JP3398291B2 - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JP3398291B2 JP3398291B2 JP31807996A JP31807996A JP3398291B2 JP 3398291 B2 JP3398291 B2 JP 3398291B2 JP 31807996 A JP31807996 A JP 31807996A JP 31807996 A JP31807996 A JP 31807996A JP 3398291 B2 JP3398291 B2 JP 3398291B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- conductor
- semiconductor element
- insulating substrate
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージや混成集積回路
基板等に用いられる配線基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a semiconductor element housing package for housing a semiconductor element, a hybrid integrated circuit board and the like.
【０００２】[0002]
【従来の技術】従来、配線基板、例えば半導体素子を収
容する半導体素子収納用パッケージに使用される配線基
板は、酸化アルミニウム質焼結体等のセラミックスより
成り、その上面中央部に半導体素子を収容するための凹
部を有する絶縁基体と、絶縁基体の凹部周辺から下面に
かけて導出されたタングステンやモリブデン等の高融点
金属粉末から成る配線導体とから構成されており、絶縁
基体の凹部底面に半導体素子をガラスや樹脂・ロウ材等
の接着剤により接着固定するとともにこの半導体素子の
各電極を例えばボンディングワイヤ等の電気的接続手段
を介して配線導体に電気的に接続し、しかる後、金属や
セラミックス等から成る蓋体を絶縁基体上面の凹部を塞
ぐようにしてガラスや樹脂・ロウ材等の封止材により接
合し、絶縁基体の凹部内に半導体素子を気密に収容する
ことによって製品としての半導体装置となり、配線導体
の絶縁基体下面に導出した部位を外部の電気回路基板の
配線導体に半田等の電気的接続手段を介して接続するこ
とによって、収容する半導体素子が外部電気回路基板に
電気的に接続されることとなる。2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element, is made of ceramics such as an aluminum oxide sintered body, and the semiconductor element is housed in the center of its upper surface. And a wiring conductor made of refractory metal powder such as tungsten or molybdenum, which is led out from the periphery of the recess of the insulating base to the lower surface, and a semiconductor element is formed on the bottom of the recess of the insulating base. The electrodes of the semiconductor element are electrically connected to the wiring conductors through an electrical connection means such as a bonding wire, and then the electrodes of the semiconductor element are electrically connected to each other by an adhesive such as glass, a resin or a brazing material, and then metal or ceramics is used. Of the insulating base material is joined with a sealing material such as glass, resin, or brazing material so as to cover the concave portion on the upper surface of the insulating base material. A semiconductor device as a product is obtained by hermetically accommodating a semiconductor element inside the portion, and the portion of the wiring conductor led out to the lower surface of the insulating substrate is connected to the wiring conductor of an external electric circuit board via an electrical connection means such as solder. As a result, the semiconductor element to be housed is electrically connected to the external electric circuit board.
【０００３】この従来の配線基板は、例えばセラミック
グリーンシート積層法によって製作される。具体的に
は、酸化アルミニウムや酸化珪素・酸化マグネシウム・
酸化カルシウム等のセラミック原料粉末に適当な有機バ
インダや溶剤等を添加混合して泥漿状となすとともにこ
れを従来周知のドクターブレード法を採用してシート状
とすることによって複数のセラミックグリーンシートを
得、しかる後、所定のセラミックグリーンシートに適当
な打ち抜き加工を施すとともに配線導体となる金属ペー
ストを所定パターンに印刷塗布し、最後にそれらセラミ
ックグリーンシートを所定の順に積層して生セラミック
成形体となすとともにこの生セラミック成形体を還元雰
囲気中約1600℃の高温で焼成することによって製作され
る。This conventional wiring board is manufactured, for example, by a ceramic green sheet laminating method. Specifically, aluminum oxide, silicon oxide, magnesium oxide,
A plurality of ceramic green sheets are obtained by adding and mixing an appropriate organic binder, solvent, etc. to ceramic raw material powder such as calcium oxide to form a slurry and making this into a sheet shape by adopting the conventionally known doctor blade method. After that, a predetermined ceramic green sheet is subjected to an appropriate punching process, a metal paste to be a wiring conductor is printed and applied in a predetermined pattern, and finally the ceramic green sheets are laminated in a predetermined order to form a green ceramic molded body. Along with this, the green ceramic compact is fired in a reducing atmosphere at a high temperature of about 1600 ° C.
【０００４】しかしながら、この従来の配線基板は、絶
縁基体を構成する酸化アルミニウム質焼結体等のセラミ
ックスが硬くて脆い性質を有するため、搬送工程や半導
体装置製作の自動ライン等において配線基板同士あるい
は配線基板と半導体装置製作自動ラインの一部とが激し
く衝突すると、絶縁基体に欠けや割れ・クラック等が発
生し、その結果、半導体素子を気密に収容することがで
きず、半導体素子を長期間にわたり正常且つ安定に作動
させることができなくなるという欠点を有していた。However, in this conventional wiring board, since ceramics such as an aluminum oxide sintered body forming an insulating substrate are hard and brittle, wiring boards may be connected to each other or in an automatic line of a semiconductor device manufacturing process or the like. When the wiring board and a part of the automatic semiconductor device manufacturing line collide violently, the insulating substrate is chipped, cracked, or cracked. As a result, the semiconductor element cannot be hermetically housed, and the semiconductor element cannot be stored for a long time. However, it has a drawback that it cannot operate normally and stably.
【０００５】また、前述の配線基板の製造方法によれ
ば、生セラミック成形体を焼成する際に生セラミック成
形体に不均一な焼成収縮が発生し、得られる配線基板に
反り等の変形や寸法のばらつきが発生し、その結果、半
導体素子と配線導体とを電気的に正確且つ確実に接続す
ることが困難であるという欠点を有していた。Further, according to the above-described method for manufacturing a wiring board, when the green ceramic molded body is fired, uneven firing shrinkage occurs in the green ceramic molded body, and the resulting wiring board is deformed such as warped or dimensioned. However, there is a drawback that it is difficult to electrically and accurately connect the semiconductor element and the wiring conductor.
【０００６】そこで、本願出願人は先に特願平６−2634
07において、無機絶縁物粉末を熱硬化性樹脂により結合
して成る少なくとも一枚の絶縁基板に金属粉末を熱硬化
性樹脂により結合して成る配線導体が被着されて成る配
線基板及びその製造方法を提案した。Therefore, the applicant of the present invention previously filed Japanese Patent Application No. 6-2634.
In 07, the inorganic insulating powder metal powder to at least one of the insulating substrates formed by combining with a thermosetting resin a thermosetting
A wiring board and a method of manufacturing the wiring board are proposed, in which a wiring conductor formed by bonding with a conductive resin is adhered.
【０００７】この配線基板によれば、絶縁基体となる無
機絶縁物粉末及び配線導体となる金属粉末を靭性に優れ
る熱硬化性樹脂により結合して成ることから配線基板同
士あるいは配線基板と半導体装置製作自動ラインの一部
とが激しく衝突しても絶縁基体に欠けや割れ・クラック
等が発生することは一切なくなる。[0007] According to this wiring board, the insulating substrate and comprising inorganic insulating powder and the wiring boards or wiring board and the semiconductor device fabricating metal powders as a wiring conductor from becoming bonded with a thermosetting resin excellent in toughness Even if a part of the automatic line violently collides, the insulating substrate will never be chipped, cracked or cracked.
【０００８】更にこの配線基板によれば、熱硬化性樹脂
前駆体と無機絶縁物粉末とを混合して成る前駆体シート
を準備する工程と、所定の前駆体シートに熱硬化性樹脂
前駆体と金属粉末とを混合して成る金属ペーストを所定
パターンに印刷塗布する工程と、それら前駆体シート及
び金属ペーストを熱硬化させる工程とにより製作される
ことから、焼成に伴う不均一な収縮による変形や寸法の
ばらつきが発生することはなくなる。Further, according to this wiring board, a step of preparing a precursor sheet formed by mixing a thermosetting resin precursor and an inorganic insulating powder, and a thermosetting resin precursor on a predetermined precursor sheet. Since it is manufactured by a step of printing and applying a metal paste formed by mixing with a metal powder in a predetermined pattern, and a step of thermally curing the precursor sheet and the metal paste, deformation due to uneven shrinkage due to firing and There is no dimensional variation.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、この無
機絶縁物粉末を熱硬化性樹脂により結合して成る少なく
とも一枚の絶縁基板に金属粉末を熱硬化性樹脂により結
合して成る配線導体が被着されて成る配線基板では、配
線導体を構成する金属粉末が銅や銀・金等の金属から成
るため、配線導体を構成する金属粉末が例えば銅から成
る場合、銅が酸化し易い金属であることから銅から成る
金属粉末の表面が酸化して配線導体に含有される金属粉
末同士の接触抵抗が大となり易く、その結果、内部に収
容する半導体素子を外部電気回路に効率良く電気的接続
をすることが難しくなる場合があり、また、配線導体を
構成する金属粉末が例えば銀や金から成る場合、銀や金
は酸化しにくい金属であることから配線導体に含有され
る金属粉末同士の接触抵抗が大きなものとなることはな
いものの、銀や金は貴金属であり高価であることから配
線基板が高価なものとなるため、安価な配線基板を提供
することが難しいという傾向があった。更に配線導体を
構成する金属が銀の場合、絶縁基板の表面において隣接
して複数の配線導体を設けると、銀はエレクトロマイグ
レーションを起こしやすい金属であることから、絶縁基
板の表面に設けた配線導体間に電位差があるとエレクト
ロマイグレーションを起こし、隣接する配線導体同士が
電気的に短絡してしまう場合もあった。[SUMMARY OF THE INVENTION However, the inorganic insulator powder deposition wiring conductor metal powder to at least one of the insulating substrates formed by combining a thermosetting resin formed by combining the thermosetting resin to be In such a wiring board, the metal powder forming the wiring conductor is made of a metal such as copper, silver or gold. Therefore, if the metal powder forming the wiring conductor is made of copper, for example, copper is a metal that is easily oxidized. The surface of the metal powder made of copper is oxidized to easily increase the contact resistance between the metal powders contained in the wiring conductor, and as a result, the semiconductor element housed inside is efficiently electrically connected to the external electric circuit. However, if the metal powder forming the wiring conductor is composed of silver or gold, for example, silver or gold is a metal that is difficult to oxidize, so that the metal powders contained in the wiring conductor are Although never touch resistance becomes large, the silver and gold for the wiring board because it is expensive and precious metal becomes expensive, there is a tendency that it is difficult to provide an inexpensive wiring substrate. Further, when the metal forming the wiring conductor is silver, if a plurality of wiring conductors are provided adjacent to each other on the surface of the insulating substrate, silver is a metal that easily causes electromigration. Therefore, the wiring conductor provided on the surface of the insulating substrate If there is a potential difference between them, electromigration may occur, and adjacent wiring conductors may be electrically short-circuited.
【００１０】本発明は上記事情に鑑みて案出されたもの
であり、その目的は、無機絶縁物粉末を熱硬化性樹脂に
より結合して成る絶縁基板に金属粉末を熱硬化性樹脂に
より結合して成る配線導体が被着されて成る配線基板に
ついて、電気抵抗が小さく且つ正確な配線パターン形成
が可能で半導体素子を外部電気回路に効率よく且つ安定
に接続でき、しかも安価に作製できる、半導体装置に好
適な配線基板を提供することにある。[0010] The present invention has been devised in view of the above circumstances, and its object is an inorganic insulator powder metal powder bonded with a thermosetting resin in the insulating substrate which is formed by coupling with a thermosetting resin A semiconductor device in which a wiring board formed by depositing a wiring conductor having a small thickness can form an accurate wiring pattern with low electric resistance, can efficiently and stably connect a semiconductor element to an external electric circuit , and can be manufactured at low cost. Another object of the present invention is to provide a suitable wiring board.
【００１１】[0011]
【課題を解決するための手段】本発明の配線基板は、60
乃至95重量％の無機絶縁物粉末を５乃至40重量％の熱硬
化性樹脂により結合して成る絶縁基体の表面及び内部
に、少なくとも熱硬化性樹脂を含む樹脂により金属粉末
を結合して成る配線導体が配設されて成る配線基板であ
って、前記絶縁基体の表面に配設された配線導体の金属
粉末は銅から成り、前記絶縁基体の内部に配設された配
線導体の金属粉末は表面を銀で被覆された銅もしくは銀
−銅合金から成り、前記絶縁基体の内部に配設された配
線導体は該配線導体に対して熱硬化性樹脂及び熱可塑性
樹脂をそれぞれ０．１重量％以上且つ合計で５重量％未
満含むことを特徴とするものである。The wiring board according to the present invention comprises 60
Wiring formed by bonding a metal powder with a resin containing at least a thermosetting resin to the surface and inside of an insulating substrate formed by bonding 5 to 40% by weight of an inorganic insulating powder with a thermosetting resin of 5 to 40% by weight A wiring board provided with a conductor, wherein the metal powder of the wiring conductor provided on the surface of the insulating base is copper, and the metal powder of the wiring conductor provided inside the insulating base is the surface. the silver coated copper or silver - Ri copper alloy formation, disposed inside the insulating base distribution
The wire conductor has a thermosetting resin and a thermoplastic property with respect to the wiring conductor.
0.1% by weight or more of resin and 5% by weight in total
It is characterized by fullness .
【００１２】[0012]
【００１３】更に本発明の配線基板は、前記絶縁基体の
内部に配設された配線導体に含有される金属粉末がＢＥ
Ｔ比表面積が0.1 乃至2.5 ｍ2 ／ｇである多面体形状を
有することを特徴とするものである。Further, in the wiring board of the present invention, the metal powder contained in the wiring conductor disposed inside the insulating substrate is BE.
It is characterized by having a polyhedral shape having a T specific surface area of 0.1 to 2.5 m 2 / g.
【００１４】本発明の配線基板によると、絶縁基体の表
面に配設された配線導体は、これに含まれる金属粉末が
銅から成るため、銅はエレクトロマイグレーションを起
こしにくい金属であることから、絶縁基体の表面に互い
に隣接して設けた配線導体間に電位差があってもこれら
隣接する配線導体間にエレクトロマイグレーションが発
生することはない。According to the wiring board of the present invention, since the wiring conductor disposed on the surface of the insulating base body contains copper as a metal powder, copper is a metal which is less likely to cause electromigration. Even if there is a potential difference between the wiring conductors provided adjacent to each other on the surface of the base body, electromigration does not occur between the wiring conductors adjacent to each other.
【００１５】同時に本発明の配線基板によると、絶縁基
体内部に配設された配線導体は、これに含まれる金属粉
末が表面を銀で被覆した銅あるいは銀−銅合金から成る
ことから、金属粉末として金や銀を採用する場合に比べ
て比較的安価であるとともに金属粉末の表面が酸化しに
くく、絶縁基体内部に配設された配線導体の電気抵抗が
小さなものとなる。At the same time, according to the wiring board of the present invention, since the metal powder contained in the wiring conductor disposed inside the insulating substrate is copper or silver-copper alloy whose surface is coated with silver, the metal powder is contained. As compared with the case where gold or silver is adopted, the surface of the metal powder is less likely to be oxidized as compared with the case where gold or silver is used, and the electric resistance of the wiring conductor arranged inside the insulating base becomes small.
【００１６】また本発明の配線基板によると、絶縁基体
の内部に配設された配線導体に含有される樹脂を配線導
体に対して熱硬化性樹脂及び熱可塑性樹脂をそれぞれ0.
1 重量％以上含むものとし、且つ熱硬化性樹脂と熱可塑
性樹脂との合計量が配線導体に対して５重量％未満とし
たことから、絶縁基体の内部に配設された配線導体の電
気抵抗を極めて小さいものとすることができる。Further, according to the wiring board of the present invention, the resin contained in the wiring conductor disposed inside the insulating base is made into a thermosetting resin and a thermoplastic resin respectively for the wiring conductor.
Since the total content of the thermosetting resin and the thermoplastic resin is less than 5% by weight with respect to the wiring conductor, the electrical resistance of the wiring conductor disposed inside the insulating base is It can be extremely small.
【００１７】更に本発明の配線基板によると、絶縁基体
の内部に配設された配線導体に含有される金属粉末を多
面体形状としておくと絶縁基体の内部に配設された配線
導体内部での金属粉末同士の接触が面接触となり、絶縁
基体の内部に配設された配線導体の電気抵抗を極めて小
さいものとすることができる。Further, according to the wiring board of the present invention, when the metal powder contained in the wiring conductor arranged inside the insulating base is made into a polyhedral shape, the metal inside the wiring conductor arranged inside the insulating base is formed. The powder particles come into surface contact with each other, so that the electric resistance of the wiring conductor arranged inside the insulating substrate can be made extremely small.
【００１８】更にまた本発明の配線基板によると、配線
導体に含有される多面体形状の金属粉末をＢＥＴ比表面
積が0.1 ｍ2 ／ｇ乃至2.5 ｍ2 ／ｇの範囲であるものと
したことから、絶縁基体の内部に配設された配線導体中
での金属粉末の充填密度を高密度として絶縁基体内部に
配設された配線導体の電気抵抗を更に小さいものとする
ことができる。Furthermore, according to the wiring board of the present invention, the polyhedral metal powder contained in the wiring conductor has a BET specific surface area of 0.1 m 2 / g to 2.5 m 2 / g. By making the packing density of the metal powder in the wiring conductor arranged inside the insulating substrate high, the electric resistance of the wiring conductor arranged inside the insulating substrate can be further reduced.
【００１９】[0019]
【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図１は本発明の配線基板を半導体素子
を収容する半導体素子収納用パッケージに適用した場合
を示す実施の形態の例の断面図であり、１は絶縁基体、
２は配線導体、３は半導体素子である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view of an example of an embodiment showing a case where the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element.
Reference numeral 2 is a wiring conductor, and 3 is a semiconductor element.
【００２０】絶縁基体１は、例えば酸化珪素や酸化アル
ミニウム・窒化アルミニウム・炭化珪素・チタン酸バリ
ウム・ゼオライト等の無機絶縁物粉末をエポキシ樹脂や
ポリイミド樹脂・フェノール樹脂・熱硬化性ポリフェニ
レンエーテル樹脂・ビスマレイミドトリアジン樹脂等の
熱硬化性樹脂により結合した材料から成る３枚の絶縁基
板１ａ〜１ｃを積層して成り、その上面中央部には半導
体素子３を収容するための凹部１ｄが形成されており、
この凹部１ｄの底面には半導体素子３が樹脂等の接着剤
により接着固定される。The insulating substrate 1 is made of an inorganic insulating powder such as silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, zeolite, etc., such as epoxy resin, polyimide resin, phenol resin, thermosetting polyphenylene ether resin, bis. formed by laminating three sheets of an insulating substrate 1a~1c consisting bound material with a thermosetting resin such as a maleimide triazine resin, it has a recess 1d for accommodating the semiconductor element 3 at its upper central portion ,
The semiconductor element 3 is bonded and fixed to the bottom surface of the recess 1d with an adhesive such as resin.
【００２１】絶縁基板１ａ〜１ｃに含有される無機絶縁
物粉末は、絶縁基板１ａ〜１ｃの熱膨張係数を半導体素
子３の熱膨張係数に近いものとする作用を為すとともに
絶縁基板１ａ〜１ｃに良好な熱伝導性や耐水性あるいは
所定の比誘電率等を付与する作用を為し、一方、絶縁基
板１ａ〜１ｃに含有される熱硬化性樹脂は、無機絶縁物
粉末同士を結合して絶縁基体１を所定の形状に保持する
作用を為す。The inorganic insulator powder contained in the insulating board 1a~1c are insulating substrate 1a~1c with an action to close the coefficient of thermal expansion of the insulating substrate 1a~1c to the thermal expansion coefficient of the semiconductor element 3 Has the effect of imparting good thermal conductivity, water resistance, or a predetermined dielectric constant to the
The thermosetting resin contained in the plates 1a to 1c has a function of binding the inorganic insulating powders to each other to hold the insulating substrate 1 in a predetermined shape.
【００２２】絶縁基板１ａ〜１ｃは、無機絶縁物粉末を
靭性に優れる熱硬化性樹脂により結合して成ることか
ら、配線基板同士が衝突した際等に絶縁基体１に欠けや
割れ・クラック等が発生することは一切ない。The insulating substrate 1a~1c is an inorganic insulator powder from becoming bonded with a thermosetting resin excellent in toughness, etc. in the wiring boards has collided lacks insulating base 1 and cracks, cracks It never happens.
【００２３】また、絶縁基板１ａ〜１ｃは、その中に含
有される無機絶縁物粉末の含有量が60重量％未満である
と絶縁基体１の熱膨張係数が半導体素子３の熱膨張係数
と比較して極めて大きなものとなるため、半導体素子３
が作動時に発生する熱が半導体素子３と絶縁基体１との
印加されると両者の熱膨張係数の相違に起因して大きな
熱応力が発生して半導体素子３に絶縁基体１からの剥離
や割れを発生させやすい傾向にある。一方、無機絶縁物
粉末の含有量が95重量％を超えると無機絶縁物粉末を熱
硬化性樹脂で強固に結合することが困難となる傾向にあ
る。従って、絶縁基板１ａ〜１ｃの中に含有される無機
絶縁物粉末の含有量は60乃至95重量％の範囲が好適であ
る。Further, in the insulating substrates 1a to 1c, when the content of the inorganic insulating powder contained therein is less than 60% by weight, the thermal expansion coefficient of the insulating substrate 1 is compared with that of the semiconductor element 3. The semiconductor element 3
When the heat generated during the operation is applied between the semiconductor element 3 and the insulating substrate 1, a large thermal stress is generated due to the difference in thermal expansion coefficient between the semiconductor element 3 and the insulating substrate 1, and the semiconductor element 3 is separated or cracked from the insulating substrate 1. Tends to occur. On the other hand, if the content of the inorganic insulator powder exceeds 95% by weight of inorganic insulating powder tends to be difficult to firmly bond a thermosetting resin. Therefore, the content of the inorganic insulating powder contained in the insulating substrates 1a to 1c is preferably in the range of 60 to 95% by weight.
【００２４】絶縁基体１は、これに含有される無機絶縁
物粉末が例えば酸化珪素から成り、この無機絶縁物粉末
を結合する熱硬化性樹脂が例えばエポキシ樹脂から成る
場合、粒径が0.1〜100μｍ程度の酸化珪素粉末にビスフ
ェノールＡ型エポキシ樹脂やノボラック型エポキシ樹脂
・グリシジルエステル型エポキシ樹脂等のエポキシ樹脂
及びアミン系硬化剤やイミダゾール系硬化剤・酸無水物
系硬化剤等の硬化剤等を添加混合して得たペーストを従
来周知のドクターブレード法等のシート成形法を採用し
てシート状となすことによって各絶縁基板１ａ〜１ｃと
なる複数枚の前駆体シートを得るとともに所定の前駆体
シートの各々に適当な打ち抜き加工を従来周知のパンチ
ング法を採用して施し、しかる後、これら前駆体シート
を所定の順に積層圧着するとともにこれを約80〜300℃
の温度で約10秒〜24時間加熱し熱硬化させることによっ
て製作される。The insulating substrate 1 is made of an inorganic insulator powder, for example silicon oxide which is contained in this case thermosetting resin to bind the inorganic insulating powder, for example made of epoxy resin, the particle size is 0.1~100μm Add epoxy resin such as bisphenol A type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin, etc. and amine type curing agent, imidazole type curing agent, acid anhydride type curing agent, etc. The paste obtained by mixing is formed into a sheet by adopting a conventionally known sheet forming method such as a doctor blade method to obtain a plurality of precursor sheets to be the insulating substrates 1a to 1c and a predetermined precursor sheet. A suitable punching process is applied to each of the sheets using a conventionally known punching method, and then these precursor sheets are laminated in a predetermined order. This is about 80~300 ℃ with the
It is manufactured by heating at 10 to 24 hours for heat curing.
【００２５】また絶縁基体１には、その凹部１ｄ周辺の
上面から絶縁基体１内部を通り絶縁基体１下面に導出す
る配線導体２が被着形成されている。A wiring conductor 2 is formed on the insulating base 1 so as to lead from the upper surface around the recess 1d to the lower surface of the insulating base 1 through the inside of the insulating base 1.
【００２６】配線導体２は、銅粉末や表面を銀で被覆し
た銅粉末・銀−銅合金粉末等の金属粉末を、少なくとも
エポキシ樹脂やポリイミド樹脂・フェノール樹脂・熱硬
化性ポリフェニレンエーテル樹脂・ビスマレイミドトリ
アジン樹脂等の熱硬化性樹脂を含む樹脂で結合して成
る。また、配線導体２のうち絶縁基体１の表面即ち上面
及び下面に配設された部位はこれに含有される金属粉末
が銅から成り、絶縁基体１の内部に配設された部位はこ
れに含有される金属粉末が表面を銀で被覆された銅ある
いは銀−銅合金から成る。The wiring conductor 2 is made of at least an epoxy resin, a polyimide resin, a phenol resin, a thermosetting polyphenylene ether resin, or bismaleimide, which is made of copper powder or a metal powder such as copper powder whose surface is coated with silver or silver-copper alloy powder. It is formed by bonding with a resin containing a thermosetting resin such as a triazine resin. In addition, the metal powder contained in the portion of the wiring conductor 2 provided on the surface, that is, the upper surface and the lower surface of the insulating substrate 1 is made of copper, and the portion provided inside the insulating substrate 1 is contained therein. The metal powder formed consists of copper or a silver-copper alloy whose surface is coated with silver.
【００２７】配線導体２であって絶縁基体１の凹部１ｄ
周辺上面に配設された部位は半導体素子３の電極が電気
的に接続される半導体素子接続用パッド２ａを形成して
おり、半導体素子接続用パッド２ａには半導体素子３の
電極がボンディングワイヤ４を介して電気的に接続され
る。また、絶縁基体１の下面に配設された部位は外部電
気回路基板に接続される外部接続用パッド２ｂを形成し
ており、この外部接続用パッド２ｂは外部電気回路基板
の配線導体に半田等を介して接続される。The wiring conductor 2 and the recess 1d of the insulating substrate 1
The portion provided on the peripheral upper surface forms a semiconductor element connecting pad 2a to which the electrode of the semiconductor element 3 is electrically connected, and the electrode of the semiconductor element 3 is bonded to the bonding wire 4 on the semiconductor element connecting pad 2a. Electrically connected via. Further, a portion provided on the lower surface of the insulating base 1 forms an external connection pad 2b connected to an external electric circuit board, and the external connection pad 2b is soldered to a wiring conductor of the external electric circuit board. Connected via.
【００２８】半導体素子接続用パッド２ａ及び外部接続
用パッド２ｂは、銅粉末をエポキシ樹脂等の熱硬化性樹
脂で結合して成り、これらに含有される銅粉末が半導体
素子接続用パッド２ａ及び外部接続用パッド２ｂに導電
性を付与する作用を為し、一方、熱硬化性樹脂が前記銅
粉末同士を互いに接触させた状態で結合させるとともに
半導体素子接続用パッド２ａ及び外部接続用パッド２ｂ
を絶縁基体１に被着させる作用を為す。The semiconductor element connecting pad 2a and the external connecting pad 2b are formed by bonding copper powder with a thermosetting resin such as an epoxy resin, and the copper powder contained therein is the semiconductor element connecting pad 2a and the external. The pad 2b for connection has a function of imparting conductivity, while the thermosetting resin bonds the copper powders in a state of being in contact with each other, and the pad 2a for connecting the semiconductor element and the pad 2b for external connection.
Is attached to the insulating substrate 1.
【００２９】このような半導体素子接続用パッド２ａ及
び外部接続用パッド２ｂは、これらに含有される銅がエ
レクトロマイグレーションを起こしにくいことから、隣
接する半導体素子接続用パッド２ａ間や隣接する外部接
続用パッド２ｂ間に電位差があったとしてもそれらの間
に銅のエレクトロマイグレーションによる電気的短絡が
発生することはない。The semiconductor element connection pads 2a and the external connection pads 2b as described above are used for the external connection between the adjacent semiconductor element connection pads 2a and the adjacent external connection pads 2a because the copper contained therein hardly causes electromigration. Even if there is a potential difference between the pads 2b, an electrical short circuit due to electromigration of copper does not occur between them.
【００３０】また、半導体素子接続用パッド２ａ及び外
部接続用パッド２ｂは主に半導体素子３あるいは外部電
気回路基板との電気的接続に供されるためのものであ
り、その厚みも通常10〜20μｍ程度と薄いものであるこ
とから、これらの電気抵抗がある程度高いものとなった
としても半導体素子３を外部電気回路に効率良く接続す
るための大きな障害とはならない。従って、半導体素子
接続用パッド２ａ及び外部接続用パッド２ｂに含有され
る金属粉末が銅であっても問題となることはない。The semiconductor element connecting pads 2a and the external connecting pads 2b are mainly used for electrical connection with the semiconductor element 3 or the external electric circuit board, and their thickness is usually 10 to 20 μm. Since they are thin, even if their electric resistances become high to some extent, they do not become a major obstacle for efficiently connecting the semiconductor element 3 to an external electric circuit. Therefore, even if the metal powder contained in the semiconductor element connecting pad 2a and the external connecting pad 2b is copper, there is no problem.
【００３１】半導体素子接続用パッド２ａ及び外部接続
用パッド２ｂに含有される熱硬化性樹脂は、半導体素子
接続用パッド２ａ及び外部接続用パッド２ｂにおける含
有量が５重量％未満では銅粉末同士を強固に結合できな
いとともに配線導体２を絶縁基体１に強固に被着させる
ことが困難となり、一方、配線導体２における含有量が
40重量％を超えると銅粉末同士を十分に接触させること
が困難となり、配線導体２の電気抵抗が極めて大きなも
のとなる傾向にある。従って、半導体素子接続用パッド
２ａ及び外部接続用パッド２ｂに含有される熱硬化性樹
脂は、半導体素子接続用パッド２ａ及び外部接続用パッ
ド２ｂに対して５乃至40重量％の範囲とすることが好ま
しい。The thermosetting resin contained in the semiconductor element connecting pad 2a and the external connecting pad 2b contains copper powders when the content in the semiconductor element connecting pad 2a and the external connecting pad 2b is less than 5% by weight. It is difficult to firmly bond and it becomes difficult to firmly attach the wiring conductor 2 to the insulating substrate 1, while the content in the wiring conductor 2 is
If it exceeds 40% by weight, it becomes difficult to bring the copper powders into sufficient contact with each other, and the electric resistance of the wiring conductor 2 tends to become extremely large. Therefore, the thermosetting resin contained in the semiconductor element connecting pad 2a and the external connecting pad 2b may be in the range of 5 to 40% by weight with respect to the semiconductor element connecting pad 2a and the external connecting pad 2b. preferable.
【００３２】半導体素子接続用パッド２ａ及び外部接続
用パッド２ｂは、これらに含有される熱硬化性樹脂が例
えばエポキシ樹脂から成る場合、銅粉末にビスフェノー
ルＡ型エポキシ樹脂やビスフェノールＦ型エポキシ樹脂
・ノボラック型エポキシ樹脂・グリシジルエステル型エ
ポキシ樹脂等のエポキシ樹脂及びアミン系硬化剤やイミ
ダゾール系硬化剤・酸無水物系硬化剤等の硬化剤等を添
加混合することによって得られる銅ペーストを、絶縁基
体１となる前駆体シートに従来周知のスクリーン印刷法
等の厚膜手法を採用して所定パターンに印刷塗布すると
ともにこれを絶縁基体１となる前駆体シートとともに熱
硬化させることにより、絶縁基体１の凹部１ｄ周辺上面
及び絶縁基体１下面にそれぞれ被着形成される。When the thermosetting resin contained in the semiconductor element connection pad 2a and the external connection pad 2b is, for example, an epoxy resin, copper powder is mixed with bisphenol A type epoxy resin or bisphenol F type epoxy resin / novolak. Insulating substrate 1 is prepared by adding and mixing an epoxy resin such as epoxy resin / glycidyl ester epoxy resin and a curing agent such as amine-based curing agent, imidazole-based curing agent / acid anhydride-based curing agent, and the like. By using a thick film technique such as a well-known screen printing method to print a predetermined pattern on the precursor sheet to be a substrate, and heat-curing the precursor sheet to form the insulating substrate 1, the concave portion of the insulating substrate 1 is formed. The upper surface of the peripheral portion 1d and the lower surface of the insulating substrate 1 are adhered and formed.
【００３３】なお、半導体素子接続用パッド２ａ及び外
部接続用パッド２ｂは、その露出する表面にニッケルや
金等の耐食性に優れ且つ良導電性の金属をメッキ法によ
り1.0乃至20.0μｍの厚みに層着させておくと、半導体
素子接続用パッド２ａ及び外部接続用パッド２ｂの酸化
腐食を有効に防止することができるとともに半導体素子
接続用パッド２ａとボンディングワイヤ４とを強固に電
気的に接続させることができる。従って、半導体素子接
続用パッド２ａ及び外部接続用パッド２ｂの露出する表
面には、ニッケルや金等の耐食性に優れ且つ良導電性の
金属をメッキ法により1.0乃至20.0μｍの厚みに層着さ
せておくことが好ましい。The semiconductor element connecting pad 2a and the external connecting pad 2b are formed on the exposed surface with a metal having a good corrosion resistance such as nickel or gold and having a good conductivity by plating to a thickness of 1.0 to 20.0 μm. By attaching them, the oxidative corrosion of the semiconductor element connecting pads 2a and the external connecting pads 2b can be effectively prevented, and the semiconductor element connecting pads 2a and the bonding wires 4 can be firmly and electrically connected. You can Thus, the surface exposed pad 2a and the external connection pads 2 b for semiconductor element connection, to particle course 1.0 to a thickness of 20.0μm by plating excellent and highly conductive metal corrosion resistance such as nickel or gold It is preferable to keep.
【００３４】また、配線導体２であって絶縁基体１の内
部に配設された部位は半導体素子接続用パッド２ａと外
部接続用パッド２ｂとを電気的に接続する内部接続導体
２ｃを形成しており、その一端には半導体素子接続用パ
ッド２ａが接続され、他端側には外部接続用パッド２ｂ
が接続されている。Further, the wiring conductor 2 which is disposed inside the insulating substrate 1 is formed with an internal connection conductor 2c for electrically connecting the semiconductor element connection pad 2a and the external connection pad 2b. The semiconductor element connecting pad 2a is connected to one end thereof, and the external connecting pad 2b is connected to the other end thereof.
Are connected.
【００３５】内部接続導体２ｃは、表面が銀で被覆され
た銅粉末、あるいは銀−銅合金粉末を熱硬化性樹脂及び
熱可塑性樹脂で結合して成り、これに含有される表面が
銀で被覆された銅粉末、あるいは銀−銅合金粉末が内部
接続導体２ｃに導電性を付与する作用を為し、一方、熱
硬化性樹脂及び熱可塑性樹脂が表面が銀で被覆された銅
粉末、あるいは銀−銅合金粉末同士を互いに接触させた
状態で結合させるとともに内部接続導体２ｃを絶縁基体
１に被着させる作用を為す。The internal connection conductor 2c is formed by binding copper powder whose surface is coated with silver or silver-copper alloy powder with a thermosetting resin and a thermoplastic resin, and the surface contained therein is coated with silver. The copper powder or the silver-copper alloy powder has a function of imparting conductivity to the internal connecting conductor 2c, while the thermosetting resin and the thermoplastic resin have the surface coated with silver, or silver. -Copper alloy powders are bonded in a state where they are in contact with each other, and the inner connecting conductor 2c is adhered to the insulating substrate 1.
【００３６】内部接続導体２ｃは、これに含有される表
面が銀で被覆された銅粉末や銀−銅合金粉末が酸化しに
くいことから、これら粉末同士の接触抵抗が小さく、従
って内部接続導体２ｃの電気抵抗が小さいものとなり、
半導体素子３を外部電気回路に効率良く接続することが
できる。In the internal connection conductor 2c, the copper powder whose surface is covered with silver or the silver-copper alloy powder is less likely to be oxidized, so that the contact resistance between these powders is small, and therefore the internal connection conductor 2c. Has a low electrical resistance,
The semiconductor element 3 can be efficiently connected to an external electric circuit.
【００３７】また、内部接続導体２ｃは、これに含有さ
れる表面が銀で被覆された銅粉末や銀−銅合金粉末が銀
や金等の貴金属粉末と比較して安価であるため、配線基
板が高価なものとなることもない。The inner connecting conductor 2c is a wiring board because the copper powder whose surface is covered with silver or the silver-copper alloy powder is cheaper than the noble metal powder such as silver or gold. Will not be expensive.
【００３８】更に、内部接続導体２ｃに含有される表面
が銀で被覆された銅粉末や銀−銅合金粉末は、これらに
含まれる銀がエレクトロマイグレーションを起こしやす
い性質を有しているものの、内部接続導体２ｃが絶縁基
体１内部に埋設されていることから銀のエレクトロマイ
グレーションは絶縁基体１により有効に阻止され、その
結果、内部接続導体２ｃ同士が銀のエレクトロマイグレ
ーションにより電気的に短絡することはない。Further, the copper powder and the silver-copper alloy powder whose surfaces are coated with silver contained in the internal connection conductor 2c have the property that the silver contained therein easily causes electromigration. Since the connecting conductor 2c is embedded inside the insulating substrate 1, electromigration of silver is effectively prevented by the insulating substrate 1, and as a result, the internal connecting conductors 2c are electrically short-circuited by silver electromigration. Absent.
【００３９】なお、内部接続導体２ｃに含有される表面
が銀で被覆された銅粉末や銀−銅合金粉末は、その形状
を多面体形状としておくと、内部接続導体２ｃにおける
表面が銀で被覆された銅粉末や銀−銅合金粉末同士の接
触が面接触となることから、一般的に使用されている球
状のものと比較して内部接続導体２ｃの電気抵抗を小さ
いものとすることができ、特に多面体形状の金属粉末の
ＢＥＴ比表面積を0.1ｍ2 ／ｇ〜2.5 ｍ2 ／ｇの範囲と
しておくと、粉末を内部接続導体２ｃ内で高密度に充填
することが可能となり、極めて低抵抗の内部接続導体２
ｃを得ることができる。従って、前記内部接続導体２ｃ
に含有される表面が銀で被覆された銅粉末や銀−銅合金
粉末は、その形状を多面体形状としておくことが好まし
く、更には該多面体形状の金属粉末のＢＥＴ比表面積を
0.1 ｍ2 ／ｇ〜2.5 ｍ2 ／ｇの範囲としておくことが好
ましい。The copper powder or the silver-copper alloy powder whose surface is coated with silver contained in the internal connecting conductor 2c has a polyhedral shape, and the surface of the internal connecting conductor 2c is covered with silver. Since the copper powder and the silver-copper alloy powder are in surface contact with each other, the electric resistance of the internal connection conductor 2c can be made smaller than that of a generally used spherical one, especially Leaving the BET specific surface area of the metal powder of polyhedral shape in a range of 0.1m 2 /g~2.5 m 2 / g, it is possible to fill powder densely within internal connection conductor 2c, very low resistance Internal connection conductor 2
c can be obtained. Therefore, the internal connection conductor 2c
It is preferable that the surface of the copper powder and the silver-copper alloy powder that are coated with silver have a polyhedral shape, and further, the BET specific surface area of the polyhedral metal powder is
It is preferably set in the range of 0.1 m 2 / g to 2.5 m 2 / g.
【００４０】ここで、本発明にかかる金属粉末が多面体
形状であるというのは、金属粉末が十四面体（かど切り
八面体）以上の平面を有するつぶ状粒子であることをい
う。Here, the fact that the metal powder according to the present invention has a polyhedral shape means that the metal powder is a crushed particle having a plane of tetradecahedral (corner octahedron) or more.
【００４１】つぶ状粒子の表面が上記十四面以上の平面
を有していれば、その他の面は曲面であっても凹凸を有
していてもよい。As long as the surface of the crushed particles has the above-mentioned fourteen or more flat surfaces, the other surfaces may be curved or uneven.
【００４２】内部接続導体２ｃに含有される熱硬化性樹
脂は、内部接続導体２ｃに耐熱性を付与する作用を為
し、内部接続導体２ｃにおける含有量が0.1 重量％未満
では例えば外部接続用パッド２ｂを外部電気回路基板の
配線導体に半田等を介して接続する際等の高温下におい
て内部配線導体２ｃを所定のパターンに維持することが
できなくなる傾向がある。従って、内部接続導体２ｃに
含有される熱硬化性樹脂は内部配線導体２ｃにおける含
有量が0.1 重量％以上であることが好ましい。The thermosetting resin contained in the internal connection conductor 2c acts to impart heat resistance to the internal connection conductor 2c, and if the content in the internal connection conductor 2c is less than 0.1% by weight, for example, an external connection pad. There is a tendency that the internal wiring conductor 2c cannot be maintained in a predetermined pattern under high temperature when the wiring conductor 2b is connected to the wiring conductor of the external electric circuit board via solder or the like. Therefore, the thermosetting resin contained in the internal connecting conductor 2c is preferably contained in the internal wiring conductor 2c in an amount of 0.1% by weight or more.
【００４３】また、内部接続導体２ｃに含有される熱可
塑性樹脂は、後述するように内部接続導体２ｃとなる金
属ペーストを絶縁基体１となる前駆体シートに印刷塗布
する際に金属ペーストの印刷性を良好として内部接続導
体２ｃを所定のパターンに正確に印刷塗布させる作用を
為し、内部接続導体２ｃにおける含有量が0.1 重量％未
満であれば、内部接続導体２ｃとなる金属ペーストの印
刷性が劣るものとなって内部接続導体２ｃを正確なパタ
ーンに形成することができなくなる。従って、内部接続
導体２ｃに含有される熱可塑性樹脂は内部接続導体２ｃ
における含有量が0.1 重量％以上であることが好まし
い。The thermoplastic resin contained in the internal connection conductor 2c has a printability of the metal paste when the metal paste to be the internal connection conductor 2c is applied by printing onto the precursor sheet to be the insulating substrate 1, as will be described later. When the content in the internal connecting conductor 2c is less than 0.1% by weight, the printability of the metal paste to be the internal connecting conductor 2c is improved. It becomes inferior and it becomes impossible to form the internal connection conductor 2c in an accurate pattern. Therefore, the thermoplastic resin contained in the internal connection conductor 2c is
It is preferable that the content in is 0.1% by weight or more.
【００４４】更に、内部接続導体２ｃに含有される熱硬
化性樹脂及び熱可塑性樹脂は、これらの合計の含有量を
内部接続導体２ｃに対して５重量％未満としておくと、
内部接続導体２ｃの電気抵抗を極めて小さいものとする
ことができる。従って、内部接続導体２ｃに含有される
熱硬化性樹脂及び熱可塑性樹脂は、これらの合計の含有
量を内部接続導体２ｃに対して５重量％未満としておく
ことが好ましい。Further, if the total content of the thermosetting resin and the thermoplastic resin contained in the internal connecting conductor 2c is less than 5% by weight with respect to the internal connecting conductor 2c,
The electric resistance of the internal connection conductor 2c can be made extremely small. Therefore, it is preferable that the total content of the thermosetting resin and the thermoplastic resin contained in the internal connection conductor 2c is less than 5% by weight with respect to the internal connection conductor 2c.
【００４５】この場合、内部接続導体２ｃは、絶縁基体
１内部に配設されているため、外力等が直接印加される
ことはないことから絶縁基体１に対してそれほど強固に
被着されている必要はなく、従って、内部接続導体２ｃ
に含有される熱硬化性樹脂及び熱可塑性樹脂の合計量を
５重量％未満としても絶縁基体１から剥離する等の問題
が発生することはない。In this case, since the internal connecting conductor 2c is disposed inside the insulating base 1, no external force or the like is directly applied, so that the internal connecting conductor 2c is firmly attached to the insulating base 1. It is not necessary, therefore the internal connection conductor 2c
Even if the total amount of the thermosetting resin and the thermoplastic resin contained in 5 is less than 5% by weight, the problem such as peeling from the insulating substrate 1 does not occur.
【００４６】なお、内部接続導体２ｃは、これに含有さ
れる熱硬化性樹脂が例えばエポキシ樹脂から成る場合、
表面が銀で被覆された銅粉末、あるいは銀−銅合金粉末
に、ビスフェノールＡ型エポキシ樹脂やビスフェノール
Ｆ型エポキシ樹脂・ノボラック型エポキシ樹脂・グリシ
ジルエステル型エポキシ樹脂等のエポキシ樹脂及びアミ
ン系硬化剤やイミダゾール系硬化剤・酸無水物系硬化剤
等の硬化剤、更にアクリル系樹脂やセルロース系樹脂等
の熱可塑性樹脂を添加混合することによって得られる金
属ペーストを絶縁基体１となる前駆体シートに従来周知
のスクリーン印刷法等の厚膜手法を採用して所定パター
ンに印刷塗布するとともにこれを絶縁基体１となる前駆
体シートとともに熱硬化させることにより絶縁基体１の
内部に一端が半導体素子接続用パッド２ａに接続される
とともに他端が外部接続用パッド２ｂに接続されるよう
にして埋設される。When the thermosetting resin contained in the internal connecting conductor 2c is made of, for example, an epoxy resin,
An epoxy resin such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a novolac type epoxy resin, or a glycidyl ester type epoxy resin, and an amine type curing agent are added to a copper powder whose surface is coated with silver or a silver-copper alloy powder. Conventionally, a metal paste obtained by adding and mixing a curing agent such as an imidazole-based curing agent or an acid anhydride-based curing agent, and a thermoplastic resin such as an acrylic resin or a cellulosic resin is conventionally used as a precursor sheet for the insulating substrate 1. A well-known screen printing method or other thick film technique is used to print and apply a predetermined pattern, and this is thermally cured together with a precursor sheet to be the insulating substrate 1, so that one end inside the insulating substrate 1 is a semiconductor element connection pad. 2a and is embedded so that the other end is connected to the external connection pad 2b.
【００４７】かくして本発明の配線基板によれば、絶縁
基体１の凹部１ｄ底面に半導体素子３を接着固定すると
ともに半導体素子３の各電極をボンディングワイヤ４を
介して半導体素子接続用パッド２ａに電気的に接続し、
最後に絶縁基体１の上面に蓋体５を封止材を介して接合
させることにより製品としての半導体装置となる。Thus, according to the wiring board of the present invention, the semiconductor element 3 is adhered and fixed to the bottom surface of the recess 1d of the insulating substrate 1, and each electrode of the semiconductor element 3 is electrically connected to the semiconductor element connection pad 2a through the bonding wire 4. Connection,
Finally, the lid 5 is bonded to the upper surface of the insulating substrate 1 via a sealing material to obtain a semiconductor device as a product.
【００４８】なお、本発明は上述の実施の形態に限定さ
れるものではなく、本発明の要旨を逸脱しない範囲であ
れば、種々の変更は可能である。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.
【００４９】[0049]
【発明の効果】本発明の配線基板によれば、絶縁基体が
無機絶縁物粉末を靱性に優れる熱硬化樹脂により結合す
ることによって形成されていることから、配線基板同士
あるいは配線基板と半導体装置製作ラインの一部とが激
しく衝突しても絶縁基体に欠けや割れ・クラックが発生
することはない。According to the wiring board of the present invention, since the insulating substrate is formed by bonding the inorganic insulating powders with the thermosetting resin having excellent toughness, the wiring boards can be manufactured or the wiring boards and the semiconductor device can be manufactured. Even if a part of the line collides violently, the insulating substrate will not be chipped, cracked or cracked.
【００５０】本発明の配線基板によると、絶縁基体の表
面に配設された配線導体は、これに含まれる金属粉末が
銅から成り、銅はエレクトロマイグレーションを起こし
にくい金属であることから、絶縁基体の表面に互いに隣
接して設けた配線導体間に電位差があっても、それら隣
接する配線導体間に銅のエレクトロマイグレーションに
よる電気的短絡が発生することはない。According to the wiring board of the present invention, the wiring conductor disposed on the surface of the insulating base is such that the metal powder contained in the wiring conductor is copper, and copper is a metal that does not easily cause electromigration. Even if there is a potential difference between the wiring conductors provided adjacent to each other on the surface of, the electrical short circuit due to electromigration of copper does not occur between the adjacent wiring conductors.
【００５１】同時に、本発明の配線基板によると、絶縁
基体内部に配設された配線導体は、これに含まれる金属
粉末が表面を銀で被覆した銅あるいは銀−銅合金から成
ることから、金や銀等の貴金属粉末を採用する場合に比
べて比較的安価であるため配線基板を安価に製作するこ
とができるとともに、金属粉末の表面が酸化しにくく絶
縁基体内部に配設された配線導体の電気抵抗が小さなも
のとなり、半導体素子を外部電気回路基板に効率良く接
続することができる。At the same time, according to the wiring board of the present invention, the wiring conductor arranged inside the insulating substrate is made of copper or silver-copper alloy whose surface is covered with metal powder. Since it is relatively inexpensive compared to the case of using a noble metal powder such as silver or silver, the wiring board can be manufactured at a low cost, and the surface of the metal powder is less likely to be oxidized, and the wiring conductor disposed inside the insulating substrate The electric resistance becomes small, and the semiconductor element can be efficiently connected to the external electric circuit board.
【００５２】また、本発明の配線基板によると、絶縁基
体の内部に配設された配線導体に含有される樹脂を配線
導体に対して熱硬化性樹脂及び熱可塑性樹脂をそれぞれ
0.1重量％以上且つ合計量が配線導体に対して５重量％
未満含むものとしたことから、絶縁基体の内部に配設さ
れた配線導体を耐熱性に優れたものとすることができる
とともに配線導体を正確なパターンにて形成することが
でき、且つ配線導体の電気抵抗を極めて小さいものとす
ることができる。Further, according to the wiring board of the present invention, the resin contained in the wiring conductor disposed inside the insulating substrate is a thermosetting resin and a thermoplastic resin, respectively.
0.1 wt% or more and the total amount is 5 wt% with respect to the wiring conductor
Since the content of the wiring conductor is less than that of the wiring conductor, the wiring conductor disposed inside the insulating substrate can have excellent heat resistance, and the wiring conductor can be formed in an accurate pattern. The electric resistance can be made extremely small.
【００５３】更に本発明の配線基板によると、絶縁基体
の内部に配設された配線導体に含有される金属粉末を多
面体形状としておくと絶縁基体の内部に配設された配線
導体内部での金属粉末同士の接触が面接触となり、絶縁
基体の内部に配設された配線導体の電気抵抗を極めて小
さいものとすることができる。Further, according to the wiring board of the present invention, when the metal powder contained in the wiring conductor arranged inside the insulating base is made into a polyhedral shape, the metal inside the wiring conductor arranged inside the insulating base is formed. The powder particles come into surface contact with each other, so that the electric resistance of the wiring conductor arranged inside the insulating substrate can be made extremely small.
【００５４】更にまた本発明の配線基板によると、配線
導体に含有される金属粉末をＢＥＴ比表面積が0.1 ｍ2
／ｇ乃至2.5 ｍ2 ／ｇの多面体形状の金属粉末としたこ
とから、絶縁基体の内部に配設された配線導体中での金
属粉末の充填密度を高密度として且つ良好な面接触とす
ることができ、絶縁基体内部に配設された配線導体の電
気抵抗を更に小さいものとすることができる。Furthermore, according to the wiring board of the present invention, the metal powder contained in the wiring conductor has a BET specific surface area of 0.1 m 2.
/ G to 2.5 m 2 / g of polyhedral metal powder, so that the packing density of the metal powder in the wiring conductor arranged inside the insulating substrate should be high and the surface contact should be good. Therefore, the electric resistance of the wiring conductor arranged inside the insulating substrate can be further reduced.
【００５５】従って、本発明によれば、無機絶縁物粉末
を熱硬化性樹脂により結合して成る絶縁基板に金属粉末
を熱硬化性樹脂により結合して成る配線導体が被着され
て成る配線基板について、電気抵抗が小さく且つ正確な
配線パターン形成が可能で半導体素子を外部電気回路に
効率良く且つ安定に接続でき、しかも安価に作製でき
る、半導体装置に好適な配線基板を提供することができ
た。[0055] Therefore, according to the present invention, the wiring board on which a wiring conductor of the inorganic insulating powder in an insulating substrate comprising bound with a thermosetting resin made of a metal powder attached with a thermosetting resin is formed by depositing Concerning the above, there is provided a wiring board suitable for a semiconductor device, which has a low electric resistance, can form an accurate wiring pattern, can efficiently and stably connect a semiconductor element to an external electric circuit , and can be manufactured at low cost. I was able to.
【図１】本発明の配線基板を半導体素子収納用パッケー
ジに適用した場合を示す実施の形態の例の断面図であ
る。FIG. 1 is a cross-sectional view of an example of an embodiment showing a case where a wiring board of the present invention is applied to a semiconductor element housing package.
１・・・・・絶縁基体 ２・・・・・配線導体 1 ... Insulating substrate 2 ... Wiring conductor
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ // Ｈ０５Ｋ 3/12 ６１０ Ｈ０１Ｌ 23/14 Ｒ (56)参考文献 特開 平８−125291（ＪＰ，Ａ) 特開 平８−288596（ＪＰ，Ａ) 特開 平８−307024（ＪＰ，Ａ) 特開 平４−32297（ＪＰ，Ａ) 特開 昭63−288095（ＪＰ，Ａ) 特開 昭62−265796（ＪＰ，Ａ) 特開 平４−365806（ＪＰ，Ａ) 特開 昭62−63604（ＪＰ，Ａ) 特開 平７−135386（ＪＰ，Ａ) 特開 平８−34096（ＪＰ，Ａ) 特開 平10−50890（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H05K 1/02 H05K 1/03 H05K 1/09 H05K 3/12 H05K 3/46 H01L 23/12 - 23/15 H01B 1/00 - 1/24 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI // H05K 3/12 610 H01L 23/14 R (56) References JP-A-8-125291 (JP, A) JP-A-8 -288596 (JP, A) JP-A-8-307024 (JP, A) JP-A-4-32297 (JP, A) JP-A-63-288095 (JP, A) JP-A-62-265796 (JP, A) ) JP-A-4-365806 (JP, A) JP-A-62-63604 (JP, A) JP-A-7-135386 (JP, A) JP-A-8-34096 (JP, A) JP-A-10- 50890 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H05K 1/02 H05K 1/03 H05K 1/09 H05K 3/12 H05K 3/46 H01L 23/12-23/15 H01B 1/00-1/24
Claims (2)
５乃至４０重量％の熱硬化性樹脂により結合して成る絶
縁基体の表面及び内部に、少なくとも熱硬化性樹脂を含
む樹脂により金属粉末を結合して成る配線導体が配設さ
れて成る配線基板であって、前記絶縁基体の表面に配設
された配線導体の金属粉末は銅から成り、前記絶縁基体
の内部に配設された配線導体の金属粉末は表面を銀で被
覆された銅もしくは銀−銅合金から成り、前記絶縁基体
の内部に配設された配線導体は該配線導体に対して熱硬
化性樹脂及び熱可塑性樹脂をそれぞれ０．１重量％以上
且つ合計で５重量％未満含むことを特徴とする配線基
板。 1. A metal powder made of a resin containing at least a thermosetting resin on the surface and inside of an insulating substrate formed by bonding 60 to 95% by weight of an inorganic insulating powder with 5 to 40% by weight of a thermosetting resin. A wiring board formed by connecting wiring conductors, wherein the metal powder of the wiring conductor arranged on the surface of the insulating base is copper, and the wiring is arranged inside the insulating base. conductor of the metal powder is copper coated or silver surface with silver - Ri copper alloy forming said insulating substrate
The wiring conductor arranged inside the
0.1% by weight or more of each of the volatile resin and the thermoplastic resin
And a wiring substrate containing less than 5% by weight in total
Board.
体に含有される金属粉末がＢＥＴ比表面積が０．１乃至
２．５ｍ 2 ／ｇである多面体形状を有することを特徴と
する請求項１記載の配線基板。 2. A wiring conductor disposed inside the insulating base.
The metal powder contained in the body has a BET specific surface area of 0.1 to
Characterized by having a polyhedral shape of 2.5 m 2 / g
The wiring board according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31807996A JP3398291B2 (en) | 1996-11-28 | 1996-11-28 | Wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31807996A JP3398291B2 (en) | 1996-11-28 | 1996-11-28 | Wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10163364A JPH10163364A (en) | 1998-06-19 |
| JP3398291B2 true JP3398291B2 (en) | 2003-04-21 |
Family
ID=18095247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31807996A Expired - Fee Related JP3398291B2 (en) | 1996-11-28 | 1996-11-28 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3398291B2 (en) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0623405B2 (en) * | 1985-09-17 | 1994-03-30 | 川崎製鉄株式会社 | Method for producing spherical copper fine powder |
| JPS62265796A (en) * | 1986-05-14 | 1987-11-18 | 株式会社住友金属セラミックス | Ceramic multilayer interconnection board and manufacture of the same |
| JPH0783180B2 (en) * | 1987-05-20 | 1995-09-06 | 松下電器産業株式会社 | Ceramic multilayer substrate and manufacturing method thereof |
| JP2885477B2 (en) * | 1990-05-29 | 1999-04-26 | 京セラ株式会社 | Multilayer wiring board and method of manufacturing the same |
| JP2554213B2 (en) * | 1991-06-11 | 1996-11-13 | 川崎製鉄株式会社 | Method for producing spherical nickel ultrafine powder |
| JP3360378B2 (en) * | 1993-11-09 | 2002-12-24 | 東レ株式会社 | Method of forming pattern on ceramic green sheet |
| JPH0834096A (en) * | 1994-05-20 | 1996-02-06 | Toray Ind Inc | Ceramics green sheet and formation of pattern thereon |
| JP3152852B2 (en) * | 1994-10-27 | 2001-04-03 | 京セラ株式会社 | Wiring board and manufacturing method thereof |
| JP3292620B2 (en) * | 1995-04-20 | 2002-06-17 | 京セラ株式会社 | Wiring board and method of manufacturing the same |
| JP3292623B2 (en) * | 1995-05-11 | 2002-06-17 | 京セラ株式会社 | Wiring board and method of manufacturing the same |
| JP3393760B2 (en) * | 1996-07-30 | 2003-04-07 | 京セラ株式会社 | Wiring board and method of manufacturing the same |
-
1996
- 1996-11-28 JP JP31807996A patent/JP3398291B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10163364A (en) | 1998-06-19 |
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