の実施の形態の要部を示す断面図であ
る。FIG. 1 is a cross-sectional view showing a main part of an embodiment of the present invention.
【図２】従来例を示す断面図である。FIG. 2 is a sectional view showing a conventional example.
【図３】該従来例の要部を示す断面図である。FIG. 3 is a cross-sectional view showing a main part of the conventional example.
１ 反応管 ２ ヒータ ６ 搬送室 １７ 給気フランジ １８ 弁座 １９ 連結口 ２０ 断熱材 ２１ 熱媒体流路 1 reaction tube 2 heater 6 Transport room 17 Air supply flange 18 seat 19 connection 20 insulation 21 Heat medium flow path
フロントページの続き (56)参考文献 特開 平２−86123（ＪＰ，Ａ) 特開 平７−235531（ＪＰ，Ａ) 特開 平９−27486（ＪＰ，Ａ) 特開 平４−225517（ＪＰ，Ａ) 特開 平５−291158（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/3065 Continuation of the front page (56) Reference JP-A-2-86123 (JP, A) JP-A-7-235531 (JP, A) JP-A-9-27486 (JP, A) JP-A-4-225517 (JP , A) JP-A-5-291158 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/205 H01L 21/3065
Claims (2)
連設され、前記給気フランジから反応ガスが供給される
半導体製造装置に於いて、前記給気フランジに加熱手段
を設け、前記給気フランジと前記搬送室間に断熱材を設
けたことを特徴とする半導体製造装置。1. In a semiconductor manufacturing apparatus in which a transfer chamber is connected to a reaction tube via an air supply flange and a reaction gas is supplied from the air supply flange, a heating means is provided on the air supply flange. A semiconductor manufacturing apparatus, wherein a heat insulating material is provided between an air supply flange and the transfer chamber.
室と、ウェーハを該反応室に搬入出する搬送機を内部に
設けた搬送室とを、断熱材を介在して接続し、前記搬送
室と前記反応室とを連通する開口部を閉塞又は開放する
ゲートバルブを有し、前記断熱材は前記搬送室の外壁面
側に挾設されたことを特徴とする半導体製造装置。2. A transfer chamber for accommodating a wafer to be heat-treated and a transfer chamber provided with a transfer device for loading and unloading the wafer into and from the reaction chamber are connected via a heat insulating material, and the transfer is performed.
The opening communicating with the reaction chamber and the reaction chamber is closed or opened.
It has a gate valve, and the heat insulating material is an outer wall surface of the transfer chamber.
A semiconductor manufacturing apparatus characterized by being installed on the side .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26244595A JP3507220B2 (en) | 1995-09-14 | 1995-09-14 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26244595A JP3507220B2 (en) | 1995-09-14 | 1995-09-14 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0982650A JPH0982650A (en) | 1997-03-28 |
| JP3507220B2 true JP3507220B2 (en) | 2004-03-15 |
Family
ID=17375895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26244595A Expired - Lifetime JP3507220B2 (en) | 1995-09-14 | 1995-09-14 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3507220B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209063A (en) * | 2001-11-08 | 2003-07-25 | Tokyo Electron Ltd | Heat treatment apparatus and method therefor |
| US6800172B2 (en) | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
| US6814813B2 (en) | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
| US6858264B2 (en) | 2002-04-24 | 2005-02-22 | Micron Technology, Inc. | Chemical vapor deposition methods |
| JP4523225B2 (en) * | 2002-09-24 | 2010-08-11 | 東京エレクトロン株式会社 | Heat treatment equipment |
| US6926775B2 (en) * | 2003-02-11 | 2005-08-09 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
| US7214274B2 (en) * | 2003-03-17 | 2007-05-08 | Tokyo Electron Limited | Method and apparatus for thermally insulating adjacent temperature controlled processing chambers |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
-
1995
- 1995-09-14 JP JP26244595A patent/JP3507220B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0982650A (en) | 1997-03-28 |
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