JP3432983B2 - Quartz crystal resonator and its manufacturing method - Google Patents
Quartz crystal resonator and its manufacturing methodInfo
- Publication number
- JP3432983B2 JP3432983B2 JP33578695A JP33578695A JP3432983B2 JP 3432983 B2 JP3432983 B2 JP 3432983B2 JP 33578695 A JP33578695 A JP 33578695A JP 33578695 A JP33578695 A JP 33578695A JP 3432983 B2 JP3432983 B2 JP 3432983B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- crystal
- etching
- plate
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、エッチング加工によっ
て外形形成する水晶振動子の製造方法とCrの拡散を防
止した水晶振動子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a crystal unit whose outer shape is formed by etching and a crystal unit in which the diffusion of Cr is prevented.
【0002】[0002]
【従来の技術】従来から、水晶板をエッチング加工によ
って外形成形する水晶板のエッチング加工時に使用する
プロテクト膜の構造は、水晶の表面の残すべき部分にC
r(クロム)層を蒸着し、その上にAu(金)層を蒸着
して、エッチング液(フッ酸混液)に浸して,フォトリ
ソ加工によりプロテクト膜の付けて無い部分をエッチン
グして除去する方法が採られていた。また、水晶振動子
の励振電極としてCr層の上にAu層を蒸着する電極が
用いられてきた。2. Description of the Related Art Conventionally, the structure of a protect film used for etching a quartz plate, which is an outer shape of a quartz plate by etching, has a C on the surface of the quartz to be left.
A method of vapor-depositing an r (chrome) layer, vapor-depositing an Au (gold) layer thereon, immersing it in an etching solution (hydrofluoric acid mixed solution), and etching and removing a portion without a protective film by photolithography. Was taken. Further, an electrode for depositing an Au layer on a Cr layer has been used as an excitation electrode of a crystal unit.
【0003】[0003]
【発明が解決しようとする課題】しかし、加工しようと
する水晶板の厚みが厚くなると、エッチング時間が長く
なり、プロテクト膜がその時間に耐え切れなくなり、プ
ロテクト膜が破損するとプロテクト膜が破損した部分の
水晶、即ち水晶板の必要な部分がエッチングされてしま
う。また、励振電極でCr層、Au層だけでは、Crが
Au層の中に拡散されてしまう。その結果、弾性定数が
見かけ上変わり、周波数が時間とともに変化してしま
う。However, when the thickness of the crystal plate to be processed becomes thick, the etching time becomes long, the protect film cannot withstand the time, and when the protect film is damaged, the part where the protect film is damaged is damaged. The crystal, that is, the necessary portion of the crystal plate, is etched. Moreover, Cr is diffused into the Au layer only with the Cr layer and the Au layer in the excitation electrode. As a result, the elastic constant apparently changes, and the frequency changes with time.
【0004】図3に従来例を示す。水晶板1上のプロテ
クト膜の厚みを厚くすればよいのであるが、前記のプロ
テクト膜のCr層2下地の上にAu層3を蒸着するが、
そのAu層を厚く蒸着すると、Auの粒子が巨大化する
とともに、粒子間に隙間が発生して蒸着面が緻密でなく
なり、そのためにAu層のプロテクト膜を厚くしてもプ
ロテクト効果が向上しなくなる。従ってプロテクト膜が
破損する様な事態の場合には、エッチングを中止してプ
ロテクト膜を付け直してエッチングを続行しなければな
らないと言う手間の掛かる作業が増えるという課題があ
った。FIG. 3 shows a conventional example. It suffices to increase the thickness of the protect film on the crystal plate 1. The Au layer 3 is vapor-deposited on the underlayer of the Cr layer 2 of the protect film.
When the Au layer is vapor-deposited thickly, the Au particles become huge and gaps are generated between the particles to make the vapor deposition surface less dense. Therefore, even if the protective film of the Au layer is thickened, the protective effect cannot be improved. . Therefore, in a case where the protect film is damaged, there is a problem that the time-consuming work such as having to stop the etching, reattach the protect film, and continue the etching increases.
【0005】[0005]
【課題を解決する手段】この課題を解決するために、プ
ロテクト膜の厚みに比例してプロテクト効果が向上する
様にプロテクト膜が、緻密な状態を維持しつつ厚みを厚
くできる様に、前記のプロテクト膜のCr層下地の上に
Au層を蒸着し、そのAu層の上にCr層を蒸着してそ
の上に更にAu層を蒸着する。この様に、Cr層をはさ
みながらAu層を重ねることで課題を解決した。また、
励振電極においてCr層の上にAu層、さらにNi層又
はNiCr層にAu層を蒸着し、CrのAuへの拡散を
防止できた。In order to solve this problem, in order to improve the protection effect in proportion to the thickness of the protection film, the protection film can be thickened while maintaining a dense state. An Au layer is vapor-deposited on the underlayer of the Cr layer of the protect film, a Cr layer is vapor-deposited on the Au layer, and an Au layer is further vapor-deposited thereon. Thus, the problem was solved by stacking the Au layers while sandwiching the Cr layer. Also,
It was possible to prevent the diffusion of Cr into Au by vapor-depositing an Au layer on the Cr layer and further depositing an Au layer on the Ni layer or the NiCr layer in the excitation electrode.
【0006】[0006]
【背景及び作用】一般的に、厚みの薄い水晶板(例えば
t=0.2mm程度までの板)をエッチング加工する場
合は、Cr層とAu層の蒸着で作られたプロテクト膜で
充分対応できる。しかし、近年厚みの厚い水晶板(例え
ばt=0.2〜0.6mm程度の板)のエッチング加工
の必要性が増大したためと、更にエッチング面をできる
だけ水晶板の面から垂直にエッチングすると言う必要性
が高まって来た。[Background and Action] Generally, when a thin quartz plate (for example, a plate up to about t = 0.2 mm) is etched, a protective film formed by vapor deposition of a Cr layer and an Au layer is sufficient. . However, in recent years, the necessity of etching a thick crystal plate (for example, a plate having a thickness of about t = 0.2 to 0.6 mm) has increased, and it is necessary to say that the etching surface is etched as vertically as possible from the surface of the crystal plate. The nature has increased.
【0007】このエッチング面を水晶板の面に垂直にす
ると言うことは、水晶が異方性の結晶であるために、水
晶の軸方向によってエッチングレートが異なり、例えば
Z板(Z軸に水直な面の水晶板)では、X軸上にあるエ
ッチング断面は水晶板の両面からエッチングされるた
め、板の厚み方向の中央が凸になる傾向がある。この板
の厚み方向の中央の凸は水晶の軸方向と関連があり、−
X方向にある断面は板の厚み方向の中央の凸は小さく、
+X方向にある断面は板の厚み方向の中央の凸は大き
い。The fact that the etching surface is perpendicular to the surface of the crystal plate means that the crystal is an anisotropic crystal and therefore the etching rate differs depending on the axial direction of the crystal. In the case of a quartz plate having a flat surface), the etching cross section on the X axis is etched from both sides of the quartz plate, so that the center in the thickness direction of the plate tends to be convex. The central projection in the thickness direction of this plate is related to the axial direction of the crystal, −
The cross section in the X direction has a small convex in the center of the plate in the thickness direction,
In the cross section in the + X direction, the central projection in the thickness direction of the plate is large.
【0008】水晶板の厚み方向の中央の凸は、アームの
アンバランス原因になる等の理由で水晶振動子の特性を
悪化させる要因になる。故に、水晶板の厚み方向の中央
の凸は、無くしたい。The central protrusion in the thickness direction of the crystal plate becomes a factor of deteriorating the characteristics of the crystal unit because of the cause of imbalance of the arm. Therefore, we want to eliminate the central protrusion in the thickness direction of the crystal plate.
【0009】一般的に、この水晶板の厚み方向の中央の
凸を小さくするには、エッチング時間を長くする(単に
水晶板が抜けた段階よりも、もっとエッチングを深く行
う)ことに依って実現できる。水晶板の厚み方向の中央
の凸の一番大きい面の凸が、満足できる程度まで小さく
なるか、或いは無くなるまでエッチングを行うため、当
然エッチング時間が長くなる。In general, in order to reduce the central projection of the crystal plate in the thickness direction, it is realized by prolonging the etching time (etching more deeply than just removing the crystal plate). it can. Etching is performed until the projection of the largest central projection in the thickness direction of the crystal plate is reduced to a satisfactory degree or disappeared, so that the etching time naturally increases.
【0010】エッチングに長時間耐えられるプロテクト
膜を必要とする背景である。因に、元来エッチング液に
侵されないはずのAu層を使用したプロテクト膜が侵さ
れる理由は、Crの拡散に起因している。Crは、その
拡散性の良さで他の物質(例えば水晶、Au等)に拡散
する。この拡散故に密着性が良く、水晶とAu層の接着
のために使用される。しかし、CrがAuの中に拡散し
てAu層の表面迄拡散が進むと、エッチングのときに、
このCrの部分がエッチング液(例えばフッ酸混液)に
侵されプロテクト膜に孔が開き、その孔の部分の水晶板
が侵されることになる。なお、外形形成後、プロテクト
膜を除去し、水晶片上に励振電極を形成する。励振電極
においては、CrのAuへの拡散の進行により見かけ上
の弾性定数の変動を生じ、周波数が除々に変化してしま
う。This is the background to the need for a protective film that can withstand etching for a long time. Incidentally, the reason why the protect film using the Au layer, which should not be originally attacked by the etching solution, is attacked is due to the diffusion of Cr. Due to its good diffusibility, Cr diffuses into other substances (eg, quartz, Au, etc.). Due to this diffusion, the adhesiveness is good, and it is used for bonding the quartz layer and the Au layer. However, if Cr diffuses into Au and spreads to the surface of the Au layer, during etching,
The Cr portion is attacked by an etching solution (for example, a hydrofluoric acid mixed solution) to open a hole in the protect film, and the quartz plate in the hole portion is attacked. After the outer shape is formed, the protect film is removed and the excitation electrode is formed on the crystal piece. In the excitation electrode, the apparent elastic constant fluctuates due to the progress of diffusion of Cr into Au, and the frequency gradually changes.
【0011】[0011]
(請求項1に関する実施例)図1に、本発明の請求項1
に関する詳細な実施例を示す断面図を示す。水晶板1の
上にCr層2を蒸着しその上にAu層3を蒸着する。そ
の上にCr層4を蒸着しその上にAu層5蒸着する。こ
れでCr層とAu層の膜を2組蒸着したことになる。そ
の上にCr層6を蒸着しその上にAu層7を蒸着する。
これでCr層とAu層の膜を3組蒸着したことになる。(Embodiment related to claim 1) FIG.
FIG. 3 is a sectional view showing a detailed example regarding the above. The Cr layer 2 is vapor-deposited on the crystal plate 1, and the Au layer 3 is vapor-deposited thereon. A Cr layer 4 is vapor-deposited thereon, and an Au layer 5 is vapor-deposited thereon. This means that two sets of Cr layer and Au layer films were vapor deposited. A Cr layer 6 is vapor-deposited thereon, and an Au layer 7 is vapor-deposited thereon.
This means that three sets of Cr layer and Au layer films were deposited.
【0012】Cr層は50±10%nm、Au層は20
0±10%nmとして、エッチング液(一例、フッ酸系
エッチング剤)とした場合のプロテクト膜の蒸着の層数
とプロテクト時間の関係の一例は、次に示す通りであ
る。The Cr layer is 50 ± 10% nm, and the Au layer is 20.
An example of the relationship between the number of vapor deposition layers of the protect film and the protect time when the etchant is 0 ± 10% nm and is used as an etching solution (for example, a hydrofluoric acid-based etchant) is as follows.
【0013】 蒸 着 組 数 プロテクト時間 1 組 → 60分 2 組 → 180分 3 組 → 300〜360分[0013] Number of vapor deposition groups Protect time 1 group → 60 minutes 2 pairs → 180 minutes 3 groups → 300 to 360 minutes
【0014】Cr層とAu層を重ねると、プロテクト膜
のプロテクト時間が前記の様に、プロテクト層を増す程
長くなっているが、単に1組の2倍、3倍になるのでは
なく、1組の約3倍、約6倍と増加している。When the Cr layer and the Au layer are overlapped, the protect time of the protect film becomes longer as the protect layer increases, as described above. The number is about 3 times and about 6 times that of the set.
【0015】(請求項2に関する実施例)図2に、本発
明の請求項2に関する詳細な実施例の断面図を示す。水
晶板1の上にCr層2を蒸着しその上にAu層3を蒸着
する。その上にNi又はNiCr層8を蒸着しその上に
Au層9を蒸着する。これでCrがAu層の膜の表面迄
拡散してくるのをNi層で防止している。(Embodiment relating to Claim 2) FIG. 2 is a sectional view showing a detailed embodiment relating to Claim 2 of the present invention. The Cr layer 2 is vapor-deposited on the crystal plate 1, and the Au layer 3 is vapor-deposited thereon. A Ni or NiCr layer 8 is vapor-deposited thereon, and an Au layer 9 is vapor-deposited thereon. This prevents the Ni layer from spreading Cr to the surface of the Au layer film.
【0016】Cr層50±10%nm、Au層190±
10%nm、Ni又はNiCr層30±10%nm、A
u層は200±10%nmとして、エッチング液(一
例、フッ酸系エッチング剤)とした場合のプロテクト膜
のプロテクト時間の一例は、約400分である。Cr layer 50 ± 10% nm, Au layer 190 ±
10% nm, Ni or NiCr layer 30 ± 10% nm, A
When the u layer is 200 ± 10% nm and an etching solution (for example, a hydrofluoric acid-based etching agent) is used, an example of the protect time of the protect film is about 400 minutes.
【0017】(請求項3に関する実施例)図2に本発明
の請求項3に関する実施例の断面図を示す。励振電極
は、前述請求項2と同様の構造である。水晶板上のCr
層2とAu層3との間では拡散が生じるが、Au層3の
上にNi又はNi又はNiCr層8を、さらにAu層9
を蒸着することによって、Au層3の中に拡散したCr
はNi又はNiCr層8に阻まれ、それ以上拡散できな
くなる。Ni又はNiCr層8上のAu層9はNi又は
NiCr層8の酸化防止のためにある。(Embodiment relating to claim 3) FIG. 2 shows a sectional view of an embodiment relating to claim 3 of the present invention. The excitation electrode has the same structure as in claim 2 described above. Cr on the crystal plate
Although diffusion occurs between the layer 2 and the Au layer 3, a Ni or Ni or NiCr layer 8 is further formed on the Au layer 3, and an Au layer 9 is further formed.
Of Cr diffused in the Au layer 3 by vapor deposition of
Is blocked by the Ni or NiCr layer 8 and can no longer diffuse. The Au layer 9 on the Ni or NiCr layer 8 is for preventing the Ni or NiCr layer 8 from being oxidized.
【0018】[0018]
【発明の効果】本発明により、エッチング液に対してプ
ロテクト時間の長いプロテクト膜が実現できたので、一
回のプロテクト膜の形成で厚みの厚い水晶板のエッチン
グ加工が可能になっただけでなく、水晶表面に垂直なエ
ッチング面を容易に作れる様になり、従って外形バラン
ス精度の良い水晶板の加工が実現できる等の効果があり
水晶振動子の高性能化及び高信頼性化、生産性の向上に
よるコストダウンが実現できた。また、励振電極にC
r、AuさらにNi又はNiCr、Auを蒸着すること
によって、CrのAuへの拡散が減少し、水晶振動子の
経時変化が極めて少なくなった。According to the present invention, since a protect film having a long protect time against an etching solution can be realized, not only is it possible to etch a thick crystal plate by forming the protect film once. , The etching surface perpendicular to the crystal surface can be easily made, and therefore, the effect of being able to realize the processing of the crystal plate with a good outer shape balance accuracy can be achieved. We were able to reduce costs through improvements. Also, C is used as the excitation electrode.
By vapor-depositing r, Au, Ni or NiCr, Au, the diffusion of Cr into Au was reduced, and the change with time of the crystal unit was extremely reduced.
【図1】本発明のプロテクト膜の構成の実施例を示す断
面図である。FIG. 1 is a cross-sectional view showing an embodiment of the structure of a protect film of the present invention.
【図2】本発明のプロテクト膜及び励振電極の構成の実
施例を示す断面図である。FIG. 2 is a cross-sectional view showing an example of a structure of a protect film and an excitation electrode of the present invention.
【図3】従来技術のプロテクト膜の構成、及び励振電極
膜の構造の実施例を示す断面図である。FIG. 3 is a cross-sectional view showing an example of a structure of a protect film and a structure of an excitation electrode film of a conventional technique.
1 水晶板 2、4、6 Cr層 8 Ni又はNiCr層 3、5、7、9 Au層 1 Crystal plate 2, 4, 6 Cr layer 8 Ni or NiCr layer 3, 5, 7, 9 Au layer
フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H03H 9/00 - 9/24 H03H 3/02 Front page continued (58) Fields surveyed (Int.Cl. 7 , DB name) H03H 9/00-9/24 H03H 3/02
Claims (3)
水晶振動子の製造方法において、水晶板の上にCr層を
形成し、該Cr層の上にAu層を形成し、該Au層の上
に、Cr層とAu層からなる積層膜を、層材が異なるも
のが相接合するよう複数段重ねた構成のプロテクト膜を
使用することを特徴とする水晶振動子の製造方法。 1. A method for manufacturing a crystal resonator, wherein an outer shape is formed by etching , wherein a Cr layer is formed on a crystal plate.
Forming, forming an Au layer on the Cr layer, and forming on the Au layer
In addition, a layered film consisting of a Cr layer and an Au layer,
A protective film with multiple layers stacked so that
A method for manufacturing a crystal unit, which is characterized by being used.
水晶振動子の製造方法において、水晶板の上にCr層を
形成し、該Cr層の上にAu層を形成し、該Au層の上
にNi又はNiCr層を形成し、該Ni又はNiCr層
の上にAu層を形成した構成のプロテクト膜を使用する
ことを特徴とする水晶振動子の製造方法。 2. A method of manufacturing a crystal unit, wherein an outer shape is formed by etching , wherein a Cr layer is provided on a crystal plate.
Forming, forming an Au layer on the Cr layer, and forming on the Au layer
Ni or NiCr layer is formed on the
Use a protect film with a Au layer formed on top
A method of manufacturing a crystal unit, comprising:
において、水晶板の上に形成する励振電極の層構造を、
まず水晶板の上に形成する層をCr層とし、該Cr層の
上の層をAu層とし、該Au層の上の層をNi層又はN
iCr層とし、該Ni層又はNiCr層の上の層をAu
層とした4層構造としたことを特徴とする水晶振動子。 3. A crystal resonator having an excitation electrode formed on a crystal plate, wherein a layer structure of the excitation electrode formed on the crystal plate is
First, the layer formed on the quartz plate is a Cr layer, and the Cr layer is
The upper layer is an Au layer, and the layer above the Au layer is a Ni layer or an N layer.
The iCr layer is used, and the layer above the Ni layer or the NiCr layer is Au.
A crystal unit having a four-layer structure including layers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33578695A JP3432983B2 (en) | 1995-11-30 | 1995-11-30 | Quartz crystal resonator and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33578695A JP3432983B2 (en) | 1995-11-30 | 1995-11-30 | Quartz crystal resonator and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09153763A JPH09153763A (en) | 1997-06-10 |
JP3432983B2 true JP3432983B2 (en) | 2003-08-04 |
Family
ID=18292432
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JP33578695A Expired - Fee Related JP3432983B2 (en) | 1995-11-30 | 1995-11-30 | Quartz crystal resonator and its manufacturing method |
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JP4451219B2 (en) * | 2004-06-03 | 2010-04-14 | 日本電波工業株式会社 | Crystal oscillator |
JP2006262456A (en) * | 2005-02-21 | 2006-09-28 | Seiko Instruments Inc | Piezoelectric oscillating piece and its manufacturing method, piezoelectric vibrator, oscillator, electronic instrument and radio wave time-piece |
JP4707021B2 (en) * | 2005-08-22 | 2011-06-22 | セイコーエプソン株式会社 | Piezoelectric device |
JP2012054893A (en) * | 2010-09-03 | 2012-03-15 | Nippon Dempa Kogyo Co Ltd | Tuning fork type crystal vibrating piece and crystal device |
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JPH09153763A (en) | 1997-06-10 |
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JPS60167326A (en) | Manufacture of semiconductor device | |
JPS5976467A (en) | Semiconductor device |
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