JP3413888B2 - Method of forming oxide thin film - Google Patents
Method of forming oxide thin filmInfo
- Publication number
- JP3413888B2 JP3413888B2 JP19085493A JP19085493A JP3413888B2 JP 3413888 B2 JP3413888 B2 JP 3413888B2 JP 19085493 A JP19085493 A JP 19085493A JP 19085493 A JP19085493 A JP 19085493A JP 3413888 B2 JP3413888 B2 JP 3413888B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film
- oxide
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、酸化物薄膜の成膜方法
に関する。より詳細には、表面の平坦性、結晶性に優れ
た酸化物薄膜が成膜でき、絶縁特性の向上を図る酸化物
薄膜の成膜方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an oxide thin film. More specifically, the present invention relates to a method for forming an oxide thin film capable of forming an oxide thin film having excellent surface flatness and crystallinity and improving insulating properties.
【０００２】[0002]
【従来の技術】酸化物薄膜は、従来より半導体技術の分
野において絶縁層、保護層等としてひろく使用されてき
た。近年、研究が進められている酸化物超電導体を使用
した超電導素子においても、酸化物薄膜は絶縁層、障壁
層等に使用されることがある。超電導素子に使用される
酸化物薄膜は、絶縁膜を介しての超電導粒子の相互作
用、あるいは高電圧の印加が求められるので半導体素子
に使用されるものよりも均一性、結晶性、表面の平坦性
等に高い品質が要求される。2. Description of the Related Art Oxide thin films have hitherto been widely used as insulating layers, protective layers, etc. in the field of semiconductor technology. Even in a superconducting element using an oxide superconductor, which has been studied in recent years, the oxide thin film may be used as an insulating layer, a barrier layer, or the like. Oxide thin films used for superconducting devices are required to interact with superconducting particles through an insulating film or to apply a high voltage, so they are more uniform, more crystalline, and flatter than those used for semiconductor devices. High quality is required for the quality.
【０００３】従来、超電導素子に使用される酸化物薄膜
は、レーザ蒸着法で成膜されることが多かった。レーザ
蒸着法では、高い成膜速度で成膜が可能で、ターゲット
の組成にほぼ等しい組成の薄膜を成膜することが可能で
ある。しかしながら、成膜された薄膜の表面が荒れやす
く、均一な結晶性の薄膜を成膜することが難しい。その
ため、必要な耐圧を得るためには膜厚を大きくしなけれ
ばならない。さらに、成膜時に薄膜の組成を調整、変更
することは難しい。従って、従来のレーザ蒸着法による
成膜では、絶縁特性のよい薄膜を得ることは困難であっ
た。Conventionally, oxide thin films used for superconducting elements have often been formed by laser vapor deposition. With the laser deposition method, it is possible to form a film at a high film formation rate, and it is possible to form a thin film having a composition almost equal to that of the target. However, the surface of the formed thin film is easily roughened, and it is difficult to form a thin film having uniform crystallinity. Therefore, the film thickness must be increased to obtain the required breakdown voltage. Furthermore, it is difficult to adjust or change the composition of the thin film during film formation. Therefore, it has been difficult to obtain a thin film having good insulating properties by the conventional film formation by the laser vapor deposition method.
【０００４】[0004]
【発明が解決しようとする課題】本発明の目的は従来技
術の問題点を解決して、結晶性、表面平滑性の優れた酸
化物薄膜が成膜可能で、絶縁特性の向上を図る方法を提
供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the prior art by forming a thin oxide film having excellent crystallinity and surface smoothness, and improving the insulating property. To provide.
【０００５】[0005]
【課題を解決するための手段】本発明に従うと、基板上
に酸化物薄膜を成膜する方法において、高真空に排気可
能なチャンバ内に、基板を加熱可能に収容し、該基板を
所定の温度に加熱して該基板の近傍にＯ3 を含むＯ2 を
供給し、前記チャンバ内で基板に対向して配置した複数
のＫセル蒸着源から、前記酸化物の酸素以外の成分元素
を個別に供給して成膜を行うことを特徴とする酸化物薄
膜の成膜方法が提供される。According to the present invention, in a method for forming an oxide thin film on a substrate, the substrate is housed in a chamber that can be evacuated to a high vacuum so that it can be heated, and the substrate is heated to a predetermined size. and heated to a temperature to supply O 2 including O 3 in the vicinity of the substrate, a plurality of K cells deposition source which is disposed to face the substrate in the chamber, separate constituent elements other than oxygen in the oxide There is provided a method for forming an oxide thin film, characterized in that the film is formed by supplying the oxide film to the film.
【０００６】本発明の方法においては、前記チャンバ内
のバックグランド圧力が、１×10-9〜１×10-11 Torrで
あり、前記基板近傍での前記Ｏ3 を含むＯ2 の圧力が１
×10-5〜１×10-6Torrであることが好ましい。また、本
発明の方法では、成膜時の基板温度が 330〜530 ℃の範
囲であることが好ましく、特に430 ℃が好ましい。ま
た、本発明の方法は、特に、酸化物の絶縁体の薄膜、特
にSrTiＯ3の成膜に使用することが好ましい。In the method of the present invention, the background pressure in the chamber is 1 × 10 −9 to 1 × 10 −11 Torr, and the pressure of O 2 including O 3 in the vicinity of the substrate is 1.
It is preferably x10 -5 to 1 x 10 -6 Torr. Further, in the method of the present invention, the substrate temperature during film formation is preferably in the range of 330 to 530 ° C, particularly preferably 430 ° C. Further, the method of the present invention is particularly preferably used for forming a thin film of an oxide insulator, particularly SrTiO 3 .
【０００７】[0007]
【作用】本発明の方法では、いわゆる反応性蒸着法によ
り酸化物薄膜の成膜を行う。反応性蒸着法とは、真空蒸
着法、特にＭＢＥ法に近い方法であり、真空チャンバ内
でクヌードセンセル（以下Ｋセルと記す）等の蒸発源か
ら供給した成分元素と、気体として供給した成分元素と
を基板表面近傍で反応させて、基板に薄膜を成長させる
方法である。特に本発明においては、クヌードセンセル
蒸発源から酸素以外の成分元素を供給し、基板近傍に供
給した酸化ガスと基板表面近傍で反応させて基板上に酸
化物薄膜を成膜する。In the method of the present invention, an oxide thin film is formed by the so-called reactive vapor deposition method. The reactive vapor deposition method is a method similar to a vacuum vapor deposition method, particularly an MBE method, and is supplied as a gas together with a component element supplied from an evaporation source such as a Knudsen cell (hereinafter referred to as K cell) in a vacuum chamber. This is a method in which a thin film is grown on a substrate by reacting with a component element in the vicinity of the substrate surface. Particularly, in the present invention, a constituent element other than oxygen is supplied from the Knudsen cell evaporation source and reacted with the oxidizing gas supplied in the vicinity of the substrate in the vicinity of the substrate surface to form an oxide thin film on the substrate.
【０００８】本発明の方法では、上記の酸化ガスにはＯ
3 を含むＯ2 を使用する。Ｏ2 のみでは酸化性が低いか
らである。Ｏ3 は２〜70体積％の範囲で含まれることが
好ましい。また、本発明の方法では、真空チャンバ内の
バックグランドの圧力は、チャンバ内の汚染防止等から
１×10-9〜１×10-11 Torr程度の圧力とすることが好ま
しく、基板近傍のＯ3 を含むＯ2 の圧力は、十分な反応
のために１×10-5〜１×10-6Torr程度の圧力とすること
が好ましい。In the method of the present invention, the oxidizing gas is O
O 2 containing 3 is used. This is because the oxidizability is low only with O 2 . O 3 is preferably contained in the range of 2 to 70% by volume. Further, in the method of the present invention, the background pressure in the vacuum chamber is preferably about 1 × 10 −9 to 1 × 10 −11 Torr in order to prevent contamination in the chamber and the like. The pressure of O 2 containing 3 is preferably about 1 × 10 −5 to 1 × 10 −6 Torr for sufficient reaction.
【０００９】以下、本発明を実施例によりさらに詳しく
説明するが、以下の開示は本発明の単なる実施例に過ぎ
ず、本発明の技術的範囲をなんら制限するものではな
い。Hereinafter, the present invention will be described in more detail with reference to examples, but the following disclosure is merely examples of the present invention and does not limit the technical scope of the present invention.
【００１０】[0010]
【実施例】本発明の方法で、0.05重量％のNbを添加した
SrTiＯ3（１００）基板上にSrTiＯ3薄膜を成膜した。図
１に、本実施例で使用した本発明の方法を実現する装置
の概略図を示す。図１の装置は、それぞれ独立した排気
装置に接続された排気口11および12を備え、内部を高真
空に排気可能な真空チャンバ１と、真空チャンバ１の底
部に備えられたＫセル21および22と、真空チャンバ１の
上部に配置された基板ホルダ３とを備える。基板ホルダ
３は、基板10をＫセル21および22に対向して固定可能で
あり、基板10を加熱するヒータ４と温度センサ（不図
示）を内蔵している。また、Ｋセル21および22は、それ
ぞれ独立に供給量を調整可能に構成されている。EXAMPLE In the method of the present invention, 0.05% by weight of Nb was added.
Was deposited SrTiO 3 thin film SrTiO 3 (100) substrate. FIG. 1 shows a schematic view of an apparatus for implementing the method of the present invention used in this example. The apparatus of FIG. 1 has exhaust ports 11 and 12 connected to independent exhaust systems, respectively, and a vacuum chamber 1 capable of evacuating the interior to a high vacuum, and K cells 21 and 22 provided at the bottom of the vacuum chamber 1. And a substrate holder 3 arranged above the vacuum chamber 1. The substrate holder 3 can fix the substrate 10 so as to face the K cells 21 and 22, and incorporates a heater 4 for heating the substrate 10 and a temperature sensor (not shown). Further, the K cells 21 and 22 are configured so that the supply amount can be adjusted independently.
【００１１】さらに、上記の装置には、基板10近傍に酸
化ガス（Ｏ3 を含むＯ2 ）を供給するガス供給管６と、
成膜中の薄膜の表面状態を解析するためのＲＨＥＥＤ
（反射高速電子線回折）装置５と、各Ｋセルから供給さ
れる蒸発源の供給量および基板10上に堆積した薄膜の厚
さのモニタ７とが備えられている。また、チャンバ１の
内部には、基板10の近傍とＫセル21、22の近傍の圧力差
を設けるための隔壁８が設けられている。Furthermore, in the above apparatus, the gas supply pipe 6 for supplying (O 2 including O 3) substrate 10 near the oxidizing gas,
RHEED for analyzing surface condition of thin film during film formation
A (reflection high-energy electron beam diffraction) device 5 and a monitor 7 for the amount of evaporation source supplied from each K cell and the thickness of the thin film deposited on the substrate 10 are provided. Further, inside the chamber 1, a partition wall 8 for providing a pressure difference between the vicinity of the substrate 10 and the vicinity of the K cells 21, 22 is provided.
【００１２】本実施例では、純度３ＮのSrおよび純度５
ＮのTiをそれぞれ別のTa製るつぼに入れ、Ｋセル21およ
び22にセットした。0.05重量％のNbを添加したSrTiＯ3
（１００）基板を基板ホルダ４に取り付け、チャンバ１
内を１×10-10 Torrまで排気した。Ｏ3 を８体積％含む
Ｏ2 を基板10の近傍に供給し、基板10を含むチャンバ１
内の隔壁８から上の部分の圧力を３×10-5Torrとした。
SrのＫセルを 520℃、TiのＫセルを1500℃、基板10を 2
80〜680 ℃の範囲の所定の温度まで加熱して成膜を行っ
た。成膜速度は 1.2nm／分であった。In this embodiment, Sr having a purity of 3N and a purity of 5 are used.
N Ti was placed in different Ta crucibles and set in K cells 21 and 22. SrTiO 3 with 0.05% by weight Nb
The (100) substrate is attached to the substrate holder 4, and the chamber 1
The inside was evacuated to 1 × 10 -10 Torr. O 2 containing 8% by volume of O 3 is supplied to the vicinity of the substrate 10 to form a chamber 1 containing the substrate 10.
The pressure in the portion above the inner partition wall 8 was 3 × 10 −5 Torr.
Sr K cell is 520 ℃, Ti K cell is 1500 ℃, substrate 10 is 2
The film was formed by heating to a predetermined temperature in the range of 80 to 680 ° C. The film formation rate was 1.2 nm / min.
【００１３】上記本発明の方法では、それぞれのＫセル
の温度により、それぞれの蒸発源から蒸発する量を変化
させて成膜速度を変更する。一方、基板温度は薄膜の結
晶性に影響し、特に基板温度が低い場合には結晶性が保
てなくなる。さらに、酸化物の酸素含有量は成膜時の酸
化ガスの圧力に依存する。また、薄膜の組成は、各蒸発
源からの蒸着量の比に依存している。従って、本発明の
方法では、上記のパラメータを変更することにより、薄
膜の組成を成膜時に調整可能であり、これにより薄膜の
特性を変更することができる。In the method of the present invention, the film formation rate is changed by changing the amount of evaporation from each evaporation source depending on the temperature of each K cell. On the other hand, the substrate temperature affects the crystallinity of the thin film, and the crystallinity cannot be maintained especially when the substrate temperature is low. Furthermore, the oxygen content of the oxide depends on the pressure of the oxidizing gas during film formation. Further, the composition of the thin film depends on the ratio of the vapor deposition amount from each evaporation source. Therefore, in the method of the present invention, the composition of the thin film can be adjusted at the time of film formation by changing the above parameters, and thus the characteristics of the thin film can be changed.
【００１４】上記本実施例により、成膜したSrTiＯ3薄
膜の各特性を評価した。ＲＨＥＥＤによる観測では、基
板温度 300℃以上で結晶性のよい薄膜が成膜できること
がわかった。図３(a)〜(d)にそれぞれ基板温度 280、 3
30、 530および 680℃で成膜したSrTiＯ3薄膜のＲＨＥ
ＥＤ像を示す。さらに、比誘電率の測定から本発明の方
法で330〜 530℃の基板温度で成膜されたSrTiＯ3薄膜
は、20Ｋでの比誘電率が300程度の優れた絶縁特性を有
し、特に基板温度 430℃で成膜されたSrTiＯ3薄膜の比
誘電率が最大となることがわかった。比誘電率と成膜温
度との関係を図２のグラフに示す。図２には、それぞれ
のSrTiＯ3薄膜の比誘電率を室温と20Ｋで測定した結果
が示されている。さらに、原子間力顕微鏡（ＡＦＭ）に
よる観察によれば、本発明の方法で330 〜 530℃の基板
温度で成膜したSrTiＯ3薄膜の表面は５nm以下の平坦性
を有することがわかった。また、The characteristics of the SrTiO 3 thin film thus formed were evaluated in accordance with the present embodiment. Observation by RHEED revealed that a thin film with good crystallinity can be formed at a substrate temperature of 300 ° C or higher. Substrate temperatures of 280 and 3 are shown in Figs.
RHE of SrTiO 3 thin films deposited at 30, 530 and 680 ℃
An ED image is shown. Furthermore, from the measurement of the relative dielectric constant, the SrTiO 3 thin film formed by the method of the present invention at a substrate temperature of 330 to 530 ° C. has excellent insulating properties with a relative dielectric constant of about 300 at 20 K, It was found that the SrTiO 3 thin film formed at a temperature of 430 ° C. has the maximum relative dielectric constant. The relationship between the relative dielectric constant and the film forming temperature is shown in the graph of FIG. FIG. 2 shows the results of measuring the relative permittivity of each SrTiO 3 thin film at room temperature and 20K. Further, observation by an atomic force microscope (AFM) revealed that the surface of the SrTiO 3 thin film formed by the method of the present invention at a substrate temperature of 330 to 530 ° C. has a flatness of 5 nm or less. Also,
【００１５】本発明の方法によれば、ＳｒＴｉＯ３薄膜
の組成を変更して、半導体特性としたり、絶縁体特性と
することも可能である。また、例えば、Ｙ−Ｂａ−Ｃｕ
−Ｏ系酸化物超電導薄膜に連続してｉｎ ｓｉｔｕの成
膜を行うことも可能である。本実施例では、ＳｒＴｉＯ
３薄膜について説明を行ったが、本発明の方法は、Ｓｒ
ＴｉＯ３以外にも酸化物に広く適用することができる。According to the method of the present invention, it is possible to change the composition of the SrTiO 3 thin film to have semiconductor characteristics or insulator characteristics. Also, for example, Y-Ba-Cu
It is also possible to continuously form an in-situ film on the -O-based oxide superconducting thin film. In this embodiment, SrTiO 3
Although three thin films have been described, the method of the present invention uses Sr
It can be widely applied to oxides other than TiO 3 .
【００１６】[0016]
【発明の効果】本発明の方法を用いることによって、結
晶性、絶縁特性が優れた酸化物薄膜を成膜することがで
きる。従って、本発明の方法を、各種素子、特に酸化物
超電導体を使用した超電導素子の作製に応用すると効果
的である。特に、極薄の酸化物超電導薄膜で構成された
超電導チャネルと、この超電導チャネル上に形成された
ゲート絶縁層と、ゲート絶縁層上に形成されたゲート電
極とを有する超電導電界効果型素子のゲート絶縁層の作
製に応用すると有利である。また、酸化物超電導薄膜に
よる超電導電極と、その上に積層された障壁層と、さら
にその上に積層された酸化物超電導薄膜による超電導電
極とを備えるトンネル型ジョセフソン素子の障壁層の形
成にも有利に適用できる。By using the method of the present invention, an oxide thin film having excellent crystallinity and insulating properties can be formed. Therefore, it is effective to apply the method of the present invention to the production of various devices, particularly superconducting devices using oxide superconductors. In particular, a gate of a superconducting field effect device having a superconducting channel composed of an ultrathin oxide superconducting thin film, a gate insulating layer formed on the superconducting channel, and a gate electrode formed on the gate insulating layer. It is advantageous to apply it to the production of an insulating layer. Also, for forming a barrier layer of a tunnel-type Josephson device including a superconducting electrode made of an oxide superconducting thin film, a barrier layer laminated thereon, and a superconducting electrode made of an oxide superconducting thin film further laminated thereon. It can be applied to advantage.
【図１】本発明の方法を実施するのに使用する装置の一
例の概略図である。FIG. 1 is a schematic diagram of an example of an apparatus used to carry out the method of the present invention.
【図２】本発明の方法により成膜されたSrTiＯ3薄膜
の、成膜温度と比誘電率との関係を示すグラフである。FIG. 2 is a graph showing the relationship between the film forming temperature and the relative dielectric constant of the SrTiO 3 thin film formed by the method of the present invention.
【図３】(a)〜(d)は、それぞれ基板温度280、330、530
および680℃で成膜したSrTiＯ3薄膜のＲＨＥＥＤ（反射
高速電子線回折）写真である。3A to 3D show substrate temperatures 280, 330, and 530, respectively.
3 is a RHEED (reflection high energy electron diffraction) photograph of SrTiO 3 thin films formed at 680 ° C.
１ 真空チャンバ ３ 基板ホルダ ４ ヒータ ５ ＲＨＥＥＤ ６ ガス供給管 ７ 膜厚モニタ 10 基板 11、12 排気口 21、22 Ｋセル 1 vacuum chamber 3 substrate holder 4 heater 5 RHEED 6 gas supply pipe 7 Film thickness monitor 10 board 11, 12 exhaust port 21, 22 K cell
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−97402（ＪＰ，Ａ) 特開 平１−290758（ＪＰ，Ａ) 特開 平４−183850（ＪＰ，Ａ) 特開 平４−32279（ＪＰ，Ａ) 特表 平４−500198（ＪＰ，Ａ) 堂山昌男 外１名編，材料テクノロジ ー９ 材料のプロセス技術［Ｉ］，日 本，東京大学出版会，1987年11月30日, 初版，Ｐ159−163 金原 あきら，薄膜の基本技術，日 本，東京大学出版会，1987年 ９月25 日，第２版，Ｐ52−53 (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 C30B 29/16 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-2-97402 (JP, A) JP-A-1-290758 (JP, A) JP-A-4-183850 (JP, A) JP-A-4- 32279 (JP, A) Tokumei Hira 4-500198 (JP, A) Masao Doyama, First Edition, Material Technology 9 Material Process Technology [I], Japan, The University of Tokyo Press, November 30, 1987 , First edition, P159-163 Akira Kanehara, Basic technology of thin film, Japan, The University of Tokyo Press, September 25, 1987, Second edition, P52-53 (58) Fields investigated (Int.Cl. 7 , DB Name) C23C 14/00-14/58 C30B 29/16
Claims (5)
法において、高真空に排気可能なチャンバ内に、基板を
加熱可能に収容し、該基板を３３０℃以上、５３０℃以
下に加熱して該基板の近傍にＯ３を含むＯ２ガスを供給
し、前記基板近傍での前記Ｏ３を含むＯ２ガスの圧力を
１×１０ −６ Ｔｏｒｒ以上、１×１０ −５ Ｔｏｒｒ未満
とし、前記チャンバ内で基板に対向して配置した複数の
Ｋセル蒸着源から、前記酸化物の絶縁体の酸素以外の成
分元素を個別に供給して成膜を行うことを特徴とする酸
化物薄膜の成膜方法。1. A method for forming an oxide insulator thin film on a substrate, wherein the substrate is housed in a chamber capable of being evacuated to a high vacuum so that it can be heated, and the substrate is 330 ° C. or higher and 530 ° C. or higher.
The substrate is heated downward to supply O 2 gas containing O 3 to the vicinity of the substrate, and the pressure of the O 2 gas containing O 3 in the vicinity of the substrate is controlled.
1 × 10 −6 Torr or more and less than 1 × 10 −5 Torr
The oxide film is characterized in that the constituent elements other than oxygen of the oxide insulator are individually supplied from a plurality of K cell vapor deposition sources arranged facing the substrate in the chamber to form a film. Thin film forming method.
が、１×１０ −１１ Ｔｏｒｒ以上、１×１０ −９ Ｔｏｒ
ｒ以下であることを特徴とする請求項１に記載された方
法。2. A background pressure in the chamber is, 1 × 10 -11 Torr or more, 1 × 10 -9 Tor
The method according to claim 1, wherein r is less than or equal to r .
ることを特徴とする請求項１または２に記載された方
法。3. The method according to claim 1, wherein the oxide insulator is SrTiO 3 .
２体積％以上、７０体積％以下の範囲で含まれることを
特徴とする請求項１から請求項３までのいずれか１項に
記載された方法。4. The O 2 gas containing O 3, is O 3
The method according to any one of claims 1 to 3, wherein the method is contained in the range of 2% by volume or more and 70% by volume or less .
とを特徴とする請求項１から請求項４までのいずれか１
項に記載された方法。5. The one of the preceding claims, characterized in that the substrate temperature during the film formation is 430 ° C. to claim 4 1
The method described in section.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19085493A JP3413888B2 (en) | 1993-07-02 | 1993-07-02 | Method of forming oxide thin film |
| DE69422666T DE69422666T2 (en) | 1993-07-02 | 1994-07-01 | Process for the production of a highly crystalline, thin SrTiO3 oxide film |
| EP94401516A EP0633331B1 (en) | 1993-07-02 | 1994-07-01 | Process for preparing high crystallinity SrTiO3 oxide thin film |
| US08/269,777 US5501175A (en) | 1993-07-02 | 1994-07-01 | Process for preparing high crystallinity oxide thin film |
| CA002127323A CA2127323C (en) | 1993-07-02 | 1994-07-04 | Process for preparing high crystallinity oxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19085493A JP3413888B2 (en) | 1993-07-02 | 1993-07-02 | Method of forming oxide thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0718417A JPH0718417A (en) | 1995-01-20 |
| JP3413888B2 true JP3413888B2 (en) | 2003-06-09 |
Family
ID=16264884
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19085493A Expired - Fee Related JP3413888B2 (en) | 1993-07-02 | 1993-07-02 | Method of forming oxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3413888B2 (en) |
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|---|---|---|---|---|
| CN105051242A (en) * | 2013-02-25 | 2015-11-11 | 应用材料公司 | Deposition apparatus with gas supply and method for depositing material |
-
1993
- 1993-07-02 JP JP19085493A patent/JP3413888B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| 堂山昌男 外１名編，材料テクノロジー９ 材料のプロセス技術［Ｉ］，日本，東京大学出版会，１９８７年１１月３０日，初版，Ｐ１５９−１６３ |
| 金原 あきら，薄膜の基本技術，日本，東京大学出版会，１９８７年 ９月２５日，第２版，Ｐ５２−５３ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0718417A (en) | 1995-01-20 |
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