JP3444291B2 - Ceramic electronic component and method of manufacturing the same - Google Patents
Ceramic electronic component and method of manufacturing the sameInfo
- Publication number
- JP3444291B2 JP3444291B2 JP2001086616A JP2001086616A JP3444291B2 JP 3444291 B2 JP3444291 B2 JP 3444291B2 JP 2001086616 A JP2001086616 A JP 2001086616A JP 2001086616 A JP2001086616 A JP 2001086616A JP 3444291 B2 JP3444291 B2 JP 3444291B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- electronic component
- water repellent
- manufacturing
- ceramic electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、セラミック電子
部品およびその製造方法に関し、特に、たとえばセラミ
ック素体の端面に端子電極が形成されたセラミック電子
部品と、その製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic electronic component and a method for manufacturing the same, and more particularly to a ceramic electronic component having a terminal electrode formed on an end face of a ceramic body and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】セラミック電子部品は、導体とセラミッ
ク絶縁体からなるセラミック素体に、導体と導通する端
子電極が形成された構造を有している。端子電極は、セ
ラミック素体の端面に焼き付けられた外部電極と、外部
電極上に形成されるめっき皮膜とで形成される。めっき
皮膜としては、たとえば半田付けの際の耐半田性を得る
ためにＮｉめっき皮膜が形成され、さらに半田付き性を
良好とするために、ＳｎまたはＳｎ／Ｐｂなどのめっき
皮膜が形成される。このようなめっき皮膜は、めっき液
中で外部電極上に電気めっきを行なう、いわゆる湿式め
っき法によって形成される。2. Description of the Related Art A ceramic electronic component has a structure in which a terminal electrode which is electrically connected to a conductor is formed on a ceramic body composed of a conductor and a ceramic insulator. The terminal electrode is formed of an external electrode baked on the end surface of the ceramic body and a plating film formed on the external electrode. As the plating film, for example, a Ni plating film is formed to obtain soldering resistance during soldering, and a plating film such as Sn or Sn / Pb is formed to improve solderability. Such a plating film is formed by a so-called wet plating method in which electroplating is performed on an external electrode in a plating solution.
【０００３】セラミック電子部品においては、焼き付け
によって形成される外部電極に微細な空隙が存在する。
また、セラミック素体に内部電極が形成されている場合
には、内部電極とセラミック絶縁体との界面にも微細な
空隙が存在する。したがって、外部電極が焼き付けられ
たセラミック素体をめっき液中に浸漬すると、めっき液
が外部電極の空隙内および空隙を通してセラミック素体
内に侵入して残留することになる。In ceramic electronic parts, there are fine voids in the external electrodes formed by baking.
Further, when the internal electrodes are formed on the ceramic body, fine voids also exist at the interface between the internal electrodes and the ceramic insulator. Therefore, when the ceramic element body having the external electrodes baked thereon is immersed in the plating solution, the plating solution enters and remains in the ceramic element body through the voids of the external electrode and through the voids.
【０００４】めっき液は、主として、Ｎｉ、Ｓｎあるい
はＳｎ／Ｐｂなどの各種金属の塩からなり、セラミック
素体中に残留すると、それ自体が異質誘電体として挙動
する結果、電子部品の特性、たとえば静電容量や誘電体
損失などにばらつきが生じる。また、水分の存在下では
イオンとして移行し、絶縁抵抗値を低下させるなどの原
因となっている。The plating solution is mainly composed of salts of various metals such as Ni, Sn or Sn / Pb, and when it remains in the ceramic body, it behaves as a foreign dielectric itself, resulting in the characteristics of electronic parts such as Variations occur in capacitance and dielectric loss. Further, in the presence of water, it migrates as ions, which causes a decrease in insulation resistance value.
【０００５】このようなめっき液の侵入を防止するため
に、たとえば外部電極が焼き付けられたセラミック素体
にシリコンまたはフェノールなどの熱硬化性樹脂を含浸
させた後、樹脂を硬化させて表面の余分な樹脂を研磨に
より除去したり、溶剤などによって余分な樹脂を洗浄す
る方法がある。このような方法により、セラミック素体
や外部電極の空隙を樹脂で封止し、外部電極表面に湿式
めっきによってめっき皮膜が形成される。In order to prevent such invasion of the plating solution, for example, a ceramic body on which external electrodes are baked is impregnated with a thermosetting resin such as silicon or phenol, and then the resin is cured to leave an extra surface. There is a method of removing unnecessary resin by polishing, or a method of washing excess resin with a solvent or the like. By such a method, the voids of the ceramic body and the external electrodes are sealed with a resin, and a plating film is formed on the surfaces of the external electrodes by wet plating.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、このよ
うな方法では、樹脂を熱硬化させる必要があり、熱硬化
により外部電極表面に付着した余分な樹脂は、研磨や洗
浄などの方法で除去する必要がある。このように、セラ
ミック素体に樹脂を含浸させる方法では、製造工程が複
雑になり、量産性に欠け、またコストアップにつながる
という問題がある。However, in such a method, it is necessary to thermally cure the resin, and excess resin attached to the surface of the external electrode due to the thermal curing needs to be removed by a method such as polishing or washing. There is. As described above, the method of impregnating the ceramic body with the resin has problems that the manufacturing process is complicated, mass productivity is insufficient, and the cost is increased.
【０００７】さらに、完成したセラミック電子部品に合
成樹脂が残存すると、電子部品をプリント基板に実装す
る際、あるいは実装された後に高温・高湿環境下で使用
される場合、空隙に残存した樹脂が溶解あるいは変質し
て、電子部品の信頼性を損なう恐れがある。Further, if the synthetic resin remains in the completed ceramic electronic component, the resin remaining in the void may remain when the electronic component is mounted on a printed circuit board or is used in a high temperature and high humidity environment after being mounted. There is a risk of melting or degrading and impairing the reliability of electronic components.
【０００８】それゆえに、この発明の主たる目的は、セ
ラミック素体にめっきが侵入していないセラミック電子
部品と、簡単にそのようなセラミック電子部品を製造す
ることができるセラミック電子部品の製造方法を提供す
ることである。Therefore, the main object of the present invention is to provide a ceramic electronic component in which plating has not penetrated into the ceramic body and a method for producing a ceramic electronic component capable of easily manufacturing such a ceramic electronic component. It is to be.
【０００９】[0009]
【課題を解決するための手段】この発明は、セラミック
素体と、セラミック素体の端面に形成される外部電極
と、外部電極上に形成されるめっき皮膜とを含むセラミ
ック電子部品の製造方法であって、撥水処理剤によって
セラミック素体に形成された外部電極に撥水処理を施す
ことによりめっき液侵入防止皮膜を形成する工程と、外
部電極上にめっき処理を施す工程とを含み、撥水処理剤
は、Ｒａ−（ＣＨ2 ）−Ｓｉ−（Ｏ−Ｒｂ）3 で表され
る式において、Ｒａが疎水性を有する官能基であり、Ｒ
ｂに相当する官能基の少なくとも１つを加水分解するこ
とによって水酸基に置換したことを特徴とする、セラミ
ック電子部品の製造方法である。このようなセラミック
電子部品の製造方法において、セラミック素体に撥水処
理を行なう際、水酸基に置換した基が、加水分解前の基
に対して２〜８０％含有される撥水処理剤を用いること
が好ましい。また、めっき液侵入防止皮膜を形成する工
程の後に、加熱による撥水処理剤の縮重合により外部電
極と撥水処理剤とを共有結合させる工程を含めてもよ
い。このようなセラミック電子部品の製造方法におい
て、セラミック素体として、セラミックと内部電極とか
らなるセラミック素体を用いることができる。さらに、
外部電極は、たとえば電極ペーストを塗布し、焼き付け
ることによって形成される。また、この発明は、上述の
いずれかに記載のセラミック電子部品の製造方法で製造
された、セラミック電子部品である。The present invention is a method for manufacturing a ceramic electronic component including a ceramic body, an external electrode formed on an end surface of the ceramic body, and a plating film formed on the external electrode. Therefore, the method includes a step of forming a plating solution invasion preventive film by subjecting an external electrode formed on the ceramic body to a water repellent treatment with a water repellent treatment agent, and a step of performing a plating treatment on the external electrode. WTA, in Ra- (CH 2) -Si- (O -Rb) represented by formula 3, a functional group Ra is a hydrophobic, R
A method for producing a ceramic electronic component, characterized in that at least one of the functional groups corresponding to b is substituted with a hydroxyl group by hydrolysis. In such a method for producing a ceramic electronic component, when the ceramic body is subjected to water repellent treatment, a water repellent treatment agent in which the groups substituted with hydroxyl groups are contained in 2 to 80% of the groups before hydrolysis is used. It is preferable. In addition, after the step of forming the plating solution intrusion preventing film, a step of covalently bonding the external electrode and the water repellent agent by polycondensation of the water repellent agent by heating may be included. In such a method of manufacturing a ceramic electronic component, a ceramic element body including a ceramic and internal electrodes can be used as the ceramic element body. further,
The external electrode is formed, for example, by applying an electrode paste and baking it. Further, the present invention is a ceramic electronic component manufactured by the method for manufacturing a ceramic electronic component described in any of the above.
【００１０】Ｒａ−（ＣＨ2 ）−Ｓｉ−（Ｏ−Ｒｂ）3
で表される撥水処理剤において、Ｒｂに相当する官能基
を電極に対して吸着性のある水酸基に置換することによ
り、撥水処理剤の外部電極への吸着力を高めることがで
きる。このとき、水酸基に置換した基が、加水分解前の
基に対して２〜８０％含有される撥水処理剤を用いるこ
とにより、優れた撥水効果を得ることができる。水酸基
に置換した基が、加水分解前の基に対して２％未満であ
ると、十分な撥水処理剤の吸着効果が得られず、８０％
を超えると、撥水処理剤の吸着量が多くなりすぎ、めっ
き付き性が悪くなる。外部電極に撥水処理剤を吸着させ
た後、過熱して縮重合させ、撥水処理剤と外部電極とを
共有結合させることにより、耐磨耗性に優れためっき液
侵入防止皮膜を形成することができる。このような電極
形成方法用いたセラミック電子部品では、外部電極上へ
のめっき工程において、セラミック素体へのめっき液の
侵入を防ぐことができ、めっき液によるセラミック電子
部品の特性の変化を防止することができる。Ra- (CH 2 ) -Si- (O-Rb) 3
In the water repellent treatment represented by, by substituting a functional group corresponding to Rb with a hydroxyl group that is adsorptive to the electrode, it is possible to enhance the adsorptivity of the water repellent treatment to the external electrode. At this time, an excellent water repellency effect can be obtained by using a water repellent treatment agent in which the group substituted with a hydroxyl group is contained in an amount of 2 to 80% of the group before hydrolysis. If the group substituted with a hydroxyl group is less than 2% with respect to the group before hydrolysis, a sufficient water-repellent agent adsorption effect cannot be obtained and 80%
When it exceeds, the adsorption amount of the water repellent treatment agent becomes too large and the plating property deteriorates. After the water repellent agent is adsorbed on the external electrode, it is overheated to cause polycondensation, and the water repellent agent and the external electrode are covalently bonded to form a plating solution intrusion prevention film having excellent wear resistance. be able to. In the ceramic electronic component using such an electrode forming method, it is possible to prevent the plating solution from entering the ceramic body during the plating process on the external electrode, and prevent the change of the characteristics of the ceramic electronic component due to the plating solution. be able to.
【００１１】この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の発明の実施
の形態の詳細な説明から一層明らかとなろう。The above-mentioned objects, other objects, features and advantages of the present invention will be more apparent from the following detailed description of the embodiments of the invention with reference to the drawings.
【００１２】[0012]
【発明の実施の形態】図１はこの発明の製造方法が適用
されるセラミック電子部品の一例を示す斜視図であり、
図２はその断面図である。セラミック電子部品１０は、
セラミック素体１２を含む。セラミック素体１２として
は、たとえば積層セラミックコンデンサ用のものが用い
られる。積層セラミックコンデンサ用のセラミック素体
１２は、セラミックグリーンシート上に電極材料が印刷
され、複数のセラミックグリーンシートが積層・圧着さ
れた後、焼成されることにより形成される。1 is a perspective view showing an example of a ceramic electronic component to which the manufacturing method of the present invention is applied,
FIG. 2 is a sectional view thereof. The ceramic electronic component 10
A ceramic body 12 is included. As the ceramic body 12, for example, one for a laminated ceramic capacitor is used. The ceramic body 12 for a monolithic ceramic capacitor is formed by printing an electrode material on a ceramic green sheet, laminating and pressing a plurality of ceramic green sheets, and then firing the laminated sheets.
【００１３】このようにして得られたセラミック素体１
２は、電極材料を焼成することによって形成された内部
電極が交互に両端面に露出した構造を有している。この
ように内部電極が露出したセラミック素体１２の両端面
に、端子電極１４ａ，１４ｂが形成される。端子電極１
４ａ，１４ｂは、それぞれ外部電極１６ａ，１６ｂと、
その上に形成されるめっき皮膜１８ａ，１８ｂとで形成
される。なお、めっき皮膜１８ａ，１８ｂとしては、１
層のものに限らず、多層に形成されたものであってもよ
い。たとえば、外部電極１６ａ，１６ｂ上に、耐半田性
を有するＮｉめっき層を形成し、さらに半田付き性の良
好なＳｎめっき層やＳｎ／Ｐｂめっき層などを形成する
ことが考えられる。また、セラミック素体２としては、
チップインダクタ用やチップ抵抗用のものなどの他のセ
ラミック素体を用いることができる。The ceramic body 1 thus obtained
No. 2 has a structure in which internal electrodes formed by firing an electrode material are alternately exposed on both end faces. Thus, the terminal electrodes 14a and 14b are formed on both end surfaces of the ceramic body 12 with the internal electrodes exposed. Terminal electrode 1
4a and 14b are external electrodes 16a and 16b,
It is formed with the plating films 18a and 18b formed thereon. In addition, as the plating films 18a and 18b, 1
The layer is not limited to a layer, and may be a layer formed in multiple layers. For example, it is conceivable to form a Ni plating layer having solder resistance on the external electrodes 16a and 16b, and further form an Sn plating layer or a Sn / Pb plating layer having good solderability. Further, as the ceramic body 2,
Other ceramic bodies such as those for chip inductors and chip resistors can be used.
【００１４】外部電極１６ａ，１６ｂは、セラミック素
体１２の両端面に電極ペーストを塗布し、焼き付けるこ
とによって形成される。電極ペーストにはガラスフリッ
トが含まれるため、焼き付けることによって、外部電極
１６ａ，１６ｂは多孔質な構造となる。さらに、湿式め
っき法により外部電極１６ａ，１６ｂ上にめっき皮膜１
８ａ，１８ｂが形成されるが、このとき、めっき液が外
部電極１６ａ，１６ｂの空隙を通してセラミック素体１
２に侵入しないように、めっき工程の前に撥水処理が施
される。The external electrodes 16a and 16b are formed by applying an electrode paste to both end faces of the ceramic body 12 and baking it. Since the electrode paste contains glass frit, the external electrodes 16a and 16b have a porous structure by baking. Furthermore, the plating film 1 is formed on the external electrodes 16a and 16b by the wet plating method.
8a and 18b are formed. At this time, the plating solution passes through the voids of the external electrodes 16a and 16b and the ceramic body 1 is formed.
A water repellent treatment is applied before the plating process so as not to penetrate into 2.
【００１５】撥水処理を行うための撥水処理剤は、Ｒａ
−（ＣＨ2 ）−Ｓｉ−（Ｏ−Ｒｂ） 3 で表され、この式
のＲｂに相当する官能基の少なくとも１つが、加水分解
することによって水酸基に置換される。この水酸基が、
外部電極１６ａ，１６ｂに吸着しやすい官能基として働
く。また、Ｒａはめっき液がセラミック基体１２に侵入
することを防ぐ疎水性の官能基であり、たとえば、アル
キル基、ビニル基、フェニル基、パーフルオロ基から選
ばれる少なくとも１種類である。このとき、水酸基に置
換した基が、加水分解前の基に対して２〜８０％含有さ
れる撥水処理剤を用いることにより、優れた撥水効果を
得ることができる。水酸基に置換した基が、加水分解前
の基に対して２％未満であると、十分な撥水処理剤の吸
着効果が得られず、８０％を超えると、撥水処理剤の吸
着量が多くなりすぎ、めっき付き性が悪くなる。水酸基
の含有量は、加水分解を行なう時間によって制御するこ
とができる。The water repellent treatment agent for performing the water repellent treatment is Ra
-(CH2 ) -Si- (O-Rb) 3Represented by this formula
At least one of the functional groups corresponding to Rb of
By doing so, it is substituted with a hydroxyl group. This hydroxyl group
Acts as a functional group that is easily adsorbed on the external electrodes 16a, 16b
Ku. Further, for Ra, the plating solution penetrates into the ceramic substrate 12.
Is a hydrophobic functional group that prevents
Select from Kill group, Vinyl group, Phenyl group, Perfluoro group
There is at least one type that can be found. At this time, place it on the hydroxyl group.
The content of the converted group is 2 to 80% based on the group before hydrolysis.
By using the water repellent treatment
Obtainable. The group substituted with the hydroxyl group is not hydrolyzed
When it is less than 2% with respect to the group of
If the water repellent effect is not obtained and exceeds 80%, the water-repellent agent will not be absorbed.
The amount of coating becomes too large and the plating property deteriorates. Hydroxyl group
The content of can be controlled by the time of hydrolysis.
You can
【００１６】このような撥水処理剤に外部電極１６ａ，
１６ｂが形成されたセラミック素体１２を浸漬して、外
部電極１６ａ，１６ｂに撥水処理剤を付着させて、さら
に風乾することにより、めっき液侵入防止皮膜が形成さ
れる。このとき、撥水処理剤に電極に対する吸着性の良
好な水酸基が含まれていることにより、外部電極１６
ａ，１６ｂへの撥水処理剤の吸着力を高めることができ
る。External electrodes 16a,
The plating solution intrusion preventing film is formed by immersing the ceramic body 12 on which 16b is formed, applying a water repellent treatment agent to the external electrodes 16a and 16b, and further air-drying. At this time, since the water repellent treatment agent contains a hydroxyl group having a good adsorptivity to the electrode, the external electrode 16
The adsorptivity of the water repellent treatment agent to a and 16b can be increased.
【００１７】次に、めっき処理により、外部電極１６
ａ，１６ｂの上にめっき皮膜１８ａ，１８ｂが形成され
る。このめっき工程において、外部電極１６ａ，１６ｂ
に撥水処理剤が付着しているため、疎水性を有する官能
基の働きによって、めっき液が外部電極１６ａ，１６ｂ
の空隙からセラミック素体１２に侵入することが防止さ
れる。したがって、セラミック素体１２の特性がめっき
液の侵入によって変化せず、特性ばらつきのないセラミ
ック電子部品１０を得ることができる。Next, the external electrode 16 is subjected to plating treatment.
Plating films 18a and 18b are formed on a and 16b. In this plating process, the external electrodes 16a, 16b
Since the water-repellent agent is attached to the surface of the outer electrodes 16a and 16b, the plating solution is activated by the function of the hydrophobic functional group.
The ceramic body 12 is prevented from entering through the voids. Therefore, the characteristics of the ceramic body 12 do not change due to the invasion of the plating solution, and the ceramic electronic component 10 having no characteristic variations can be obtained.
【００１８】また、撥水処理剤に外部電極１６ａ，１６
ｂを浸漬した後、加熱により撥水処理剤を縮重合させ、
撥水処理剤と外部電極１６ａ，１６ｂとを共有結合させ
てもよい。このような処理を施すことにより、撥水処理
剤と外部電極１６ａ，１６ｂとが強力に結合し、撥水処
理剤の耐磨耗性を高めることができ、外部電極１６ａ，
１６ｂのシール性を維持することが可能となる。Further, the external electrodes 16a, 16 are added to the water repellent agent.
After dipping b, the water repellent agent is polycondensed by heating,
The water repellent agent may be covalently bonded to the external electrodes 16a and 16b. By performing such a treatment, the water repellent treatment agent and the external electrodes 16a and 16b are strongly bonded to each other, and the abrasion resistance of the water repellent treatment agent can be enhanced.
It is possible to maintain the sealing property of 16b.
【００１９】このように、撥水処理剤の一部をＯＨ化す
ることにより、この水酸基が吸着基として働き、撥水処
理剤を金属に吸着させることができる。このとき、全て
の撥水処理剤をＯＨ化しないことにより、金属への吸着
性の弱い撥水処理剤が残り、ＯＨ基をもつものが強く電
極に吸着され、ＯＨ化されていないものの吸着性は弱い
状態に保たれる。そのため、セラミック素体の外部電極
に形成された撥水処理剤皮膜は網目状になると考えら
れ、このような網目状構造により、外部電極へのめっき
付き性は確保されながら、撥水作用が維持されるものと
考えられる。As described above, by partially converting the water repellent treatment agent to OH, the hydroxyl group functions as an adsorption group, and the water repellent treatment agent can be adsorbed on the metal. At this time, by not making all the water repellent treatments OH, the water repellent treatments having weak adsorptivity to metal remain, those having an OH group are strongly adsorbed to the electrode, and those not OH adsorbed. Is kept weak. Therefore, it is considered that the water-repellent agent coating formed on the external electrodes of the ceramic body has a mesh-like structure, and such a mesh-like structure maintains the water-repellent effect while ensuring the plating adherence to the external electrodes. It is thought to be done.
【００２０】[0020]
【実施例】（実施例１）外部電極としてＣｕ下地電極が
形成された積層セラミックコンデンサ用のセラミック素
体を準備した。下地電極焼付後に、撥水処理を行なうた
めに、撥水処理剤を準備した。撥水処理剤として、Ｒａ
−（ＣＨ2 ）−Ｓｉ−（ＯＣＨ3 ）3 を準備した。この
処理剤を水分を含有させたイソプロピルアルコールに３
０ｇ／Ｌ投入して、ＣＨ3 の加水分解を進めた。イソプ
ロピルアルコールは水溶性の溶媒であり、加水分解に必
要なものである。また、Ｒａは、疎水性を有する官能基
として働くパーフルオロ基である。Example 1 A ceramic body for a laminated ceramic capacitor having a Cu base electrode as an external electrode was prepared. A water repellent treatment agent was prepared to perform a water repellent treatment after baking the base electrode. Ra as a water repellent agent
- (CH 2) -Si- was prepared (OCH 3) 3. Add this treatment to isopropyl alcohol containing water 3
0 g / L was added to promote the hydrolysis of CH 3 . Isopropyl alcohol is a water-soluble solvent and is necessary for hydrolysis. Ra is a perfluoro group that functions as a hydrophobic functional group.
【００２１】ＣＨ3 の加水分解を行なったのちに、Ｘ線
光電子分光分析装置でのケミカルシフトから、−ＯＨの
生成量を求めた。作製した処理剤のＯＨ含有量は、元の
処理剤に対して、２，１０，５０，８０，９０％とし
た。この撥水処理剤に下地電極を形成したセラミック素
体を２分間浸漬処理し、液切り、風乾した後、Ｎｉめっ
き、Ｓｎめっきを順次行なって積層セラミックコンデン
サを作製した。After the hydrolysis of CH 3, the amount of -OH produced was determined from the chemical shift in an X-ray photoelectron spectroscopy analyzer. The OH content of the prepared treating agent was 2, 10, 50, 80, 90% with respect to the original treating agent. A ceramic element body having a base electrode formed thereon was dipped in this water repellent agent for 2 minutes, drained, air-dried, and then Ni-plated and Sn-plated in that order to produce a laminated ceramic capacitor.
【００２２】得られた積層セラミックコンデンサについ
て、断面構造における外部電極内部へのめっき皮膜形成
状態、Ｎｉめっき連続性、半田付き性、および温度８５
℃で湿度８５％の恒温槽において４ＷＶ印加し、１００
０時間経過後の絶縁抵抗不良品数（耐湿負荷試験）を評
価実施した。ここで、１ＷＶは積層セラミックコンデン
サの定格電圧を示し、４ＷＶは定格電圧の４倍の電圧を
印加したことを示す。比較例として、撥水処理を行わず
にめっき皮膜を形成した積層セラミックコンデンサ、Ｒ
ａ−（ＣＨ2 ）−Ｓｉ−（ＯＣＨ3 ）3 のＣＨ3 を加水
分解しない処理剤を用いた積層セラミックコンデンサ、
および外部電極に樹脂を含浸させた後にめっき皮膜を形
成した積層セラミックコンデンサについて、同様の評価
を行なった。そして、その結果を表１に示した。表１の
中の分数について、分母は評価したサンプル数を示し、
分子は各項目に該当する積層セラミックコンデンサの不
良個数を示す。Regarding the obtained monolithic ceramic capacitor, the state of plating film formation inside the external electrode in the sectional structure, Ni plating continuity, solderability, and temperature 85
Apply 4 WV in a constant temperature bath at 85 ° C and 85% humidity for 100
The number of defective insulation resistances after a lapse of 0 hours (moisture resistance load test) was evaluated. Here, 1WV indicates the rated voltage of the monolithic ceramic capacitor, and 4WV indicates that a voltage four times the rated voltage is applied. As a comparative example, a multilayer ceramic capacitor having a plating film formed without water repellent treatment, R
a- (CH 2) -Si- (OCH 3) multilayer ceramic capacitor using the 3 CH 3 hydrolysed without treatment agent,
The same evaluation was performed on the laminated ceramic capacitor in which the plating film was formed after the external electrodes were impregnated with the resin. The results are shown in Table 1. For the fractions in Table 1, the denominator indicates the number of samples evaluated,
The numerator indicates the number of defective multilayer ceramic capacitors corresponding to each item.
【００２３】[0023]
【表１】 [Table 1]
【００２４】表１からわかるように、この発明の電極形
成方法を採用したものでは、電極内へのめっきの侵入は
なく、Ｎｉめっき連続性および半田付き性も良好で、耐
湿負荷試験においても絶縁抵抗の劣化は見られなかっ
た。それに対して、撥水処理を行わなかったものや加水
分解していない処理剤を用いたものでは、電極内へのめ
っきの侵入のあるものが見られ、絶縁抵抗の劣化するも
のも発見された。また、樹脂を含浸させたものや、ＯＨ
基量を９０％とした撥水処理剤を用いたものでは、Ｎｉ
めっき連続性および半田付き性が不良であるものが見ら
れた。これらは、外部電極表面の樹脂が十分に除去され
なかったり、撥水処理剤の付着量が多すぎたため、Ｎｉ
めっき皮膜の形成がよくなかったものであると考えられ
る。As can be seen from Table 1, in the case where the electrode forming method of the present invention is adopted, there is no penetration of plating into the electrode, the Ni plating continuity and solderability are good, and insulation is obtained even in a humidity resistance load test. No deterioration of resistance was observed. On the other hand, in the case where the water repellent treatment was not carried out or the treatment agent which was not hydrolyzed was used, there was a case where the plating penetrated into the electrode, and a case where the insulation resistance was deteriorated was also found. . Also, resin impregnated, OH
In the case of using a water repellent treatment agent having a base content of 90%, Ni
It was found that the plating continuity and solderability were poor. These are because the resin on the surface of the external electrode was not sufficiently removed or the amount of the water repellent treatment agent attached was too large.
It is considered that the formation of the plating film was not good.
【００２５】このように、この発明の撥水処理を行うこ
とにより、吸着基として働く水酸基により撥水処理剤が
外部電極に吸着され、外部電極のシール効果を得ること
ができる。ただし、撥水処理剤の加水分解が進んで、Ｏ
Ｈ基の含有量が８０％を超えると、撥水処理剤の吸着量
が多くなり、撥水効果が高くなりすぎて、めっき付き性
が悪くなる。また、ＯＨ基の含有量が２％未満では、撥
水処理剤の吸着量が少なくなり、十分な撥水効果が得ら
れない。そのため、撥水処理剤におけるＯＨ基の含有量
は、２〜８０％の範囲にあることが好ましい。As described above, by performing the water repellent treatment of the present invention, the water repellent treatment agent is adsorbed to the external electrode by the hydroxyl group acting as an adsorption group, and the sealing effect of the external electrode can be obtained. However, due to the progress of hydrolysis of the water repellent treatment,
If the H group content exceeds 80%, the amount of the water repellent treatment agent adsorbed increases, the water repellent effect becomes too high, and the plating property deteriorates. Further, if the content of the OH group is less than 2%, the adsorbed amount of the water repellent treatment agent becomes small, and a sufficient water repellent effect cannot be obtained. Therefore, the content of OH groups in the water repellent treatment agent is preferably in the range of 2 to 80%.
【００２６】（実施例２）実施例１と同様に、加水分解
した撥水処理剤に下地電極を形成した積層セラミックコ
ンデンサ用のセラミック素体を２分間撥水処理剤に浸漬
処理し、液切り、風乾した。その後、セラミック素体を
オーブンに入れ、１００〜１２０℃で３０分間熱処理し
た。比較例として、実施例１と同様に、熱処理を行なわ
ないで加水分解した撥水処理剤を吸着させたセラミック
素体を準備した。そして、量産工程でのハンドリングに
よる撥水処理剤の剥落を想定して、これらのセラミック
素体について、２Ｌポリポットで６０ｒｐｍ、３０分間
のバレル処理を行った。さらに、下地電極上にＮｉめっ
き、Ｓｎめっきを順次行なって積層セラミックコンデン
サを作製した。これらの積層セラミックコンデンサにつ
いて、実施例１と同様にして、電極内へのめっきの侵
入、Ｎｉめっき連続性、半田付き性、耐湿負荷試験を行
ない、その結果を表２に示した。(Example 2) As in Example 1, a hydrolyzed water repellent agent was immersed in a water repellent agent for 2 minutes to dip a ceramic body for a laminated ceramic capacitor in which a base electrode was formed, and drained. , Air dried. Then, the ceramic body was put in an oven and heat-treated at 100 to 120 ° C. for 30 minutes. As a comparative example, in the same manner as in Example 1, a ceramic element body was prepared on which a hydrolyzed water repellent agent was adsorbed without heat treatment. Then, assuming that the water repellent treatment agent would come off due to handling in the mass production process, barrel treatment was performed on these ceramic bodies in a 2 L polypot at 60 rpm for 30 minutes. Further, Ni plating and Sn plating were sequentially performed on the base electrode to produce a laminated ceramic capacitor. These monolithic ceramic capacitors were subjected to plating penetration into electrodes, Ni plating continuity, solderability, and moisture resistance load test in the same manner as in Example 1, and the results are shown in Table 2.
【００２７】[0027]
【表２】 [Table 2]
【００２８】表２からわかるように、風乾のみの場合、
耐湿負荷試験において、絶縁抵抗が劣化したものが見ら
れた。これは、バレル処理によって、撥水処理剤皮膜が
剥離したためであると考えられる。それに対して、熱処
理を行った場合、撥水処理剤が縮重合して下地電極と共
有結合し、バレル処理によっても撥水処理剤が剥離せ
ず、耐湿負荷試験においても絶縁抵抗の劣化は見られな
かった。As can be seen from Table 2, in the case of air drying only,
In the moisture resistance load test, it was found that the insulation resistance was deteriorated. It is considered that this is because the water repellent coating film was peeled off by the barrel treatment. On the other hand, when the heat treatment is performed, the water repellent treatment agent is polycondensed and covalently bonds to the base electrode, the water repellent treatment agent is not peeled off even by the barrel treatment, and the insulation resistance is not deteriorated even in the humidity load test. I couldn't do it.
【００２９】[0029]
【発明の効果】この発明によれば、撥水処理剤が外部電
極に十分に吸着され、撥水効果が得られるため、めっき
液がセラミック素体に侵入することを防止することがで
きる。しかも、外部電極が形成されたセラミック素体を
撥水処理剤に浸漬して、乾燥するだけで、簡単にセラミ
ック電子部品を作製することができる。さらに、撥水処
理剤を乾燥した後、加熱して縮重合させれば、耐磨耗性
が大きく、製造工程において撥水処理剤皮膜を剥離しに
くくすることができる。したがって、セラミック電子部
品を量産する場合においても、めっき液の侵入による特
性劣化を防止することができる。According to the present invention, the water repellent treatment agent is sufficiently adsorbed on the external electrode and the water repellent effect is obtained, so that the plating solution can be prevented from entering the ceramic body. Moreover, a ceramic electronic component can be easily manufactured by simply immersing the ceramic body having the external electrodes formed therein in a water repellent agent and drying. Furthermore, if the water repellent treatment agent is dried and then subjected to polycondensation by heating, the abrasion resistance is large and the water repellent treatment agent film can be made difficult to peel off in the manufacturing process. Therefore, even when mass-producing ceramic electronic components, it is possible to prevent characteristic deterioration due to penetration of the plating solution.
【図１】この発明の製造方法が適用されるセラミック電
子部品の一例を示す斜視図である。FIG. 1 is a perspective view showing an example of a ceramic electronic component to which a manufacturing method of the present invention is applied.
【図２】図１に示すセラミック電子部品の断面図であ
る。FIG. 2 is a cross-sectional view of the ceramic electronic component shown in FIG.
１０ セラミック電子部品 １２ セラミック素体 １４ａ，１４ｂ 端子電極 １６ａ，１６ｂ 外部電極 １８ａ，１８ｂ めっき皮膜 10 Ceramic electronic components 12 Ceramic body 14a, 14b terminal electrodes 16a, 16b External electrodes 18a, 18b plating film
フロントページの続き (56)参考文献 特開2002−33237（ＪＰ，Ａ) 特開2001−102247（ＪＰ，Ａ) 特開 平10−214741（ＪＰ，Ａ) 特開 平10−212598（ＪＰ，Ａ) 特開 平９−263950（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01G 4/00 - 13/06 Continuation of front page (56) Reference JP-A-2002-33237 (JP, A) JP-A-2001-102247 (JP, A) JP-A-10-214741 (JP, A) JP-A-10-212598 (JP, A) ) JP-A-9-263950 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01G 4 / 00-13 / 06
Claims (6)
の端面に形成される外部電極と、前記外部電極上に形成
されるめっき皮膜とを含むセラミック電子部品の製造方
法であって、 撥水処理剤によって前記セラミック素体に形成された前
記外部電極に撥水処理を施すことによりめっき液侵入防
止皮膜を形成する工程、および前記外部電極上にめっき
処理を施す工程を含み、 前記撥水処理剤は、Ｒａ−（ＣＨ2 ）−Ｓｉ−（Ｏ−Ｒ
ｂ）3 で表される式において、Ｒａが疎水性を有する官
能基であり、Ｒｂに相当する官能基の少なくとも１つを
加水分解することによって水酸基に置換したことを特徴
とする、セラミック電子部品の製造方法。1. A method of manufacturing a ceramic electronic component, comprising: a ceramic body; an external electrode formed on an end face of the ceramic body; and a plating film formed on the external electrode. A water-repellent treatment is applied to the external electrode formed on the ceramic element body with an agent to form a plating solution intrusion prevention film, and a plating treatment is applied to the external electrode. is, Ra- (CH 2) -Si- ( O-R
b) In the formula represented by 3 , Ra is a functional group having hydrophobicity, and at least one of the functional groups corresponding to Rb is hydrolyzed to be substituted with a hydroxyl group, which is a ceramic electronic component. Manufacturing method.
際、前記水酸基に置換した基が、加水分解前の基に対し
て２〜８０％含有される前記撥水処理剤が用いられる、
請求項１に記載のセラミック電子部品の製造方法。2. The water repellent treatment agent, wherein when the water repellent treatment is applied to the ceramic body, the hydroxyl group-substituted group is contained in an amount of 2 to 80% based on the group before hydrolysis.
The method for manufacturing the ceramic electronic component according to claim 1.
程の後に、加熱による前記撥水処理剤の縮重合により前
記外部電極と前記撥水処理剤とを共有結合させる工程を
含む、請求項１または請求項２に記載のセラミック電子
部品の製造方法。3. The method according to claim 1, further comprising a step of covalently bonding the external electrode and the water repellent agent by polycondensation of the water repellent agent by heating after the step of forming the plating solution intrusion preventing film. Alternatively, the method for manufacturing the ceramic electronic component according to claim 2.
部電極とからなる積層セラミック素体であることを特徴
とする、請求項１ないし請求項３のいずれかに記載のセ
ラミック電子部品の製造方法。4. The method of manufacturing a ceramic electronic component according to claim 1, wherein the ceramic body is a laminated ceramic body composed of ceramics and internal electrodes.
し、焼き付けたものであることを特徴とする、請求項１
ないし請求項４のいずれかに記載のセラミック電子部品
の製造方法。5. The external electrode is formed by applying an electrode paste and baking it.
5. A method of manufacturing a ceramic electronic component according to claim 4.
載のセラミック電子部品の製造方法で製造された、セラ
ミック電子部品。6. A ceramic electronic component manufactured by the method for manufacturing a ceramic electronic component according to any one of claims 1 to 5.
Priority Applications (5)
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|---|---|---|---|
| JP2001086616A JP3444291B2 (en) | 2001-03-26 | 2001-03-26 | Ceramic electronic component and method of manufacturing the same |
| CNB021183112A CN1238873C (en) | 2001-03-26 | 2002-03-25 | Ceramic electronic parts and its making method |
| GB0207150A GB2375546B (en) | 2001-03-26 | 2002-03-26 | Ceramic electronic part and method of producing the same |
| US10/107,099 US7005192B2 (en) | 2001-03-26 | 2002-03-26 | Ceramic electronic component and method of producing the same |
| KR10-2002-0016395A KR100432182B1 (en) | 2001-03-26 | 2002-03-26 | Ceramic electronic part and method of producing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001086616A JP3444291B2 (en) | 2001-03-26 | 2001-03-26 | Ceramic electronic component and method of manufacturing the same |
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|---|---|
| JP2002289465A JP2002289465A (en) | 2002-10-04 |
| JP3444291B2 true JP3444291B2 (en) | 2003-09-08 |
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ID=18941967
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|---|---|---|---|
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| Country | Link |
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| JP (1) | JP3444291B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9704649B2 (en) | 2010-05-19 | 2017-07-11 | Murata Manufacturing Co., Ltd. | Method for producing ceramic electronic component |
| US11594374B2 (en) | 2020-12-31 | 2023-02-28 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US11705283B2 (en) | 2020-12-31 | 2023-07-18 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US11901131B2 (en) | 2020-12-31 | 2024-02-13 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component including external electrodes having improved reliability |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007119281A1 (en) * | 2006-03-15 | 2007-10-25 | Murata Manufacturing Co., Ltd. | Laminated electronic component and method for manufacturing same |
| JP4775082B2 (en) * | 2006-04-05 | 2011-09-21 | 株式会社村田製作所 | Electronic components |
| CN102751093B (en) | 2008-12-26 | 2015-07-08 | 株式会社村田制作所 | Method for manufacturing ceramic electronic component and ceramic electronic component |
| JP5439944B2 (en) | 2009-05-18 | 2014-03-12 | 株式会社村田製作所 | Multilayer electronic component and manufacturing method thereof |
| JP5439954B2 (en) * | 2009-06-01 | 2014-03-12 | 株式会社村田製作所 | Multilayer electronic component and manufacturing method thereof |
| JP5459487B2 (en) * | 2010-02-05 | 2014-04-02 | 株式会社村田製作所 | Multilayer electronic component and manufacturing method thereof |
| JP6155738B2 (en) * | 2013-03-22 | 2017-07-05 | セイコーエプソン株式会社 | Channel unit, liquid ejecting head, liquid ejecting apparatus, and method for manufacturing channel unit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9704649B2 (en) | 2010-05-19 | 2017-07-11 | Murata Manufacturing Co., Ltd. | Method for producing ceramic electronic component |
| US11594374B2 (en) | 2020-12-31 | 2023-02-28 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US11705283B2 (en) | 2020-12-31 | 2023-07-18 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component |
| US11901131B2 (en) | 2020-12-31 | 2024-02-13 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component including external electrodes having improved reliability |
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|---|---|
| JP2002289465A (en) | 2002-10-04 |
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