JP3370720B2

JP3370720B2 - Magnetic recording medium and magnetic recording device

Info

Publication number: JP3370720B2
Application number: JP04884793A
Authority: JP
Inventors: 敦中村; 義幸平山; 信幸稲葉; 好文松田; 正昭二本
Original assignee: Hitachi Ltd
Current assignee: Hitachi Ltd
Priority date: 1993-03-10
Filing date: 1993-03-10
Publication date: 2003-01-27
Anticipated expiration: 2018-01-27
Also published as: JPH06259743A

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、高密度磁気記録に適す
る磁性膜を有する磁気記録媒体及びそれを用いた磁気記
録装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium having a magnetic film suitable for high density magnetic recording and a magnetic recording device using the same.

【０００２】[0002]

【従来の技術】高密度磁気記録に適する記録媒体とし
て、非磁性基板上に形成した連続磁性膜を有する磁気記
録媒体が用いられている。磁性膜は例えばＣｏのような
強磁性金属を主成分とする合金の薄膜であり、スパッタ
リング法、真空蒸着法、化学めっき法等の方法により形
成される。磁気記録媒体としての特性は、この磁性膜の
微細構造と密接な関係があることが知られており、磁気
記録特性を向上させるために磁性膜の改良が試みられて
いる。2. Description of the Related Art As a recording medium suitable for high density magnetic recording, a magnetic recording medium having a continuous magnetic film formed on a non-magnetic substrate is used. The magnetic film is a thin film of an alloy containing a ferromagnetic metal such as Co as a main component, and is formed by a method such as a sputtering method, a vacuum deposition method, a chemical plating method, or the like. It is known that the characteristics as a magnetic recording medium are closely related to the fine structure of the magnetic film, and attempts have been made to improve the magnetic film in order to improve the magnetic recording characteristics.

【０００３】一般に磁気記録媒体に用いられるＣｏ合金
の結晶構造は、単体のＣｏと同様のｈ．ｃ．ｐ．（六方
最密充填）構造であり、ｃ軸の方向（〔０００１〕方
向）に磁化容易軸を持つ。面内磁気記録媒体としてＣｏ
合金を用いる場合には、個々の結晶粒の磁化容易軸を磁
性膜面内に向かせるか、あるいは少なくとも磁性膜面に
平行な成分を持たせることが必要となる。またその結果
として高保磁力、高角形比といった磁気記録媒体として
好ましい磁気特性が得られるようになる。The crystal structure of a Co alloy generally used for a magnetic recording medium has the same h. c. p. It is a (hexagonal close-packed) structure and has an easy axis of magnetization in the direction of the c-axis ([0001] direction). Co as an in-plane magnetic recording medium
When an alloy is used, it is necessary to direct the easy axis of magnetization of each crystal grain to the inside of the magnetic film surface, or at least have a component parallel to the magnetic film surface. Further, as a result, magnetic properties preferable for the magnetic recording medium, such as high coercive force and high squareness ratio, can be obtained.

【０００４】そのために、磁牲膜と基板との間にｂ．
ｃ．ｃ．（体心立方）構造を持つ金属の下地膜を設ける
ことが試みられている。例えば、特開昭６２−２５７６
１８にはＣｏ−Ｐｔ合金磁性膜の下地膜にＣｒ−Ｖ合金
又はＣｒ−Ｆｅ合金を用いる方法が、特開平１−２２０
２１７にはＣｏ合金磁性膜の下地膜にＣｒを用いる方法
が開示されている。いずれもｈ．ｃ．ｐ．磁性膜の｛１
１２０｝面がｂ．ｃ．ｃ．下地膜の｛１００｝面上にエ
ピタキシャル成長することを利用するもので、＜１００
＞優先配向したｂ．ｃ．ｃ．下地膜を用いれば膜面内に
磁化容易軸を持つような＜１１２０＞優先配向したｈ．
ｃ．ｐ．磁性膜が得られることが示されている。Therefore, between the magnetic film and the substrate, b.
c. c. Attempts have been made to provide a metal underlayer having a (body centered cubic) structure. For example, Japanese Patent Laid-Open No. 62-2576
No. 18 discloses a method of using a Cr—V alloy or a Cr—Fe alloy as an underlayer of a Co—Pt alloy magnetic film.
217 discloses a method of using Cr for the underlayer film of the Co alloy magnetic film. Both are h. c. p. Magnetic film {1
120} plane is b. c. c. It utilizes the epitaxial growth on the {100} plane of the underlayer film.
> Preferred orientation b. c. c. If an underlayer is used, the <1120> preferentially oriented h.
c. p. It has been shown that a magnetic film is obtained.

【０００５】一方、＜１００＞優先配向したｂ．ｃ．
ｃ．下地膜を得る方法については、上記特開平１−２２
０２１７に、ＮｉＰ膜を被着したＡｌ基板上に、基板温
度を１５０℃以上に高めて、厚さ５〜２０ｎｍの薄いＣ
ｒ膜を毎分１００〜４００ｎｍの高速スパッタリングで
形成する方法が述べられている。またジャーナル・オブ
・アプライド・フィジックス、６７巻、４９１３〜４９
１５頁（１９９０年）（J．Appl．Phys．vol 67，p4913
〜4915（1990））に記載のデュアンら（Ｓ．Ｌ．Ｄｕａ
ｎｅｔａｌ）の論文には、ガラス基板上に、基板温
度を２００℃以上に高めて厚さ１７０ｎｍのＣｒ膜を形
成すると＜１００＞優先配向した膜が得られることが示
されている。On the other hand, b. c.
c. For the method of obtaining the base film, see JP-A 1-22
On 0217, on the Al substrate on which the NiP film was deposited, the substrate temperature was raised to 150 ° C. or higher, and a thin C having a thickness of 5 to 20 nm was formed.
A method of forming an r film by high speed sputtering of 100 to 400 nm per minute is described. Also, Journal of Applied Physics, 67, 4913-49.
Page 15 (1990) (J. Appl. Phys. Vol 67, p4913
~ 4915 (1990), Duane et al. (SL Dua).
(N et al), it is shown that a <100> preferentially oriented film is obtained by forming a 170 nm thick Cr film on a glass substrate by raising the substrate temperature to 200 ° C. or higher.

【０００６】[0006]

【発明が解決しようとする課題】前述のように、面内磁
気記録媒体にＣｏ合金を用いる場合、個々の結晶粒の磁
化容易軸を膜面内に向けるために、＜１００＞優先配向
したｂ．ｃ．ｃ．下地膜を設けることが有効である。し
かし一般にｂ．ｃ．ｃ．構造を持つ金属、合金は、＜１
１０＞優先配向しやすい性質を持っている。このため上
記金属、合金を基板上に直接形成した場合、成膜条件を
最適化するだけで十分に＜１００＞優先配向した薄膜を
得ることは容易ではないという問題があった。As described above, when a Co alloy is used for the in-plane magnetic recording medium, <100> preferentially oriented b in order to direct the easy axis of magnetization of individual crystal grains to the film plane. ． c. c. It is effective to provide a base film. But generally b. c. c. <1 for structural metals and alloys
10> It has the property of being preferentially oriented. Therefore, when the above metal or alloy is directly formed on the substrate, there is a problem that it is not easy to obtain a thin film having a <100> preferential orientation by simply optimizing the film forming conditions.

【０００７】本発明の目的は、磁性膜の結晶配向性が向
上した磁気記録媒体及びそれを用いた磁気記録装置を提
供することにある。An object of the present invention is to provide a magnetic recording medium in which the crystal orientation of a magnetic film is improved and a magnetic recording device using the same.

【０００８】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明の磁気記録媒体は、非磁性基板と、この非磁
性基板上に、直接又はなんらかの下地膜を介して設けら
れた２層の下地膜と、この２層の下地膜上に設けられた
磁性膜とを有し、磁性膜は、六方最密充填構造を持ち、
２層の下地膜のうち、磁性膜の直下に設けられた第１下
地膜は、体心立方構造を持ち、第１下地膜の直下に設け
られた第２下地膜は、ＮａＣｌ型結晶構造を持つように
構成する。In order to achieve the above object, a magnetic recording medium of the present invention comprises a non- magnetic substrate and two layers provided on the non-magnetic substrate directly or through some underlayer. And a magnetic film provided on the two-layer undercoat film, the magnetic film having a hexagonal close-packed structure,
Of the two-layer underlayer film, the first underlayer film provided directly below the magnetic film has a body-centered cubic structure, and the second underlayer film provided immediately below the first underlayer film has a NaCl-type crystal structure. Configure to have .

【０００９】図１に本発明の磁気記録媒体の一例の模式
図を示して説明する。ｈ．ｃ．ｐ．構造を持つ磁性膜１
２が、ｂ．ｃ．ｃ．構造を持つ第１下地膜１３上に形成
されている。この第１下地膜１３は、ＮａＣｌ型結晶構
造を持つ第２下地膜１４上に形成されている。第２下地
膜は非磁性基板１５上に直接又はなんらかの下地膜を介
して形成されている。磁性膜１２の上には保護膜１１が
形成されることが好ましい。FIG. 1 shows a schematic diagram of an example of the magnetic recording medium of the present invention. h. c. p. Magnetic film with structure 1
2 is b. c. c. It is formed on the first base film 13 having a structure. The first base film 13 is formed on the second base film 14 having a NaCl type crystal structure. The second base film is formed on the non-magnetic substrate 15 directly or via some base film. The protective film 11 is preferably formed on the magnetic film 12.

【００１０】磁性膜は、優先配向方位が＜１１２０＞で
あり、第１下地膜及び第２下地膜は、いずれも優先配向
方位が＜１００＞であることが好ましい。また、第１下
地膜及び第２下地膜は、いずれも非磁性材料からなるこ
とが好ましい。It is preferable that the magnetic film has a preferential orientation of <1120>, and the first underlayer and the second underlayer both have a preferential orientation of <100>. Further, it is preferable that both the first underlayer film and the second underlayer film are made of a non-magnetic material.

【００１１】さらに、磁性膜は、Ｃｏ又はＣｏを主成分
とする合金からなることが好ましい。Ｃｏを主成分とす
る合金は、従来から種々の合金が磁性膜として用いられ
ており、本発明においてもそのような合金を用いること
ができる。磁性膜の厚さは１０〜１００ｎｍの範囲であ
ることが実用的に望ましい。磁性膜は、真空蒸着法、ス
パッタリング法等の方法で形成することができる。Further, the magnetic film is preferably made of Co or an alloy containing Co as a main component. As the alloy containing Co as a main component, various alloys have been conventionally used as the magnetic film, and such alloy can be used in the present invention. It is practically desirable that the thickness of the magnetic film be in the range of 10 to 100 nm. The magnetic film can be formed by a method such as a vacuum vapor deposition method or a sputtering method.

【００１２】第１下地膜の材料としては、Ｃｒ、Ｍｏ、
Ｗ、Ｖ、Ｎｂ、Ｔａ及びこれらの元素を主成分とする合
金からなる群から選ばれた少なくとも一種の材料を用い
ることが好ましい。もちろん、第１下地膜の材料は、こ
れらの材料に限定されるものではなく、ｂ．ｃ．ｃ．構
造を持つ他の金属、合金を用いることも可能である。第
１下地膜の厚さは２〜３００ｎｍの範囲にあることが実
用的に望ましい。第１下地膜も磁性膜と同様に真空蒸着
法、スパッタリング法等の方法で形成することができ
る。The material of the first base film is Cr, Mo,
It is preferable to use at least one material selected from the group consisting of W, V, Nb, Ta, and alloys containing these elements as main components. Of course, the material of the first base film is not limited to these materials, and b. c. c. It is also possible to use another metal or alloy having a structure. It is practically desirable that the thickness of the first base film is in the range of 2 to 300 nm. The first underlayer film can also be formed by a method such as a vacuum vapor deposition method or a sputtering method as with the magnetic film.

【００１３】第２下地膜の材料としては、ハロゲン化ア
ルカリ、すなわち、アルカリ金属元素（Ｌｉ、Ｎａ、
Ｋ、Ｒｂ）とハロゲン元素（Ｆ、Ｃｌ、Ｂｒ、Ｉ）の化
合物、ＭｇＯ、ＨｆＣ、ＮｂＣ、ＴａＣ、ＴｉＣ、Ｖ
Ｃ、ＺｒＣ、ＴｉＮ、ＶＮ、ＺｒＮ及びこれらの無機化
合物を主成分とする混晶からなる群から選ばれた少なく
とも一種の材料を用いることが好ましい。第２下地膜の
材料についても、これらの材料に限定されるものではな
く、ＮａＣｌ型結晶構造を持つ他の化合物、混晶を用い
ることも可能である。第２下地膜の厚さは、２〜３００
ｎｍの範囲にあることが実用的に望ましい。第２下地膜
は、真空蒸着法、スパッタリング法、化学気相成長法、
イオンプレーティング法等の方法で形成することができ
る。The material of the second underlayer is an alkali halide, that is, an alkali metal element (Li, Na,
K, Rb) and a halogen element (F, Cl, Br, I) compound, MgO, HfC, NbC, TaC, TiC, V
It is preferable to use at least one material selected from the group consisting of C, ZrC, TiN, VN, ZrN and a mixed crystal containing an inorganic compound as a main component. The material of the second base film is not limited to these materials, and other compounds having a NaCl type crystal structure or mixed crystals can be used. The thickness of the second base film is 2 to 300.
It is practically desirable to be in the range of nm. The second base film is formed by vacuum vapor deposition, sputtering, chemical vapor deposition,
It can be formed by a method such as an ion plating method.

【００１４】磁性膜がＣｏ又はＣｏを主成分とする合金
からなるとき、第１下地膜は、Ｃｒ又はＣｒを主成分と
する合金からなることが好ましい。また、第１下地膜が
Ｃｒ又はＣｒを主成分とする合金からなるとき、第２下
地膜は、ＭｇＯ、ＬｉＦ又はこれらの無機化合物を主成
分とする混晶からなることが好ましい。When the magnetic film is made of Co or an alloy containing Co as a main component, the first underlayer is preferably made of Cr or an alloy containing Cr as a main component. When the first undercoating film is made of Cr or an alloy containing Cr as a main component, the second undercoating film is preferably made of MgO, LiF or a mixed crystal containing these inorganic compounds as a main component.

【００１５】また、本発明の磁気記録装置は、上記のよ
うな磁気記録媒体、この磁気記録媒体を保持する保持
具、磁気記録媒体の磁性膜上に配置され、情報を記録、
再生するための磁気ヘッド、磁気ヘッドと磁気記録媒体
の相対的位置を移動させるための移動手段及びこれらを
制御するための制御手段とから構成される。The magnetic recording device of the present invention is arranged on the magnetic recording medium as described above, a holder for holding the magnetic recording medium, and a magnetic film of the magnetic recording medium to record information.
It is composed of a magnetic head for reproducing, a moving means for moving the relative position of the magnetic head and the magnetic recording medium, and a control means for controlling these.

【００１６】[0016]

【作用】ｈ．ｃ．ｐ．構造を持つ磁性膜のｃ軸を膜面内
に向かせる場合、膜面に平行になるべき低指数の結晶面
は図２に示すように｛１１２０｝面か｛１１００｝面が
考えられる。このうち｛１１２０｝面を膜面に平行にす
るためには、＜１００＞優先配向したｂ．ｃ．ｃ．構造
を持つ下地膜を用いるとよいことが知られている。ｈ．
ｃ．ｐ．構造の｛１１２０｝面とｂ．ｃ．ｃ．構造の
｛１００｝面の整合関係を図３に示す。ｂ．ｃ．ｃ．構
造を持つ非磁性下地膜材料にはＣｒ、Ｍｏ、Ｗ、Ｖ、Ｎ
ｂ、Ｔａ及びこれらの元素を主成分とする合金が考えら
れるが、その｛１００｝面上での原子間距離が、上記磁
性膜材料の｛１１２０｝面内での原子間距離と整合する
ように選択するとよい。具体的には図３から理解される
ように、下記式１と式２がなるべく近い値をとるように
する。[Operation] h. c. p. When the c-axis of a magnetic film having a structure is oriented in the film plane, the low-index crystal plane that should be parallel to the film plane may be the {1120} plane or the {1100} plane as shown in FIG. Among them, in order to make the {1120} plane parallel to the film surface, <100> preferential orientation b. c. c. It is known that it is preferable to use a base film having a structure. h.
c. p. {1120} plane of the structure and b. c. c. The matching relationship on the {100} plane of the structure is shown in FIG. b. c. c. Cr, Mo, W, V, N is used for the non-magnetic underlayer material having a structure.
b, Ta, and alloys containing these elements as main components are conceivable, but their interatomic distances on the {100} plane should be matched with the interatomic distances on the {1120} plane of the above magnetic film material. It is recommended to select. Specifically, as understood from FIG. 3, the following equations 1 and 2 are set to values as close as possible.

【００１７】ａ（ｂｃｃ）×２ ……（１） √（ｃ（ｈｃｐ）²＋ａ（ｈｃｐ）²×３） ……（２）ここに、ａ（ｂｃｃ）はｂ．ｃ．ｃ．構造のａ軸の格子
定数、ｃ（ｈｃｐ）はｈ．ｃ．ｐ．構造のｃ軸の格子定
数、ａ（ｈｃｐ）はｈ．ｃ．ｐ．構造のａ軸の格子定数
である。式１と式２の差は、±１０％以下が好ましく、
±４％以下がより好ましい。A (bcc) × 2 (1) √ (c (hcp) ² + a (hcp) ² × 3) (2) where a (bcc) is b. c. c. The lattice constant of the a-axis of the structure, c (hcp) is h. c. p. The c-axis lattice constant of the structure, a (hcp) is h. c. p. It is the lattice constant of the a-axis of the structure. The difference between Expression 1 and Expression 2 is preferably ± 10% or less,
± 4% or less is more preferable.

【００１８】ところがｂ．ｃ．ｃ．結晶は一般に＜１１
０＞優先配向しやすい性質を持っている。このため基板
上に直接形成して＜１００＞優先配向させることは容易
ではない。However, b. c. c. Crystals are generally <11
0> It has the property of preferential orientation. Therefore, it is not easy to directly form it on the substrate and perform <100> preferential orientation.

【００１９】そこで本発明では、上記ｂ．ｃ．ｃ．下地
膜（第１下地膜）の配向性を、その直下に設けたＮａＣ
ｌ型結晶構造を持つ第２下地膜によって制御する。これ
は図４に示すように、ｂ．ｃ．ｃ．構造の｛１００｝面
が、ＮａＣｌ型結晶構造の｛１００｝面上にエピタキシ
ャル成長しやすいことを利用するものである。さらにＮ
ａＣｌ型結晶は一般に＜１００＞優先配向しやすい性質
を持っている。従ってその表面にｂ．ｃ．ｃ．結晶をエ
ピタキシャル成長させることによって、十分に＜１００
＞優先配向したｂ．ｃ．ｃ．結晶の膜を得ることができ
る。Therefore, in the present invention, the above b. c. c. The orientation of the underlayer film (first underlayer film) is controlled by the NaC provided directly below it.
It is controlled by the second base film having the l-type crystal structure. This is as shown in FIG. c. c. This utilizes the fact that the {100} plane of the structure is easily epitaxially grown on the {100} plane of the NaCl type crystal structure. Furthermore N
Generally, an aCl type crystal has a property of being easily oriented in <100> preferential orientation. Therefore, b. c. c. By epitaxially growing the crystal, the
> Preferred orientation b. c. c. A crystalline film can be obtained.

【００２０】ＮａＣｌ型結晶構造を持つ非磁性下地膜材
料には、アルカリ金属元素（Ｌｉ、Ｎａ、Ｋ、Ｒｂ）と
ハロゲン元素（Ｆ、Ｃｌ、Ｂｒ、Ｉ）のつくるハロゲン
化アルカリ、ＭｇＯ、ＨｆＣ、ＮｂＣ、ＴａＣ、Ｔｉ
Ｃ、ＶＣ、ＺｒＣ、ＴｉＮ、ＶＮ、ＺｒＮ及びこれらの
無機化合物を主成分とする混晶等が考えられるが、特に
｛１００｝面内での原子間距離が、上記ｂ．ｃ．ｃ．第
１下地膜の｛１００｝面内での原子間距離と整合するよ
うに選択するとよい。具体的には図４から理解されるよ
うにに、下記式３と式４がなるべく近い値をとるように
する。The non-magnetic underlayer material having a NaCl type crystal structure includes alkali halides (Li, Na, K, Rb) and halogen elements (F, Cl, Br, I), alkali halides, MgO and HfC. , NbC, TaC, Ti
C, VC, ZrC, TiN, VN, ZrN, and mixed crystals containing these inorganic compounds as the main components are conceivable. Particularly, the interatomic distance in the {100} plane is the same as the above b. c. c. It may be selected so as to match the interatomic distance in the {100} plane of the first underlayer. Specifically, as understood from FIG. 4, the following equations 3 and 4 are set to values as close as possible.

【００２１】ａ（ｂｃｃ）×√２ ……（３）ａ（ＮａＣｌ） ……（４）ここに、ａ（ｂｃｃ）は上述の意味を有し、ａ（ＮａＣ
ｌ）はＮａＣｌ型結晶構造のａ軸の格子定数である。式
３と式４の差は、±２０％以下が好ましく、±５％以下
がより好ましい。A (bcc) × √2 (3) a (NaCl) (4) where a (bcc) has the above-mentioned meaning, and a (NaC)
l) is the a-axis lattice constant of the NaCl type crystal structure. The difference between Expression 3 and Expression 4 is preferably ± 20% or less, and more preferably ± 5% or less.

【００２２】十分に＜１００＞優先配向させた上記ｂ．
ｃ．ｃ．第１下地膜上にｈ．ｃ．ｐ．磁性膜をエピタキ
シャル成長させると、＜１１２０＞優先配向し、個々の
結晶粒の磁化容易軸が膜面内に向いた磁性膜が得られ
る。このようにして得た磁性膜は、基板上にｂ．ｃ．
ｃ．下地膜のみを形成し、その上にｈ．ｃ．ｐ．磁性膜
を形成した場合に比較して、膜面内方向でより高い保磁
力と角形比を示し、より高密度の記録再生が可能な面内
磁気記録媒体として用いることができる。The above-mentioned b.
c. c. H. c. p. When the magnetic film is epitaxially grown, a magnetic film having a <1120> preferential orientation, in which the easy axis of magnetization of each crystal grain is oriented in the film surface, is obtained. The magnetic film thus obtained is b.p. c.
c. Only the base film is formed, and h. c. p. Compared with the case where a magnetic film is formed, it exhibits a higher coercive force and squareness in the in-plane direction of the film, and can be used as an in-plane magnetic recording medium capable of recording and reproducing at higher density.

【００２３】[0023]

【実施例】以下、本発明の実施例を図面を用いて説明す
る。〈実施例１〉直径３．５インチのガラス基板を用い、図
５に示すような断面構造を持つ磁気記録媒体を、高周波
マグネトロンスパッタリング法によって作製した。ガラ
ス基板５５の両面に、ＭｇＯ下地膜５４、５４’、Ｃｒ
下地膜５３、５３’、Ｃｏ合金磁性膜５２、５２’、カ
ーボン保護膜５１、５１’をこの順序で形成する。な
お、ＭｇＯ下地膜５４、５４’はＮａＣｌ型結晶構造で
あり、Ｃｒ下地膜５３、５３’はｂ．ｃ．ｃ．構造であ
り、Ｃｏ合金磁性膜５２、５２’はｈ．ｃ．ｐ．構造で
ある。Embodiments of the present invention will be described below with reference to the drawings. Example 1 Using a glass substrate having a diameter of 3.5 inches, a magnetic recording medium having a sectional structure as shown in FIG. 5 was produced by a high frequency magnetron sputtering method. On both surfaces of the glass substrate 55, the MgO base films 54, 54 ′, Cr
The base films 53 and 53 ', the Co alloy magnetic films 52 and 52', and the carbon protective films 51 and 51 'are formed in this order. The MgO base films 54 and 54 'have a NaCl type crystal structure, and the Cr base films 53 and 53' are b. c. c. The Co alloy magnetic films 52 and 52 ′ are h. c. p. It is a structure.

【００２４】ＭｇＯ下地膜５４、５４’は混合比９／１
のアルゴン／酸素混合ガスを用い、ガスの圧力は０．５
〜１．５Ｐａ、基板温度３００℃、成膜速度毎分３〜５
ｎｍの条件で形成した。Ｃｒ下地膜５３、５３’、Ｃｏ
合金磁性膜５２、５２’及びカーボン保護膜５１、５
１’の成膜にはアルゴンガスを用い、ガスの圧力０．７
Ｐａ、基板温度１５０℃、成膜速度毎分５０ｎｍの条件
で形成した。磁性膜５２、５２’の形成に用いるターゲ
ットの組成はＣｏ−１５ａｔ．％Ｃｒ−８ａｔ．％Ｐｔ
とした。各膜の膜厚は、ＭｇＯ下地膜が５０ｎｍ、Ｃｒ
下地膜が５０ｎｍ、Ｃｏ合金磁性膜が３０ｎｍ、カーボ
ン保護膜が１０ｎｍとした。上記の膜形成はすべて同一
の真空槽内で真空を破ることなく連続して行った。The MgO base films 54 and 54 'have a mixing ratio of 9/1.
Argon / oxygen mixed gas is used, and the gas pressure is 0.5
~ 1.5 Pa, substrate temperature 300 ° C, film formation rate 3-5 per minute
It was formed under the condition of nm. Cr base film 53, 53 ', Co
Alloy magnetic films 52, 52 'and carbon protective films 51, 5
Argon gas was used for the film formation of 1 ', and the gas pressure was 0.7.
The film was formed under the conditions of Pa, substrate temperature of 150 ° C., and film formation rate of 50 nm / min. The composition of the target used for forming the magnetic films 52 and 52 ′ is Co-15 at. % Cr-8 at. % Pt
And The film thickness of each film is 50 nm for the MgO base film and Cr.
The base film was 50 nm, the Co alloy magnetic film was 30 nm, and the carbon protective film was 10 nm. The above film formation was continuously performed in the same vacuum chamber without breaking the vacuum.

【００２５】作製した試料の結晶配向をＸ線回折によっ
て、磁気特性を試料振動型磁力計（ＶＳＭ）を用いてそ
れぞれ測定した。その結果本実施例の磁気記録媒体は、
ＭｇＯ下地膜を設けない他は全く同様の条件で作製し
た磁気記録媒体と比較して、Ｃｒ下地膜の＜１００＞配
向、Ｃｏ合金磁性膜の＜１１２０＞配向ともに著しく改
善され、膜面内方向の保磁力が９．３％（１４０Ｏｅ）
向上し、角形比が１１％（０．０９）向上した。The crystal orientation of the prepared sample was measured by X-ray diffraction, and the magnetic characteristics were measured by using a sample vibrating magnetometer (VSM). As a result, the magnetic recording medium of the present embodiment was
Compared to the magnetic recording medium prepared under exactly the same conditions except that the MgO underlayer was not provided, both the <100> orientation of the Cr underlayer and the <1120> orientation of the Co alloy magnetic film were significantly improved. Has a coercive force of 9.3% (140 Oe)
The squareness ratio was improved by 11% (0.09).

【００２６】なお、この磁気記録媒体のＣｏ合金磁性膜
とＣｒ下地膜とＭｇＯ下地膜のそれぞれの結晶構造から
計算される前記式１と式２の差は、−３．８％であり、
式３と式４の差は、−３．２％である。The difference between the above equations 1 and 2 calculated from the respective crystal structures of the Co alloy magnetic film, the Cr underlayer film and the MgO underlayer film of this magnetic recording medium is -3.8%,
The difference between Equation 3 and Equation 4 is -3.2%.

【００２７】〈実施例２〉直径３．５インチのガラス基
板を用い、図６に示すような断面構造を持つ磁気記録媒
体を、高周波マグネトロンスパッタリング法によって作
製した。ガラス基板６５の両面に、ＬｉＦ下地膜６４、
６４’、Ｃｒ下地膜６３、６３’、Ｃｏ合金磁性膜６
２、６２’、カーボン保護膜６１、６１’をこの順序で
形成する。なお、ＬｉＦ下地膜６４、６４’はＮａＣｌ
型結晶構造であり、Ｃｒ下地膜６３、６３’はｂ．ｃ．
ｃ．構造であり、Ｃｏ合金磁性膜６２、６２’はｈ．
ｃ．ｐ．構造である。Example 2 Using a glass substrate having a diameter of 3.5 inches, a magnetic recording medium having a sectional structure as shown in FIG. 6 was produced by a high frequency magnetron sputtering method. The LiF base film 64 is formed on both surfaces of the glass substrate 65.
64 ', Cr base film 63, 63', Co alloy magnetic film 6
2, 62 'and carbon protective films 61, 61' are formed in this order. In addition, the LiF base films 64 and 64 ′ are formed of NaCl.
Type crystal structure, the Cr underlayers 63 and 63 ′ are formed of b. c.
c. The structure of the Co alloy magnetic films 62 and 62 ′ is h.
c. p. It is a structure.

【００２８】ＬｉＦ下地膜６４、６４’はアルゴンガス
を用い、ガスの圧力は０．５〜１．５Ｐａ、基板温度３
００℃、成膜速度毎分３〜５ｎｍの条件で形成した。Ｃ
ｒ下地膜６３、６３’、Ｃｏ合金磁性膜６２、６２’及
びカーボン保護膜６１、６１’の成膜は実施例１と同様
の条件で行った。磁性膜６２、６２’の形成に用いるタ
ーゲットの組成はＣｏ−１２ａｔ．％Ｃｒ−２ａｔ．％
Ｔａとした。各膜の膜厚は、ＬｉＦ下地膜が５０ｎｍ、
Ｃｒ下地膜が５０ｎｍ、Ｃｏ合金磁性膜が３０ｎｍ、カ
ーボン保護膜が１０ｎｍとした。上記の膜形成はすべて
同一の真空槽内で真空を破ることなく連続して行った。ArF gas is used for the LiF base films 64 and 64 ', the gas pressure is 0.5 to 1.5 Pa, and the substrate temperature is 3
It was formed under the conditions of 00 ° C. and a film forming rate of 3 to 5 nm per minute. C
The underlayer films 63 and 63 ′, the Co alloy magnetic films 62 and 62 ′, and the carbon protective films 61 and 61 ′ were formed under the same conditions as in Example 1. The composition of the target used to form the magnetic films 62 and 62 'is Co-12 at. % Cr-2 at. %
It was set to Ta. The film thickness of each film is 50 nm for the LiF base film,
The Cr underlayer film was 50 nm, the Co alloy magnetic film was 30 nm, and the carbon protective film was 10 nm. The above film formation was continuously performed in the same vacuum chamber without breaking the vacuum.

【００２９】作製した試料の結晶配向をＸ線回折によっ
て、磁気特性を試料振動型磁力計（ＶＳＭ）を用いてそ
れぞれ測定した。その結果、本実施例の磁気記録媒体
は、ＬｉＦ下地膜を設けない他は全く同様の条件で作製
した磁気記録媒体と比較して、Ｃｒ下地膜の＜１００＞
配向、Ｃｏ合金磁性膜の＜１１２０＞配向ともに著しく
改善され、膜面内方向の保磁力が１２％（１３０Ｏｅ）
向上し、角形比が９．９％（０．０８）向上した。The crystal orientation of the produced sample was measured by X-ray diffraction, and the magnetic characteristics were measured by using a sample vibrating magnetometer (VSM). As a result, the magnetic recording medium of the present example has a Cr underlayer <100> as compared with the magnetic recording medium produced under exactly the same conditions except that the LiF underlayer is not provided.
Both the orientation and the <1120> orientation of the Co alloy magnetic film are significantly improved, and the coercive force in the in-plane direction is 12% (130 Oe).
The squareness ratio was improved by 9.9% (0.08).

【００３０】さらに上記実施例においてＣｒ下地膜に代
えてＶ、Ｍｏ、Ｗ又はＣｒ−３ａｔ．％Ｓｉ合金を用い
た他は全く同様の磁気記録媒体を作成した。これらの各
磁気記録媒体についても、ＬｉＦ下地膜を設けないそれ
ぞれの比較例に比べてｂ．ｃ．ｃ．下地膜の＜１００＞
配向、Ｃｏ合金磁性膜の＜１１２０＞配向ともに改善が
認められ、保磁力、角形比も向上した。これらの結果を
表１に示す。Further, in the above-mentioned embodiment, V, Mo, W or Cr-3 at. A magnetic recording medium was prepared in exactly the same manner except that a% Si alloy was used. Also in each of these magnetic recording media, as compared with the respective comparative examples in which the LiF underlayer film is not provided, b. c. c. Underlayer film <100>
Both the orientation and the <1120> orientation of the Co alloy magnetic film were improved, and the coercive force and the squareness ratio were also improved. The results are shown in Table 1.

【００３１】[0031]

【表１】 [Table 1]

【００３２】また、第１下地膜にＮｂ、Ｔａ、Ｃｒ−５
ａｔ．％Ｎｂ合金又はＣｒ−１０ａｔ．％Ｍｏ合金を用
いた磁気記録媒体についても、ＬｉＦ下地膜を設けない
それぞれの比較例に比べ配向性、磁気特性ともに向上す
ることが分かった。In addition, Nb, Ta and Cr-5 are used as the first underlayer.
at. % Nb alloy or Cr-10 at. It was also found that the magnetic recording medium using the% Mo alloy also has improved orientation and magnetic properties as compared with the comparative examples in which the LiF underlayer is not provided.

【００３３】〈実施例３〉直径３．５インチのガラス基
板を用い、実施例２と同様に図６に示すような断面構造
を持つ磁気記録媒体を高周波マグネトロンスパッタリン
グ法によって作製した。ガラス基板６５の両面に、Ｌｉ
Ｆ下地膜６４、６４’、Ｃｒ下地膜６３、６３’、Ｃｏ
合金磁性膜６２、６２’、カーボン保護膜６１、６１’
をこの順序で形成する。Example 3 Using a glass substrate having a diameter of 3.5 inches, a magnetic recording medium having a cross sectional structure as shown in FIG. 6 was produced by the high frequency magnetron sputtering method as in Example 2. On both sides of the glass substrate 65, Li
F underlayer films 64, 64 ', Cr underlayer films 63, 63', Co
Alloy magnetic film 62, 62 ', carbon protective film 61, 61'
Are formed in this order.

【００３４】ＬｉＦ下地膜６４、６４’はアルゴンガス
を用い、ガスの圧力は０．５〜１．５Ｐａ、基板温度３
００℃、成膜速度毎分３〜５ｎｍの条件で形成した。Ｃ
ｒ下地膜６３、６３’、Ｃｏ合金磁性膜６２、６２’及
びカーボン保護膜６１、６１’の成膜は実施例１と同様
の条件で行った。磁性膜６２、６２’の形成に用いるタ
ーゲットの組成は本実施例ではＣｏ−１８ａｔ．％Ｃｒ
−６ａｔ．％Ｐｔとした。各膜の膜厚は、ＬｉＦ下地膜
が５０ｎｍ、Ｃｒ下地膜が５０ｎｍ、Ｃｏ合金磁性膜が
３０ｎｍ、カーボン保護膜が１０ｎｍとした。上記の膜
形成はすべて同一の真空槽内で真空を破ることなく連続
して行った。Argon gas is used for the LiF base films 64 and 64 ', the gas pressure is 0.5 to 1.5 Pa, and the substrate temperature is 3
It was formed under the conditions of 00 ° C. and a film forming rate of 3 to 5 nm per minute. C
The underlayer films 63 and 63 ′, the Co alloy magnetic films 62 and 62 ′, and the carbon protective films 61 and 61 ′ were formed under the same conditions as in Example 1. The composition of the target used for forming the magnetic films 62 and 62 'is Co-18 at. % Cr
-6 at. % Pt. The film thickness of each film was 50 nm for the LiF underlayer film, 50 nm for the Cr underlayer film, 30 nm for the Co alloy magnetic film, and 10 nm for the carbon protective film. The above film formation was continuously performed in the same vacuum chamber without breaking the vacuum.

【００３５】また上記と同様の条件で、ＬｉＦ下地膜の
代わりに、同じＮａＣｌ型結晶構造を持つＮａＦ、Ｔｉ
Ｃ、ＶＣ、ＴｉＮを用いた磁気記録媒体を作製した。作
製した試料の結晶配向をＸ線回折によって、磁気特性を
試料振動型磁力計（ＶＳＭ）を用いてそれぞれ測定し
た。その結果本実施例の磁気記録媒体は、いずれもＮａ
Ｃｌ型結晶構造を持つ下地膜を設けない他は全く同様の
条件で作製した磁気記録媒体と比較して、Ｃｒ下地膜の
＜１００＞配向、Ｃｏ合金磁性膜の＜１１２０＞配向と
もに著しく改善され、膜面内方向の保磁力、角形比の向
上が見られた。これらの結果を表２に示す。Under the same conditions as above, instead of the LiF base film, NaF and Ti having the same NaCl type crystal structure were used.
A magnetic recording medium using C, VC and TiN was produced. The crystal orientation of the produced sample was measured by X-ray diffraction, and the magnetic characteristics were measured by using a sample vibrating magnetometer (VSM). As a result, all of the magnetic recording media of this example had Na
Both the <100> orientation of the Cr underlayer and the <1120> orientation of the Co alloy magnetic film are remarkably improved as compared with the magnetic recording medium manufactured under exactly the same conditions except that the underlayer having the Cl type crystal structure is not provided. , The coercive force in the in-plane direction and the squareness ratio were improved. The results are shown in Table 2.

【００３６】[0036]

【表２】 [Table 2]

【００３７】さらに、第２下地膜にＫＢｒ、ＲｂＩ、Ｈ
ｆＣ、ＮｂＣ、ＴａＣ、ＶＮ、ＺｒＮ、ＺｒＣ、（Ｔ
ｉ，Ｖ）Ｃ又はこれらの無機化合物を主成分とする混晶
を用いた磁気記録媒体を製造した。これらの磁気記録媒
体についても同様の効果があることが分かった。Further, KBr, RbI, and H are formed on the second base film.
fC, NbC, TaC, VN, ZrN, ZrC, (T
A magnetic recording medium using i, V) C or a mixed crystal containing an inorganic compound as a main component was manufactured. It was found that these magnetic recording media also have similar effects.

【００３８】〈実施例４〉図７は、磁気記録装置の一実
施例の模式図である。磁気記録媒体７１は、モータによ
り回転する保持具により保持され、それぞれの各磁性膜
に対応して情報の書き込み、読み出しのための磁気抵抗
効果素子再生複合ヘッド７２が配置されている。この磁
気抵抗効果素子再生複合ヘッド７２の磁気記録媒体７１
に対する位置をアクチュエータ７３とボイスコイルモー
タ７４により移動させる。さらにこれらを制御するため
に記録再生回路７５、位置決め回路７６、インターフェ
ース制御回路７７が設けられている。<Embodiment 4> FIG. 7 is a schematic view of an embodiment of the magnetic recording apparatus. The magnetic recording medium 71 is held by a holder rotated by a motor, and a magnetoresistive effect element reproducing composite head 72 for writing and reading information is arranged corresponding to each magnetic film. The magnetic recording medium 71 of the magnetoresistive effect element reproducing composite head 72
The position with respect to is moved by the actuator 73 and the voice coil motor 74. Further, a recording / reproducing circuit 75, a positioning circuit 76, and an interface control circuit 77 are provided to control these.

【００３９】前記各実施例で製造した磁気記録媒体を用
い、この磁気記録装置に適用したところ、いずれも、高
いＳ／Ｎ比で高密度の記録ができた。When the magnetic recording medium manufactured in each of the above-mentioned Examples was used and applied to this magnetic recording apparatus, all of them were capable of high-density recording with a high S / N ratio.

【００４０】[0040]

【発明の効果】本発明によれば、磁性膜結晶粒の磁化容
易軸を膜面内方向に向かせることによって、面内方向の
保磁力、角形比が向上し、より高密度磁気記録に適した
磁気記録媒体が提供できた。また、高いＳ／Ｎ比で高密
度の記録が可能の磁気記録装置が提供できた。According to the present invention, the coercive force in the in-plane direction and the squareness ratio are improved by orienting the easy axis of magnetization of the crystal grains of the magnetic film in the in-plane direction, which is suitable for higher density magnetic recording. A magnetic recording medium could be provided. Further, a magnetic recording device capable of high density recording with a high S / N ratio could be provided.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の磁気記録媒体の一実施例の断面図であ
る。FIG. 1 is a sectional view of an embodiment of a magnetic recording medium of the present invention.

【図２】ｈ．ｃ．ｐ．構造において、ｃ軸に平行な低指
数面を示す斜視図である。FIG. 2 h. c. p. It is a perspective view which shows the low index surface parallel to a c-axis in a structure.

【図３】ｈ．ｃ．ｐ．構造の｛１１２０｝面とｂ．ｃ．
ｃ．構造の｛１００｝面の整合関係を表す平面図であ
る。FIG. 3 h. c. p. {1120} plane of the structure and b. c.
c. It is a top view showing the matching relation of the {100} plane of a structure.

【図４】ｂ．ｃ．ｃ．構造の｛１００｝面とＮａＣｌ型
構造の｛１００｝面の整合関係を表す平面図である。FIG. 4 b. c. c. It is a top view showing the matching relation of the {100} surface of a structure and the {100} surface of a NaCl type structure.

【図５】本発明の実施例１の磁気記録媒体の断面図であ
る。FIG. 5 is a cross-sectional view of the magnetic recording medium of Example 1 of the present invention.

【図６】本発明の実施例２の磁気記録媒体の断面図であ
る。FIG. 6 is a sectional view of a magnetic recording medium of Example 2 of the present invention.

【図７】本発明の磁気記録装置の一実施例の模式図であ
る。FIG. 7 is a schematic view of an embodiment of a magnetic recording device of the present invention.

【符号の説明】[Explanation of symbols]

１１…保護膜１２…磁性膜１３…第１下地膜１４…第２下地膜１５…非磁性基板５１、５１’、６１、６１’…保護膜５２、５２’、６２、６２’…Ｃｏ合金磁性膜５３、５３’、６３、６３’…Ｃｒ下地膜５４、５４’…ＭｇＯ下地膜５５、６５…ガラス基板６４、６４’…ＬｉＦ下地膜７１…磁気記録媒体７２…磁気抵抗効果素子再生複合ヘッド７３…アクチュエータ７４…ボイスコイルモータ７５…記録再生回路７６…位置決め回路７７…インターフェース制御回路 11 ... Protective film 12 ... Magnetic film 13 ... First base film 14 ... Second base film 15 ... Non-magnetic substrate 51, 51 ', 61, 61' ... protective film 52, 52 ', 62, 62' ... Co alloy magnetic film 53, 53 ', 63, 63' ... Cr base film 54, 54 '... MgO base film 55, 65 ... Glass substrate 64, 64 '... LiF base film 71 ... Magnetic recording medium 72 ... Magnetoresistive element reproducing composite head 73 ... Actuator 74 ... Voice coil motor 75 ... Recording / reproducing circuit 76 ... Positioning circuit 77 ... Interface control circuit

───────────────────────────────────────────────────── フロントページの続き (72)発明者松田好文東京都国分寺市東恋ケ窪１丁目280番地株式会社日立製作所中央研究所内 (72)発明者二本正昭東京都国分寺市東恋ケ窪１丁目280番地株式会社日立製作所中央研究所内 (56)参考文献特開平５−36054（ＪＰ，Ａ) 特開平１−220217（ＪＰ，Ａ) 特開平４−321919（ＪＰ，Ａ) 特開平４−184710（ＪＰ，Ａ) 特開昭62−150516（ＪＰ，Ａ) (58)調査した分野(Int.Cl.⁷，ＤＢ名) G11B 5/66 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Yoshifumi Matsuda 1-280 Higashi-Kengokubo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Masaaki Ninomoto 1-280 Higashi-Kengokubo, Kokubunji-shi, Tokyo Hitachi, Ltd. (56) Reference JP-A-5-36054 (JP, A) JP-A-1-220217 (JP, A) JP-A-4-321919 (JP, A) JP-A-4-184710 (JP , A) JP 62-150516 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) G11B 5/66

Claims

(57)【特許請求の範囲】(57) [Claims]

【請求項１】非磁性基板と、該非磁性基板上に設けられ
たＮａＣｌ型結晶構造の＜１００＞配向膜と、該ＮａＣｌ型結晶構造の＜１００＞配向膜上に設けられ
た体心立方構造の＜１００＞配向膜と、該体心立方構造の＜１００＞配向膜上に設けられた六方
最密充填構造のＣｏ基合金磁性膜とを有することを特徴
とする磁気記録媒体。And 1. A non-magnetic substrate, a <100> orientation film NaCl-type crystal structure provided non-magnetic substrate, provided <100> orientation film of the NaCl-type crystal structure
Magnetic recording having a body-centered cubic <100> orientation film and a hexagonal close-packed Co-based alloy magnetic film provided on the body-centered cubic <100> orientation film. Medium.

【請求項２】非磁性基板と、該非磁性基板上に設けられたハロゲン化アルカリ、Ｍｇ
Ｏ、ＨｆＣ、ＮｂＣ、ＴａＣ、ＴｉＣ、ＶＣ、ＺｒＣ、
ＴｉＮ、ＶＮ、ＺｒＮ及びこれらの無機化合物を主成分
とする混晶からなる群から選ばれた少なくとも一種の材
料を含む＜１００＞配向膜と、該＜１００＞配向膜上に設けられた体心立方構造の＜１
００＞配向膜と、該体心立方構造の＜１００＞配向膜上に設けられた六方
最密充填構造のＣｏ基合金磁性膜とを有することを特徴
とする磁気記録媒体。2. A non-magnetic substrate, and an alkali halide, Mg provided on the non-magnetic substrate.
O, HfC, NbC, TaC, TiC, VC, ZrC,
Main component is TiN, VN, ZrN and these inorganic compounds
At least one material selected from the group consisting of mixed crystals
<100> orientation film containing a material, and <1> of a body-centered cubic structure provided on the <100> orientation film
00> orientation film and hexagonal structure provided on the <100> orientation film of the body-centered cubic structure
Characterized by having a Co-based alloy magnetic film with a close-packed structure
And magnetic recording media.

【請求項３】非磁性基板と、該非磁性基板上に設けられたＮａＣｌ型結晶構造の＜１
００＞配向膜と、該ＮａＣｌ型結晶構造の＜１００＞配向膜上に設けられ
たＣｒ、Ｍｏ、Ｗ、Ｖ、Ｎｂ、Ｔａ及びこれらの元素を
主成分とする合金からなる群から選ばれた少なくとも一
種の材料を含む＜１００＞配向膜と、該合金からなる群から選ばれた少なくとも一種の材料を
含む＜１００＞配向膜上に設けられた六方最密充填構造
のＣｏ基合金磁性膜とを有することを特徴とする磁気記
録媒体。3. A nonmagnetic substrate and <1 of a NaCl type crystal structure provided on the nonmagnetic substrate.
00> orientation film and the <100> orientation film of the NaCl type crystal structure
Cr, Mo, W, V, Nb, Ta and these elements
At least one selected from the group consisting of alloys containing the main component
<100> orientation film containing various kinds of materials, and at least one kind of material selected from the group consisting of the alloys.
Hexagonal close-packed structure provided on the <100> orientation film including
And a Co-based alloy magnetic film .

【請求項４】情報が記録される磁気記録媒体、該磁気記
録媒体を保持するための保持具、上記磁気記録媒体上に
配置され、情報を記録、再生するための磁気ヘッド、該
磁気ヘッドと上記磁気記録媒体の相対的位置を移動させ
るための移動手段及びこれらを制御するための制御手段
を備えた磁気記録装置において、上記磁気記録媒体は、
請求項１から３のいずれか一に記載の磁気記録媒体を用
いたことを特徴とする磁気記録装置。 4. A magnetic recording medium on which information is recorded, and the magnetic recording medium.
A holder for holding a recording medium, on the magnetic recording medium
A magnetic head arranged for recording and reproducing information,
Move the relative position of the magnetic head and the magnetic recording medium
Means for controlling and control means for controlling these
In the magnetic recording device comprising:
Use the magnetic recording medium according to any one of claims 1 to 3.
A magnetic recording device characterized in that