JP3405615B2 - Insulation coated wire bonding method - Google Patents

Insulation coated wire bonding method

Info

Publication number
JP3405615B2
JP3405615B2 JP30675194A JP30675194A JP3405615B2 JP 3405615 B2 JP3405615 B2 JP 3405615B2 JP 30675194 A JP30675194 A JP 30675194A JP 30675194 A JP30675194 A JP 30675194A JP 3405615 B2 JP3405615 B2 JP 3405615B2
Authority
JP
Japan
Prior art keywords
bonding
wire
ultrasonic
khz
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP30675194A
Other languages
Japanese (ja)
Other versions
JPH08167626A (en
Inventor
法生 新田
宏平 巽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP30675194A priority Critical patent/JP3405615B2/en
Publication of JPH08167626A publication Critical patent/JPH08167626A/en
Application granted granted Critical
Publication of JP3405615B2 publication Critical patent/JP3405615B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20303—Ultrasonic frequency [f] 50 Khz=<f< 75 KHz

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 【０００１】 【産業上の利用分野】この発明は絶縁被覆ワイヤーを用
いた半導体実装に関するものである。 【０００２】 【従来の技術】集積回路素子の実装は金細線であるボン
ディングワイヤーを用いてボールボンディング法によっ
て行われるのが一般的である。ボールボンディング法
は、２点のボンディング箇所のうち、第１ボンディング
にボンディングワイヤー端に、アーク放電によって形成
した金ボールを回路チップパッドに６０ｋＨｚの超音波
で熱圧着し、第２ボンディングでは、そのままワイヤー
を同じ６０ｋＨｚの超音波で熱圧着して接合する方法で
ある。 【０００３】近年の高集積化、多ピン化によってボンデ
ィングワイヤーの間隔は狭く、ワイヤースパンは長くな
る傾向にある。その結果、モールド時にワイヤー同士接
触する危険が増し、高密度半導体実装にとってワイヤー
ボンディング法は危ぶまれてきた。直進性の良いボンデ
ィングを行うボンディング装置やボンディングワイヤー
の開発によって回避することが検討されてきたが、高密
度化の要求はさらに強くなり、対応が困難となってい
る。一方で特開平３−２７３６５３号公報のように、こ
ういった接触の危険性のある実装での使用を考慮した絶
縁被覆ワイヤーが開発されてきている。 【０００４】絶縁被覆ワイヤーは隣接するボンディング
ワイヤー間の電気的接触を回避するばかりでなく、任意
点間配線を実装部分で可能にすることが期待されてお
り、今後の高密度化する半導体集積回路実装の可能性を
広げるボンディングワイヤーである。しかしながら、従
来のボンディング装置を使用した方法では第２ボンディ
ング部分では表面に被覆された樹脂を挟んで接合させる
ので接合界面に被覆樹脂が残り、樹脂を被覆していない
ワイヤー（ベアワイヤー）に比べて接合強度が低下する
という問題がある。 【０００５】 【発明が解決しようとする課題】本発明は絶縁被覆ワイ
ヤーの第２ボンディングにおける強度をベアワイヤーと
同等に引き上げることを目的とする。 【０００６】 【課題を解決するための手段】本発明は、超音波熱圧着
で用いる周波数を従来の６０ｋＨｚを超える１２０ｋＨ
ｚ以上の周波数に引き上げて絶縁被覆ワイヤーの接合安
定性を改善する。 【０００７】 【作用】ボンディング工程における超音波熱圧着による
接合は、ＩＣパッドへの第１ボンディングとインナーリ
ードへの第２ボンディングである。絶縁被覆ワイヤーの
接合で問題となる第２ボンディング部分での代表的な接
合パラメータは表１の通りである。 【０００８】 【表１】 【０００９】本発明では、超音波熱圧着接合における超
音波の周波数を従来より高周波化して絶縁被覆ワイヤー
の接合強度を大幅に向上させる。以下に本発明を詳しく
述べる。 【００１０】絶縁被覆されていることによってボンディ
ングワイヤーの接合強度が低下するのは第２ボンディン
グ部分のみである。第１ボンディング部分はボール形成
時に高温に加熱された樹脂が昇華してしまうのでボール
には樹脂はなく、接合性に関しては通常のベアワイヤー
と同じであり、問題はない。第２ボンディング部での接
合は絶縁被覆材である樹脂を超音波振動と押し付けによ
り接合時のワイヤー変形によって破壊する工程をとる。
すなわち、ワイヤーがキャピラリーによって押し潰され
ることにより、ワイヤーの変形に追従できなくなった被
覆樹脂が破けて接合面で金−銀が露出し、接合すると考
えられる。接合時、表１における本発明の１２０ｋＨｚ
の場合のように、超音波の周波数を高くすれば接合工程
初期のワイヤーにかかる荷重が小さいうちに十分に樹脂
被覆が除去され通常ベアワイヤーの様に接合が完了す
る。 【００１１】このパラメータでのプルテストによる接合
強度は、線径３０μｍφの絶縁被覆ボンディングワイヤ
ーでは平均６ｇｆとなり、被覆していないベアワイヤー
の強度平均９ｇｆに比べて低い値となってしまう。とこ
ろが表１の本発明の場合のように、高周波化した超音波
によって接合したときは通常のワイヤーの接合と同じ強
度が得られている。 【００１２】また、被覆ワイヤーの被覆樹脂厚みは０．
１〜２μｍ程度であるが、接合強度に関しては厚みによ
る差はほとんどなく、高周波化した超音波によっても変
化は見られない。しかし、０．２μｍ以下では絶縁性に
問題が生じる危険があり、１μｍ以上では連続接合性に
問題が生じる可能性がある。本発明では０．１μｍ〜２
μｍの絶縁被覆ボンディングワイヤーのどの膜厚でも安
定してボンディングすることができる。 【００１３】 【実施例】 ［実施例１］０．５μｍ厚さに樹脂被覆した３０μｍφ
の金ボンディングワイヤーで本発明による高周波化した
超音波によるボンディングを実施した。ボンダーは自動
ボンダーを用い超音波ホーンは通常の６０ｋＨｚと１２
０ｋＨｚのホーンを使用した。ボンディングステージ温
度は２５０℃で一定とした。 【００１４】従来６０ｋＨｚの超音波周波数と、本発明
対象の今回実施した１２０ｋＨｚでは以下のように強度
の増加が見られ、本発明による接合強度の向上が認めら
れた。 超音波周波数 60kHz 120kHz 接合強度（プル） 7gf 10gf 第２ボンディング部の接合面を剥して観察した結果、６
０ｋＨｚでのボンディングでは接合面の７０％にわたっ
て樹脂が残っていたが、１２０ｋＨｚでは２０％程度の
樹脂残りであった。このことから接合超音波の高周波化
によって接合面における樹脂破壊がより効率よく行われ
ていることがわかる。 【００１５】［実施例２］ ０．５μｍ厚さに樹脂被覆した３０μｍφの金ボンディ
ングワイヤーで本発明による高周波化した超音波による
ボンディングを実施した。ボンダーは超音波周波数を６
０ｋＨｚから３００ｋＨｚまで変化させられることがで
きるマニュアルボンダーを使用した。超音波周波数と接
合強度の関係は以下の様になった。尚、ボンディングス
テージ温度は２５０℃で一定とした。 超音波周波数 60kHz 120kHz 180kHz 240kHz 300kHz 接合強度（プル） 7gf 10gf 11gf 11gf 11gf 超音波はこのボンディング条件では１８０ｋＨｚ付近で
飽和しているが、接合超音波周波数の高周波化によって
接合強度の改善ができることを確認した。 【００１６】 【発明の効果】絶縁被覆ワイヤーを従来のボンディング
ワイヤーと同様な接合強度でボンディングすることが可
能となり、高密度半導体実装に適した絶縁被覆ボンディ
ングワイヤーによる実装が高い信頼性のもと適用でき
る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor packaging using an insulation coated wire. 2. Description of the Related Art Generally, an integrated circuit element is mounted by a ball bonding method using a bonding wire which is a gold thin wire. In the ball bonding method, a gold ball formed by arc discharge is thermocompression bonded to a circuit chip pad with ultrasonic waves of 60 kHz at the bonding wire end in the first bonding out of the two bonding points. Are bonded by thermocompression bonding with the same 60 kHz ultrasonic waves. [0003] With recent high integration and multiple pins, the distance between bonding wires tends to be narrow and the wire span tends to be long. As a result, the risk of contact between wires during molding has increased, and the wire bonding method has been compromised for high-density semiconductor packaging. Although it has been studied to avoid by development of a bonding apparatus and a bonding wire that perform bonding with good straightness, the demand for higher density has become stronger and it is difficult to cope with it. On the other hand, as in Japanese Patent Application Laid-Open No. 3-273653, an insulation-coated wire has been developed in consideration of use in such a mounting with a risk of contact. Insulated coated wires are expected not only to avoid electrical contact between adjacent bonding wires, but also to enable wiring between arbitrary points in the mounting part. A bonding wire that expands the possibilities of mounting. However, in the method using the conventional bonding apparatus, since the resin coated on the surface is sandwiched and bonded at the second bonding portion, the coating resin remains at the bonding interface, compared with a wire (bare wire) that does not cover the resin. There is a problem that the bonding strength decreases. SUMMARY OF THE INVENTION An object of the present invention is to increase the strength in the second bonding of an insulating coated wire to the same level as that of a bare wire. SUMMARY OF THE INVENTION The present invention provides a frequency of 120 kH that exceeds the conventional 60 kHz frequency used in ultrasonic thermocompression bonding.
Increase the frequency to z or higher to improve the bonding stability of the insulated wire. The bonding by ultrasonic thermocompression bonding in the bonding process is the first bonding to the IC pad and the second bonding to the inner lead. Table 1 shows typical bonding parameters in the second bonding portion which is a problem in bonding of the insulating coated wire. [Table 1] In the present invention, the ultrasonic wave frequency in ultrasonic thermocompression bonding is made higher than in the prior art to greatly improve the bonding strength of the insulating coated wire. The present invention is described in detail below. The bonding strength of the bonding wire is lowered only in the second bonding portion due to the insulating coating. In the first bonding portion, since the resin heated to a high temperature is sublimated at the time of ball formation, there is no resin in the ball, and the bonding property is the same as that of a normal bare wire, and there is no problem. Bonding at the second bonding portion takes a step of breaking the resin, which is an insulation coating material, by ultrasonic deformation and pressing to deform the wire during bonding.
That is, it is considered that when the wire is crushed by the capillary, the coating resin that can no longer follow the deformation of the wire breaks, and the gold-silver is exposed at the joining surface and joined. At the time of joining, 120 kHz of the present invention in Table 1
If the frequency of the ultrasonic wave is increased as in the case of, the resin coating is sufficiently removed while the load applied to the wire at the initial stage of the bonding process is small, and the bonding is completed like a normal bare wire. The bonding strength by the pull test with this parameter is 6 gf on average for an insulation-coated bonding wire having a wire diameter of 30 μmφ, which is lower than the average strength of 9 gf for an uncoated bare wire. However, as in the case of the present invention in Table 1, the same strength as that of normal wire bonding is obtained when bonding is performed by ultrasonic waves with higher frequencies. The coating resin thickness of the coated wire is 0.
Although it is about 1 to 2 μm, there is almost no difference depending on the thickness with respect to the bonding strength, and no change is seen even by the high frequency ultrasonic waves. However, if the thickness is 0.2 μm or less, there is a risk of causing a problem in insulation, and if it is 1 μm or more, there is a possibility that a problem occurs in continuous bonding. In the present invention, 0.1 μm to 2
Stable bonding can be achieved with any film thickness of the insulation coating wire of μm. [Example 1] 30 μmφ resin-coated to a thickness of 0.5 μm
Bonding was performed with a high frequency ultrasonic wave according to the present invention using a gold bonding wire. The bonder is an automatic bonder and the ultrasonic horn is the normal 60 kHz and 12
A 0 kHz horn was used. The bonding stage temperature was constant at 250 ° C. Conventionally, at an ultrasonic frequency of 60 kHz and 120 kHz which was the subject of the present invention, the increase in strength was observed as follows, and the improvement of the bonding strength according to the present invention was recognized. Ultrasonic frequency 60kHz 120kHz Bonding strength (pull) 7gf 10gf As a result of peeling off the bonding surface of the second bonding part, 6
In the bonding at 0 kHz, the resin remained over 70% of the joint surface, but at 120 kHz, the resin remaining was about 20%. From this, it can be seen that the resin destruction at the joint surface is more efficiently performed by increasing the frequency of the joining ultrasonic wave. [Embodiment 2] A high frequency ultrasonic bonding according to the present invention was performed using a 30 μmφ gold bonding wire coated with a resin to a thickness of 0.5 μm. The bonder has an ultrasonic frequency of 6
A manual bonder that can be varied from 0 kHz to 300 kHz was used. The relationship between ultrasonic frequency and bonding strength is as follows. The bonding stage temperature was constant at 250 ° C. Ultrasonic frequency 60kHz 120kHz 180kHz 240kHz 300kHz Bonding strength (pull) 7gf 10gf 11gf 11gf 11gf The ultrasonic wave is saturated near 180kHz under this bonding condition, but it is confirmed that the bonding strength can be improved by increasing the bonding ultrasonic frequency. did. The insulating coated wire can be bonded with the same bonding strength as that of the conventional bonding wire, and mounting by the insulating coated bonding wire suitable for high-density semiconductor mounting can be applied with high reliability. it can.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−101754（ＪＰ，Ａ) 特開 昭64−48438（ＪＰ，Ａ) 特開 平５−74874（ＪＰ，Ａ) 特開 平１−184841（ＪＰ，Ａ) 特開 平６−204299（ＪＰ，Ａ) 特開 平２−112249（ＪＰ，Ａ) 特開 昭62−104127（ＪＰ，Ａ) 特開 昭63−208236（ＪＰ，Ａ) 特開 平４−267350（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 ──────────────────────────────────────────────────── ----- Continuation of the front page (56) References JP-A-2-101754 (JP, A) JP-A 64-48438 (JP, A) JP-A 5-74874 (JP, A) JP-A-1- 184841 (JP, A) JP-A-6-204299 (JP, A) JP-A-2-112249 (JP, A) JP-A 62-104127 (JP, A) JP-A 63-208236 (JP, A) JP-A-4-267350 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/60

Claims (1)

(57)【特許請求の範囲】 【請求項１】 １２０ｋＨｚ以上の超音波振動による超
音波熱圧着接合を特徴とする絶縁被覆ワイヤーのボンデ
ィング方法。(57) Ultra according Claims 1] 120 kHz or more ultrasonic vibration
A method for bonding an insulating coated wire characterized by sonic thermocompression bonding.
JP30675194A 1994-12-09 1994-12-09 Insulation coated wire bonding method Expired - Lifetime JP3405615B2 (en)

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JP30675194A JP3405615B2 (en) 1994-12-09 1994-12-09 Insulation coated wire bonding method

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Application Number Priority Date Filing Date Title
JP30675194A JP3405615B2 (en) 1994-12-09 1994-12-09 Insulation coated wire bonding method

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JPH08167626A JPH08167626A (en) 1996-06-25
JP3405615B2 true JP3405615B2 (en) 2003-05-12

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