JP3367439B2 - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- JP3367439B2 JP3367439B2 JP00753299A JP753299A JP3367439B2 JP 3367439 B2 JP3367439 B2 JP 3367439B2 JP 00753299 A JP00753299 A JP 00753299A JP 753299 A JP753299 A JP 753299A JP 3367439 B2 JP3367439 B2 JP 3367439B2
- Authority
- JP
- Japan
- Prior art keywords
- plate member
- dielectric
- plasma processing
- processing apparatus
- dielectric plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体基板等のエ
ッチングまたは薄膜形成等にマイクロ波を導入し、プラ
ズマ処理を行うプラズマ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing plasma processing by introducing a microwave into etching or thin film formation of a semiconductor substrate or the like.
【０００２】[0002]
【従来の技術】従来より、プラズマ処理装置として図４
に示すものが知られている。このプラズマ処理装置は、
処理すべきウェハ１０１を載置するためのウェハ載置台
１０２を収容している反応容器１０３と、この反応容器
１０３の上部に上下に所定間隔をおいて配置されている
上部誘電体板部材１０４と下部誘電体板部材１０５と、
上部誘電体板部材１０４にマイクロ波を導入するための
マイクロ波供給装置１０６と、反応容器１０３の内部上
部に配置されている対向電極１０７とを有している。上
部誘電体板部材１０４は、テフロン板で構成されてい
る。下部誘電体板部材１０５は、石英板で構成されてい
る。2. Description of the Related Art Conventionally, as a plasma processing apparatus, FIG.
Those shown in are known. This plasma processing device is
A reaction container 103 accommodating a wafer mounting table 102 on which a wafer 101 to be processed is mounted, and an upper dielectric plate member 104 arranged above and below the reaction container 103 with a predetermined space therebetween. A lower dielectric plate member 105,
It has a microwave supply device 106 for introducing microwaves into the upper dielectric plate member 104, and a counter electrode 107 arranged in the upper part inside the reaction vessel 103. The upper dielectric plate member 104 is composed of a Teflon plate. The lower dielectric plate member 105 is made of a quartz plate.
【０００３】反応容器１０３には、反応ガスを供給する
反応ガス供給管１０８が配置されている。また、反応容
器１０３には、内部の気体を排出する排気管１０９が配
置されている。さらに、反応容器１０３には、これを所
定の温度に保持するヒーター１１０が設けられている。
ウェハ載置台１０２のウェハ保持部には、これに高周波
電力を与える高周波電源１１１が接続されている。A reaction gas supply pipe 108 for supplying a reaction gas is arranged in the reaction vessel 103. Further, an exhaust pipe 109 for discharging the gas inside is arranged in the reaction container 103. Further, the reaction vessel 103 is provided with a heater 110 which holds the reaction vessel 103 at a predetermined temperature.
A high frequency power supply 111 that supplies high frequency power to the wafer holding unit of the wafer mounting table 102 is connected to the wafer holding unit.
【０００４】マイクロ波供給装置１０６からのマイクロ
波が上部誘電体板部材１０４に導入されると、上部誘電
体板部材１０４上に定在波が形成され、下部誘電体板部
材１０５を通して反応容器１０３の内部に侵入しプラズ
マが生成する。この時、下部誘電体板部材１０５の厚み
が一定であるため、下部誘電体板部材１０５における誘
電率は一定であり、図５に示すように下部誘電体板部材
１０５の直下のプラズマ密度分布は均一になる。When the microwave from the microwave supply device 106 is introduced into the upper dielectric plate member 104, a standing wave is formed on the upper dielectric plate member 104, and the reaction vessel 103 passes through the lower dielectric plate member 105. It penetrates into the inside and plasma is generated. At this time, since the lower dielectric plate member 105 has a constant thickness, the dielectric constant of the lower dielectric plate member 105 is constant, and the plasma density distribution immediately below the lower dielectric plate member 105 is as shown in FIG. Be uniform.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
プラズマ処理装置においては、反応容器１０３の側壁で
のイオンや電子の消滅によりウェハの近傍でのプラズマ
密度分布は、図６に示すように非常に不均一になる。こ
れにより、エッチングも非常に不均一になる。例えばＣ
4 Ｆ8 ／ＣＯ／Ｏ2 ／Ａｒ＝１０／２４／７／４５０ｓ
ｃｃｍ，Ｐｒｅｓｓｕｒｅ＝６０ｍＴｏｒｒ，マイクロ
波パワー＝１０００Ｗ，バイアスパワー＝１４００Ｗの
条件でウェハ１０１をエッチングした場合、酸化膜のウ
ェハ１０１の面内でのエッチングの均一性は、±９．８
％であった。すなわち、従来のプラズマ処理装置におい
ては、プラズマの均一性が悪く、エッチングの形状がウ
ェハの面内で異なるという問題がある。However, in the conventional plasma processing apparatus, the plasma density distribution in the vicinity of the wafer is very high as shown in FIG. 6 due to the disappearance of ions and electrons on the side wall of the reaction vessel 103. It becomes uneven. This also makes the etching very non-uniform. For example, C
4 F8 / CO / O2 / Ar = 10/24/7 / 450s
When the wafer 101 is etched under the conditions of ccm, Pressure = 60 mTorr, microwave power = 1000 W, bias power = 1400 W, the etching uniformity of the oxide film within the surface of the wafer 101 is ± 9.8.
%Met. That is, in the conventional plasma processing apparatus, there is a problem that the uniformity of plasma is poor and the etching shape is different in the plane of the wafer.
【０００６】本発明の目的は、エッチング均一性を向上
させることができるプラズマ処理装置を提供することに
ある。An object of the present invention is to provide a plasma processing apparatus which can improve etching uniformity.
【０００７】[0007]
【課題を解決するための手段】前記課題を解決するため
に、請求項１記載の発明は、処理すべきウェハを載置す
るためのウェハ載置台を収容している反応容器と、該反
応容器の上部に上下に所定間隔をおいて配置されている
上部誘電体板部材と下部誘電体板部材と、前記上部誘電
体板部材にマイクロ波を導入するためのマイクロ波供給
装置と、反応容器の内部上部に配置されている対向電極
とを有するプラズマ処理装置において、下部誘電体板部
材の中央部の下面に固定されている誘電率調整用誘電体
部材を有することを特徴とする。In order to solve the above-mentioned problems, the invention according to claim 1 is to provide a reaction container which accommodates a wafer mounting table for mounting a wafer to be processed, and the reaction container. An upper dielectric plate member and a lower dielectric plate member, which are arranged above and below the upper dielectric plate member at predetermined intervals, a microwave supply device for introducing a microwave into the upper dielectric plate member, and a reaction container A plasma processing apparatus having a counter electrode arranged on an upper part of the inside is characterized in that it has a dielectric constant adjusting dielectric member fixed to a lower surface of a central part of a lower dielectric plate member.
【０００８】請求項２記載の発明は、請求項１記載の発
明において、誘電率調整用誘電体部材はアルミナで構成
されていることを特徴とする。A second aspect of the invention is characterized in that, in the first aspect of the invention, the dielectric constant adjusting dielectric member is made of alumina.
【０００９】請求項３記載の発明は、請求項１記載の発
明において、誘電率調整用誘電体部材はセラミックスで
構成されていることを特徴とする。According to a third aspect of the invention, in the first aspect of the invention, the dielectric constant adjusting dielectric member is made of ceramics.
【００１０】請求項４記載の発明は、処理すべきウェハ
を載置するためのウェハ載置台を収容している反応容器
と、該反応容器の上部に上下に所定間隔をおいて配置さ
れている上部誘電体板部材と下部誘電体板部材と、前記
上部誘電体板部材にマイクロ波を導入するためのマイク
ロ波供給装置と、反応容器の内部上部に配置されている
対向電極とを有するプラズマ処理装置において、前記下
部誘電体板部材の中央部の下面または上面に固定されて
いる複数の誘電率調整用誘電体部材を有することを特徴
とする。According to a fourth aspect of the present invention, there is provided a reaction container accommodating a wafer mounting table for mounting a wafer to be processed, and the reaction container is disposed above and below the reaction container at a predetermined interval. Plasma treatment having an upper dielectric plate member, a lower dielectric plate member, a microwave supply device for introducing microwaves into the upper dielectric plate member, and a counter electrode arranged in an upper portion inside a reaction vessel The apparatus is characterized by having a plurality of dielectric constant adjusting dielectric members fixed to a lower surface or an upper surface of a central portion of the lower dielectric plate member.
【００１１】請求項５記載の発明は、請求項４記載の発
明において、誘電率調整用誘電体部材はアルミナで構成
されていることを特徴とする。A fifth aspect of the invention is characterized in that, in the fourth aspect of the invention, the dielectric constant adjusting dielectric member is made of alumina.
【００１２】請求項６記載の発明は、請求項４記載の発
明において、誘電率調整用誘電体部材はセラミックスで
構成されていることを特徴とする。According to a sixth aspect of the invention, in the fourth aspect of the invention, the dielectric constant adjusting dielectric member is made of ceramics.
【００１３】[0013]
【発明の実施の形態】次に本発明の実施形態を図面に基
づいて詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described in detail with reference to the drawings.
【００１４】図１に示すように、本発明のプラズマ処理
装置は、処理すべきウェハ１を載置するためのウェハ載
置台２を収容している反応容器３と、この反応容器３の
上部に上下に所定間隔をおいて配置されている上部誘電
体板部材４と下部誘電体板部材５と、上部誘電体板部材
４にマイクロ波を導入するためのマイクロ波供給装置６
と、反応容器３の内部上部に配置されている対向電極７
とを有している。上部誘電体板部材４は、テフロン板で
構成されている。下部誘電体板部材５は、石英板で構成
されている。As shown in FIG. 1, the plasma processing apparatus of the present invention has a reaction container 3 containing a wafer mounting table 2 for mounting a wafer 1 to be processed, and an upper portion of the reaction container 3. An upper dielectric plate member 4 and a lower dielectric plate member 5 which are vertically arranged at a predetermined interval, and a microwave supply device 6 for introducing a microwave into the upper dielectric plate member 4.
And the counter electrode 7 arranged in the upper part of the inside of the reaction vessel 3.
And have. The upper dielectric plate member 4 is composed of a Teflon plate. The lower dielectric plate member 5 is made of a quartz plate.
【００１５】反応容器３には、反応ガスを供給する反応
ガス供給管８が配置されている。また、反応容器３に
は、内部の気体を排出する排気管９が配置されている。
さらに、反応容器３には、これを所定の温度に保持する
ヒーター１０が設けられている。ウェハ載置台２のウェ
ハ保持部には、これに高周波電力を与える高周波電源１
１が接続されている。下部誘電体板部材５の中央部の下
面には、ネジの形に加工された誘電率調整用誘電体部材
１２が下部誘電体板部材にネジ込む形で固定されてい
る。誘電率調整用誘電体部材１２は、アルミナで構成さ
れている。A reaction gas supply pipe 8 for supplying a reaction gas is arranged in the reaction container 3. Further, an exhaust pipe 9 for discharging the gas inside is arranged in the reaction container 3.
Further, the reaction container 3 is provided with a heater 10 which holds the reaction container 3 at a predetermined temperature. The wafer holder of the wafer mounting table 2 has a high-frequency power supply 1 for applying high-frequency power to the wafer holding part.
1 is connected. On the lower surface of the central portion of the lower dielectric plate member 5, a dielectric constant adjusting dielectric member 12 processed into a screw shape is fixed by being screwed into the lower dielectric plate member. The dielectric constant adjusting dielectric member 12 is made of alumina.
【００１６】次に、本発明のプラズマ処理装置の動作を
説明する。反応容器３の気体を排気管９から排気して反
応容器３の内部を所定の圧力に設定し、その後に反応ガ
ス供給管８から反応ガスを反応容器３の内部に供給す
る。次に、マイクロ波供給装置６からのマイクロ波が上
部誘電体板部材４に導入されると、上部誘電体板部材４
上に定在波が形成され、下部誘電体板部材５を通して反
応容器３の内部に侵入しプラズマが生成する。Next, the operation of the plasma processing apparatus of the present invention will be described. The gas in the reaction container 3 is exhausted from the exhaust pipe 9 to set the inside of the reaction container 3 to a predetermined pressure, and then the reaction gas is supplied into the reaction container 3 from the reaction gas supply pipe 8. Next, when the microwave from the microwave supply device 6 is introduced into the upper dielectric plate member 4, the upper dielectric plate member 4
A standing wave is formed on the upper part, penetrates into the inside of the reaction container 3 through the lower dielectric plate member 5, and plasma is generated.
【００１７】本発明のプラズマ処理装置は、下部誘電体
板部材５の中央部の下面に誘電率調整用誘電体部材１２
を固定することにより、下部誘電体板部材５の中央部の
誘電率を変化させて、図２のように下部誘電体板部材５
の直下のプラズマ密度を人工的に不均一にし、反応容器
３の側壁でのイオンや電子の消滅を利用して、ウェハ１
の近傍におけるプラズマ密度分布を均一にしている。In the plasma processing apparatus of the present invention, the dielectric member 12 for adjusting the dielectric constant is provided on the lower surface of the central portion of the lower dielectric plate member 5.
By fixing the lower dielectric plate member 5, the dielectric constant of the central portion of the lower dielectric plate member 5 is changed, and as shown in FIG.
The plasma density immediately below the wafer is artificially made non-uniform, and the disappearance of ions and electrons on the side wall of the reaction vessel 3 is used to make the wafer 1
The plasma density distribution in the vicinity of is uniform.
【００１８】本発明のプラズマ処理装置における、ウェ
ハ１の近傍のプラズマ密度を測定した結果を図３に示し
た。図３に示すように、ウェハ１の近傍でのプラズマ密
度分布は非常に良好である。さらに、前述のエッチング
の条件で、本発明のプラズマ処理装置によりウェハ１の
エッチングをし、ウェハ１の酸化膜のエッチングの均一
性を測定した結果±２．８％であった。FIG. 3 shows the result of measuring the plasma density in the vicinity of the wafer 1 in the plasma processing apparatus of the present invention. As shown in FIG. 3, the plasma density distribution near the wafer 1 is very good. Furthermore, the wafer 1 was etched by the plasma processing apparatus of the present invention under the above-described etching conditions, and the etching uniformity of the oxide film on the wafer 1 was measured and found to be ± 2.8%.
【００１９】なお、前記実施形態において、誘電率調整
用誘電体部材１２は、ＳｉＣ等のセラミックスで構成し
てもよい。また、誘電率調整用誘電体部材１２は、下部
誘電体板部材５に無機系接着剤または耐熱性の有機系接
着剤で接着してもよい。また、誘電率調整用誘電体部材
１２は、下部誘電体板部材５の中央部の上面に固定して
もよい。さらに、複数の誘電率調整用誘電体部材１２を
下部誘電体板部材５の下面および上面に固定してもよ
い。In the above embodiment, the dielectric constant adjusting dielectric member 12 may be made of ceramics such as SiC. The dielectric constant adjusting dielectric member 12 may be adhered to the lower dielectric plate member 5 with an inorganic adhesive or a heat resistant organic adhesive. The dielectric constant adjusting dielectric member 12 may be fixed to the upper surface of the central portion of the lower dielectric plate member 5. Further, a plurality of dielectric constant adjusting dielectric members 12 may be fixed to the lower surface and the upper surface of the lower dielectric plate member 5.
【００２０】[0020]
【発明の効果】本発明のプラズマ処理装置は、エッチン
グ均一性を向上させることができる。The plasma processing apparatus of the present invention can improve etching uniformity.
【図１】本発明の１つの実施形態としてのプラズマ処理
装置を示す概略図である。FIG. 1 is a schematic diagram showing a plasma processing apparatus as one embodiment of the present invention.
【図２】図１のプラズマ処理装置の動作を説明するため
の図である。FIG. 2 is a diagram for explaining the operation of the plasma processing apparatus of FIG.
【図３】図１のプラズマ処理装置の動作を説明するため
の他の図である。FIG. 3 is another diagram for explaining the operation of the plasma processing apparatus of FIG.
【図４】従来のプラズマ処理装置を示す概略図である。FIG. 4 is a schematic diagram showing a conventional plasma processing apparatus.
【図５】図４のプラズマ処理装置の動作を説明するため
の図である。5 is a diagram for explaining the operation of the plasma processing apparatus of FIG.
【図６】図４のプラズマ処理装置の動作を説明するため
の他の図である。FIG. 6 is another diagram for explaining the operation of the plasma processing apparatus of FIG.
１ ウェハ ２ ウェハ載置台 ３ 反応容器 ４ 上部誘電体板部材 ５ 下部誘電体板部材 ６ マイクロ波供給装置 ７ 対向電極 ８ 反応ガス供給管 ９ 排気管 １０ ヒーター １１ 高周波電源 １２ 誘電率調整用誘電体部材 1 wafer 2 Wafer mounting table 3 reaction vessels 4 Upper dielectric plate member 5 Lower dielectric plate member 6 microwave supply device 7 Counter electrode 8 Reaction gas supply pipe 9 exhaust pipe 10 heater 11 High frequency power supply 12 Dielectric material for dielectric constant adjustment
Claims (6)
ハ載置台を収容している反応容器と、該反応容器の上部
に上下に所定間隔をおいて配置されている上部誘電体板
部材と下部誘電体板部材と、前記上部誘電体板部材にマ
イクロ波を導入するためのマイクロ波供給装置と、前記
反応容器の内部上部に配置されている対向電極とを有す
るプラズマ処理装置において、 前記下部誘電体板部材の中央部の下面に固定されている
誘電率調整用誘電体部材を有することを特徴とするプラ
ズマ処理装置。1. A reaction container accommodating a wafer mounting table on which a wafer to be processed is mounted, and an upper dielectric plate member arranged above and below the reaction container at a predetermined interval. A plasma processing apparatus comprising: a lower dielectric plate member; a microwave supply device for introducing microwaves into the upper dielectric plate member; and a counter electrode arranged in an upper part inside the reaction vessel, wherein the lower part A plasma processing apparatus comprising a dielectric constant adjusting dielectric member fixed to a lower surface of a central portion of the dielectric plate member.
いて、 前記誘電率調整用誘電体部材はアルミナで構成されてい
ることを特徴とするプラズマ処理装置。2. The plasma processing apparatus according to claim 1, wherein the dielectric constant adjusting dielectric member is made of alumina.
いて、 前記誘電率調整用誘電体部材はセラミックスで構成され
ていることを特徴とするプラズマ処理装置。3. The plasma processing apparatus according to claim 1, wherein the dielectric constant adjusting dielectric member is made of ceramics.
ハ載置台を収容している反応容器と、該反応容器の上部
に上下に所定間隔をおいて配置されている上部誘電体板
部材と下部誘電体板部材と、前記上部誘電体板部材にマ
イクロ波を導入するためのマイクロ波供給装置と、前記
反応容器の内部上部に配置されている対向電極とを有す
るプラズマ処理装置において、 前記下部誘電体板部材の中央部の下面または上面に固定
されている複数の誘電率調整用誘電体部材を有すること
を特徴とするプラズマ処理装置。4. A reaction container accommodating a wafer mounting table for mounting a wafer to be processed, and an upper dielectric plate member arranged above and below the reaction container at a predetermined interval. A plasma processing apparatus comprising: a lower dielectric plate member; a microwave supply device for introducing microwaves into the upper dielectric plate member; and a counter electrode arranged in an upper part inside the reaction vessel, wherein the lower part A plasma processing apparatus comprising: a plurality of dielectric constant adjusting dielectric members fixed to a lower surface or an upper surface of a central portion of the dielectric plate member.
いて、 前記誘電率調整用誘電体部材はアルミナで構成されてい
ることを特徴とするプラズマ処理装置。5. The plasma processing apparatus according to claim 4 , wherein the dielectric constant adjusting dielectric member is made of alumina.
いて、 前記誘電率調整用誘電体部材はセラミックスで構成され
ていることを特徴とするプラズマ処理装置。6. The plasma processing apparatus according to claim 4 , wherein the dielectric constant adjusting dielectric member is made of ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00753299A JP3367439B2 (en) | 1999-01-14 | 1999-01-14 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00753299A JP3367439B2 (en) | 1999-01-14 | 1999-01-14 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000208491A JP2000208491A (en) | 2000-07-28 |
| JP3367439B2 true JP3367439B2 (en) | 2003-01-14 |
Family
ID=11668407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00753299A Expired - Fee Related JP3367439B2 (en) | 1999-01-14 | 1999-01-14 | Plasma processing equipment |
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| Country | Link |
|---|---|
| JP (1) | JP3367439B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101094982B1 (en) | 2008-02-27 | 2011-12-20 | 도쿄엘렉트론가부시키가이샤 | Plasma etching apparatus and plasma etching method |
| US20110240598A1 (en) * | 2008-11-18 | 2011-10-06 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
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