JP3426972B2 - Method and apparatus for cleaning inside Si-based product manufacturing apparatus - Google Patents
Method and apparatus for cleaning inside Si-based product manufacturing apparatusInfo
- Publication number
- JP3426972B2 JP3426972B2 JP19126198A JP19126198A JP3426972B2 JP 3426972 B2 JP3426972 B2 JP 3426972B2 JP 19126198 A JP19126198 A JP 19126198A JP 19126198 A JP19126198 A JP 19126198A JP 3426972 B2 JP3426972 B2 JP 3426972B2
- Authority
- JP
- Japan
- Prior art keywords
- based product
- forming container
- frequency power
- product forming
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＳｉ系生成物製造装
置内部の洗浄方法及び装置に関し、プラズマＣＶＤ（ch
emical vapor deposition)装置等真空中でＳｉ系生成物
を形成する装置のＳｉ系生成物形成容器内の不要なＳｉ
系生成物の除去に適用して有用なものである。また、本
発明は上記プラズマＣＶＤ装置等真空中でＳｉ系生成物
を形成する装置以外の装置でも、Ｓｉ系生成物を形成す
る装置のＳｉ系生成物形成容器内の不要なＳｉ系生成物
の除去にも適用可能である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for cleaning the inside of a Si-based product manufacturing apparatus, which relates to plasma CVD
Unnecessary Si in a Si-based product forming container of a device for forming a Si-based product in a vacuum such as a device
It is useful when applied to the removal of system products. The present invention is also applicable to devices other than the device for forming Si-based products in a vacuum, such as the plasma CVD device described above, for removing unnecessary Si-based products in the Si-based product forming container of the device for forming Si-based products. It is also applicable to removal.
【０００２】[0002]
【従来の技術】図６は従来のＳｉ系生成物製造装置内部
の洗浄装置の構成図である。2. Description of the Related Art FIG. 6 is a block diagram of a conventional cleaning apparatus inside a Si-based product manufacturing apparatus.
【０００３】図６に示すＳｉ系生成物製造装置はプラズ
マＣＶＤ装置等の装置であって、Ｓｉ系生成物形成容器
１に付属して材料ガス供給装置（図示せず）、材料ガス
導入部１０、真空排気ポンプ３、高周波電源９等が設置
されており、材料ガス供給装置から供給される材料ガス
（ＳｉＨ4 ガス等）を材料ガス導入部１０からＳｉ系生
成物形成容器１内に導入し、真空排気ポンプ３により真
空排気配管４及びポンプ後流排気配管５を通じてＳｉ系
生成物形成容器１内から材料ガスを排気してＳｉ系生成
物形成容器１内を所定の圧力にすると共に、高周波電源
９から電極８を介してＳｉ系生成物形成容器１内に高周
波電力を供給して材料ガスを励起しプラズマ状態とする
ことにより、Ｓｉ系生成物形成容器１内の被対象物にＳ
ｉ系生成物を付着させ又は独立にＳｉ系生成物を形成す
るように構成されている。The Si-based product manufacturing apparatus shown in FIG. 6 is an apparatus such as a plasma CVD apparatus, which is attached to the Si-based product forming container 1 and is equipped with a material gas supply device (not shown) and a material gas introduction unit 10. A vacuum pump 3, a high frequency power source 9 and the like are installed, and the material gas (SiH 4 gas or the like) supplied from the material gas supply device is introduced into the Si-based product forming container 1 from the material gas introduction unit 10. The material gas is exhausted from the inside of the Si-based product forming container 1 by the vacuum exhaust pump 3 through the vacuum exhaust pipe 4 and the pump downstream exhaust pipe 5 to make the inside of the Si-based product forming container 1 a predetermined pressure, By supplying high-frequency power from the power source 9 through the electrode 8 into the Si-based product forming container 1 to excite the material gas into a plasma state, the target object in the Si-based product forming container 1 is subjected to S
It is configured to deposit an i-based product or independently form a Si-based product.
【０００４】なお、図６中の６は電力導入端子、７は電
力導入端子６より導入されて高周波電源９と電極８とを
電気的に接続する電力導入ケーブルである。Reference numeral 6 in FIG. 6 denotes a power introduction terminal, and 7 denotes a power introduction cable introduced from the power introduction terminal 6 to electrically connect the high frequency power source 9 and the electrode 8.
【０００５】そして、従来のＳｉ系生成物製造装置内部
の洗浄装置は、Ｓｉ系生成物形成容器１に付属して設置
されたフッ素系ガス供給装置（図示せず）から供給され
るフッ素系ガスを、Ｓｉ系生成物形成容器１に付属して
設置されたフッ素系ガス導入部１６からＳｉ系生成物形
成容器１内に導入し、真空排気ポンプ３で排気してＳｉ
系生成物形成容器１内の圧力を適当な圧力になるまで減
圧すると共に、高周波電源９から電極８を介してＳｉ系
生成物形成容器１内に高周波電力を供給して前記フッ素
系ガスを励起しプラズマ状態とすることにより、このプ
ラズマ中のフッ素ラジカルと、Ｓｉ系生成物形成容器１
内に不要に付着したＳｉ系生成物のＳｉとを化学反応さ
せてＳｉＦ4 の気体状態とし、これを真空排気ポンプ３
によりＳｉ系生成物形成容器１の外部へと排気して、Ｓ
ｉ系生成物形成容器１内の洗浄（不要なＳｉ系生成物の
除去）を行うように構成されている。The conventional cleaning device for the inside of the Si-based product manufacturing apparatus uses a fluorine-based gas supplied from a fluorine-based gas supply device (not shown) installed as an accessory to the Si-based product forming container 1. Is introduced into the Si-based product forming container 1 from the fluorine-based gas introduction part 16 installed attached to the Si-based product forming container 1 and evacuated by the vacuum exhaust pump 3 to produce Si.
The pressure in the system product forming container 1 is reduced to an appropriate pressure, and high frequency power is supplied from the high frequency power source 9 into the Si system product forming container 1 through the electrode 8 to excite the fluorine-based gas. Then, the fluorine radicals in the plasma and the Si-based product forming container 1 are brought into a plasma state.
The Si-based product, which is unnecessarily adhered to the inside, is chemically reacted with Si to form SiF 4 in a gaseous state, which is then evacuated by the vacuum pump 3
To the outside of the Si-based product forming container 1 by
The inside of the i-based product forming container 1 is cleaned (removal of unnecessary Si-based products).
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記よ
うなフッ素系ガスとの化学反応を利用した従来のＳｉ系
生成物製造装置内部の洗浄装置では、以下のような問題
点を有している。However, the conventional cleaning apparatus inside the Si-based product manufacturing apparatus utilizing the chemical reaction with the fluorine-based gas as described above has the following problems.
【０００７】 フッ素系ガスは支燃性ガスであるた
め、このフッ素系ガスと、可燃性ガスであるＳｉ系生成
物材料ガスの一つであるＳｉＨ4 ガスとが混合すると爆
発を起こす虞がある。そこで、フッ素系ガスとＳｉＨ4
ガスとの混合爆発を避ける対策として、Ｓｉ系生成物形
成時にＳｉＨ4 ガスを導入する材料ガス導入部１０と、
不要なＳｉ系生成物除去時にフッ素系ガスを導入するフ
ッ素系ガス導入部１６とをそれぞれ個別に２系列設ける
と共に真空排気ポンプ３の後流側の排気配管５のガス排
気部もＳｉＨ4 ガス用とフッ素系ガス用の２系列を準備
し、且つ、これら２系列が同時に接続されてＳｉＨ4 ガ
スとフッ素系ガスとが混合されることがないように弁２
５，２６によって制御する必要がある。このため、装置
全体のコストが上昇してしまう。Since the fluorine-based gas is a combustion-supporting gas, if this fluorine-based gas and SiH 4 gas, which is one of the Si-based product material gases that are combustible gases, are mixed, an explosion may occur. . Therefore, fluorine gas and SiH 4
As a measure for avoiding a mixed explosion with gas, a material gas introduction part 10 for introducing SiH 4 gas at the time of forming a Si-based product,
Fluorine-based gas introduction parts 16 for introducing fluorine-based gas at the time of removing unnecessary Si-based products are individually provided in two series, and the gas exhaust part of the exhaust pipe 5 on the downstream side of the vacuum exhaust pump 3 is also for SiH 4 gas. And 2 series for the fluorine-based gas are prepared, and the valve 2 is provided so that these 2 series are not simultaneously connected and the SiH 4 gas and the fluorine-based gas are not mixed.
5,26 must be controlled. Therefore, the cost of the entire device increases.
【０００８】 フッ素ラジカルは反応性が高いため、
Ａｌ、Ｎｉ、アルミナ系セラミック以外の材料では一般
のプラズマＣＶＤ装置が運用される２５０℃以上の温度
で腐食を起こしてしまう。このためプラズマＣＶＤ装置
の真空容器等を構成する高温部の材料には上記のＡｌ、
Ｎｉ、アルミナ系セラミックを主材料として用いる必要
があるが、これらの材料は高価であり、このことも装置
全体のコストを上昇させる要因となる。Since fluorine radicals are highly reactive,
Materials other than Al, Ni, and alumina-based ceramics cause corrosion at a temperature of 250 ° C. or higher at which a general plasma CVD apparatus is operated. For this reason, the above-mentioned Al is used as the material of the high temperature part that constitutes the vacuum container of the plasma CVD apparatus.
Although it is necessary to use Ni and alumina-based ceramics as main materials, these materials are expensive, which also causes a rise in the cost of the entire apparatus.
【０００９】 不要なＳｉ系生成物除去用のフッ素系
ガスはコストが高い。このため装置全体のランニングコ
ストも上昇してしまう。Fluorine-based gas for removing unnecessary Si-based products is expensive. For this reason, the running cost of the entire device also increases.
【００１０】従って本発明は上記従来技術に鑑み、排気
配管等を２系列にする必要がなく、また、Ａｌ、Ｎｉ、
アルミナ系セラミック以外の材料を用いることができて
装置全体のコストを低減させることができ、更には、装
置全体のランニングコストも低減させることができるＳ
ｉ系生成物製造装置内部の洗浄方法及び装置を提供する
ことを課題とする。Therefore, in the present invention, in view of the above-mentioned prior art, it is not necessary to form exhaust pipes in two lines, and Al, Ni,
It is possible to use materials other than alumina-based ceramics and reduce the overall cost of the device, and also reduce the running cost of the entire device.
An object of the present invention is to provide a cleaning method and an apparatus for cleaning the inside of an i-based product manufacturing apparatus.
【００１１】[0011]
【課題を解決するための手段】上記課題を解決する第１
発明のＳｉ系生成物製造装置内部の洗浄方法は、材料ガ
ス供給装置から供給される材料ガスを材料ガス導入部か
らＳｉ系生成物形成容器内に導入し、真空排気ポンプに
より排気配管を通じて前記Ｓｉ系生成物形成容器内から
前記材料ガスを排気して前記Ｓｉ系生成物形成容器内を
所定の圧力にすると共に、高周波電源から電極を介して
前記Ｓｉ系生成物製造装置内に高周波電力を供給して前
記材料ガスを励起しプラズマ状態とすることにより、前
記Ｓｉ系生成物形成容器内の被対象物にＳｉ系生成物を
付着させ又は独立にＳｉ系生成物を形成するように構成
されたＳｉ系生成物製造装置の内部の洗浄方法であっ
て、前記Ｓｉ系生成物形成容器内、排気配管内又はその
他の部位内に、水素ガス供給装置から供給される水素ガ
スを水素ガス導入部から導入すると共に前記高周波電源
又はその他の高周波電源から前記電極又はその他の電極
を介して高周波電力を供給することにより、前記水素ガ
スを励起し水素プラズマ状態として、この水素プラズマ
中の水素ラジカルと、前記Ｓｉ系生成物形成容器内、排
気配管内又はその他の部位内に不要に付着したＳｉ系生
成物とを反応させ、この不要なＳｉ系生成物を分解し気
化させて前記Ｓｉ系生成物形成容器、前記排気配管又は
その他の部位の外部へと排気することにより、前記Ｓｉ
系生成物形成容器内、排気配管内又はその他の部位内を
洗浄することを特徴とする。[Means for Solving the Problems] First to solve the above problems
In the method for cleaning the inside of the Si-based product manufacturing apparatus of the present invention, the material gas supplied from the material gas supply device is introduced into the Si-based product forming container from the material gas introduction part, and the Si-based product forming container is evacuated by the vacuum exhaust pump through the exhaust pipe. The material gas is exhausted from the inside of the system product forming container to bring the inside of the Si system product forming container to a predetermined pressure, and high frequency power is supplied from the high frequency power source to the inside of the Si system product manufacturing apparatus through the electrode. Then, by exciting the material gas into a plasma state, the Si-based product is adhered to the object in the Si-based product forming container, or the Si-based product is independently formed. A method of cleaning the inside of a Si-based product manufacturing apparatus, wherein a hydrogen gas supplied from a hydrogen gas supply device is introduced into the Si-based product forming container, the exhaust pipe, or another portion. By introducing high-frequency power from the high-frequency power source or other high-frequency power source through the electrode or other electrode together with the introduction, as a hydrogen plasma state by exciting the hydrogen gas, hydrogen radicals in this hydrogen plasma, The Si-based product forming container, the exhaust pipe, or another portion is reacted with an unnecessary Si-based product, and the unnecessary Si-based product is decomposed and vaporized to form the Si-based product. By exhausting to the outside of the container, the exhaust pipe or other parts, the Si
It is characterized in that the inside of the system product forming container, the inside of the exhaust pipe, or the inside of other parts is cleaned.
【００１２】また、第２発明のＳｉ系生成物製造装置内
部の洗浄装置は、材料ガス供給装置から供給される材料
ガスを材料ガス導入部からＳｉ系生成物形成容器内に導
入し、真空排気ポンプにより排気配管を通じて前記Ｓｉ
系生成物形成容器内から前記材料ガスを排気して前記Ｓ
ｉ系生成物形成容器内を所定の圧力にすると共に、高周
波電源から電極を介して前記Ｓｉ系生成物形成容器内に
高周波電力を供給して前記材料ガスを励起しプラズマ状
態とすることにより、前記Ｓｉ系生成物形成容器内の被
対象物にＳｉ系生成物を付着させ又は独立にＳｉ系生成
物を形成するように構成されたＳｉ系生成物製造装置の
内部の洗浄装置であって、前記Ｓｉ系生成物形成容器内
に、水素ガス供給装置から供給される水素ガスを水素ガ
ス導入部から導入すると共に前記高周波電源又はその他
の高周波電源から前記電極又はその他の電極を介して高
周波電力を供給することにより、前記水素ガスを励起し
水素プラズマ状態として、この水素プラズマ中の水素ラ
ジカルと、前記Ｓｉ系生成物形成容器内に不要に付着し
たＳｉ系生成物とを反応させ、この不要なＳｉ系生成物
を分解し気化させて前記Ｓｉ系生成物形成容器の外部へ
と排気することにより、前記Ｓｉ系生成物形成容器内を
洗浄するように構成したことを特徴とする。The cleaning device inside the Si-based product manufacturing apparatus according to the second aspect of the invention introduces the material gas supplied from the material gas supply device into the Si-based product forming container from the material gas introduction section, and evacuates it. The Si is pumped through the exhaust pipe.
The material gas is exhausted from the inside of the system product forming container, and the S
By setting a predetermined pressure in the i-based product forming container and supplying high-frequency power from the high-frequency power source to the inside of the Si-based product forming container through an electrode to excite the material gas into a plasma state, A cleaning device inside a Si-based product manufacturing apparatus configured to attach a Si-based product to an object in the Si-based product forming container or independently form the Si-based product, Into the Si-based product forming container, a hydrogen gas supplied from a hydrogen gas supply device is introduced from a hydrogen gas introduction part, and high-frequency power is supplied from the high-frequency power supply or another high-frequency power supply through the electrode or another electrode. By supplying, the hydrogen gas is excited to form a hydrogen plasma state, and hydrogen radicals in the hydrogen plasma and Si-based products unnecessarily attached to the Si-based product forming container The inside of the Si-based product forming container is cleaned by reacting, decomposing and vaporizing the unnecessary Si-based product and exhausting it to the outside of the Si-based product forming container. And
【００１３】また、第３発明のＳｉ系生成物製造装置内
部の洗浄装置は、第２発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記材料ガス導入部と前記水素ガ
ス導入部とを統合したことを特徴とする。A cleaning device inside the Si-based product manufacturing apparatus according to the third aspect of the present invention is the cleaning apparatus inside the Si-based product manufacturing apparatus according to the second aspect of the present invention, in which the material gas introducing section and the hydrogen gas introducing section are provided. It is characterized by being integrated.
【００１４】また、第４発明のＳｉ系生成物製造装置内
部の洗浄装置は、第２発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記Ｓｉ系生成物形成容器内の複
数箇所に電極を配設し、不要なＳｉ系生成物を除去する
際には、これら複数の電極を介して前記Ｓｉ系生成物形
成容器内の複数箇所に高周波電力を供給するように構成
したことを特徴とする。The cleaning device inside the Si-based product manufacturing apparatus according to the fourth aspect of the present invention is the cleaning apparatus inside the Si-based product manufacturing apparatus according to the second aspect of the present invention, wherein electrodes are provided at a plurality of locations in the Si-based product forming container. And is configured to supply high-frequency power to a plurality of locations in the Si-based product forming container through the plurality of electrodes when removing unnecessary Si-based products. To do.
【００１５】また、第５発明のＳｉ系生成物製造装置内
部の洗浄装置は、第４発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記複数の電極に対してそれぞれ
個別の高周波電源から高周波電力を供給するように構成
したことを特徴とする。The cleaning device inside the Si-based product manufacturing apparatus of the fifth aspect of the invention is the cleaning apparatus inside the Si-based product manufacturing apparatus of the fourth aspect of the invention, wherein each of the plurality of electrodes is supplied from a separate high-frequency power source. It is characterized in that it is configured to supply high frequency power.
【００１６】また、第６発明のＳｉ系生成物製造装置内
部の洗浄装置は、第６発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記Ｓｉ系生成物形成容器と前記
真空ポンプとの間の排気配管内又はその他の部位内にも
電極を設け、この電極を介して前記高周波電源又はその
他の高周波電源から前記排気配管内又はその他の部位内
にも高周波電力を供給するよう構成したことを特徴とす
る。A cleaning device inside the Si-based product manufacturing apparatus according to the sixth aspect of the present invention is the cleaning apparatus inside the Si-based product manufacturing apparatus according to the sixth aspect of the present invention, in which the Si-based product forming container and the vacuum pump are provided. Electrodes are also provided in the exhaust pipe between or in other parts, and high-frequency power is also supplied from the high-frequency power source or other high-frequency power source to the inside of the exhaust pipe or other parts through the electrodes. Is characterized by.
【００１７】[0017]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づき詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
【００１８】＜実施の形態１＞図１は本発明の実施の形
態１に係るＳｉ系生成物製造装置内部の洗浄装置の構成
図である。<Embodiment 1> FIG. 1 is a block diagram of a cleaning apparatus inside a Si-based product manufacturing apparatus according to Embodiment 1 of the present invention.
【００１９】図１に示すＳｉ系生成物製造装置はプラズ
マＣＶＤ装置等の装置であって、Ｓｉ系生成物形成容器
１に付属して材料ガス供給装置（図示せず）、材料ガス
導入部１０、真空排気ポンプ３、高周波電源９等が設置
されており、材料ガス供給装置から供給される材料ガス
（ＳｉＨ4 ガス等）を材料ガス導入部１０からＳｉ系生
成物形成容器１内に導入し、真空排気ポンプ３により真
空排気配管４及びポンプ後流排気配管５を通じてＳｉ系
生成物形成容器１内から材料ガスを排気してＳｉ系生成
物形成容器１内を所定の圧力にすると共に、高周波電源
９から電極８を介してＳｉ系生成物形成容器１内に高周
波電力を供給して材料ガスを励起しプラズマ状態とする
ことにより、Ｓｉ系生成物形成容器１内の被対象物にＳ
ｉ系生成物を付着させ又は独立にＳｉ系生成物を形成す
るように構成されている。The Si-based product manufacturing apparatus shown in FIG. 1 is an apparatus such as a plasma CVD apparatus, which is attached to the Si-based product forming container 1 and is equipped with a material gas supply device (not shown) and a material gas introduction unit 10. A vacuum pump 3, a high frequency power source 9 and the like are installed, and the material gas (SiH 4 gas or the like) supplied from the material gas supply device is introduced into the Si-based product forming container 1 from the material gas introduction unit 10. The material gas is exhausted from the inside of the Si-based product forming container 1 by the vacuum exhaust pump 3 through the vacuum exhaust pipe 4 and the pump downstream exhaust pipe 5 to make the inside of the Si-based product forming container 1 a predetermined pressure, By supplying high-frequency power from the power source 9 through the electrode 8 into the Si-based product forming container 1 to excite the material gas into a plasma state, the target object in the Si-based product forming container 1 is subjected to S
It is configured to deposit an i-based product or independently form a Si-based product.
【００２０】なお、図１中の６は電力導入端子、７は電
力導入端子６より導入されて高周波電源９と電極８とを
電気的に接続する電力導入ケーブルである。In FIG. 1, 6 is a power introducing terminal, and 7 is a power introducing cable introduced from the power introducing terminal 6 to electrically connect the high frequency power source 9 and the electrode 8.
【００２１】そして、本実施の形態１に係るＳｉ系生成
物製造装置内部の洗浄装置は、次のように構成されてい
る。The cleaning device inside the Si-based product manufacturing apparatus according to the first embodiment is constructed as follows.
【００２２】即ち、Ｓｉ系生成物形成容器１内に、Ｓｉ
系生成物形成容器１に付属して設置された水素ガス供給
装置（図示せず）から供給される水素（Ｈ2)ガスを、Ｓ
ｉ系生成物形成容器１に付属して設置された水素ガス導
入部２から導入し、真空排気ポンプ３により真空排気配
管４及びポンプ後流排気配管５を通じてＳｉ系生成物形
成容器１内から水素ガスを排気してＳｉ系生成物形成容
器１内を所定の圧力にする。That is, in the Si-based product forming container 1, Si
The hydrogen (H 2 ) gas supplied from a hydrogen gas supply device (not shown) installed attached to the system product forming container 1
Hydrogen is introduced from the hydrogen gas introduction part 2 installed attached to the i-based product forming container 1 and hydrogen is supplied from the inside of the Si-based product forming container 1 through the vacuum exhaust pump 3 through the vacuum exhaust pipe 4 and the pump downstream exhaust pipe 5. The gas is exhausted to bring the inside of the Si-based product forming container 1 to a predetermined pressure.
【００２３】そして、Ｓｉ系生成物形成のために高周波
電力をＳｉ系生成物形成容器１内に供給することを主目
的して設置された電気回路（高周波電源９と電極８とを
電力導入ケーブル７で接続してなる回路）を用いて、Ｓ
ｉ系生成物形成容器１内に高周波電力を供給する。An electric circuit installed for the purpose of supplying high-frequency power to the Si-based product forming container 1 for forming the Si-based product (the high-frequency power source 9 and the electrode 8 are connected to a power introduction cable). S) using the circuit connected in 7)
High frequency power is supplied into the i-based product forming container 1.
【００２４】このことにより、水素ガスを励起して水素
プラズマ状態し、この水素プラズマ中の水素ラジカル
と、Ｓｉ系生成物形成容器１内に不要に付着したＳｉ系
生成物とを反応させて、この不要なＳｉ系生成物を分解
し気化させ（即ちＳｉＨ4 ガスの状態にさせ）、真空排
気ポンプ３により真空排気配管４及びポンプ後流排気配
管５を通じてＳｉ系生成物形成容器１の外部へと排気す
ることによって、Ｓｉ系生成物形成容器１内を洗浄（不
要なＳｉ系生成物を除去）する。As a result, the hydrogen gas is excited to be in a hydrogen plasma state, and the hydrogen radicals in the hydrogen plasma are reacted with the Si-based products unnecessarily attached to the Si-based product forming container 1, This unnecessary Si-based product is decomposed and vaporized (that is, made into a state of SiH 4 gas), and is evacuated by the vacuum exhaust pump 3 to the outside of the Si-based product forming container 1 through the vacuum exhaust pipe 4 and the pump downstream exhaust pipe 5. Then, the inside of the Si-based product forming container 1 is washed (the unnecessary Si-based product is removed).
【００２５】従って、本実施の形態に係るＳｉ系生成物
製造装置内部の洗浄装置によれば、不要なＳｉ系生成物
除去用のガスとして水素ガスを用いており、この水素ガ
スはＳｉＨ4 ガスと混合しても爆発する虞がないことか
ら、真空排気配管４等を２系列にして水素ガスとＳｉＨ
4 ガスとを混合させないように弁よって制御する必要が
なく、また、水素ガスは一般の真空容器に用いられるＳ
ＵＳ材でも高温雰囲気下で腐食させることがないことか
ら、Ｓｉ系生成物形成容器１等を構成する主材料として
低コストのＳＵＳ材を用いることができる。このため、
装置全体のコストを低減させることができる。Therefore, according to the cleaning apparatus inside the Si-based product manufacturing apparatus according to the present embodiment, hydrogen gas is used as a gas for removing unnecessary Si-based products, and this hydrogen gas is SiH 4 gas. Since there is no danger of explosion even if mixed with
It is not necessary to control with a valve so that it does not mix with 4 gases, and hydrogen gas is used in general vacuum containers.
Since the US material does not corrode in a high temperature atmosphere, a low-cost SUS material can be used as a main material forming the Si-based product forming container 1 and the like. For this reason,
The cost of the entire device can be reduced.
【００２６】また、水素ガスはフッ素系ガスに比べて低
コストであることから、装置全体のランニングコストも
低減させることができる。Further, since hydrogen gas is lower in cost than fluorine-based gas, the running cost of the entire apparatus can be reduced.
【００２７】＜実施の形態２＞図２は本発明の実施の形
態２に係るＳｉ系生成物製造装置内部の洗浄装置の構成
図である。<Embodiment 2> FIG. 2 is a block diagram of a cleaning apparatus inside a Si-based product manufacturing apparatus according to Embodiment 2 of the present invention.
【００２８】図２に示すように、本実施の形態２に係る
Ｓｉ系生成物製造装置内部の洗浄装置では、水素ガス導
入部２の水素ガス導入部整器１２と材料ガス導入部１０
の材料ガス流量調整器１１の下流側において、水素ガス
導入部２と材料ガス導入部１０とが一本の導入配管２２
に統合されている。As shown in FIG. 2, in the cleaning apparatus inside the Si-based product manufacturing apparatus according to the second embodiment, the hydrogen gas introducing section conditioner 12 and the material gas introducing section 10 of the hydrogen gas introducing section 2 are used.
On the downstream side of the material gas flow rate regulator 11 of No. 1, the hydrogen gas introducing unit 2 and the material gas introducing unit 10 are provided as one introduction pipe 22.
Have been integrated into.
【００２９】即ち、上記実施の形態１では、水素ガス導
入部２と材料ガス導入部１０とを分離しているが、必ず
しもこのように両導入部２，１０を分離する必要はな
く、特に、ＳｉＨ4 ガスと水素ガスとをＳｉ系生成物を
形成するプロセスで同時に使用する場合には、上記のよ
うに両流量調整器１１，１２の下流側では両導入部２，
１０を一本の導入配管２２に統合してもなんら問題はな
い。That is, in the first embodiment, the hydrogen gas introducing part 2 and the material gas introducing part 10 are separated from each other, but it is not always necessary to separate the two introducing parts 2 and 10 in this way. When the SiH 4 gas and the hydrogen gas are used simultaneously in the process of forming the Si-based product, both the introduction parts 2, 2 are provided on the downstream side of the both flow rate controllers 11, 12 as described above.
There is no problem even if 10 is integrated into one introduction pipe 22.
【００３０】但し、ＳｉＨ4 ガスと水素ガスとをＳｉ系
生成物を形成するプロセスで同時に使用しない場合に
は、生成目的のＳｉ系生成物の特性を考慮し、水素ガス
による不要なＳｉ系生成物除去プロセスと生成目的のＳ
ｉ系生成物形成プロセスとでプロセスガスを切り替える
間のＳｉ系生成物形成容器１内の残留ガス特性を考慮し
て、配管設計をする必要がある。即ち、ＳｉＨ4 ガスと
水素ガスとをＳｉ系生成物形成プロセスで同時に使用し
ない場合にも、水素ガス導入部と材料ガス導入部とを統
合することはできるが、この場合には両導入部を単に統
合するだけでなく、配管設計において工夫が必要になる
こともある。However, when the SiH 4 gas and the hydrogen gas are not used simultaneously in the process of forming the Si-based product, the characteristics of the Si-based product to be produced are taken into consideration and unnecessary Si-based production by the hydrogen gas is performed. S for object removal process and generation
It is necessary to design the piping in consideration of the residual gas characteristics in the Si-based product forming container 1 during the process gas switching with the i-based product forming process. That is, even when the SiH 4 gas and the hydrogen gas are not used simultaneously in the Si-based product forming process, the hydrogen gas introduction part and the material gas introduction part can be integrated, but in this case, both introduction parts are combined. In some cases, it is necessary to devise not only the integration but also the piping design.
【００３１】例えば、図３に示すように、Ｓｉ系生成物
形成プロセスに必要なＳｉＨ4 ガス及びその他のガスの
導入部１０Ａ，１０Ｂと、Ｓｉ系生成物形成プロセスに
は不必要な水素ガス導入部２とを、ＳｉＨ4 ガス流量調
整器１１Ａ、その他のガス流量調整器１１Ｂ及び水素ガ
ス流量調整器１２の下流側において統合し、チャンバ導
入弁Ｄ１を介してＳｉ系生成物形成容器１に接続した場
合には、Ｓｉ系生成物形成プロセスに入る前に、チャン
バ導入弁Ｄ１から弁Ｈ１の間の不必要な残留水素ガスを
十分に真空排気して除去し、その後、弁Ｓ１，Ｅ１を開
けて材料ガスを導入するようにしないと、Ｓｉ系生成物
形成プロセス中に不必要な水素ガスが混入する虞があ
る。このため配管内のガス抜きに時間がかかり、装置の
生産性が低下する。そこで、生産性に配慮が要る場合に
は下記の対応が必要となる。For example, as shown in FIG. 3, SiH 4 gas and other gas introduction parts 10A and 10B necessary for the Si-based product forming process and hydrogen gas introduction unnecessary for the Si-based product forming process. The section 2 is integrated on the downstream side of the SiH 4 gas flow rate regulator 11A, the other gas flow rate regulators 11B and the hydrogen gas flow rate regulator 12, and is connected to the Si-based product forming container 1 via the chamber introduction valve D1. In this case, before the Si-based product formation process is started, unnecessary residual hydrogen gas between the chamber introduction valve D1 and the valve H1 is sufficiently evacuated and removed, and then the valves S1 and E1 are opened. If the material gas is not introduced by such a method, unnecessary hydrogen gas may be mixed during the Si-based product formation process. For this reason, it takes time to degas the inside of the pipe, and the productivity of the apparatus is reduced. Therefore, if productivity needs to be considered, the following measures are necessary.
【００３２】図１のように水素ガス導入部と材料ガス導
入部とを分割する。または、図３のＡ部（水素ガス導入
部の統合部近く）に弁を設置しておく等、残留水素ガス
除去時間の短縮を考慮する。As shown in FIG. 1, the hydrogen gas introducing section and the material gas introducing section are divided. Alternatively, the reduction of the residual hydrogen gas removal time may be considered by, for example, installing a valve in part A of FIG. 3 (near the integrated part of the hydrogen gas introduction part).
【００３３】なお、その他の構成は上記実施の形態１と
同様であるため、ここでの詳細な説明は省略する。Since the other structure is the same as that of the first embodiment, the detailed description is omitted here.
【００３４】従って、本実施の形態２に係るＳｉ系生成
物製造装置内部の洗浄装置によれば、水素ガス導入部２
と材料ガス導入部１０とを統合したため、その分、装置
構成が簡素になり、装置全体のコスト低減を図ることが
できる。Therefore, according to the cleaning apparatus inside the Si-based product manufacturing apparatus according to the second embodiment, the hydrogen gas introducing unit 2
Since the material gas introduction unit 10 and the material gas introduction unit 10 are integrated, the structure of the apparatus can be simplified and the cost of the entire apparatus can be reduced.
【００３５】＜実施の形態３＞図４は本発明の実施の形
態３に係るＳｉ系生成物製造装置内部の洗浄装置の構成
図である。<Third Embodiment> FIG. 4 is a block diagram of a cleaning device inside a Si-based product manufacturing apparatus according to a third embodiment of the present invention.
【００３６】図４に示すように、本実施の形態３に係る
Ｓｉ系生成物製造装置内部の洗浄装置では、Ｓｉ系生成
物形成容器１内に、電極８の他、電極１３，１４が図中
左右両側にそれぞれ配設されている。As shown in FIG. 4, in the cleaning apparatus for the inside of the Si-based product manufacturing apparatus according to the third embodiment, in the Si-based product forming container 1, in addition to the electrode 8, the electrodes 13 and 14 are illustrated. They are arranged on both the left and right sides.
【００３７】即ち、上記実施の形態１では、Ｓｉ系生成
物形成時にＳｉ系生成物形成容器１内に高周波電力を供
給することを主目的として設けられた電極８を、不要な
Ｓｉ系生成物除去時にも利用して、この電極８から不要
なＳｉ系生成物除去用の水素ガスを励起するための高周
波電力をＳｉ系生成物形成容器１内に供給するように構
成されているが、この場合、水素プラズマは電極８の近
傍にしか拡散できないため、Ｓｉ系生成物形成容器１内
の全てにおいて不要なＳｉ系生成物を除去することがで
きないことがある。That is, in the first embodiment, the electrode 8 provided mainly for supplying high-frequency power into the Si-based product forming container 1 at the time of forming the Si-based product is used as the unnecessary Si-based product. The high-frequency power for exciting the hydrogen gas for removing the unnecessary Si-based product is supplied from the electrode 8 into the Si-based product forming container 1 by utilizing it also during the removal. In this case, since hydrogen plasma can diffuse only in the vicinity of the electrode 8, it may not be possible to remove unnecessary Si-based products in the entire Si-based product forming container 1.
【００３８】このため、本実施の形態３では、上記のよ
うに、電極８の他、電極１３，１４も設け、これらの電
極１３，１４からも高周波電力をＳｉ系生成物形成容器
１内に供給してＳｉ系生成物形成容器１内全体に水素プ
ラズマが拡散するように構成されている。For this reason, in the third embodiment, as described above, the electrodes 13 and 14 are provided in addition to the electrode 8, and high-frequency power is also supplied from these electrodes 13 and 14 into the Si-based product forming container 1. It is configured so that hydrogen plasma is supplied and hydrogen plasma is diffused throughout the Si-based product formation container 1.
【００３９】なお、電極８，１３，１４は何れも高周波
電力分配部１５を介して一つの高周波電源９に接続され
ているが、Ｓｉ系生成物形成プロセスでは電極８からの
み高周波電力をＳｉ系生成物形成容器１内に供給し、Ｓ
ｉ系生成物除去プロセスでは電極８，１３，１４の全て
から高周波電力をＳｉ系生成物形成容器１内に供給する
必要がある。このため、高周波電力分配部１５では図示
しない接続切り替えスイッチ等を備えており、自動又は
手動によって、Ｓｉ系生成物形成プロセスとＳｉ系生成
物除去プロセスとで高周波電力の供給形態を上記の如く
変更することができるようになっている。The electrodes 8, 13 and 14 are all connected to one high-frequency power source 9 through the high-frequency power distribution unit 15. However, in the Si-based product forming process, the high-frequency power is supplied only from the electrode 8 to the Si-based power. It is supplied into the product forming container 1 and S
In the i-based product removal process, it is necessary to supply high-frequency power into the Si-based product forming container 1 from all the electrodes 8, 13, and 14. Therefore, the high-frequency power distribution unit 15 is provided with a connection changeover switch (not shown), etc., and the supply form of the high-frequency power is automatically or manually changed between the Si-based product forming process and the Si-based product removing process as described above. You can do it.
【００４０】その他の構成は上記実施の形態１と同様で
あるため、ここでの詳細な説明は省略する。Since the other structure is the same as that of the first embodiment, the detailed description is omitted here.
【００４１】従って、本実施の形態３に係るＳｉ系生成
物製造装置内部の洗浄装置によれば、複数の電極８，１
３，１４をＳｉ系生成物形成容器１内に配設し、Ｓｉ系
生成物除去プロセスでは全ての電極８，１３，１４から
高周波電力をＳｉ系生成物形成容器１内に供給して、Ｓ
ｉ系生成物形成容器１内全体に水素プラズマが拡散する
ようしたため、確実にＳｉ系生成物形成容器１内の全て
において不要なＳｉ系生成物を除去することができる。Therefore, according to the cleaning apparatus inside the Si-based product manufacturing apparatus according to the third embodiment, the plurality of electrodes 8, 1
3, 14 are arranged in the Si-based product forming container 1, and in the Si-based product removing process, high-frequency power is supplied from all the electrodes 8, 13, 14 into the Si-based product forming container 1, and S
Since hydrogen plasma is made to diffuse in the entire i-based product forming container 1, unnecessary Si-based products can be reliably removed in all of the Si-based product forming container 1.
【００４２】＜実施の形態４＞図５は本発明の実施の形
態４に係るＳｉ系生成物製造装置内部の洗浄装置の構成
図である。<Fourth Embodiment> FIG. 5 is a block diagram of a cleaning apparatus inside a Si-based product manufacturing apparatus according to a fourth embodiment of the present invention.
【００４３】図５に示すように、本実施の形態４に係る
Ｓｉ系生成物製造装置内部の洗浄装置では、Ｓｉ系生成
物形成容器１内に設けられた複数の電極８，１３，１４
に対してそれぞれ個別の高周波電源９，１６，１７から
高周波電力が供給されるようになっている。As shown in FIG. 5, in the cleaning apparatus inside the Si-based product manufacturing apparatus according to the fourth embodiment, a plurality of electrodes 8, 13, 14 provided in the Si-based product forming container 1 are provided.
High frequency power is supplied from the individual high frequency power supplies 9, 16 and 17, respectively.
【００４４】なお、その他の構成は上記実施の形態１，
３と同様であるため、ここでの詳細な説明は省略する。The other configurations are the same as those in the first embodiment.
Since it is the same as No. 3, detailed description thereof is omitted here.
【００４５】従って、本実施の形態４に係るＳｉ系生成
物製造装置内部の洗浄装置によれば、複数の電極８，１
３，１４に対してそれぞれ個別の高周波電源９，１６，
１７から高周波電力を供給するようにしたため、接続切
り替えスイッチ等を設ける必要がなく、各高周波電源
９，１６，１７をＯＮ・ＯＦＦするだけでＳｉ系生成物
形成プロセスとＳｉ系生成物除去プロセスの高周波電力
の供給形態を変更することができ、また、各電極８，１
３，１４からＳｉ系生成物形成容器１内に供給する高周
波電力の調整もそれぞれ個別に行うことができる。Therefore, according to the cleaning apparatus inside the Si-based product manufacturing apparatus according to the fourth embodiment, a plurality of electrodes 8, 1 are provided.
High frequency power sources 9 and 16 for 3 and 14 respectively
Since the high-frequency power is supplied from 17, it is not necessary to provide a connection changeover switch or the like, and by simply turning on / off each high-frequency power supply 9, 16, 17, the Si-based product formation process and the Si-based product removal process can be performed. The supply form of high frequency power can be changed, and each electrode 8, 1
The high-frequency power supplied from 3, 14 into the Si-based product forming container 1 can be adjusted individually.
【００４６】＜実施の形態５＞図６は本発明の実施の形
態５に係るＳｉ系生成物製造装置内部の洗浄装置の構成
図である。<Fifth Embodiment> FIG. 6 is a block diagram of a cleaning device inside a Si-based product manufacturing apparatus according to a fifth embodiment of the present invention.
【００４７】図６に示すように、本実施の形態５に係る
Ｓｉ系生成物製造装置内部の洗浄装置では、Ｓｉ系生成
物形成容器１と真空排気ポンプ３との間の真空排気配管
４内にも電極２０が配設されている。この電極２０は電
力導入端子１９及び電力導入ケーブル２１を介して高周
波電源１８に接続されている。As shown in FIG. 6, in the cleaning apparatus inside the Si-based product manufacturing apparatus according to the fifth embodiment, inside the vacuum exhaust pipe 4 between the Si-based product forming container 1 and the vacuum exhaust pump 3. Also, the electrode 20 is provided. The electrode 20 is connected to the high frequency power source 18 via a power introduction terminal 19 and a power introduction cable 21.
【００４８】即ち、Ｓｉ系生成物除去プロセスでは、Ｓ
ｉ系生成物形成容器１内だけでなく、真空排気配管４内
にも電極２０を介して高周波電源１８から高周波電力が
供給されるようになっている。That is, in the Si-based product removal process, S
High-frequency power is supplied from the high-frequency power source 18 via the electrode 20 not only into the i-based product forming container 1 but also into the vacuum exhaust pipe 4.
【００４９】なお、その他の構成は上記実施の形態１と
同様であるため、ここでの詳細な説明は省略する。Since the other structure is the same as that of the first embodiment, detailed description thereof is omitted here.
【００５０】本実施の形態５に係るＳｉ系生成物製造装
置内部の洗浄装置によれば、真空排気配管４内に電極２
０を設け、この電極２０を介して真空排気配管４内にも
高周波電力を供給するようにしたため、この高周波電力
により真空排気配管４内に流れ込んだ水素ガスが励起さ
れて水素プラズマ状態となり、この水素プラズマ中の水
素ラジカルと真空排気配管４内の不要なＳｉ系生成物と
が反応し、この不要なＳｉ系生成物が分解し気化して、
真空排気ポンプ３により真空排気配管４の外部へと排気
されることから、真空排気配管４内の不要なＳｉ系生成
物も除去することができる。According to the cleaning apparatus for the inside of the Si-based product manufacturing apparatus according to the fifth embodiment, the electrode 2 is provided in the vacuum exhaust pipe 4.
0 is provided and high-frequency power is also supplied into the vacuum exhaust pipe 4 through this electrode 20, so that the hydrogen gas flowing into the vacuum exhaust pipe 4 is excited by this high-frequency power to be in a hydrogen plasma state. Hydrogen radicals in the hydrogen plasma react with unnecessary Si-based products in the vacuum exhaust pipe 4, and the unnecessary Si-based products are decomposed and vaporized,
Since it is exhausted to the outside of the vacuum exhaust pipe 4 by the vacuum exhaust pump 3, unnecessary Si-based products in the vacuum exhaust pipe 4 can also be removed.
【００５１】なお、真空排気配管４内だけでなく、その
他の部位内にも不要なＳｉ系生成物が付着する場合に
は、当該部位内にも水素ガスを導入すると共に電極を配
設して高周波電力を供給するように構成することによ
り、当該部位内の不要なＳｉ系生成物も除去することが
できる。When unnecessary Si-based products adhere not only in the vacuum exhaust pipe 4 but also in other parts, hydrogen gas is introduced into the parts and electrodes are arranged. By configuring to supply high-frequency power, unnecessary Si-based products in the site can be removed.
【００５２】また、上記実施の形態１〜５における電極
８，１３，１４，２０の材質や構造（形状）や電気回路
構成は、目的とするＳｉ系生成物形成容器内や排気配管
内等に高周波電力を供給して水素ガスを水素プラズマ状
態とすることができるものであればどのようなものであ
ってもよい。Further, the materials, structures (shapes) and electric circuit configurations of the electrodes 8, 13, 14, 20 in the above-mentioned first to fifth embodiments are set in the target Si-based product forming container, exhaust pipe, etc. Any material can be used as long as it can supply high-frequency power to bring hydrogen gas into a hydrogen plasma state.
【００５３】以上詳しく述べたように、不要なＳｉ系生
成物除去用のガスとして水素ガスを採用すると共に、種
々の電極材質、構造（形状）、位置及び個数、種々の高
周波電源個数とそれら電極とを組み合わせた種々の電気
回路構成、及び、種々の水素ガス導入部構成を採用する
ことにより、目的とするＳｉ系生成物形成容器内や排気
配管内等から不要なＳｉ系生成物を除去するのに有効な
洗浄装置を構成することができる。As described above in detail, hydrogen gas is adopted as a gas for removing unnecessary Si-based products, and various electrode materials, structures (shapes), positions and numbers, various high frequency power source numbers and those electrodes are used. By adopting various electric circuit configurations in combination with and various hydrogen gas introduction section configurations, unnecessary Si-based products are removed from the target Si-based product forming container, exhaust pipe, etc. It is possible to construct a cleaning device effective for the above.
【００５４】[0054]
【発明の効果】以上、発明の実施の形態と共に具体的に
説明したように、第１発明のＳｉ系生成物製造装置内部
の洗浄方法は、材料ガス供給装置から供給される材料ガ
スを材料ガス導入部からＳｉ系生成物形成容器内に導入
し、真空排気ポンプにより排気配管を通じて前記Ｓｉ系
生成物形成容器内から前記材料ガスを排気して前記Ｓｉ
系生成物形成容器内を所定の圧力にすると共に、高周波
電源から電極を介して前記Ｓｉ系生成物製造装置内に高
周波電力を供給して前記材料ガスを励起しプラズマ状態
とすることにより、前記Ｓｉ系生成物形成容器内の被対
象物にＳｉ系生成物を付着させ又は独立にＳｉ系生成物
を形成するように構成されたＳｉ系生成物製造装置の内
部の洗浄方法であって、前記Ｓｉ系生成物形成容器内、
排気配管内又はその他の部位内に、水素ガス供給装置か
ら供給される水素ガスを水素ガス導入部から導入すると
共に前記高周波電源又はその他の高周波電源から前記電
極又はその他の電極を介して高周波電力を供給すること
により、前記水素ガスを励起し水素プラズマ状態とし
て、この水素プラズマ中の水素ラジカルと、前記Ｓｉ系
生成物形成容器内、排気配管内又はその他の部位内に不
要に付着したＳｉ系生成物とを反応させ、この不要なＳ
ｉ系生成物を分解し気化させて前記Ｓｉ系生成物形成容
器、前記排気配管又はその他の部位の外部へと排気する
ことにより、前記Ｓｉ系生成物形成容器内、排気配管内
又はその他の部位内を洗浄することを特徴とする。As described above in detail with the embodiments of the present invention, the cleaning method for the inside of the Si-based product manufacturing apparatus of the first invention uses the material gas supplied from the material gas supply device as the material gas. The Si gas is introduced into the Si-based product forming container from the introduction portion, and the material gas is exhausted from the Si-based product forming container through an exhaust pipe by a vacuum exhaust pump to generate the Si-based product forming container.
By setting a predetermined pressure in the system product forming container and supplying high frequency power from the high frequency power source to the inside of the Si system product manufacturing apparatus through an electrode to excite the material gas into a plasma state, A method for cleaning the inside of a Si-based product manufacturing apparatus configured to attach a Si-based product to an object in a Si-based product forming container or independently form a Si-based product, comprising: In the Si-based product forming container,
In the exhaust pipe or in other parts, while introducing the hydrogen gas supplied from the hydrogen gas supply device from the hydrogen gas introduction part, high-frequency power from the high-frequency power source or other high-frequency power source through the electrodes or other electrodes By supplying, the hydrogen gas is excited to form a hydrogen plasma state, and the hydrogen radicals in the hydrogen plasma and the Si-based generation that is unnecessarily attached to the inside of the Si-based product forming container, the exhaust pipe, or other portions. Reacts with things, this unnecessary S
By decomposing and vaporizing the i-based product and discharging the i-based product to the outside of the Si-based product forming container, the exhaust pipe, or another part, the inside of the Si-based product forming container, the exhaust pipe, or another part It is characterized in that the inside is washed.
【００５５】また、第２発明のＳｉ系生成物製造装置内
部の洗浄装置は、材料ガス供給装置から供給される材料
ガスを材料ガス導入部からＳｉ系生成物形成容器内に導
入し、真空排気ポンプにより排気配管を通じて前記Ｓｉ
系生成物形成容器内から前記材料ガスを排気して前記Ｓ
ｉ系生成物形成容器内を所定の圧力にすると共に、高周
波電源から電極を介して前記Ｓｉ系生成物形成容器内に
高周波電力を供給して前記材料ガスを励起しプラズマ状
態とすることにより、前記Ｓｉ系生成物形成容器内の被
対象物にＳｉ系生成物を付着させ又は独立にＳｉ系生成
物を形成するように構成されたＳｉ系生成物製造装置の
内部の洗浄装置であって、前記Ｓｉ系生成物形成容器内
に、水素ガス供給装置から供給される水素ガスを水素ガ
ス導入部から導入すると共に前記高周波電源又はその他
の高周波電源から前記電極又はその他の電極を介して高
周波電力を供給することにより、前記水素ガスを励起し
水素プラズマ状態として、この水素プラズマ中の水素ラ
ジカルと、前記Ｓｉ系生成物形成容器内に不要に付着し
たＳｉ系生成物とを反応させ、この不要なＳｉ系生成物
を分解し気化させて前記Ｓｉ系生成物形成容器の外部へ
と排気することにより、前記Ｓｉ系生成物形成容器内を
洗浄するように構成したことを特徴とする。The cleaning device inside the Si-based product manufacturing apparatus of the second invention introduces the material gas supplied from the material gas supply device into the Si-based product forming container from the material gas introduction unit, and evacuates it. The Si is pumped through the exhaust pipe.
The material gas is exhausted from the inside of the system product forming container, and the S
By setting a predetermined pressure in the i-based product forming container and supplying high-frequency power from the high-frequency power source to the inside of the Si-based product forming container through an electrode to excite the material gas into a plasma state, A cleaning device inside a Si-based product manufacturing apparatus configured to attach a Si-based product to an object in the Si-based product forming container or independently form the Si-based product, Into the Si-based product forming container, a hydrogen gas supplied from a hydrogen gas supply device is introduced from a hydrogen gas introduction part, and high-frequency power is supplied from the high-frequency power supply or another high-frequency power supply through the electrode or another electrode. By supplying, the hydrogen gas is excited to form a hydrogen plasma state, and hydrogen radicals in the hydrogen plasma and Si-based products unnecessarily attached to the Si-based product forming container The inside of the Si-based product forming container is cleaned by reacting, decomposing and vaporizing the unnecessary Si-based product and exhausting it to the outside of the Si-based product forming container. And
【００５６】従って、この第１及び第２発明のＳｉ系生
成物製造装置内部の洗浄方法及び装置によれば、不要な
Ｓｉ系生成物除去用のガスとして水素ガスを用いてお
り、この水素ガスは材料ガスの一つであるＳｉＨ4 ガス
と混合しても爆発する虞がないことから、排気配管等を
２系列にして水素ガスとＳｉＨ4 ガスとを混合させない
ように弁によって制御する必要がなく、また、水素ガス
はＳＵＳ材でも高温雰囲気下で腐食させることがないこ
とから、Ｓｉ系生成物形成容器等を構成する主材料とし
て低コストのＳＵＳ材を用いることができる。このた
め、装置全体のコストを低減させることができる。Therefore, according to the cleaning method and apparatus inside the Si-based product manufacturing apparatus of the first and second inventions, hydrogen gas is used as a gas for removing unnecessary Si-based products. Does not explode when mixed with SiH 4 gas, which is one of the material gases, so it is necessary to control the valve so as not to mix hydrogen gas and SiH 4 gas by making the exhaust piping etc. two lines. In addition, since hydrogen gas does not corrode even in a SUS material in a high temperature atmosphere, a low-cost SUS material can be used as a main material forming a Si-based product forming container or the like. Therefore, the cost of the entire device can be reduced.
【００５７】また、水素ガスはフッ素系ガスに比べて低
コストであることから、装置全体のランニングコストも
低減させることができる。Further, since hydrogen gas is lower in cost than fluorine-based gas, the running cost of the entire apparatus can be reduced.
【００５８】また、第３発明のＳｉ系生成物製造装置内
部の洗浄装置は、第２発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記材料ガス導入部と前記水素ガ
ス導入部とを統合したことを特徴とする。A cleaning device inside the Si-based product manufacturing apparatus according to the third aspect of the present invention is the cleaning apparatus inside the Si-based product manufacturing apparatus according to the second aspect of the present invention, in which the material gas introducing section and the hydrogen gas introducing section are provided. It is characterized by being integrated.
【００５９】従って、この第３発明のＳｉ系生成物製造
装置内部の洗浄装置によれば、水素ガス導入部と材料ガ
ス導入部とを統合したため、その分、装置構成が簡素に
なり、装置全体のコスト低減を図ることができる。Therefore, according to the cleaning apparatus for the inside of the Si-based product manufacturing apparatus of the third invention, since the hydrogen gas introducing section and the material gas introducing section are integrated, the apparatus configuration is correspondingly simplified and the entire apparatus is provided. The cost can be reduced.
【００６０】また、第４発明のＳｉ系生成物製造装置内
部の洗浄装置は、第２発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記Ｓｉ系生成物形成容器内の複
数箇所に電極を配設し、不要なＳｉ系生成物を除去する
際には、これら複数の電極を介して前記Ｓｉ系生成物形
成容器内の複数箇所に高周波電力を供給するように構成
したことを特徴とする。The cleaning device inside the Si-based product manufacturing apparatus according to the fourth aspect of the present invention is the cleaning apparatus inside the Si-based product manufacturing apparatus according to the second aspect of the present invention, wherein electrodes are provided at a plurality of locations in the Si-based product forming container. And is configured to supply high-frequency power to a plurality of locations in the Si-based product forming container through the plurality of electrodes when removing unnecessary Si-based products. To do.
【００６１】従って、この第４発明のＳｉ系生成物製造
装置内部の洗浄装置によれば、複数の電極をＳｉ系生成
物形成容器１内に配設して、Ｓｉ系生成物形成容器１内
全体に水素プラズマが拡散するようしたため、確実にＳ
ｉ系生成物形成容器１内の全てにおいて不要なＳｉ系生
成物を除去することができる。Therefore, according to the cleaning apparatus inside the Si-based product manufacturing apparatus of the fourth aspect of the present invention, the plurality of electrodes are arranged in the Si-based product forming container 1 so that the inside of the Si-based product forming container 1 is improved. Since hydrogen plasma was made to diffuse throughout, S
Unnecessary Si-based products can be removed from the entire i-based product formation container 1.
【００６２】また、第５発明のＳｉ系生成物製造装置内
部の洗浄装置は、第４発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記複数の電極に対してそれぞれ
個別の高周波電源から高周波電力を供給するように構成
したことを特徴とする。The cleaning device inside the Si-based product manufacturing apparatus according to the fifth aspect of the present invention is the cleaning apparatus inside the Si-based product manufacturing apparatus according to the fourth aspect of the invention. It is characterized in that it is configured to supply high frequency power.
【００６３】従って、この第５発明のＳｉ系生成物製造
装置内部の洗浄装置によれば、複数の電極に対してそれ
ぞれ個別の高周波電源から高周波電力を供給するように
構成したため、接続切り替えスイッチ等を設ける必要が
なく、各高周波電源をＯＮ・ＯＦＦするだけでＳｉ系生
成物生成プロセスとＳｉ系生成物除去プロセスとの高周
波電力の供給形態を変更することができ、また、各電極
からＳｉ系生成物形成容器内に供給する高周波電力の調
整もそれぞれ個別に行うことができる。Therefore, according to the cleaning apparatus inside the Si-based product manufacturing apparatus of the fifth aspect of the present invention, the high-frequency power is supplied to each of the plurality of electrodes from the individual high-frequency power source. It is possible to change the supply form of high-frequency power in the Si-based product generation process and the Si-based product removal process by simply turning ON / OFF each high-frequency power supply, and it is also possible to change the Si-based power from each electrode. The high frequency power supplied to the product forming container can be adjusted individually.
【００６４】また、第６発明のＳｉ系生成物製造装置内
部の洗浄装置は、第６発明のＳｉ系生成物製造装置内部
の洗浄装置において、前記Ｓｉ系生成物形成容器と前記
真空ポンプとの間の排気配管内又はその他の部位内にも
電極を設け、この電極を介して前記高周波電源又はその
他の高周波電源から前記排気配管内又はその他の部位内
にも高周波電力を供給するよう構成したことを特徴とす
る。A cleaning device inside the Si-based product manufacturing apparatus of the sixth invention is the same as the cleaning apparatus inside the Si-based product manufacturing apparatus of the sixth invention, in which the Si-based product forming container and the vacuum pump are connected. Electrodes are also provided in the exhaust pipe between or in other parts, and high-frequency power is also supplied from the high-frequency power source or other high-frequency power source to the inside of the exhaust pipe or other parts through the electrodes. Is characterized by.
【００６５】従って、この第６発明のＳｉ系生成物製造
装置内部の洗浄装置によれば、排気配管内又はその他の
部位内にも電極を設け、この電極を介して排気配管内又
はその他の部位内にも高周波電力を供給するようにした
ため、排気配管内又はその他の部位内の不要なＳｉ系生
成物も除去することができる。Therefore, according to the cleaning device for the inside of the Si-based product manufacturing apparatus of the sixth aspect of the present invention, the electrode is provided also in the exhaust pipe or in the other portion, and the electrode is provided in the exhaust pipe or the other portion through this electrode. Since the high frequency power is supplied also to the inside, unnecessary Si-based products in the exhaust pipe or other parts can be removed.
【図１】本発明の実施の形態１に係るＳｉ系生成物製造
装置内部の洗浄装置の構成図である。FIG. 1 is a configuration diagram of a cleaning device inside a Si-based product manufacturing apparatus according to a first embodiment of the present invention.
【図２】本発明の実施の形態２に係るＳｉ系生成物製造
装置内部の洗浄装置の構成図である。FIG. 2 is a configuration diagram of a cleaning device inside a Si-based product manufacturing apparatus according to a second embodiment of the present invention.
【図３】水素ガス導入部と材料ガス導入部とを統合する
場合の他の構成例を示す要部構成図である。FIG. 3 is a main part configuration diagram showing another configuration example in the case of integrating the hydrogen gas introduction unit and the material gas introduction unit.
【図４】本発明の実施の形態３に係るＳｉ系生成物製造
装置内部の洗浄装置の構成図である。FIG. 4 is a configuration diagram of a cleaning device inside a Si-based product manufacturing apparatus according to a third embodiment of the present invention.
【図５】本発明の実施の形態４に係るＳｉ系生成物製造
装置内部の洗浄装置の構成図である。FIG. 5 is a configuration diagram of a cleaning device inside a Si-based product manufacturing apparatus according to a fourth embodiment of the present invention.
【図６】本発明の実施の形態５に係るＳｉ系生成物製造
装置内部の洗浄装置の構成図である。FIG. 6 is a configuration diagram of a cleaning device inside a Si-based product manufacturing apparatus according to a fifth embodiment of the present invention.
【図７】従来のＳｉ系生成物製造装置内部の洗浄装置の
構成図である。FIG. 7 is a configuration diagram of a cleaning device inside a conventional Si-based product manufacturing apparatus.
１ Ｓｉ系生成物形成容器 ２ 水素ガス導入部 ３ 真空排気ポンプ ４ 真空排気配管 ５ ポンプ後流排気配管 ６，１９ 電力導入端子 ７，２１ 電力導入ケーブル ８，１３，１４，２０ 電極 ９，１６，１７，１８ 高周波電源 １０ 材料ガス導入部 １０Ａ ＳｉＦ4 ガス導入部 １０Ｂ その他のガス導入部 １１ 材料ガス流量調整器 １１Ａ ＳｉＦ4 ガス流量調整器 １１Ｂ その他のガス流量調整器 １２ 水素ガス流量調整器 １５ 高周波電力分配部 ２２ 導入配管 Ｄ１ チャンバ導入弁 Ｅ１，Ｈ１，Ｓ１ 弁1 Si-based Product Forming Container 2 Hydrogen Gas Introducing Section 3 Vacuum Exhaust Pump 4 Vacuum Exhaust Piping 5 Pump Backflow Exhaust Piping 6,19 Power Introducing Terminal 7,21 Power Introducing Cable 8,13,14,20 Electrode 9,16, 17, 18 High-frequency power source 10 Material gas introduction section 10A SiF 4 gas introduction section 10B Other gas introduction section 11 Material gas flow rate regulator 11A SiF 4 gas flow rate regulator 11B Other gas flow rate regulator 12 Hydrogen gas flow rate regulator 15 High frequency Power distribution unit 22 Introduction pipe D1 Chamber introduction valve E1, H1, S1 valve
フロントページの続き (56)参考文献 特開 平５−62936（ＪＰ，Ａ) 特開 平７−78802（ＪＰ，Ａ) 特開 平11−177104（ＪＰ，Ａ) 特開 平８−213370（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/304 H01L 21/205 H01L 21/3065 Continuation of the front page (56) Reference JP-A-5-62936 (JP, A) JP-A-7-78802 (JP, A) JP-A-11-177104 (JP, A) JP-A-8-213370 (JP , A) (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/304 H01L 21/205 H01L 21/3065
Claims (6)
スを材料ガス導入部からＳｉ系生成物形成容器内に導入
し、真空排気ポンプにより排気配管を通じて前記Ｓｉ系
生成物形成容器内から前記材料ガスを排気して前記Ｓｉ
系生成物形成容器内を所定の圧力にすると共に、高周波
電源から電極を介して前記Ｓｉ系生成物製造装置内に高
周波電力を供給して前記材料ガスを励起しプラズマ状態
とすることにより、前記Ｓｉ系生成物形成容器内の被対
象物にＳｉ系生成物を付着させ又は独立にＳｉ系生成物
を形成するように構成されたＳｉ系生成物製造装置の内
部の洗浄方法であって、 前記Ｓｉ系生成物形成容器内、排気配管内又はその他の
部位内に、水素ガス供給装置から供給される水素ガスを
水素ガス導入部から導入すると共に前記高周波電源又は
その他の高周波電源から前記電極又はその他の電極を介
して高周波電力を供給することにより、前記水素ガスを
励起し水素プラズマ状態として、この水素プラズマ中の
水素ラジカルと、前記Ｓｉ系生成物形成容器内、排気配
管内又はその他の部位内に不要に付着したＳｉ系生成物
とを反応させ、この不要なＳｉ系生成物を分解し気化さ
せて前記Ｓｉ系生成物形成容器、前記排気配管又はその
他の部位の外部へと排気することにより、前記Ｓｉ系生
成物形成容器内、排気配管内又はその他の部位内を洗浄
することを特徴とするＳｉ系生成物製造装置内部の洗浄
方法。1. A material gas supplied from a material gas supply device is introduced into a Si-based product forming container from a material gas introducing unit, and the material is supplied from the inside of the Si-based product forming container through an exhaust pipe by a vacuum exhaust pump. The gas is exhausted and the Si
By setting a predetermined pressure in the system product forming container and supplying high frequency power from the high frequency power source to the inside of the Si system product manufacturing apparatus through an electrode to excite the material gas into a plasma state, A method for cleaning the inside of a Si-based product manufacturing apparatus configured to adhere a Si-based product to an object in a Si-based product forming container or independently form a Si-based product, The hydrogen gas supplied from the hydrogen gas supply device is introduced from the hydrogen gas introduction part into the Si-based product forming container, the exhaust pipe, or other parts, and the electrode or the other from the high frequency power source or other high frequency power source. By supplying high-frequency power through the electrode of, the hydrogen gas is excited into a hydrogen plasma state, the hydrogen radicals in the hydrogen plasma, and the Si-based product forming container, Reacting with Si-based products that are unnecessarily adhered in the exhaust pipe or other parts, and decompose and vaporize the unnecessary Si-based products to form the Si-based product forming container, the exhaust pipe, or other parts. A method for cleaning the inside of a Si-based product manufacturing apparatus, characterized in that the inside of the Si-based product forming container, the exhaust pipe, or the inside of the other part is cleaned by exhausting to the outside.
スを材料ガス導入部からＳｉ系生成物形成容器内に導入
し、真空排気ポンプにより排気配管を通じて前記Ｓｉ系
生成物形成容器内から前記材料ガスを排気して前記Ｓｉ
系生成物形成容器内を所定の圧力にすると共に、高周波
電源から電極を介して前記Ｓｉ系生成物形成容器内に高
周波電力を供給して前記材料ガスを励起しプラズマ状態
とすることにより、前記Ｓｉ系生成物形成容器内の被対
象物にＳｉ系生成物を付着させ又は独立にＳｉ系生成物
を形成するように構成されたＳｉ系生成物製造装置の内
部の洗浄装置であって、 前記Ｓｉ系生成物形成容器内に、水素ガス供給装置から
供給される水素ガスを水素ガス導入部から導入すると共
に前記高周波電源又はその他の高周波電源から前記電極
又はその他の電極を介して高周波電力を供給することに
より、前記水素ガスを励起し水素プラズマ状態として、
この水素プラズマ中の水素ラジカルと、前記Ｓｉ系生成
物形成容器内に不要に付着したＳｉ系生成物とを反応さ
せ、この不要なＳｉ系生成物を分解し気化させて前記Ｓ
ｉ系生成物形成容器の外部へと排気することにより、前
記Ｓｉ系生成物形成容器内を洗浄するように構成したこ
とを特徴とするＳｉ系生成物製造装置内部の洗浄装置。2. A material gas supplied from a material gas supply device is introduced into a Si-based product forming container from a material gas introduction part, and the material is supplied from the inside of the Si-based product forming container through an exhaust pipe by a vacuum exhaust pump. The gas is exhausted and the Si
By setting a predetermined pressure in the system product forming container and supplying a high frequency power from the high frequency power source to the inside of the Si system product forming container through an electrode to excite the material gas into a plasma state, A cleaning device inside a Si-based product manufacturing apparatus configured to attach the Si-based product to an object in a Si-based product forming container or independently form the Si-based product, The hydrogen gas supplied from the hydrogen gas supply device is introduced into the Si-based product forming container from the hydrogen gas introduction part, and high-frequency power is supplied from the high-frequency power source or other high-frequency power source through the electrode or the other electrode. By exciting the hydrogen gas into a hydrogen plasma state,
The hydrogen radicals in the hydrogen plasma are reacted with the Si-based products that are unnecessarily attached in the Si-based product forming container, and the unnecessary Si-based products are decomposed and vaporized to produce the S
A cleaning device inside a Si-based product manufacturing apparatus, characterized in that the inside of the Si-based product forming container is cleaned by exhausting to the outside of the i-based product forming container.
置内部の洗浄装置において、 前記材料ガス導入部と前記水素ガス導入部とを統合した
ことを特徴とするＳｉ系生成物製造装置内部の洗浄装
置。3. The cleaning apparatus for the inside of the Si-based product manufacturing apparatus according to claim 2, wherein the material gas introduction unit and the hydrogen gas introduction unit are integrated. Cleaning equipment.
置内部の洗浄装置において、 前記Ｓｉ系生成物形成容器内の複数箇所に電極を配設
し、不要なＳｉ系生成物を除去する際には、これら複数
の電極を介して前記Ｓｉ系生成物形成容器内の複数箇所
に高周波電力を供給するように構成したことを特徴とす
るＳｉ系生成物製造装置内部の洗浄装置。4. The cleaning device inside the Si-based product manufacturing apparatus according to claim 2, wherein electrodes are arranged at a plurality of locations in the Si-based product forming container to remove unnecessary Si-based products. In this case, the cleaning device for the inside of the Si-based product manufacturing apparatus is characterized in that high-frequency power is supplied to a plurality of locations in the Si-based product formation container via the plurality of electrodes.
置内部の洗浄装置において、 前記複数の電極に対してそれぞれ個別の高周波電源から
高周波電力を供給するように構成したことを特徴とする
Ｓｉ系生成物製造装置内部の洗浄装置。5. The cleaning device inside the Si-based product manufacturing apparatus according to claim 4, wherein high frequency power is supplied to each of the plurality of electrodes from a separate high frequency power source. A cleaning device inside the Si-based product manufacturing device.
置内部の洗浄装置において、 前記Ｓｉ系生成物形成容器と前記真空ポンプとの間の排
気配管内又はその他の部位内にも電極を設け、この電極
を介して前記高周波電源又はその他の高周波電源から前
記排気配管内又はその他の部位内にも高周波電力を供給
するよう構成したことを特徴とするＳｉ系生成物製造装
置内部の洗浄装置。6. The cleaning device inside the Si-based product manufacturing apparatus according to claim 2, wherein an electrode is also provided in an exhaust pipe between the Si-based product forming container and the vacuum pump or in another portion. A cleaning device for the inside of the Si-based product manufacturing apparatus, characterized in that high-frequency power is provided from the high-frequency power supply or other high-frequency power supply to the exhaust pipe or other parts through this electrode. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19126198A JP3426972B2 (en) | 1998-07-07 | 1998-07-07 | Method and apparatus for cleaning inside Si-based product manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19126198A JP3426972B2 (en) | 1998-07-07 | 1998-07-07 | Method and apparatus for cleaning inside Si-based product manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000021836A JP2000021836A (en) | 2000-01-21 |
| JP3426972B2 true JP3426972B2 (en) | 2003-07-14 |
Family
ID=16271603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19126198A Expired - Fee Related JP3426972B2 (en) | 1998-07-07 | 1998-07-07 | Method and apparatus for cleaning inside Si-based product manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3426972B2 (en) |
-
1998
- 1998-07-07 JP JP19126198A patent/JP3426972B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000021836A (en) | 2000-01-21 |
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