JP3413264B2 - Backscattered electron detector - Google Patents
Backscattered electron detectorInfo
- Publication number
- JP3413264B2 JP3413264B2 JP33529293A JP33529293A JP3413264B2 JP 3413264 B2 JP3413264 B2 JP 3413264B2 JP 33529293 A JP33529293 A JP 33529293A JP 33529293 A JP33529293 A JP 33529293A JP 3413264 B2 JP3413264 B2 JP 3413264B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- backscattered electron
- backscattered
- light
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010894 electron beam technology Methods 0.000 claims description 33
- 230000005540 biological transmission Effects 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Description
【０００１】[0001]
【産業上の利用分野】本発明は、反射電子検出装置に係
り、特に電子線を照射した試料からの反射電子を受感面
に受け、光を出力する反射電子受感部と、光を電子に変
換して増幅する光電子増倍管と、上記反射電子受感部と
光電子増倍管とが取り付けられ、反射電子受感部からの
光を光電子増倍管に導く導光部とを備えた電子線装置の
反射電子検出器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a backscattered electron detector, and more particularly to a backscattered electron sensing section for receiving backscattered electrons from a sample irradiated with an electron beam on a sensing surface and outputting light, and a backscattered electron sensing section. A photomultiplier tube for converting to and amplifying the photoelectron multiplier, and a light guide section to which the above-mentioned backscattered electron sensing section and photomultiplier tube are attached and which guides light from the backscattered electron sensing section to the photomultiplier tube. The present invention relates to a backscattered electron detector of an electron beam device.
【０００２】[0002]
【従来の技術】従来の電子顕微鏡等の電子線装置の反射
電子検出器としては、蛍光体またはプラスチックシンチ
レータを利用したタイプと、半導体を用いたタイプとが
あり、シンチレータを利用したタイプ、即ち上述したタ
イプのものとしては図５に示したものがある（特開平４
−２４９８４３号公報参照）。2. Description of the Related Art As a backscattered electron detector of an electron beam apparatus such as a conventional electron microscope, there are a type using a phosphor or a plastic scintillator and a type using a semiconductor. A type using a scintillator, that is, the above-mentioned type. One of the types shown in FIG. 5 is shown in FIG.
(See JP-A-249843).
【０００３】これは、上方に対物レンズ３を設けた電子
顕微鏡の試料室１に試料４を配置し、導光部である本体
の一端部に光電子増倍管８及び増幅器９が接続され、電
子線透過孔６ａが形成されると共に、反射電子受感部と
したシンチレータ６を配置したものである。このような
反射電子検出装置では、反射電子５のうち、光電子増倍
管と反対方向でシンチレータに検出されたものは、透過
孔で遮断され、光電子増倍管までの光路が複雑なため、
光は、光電子増倍管に到達しにくいものとなり、反射電
子の検出効率が低いものとなる。The sample 4 is placed in a sample chamber 1 of an electron microscope having an objective lens 3 provided above, and a photomultiplier tube 8 and an amplifier 9 are connected to one end of a main body which is a light guide section. The line transmission hole 6a is formed, and the scintillator 6 serving as a backscattered electron sensing portion is arranged. In such a backscattered electron detection device, among the backscattered electrons 5, those detected by the scintillator in the direction opposite to the photomultiplier tube are blocked by the transmission hole, and the optical path to the photomultiplier tube is complicated,
It becomes difficult for light to reach the photomultiplier tube, resulting in low detection efficiency of backscattered electrons.
【０００４】係る点に着目して、本願出願人は、次のよ
うな反射電子検出装置を提案している（特開平４−２４
９８４３号公報参照）。これは、図６に示すように、光
電子増倍管８、増幅器９を有し、透明体である導光部で
形成されると共に、反射電子受感部である２つのシンチ
レータ７，７を設け、これらのシンチレータの先端に電
子線通過用の切欠部を設けると共に、これらの先端を近
接して配置し、２つのシンチレータ７，７の間に電子線
を透過させ、試料からの反射電子を２つのシンチレータ
７，７で効率よく検出するものである。With this in mind, the applicant of the present application has proposed the following backscattered electron detection device (Japanese Patent Laid-Open No. 4-24).
9843). As shown in FIG. 6, this has a photomultiplier tube 8 and an amplifier 9, and is formed by a light guide section which is a transparent body, and two scintillators 7, 7 which are backscattered electron sensing sections are provided. , A notch for passing an electron beam is provided at the tip of each of these scintillators, and these tips are arranged close to each other so that the electron beam is transmitted between the two scintillators 7, 7 and the reflected electrons from the sample are One scintillator 7, 7 is used for efficient detection.
【０００５】[0005]
【発明が解決しようとする課題】ところで上述した第２
の反射電子検出器では、シンチレータの反射電子受感部
から放出された光を電気信号に変換し増幅する光電子増
倍管や増幅器を各シンチレータに対応して個別に複数個
設けねばならず、装置が複雑となり、製造コストが多大
にかかってしまうという問題がある。The above-mentioned second problem
In the backscattered electron detector of, the photomultiplier tube and the amplifier for converting the light emitted from the backscattered electron sensing part of the scintillator into an electric signal and amplifying it must be individually provided corresponding to each scintillator, However, there is a problem in that the manufacturing cost becomes very high.
【０００６】そこで、本発明は、反射電子の検出効率を
確保しつつ、コストを低くおさえることができる反射電
子検出器を提供することを目的とする。Therefore, an object of the present invention is to provide a backscattered electron detector capable of keeping the cost low while ensuring the detection efficiency of backscattered electrons.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
の反射電子検出器としては、電子線を照射した試料から
の反射電子を受感面に受け、光を出力する反射電子受感
部と、光を電子に変換して増幅する光電子増倍管と、上
記反射電子受感部と上記光電子増倍管とが取り付けられ
上記反射電子受感部からの光を上記光電子増倍管に導く
導光部とを備えた電子線装置の反射電子検出器におい
て、上記導光部に、電子線が透過する電子線透過孔と、
この電子線透過孔を透過した電子線を挟む方向に上記受
感面を向けるとともに上記試料側に上記受感面を向けて
上記反射電子受感部を取り付けるための複数の受感部取
付面とを設け、この受感部取付面に上記電子線透過孔を
透過した電子線を挟む方向に上記受感面を向けるととも
に上記試料側に上記受感面を向ける２個以上の反射電子
受感部を設け、上記光電子増倍管を１個設け、上記導光
部を多角立体形状に形成し、この多角立体形状の表面に
上記反射電子受感部からの光を内面側へ反射して上記光
電子増倍管に導入する反射面を形成したことを特徴とす
るものである。As a backscattered electron detector for solving the above-mentioned problems, a backscattered electron sensing section for receiving backscattered electrons from a sample irradiated with an electron beam on a sensing surface and outputting light is provided. A photomultiplier tube that converts light into electrons and amplifies it; and a reflection electron sensing section and a photomultiplier tube that are attached to guide the light from the backscattered electron sensing section to the photomultiplier tube. In a backscattered electron detector of an electron beam apparatus including a light section, the light guide section, an electron beam transmission hole through which an electron beam passes,
A plurality of sensing portion mounting surfaces for mounting the backscattered electron sensing portion with the sensing surface facing the sample side and the sensing surface facing the sample side. Two or more backscattered electron-sensing portions are provided on the sensing-surface mounting surface, the sensing surface facing the electron beam passing through the electron-beam transmitting hole and the sensing surface facing the sample. Is provided, one of the photomultiplier tubes is provided, the light guide portion is formed in a polygonal three-dimensional shape, and the light from the backscattered electron sensing portion is reflected to the inner surface side on the surface of the polygonal three-dimensional shape to generate the photoelectron. It is characterized in that a reflecting surface to be introduced into the multiplier tube is formed.
【０００８】そして、本発明では、上記反射電子受感部
は、基板に蛍光体を塗布して、予め製作されたものであ
ることを特徴とすることが望ましい。Further, in the present invention, it is preferable that the backscattered electron receiving section is manufactured in advance by coating a substrate with a phosphor.
【０００９】[0009]
【作用】本発明によれば、受感部取付面に試料に向けて
取り付けられた複数の反射電子受感部により、試料から
の反射電子は効率よく光に変換され、導光部に入る。そ
して全ての光は直接または、反射部材に反射されて１個
の光電子増倍管に入射され、電気信号に変換されて増幅
される。According to the present invention, the backscattered electrons from the sample are efficiently converted into light by the plurality of backscattered electron sensing parts mounted on the sensing part mounting surface toward the sample, and enter the light guiding part. All the light is directly or reflected by the reflecting member and is incident on one photomultiplier tube, converted into an electric signal and amplified.
【００１０】従って、複数の反射電子受感部で効率よく
反射電子を検出できるし、この反射電子受感部からの光
信号を電気信号として増幅する光電子増倍管は１個でよ
く、またそれに伴い、増幅器等も１系列で足り、増幅系
を単純化できコストを低いものとすることができる。ま
た、反射電子受感部も予め定型のものを複数作成してお
くことができ、特別に検出装置本体に形成する必要はな
いから、さらにコストを低いものとすることができる。Therefore, a plurality of backscattered electron receiving sections can efficiently detect backscattered electrons, and a single photomultiplier tube for amplifying the optical signal from the backscattered electron receiving section as an electric signal is required. Accordingly, one series of amplifiers and the like is sufficient, and the amplification system can be simplified and the cost can be reduced. Further, a plurality of standard types of backscattered electron sensitizers can be prepared in advance, and it is not necessary to specially form them on the main body of the detection device, so that the cost can be further reduced.
【００１１】[0011]
【実施例】以下本発明に係る反射電子検出器の実施例を
図面に基づいて説明する。図１は本発明に係る反射電子
検出器の第１の実施例の全体構造を示す斜視図、図２は
この反射電子検出器の反射電子受感部示す斜視図であ
る。本実施例は反射電子検出器１０は、反射電子受感部
１２を円板状とし、２個設けたものである。本実施例で
は、ガラスまたは透明構成樹脂で構成された導光部１１
は、図１に示すように、その中央部に、その幅の半分程
度の奥行きまで台形状の切り欠き部１７を形成すると共
に、その切り欠き部１８の上面に電子線が透過する電子
線透過孔１９を開設している。Embodiments of the backscattered electron detector according to the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing the entire structure of a first embodiment of a backscattered electron detector according to the present invention, and FIG. 2 is a perspective view showing a backscattered electron sensing section of this backscattered electron detector. In this embodiment, the backscattered electron detector 10 has two backscattered electron sensing portions 12 in the shape of a disk. In this embodiment, the light guide portion 11 made of glass or transparent constituent resin is used.
As shown in FIG. 1, a trapezoidal notch 17 is formed in the center of the notch 17 to a depth of about half of its width, and an electron beam that transmits an electron beam is transmitted to the upper surface of the notch 18. Hole 19 is opened.
【００１２】また、本実施例では、この電子線透過孔１
９を挟んで形成され、取付時に試料に向く面を設けて，
受感部取付面１８ａ，１８ｂとし、各取付面１８ａ，１
８ｂに第１及び第２の反射電子受感部１２ａ，１２ｂを
取り付けている。尚、符号１６は光電子増倍管１５の信
号を増幅及び処理する増幅器、１７は電子線像を表示す
る表示手段であるＣＲＴを示している。Further, in this embodiment, the electron beam transmitting hole 1
It is formed by sandwiching 9 and a surface facing the sample at the time of mounting is provided,
Sensing part mounting surfaces 18a, 18b, each mounting surface 18a, 1
The first and second backscattered electron sensing portions 12a and 12b are attached to 8b. Reference numeral 16 is an amplifier for amplifying and processing the signal of the photomultiplier tube 15, and 17 is a CRT which is a display means for displaying an electron beam image.
【００１３】そして、この導光部１１の一端には、上記
反射電子受感部１２ａ，１２ｂの発した光を受け電気信
号に変換して増幅するる光電子増倍管（ＰＭＴ）１５を
接続する円筒状の接続部１４を形成し、また、他端部を
屋根状に形成して、その外面にアルミニウムを蒸着し
て、鏡１３ａ，１３ｂを形成している。この鏡１３ａ，
１３ｂは、上記第１の反射電子受感部１２ａの発した光
をそれぞれ反射して、導光部１１のうち、上記切り欠き
部１７で切り欠かれない部分１１ｄを通って上記接続部
を介して光電子増倍管に導く（図１中矢印Ａでその光路
の一例を示した）。A photomultiplier tube (PMT) 15 for converting the light emitted from the backscattered electron sensing portions 12a and 12b into an electric signal for amplification is connected to one end of the light guide portion 11. The cylindrical connection portion 14 is formed, the other end portion is formed into a roof shape, and aluminum is vapor-deposited on the outer surface thereof to form the mirrors 13a and 13b. This mirror 13a,
Reference numerals 13b respectively reflect the light emitted from the first backscattered electron sensitive section 12a, pass through the portion 11d of the light guide section 11 that is not cut out by the cutout section 17, and through the connection section. To guide the photomultiplier tube (an example of the optical path is shown by an arrow A in FIG. 1).
【００１４】ここで、本実施例において、反射電子受感
部１２は、図２に示すように、円形のガラス板１２Ａの
一面に、蛍光体１２Ｂを塗布して、蛍光体シンチレータ
としたもので、多数を一度に制作する。尚、反射電子受
感部の形状は円形に限定されることなく、四角形、その
他の多角形でもよい。Here, in the present embodiment, the backscattered electron receiving section 12 is a phosphor scintillator in which a phosphor 12B is applied to one surface of a circular glass plate 12A as shown in FIG. , Produce many at once. The shape of the backscattered electron sensitive portion is not limited to a circle, but may be a quadrangle or another polygon.
【００１５】従って、本実施例によれば、反射電子は、
２つの反射電子受感部１２ａ，１２ｂで検出されて光が
出力される。ここで、第１の反射電子受感部１２ａから
の光は、鏡１３ａ，１３ｂに反射されて、光電子増倍管
に入射し、また、第２の反射電子受感部１２ａからの光
は、直接光電子増倍管に入射するから、光電子増倍管及
び増幅系が１つであっても、２つの反射電子受感部から
の情報を漏れなく信号として取り入れることができ、低
コストで高効率の反射電子検出器とすることができる。Therefore, according to this embodiment, the reflected electrons are
Light is output after being detected by the two backscattered electron receiving sections 12a and 12b. Here, the light from the first backscattered electron sensitive section 12a is reflected by the mirrors 13a and 13b and enters the photomultiplier tube, and the light from the second backscattered electron sensitive section 12a is Since the light directly enters the photomultiplier tube, even if there is only one photomultiplier tube and one amplification system, the information from the two backscattered electron sensing sections can be taken in as a signal without omission, resulting in low cost and high efficiency. Backscattered electron detector.
【００１６】図３は本発明に係る反射電子検出装置の第
２の実施例を示す平面図である。本実施例において、反
射電子検出器２０は、反射電子受感部１２を、３個（１
２ａ，１２ｂ，１２ｃ）設けたものである。本実施例で
は、第１の実施例と同様にガラスまたは透明構成樹脂で
構成された導光部２１は、図３に示すように中央部に、
屋根状凹部である欠き部２２を形成すると共に、その切
り欠き部２２の上面に電子線が透過する電子線透過孔２
３を開設し、この電子線透過孔２３を挟んで形成され、
取付時に試料に向く面を設けて受感部取付面２２ａ，２
２ｂ、２２ｃとし、各取付面に第１乃至第３の反射電子
受感部１２ａ，１２ｂ，１２ｃを取り付けている。FIG. 3 is a plan view showing a second embodiment of the backscattered electron detector according to the present invention. In the present embodiment, the backscattered electron detector 20 includes three backscattered electron sensing sections 12 (1
2a, 12b, 12c) are provided. In this embodiment, as in the first embodiment, the light guide portion 21 made of glass or transparent constituent resin is provided at the center as shown in FIG.
An electron beam transmitting hole 2 through which an electron beam is transmitted is formed on the upper surface of the notch 22 while forming a notch 22 that is a roof-like recess.
3 is formed, and the electron beam transmission hole 23 is sandwiched between
A surface facing the sample is provided at the time of mounting, and the sensing section mounting surfaces 22a, 2
2b and 22c, and the first to third backscattered electron sensing portions 12a, 12b and 12c are mounted on the respective mounting surfaces.
【００１７】尚、符号１６は、光電子増倍管１５の信号
を増幅及び処理する増幅器、１７は電子線像を表示する
表示手段であるＣＲＴを示している。そして、この導光
部２１の１端には、上記第１の実施例と同様に光電子増
倍管（ＰＭＴ）１５を接続する円筒状の接続部１４を形
成し、また、他の２辺を、屋根状に形成して、その外面
にアルミニウムを蒸着して、鏡２４ａ，２４ｂ、２４
ｃ，２４ｄ，２４ｅを形成している。この鏡１３ａ乃
至，１３ｅは、上記第１及び第２の反射電子受感部１２
ａ，１２ｂの発した光を２回乃至３回反射して、導光部
２１のうち、上記切り欠き部２２で切り欠かれない部分
を通って上記接続部を介して光電子増倍管に導く（図１
中矢印Ｂ，Ｃでその光路の一例を示した）。Reference numeral 16 is an amplifier for amplifying and processing the signal of the photomultiplier tube 15, and 17 is a CRT which is a display means for displaying an electron beam image. Then, at one end of the light guide portion 21, a cylindrical connection portion 14 for connecting the photomultiplier tube (PMT) 15 is formed as in the first embodiment, and the other two sides are connected. , Roof-shaped, and aluminum is vapor-deposited on the outer surface thereof to form mirrors 24a, 24b, 24
c, 24d, and 24e are formed. The mirrors 13a to 13e are connected to the first and second backscattered electron sensing portions 12 described above.
The light emitted by a and 12b is reflected twice or three times, and is guided to the photomultiplier tube through the connection part through the part of the light guide part 21 not cut out by the cutout part 22. (Fig. 1
An example of the optical path is shown by the middle arrows B and C).
【００１８】従って、本実施例によれば、反射電子は、
３つの反射電子受感部１２ａ，１２ｂ，１２ｃで検出さ
れて光が出力される。ここで、第１の反射電子受感部１
２ａからの光は、例えば鏡２４ａ，２４ｂ，２４ｅに反
射されて、矢印Ｂのように、光電子増倍管に入射し、第
２の反射電子受感部１２ｂからの光は、例えば鏡２４
ｃ，２４ｄ，に反射されて、矢印Ｃのように、光電子増
倍管に入射し、さらに、第３の反射電子受感部１２ｃか
らの光は、直接光電子増倍管に入射するから、光電子増
倍管及び増幅系が１つであっても、３つの反射電子受感
部からの情報を漏れなく信号として取り入れることがで
きるから、低コストでさらに高効率の反射電子検出器と
することができる。Therefore, according to this embodiment, the reflected electrons are
Light is output after being detected by the three backscattered electron sensing units 12a, 12b, 12c. Here, the first backscattered electron sensing unit 1
The light from 2a is reflected by, for example, the mirrors 24a, 24b, and 24e and enters the photomultiplier tube as shown by an arrow B, and the light from the second backscattered electron sensing unit 12b is, for example, the mirror 24.
c, 24d, and is incident on the photomultiplier tube as shown by arrow C. Further, the light from the third backscattered electron sensing section 12c is directly incident on the photomultiplier tube. Even if there is only one multiplier and one amplification system, the information from the three backscattered electron sensing sections can be taken in as a signal without omission, so that a backscattered electron detector with lower cost and higher efficiency can be obtained. it can.
【００１９】図４は本発明に係る反射電子検出装置の第
３の実施例を示す平面図である。本実施例において、反
射電子検出器３０は、反射電子受感部１２を、４個（１
２ａ，１２ｂ，１２ｃ，１２ｄ）設けたものである。そ
して、導光部３１に図３に示すように中央部に、屋根状
凹部である切り欠き部３２を形成している。そして、こ
の切り欠き部３２の上面に電子線が透過する電子線透過
孔３３を開設し、この電子線透過孔２３を挟んで試料に
向く面を設けて受感部取付面３２ａ，３２ｂ、３２ｃ，
３２ｄとし、各取付面に第１乃至第３の反射電子受感部
１２ａ，１２ｂ，１２ｃ，１２ｄを取り付けている他、
導光部３１に反射面を屋根状に形成して、その外面にア
ルミニウムを蒸着して、鏡３４ａ，３４ｂ、３４ｃ，３
４ｄ，３４ｅ，３４ｆを形成している。この鏡３４ａ乃
至３４ｆは、上記第１、第２及び第４の反射電子受感部
１２ａ，１２ｂ、１２ｄの発した光をそれぞれ反射し
て、導光部３１のうち、上記切り欠き部２２で切り欠か
れない部分を通って上記接続部を介して光電子増倍管に
導く（図４中矢印Ｅ，Ｆ，Ｇでその光路の一例を示し
た）。また、第３の反射電子受感部１２ｃからの光は、
直接光電子増倍管１４に入射する（図４中矢印Ｈ）か
ら、更に効率は向上する。FIG. 4 is a plan view showing a third embodiment of the backscattered electron detector according to the present invention. In the present embodiment, the backscattered electron detector 30 includes four backscattered electron sensing units 12 (1
2a, 12b, 12c, 12d) are provided. Further, as shown in FIG. 3, the light guide portion 31 is provided with a notch portion 32, which is a roof-like concave portion, at the center portion. Then, an electron beam transmission hole 33 through which an electron beam is transmitted is formed on the upper surface of the cutout portion 32, and a surface facing the sample is provided with the electron beam transmission hole 23 sandwiched between the sensing portion mounting surfaces 32a, 32b, 32c. ，
32d, and the first to third backscattered electron sensing portions 12a, 12b, 12c, 12d are mounted on each mounting surface,
A reflecting surface is formed on the light guide portion 31 in a roof shape, and aluminum is vapor-deposited on the outer surface thereof to form mirrors 34a, 34b, 34c, 3
4d, 34e, 34f are formed. The mirrors 34a to 34f respectively reflect the light emitted from the first, second, and fourth backscattered electron sensing sections 12a, 12b, and 12d, and are reflected by the cutout section 22 of the light guide section 31. The light is guided to the photomultiplier tube through the above-mentioned connecting portion through the portion not cut out (an example of its optical path is shown by arrows E, F and G in FIG. 4). In addition, the light from the third backscattered electron sensing section 12c is
Since the light directly enters the photomultiplier tube 14 (arrow H in FIG. 4), the efficiency is further improved.
【００２０】尚、本発明は、上記の実施例に限定される
ことなく、電子線透過孔の回りにどのような個数、位置
で配置して差し支えないし、また鏡の位置形状も反射電
子受感部からの光を光電子増倍管に導くものであれば特
に限定されることはない。The present invention is not limited to the above embodiment, and any number and position of electron beam transmission holes may be arranged around the electron beam transmission hole, and the position and shape of the mirror may be reflected electron sensitive. There is no particular limitation as long as it guides the light from the section to the photomultiplier tube.
【００２１】[0021]
【発明の効果】以上説明したように、本発明によれば、
受感部取付面に試料に向けて取り付けられた複数の反射
電子受感部により、試料からの反射電子は効率良く光に
変換され、導光部に入る。そして全ての光は、直接また
は鏡に反射されて、１個の光電子増倍管に入射され、電
気信号に変換されて増幅されるから、複数の反射電子受
感部で効率良く反射電子を検出でき、また反射電子受感
部からの光信号を電気信号として増幅する光電子増倍管
は１個でよく、またそれに伴い増幅器等も１個の系列で
足り、増幅系を単純化でき、コストを低いものとするこ
とができるという効果を奏する。As described above, according to the present invention,
The reflected electrons from the sample are efficiently converted into light by the plurality of reflected electron receiving parts mounted on the mounting surface of the receiving part toward the sample, and enter the light guide part. All the light is directly or reflected by the mirror, is incident on one photomultiplier tube, is converted into an electric signal and is amplified, so that the backscattered electrons are efficiently detected by the plurality of backscattered electron sensing sections. In addition, only one photomultiplier tube is required to amplify the optical signal from the backscattered electron sensing section as an electric signal, and accordingly, only one series of amplifiers and the like is required, which simplifies the amplification system and reduces the cost. The effect is that it can be made low.
【００２２】また、反射電子受感部は、基板に蛍光体を
塗布して、予め製作されたものを用いることにより、検
出装置本体に対して特別に一体形成する必要がなく、予
め定型のものを複数作成しておくことができて、さらに
コストを低くすることができる。Further, the backscattered electron receiving section does not need to be specially formed integrally with the main body of the detection device by using a prefabricated one by applying a phosphor to the substrate, and a standard one is used in advance. It is possible to create a plurality of items, which further reduces the cost.
【図１】本発明に係る反射電子検出器の第１の実施例の
構造を示す斜視図である。FIG. 1 is a perspective view showing a structure of a first embodiment of a backscattered electron detector according to the present invention.
【図２】図１に示した反射電子検出器の反射電子受感部
を示す斜視図である。2 is a perspective view showing a backscattered electron sensing section of the backscattered electron detector shown in FIG. 1. FIG.
【図３】本発明に係る反射電子検出器の第２の実施例の
構造を示す平面図である。FIG. 3 is a plan view showing the structure of a second embodiment of the backscattered electron detector according to the present invention.
【図４】本発明に係る反射電子検出器の第３の実施例の
構造を示す斜視図である。FIG. 4 is a perspective view showing a structure of a backscattered electron detector according to a third embodiment of the present invention.
【図５】従来の反射電子検出器を示す図である。FIG. 5 is a diagram showing a conventional backscattered electron detector.
【図６】従来の反射電子検出器の他の例を示す図であ
る。FIG. 6 is a diagram showing another example of a conventional backscattered electron detector.
１０ 反射電子検出器 １１ 導光部 １２ 反射電子受感部 １３ａ，１３ｂ 鏡 １５ 光電子増倍管 １８ａ，１８ｂ 受感部取付面 １９ 電子線透過孔 10 Backscattered electron detector 11 Light guide 12 Reflection electron sensing unit 13a, 13b mirror 15 Photomultiplier tube 18a, 18b Sensing part mounting surface 19 Electron beam transmission hole
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−196042（ＪＰ，Ａ) 特開 平１−292282（ＪＰ，Ａ) 特開 平２−155157（ＪＰ，Ａ) 特開 平４−249843（ＪＰ，Ａ) 特開 平１−241745（ＪＰ，Ａ) 特開 昭54−140867（ＪＰ，Ａ) 実開 昭52−171260（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01J 37/244 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-4-196042 (JP, A) JP-A-1-292282 (JP, A) JP-A-2-155157 (JP, A) JP-A-4- 249843 (JP, A) JP-A 1-241745 (JP, A) JP-A 54-140867 (JP, A) Actual development 52-171260 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) H01J 37/244
Claims (2)
感面に受け、光を出力する反射電子受感部と、光を電子
に変換して増幅する光電子増倍管と、上記反射電子受感
部と上記光電子増倍管とが取り付けられ、上記反射電子
受感部からの光を上記光電子増倍管に導く導光部とを備
えた電子線装置の反射電子検出器において、上記 導光部に、電子線が透過する電子線透過孔と、この
電子線透過孔を透過した電子線を挟む方向に上記受感面
を向けるとともに上記試料側に上記受感面を向けて上記
反射電子受感部を取り付けるための複数の受感部取付面
とを設け、この 受感部取付面に上記電子線透過孔を透過した電子線
を挟む方向に上記受感面を向けるとともに上記試料側に
上記受感面を向ける２個以上の反射電子受感部を設け、 上記光電子増倍管を１個設け、 上記導光部を多角立体形状に形成し、この多角立体形状
の表面に上記反射電子受感部からの光を内面側へ反射し
て上記光電子増倍管に導入する反射面を形成したことを
特徴とする反射電子検出器。1. Received backscattered electrons from a sample irradiated with an electron beam.
A backscattered electron sensitive part that receives light on the sensitive surface and outputs light, and light
A photomultiplier tube that converts and amplifies the reflected electron
Department andthe aboveA photomultiplier tube is attached,The backscattered electron
The light from the sensing partEquipped with a light guide that leads to the electron multiplier
In the backscattered electron detector of the obtained electron beam device,the above In the light guide,An electron beam transmission hole through which an electron beam passes, and
Electron beam transmission holeSensitive surface in the direction of sandwiching the transmitted electron beam
With turningAbove sample~ sideToThe sensitive surfaceForAbove
Backscattered electronMultiple sensing surface mounting surfaces for mounting
Andthis On the sensing surface mounting surfaceElectron beam transmitted through the electron beam transmission hole
Aim the sensing surface in the direction of sandwiching the
Aim the above-mentioned feeling side2 or moreofBackscattered electronProvided, One of the above photomultiplier tubesProvided, The light guide sectionIs formed into a polygonal three-dimensional shape, and this polygonal three-dimensional shape is
Surface ofThe light from the backscattered electron sensing partTo the insideReflection
Reflection introduced into the above photomultiplier tubeForming a faceWhat you did
Characteristic backscattered electron detector.
布して、予め製作されたものであることを特徴とする請
求項１記載の反射電子検出器。2. The backscattered electron detector according to claim 1, wherein the backscattered electron receiving section is manufactured in advance by coating a substrate with a phosphor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33529293A JP3413264B2 (en) | 1993-12-28 | 1993-12-28 | Backscattered electron detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33529293A JP3413264B2 (en) | 1993-12-28 | 1993-12-28 | Backscattered electron detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07192678A JPH07192678A (en) | 1995-07-28 |
| JP3413264B2 true JP3413264B2 (en) | 2003-06-03 |
Family
ID=18286895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33529293A Expired - Fee Related JP3413264B2 (en) | 1993-12-28 | 1993-12-28 | Backscattered electron detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3413264B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2314926B (en) * | 1996-07-01 | 1999-08-25 | K E Developments Ltd | Detector devices |
| EP0917178A1 (en) * | 1997-11-17 | 1999-05-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Secondary corpuscule detector and its arrangement in a corpuscular beam apparatus |
| EP1898443B1 (en) * | 2006-09-07 | 2011-05-04 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Asymmetric annular detector |
-
1993
- 1993-12-28 JP JP33529293A patent/JP3413264B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07192678A (en) | 1995-07-28 |
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