JP3384209B2 - Measurement method for solid-state imaging device - Google Patents
Measurement method for solid-state imaging deviceInfo
- Publication number
- JP3384209B2 JP3384209B2 JP26561895A JP26561895A JP3384209B2 JP 3384209 B2 JP3384209 B2 JP 3384209B2 JP 26561895 A JP26561895 A JP 26561895A JP 26561895 A JP26561895 A JP 26561895A JP 3384209 B2 JP3384209 B2 JP 3384209B2
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- Prior art keywords
- imaging device
- state imaging
- solid
- temperature
- reference value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、固体撮像素子の特
性、欠陥の合否判定等に適用される固体撮像素子の測定
方法に関する。
【０００２】
【従来の技術及び発明が解決しようとする課題】半導体
で形成した固体撮像素子では、局部的な画素欠陥が生じ
ることがある。このため、このような特性・欠陥（例え
ば白点の欠陥等）の合否判定のための測定が行われてい
る。ところで、ＣＣＤ固体撮像素子での特性、欠陥の測
定においては、特性、欠陥が温度依存性をもつため、即
ち例えば白点の欠陥は温度が高くなる程大きくなるた
め、従来は、ヒータブロック等による加熱、冷却を行い
測定すべき固体撮像素子を一定温度にて測定を行ってい
た。この場合、一定温度は、保証温度である場合もあ
り、若しくは保証温度範囲内の温度で、温度依存換算し
て判定している場合もある。
【０００３】このような従来技術においては、ヒータブ
ロック、プリヒータブロック等を使用するために、測定
装置が機構的に複雑になるとともに、固体撮像素子が一
定温度に安定する時間が必要となり、測定に要する時間
に影響を与えていた。
【０００４】
【課題を解決するための手段】本発明は、上述に点に鑑
み、測定装置の小型化、簡素化を図り、且つ測定時間の
短縮を図った固体撮像素子の測定方法を提供するもので
ある。
【０００５】
【課題を解決するための手段】本発明に係る固体撮像素
子の測定方法は、固体撮像素子の出力信号を基準値と比
較して該固体撮像素子の特性、欠陥を測定する固体撮像
素子の測定方法であって、固体撮像素子の出力側に設け
られたゲインコントローラと、固体撮像素子を駆動する
ための駆動パルス発生部及び基準値発生部を有し、固体
撮像素子の温度に応じた制御信号を前記ゲインコントロ
ーラ、駆動パルス発生部又は基準値発生部の少なくとも
１つに与え、ゲイン、蓄積期間又は基準値の少なくとも
１つを制御して特性、欠陥の測定を行うようにする。
【０００６】固体撮像素子の温度に応じてゲインコント
ローラのゲイン、駆動パルス発生部に基づく電荷蓄積期
間又は基準値発生部の基準値の少なくとも１つを制御し
て特性、欠陥の測定を行うことにより、固体撮像素子の
温度制御が不要となり、測定装置の小型化、簡素化が図
られ、且つ測定時間の短縮が可能となる。
【０００７】
【０００８】
【０００９】
【００１０】【発明の実施の形態】
以下、図面を参照して本発明の実
施例について説明する。
【００１１】本例は、固体撮像素子の諸特性、欠陥の判
定、例えば白点の欠陥の合否判定に適用した場合であ
る。図１〜図３は、本発明に係る固体撮像素子の特性、
欠陥の判定に供する測定方法の実施例である。
【００１２】同図において、１はＣＣＤ固体撮像素子を
示す。このＣＣＤ固体撮像素子１は、駆動パルス発生
部、即ち、タイミングジェネレータ２より駆動回路３を
通じて供給された各種の駆動パルス、例えば垂直転送ク
ロックパルス、水平転送クロックパルス、リセットパル
ス、その他等によって駆動される。ＣＣＤ固体撮像素子
１で得られた出力信号は、サンプルホールド回路４及び
ゲインコントローラ５を通じて信号処理され、出力端子
ｔに出力される。６はＣＣＤ固体撮像素子１の温度を検
出する温度検出器を示す。ゲインコントローラ５の出力
端子ｔに得られる出力信号の値と、判定基準値発生部７
で得られる判定基準値とが比較器８に供給されて比較さ
れ、合否の判定のための測定、即ち出力信号の判定基準
値に対する大小が測定されるようになされる。
【００１３】図４は、本実施例に係る温度検出部分を示
す。この例では、パッケージされたＣＣＤ固体撮像素子
１がそのリード線１３を介してソケット１１に連結さ
れ、このソケット１１の凹所内にＣＣＤ固体撮像素子１
の下面に接触してＣＣＤ固体撮像素子１の温度を検出す
る温度検出器、即ち、例えばＩＣ温度センサ、サーミス
タ又は熱電対等による温度センサ６が配置される。温度
センサ６の引き出し線１２は、第１のプリント配線基板
１４を通じてソケット１１の外部に導出される。ソケッ
ト１１は第２のプリント配線基板１５上にマウントさ
れ、温度センサ６の引き出し線１２及びソケット１１の
リード１６が第２のプリント配線基板１５に接続され
る。測定されるべきＣＣＤ固体撮像素子１は、この下面
に接触する温度センサ６によって温度検出され、温度セ
ンサ６から検出温度に応じた検出信号（例えば検出電
圧）が出力される。
【００１４】ここで、例えば白点の欠陥の合否判定する
場合、ＣＣＤ固体撮像素子１からの白点の欠陥に関する
出力信号の値は、温度依存性を有し、ＣＣＤ固体撮像素
子の温度が高い程、出力信号の値が大きくなる。
【００１５】図１の実施例に係る測定方法は、白点の欠
陥の合否を判定すべきＣＣＤ固体撮像素子１の温度を温
度検出器６にて検出し、その検出信号（例えば検出電
圧）を判定基準値発生部７にフィードバックして、この
判定基準値発生部７から得られる判定基準値を検出温度
に応じた値に調整する。即ち温度が高ければ、それに応
じて判定基準値を上げる。そして、検出温度に応じて調
整された判定基準値と、ＣＣＤ固体撮像素子１の出力端
子ｔからの出力信号とを比較し、比較器８から得られる
出力の大小によって白点の欠陥の合否を判定する。
【００１６】この方法によれば、ＣＣＤ固体撮像素子１
の温度に応じて判定基準値が調整され、この調整された
判定基準値を用いて合否判定するので、測定されるＣＣ
Ｄ固体撮像素子１に対する温度制御が不要となり、測定
装置の小型化、簡素化が図れる。また、測定時に、ＣＣ
Ｄ固体撮像素子１を一定温度に安定させる時間が必要な
くなるので、測定に要する時間を短縮することができ
る。
【００１７】図２の実施例に係る測定方法は、白点の欠
陥の合否を判定すべきＣＣＤ固体撮像素子１の温度を温
度検出器６にて検出し、その検出信号（例えば検出電
圧）をゲインコントローラ５にフィードバックして、そ
のゲイン（増幅率）を検出温度に応じて制御する。即
ち、温度が高ければそれに応じてゲインを下げる。そし
て、ＣＣＤ固体撮像素子１からの出力信号を温度に応じ
てゲインが制御されたゲインコントローラ５を通じて出
力し、その出力端子ｔから得られた出力信号と、判定基
準値発生部７で得られた基準温度での判定基準値とを比
較し、比較器８から得られる出力の大小によって白点の
欠陥の合否を判定する。
【００１８】この測定方法によれば、ＣＣＤ固体撮像素
子１の温度に応じてゲインコントローラ５のゲインが制
御され、制御されたゲインコントローラ５を通じて得ら
れた出力信号と、基準温度での判定基準値とを比較する
ので、測定時のＣＣＤ固体撮像素子１を温度制御するこ
となく合否判定することができる。従って、測定される
ＣＣＤ固体撮像素子１に対する温度制御が不要となり、
測定装置の小型化、簡素化が図れる。また、測定時に、
ＣＣＤ固体撮像素子１を一定温度に安定させる時間が必
要なくなるので、測定に要する時間を短縮することがで
きる。
【００１９】図３の実施例に係る測定方法は、白点の欠
陥の合否を判定すべきＣＣＤ固体撮像素子１の温度を温
度検出器６にて検出し、その検出信号（例えば、検出電
圧）をタイミングジェネレータ２にフィードバックし
て、撮像部での電荷蓄積時間を検出温度に応じて制御す
る。温度が高ければ電荷蓄積時間を短くする。そして、
ＣＣＤ固体撮像素子１の温度に応じて蓄積時間が制御さ
れて出力端子ｔから得られた出力信号と、判定基準値発
生部７の基準温度での判定基準値とを比較し、比較器８
から得られる出力の大小によって白点の欠陥の合否を判
定する。
【００２０】この測定方法によれば、ＣＣＤ固体撮像素
子１の温度に応じて電荷蓄積時間が制御されるので、出
力端子ｔで得られた出力信号と、基準温度での判定基準
値とを比較するので、測定時のＣＣＤ固体撮像素子１を
温度制御することなく合否判定することができる。従っ
て、測定すべきＣＣＤ固体撮像素子１に対する温度制御
が不要となり、測定装置の小型化、簡素化が図れる。ま
た、測定時に、ＣＣＤ固体撮像素子１を一定温度に安定
させる時間が必要なくなるので、測定に要する時間を短
縮することができる。
【００２１】上例では、測定されるＣＣＤ固体撮像素子
の温度に応じて、判定基準値、ゲインコントローラ５の
ゲイン、又は電荷蓄積時間を制御するようにしたが、之
等の制御を２種以上、組み合わせて合否判定することも
できる。
【００２２】また、上例ではＣＣＤ固体撮像素子におけ
る白点の欠陥の合否判定に適用したが、その他の諸特
性、欠陥の測定（合否判定）にも適用することができ
る。
【００２３】更に、上例では、ＣＣＤ固体撮像素子に対
する測定に適用したが、その他の半導体素子の温度依存
性をもつ特性、欠陥の測定にも適用することができる。
【００２４】
【発明の効果】本発明に係る固体撮像素子の測定方法に
よれば、測定されるべき固体撮像素子に対して、ヒータ
等の温度制御が不要となり、測定装置の小型化、簡素化
が可能となる。また、従来のような測定されるべき固体
撮像素子の温度を一定温度、即ち温度平行に達する時間
を待つ必要がなくなり、測定時間を短縮することができ
る。したがって、固体撮像素子の特性、欠陥の合否判定
を簡便に行うことができる。
【００２５】
【００２６】また、固体撮像素子の特性、欠陥等の測定
に際して、基準値、ゲインコントローラのゲイン、又は
電荷蓄積時間を測定時の温度に応じて制御して、出力信
号と基準値を比較して測定するので、簡単且つ迅速に測
定することができる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device.
Of solid-state image sensor applied to the judgment of pass / fail of defects
About the method. 2. Description of the Related Art In a solid-state imaging device formed of a semiconductor, a local pixel defect may occur. For this reason, measurement is performed for the pass / fail judgment of such characteristics and defects (for example, white spot defects). By the way, in the measurement of characteristics and defects in a CCD solid-state imaging device, since the characteristics and defects have a temperature dependency, that is, for example, the defect of a white point becomes larger as the temperature becomes higher. The solid-state imaging device to be measured by heating and cooling was measured at a constant temperature. In this case, the fixed temperature may be a guaranteed temperature, or may be a temperature within a guaranteed temperature range and determined by temperature-dependent conversion. In such a conventional technique, the use of a heater block, a pre-heater block, and the like makes the measuring device mechanically complicated, and also requires time for the solid-state imaging device to stabilize at a constant temperature. Time was affected. SUMMARY OF THE INVENTION In view of the above, the present invention provides a method for measuring a solid-state imaging device , in which the measurement device is reduced in size and simplified, and the measurement time is shortened. Things. [0005] A solid-state imaging device according to the present invention.
The measurement method of the element is to compare the output signal of the solid-state image sensor with the reference value.
Comparing the characteristics and defects of the solid-state imaging device
A method for measuring a device, which is provided on an output side of a solid-state imaging device.
The gain controller and the solid-state imaging device
A drive pulse generator and a reference value generator for
A control signal corresponding to the temperature of the image sensor is transmitted to the gain control.
Controller, drive pulse generator or reference value generator
At least one of gain, accumulation period or reference value
One of them is controlled to measure characteristics and defects. [0006] The gain control according to the temperature of the solid-state image sensor.
Charge accumulation period based on roller gain and drive pulse generator
Controlling at least one of the reference values of the interval or the reference value generator
By measuring the characteristics and the defects, the temperature control of the solid-state imaging device becomes unnecessary, and the measurement device can be reduced in size and simplified, and the measurement time can be shortened. [0010] Embodiments of the present invention will be described below with reference to the drawings. This embodiment is a case where the present invention is applied to the determination of various characteristics and defects of a solid-state imaging device, for example, the determination of pass / fail of a white spot defect. 1 to 3 show characteristics of the solid-state imaging device according to the present invention,
5 is an example of a measurement method used for determining a defect. In FIG. 1, reference numeral 1 denotes a CCD solid-state imaging device. The CCD solid-state imaging device 1 is driven by a drive pulse generator, that is, various drive pulses supplied from a timing generator 2 through a drive circuit 3, for example, a vertical transfer clock pulse, a horizontal transfer clock pulse, a reset pulse, and the like. You. An output signal obtained by the CCD solid-state imaging device 1 is subjected to signal processing through a sample hold circuit 4 and a gain controller 5 and output to an output terminal t. Reference numeral 6 denotes a temperature detector for detecting the temperature of the CCD solid-state imaging device 1. A value of an output signal obtained at an output terminal t of the gain controller 5 and a determination reference value generation unit 7
Is supplied to the comparator 8 and compared therewith, and the measurement for the pass / fail judgment, that is, the magnitude of the output signal with respect to the judgment reference value is measured. FIG. 4 shows a temperature detecting portion according to this embodiment. In this example, the packaged CCD solid-state imaging device 1 is connected to a socket 11 via its lead wire 13, and the CCD solid-state imaging device 1 is inserted into a recess of the socket 11.
A temperature detector for detecting the temperature of the CCD solid-state imaging device 1 by contacting the lower surface of the CCD solid-state image sensor 1, that is, a temperature sensor 6 such as an IC temperature sensor, a thermistor, or a thermocouple is disposed. The lead wire 12 of the temperature sensor 6 is led out of the socket 11 through the first printed wiring board 14. The socket 11 is mounted on the second printed wiring board 15, and the lead wire 12 of the temperature sensor 6 and the lead 16 of the socket 11 are connected to the second printed wiring board 15. The temperature of the CCD solid-state imaging device 1 to be measured is detected by a temperature sensor 6 that contacts the lower surface, and a detection signal (for example, a detection voltage) corresponding to the detected temperature is output from the temperature sensor 6. Here, for example, when the pass / fail of a white point defect is determined, the value of an output signal relating to a white point defect from the CCD solid-state imaging device 1 has temperature dependency, and the temperature of the CCD solid-state imaging device is high. As the value increases, the value of the output signal increases. In the measuring method according to the embodiment shown in FIG. 1, the temperature of the CCD solid-state imaging device 1 to be judged as to whether or not the white spot is defective is detected by the temperature detector 6, and a detection signal (for example, a detection voltage) is detected. Feedback is made to the criterion value generator 7 to adjust the criterion value obtained from the criterion value generator 7 to a value corresponding to the detected temperature. That is, if the temperature is high, the judgment reference value is increased accordingly. Then, the judgment reference value adjusted according to the detected temperature is compared with the output signal from the output terminal t of the CCD solid-state imaging device 1, and the pass / fail of the white spot defect is determined based on the magnitude of the output obtained from the comparator 8. judge. According to this method, the CCD solid-state imaging device 1
The judgment reference value is adjusted according to the temperature of the test, and the pass / fail judgment is made using the adjusted judgment reference value.
Temperature control for the D solid-state imaging device 1 is not required, and the measurement device can be reduced in size and simplified. Also, when measuring, CC
Since the time for stabilizing the D solid-state imaging device 1 at a constant temperature is not required, the time required for measurement can be reduced. In the measuring method according to the embodiment shown in FIG. 2, the temperature of the CCD solid-state imaging device 1 to be judged as to whether or not the white spot is defective is detected by the temperature detector 6, and a detection signal (for example, a detection voltage) is detected. The gain (amplification factor) is controlled according to the detected temperature by feeding back to the gain controller 5. That is, if the temperature is high, the gain is reduced accordingly. Then, an output signal from the CCD solid-state imaging device 1 is output through a gain controller 5 whose gain is controlled in accordance with the temperature. The output signal obtained from the output terminal t and the output signal obtained from the determination reference value generation unit 7 are obtained. By comparing the output with the reference value at the reference temperature, the pass / fail of the white spot defect is determined based on the magnitude of the output obtained from the comparator 8. According to this measuring method, the gain of the gain controller 5 is controlled in accordance with the temperature of the CCD solid-state imaging device 1, and the output signal obtained through the controlled gain controller 5 and the judgment reference value at the reference temperature Can be determined without temperature control of the CCD solid-state imaging device 1 at the time of measurement. Therefore, temperature control for the CCD solid-state imaging device 1 to be measured becomes unnecessary,
The measurement device can be reduced in size and simplified. Also, at the time of measurement,
Since the time for stabilizing the CCD solid-state imaging device 1 at a constant temperature is not required, the time required for measurement can be reduced. In the measuring method according to the embodiment shown in FIG. 3, the temperature of the CCD solid-state imaging device 1 to be judged as to whether or not a white spot is defective is detected by the temperature detector 6, and a detection signal (for example, a detection voltage) is detected. Is fed back to the timing generator 2 to control the charge accumulation time in the imaging unit according to the detected temperature. If the temperature is high, the charge storage time is shortened. And
The accumulation time is controlled in accordance with the temperature of the CCD solid-state imaging device 1, and the output signal obtained from the output terminal t is compared with the judgment reference value at the reference temperature of the judgment reference value generation unit 7, and the comparator 8
Is determined based on the magnitude of the output obtained from. According to this measuring method, the charge accumulation time is controlled in accordance with the temperature of the CCD solid-state imaging device 1, so that the output signal obtained at the output terminal t is compared with the judgment reference value at the reference temperature. Therefore, the pass / fail judgment can be made without controlling the temperature of the CCD solid-state imaging device 1 at the time of measurement. Accordingly, temperature control for the CCD solid-state imaging device 1 to be measured is not required, and the measurement device can be reduced in size and simplified. In addition, the time required for stabilizing the CCD solid-state imaging device 1 at a constant temperature during measurement is not required, so that the time required for measurement can be reduced. In the above example, the criterion value, the gain of the gain controller 5, or the charge storage time is controlled in accordance with the temperature of the CCD solid-state image sensor to be measured. , The pass / fail judgment can be made. In the above example, the present invention is applied to the pass / fail judgment of the defect of the white point in the CCD solid-state imaging device. However, the present invention can be applied to the measurement of other characteristics and defects (pass / fail judgment). Furthermore, in the above example, the present invention is applied to the measurement of the CCD solid-state image sensor, but the present invention can also be applied to the measurement of temperature-dependent characteristics and defects of other semiconductor elements. According to the method for measuring a solid-state image sensor according to the present invention, temperature control of a heater or the like is not required for the solid-state image sensor to be measured, so that the measuring apparatus can be reduced in size and simplified. Becomes possible. Also, the solid to be measured as in the conventional
There is no need to wait for a time for the temperature of the image sensor to reach a constant temperature, that is, a time parallel to the temperature, and the measurement time can be reduced. Therefore, the characteristics of the solid-state imaging device and the pass / fail judgment of defects
Can be easily performed. In measuring the characteristics, defects, etc. of the solid-state imaging device, the reference value, the gain of the gain controller, or the charge accumulation time are controlled according to the temperature at the time of measurement, and the output signal and the reference value are measured. Since measurement is performed in comparison, measurement can be performed easily and quickly.
【図面の簡単な説明】
【図１】本発明に係るＣＣＤ固体撮像素子の測定方法の
一例を示す構成図である。
【図２】本発明に係るＣＣＤ固体撮像素子の測定方法の
他の例を示す構成図である。
【図３】本発明に係るＣＣＤ固体撮像素子の測定方法の
他の例を示す構成図である。
【図４】本発明に係るＣＣＤ固体撮像素子の測定方法に
用いられる温度検出部分の構成図である。
【符号の説明】
１ ＣＣＤ固体撮像素子
２ タイミングジェネレータ
３ 駆動回路
４ サンプルホールド回路
５ ゲインコントローラ
６ 温度検出器
７ 基準値発生部
８ 比較器BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration diagram showing an example of a method for measuring a CCD solid-state imaging device according to the present invention. FIG. 2 is a configuration diagram showing another example of a method for measuring a CCD solid-state imaging device according to the present invention. FIG. 3 is a configuration diagram showing another example of a method for measuring a CCD solid-state imaging device according to the present invention. FIG. 4 is a configuration diagram of a temperature detection portion used in a method for measuring a CCD solid-state imaging device according to the present invention. [Description of Signs] 1 CCD solid-state imaging device 2 Timing generator 3 Drive circuit 4 Sample hold circuit 5 Gain controller 6 Temperature detector 7 Reference value generator 8 Comparator
Claims (1)
して該固体撮像素子の特性、欠陥を測定する固体撮像素
子の測定方法であって、 固体撮像素子の出力側に設けられたゲインコントローラ
と、前記固体撮像素子を駆動するための駆動パルス発生
部及び基準値発生部を有し、 前記固体撮像素子の温度に応じた制御信号を前記ゲイン
コントローラ、駆動パルス発生部又は基準値発生部の少
なくとも１つに与え、ゲイン、蓄積期間又は基準値の少
なくとも１つを制御して前記特性、欠陥の測定を行うこ
とを特徴とする固体撮像素子の測定方法。(57) [Claim 1] A solid-state imaging device for measuring characteristics and defects of the solid-state imaging device by comparing an output signal of the solid-state imaging device with a reference value.
A method of measuring a child has a gain controller provided at the output side of the solid-state imaging device, a driving pulse generation unit for driving the solid-state image sensor and the reference value generator, the temperature of the solid-state imaging device Is supplied to at least one of the gain controller, the drive pulse generator or the reference value generator, and at least one of the gain, the accumulation period or the reference value is controlled to measure the characteristic and the defect. <br/> A method for measuring a solid-state imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26561895A JP3384209B2 (en) | 1995-10-13 | 1995-10-13 | Measurement method for solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26561895A JP3384209B2 (en) | 1995-10-13 | 1995-10-13 | Measurement method for solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09113574A JPH09113574A (en) | 1997-05-02 |
| JP3384209B2 true JP3384209B2 (en) | 2003-03-10 |
Family
ID=17419644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26561895A Expired - Fee Related JP3384209B2 (en) | 1995-10-13 | 1995-10-13 | Measurement method for solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3384209B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3984936B2 (en) | 2003-08-08 | 2007-10-03 | キヤノン株式会社 | Imaging apparatus and imaging method |
| CN100357750C (en) * | 2004-09-30 | 2007-12-26 | 中国科学院长春光学精密机械与物理研究所 | Device for detecting linear array charge coupling device functionality |
| WO2006129460A1 (en) * | 2005-06-03 | 2006-12-07 | Konica Minolta Holdings, Inc. | Imaging device |
-
1995
- 1995-10-13 JP JP26561895A patent/JP3384209B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09113574A (en) | 1997-05-02 |
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