JP3368036B2 - Focused ion beam processing equipment - Google Patents
Focused ion beam processing equipmentInfo
- Publication number
- JP3368036B2 JP3368036B2 JP05649494A JP5649494A JP3368036B2 JP 3368036 B2 JP3368036 B2 JP 3368036B2 JP 05649494 A JP05649494 A JP 05649494A JP 5649494 A JP5649494 A JP 5649494A JP 3368036 B2 JP3368036 B2 JP 3368036B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- ion beam
- sample
- ion
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 48
- 150000002500 ions Chemical class 0.000 claims description 34
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 235000013367 dietary fats Nutrition 0.000 claims 2
- 239000010520 ghee Substances 0.000 claims 2
- 238000003672 processing method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、深さ方向のエッチング
による微細加工,断面加工用等に有用なイオンビーム加
工装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam processing apparatus useful for fine processing by etching in the depth direction, for cross-section processing and the like.
【０００２】[0002]
【従来の技術】近年、収束イオンビーム加工装置が開発
され、半導体分野を中心にして様々の分野で応用され始
めている。特に最近、収束イオンビーム加工装置を用い
て半導体等の特定箇所の断面透過電子顕微鏡（ＴＥＭ）
観察用試料を作製する技術が注目を集めている。この技
術においては、電子顕微鏡で試料を観察する際に電子線
が試料を透過できるように加工幅をできるだけ小さくす
る必要がある。特に、高倍率で良好な格子像を観察する
ためには、加工幅を少なくとも０．１μｍ以下にするこ
とが望ましい。2. Description of the Related Art In recent years, a focused ion beam processing apparatus has been developed and started to be applied in various fields centering on the semiconductor field. Particularly recently, a cross-section transmission electron microscope (TEM) of a specific place such as a semiconductor using a focused ion beam processing apparatus.
A technique for producing an observation sample is drawing attention. In this technique, it is necessary to make the working width as small as possible so that the electron beam can pass through the sample when observing the sample with an electron microscope. In particular, in order to observe a good lattice image at high magnification, it is desirable that the processing width be at least 0.1 μm or less.
【０００３】図２は従来の収束イオンビーム加工装置の
一構成例を示すものである。FIG. 2 shows an example of the configuration of a conventional focused ion beam processing apparatus.
【０００４】図２中、１はイオン光学系で、イオン源
（不図示）で発生させたイオンをこのイオン光学系１で
収束してイオンビーム２とし、試料３の加工部４にイオ
ンビーム２を照射して試料３を加工するものである。こ
れらは通常、真空チャンバー（不図示）内に配置されて
いる。イオンビーム２をイオン光学系１で制御しながら
試料３の加工部４をイオンビームでスキャンすることに
より、試料３の加工部４を所定方向（本図においては、
矢印Ｘの方向）にエッチングして加工部４を広げていく
もので、これにより新しい加工面５が形成され、この加
工により加工幅６、つまり未加工部分の幅が減少する。
なお、２０はイオン光学系１の制御系である。In FIG. 2, reference numeral 1 denotes an ion optical system which converges the ions generated by an ion source (not shown) into an ion beam 2 and forms an ion beam 2 on a processing portion 4 of a sample 3. Is irradiated to process the sample 3. These are usually placed in a vacuum chamber (not shown). By scanning the processed portion 4 of the sample 3 with the ion beam while controlling the ion beam 2 by the ion optical system 1, the processed portion 4 of the sample 3 is moved in a predetermined direction (in this figure,
The processed portion 4 is expanded by etching in the direction of the arrow X), whereby a new processed surface 5 is formed, and this processing reduces the processed width 6, that is, the width of the unprocessed portion.
Reference numeral 20 is a control system of the ion optical system 1.
【０００５】従来、収束イオンビーム加工装置を用いて
エッチングしながら加工幅を測定する場合には、同装置
の備えている機能を利用して、上方向からの走査イオン
顕微鏡像を観察する方法が採用されている。しかしなが
ら、上記の走査イオン顕微鏡像による加工された試料の
表面の観察においては、加工面の上面、側面、底面の識
別が困難であり、また走査イオン顕微鏡像の分解能があ
まり良くない等の理由で、特に加工幅が微小な場合に
は、加工幅の測定が困難となる。このため、望みどうり
の加工幅とすることは容易ではなく、ときにはオーバー
エッチングを起こして試料を壊してしまう場合もあっ
た。この問題を避けるために、断面ＴＥＭ観察用試料の
作製に収束イオンビーム加工装置を用いて観察に適した
試料を得る場合には、収束イオンビームによる加工と、
透過電子顕微鏡による観察とを交互に繰り返す煩雑な手
順を採用せねばならず、場合によっては試料の移し替え
の際に、試料を破損してしまう等の不都合もあった。従
って、加工幅を自動的に検知して加工を適切に終了させ
ることは困難であり、加工の自動化も不可能であった。Conventionally, when measuring a processing width while etching using a focused ion beam processing apparatus, there is a method of observing a scanning ion microscope image from above by utilizing the function of the apparatus. Has been adopted. However, in the observation of the surface of the processed sample by the scanning ion microscope image, it is difficult to identify the top surface, side surface, and bottom surface of the processed surface, and the resolution of the scanning ion microscope image is not so good. Especially, when the processing width is very small, it becomes difficult to measure the processing width. For this reason, it is not easy to obtain a desired processing width, and in some cases, over-etching may occur to destroy the sample. In order to avoid this problem, when a sample suitable for observation is obtained by using a focused ion beam processing apparatus for manufacturing a sample for cross-sectional TEM observation, processing by a focused ion beam,
A complicated procedure in which observation with a transmission electron microscope is alternately repeated has to be adopted, and in some cases, there is a disadvantage that the sample is damaged when the sample is transferred. Therefore, it is difficult to automatically detect the working width and appropriately finish the working, and it is impossible to automate the working.
【０００６】[0006]
【発明が解決しようとする課題】本発明者は、上記問題
を解決するために種々検討した結果、加工装置のイオン
ビームと異なるエネルギー線を加工中の試料に照射する
ことによって、試料の加工幅を簡単、かつ精度良く測定
できることを知得して本発明を完成するに至ったもの
で、その目的とするところは、加工幅が微小な場合でも
所望の加工幅を確実に加工でき、更に加工装置の自動化
にも適応できる収束イオンビーム加工装置を提供するこ
とにある。As a result of various investigations for solving the above problems, the present inventor irradiates the sample being processed with an energy beam different from the ion beam of the processing apparatus, thereby processing the sample processing width. The present invention has been completed by knowing that it can be easily and accurately measured, and the purpose is to be able to surely process a desired processing width even if the processing width is minute, and further process It is an object of the present invention to provide a focused ion beam processing apparatus that can be adapted to the automation of the apparatus.
【０００７】[0007]
【課題を解決するための手段】上記問題を解決するため
に本発明は、イオン源と、イオン源で発生するイオンを
イオンビームに収束すると共にイオンビームの試料加工
部への照射を制御するイオン光学系とを少なくとも有す
る収束イオンビーム加工装置において、試料の上面を前
記イオンビームでスキャンすることにより試料加工部が
所定方向にエッチングされ広げられて形成される加工断
面に、前記イオンビームと異なるエネルギー線を照射し
て、前記加工により減少する試料の加工幅を測定する手
段を備えることを特徴とする収束イオンビーム加工装置
を提案するもので、加工幅の測定手段が光学的測定手段
であること、加工幅の測定手段が電子的測定手段である
こと、加工幅の測定手段の出力に基づいてイオン光学系
を制御する制御系を備えてなり、加工幅が所定値になる
と加工が終了する上記のいずれかに記載の加工装置であ
ることを含む。In order to solve the above problems, the present invention provides an ion source, and an ion for converging ions generated in the ion source into an ion beam and controlling irradiation of the sample processing portion with the ion beam. in at least a focused ion beam system and an optical system, before the upper surface of the sample
By scanning with the ion beam, the sample processing part
Machining cut formed by etching and expanding in a specified direction
The surface is irradiated with the ion beam and different energy beam, it proposes a focused ion beam processing apparatus comprising means for measuring the processing width of the sample reduced by the process, the measurement of the processing width The means is an optical measuring means, the processing width measuring means is an electronic measuring means, and a control system for controlling the ion optical system based on the output of the processing width measuring means is provided. It includes the processing apparatus according to any one of the above, in which the processing ends when the predetermined value is reached.
【０００８】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【０００９】（実施態様）図１は本発明の収束イオンビ
ーム加工装置の一実施態様を示すものである。(Embodiment) FIG. 1 shows an embodiment of a focused ion beam processing apparatus of the present invention.
【００１０】図１中、符号１乃至６で示される各構成は
図２各の構成と同一構成を表わすものである。本実施態
様においては図２において示される従来の加工装置に、
更に加工幅６の測定をする手段を設けるものである。即
ち、１２はエネルギー線照射系で、この照射系１２から
照射されたエネルギー線１４は加工面５にほぼ垂直に入
射し、加工幅６に対応したエネルギー出力１６が試料３
から放出される。１８はエネルギー出力検出系で、試料
３を中心としてエネルギー線照射系１２と１８０度反対
側に配置され、前記エネルギー出力１６を検出し、予め
検出系１８に設定しあった設定値と比較を行なうもの
で、エネルギー出力１６の検出値が設定値を越えた場合
は出力信号を制御系２０に送出するものである。In FIG. 1, the components denoted by reference numerals 1 to 6 represent the same components as those of FIG. In this embodiment, the conventional processing apparatus shown in FIG.
Further, a means for measuring the processing width 6 is provided. That is, 12 is an energy ray irradiation system, and the energy ray 14 emitted from this irradiation system 12 is incident on the processing surface 5 almost perpendicularly, and the energy output 16 corresponding to the processing width 6 is the sample 3
Emitted from. Reference numeral 18 denotes an energy output detection system, which is arranged on the opposite side of the energy beam irradiation system 12 with respect to the sample 3 by 180 degrees, detects the energy output 16 and compares it with a set value preset in the detection system 18. When the detected value of the energy output 16 exceeds the set value, the output signal is sent to the control system 20.
【００１１】制御系２０は前記出力信号を取り込み、制
御信号をイオン光学系１に送り、これによりイオンビー
ム加工が終了する。The control system 20 takes in the output signal and sends the control signal to the ion optical system 1 to complete the ion beam processing.
【００１２】加工幅を測定する手段の具体例としては、
細く絞ったレーザー光を加工面に照射して加工幅部２２
の透過光の強度を測定するもの、細く絞った電子線を加
工面５に照射して加工幅部２２の非弾性散乱強度を測定
するもの、可視光を加工面５に照射して加工幅部２２の
干渉縞を測定するもの等があるが、これに限られず、紫
外線、Ｘ線等のエネルギー線を用いることもでき、また
エネルギー線の入射角度も垂直に限られず、任意の角度
が採用でき、その他加工幅を測定できる手段であれば、
いずれのものでも採用できる。As a concrete example of the means for measuring the working width,
The processed width part 22 by irradiating the processed surface with a laser beam that has been narrowed down
For measuring the intensity of transmitted light, for measuring the inelastic scattering intensity of the processed width portion 22 by irradiating the processing surface 5 with a narrowed electron beam, for irradiating the processing surface 5 with visible light and processing width portion There are those that measure the interference fringes of 22 and the like, but not limited to this, energy rays such as ultraviolet rays and X-rays can be used, and the incident angle of the energy rays is not limited to vertical, and any angle can be adopted. , Other means that can measure the processing width,
Any one can be adopted.
【００１３】加工幅を測定する手段を設置する場所とし
ては、収束イオンビーム加工装置のチャンバー内、試料
台の上、チャンバーが透明等でエネルギー線を透過でき
るものであるときはチャンバーの外部等がある。しか
し、収束イオンビーム加工および加工幅の測定に不都合
がなければ、設置場所に特に制限はない。The means for measuring the processing width is installed in the chamber of the focused ion beam processing apparatus, on the sample stage, or outside the chamber when the chamber is transparent or the like and can transmit energy rays. is there. However, if there is no inconvenience in the focused ion beam processing and the measurement of the processing width, the installation place is not particularly limited.
【００１４】[0014]
【実施例】以下、実施例により本発明を具体的に説明す
る。EXAMPLES The present invention will be specifically described below with reference to examples.
【００１５】実施例１
図１に示す構成の収束イオンビーム加工装置を製造し
た。Example 1 A focused ion beam processing apparatus having the configuration shown in FIG. 1 was manufactured.
【００１６】チャンバー内の試料付近の真空度は５×１
０ー7Ｔｏｒｒ程度であり、イオン源付近の真空度は１×
１０ー7Ｔｏｒｒ程度であった。The degree of vacuum near the sample in the chamber is 5 × 1.
Is about 0 over 7 Torr, degree of vacuum around the ion source is 1 ×
It was about 10 over 7 Torr.
【００１７】エネルギー照射系１２としてＡｒイオンレ
ーザーを用い、レーザー光で試料３を照射し、その透過
光をレーザー光検出器（光電管）で検出した。Ｓｉウエ
ハー上に形成したデバイスを試料とし、本実施例の装置
を用いてデバイスの断面透過電子顕微鏡観察用試料の作
製を行なった。制御系２０によってイオン光学系１を制
御して、試料であるウエハーの上面（加工面４）をイオ
ンビーム２で走査してウエハーの加工を行なった。な
お、イオン種はＧａイオンであった。An Ar ion laser was used as the energy irradiation system 12, the sample 3 was irradiated with laser light, and the transmitted light was detected by a laser light detector (photoelectric tube). Using the device formed on the Si wafer as a sample, a device for observing a cross-section transmission electron microscope of the device was prepared using the apparatus of this example. The control system 20 controls the ion optical system 1 to scan the upper surface (processing surface 4) of the sample wafer by the ion beam 2 to process the wafer. The ion species was Ga ion.
【００１８】同時にレーザー光を絞って加工面５を照射
した。Ｘ方向に加工を進め、加工を続けていくうちに加
工幅部２２の加工幅６が小さくなり、加工幅部２２を透
過するレーザー光が増加した。ウエハーを中心としてレ
ーザーと反対側に置かれたレーザー光検出器が透過レー
ザー光のエネルギー出力を検出し、予め設定されていた
設定値（本例においては加工幅部を０．１μｍとなるよ
うに設定した。）とエネルギー出力検出値とが比較され
た。検出値が設定値を越えると検出系１８から制御系２
０へ出力信号が送られた。これにより制御系２０からイ
オン光学系に制御信号が送られ、イオンビーム加工が自
動的に停止した。 得られたウエハーの加工幅は０．１
μｍであり、これは透過電子顕微鏡観察用に適したもの
であった。At the same time, the laser beam was focused and the processed surface 5 was irradiated. The processing width 6 of the processing width portion 22 became smaller as the processing proceeded in the X direction and the processing was continued, and the laser light transmitted through the processing width portion 22 increased. A laser light detector placed on the side opposite to the laser centering on the wafer detects the energy output of the transmitted laser light, and a preset value (in this example, the processing width portion is set to 0.1 μm The set value) was compared with the detected energy output value. When the detected value exceeds the set value, the detection system 18 to the control system 2
Output signal sent to 0. As a result, a control signal was sent from the control system 20 to the ion optical system, and the ion beam processing was automatically stopped. The processing width of the obtained wafer is 0.1
μm, which was suitable for transmission electron microscope observation.
【００１９】実施例２
エネルギー線照射系として、電子ビーム照射系（磁界レ
ンズ）を用いて電子ビームを加工面に照射し、照射系と
反対側にある電子ビーム検出系（セクター型磁極）によ
って非弾性散乱電子１弾性散乱電子強度比を測定する以
外は実施例１と同様に加工装置を構成し、実施例１と同
様に加工を行なった。ウエハーの加工幅は０．１μｍで
あった。Embodiment 2 An electron beam irradiation system (magnetic field lens) is used as an energy beam irradiation system to irradiate an electron beam on a surface to be processed, and an electron beam detection system (sector type magnetic pole) located on the side opposite to the irradiation system is used for non-irradiation. Elastic Scattered Electron 1 The processing apparatus was configured in the same manner as in Example 1 except that the elastic scattered electron intensity ratio was measured, and processing was performed in the same manner as in Example 1. The processing width of the wafer was 0.1 μm.
【００２０】[0020]
【発明の効果】本発明によれば、上記のように構成した
ので、加工幅が微小な場合でも望みどうりの加工幅を正
確に、かつ簡単に得ることができる。更に、加工の自動
化が容易である。According to the present invention, since it is configured as described above, a desired working width can be accurately and easily obtained even when the working width is very small. Furthermore, the automation of processing is easy.
【図１】本発明の構成の一例を示すブロック図である。FIG. 1 is a block diagram showing an example of a configuration of the present invention.
【図２】従来の収束イオンビーム加工装置の構成を示す
ブロック図である。FIG. 2 is a block diagram showing a configuration of a conventional focused ion beam processing apparatus.
１ イオン光学系 ２ イオンビーム ３ 試料 ４ 加工部 ５ 加工面 ６ 加工幅 １２ エネルギー線照射系 １４ エネルギー線 １６ エネルギー出力 １８ エネルギー出力検出系 ２０ 制御系 ２２ 加工幅部 1 Ion optical system 2 ion beam 3 samples 4 Processing department 5 Processing surface 6 processing width 12 Energy beam irradiation system 14 Energy rays 16 energy output 18 Energy output detection system 20 control system 22 Processing width part
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/302 201 B23K 15/00 508 B23K 15/02 G01B 21/02 H01J 37/305 ─────────────────────────────────────────────────── ─── Continuation of the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/302 201 B23K 15/00 508 B23K 15/02 G01B 21/02 H01J 37/305
Claims (8)
をイオンビームに収束すると共にイオンビームの試料加
工部への照射を制御するイオン光学系とを少なくとも有
する収束イオンビーム加工装置において、試料の上面を前記イオンビームでスキャンすることによ
り試料加工部が所定方向にエッチングされ広げられて形
成される加工断面に、 前記イオンビームと異なるエネル
ギー線を照射して、前記加工により減少する試料の加工
幅を測定する手段を備えることを特徴とする収束イオン
ビーム加工装置。1. A focused ion beam processing apparatus comprising at least an ion source and an ion optical system for focusing ions generated by the ion source into an ion beam and controlling irradiation of the sample processing portion with the ion beam . By scanning the top surface with the ion beam
Sample processing part is etched in a predetermined direction and expanded
A converged ion beam processing apparatus, comprising means for irradiating an energy beam different from the ion beam to a processing cross section to be formed, and measuring a processing width of a sample reduced by the processing.
を特徴とする請求項１記載の収束イオンビーム加工装
置。2. The focused ion beam processing apparatus according to claim 1, wherein the etching is performed in a depth direction.
して実質的に垂直に入射されることを特徴とする請求項
１又は２記載の収束イオンビーム加工装置。3. The focused ion beam processing apparatus according to claim 1, wherein the energy beam is incident substantially perpendicularly to the processed cross section.
あることを特徴とする請求項１乃至３何れかに記載の収
束イオンビーム加工装置。4. The focused ion beam processing apparatus according to claim 1, wherein the processing width measuring means is an optical measuring means.
あることを特徴とする請求項１乃至４何れかに記載の収
束イオンビーム加工装置。5. The focused ion beam processing apparatus according to claim 1, wherein the processing width measuring means is an electronic measuring means.
ン光学系を制御する制御系を備えてなり、加工幅が所定
値になると前記加工が終了することを特徴とする請求項
１乃至５何れかに記載の収束イオンビーム加工装置。6. A control system for controlling the ion optical system based on the output of the processing width measuring means, wherein the processing is terminated when the processing width reaches a predetermined value. The focused ion beam processing apparatus according to any one of claims.
をイオンビームに収束すると共にイオンビームの試料加
工部への照射を制御するイオン光学系とを少なくとも有
する収束イオンビーム加工装置を用い、試料の上面を前記イオンビームでスキャンすることによ
り試料加工部が所定方向にエッチングされ広げられて形
成される加工断面に、前記イオンビームと異なるエネル
ギー線を照射して、前記加工により減少する 試料の加工
幅を測定することを特徴とする加工方法。It used 7. A ion source, at least a focused ion beam processing apparatus and an ion optical system for controlling the irradiation of the sample processing unit of the ion beam with ions generated in the ion source to converge the ion beam, the sample By scanning the upper surface of the
Sample processing part is etched in a predetermined direction and expanded
In the processed cross section, the energy different from the ion beam
A processing method , which comprises irradiating a ghee line and measuring a processing width of the sample which is reduced by the processing.
をイオンビームに収束すると共にイオンビームの試料加
工部への照射を制御するイオン光学系とを少なくとも有
する収束イオンビーム加工装置を用い、試料の上面を前記イオンビームでスキャンすることによ
り試料加工部が所定方向にエッチングされ広げられて形
成される加工断面に、前記イオンビームと異なるエネル
ギー線を照射して、前記加工により減少する 試料の加工
幅を測定することを特徴とする断面透過電子顕微鏡観察
用試料の製造方法。Using 8. A ion source, at least a focused ion beam processing apparatus and an ion optical system for controlling the irradiation of the sample processing unit of the ion beam with ions generated in the ion source to converge the ion beam, the sample By scanning the upper surface of the
Sample processing part is etched in a predetermined direction and expanded
In the processed cross section, the energy different from the ion beam
A method for producing a sample for observing a cross-section transmission electron microscope , which comprises irradiating a ghee ray and measuring a processing width of the sample which is reduced by the processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05649494A JP3368036B2 (en) | 1994-03-28 | 1994-03-28 | Focused ion beam processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05649494A JP3368036B2 (en) | 1994-03-28 | 1994-03-28 | Focused ion beam processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07273087A JPH07273087A (en) | 1995-10-20 |
| JP3368036B2 true JP3368036B2 (en) | 2003-01-20 |
Family
ID=13028657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05649494A Expired - Fee Related JP3368036B2 (en) | 1994-03-28 | 1994-03-28 | Focused ion beam processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3368036B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006194907A (en) * | 2006-03-31 | 2006-07-27 | Hitachi Ltd | Sample observation device and method using electron beam |
-
1994
- 1994-03-28 JP JP05649494A patent/JP3368036B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07273087A (en) | 1995-10-20 |
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