JP3454885B2 - Semiconductor wafer cooling method and apparatus - Google Patents
Semiconductor wafer cooling method and apparatusInfo
- Publication number
- JP3454885B2 JP3454885B2 JP29126193A JP29126193A JP3454885B2 JP 3454885 B2 JP3454885 B2 JP 3454885B2 JP 29126193 A JP29126193 A JP 29126193A JP 29126193 A JP29126193 A JP 29126193A JP 3454885 B2 JP3454885 B2 JP 3454885B2
- Authority
- JP
- Japan
- Prior art keywords
- cooling
- temperature
- semiconductor wafer
- cooling plate
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Control Of Temperature (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、サーモモジュールによ
って高温の半導体ウエハを冷却する、半導体ウエハの冷
却方法及び冷却装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cooling method and a cooling apparatus for cooling a high temperature semiconductor wafer by a thermo module.
【０００２】[0002]
【従来の技術】図７はサーモモジュールを使用する公知
の半導体ウエハの冷却装置を示し、この冷却装置は、高
温（１５０〜２００℃）の半導体ウエハ１を冷却する冷
却板２と、その熱を放熱する放熱板３と、これらの板
２，３間のペルチェ素子よりなるサーモモジュール４，
・・と、冷却板２内に設けられその温度を検出して信号
を出力する制御用センサ５と、サーモモジュール４，・
・の通電量を制御する駆動回路（温度コントローラ）６
とを備え、該駆動回路６は、図８に示すように、冷却板
２の目標温度θpset（通常２３〜２５℃）と制御用セン
サ５が検出した冷却板の温度θp とを演算するＰＩＤ演
算機構７によりＰＩＤ制御され、これによって冷却板２
の温度θp が制御される。上記冷却板２は、該冷却板か
ら出没するウエハ押上ピン１０，・・と、半導体ウエハ
１を0.1 〜0.2mm 程度のエアギャップを設けて載置する
ためのギャップ用スぺーサ１１，・・とを備え、放熱板
３に冷却水の循環回路１２が設けられている。上記エア
ギャップは、半導体ウエハ１が冷却板２に接触して汚染
することを防止するために設けたものである。2. Description of the Related Art FIG. 7 shows a known semiconductor wafer cooling device using a thermomodule, which cools a cooling plate 2 for cooling a semiconductor wafer 1 at a high temperature (150 to 200 ° C.) and its heat. A heat radiating plate 3 for radiating heat and a thermo module 4 composed of a Peltier element between these plates 2 and 3
.., the control sensor 5 provided in the cooling plate 2 for detecting the temperature and outputting a signal, the thermo module 4 ,.
・ Drive circuit (temperature controller) 6 that controls the energization amount of
8, the drive circuit 6 calculates a target temperature θ pset (normally 23 to 25 ° C.) of the cooling plate 2 and a cooling plate temperature θ p detected by the control sensor 5, as shown in FIG. PID control is performed by the PID calculation mechanism 7, whereby the cooling plate 2
The temperature θ p of is controlled. The cooling plate 2 includes wafer push-up pins 10 protruding and retracted from the cooling plate, and a gap spacer 11 for mounting the semiconductor wafer 1 with an air gap of about 0.1 to 0.2 mm. The heat radiation plate 3 is provided with a cooling water circulation circuit 12. The air gap is provided to prevent the semiconductor wafer 1 from coming into contact with the cooling plate 2 and being contaminated.
【０００３】上記公知の冷却装置は、ウエハ押上ピン１
０，・・を冷却板２から突出させて高温の半導体ウエハ
１を載置した後、これらのピンを冷却板２に没入させる
と、ギャップ用スぺーサ１１，・・に載置された半導体
ウエハ１と冷却板２との間に所定のエアギャップが形成
され、ＰＩＤ演算機構７でＰＩＤ制御される駆動回路６
によりサーモモジュール４，・・への通電量が制御さ
れ、該サーモモジュール４，・・により冷却される冷却
板２が半導体ウエハ１を所望の温度に冷却し、その熱は
放熱板３から放熱される。しかしながら、上記冷却装置
は、半導体ウエハ１と冷却板２間のエアギャップによっ
て半導体ウエハ１から冷却板２への熱伝達が遅れるため
に、駆動回路６をフル作動にして冷却板２をフルに冷却
すると、冷却板２の温度が速やかに低下して、半導体ウ
エハ１の温度θw が十分に低下する前にサーモモジュー
ル４，・・による冷却板２の冷却が停止するので、結果
的に冷却時間が長くなる（４５〜６０秒）という問題が
ある。The above-mentioned known cooling device has a wafer push-up pin 1
When the high temperature semiconductor wafer 1 is placed by projecting 0, ... From the cooling plate 2 and then these pins are immersed in the cooling plate 2, the semiconductor placed on the gap spacer 11 ,. A drive circuit 6 in which a predetermined air gap is formed between the wafer 1 and the cooling plate 2 and which is PID controlled by the PID calculation mechanism 7.
The amount of electricity supplied to the thermomodules 4, ... Is controlled by the cooling modules 2, and the cooling plate 2 cooled by the thermomodules 4, ... Cools the semiconductor wafer 1 to a desired temperature. It However, in the above cooling device, the heat transfer from the semiconductor wafer 1 to the cooling plate 2 is delayed due to the air gap between the semiconductor wafer 1 and the cooling plate 2, so that the drive circuit 6 is fully operated to fully cool the cooling plate 2. Then, the temperature of the cooling plate 2 is rapidly decreased, and the cooling of the cooling plate 2 by the thermomodules 4, ... Is stopped before the temperature θ w of the semiconductor wafer 1 is sufficiently decreased. Is long (45 to 60 seconds).
【０００４】[0004]
【発明が解決しようとする課題】本発明が解決しようと
する課題は、冷却時間を短縮できる半導体ウエハの冷却
方法及びその装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor wafer cooling method and apparatus capable of shortening the cooling time.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するた
め、本発明の半導体ウエハの冷却方法は、冷却板の冷却
目標温度信号と冷却板の温度信号とによってＰＩＤ制御
される駆動回路でサーモモジュールの通電量を制御し
て、上記冷却板にエアギャップを設けて載置された高温
の半導体ウエハを冷却する半導体ウエハの冷却方法にお
いて、半導体ウエハの温度と冷却板の冷却目標温度との
温度差が大きいときは、上記駆動回路をフル作動として
冷却板をフルに冷却し、上記温度差が所定の差になった
ときは、駆動回路をＰＩＤ制御に切換えて冷却板を冷却
することを特徴としている。In order to solve the above-mentioned problems, a semiconductor wafer cooling method according to the present invention is a thermomodule in which a drive circuit is PID controlled by a cooling target temperature signal of a cooling plate and a temperature signal of the cooling plate. In the method of cooling a semiconductor wafer, in which a high-temperature semiconductor wafer placed with an air gap provided on the cooling plate is controlled by controlling the energization amount of When the temperature difference is large, the drive circuit is fully operated to fully cool the cooling plate, and when the temperature difference reaches a predetermined difference, the drive circuit is switched to PID control to cool the cooling plate. There is.
【０００６】また、同様の課題を解決するため、本発明
の半導体ウエハの冷却装置は、半導体ウエハを冷却する
冷却板と、その熱を放熱する放熱板と、これらの間のサ
ーモモジュールと、上記冷却板の温度を検出して信号を
出力する制御用センサと、冷却板の冷却目標温度信号と
上記制御用センサの信号とを演算するＰＩＤ演算機構
と、該ＰＩＤ演算機構によってＰＩＤ制御される上記サ
ーモモジュールの駆動回路とを備え、上記冷却板に設け
たギャップ用スぺーサに載置した高温の半導体ウエハを
冷却する半導体ウエハの冷却装置において、上記冷却装
置が、上記冷却板に載置された半導体ウエハの温度を計
測するウエハ温度計測用センサと、該ウエハ温度計測用
センサが計測した半導体ウエハの温度信号と制御用セン
サが検出した冷却板の冷却目標温度信号との差が大きい
ときは作動して上記駆動回路をフル作動とし、上記温度
差が所定の差になると非作動となるリレー要素と、該リ
レー要素の作動と非作動とによって駆動回路をフル作動
とＰＩＤ制御とに切換える制御切換スイッチとを備え、
上記温度差が大きいときは冷却板をフルに冷却し、温度
差が所定の差になると冷却板をＰＩＤ制御によって冷却
することを特徴としている。さらに、同様の課題を解決
するため、上記半導体ウエハの冷却装置において、ウエ
ハ温度計測用センサを、断熱材を介して冷却板に設けた
ことを特徴としている。In order to solve the same problem, a semiconductor wafer cooling apparatus according to the present invention includes a cooling plate for cooling a semiconductor wafer, a heat dissipation plate for radiating heat from the cooling plate, and a thermo module between them. A control sensor that detects the temperature of the cooling plate and outputs a signal, a PID calculation mechanism that calculates the cooling target temperature signal of the cooling plate and the signal of the control sensor, and PID control by the PID calculation mechanism. A cooling device for a semiconductor wafer, comprising a driving circuit for a thermo module and cooling a high-temperature semiconductor wafer mounted on a gap spacer provided on the cooling plate, wherein the cooling device is mounted on the cooling plate. Wafer temperature measuring sensor for measuring the temperature of the semiconductor wafer, and a semiconductor wafer temperature signal measured by the wafer temperature measuring sensor and a cooling plate detected by the control sensor When the difference from the cooling target temperature signal is large, the above-mentioned drive circuit is activated to full operation, and when the temperature difference reaches a predetermined difference, the relay element is inactivated, and the relay element is activated and deactivated. A control changeover switch for changing over the circuit between full operation and PID control;
When the temperature difference is large, the cooling plate is fully cooled, and when the temperature difference becomes a predetermined difference, the cooling plate is cooled by PID control. Further, in order to solve the same problem, the semiconductor wafer cooling device is characterized in that a wafer temperature measuring sensor is provided on a cooling plate via a heat insulating material.
【０００７】[0007]
【作用】冷却目標温度信号が入力された定常状態におい
ては、駆動回路はＰＩＤ演算機構でＰＩＤ制御され、冷
却板が冷却目標温度に冷却されている。冷却板のギャッ
プ用スぺーサに高温の半導体ウエハを載置すると、この
半導体ウエハの温度をウエハ温度計測用センサが計測
し、この計測温度信号と制御用センサから出力される冷
却板の冷却目標温度信号との差が大きいウエハの載置当
初は、リレー要素が作動して制御切換スイッチがＯＦＦ
となるので、駆動回路がフル作動に切換わってサーモモ
ジュールが冷却板をフルに冷却し、フル冷却された冷却
板によって半導体ウエハが速やかに冷却される。In the steady state in which the cooling target temperature signal is input, the drive circuit is PID controlled by the PID calculation mechanism and the cooling plate is cooled to the cooling target temperature. When a high-temperature semiconductor wafer is placed on the gap spacer of the cooling plate, the temperature of this semiconductor wafer is measured by the wafer temperature measuring sensor, and the cooling plate cooling target output from this measured temperature signal and the control sensor is measured. When a wafer with a large difference from the temperature signal is placed, the relay element is activated and the control switch is turned off.
Therefore, the drive circuit is switched to full operation, the thermomodule fully cools the cooling plate, and the fully cooled cooling plate quickly cools the semiconductor wafer.
【０００８】半導体ウエハの冷却により上記温度差が所
定の差になると、リレー要素が非作動となって制御切換
スイッチがＯＮとなるので、駆動回路がＰＩＤ演算機構
によるＰＩＤ制御に切換えられて冷却板を冷却し、半導
体ウエハの温度が所定の温度に冷却されて冷却が終了す
る。この場合、駆動回路をＰＩＤ制御に切換えた直後
は、冷却板が冷えすぎているために、サーモモジュール
が一時的に加熱動作になるが、サーモモジュールの加熱
量は冷却熱量の３倍近いために、加熱動作の時間は極め
て短時間であから、駆動回路をＰＩＤ制御のみで制御す
る従来の冷却と比べて、半導体ウエハの冷却時間を短縮
することができる。When the temperature difference reaches a predetermined value due to the cooling of the semiconductor wafer, the relay element is deactivated and the control changeover switch is turned on. Therefore, the drive circuit is changed over to the PID control by the PID calculation mechanism and the cooling plate. Is cooled, the temperature of the semiconductor wafer is cooled to a predetermined temperature, and the cooling is completed. In this case, immediately after the drive circuit is switched to the PID control, the thermomodule is temporarily heated because the cooling plate is too cold, but the heating amount of the thermomodule is close to three times the cooling heat amount. Since the heating operation time is extremely short, the semiconductor wafer cooling time can be shortened as compared with the conventional cooling in which the drive circuit is controlled only by PID control.
【０００９】[0009]
【実施例】図１及び図２は本発明の第１実施例を示し、
図１に示す半導体ウエハの冷却装置２０は、後記するウ
エハ温度計測用センサ２１、リレー素子２２及び制御切
換スイッチ２３（図２参照）を有する以外は、図７に示
す公知の冷却装置と同一の構成を備えているから、図の
同一の箇所に同一の符号を付して、詳細な説明は省略す
る。1 and 2 show a first embodiment of the present invention,
The semiconductor wafer cooling device 20 shown in FIG. 1 is the same as the known cooling device shown in FIG. 7 except that it has a wafer temperature measuring sensor 21, a relay element 22, and a control changeover switch 23 (see FIG. 2) described later. Since the configuration is provided, the same reference numerals are given to the same portions in the drawings, and detailed description will be omitted.
【００１０】上記ウエハ温度計測用センサ２１は、冷却
板２にエアギャップを有して載置された半導体ウエハ１
に近接した位置に設置され、該半導体ウエハ１の温度θ
w を計測して信号を出力するもので、セラミックスコー
トされた測温抵抗体、またはサーミスタによって構成さ
れている。しかしながら、ウエハ温度計測用センサ２１
は、後記するようにスイッチとして作用するものである
から、高精度のものである必要はない。リレー素子２２
は、ウエハ温度計測用センサ２１が計測した半導体ウエ
ハ１の温度θw と冷却板２の冷却目標温度θpsetとの温
度差ε1 が大きいときは作動して、駆動回路６をＰＩＤ
演算機構７によるＰＩＤ制御からサーモモジュール４，
・・のフル作動に切換えて冷却板２をフルに冷却し、温
度差が所定の値ε2 になると非作動となるものであり、
制御切換スイッチ２３は、上記リレー素子２２が作動し
たときはＯＦＦとなって駆動回路６のＰＩＤ制御を解除
し、非作動のときはＯＮとなって駆動回路６をＰＩＤ演
算機構７によるＰＩＤ制御に切換えるものである。The wafer temperature measuring sensor 21 is a semiconductor wafer 1 mounted on a cooling plate 2 with an air gap.
Installed at a position close to the
It measures w and outputs a signal. It consists of a resistance thermometer with a ceramic coating or a thermistor. However, the wafer temperature measuring sensor 21
Since it acts as a switch as described later, it does not need to be highly accurate. Relay element 22
Operates when the temperature difference ε 1 between the temperature θ w of the semiconductor wafer 1 measured by the wafer temperature measuring sensor 21 and the cooling target temperature θ pset of the cooling plate 2 is large, and the drive circuit 6 is driven by the PID.
From the PID control by the computing mechanism 7 to the thermo module 4,
.. is switched to full operation to fully cool the cooling plate 2, and becomes inoperative when the temperature difference reaches a predetermined value ε 2 ,
The control changeover switch 23 is turned off when the relay element 22 is operated to release the PID control of the drive circuit 6, and is turned on when the relay element 22 is not operated to control the drive circuit 6 by the PID calculation mechanism 7. It is something to switch.
【００１１】図２に示す第１実施例のブロック線図は、
図８に示す公知のブロック線図に、上記ウエハ温度計測
用センサ２１、リレー素子２２、制御切換スイッチ２
３、及び冷却目標温度θpsetが変化した場合にＯＦＦと
なる設定切換スイッチ２４を付加したものとして構成さ
れている。The block diagram of the first embodiment shown in FIG.
The known block diagram shown in FIG. 8 includes the wafer temperature measuring sensor 21, the relay element 22, and the control changeover switch 2.
3 and a setting changeover switch 24 which is turned off when the cooling target temperature θ pset changes.
【００１２】上記第１実施例は、冷却目標温度θpsetが
ＰＩＤ演算機構７に入力された定常状態においては、制
御切換スイッチ２３及び設定切換スイッチ２４が共にＯ
Ｎとなり、サーモモジュール４，・・の駆動回路６がＰ
ＩＤ演算機構７によってＰＩＤ制御され、これによって
冷却板２が冷却されている。高温の半導体ウエハ１を冷
却板２のギャップ用スぺーサ１１，・・に載置すると、
ウエハ計測用センサ２１が計測した半導体ウエハ１の温
度θw と冷却板２の冷却目標温度θpsetとの温度差が大
きいために、リレー素子２２が作動して制御切換スイッ
チ２３がＯＦＦとなるので、駆動回路６がＰＩＤ演算機
構７によるＰＩＤ制御からフル作動に切換わって、サー
モモジュール４，・・が冷却板２をフルに冷却する。In the first embodiment, in the steady state in which the cooling target temperature θ pset is input to the PID computing mechanism 7, both the control changeover switch 23 and the setting changeover switch 24 are turned off.
N, and the drive circuit 6 of the thermomodule 4, ...
PID control is performed by the ID calculation mechanism 7, and the cooling plate 2 is cooled by this. When the high temperature semiconductor wafer 1 is placed on the gap spacers 11 of the cooling plate 2 ,.
Since the temperature difference between the temperature θ w of the semiconductor wafer 1 measured by the wafer measuring sensor 21 and the cooling target temperature θ pset of the cooling plate 2 is large, the relay element 22 is activated and the control changeover switch 23 is turned off. , The drive circuit 6 switches from PID control by the PID calculation mechanism 7 to full operation, and the thermomodules 4, ... Cool the cooling plate 2 fully.
【００１３】半導体ウエハ１が冷却されて、半導体ウエ
ハ１の温度θw と冷却板２の冷却目標温度θpsetとの温
度差が所定の差ε2 になると、リレー素子２２が非作動
になるとともに制御切換スイッチ２３がＯＮとなって、
駆動回路６はＰＩＤ演算機構７によるＰＩＤ制御に切換
えられて冷却板２を冷却する（図３参照）。駆動回路６
がＰＩＤ制御に切換わった直後は、冷却板２が冷えすぎ
ているために、サーモモジュール４，・・が一時的に加
熱動作となるが、サーモモジュール４，・・の加熱量は
冷却熱量の約３倍であるから加熱時間は極めて短く、載
置当初にフルに冷却された冷却板２が半導体ウエハ１の
温度が所定の温度に低下するまで該ウエハを速やかに冷
却するので、公知のＰＩＤ制御のみによる冷却と比べ
て、半導体ウエハ１の冷却時間を短縮することができる
（図４参照）。When the semiconductor wafer 1 is cooled and the temperature difference between the temperature θ w of the semiconductor wafer 1 and the cooling target temperature θ pset of the cooling plate 2 becomes a predetermined difference ε 2 , the relay element 22 is deactivated. The control changeover switch 23 is turned on,
The drive circuit 6 is switched to PID control by the PID calculation mechanism 7 to cool the cooling plate 2 (see FIG. 3). Drive circuit 6
Immediately after switching to PID control, since the cooling plate 2 is too cold, the thermo-modules 4, ... Temporarily operate for heating, but the heating amount of the thermo-modules 4 ,. Since the heating time is extremely short because it is about three times, the cooling plate 2 which is fully cooled at the beginning of mounting quickly cools the semiconductor wafer 1 until the temperature of the semiconductor wafer 1 drops to a predetermined temperature. The cooling time of the semiconductor wafer 1 can be shortened as compared with the cooling only by control (see FIG. 4).
【００１４】図５は本発明の第２実施例を示し、第２実
施例におけるウエハ温度計測用センサ２１は、断熱材２
８を介して冷却板２７に取付けられている。また、図６
は本発明の第３実施例を示し、第３実施例のウエハ温度
計測用センサ３０はギャップ用スぺーサ兼用として構成
され、第２実施例と同様に断熱材２８を介して冷却板３
１に取付けられている。これらの実施例の他の構成は第
１実施例と同じであるから、図の主要な箇所に同一の符
号を付して詳細な説明は省略する。第２実施例は、ウエ
ハ温度計測用センサを設けるための別のスペースが不要
であり、第３実施例は、それに加えて、半導体ウエハ１
の温度を速やかに検出することができる。FIG. 5 shows a second embodiment of the present invention. The wafer temperature measuring sensor 21 in the second embodiment is a heat insulating material 2.
It is attached to the cooling plate 27 via 8. In addition, FIG.
Shows a third embodiment of the present invention. The wafer temperature measuring sensor 30 of the third embodiment is configured to also serve as a gap spacer, and like the second embodiment, the cooling plate 3 is provided via the heat insulating material 28.
1 is attached. Since the other structures of these embodiments are the same as those of the first embodiment, the same reference numerals are given to the main parts in the drawing, and the detailed description will be omitted. The second embodiment does not require a separate space for providing a wafer temperature measuring sensor, and the third embodiment additionally requires the semiconductor wafer 1
The temperature of can be detected promptly.
【００１５】[0015]
【発明の効果】本発明は、ウエハ温度計測用センサが冷
却板にエアギャップを有して載置した半導体ウエハの温
度を計測して、この計測温度と冷却板の冷却目標温度と
の温度差が大きいときは駆動回路をフル作動に切換えて
冷却板をフル冷却にして半導体ウエハを冷却するととも
に、その温度差が所定の差になるまでフル冷却を継続さ
せるので、半導体ウエハの冷却時間を短縮することがで
きる。また、ウエハ温度計測用センサを、断熱材を介し
て冷却板に設けたので、ウエハ温度計測用センサを設置
するためのスペースを考慮する必要がない。さらに、ウ
エハ温度計測用センサは、スイッチ作用をするのみであ
るから、安価なものにすることができる。According to the present invention, the wafer temperature measuring sensor measures the temperature of the semiconductor wafer mounted on the cooling plate with the air gap, and the temperature difference between the measured temperature and the cooling target temperature of the cooling plate. When the temperature is large, the drive circuit is switched to full operation to fully cool the cooling plate to cool the semiconductor wafer, and full cooling is continued until the temperature difference reaches a predetermined difference, thus shortening the semiconductor wafer cooling time. can do. Further, since the wafer temperature measuring sensor is provided on the cooling plate via the heat insulating material, it is not necessary to consider the space for installing the wafer temperature measuring sensor. Further, since the wafer temperature measuring sensor only has a switch function, it can be made inexpensive.
【図１】第１実施例の縦断正面図である。FIG. 1 is a vertical sectional front view of a first embodiment.
【図２】同じくブロック線図である。FIG. 2 is a block diagram of the same.
【図３】同じくフローシートである。FIG. 3 is also a flow sheet.
【図４】本発明と従来方法の温度及び時間の比較図であ
る。FIG. 4 is a comparison diagram of temperature and time of the present invention and a conventional method.
【図５】第２実施例の縦断正面図である。FIG. 5 is a vertical sectional front view of a second embodiment.
【図６】第３実施例の縦断正面図である。FIG. 6 is a vertical sectional front view of a third embodiment.
【図７】公知の冷却装置の縦断正面図である。FIG. 7 is a vertical sectional front view of a known cooling device.
【図８】同じくブロック線図である。FIG. 8 is a block diagram of the same.
１ 半導体ウエハ ２，２７，３１ 冷却板 ３ 放熱板 ４ サーモモジュール ５ 制御用センサ ６ 駆動回路 ７ ＰＩＤ演算機構 １１ ギャップ用スぺーサ ２０ 冷却装置 ２１，３０ ウエハ温度計測用センサ ２２ リレー素子 ２３ 制御切換スイッチ 1 Semiconductor wafer 2,27,31 Cooling plate 3 heat sink 4 Thermo module 5 Control sensor 6 drive circuit 7 PID calculation mechanism 11 Gap Spacer 20 Cooling device 21,30 Wafer temperature measurement sensor 22 Relay element 23 Control changeover switch
フロントページの続き (72)発明者 後 藤 洋 康 茨城県筑波郡谷和原村絹の台４−２−２ エスエムシー株式会社筑波技術センタ ー内 (56)参考文献 特開 平３−2912（ＪＰ，Ａ) 特開 平４−127516（ＪＰ，Ａ) 特開 平３−135011（ＪＰ，Ａ) 特開 昭60−193001（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G05D 23/00 - 23/32 G05B 11/00 - 13/04 H01M 21/68 Continued Front Page (72) Inventor Hiroyasu Goto 4-2-2 Kinunodai, Taniwahara-mura, Tsukuba-gun, Ibaraki SMC Corporation Tsukuba Technical Center (56) Reference JP-A-3-2912 (JP, A) JP-A-4-127516 (JP, A) JP-A-3-135011 (JP, A) JP-A-60-193001 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) G05D 23/00-23/32 G05B 11/00-13/04 H01M 21/68
Claims (3)
度信号とによってＰＩＤ制御される駆動回路でサーモモ
ジュールの通電量を制御して、上記冷却板にエアギャッ
プを設けて載置された高温の半導体ウエハを冷却する半
導体ウエハの冷却方法において、 半導体ウエハの温度と冷却板の冷却目標温度との温度差
が大きいときは、上記駆動回路をフル作動として冷却板
をフルに冷却し、上記温度差が所定の差になったとき
は、駆動回路をＰＩＤ制御に切換えて冷却板を冷却す
る、ことを特徴とする半導体ウエハの冷却方法。1. A drive circuit, which is PID-controlled by a cooling target temperature signal of a cooling plate and a temperature signal of the cooling plate, controls an energization amount of a thermo module to mount the cooling plate with an air gap. In the method of cooling a semiconductor wafer having a high temperature, when the temperature difference between the temperature of the semiconductor wafer and the cooling target temperature of the cooling plate is large, the driving circuit is fully operated to fully cool the cooling plate. A method of cooling a semiconductor wafer, wherein when the temperature difference reaches a predetermined difference, the drive circuit is switched to PID control to cool the cooling plate.
熱を放熱する放熱板と、これらの間のサーモモジュール
と、上記冷却板の温度を検出して信号を出力する制御用
センサと、冷却板の冷却目標温度信号と上記制御用セン
サの信号とを演算するＰＩＤ演算機構と、該ＰＩＤ演算
機構によってＰＩＤ制御される上記サーモモジュールの
駆動回路とを備え、上記冷却板に設けたギャップ用スぺ
ーサに載置した高温の半導体ウエハを冷却する半導体ウ
エハの冷却装置において、 上記冷却装置が、上記冷却板に載置された半導体ウエハ
の温度を計測するウエハ温度計測用センサと、該ウエハ
温度計測用センサが計測した半導体ウエハの温度信号と
制御用センサが検出した冷却板の冷却目標温度信号との
差が大きいときは作動して上記駆動回路をフル作動と
し、上記温度差が所定の差になると非作動となるリレー
要素と、該リレー要素の作動と非作動とによって駆動回
路をフル作動とＰＩＤ制御とに切換える制御切換スイッ
チとを備え、 上記温度差が大きいときは冷却板をフルに冷却し、温度
差が所定の差になると冷却板をＰＩＤ制御によって冷却
する、ことを特徴とする半導体ウエハの冷却装置。2. A cooling plate for cooling a semiconductor wafer, a heat radiating plate for radiating the heat of the semiconductor wafer, a thermo module between them, a control sensor for detecting the temperature of the cooling plate and outputting a signal, and a cooling module. The gap switch provided on the cooling plate includes a PID calculation mechanism that calculates a cooling target temperature signal of the plate and a signal of the control sensor, and a drive circuit of the thermo module that is PID-controlled by the PID calculation mechanism. A semiconductor wafer cooling device for cooling a high-temperature semiconductor wafer mounted on a spacer, wherein the cooling device measures a temperature of the semiconductor wafer mounted on the cooling plate, and a wafer temperature measuring sensor. When the difference between the semiconductor wafer temperature signal measured by the measuring sensor and the cooling target temperature signal of the cooling plate detected by the control sensor is large, the operation is activated and the drive circuit is fully activated. A relay element that is inactive when the temperature difference reaches a predetermined difference, and a control changeover switch that switches the drive circuit between full operation and PID control by operating and inactivating the relay element, A cooling device for a semiconductor wafer, wherein when the difference is large, the cooling plate is fully cooled, and when the temperature difference reaches a predetermined difference, the cooling plate is cooled by PID control.
て冷却板に設けた、ことを特徴とする請求項２に記載し
た半導体ウエハの冷却装置。3. The semiconductor wafer cooling device according to claim 2, wherein the wafer temperature measuring sensor is provided on the cooling plate via a heat insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29126193A JP3454885B2 (en) | 1993-10-27 | 1993-10-27 | Semiconductor wafer cooling method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29126193A JP3454885B2 (en) | 1993-10-27 | 1993-10-27 | Semiconductor wafer cooling method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07121246A JPH07121246A (en) | 1995-05-12 |
| JP3454885B2 true JP3454885B2 (en) | 2003-10-06 |
Family
ID=17766582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29126193A Expired - Fee Related JP3454885B2 (en) | 1993-10-27 | 1993-10-27 | Semiconductor wafer cooling method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3454885B2 (en) |
-
1993
- 1993-10-27 JP JP29126193A patent/JP3454885B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07121246A (en) | 1995-05-12 |
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