JP3360250B2 - COMPOSITE MICRO BALL, ITS MANUFACTURING METHOD AND MANUFACTURING APPARATUS - Google Patents
COMPOSITE MICRO BALL, ITS MANUFACTURING METHOD AND MANUFACTURING APPARATUSInfo
- Publication number
- JP3360250B2 JP3360250B2 JP36774298A JP36774298A JP3360250B2 JP 3360250 B2 JP3360250 B2 JP 3360250B2 JP 36774298 A JP36774298 A JP 36774298A JP 36774298 A JP36774298 A JP 36774298A JP 3360250 B2 JP3360250 B2 JP 3360250B2
- Authority
- JP
- Japan
- Prior art keywords
- ball
- composite
- microball
- manufacturing
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011806 microball Substances 0.000 title claims description 55
- 239000002131 composite material Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000011805 ball Substances 0.000 claims description 107
- 238000007747 plating Methods 0.000 claims description 71
- 229910000679 solder Inorganic materials 0.000 claims description 33
- 239000010410 layer Substances 0.000 claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 229910020658 PbSn Inorganic materials 0.000 claims description 4
- 101150071746 Pbsn gene Proteins 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910016347 CuSn Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910017750 AgSn Inorganic materials 0.000 claims description 2
- 229910005728 SnZn Inorganic materials 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Wire Bonding (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体パッケージ
における半導体素子の内部接続電極に用いるフリップチ
ップ用マイクロボール及びその製造方法と製造装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip-chip microball used as an internal connection electrode of a semiconductor element in a semiconductor package, and a method and an apparatus for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、電子情報機器の高性能化と高密度
化、即ち、携帯化の動きが一層急激になっている。これ
を支えるキーテクノロジーとして、電子部品や半導体チ
ップの表面実装の重要性がますますたかまってきてい
る。2. Description of the Related Art In recent years, the trend toward higher performance and higher density of electronic information equipment, ie, portability, has become more rapid. As a key technology supporting this, the importance of surface mounting of electronic components and semiconductor chips is increasing.
【０００３】最近の技術の流れとしては、フリップチッ
プ方式によるチップサイズパッケージが主流になりつつ
ある。チップと基板との距離、即ち、接続長はその組み
立て上、凡そ４０μｍ以上必要である。少なくとも３０
μｍ未満では実用上組み立てることは不可能である。As a recent flow of technology, a chip size package by a flip chip method is becoming mainstream. The distance between the chip and the substrate, that is, the connection length, needs to be about 40 μm or more in terms of assembly. At least 30
If it is less than μm, it is practically impossible to assemble.
【０００４】フリップチップ方式によれば、チップに設
けられる内部電極は、半田、金あるいは金合金の線材を
熔接、切断によりフリップチソプ接続として形成されて
いる。さらに、より慣習的には、ワイヤーボンディング
（以下、ＷＢと呼ぶ）で接続してきたが、その高実装密
度化の要求が厳しく限界にきている。According to the flip chip method, the internal electrodes provided on the chip are formed as a flip chip connection by welding and cutting a wire made of solder, gold or a gold alloy. Furthermore, the connection has been more customarily made by wire bonding (hereinafter, referred to as WB), but the demand for a higher packaging density has been severely limited.
【０００５】今、市場で求められているものも、このこ
とからより短くしかも電気的に安定な、熱的にも充分で
あるという要件を満たしているものが求められている。
ちなみに、接続長は実質１２０μｍ以下が必須となって
きている。[0005] At present, what is required in the market is to meet the requirements of being shorter, electrically stable, and thermally sufficient.
Incidentally, it has become essential that the connection length is substantially 120 μm or less.
【０００６】近い将来５００ピン以上、外部動作周波数
が２５０ＭＨｚ以上の領域をカバーしなければならない
のが実情である。In the near future, it is necessary to cover an area of 500 pins or more and an external operating frequency of 250 MHz or more.
【０００７】なお、フリップチップの工法には、スタッ
ドバンプボンデイング、異方性導電膜、金バンプソルダ
ーリング等種々その方式は、知られているが、通称Ｃ４
法（Ｃｏｎｔｒｏｌｌｅｄ Ｃｏ１１ａｐｓｅ Ｃｈｉ
ｐ Ｃｏｎｎｅｃｔｉｏｎ）が最も信頼性に優れている
事は判っている。ただし、このＣ４法における今日的要
求レべルでは、所望のめっきされた球体を得る事が大切
である。Various methods for flip chip fabrication, such as stud bump bonding, anisotropic conductive film, and gold bump soldering, are known.
Method (Controlled Co11apse Chi)
p Connection) has been found to be the most reliable. However, at the current demand level of the C4 method, it is important to obtain a desired plated sphere.
【０００８】上記したように、フリップチップ方式のＣ
４法においては、めっきされた球体が必要である。その
めっきの膜厚、例えば、１０μｍ以上で均一成膜性を備
えることも、外表皮、例えば、裂皮が無く転がり性が優
れていることも大切である。As described above, the flip-chip type C
Method 4 requires plated spheres. It is important that the plating has a uniform film-forming property at a film thickness of, for example, 10 μm or more, and that the outer skin, for example, without tears, has excellent rolling properties.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、微小粉
体等へのめっき技術でさえ、さまざま検討されてきた
が、少なくとも１００μｍ以下のサイズについては成功
事例が僅かである。However, various techniques have been studied for plating a fine powder or the like, but there are few successful cases of at least a size of 100 μm or less.
【００１０】一方、懸濁電気めっきによる、１００μｍ
以下の微粒子めっきについて検討されてはいるが、半田
（軟質）で球形が必要で膜の厚いものは得られてない。On the other hand, 100 μm
Although the following fine particle plating is being studied, a solder (soft), spherical shape is required and a thick film cannot be obtained.
【００１１】そこで、本発明の技術的課題は、球体に厚
い（片側１０μｍ以上の）安定した成膜が出来て、仕上
がり形状が球形で転がり性の良いめっき層を備えた複合
マイクロボールとその製造方法と製造装置とを提供する
ことにある。Accordingly, the technical problem of the present invention is to provide a composite microball having a spherical (thickness of 10 μm or more on one side) stable film formation, a spherical finished shape, and a plating layer having good rolling properties and a manufacturing method thereof. A method and a manufacturing apparatus are provided.
【００１２】[0012]
【課題を解決するための手段】本発明によれば、銅をコ
アボールとするマイクロボールにおいて、前記コアボー
ルは、３０μｍ以上で１２０μｍ以下の均一な直径を有
し、前記マイクロボールは、外径が５０〜２００μｍの
範囲内にあり、前記コアボール側の第一層にコバルト及
びニッケルの内の少なくとも一種から実質的になる下地
層と、前記下地層上の第二層に２０μｍ以上の均一な厚
さの電気半田めっき層からなる半田被覆層を有し、前記
半田被覆層の膜厚のバラツキが当該第二層の膜厚の１０
％以内であることを特徴とする複合マイクロボールが得
られる。According to the present invention, in a microball using copper as a core ball, the core ball has a uniform diameter of 30 μm or more and 120 μm or less, and the microball has an outer diameter of 30 μm or less. Is in the range of 50 to 200 μm, and the first layer on the core ball side has an underlayer substantially composed of at least one of cobalt and nickel, and the second layer on the underlayer has a uniform thickness of 20 μm or more. has a solder coating layer having a thickness of the electrical solder plating layer, variation in the thickness of the solder coating layer having a thickness of the second layer 10
% Of the composite microball is obtained.
【００１３】[0013]
【００１４】[0014]
【００１５】[0015]
【００１６】[0016]
【００１７】[0017]
【００１８】また、本発明によれば、前記複合マイクロ
ボールにおいて、前記半田は、ＰｂＳｎ、ＣｕＳｎ、Ａ
ｇＳｎ、及びＳｎＺｎの内の少なくとも一種からなるこ
とを特徴とする複合マイクロボールが得られる。According to the present invention, in the composite microball, the solder is PbSn, CuSn, A
A composite microball comprising at least one of gSn and SnZn is obtained.
【００１９】また、本発明によれば、前記複合マイクロ
ボールを製造する方法であって、陰極側に配置された前
記コアボールを回転させて、通電非通電を行うととも
に、直径が３００〜１０００μｍ未満のダミーボール
を、下地めっきされた前記コアボールが５〜２０％（容
積比）以内になるように構成させながら、成膜中のボー
ル付着を解消し均一なはんだめっき層を形成することを
特徴とする複合マイクロボールの製造方法が得られる。Further, according to the present invention, there is provided a method of manufacturing the composite microball, wherein the core ball disposed on the cathode side is rotated to energize and deenergize, and has a diameter of 300 to less than 1000 μm. The above-mentioned dummy ball is configured so that the core ball plated with the underlayer is within 5 to 20% (volume ratio), and the adhesion of the ball during film formation is eliminated to form a uniform solder plating layer. Is obtained.
【００２０】また、本発明によれば、前記複合マイクロ
ボールの製造方法において、前記通電条件は、電流密度
で０．６Ａ／ｄｍ２未満で行うことを特徴とする複合マ
イクロボールの製造方法が得られる。Further, according to the present invention, in the method for producing a composite microball, the energization condition is performed at a current density of less than 0.6 A / dm 2. can get.
【００２１】[0021]
【００２２】また、本発明によれば、前記複合マイクロ
ボールの製造方法において、前記半田めっき液として、
フッ酸系ホウフッ化浴に、ホウフッ化水素酸をＰｂ、Ｓ
ｎの総和に対し、０．０１〜０．２モル％添加したもの
を用い、電流密度０．６Ａ／ｄｍ２未満とすることで安
定した２０μｍ以上の膜厚を形成させることを特徴とす
る複合マイクロボールの製造方法が得られる。According to the present invention, in the method for producing a composite microball, the solder plating solution may be
In a hydrofluoric acid-based fluorinated bath, borofluoric acid is Pb, S
a current density of less than 0.6 A / dm 2 is used to form a stable film thickness of 20 μm or more by using 0.01 to 0.2 mol% added to the total of n. Thus, a method for producing a composite microball can be obtained.
【００２３】また、本発明によれば、前記複合マイクロ
ボールの製造方法において、前記半田めっき液として、
フッ酸系ホウフッ化浴に、ホウフッ化水素酸をＰｂ、Ｓ
ｎの総和に対し、０．０１〜０．２モル％添加したもの
を用い、電流密度３．０Ａ／ｄｍ2 以下とすることで安
定した１０μｍ以上の膜厚を形成させることを特徴とす
る複合マイクロボールの製造方法が得られる。According to the present invention, in the method of manufacturing a composite microball, the solder plating solution may be
In a hydrofluoric acid-based fluorinated bath, borofluoric acid is Pb, S
A composite characterized by forming a stable film thickness of 10 μm or more by controlling the current density to 3.0 A / dm 2 or less by using one added in an amount of 0.01 to 0.2 mol% based on the total of n. A method for producing microballs is obtained.
【００２４】更に、本発明によれば、前記複合マイクロ
ボールを製造する装置であって、前記コアボールに通
電、非通電が交互に行える機構を備えた回転陰極と、前
記回転陰極の内側に配置された半田を含む陰極と、非通
電時に前記陰極にめっきされたボール同士の付着を解除
させる振動機構とを有する電気めっき装置からなること
を特徴とする複合マイクロボールの製造装置が得られ
る。Further, according to the present invention, there is provided an apparatus for manufacturing the composite microball, comprising: a rotating cathode provided with a mechanism for alternately energizing and de-energizing the core ball; An apparatus for manufacturing a composite microball, comprising an electroplating apparatus having a cathode including the solder thus obtained and a vibrating mechanism for releasing adhesion of balls plated on the cathode when electricity is not supplied, is obtained.
【００２５】[0025]
【００２６】[0026]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００２７】（第１の実施の形態）図１は本発明の第１
の実施の形態による複合マイクロボールの製造装置とし
て電気めっき装置の概略構成を示す断面図である。図１
に示すように、電気めっき装置１０は、内槽１とその外
側に形成された外槽２とを備えている。内槽１は、側部
のみに、導電性材料からなる陰極３が形成され、残りの
部分が絶縁材料からなり、底部下端には、第１の振動装
置４が設けられている。また、内槽１内には、めっき液
５が満たされ、このめっき液５に陽極６が浸されてい
る。また、陰極３に接するように、溶液中に銅（Ｃｕ）
ボール７が底に沈められている。外槽２の外部には、第
２の振動装置８が設けられている。また、外槽２内で、
内槽の外側には、冷却液１３等が充填されており、ま
た、外槽２と内槽１の開口部付近は、内槽１を外槽２に
対して、間隔をおいて相対回転可能に保持する間隙保持
部材１４が設けられている。間隙保持部材１４は、ま
た、内槽１の外側面で受けたの振動を内槽１を通して、
内部のめっき液５等に伝達可能に構成されている。(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
It is sectional drawing which shows schematic structure of the electroplating apparatus as an apparatus for manufacturing a composite microball according to the embodiment. FIG.
As shown in FIG. 1, the electroplating apparatus 10 includes an inner tank 1 and an outer tank 2 formed outside the inner tank 1. In the inner tank 1, a cathode 3 made of a conductive material is formed only on a side portion, the remaining portion is made of an insulating material, and a first vibrating device 4 is provided at a lower end of the bottom. The inner tank 1 is filled with a plating solution 5, and the anode 6 is immersed in the plating solution 5. Further, copper (Cu) is contained in the solution so as to be in contact with the cathode 3.
Ball 7 is sinking to the bottom. A second vibrating device 8 is provided outside the outer tub 2. In the outer tank 2,
The outside of the inner tank is filled with a coolant 13 or the like, and the outer tank 2 and the vicinity of the opening of the inner tank 1 can be rotated relative to the outer tank 2 with an interval between the inner tank 1 and the outer tank 2. Are provided. The gap holding member 14 also receives the vibration received on the outer surface of the inner tank 1 through the inner tank 1,
It is configured to be able to transmit to the plating solution 5 and the like inside.
【００２８】第１及び第２の振動装置４、８は、取り付
け面に垂直に働く振動装置であり、矢印１１及び１２で
示されるそれぞれの振動方向Ｄ１、Ｄ２は、直角もしく
は垂直、または平行のいずれでもなく、鋭角を形成する
方向で、例えば、ねじれの位置等であっても良い。The first and second vibrating devices 4 and 8 are vibrating devices acting perpendicular to the mounting surface, and the respective vibrating directions D1 and D2 indicated by arrows 11 and 12 are perpendicular or vertical, or parallel. However, the direction may be an acute angle, for example, a twist position.
【００２９】本発明の実施の形態において用いられるコ
アボールは、微小径ボールである。この微小径ボール
は、ブラズマ回転電極法やプラズマによる球状化処理装
置の市販品がある。得られた球形体を精密分級により所
望のコアボールを調粒する。分級には、薄板にマイクロ
ドリルや放電加工（精密電極）で穿孔したものにより篩
分、分級しても良いし、画像処理により選別したもので
も良い。凡そ３０μｍ以上で１２０μｍ以下の直径±５
％以内の精密な銅ボールからなるコアボールが得られて
いる。The core ball used in the embodiment of the present invention is a small-diameter ball. As the minute diameter ball, there are commercially available products of a sphering treatment apparatus using a plasma rotating electrode method or plasma. A desired core ball is sized by precision classification of the obtained spherical body. For classification, a thin plate may be sieved and classified by using a material drilled with a microdrill or electric discharge machining (precision electrode), or may be classified by image processing. Diameter of about 30μm or more and 120μm or less ± 5
% Of core balls made of precise copper balls.
【００３０】次に、コアボール表面にめっきを施す。め
っきは先述した通り、微小球にめっきが施されるとその
表面積と全体の体積が急増するため、撹拌でのボールの
挙動が変化する。さらに、電気めっきするための大切な
要因である電流密度が大きく変化するためこの制御が欠
かせない。また、めっき層である半田が析出すればする
ほど半田どおしの接触による半田されたボール、即ち、
複合マイクロボールの付着が増大され、その結果パッケ
ージ組み立て時に個別に所望の位置に接合させねばなら
ない所望するボールが実質的には得られない。即ち、製
品歩留が大幅に低下し、実用上採用できない。要する
に、１０μｍ以上の厚めっきが安定して得られることが
眼目である。Next, plating is performed on the surface of the core ball. As described above, when the microspheres are plated, the surface area and the total volume of the microspheres increase rapidly, so that the behavior of the balls under stirring changes. Further, since the current density, which is an important factor for electroplating, greatly changes, this control is indispensable. Also, the more the solder that is the plating layer is deposited, the more balls soldered due to the contact of the solder, ie,
The adhesion of the composite microballs is increased so that the desired balls that must be individually bonded to the desired locations during package assembly are not substantially obtained. That is, the product yield is greatly reduced, and cannot be used practically. In short, it is important to be able to stably obtain a thick plating of 10 μm or more.
【００３１】本発明者らは、各種試験装置を作製し検討
した。その結果、成膜を連続的に行なうのは困難で、一
旦、一定量を成膜させた後、電源を切って成膜を中止
し、さらにその時点で付着している複合マイクロボール
を陰極と共に３次元的に振動させて分離、解離させ、再
び通電させる事で、前記析出させた半田層の上に追加の
半田層を析出、成長させる。この操作を繰り返し行なう
ことで、はんためっきされたボールの相互の付着を殆ど
発生させずに、所望のめっきを施す事ができるようにな
った。The present inventors have prepared and examined various test devices. As a result, it is difficult to continuously form a film. Once a certain amount of film is formed, the power is turned off to stop the film formation. An additional solder layer is deposited and grown on the deposited solder layer by three-dimensionally vibrating to separate, dissociate, and re-energize. By repeating this operation, desired plating can be performed with almost no sticking of the solder-plated balls to each other.
【００３２】ここで、本発明において、３次元的とは、
単に一方向の往復振動だけでは充分な分離、解離を行な
え無いので、一般的な一方向振動機である第１の振動装
置４をめっき浴の底面に設置し、その浴を振動により動
きが阻害されない程度のフレキシブルな接続により更に
外郭に固定外槽２に接続し、その外槽を、例えば、第２
の振動装置８によって、第１の振動装置４に対して４５
度に傾斜させて、第１及び第２の振動装置４、８を同時
に振動させる事で、内部のボールが非通電時に個別に浴
槽底に沈降させることをいう。Here, in the present invention, three-dimensional means
Since sufficient separation and dissociation cannot be performed by simply one-way reciprocating vibration, the first vibrating device 4, which is a general one-way vibrator, is installed on the bottom of the plating bath, and movement of the bath is hindered by vibration. The outer tub 2 is further connected to the fixed outer tub 2 by a flexible connection to the extent that the outer tub is not connected.
Of the first vibrating device 4 by the vibrating device 8
By inclining the first and second vibrating devices 4 and 8 at the same time, the internal balls are individually settled at the bottom of the bathtub when power is not supplied.
【００３３】本発明において、めっき液は一般的なホウ
フッ化浴系で良く、特に注意するべきことは、反応制御
剤として添加するホウフッ化水素酸をＰｂ、Ｓｎの総和
に対し、０．０１〜０．２モル％にすることで劣化速度
を抑えることができることが分った。ここで、ホウフッ
化鉛、ホウフッ化錫だけでは、膜質が悪い。また、これ
らの塩類だけでは、めっきの成長に芳しくないのは、通
例である。ホウフッ化水素酸は高価であり、この目的の
条件開発に適した添加量の範囲を探すことが大切で、種
々実験し、最適条件域を見出だしたものである。しか
も、この範囲は、ＰｂＳｎの濃度を過度に低下すること
もない範囲にし得たので、実用上大切な要素となる。In the present invention, the plating solution may be a general borofluoride bath system, and it should be particularly noted that the amount of borofluoric acid added as a reaction control agent is 0.01 to 0.01% based on the total amount of Pb and Sn. It was found that the rate of deterioration can be suppressed by setting the content to 0.2 mol%. Here, the film quality is poor only with lead borofluoride and tin borofluoride. It is customary that these salts alone are not good for plating growth. Borofluoric acid is expensive, and it is important to find a suitable range of the amount added for the purpose of developing conditions for this purpose, and various experiments have been carried out to find the optimum condition range. Moreover, this range is an important factor in practical use because the range of PbSn can be set to a range where the concentration of PbSn is not excessively reduced.
【００３４】前記半田の他、ＣｕＳｎ、ＡｇＳｎ、Ｓｎ
Ｚｎも同様な装置で可能であり、もちろん、本発明の効
果を期待できる。当然環境問題を考慮し鉛を用いないこ
ともできる。In addition to the solder, CuSn, AgSn, Sn
Zn can be formed by a similar device, and of course, the effect of the present invention can be expected. Naturally, lead may not be used in consideration of environmental issues.
【００３５】次に、本発明の実施の形態による複合マイ
クロボールの製造例について説明する。Next, an example of manufacturing a composite microball according to the embodiment of the present invention will be described.
【００３６】プラズマ球状化処理装置により６０±５μ
ｍの、真球度も表面滑らかさも良好な銅コアボール素球
を得た。次いで銅箔に放電加工により穿孔して５５μｍ
と６５μｍのパンチングメタル（網）を作製し、この２
枚の網により６０±２．５μｍの銅コアボールとした。
６０μｍ銅ボールと呼ぶ。図１に示す電気めっき装置に
表１に示すめっき液を充填した。[0036] 60 ± 5μ by plasma sphering device
m, a copper core ball having good sphericity and good surface smoothness was obtained. Next, the copper foil was pierced by electric discharge machining to 55 μm.
And a punching metal (net) of 65 μm were produced.
A copper core ball having a size of 60 ± 2.5 μm was formed by a single mesh.
Called 60 μm copper balls. The plating solution shown in Table 1 was filled in the electroplating apparatus shown in FIG.
【００３７】[0037]
【表１】 [Table 1]
【００３８】６０μｍ銅ボールを脱脂等の前処理を充分
行なった後、めっき液とほぼ同じ液系で活性化処理を
し、６０μｍ銅ボールを１００ｃｃとボール同士の付着
防止のためにダミーボールとしてφ２００μｍの鉄製ボ
ールを銅ボールと同容積を内槽１のめっき液の飛沫に注
意しながらし、全体の容積を８００ｃｃとした。浴液温
度は、１４〜２２℃で、図１の内外槽１、２間に冷却液
１３を循環させて制御し、内槽１の中心から若干偏芯し
て取付けた図示しない撹拌機で凡そ５００〜７００ｒｐ
ｍで、液面にコアの生じない様に注意しながら、撹拌し
た。同時に内槽１を撹拌機と逆の方向に槽自体を回転し
た。底外側に振動装置を設置した内槽を回転しながら凡
そ３Ａ／ｄｍ2 通電し、１０〜２０秒めっきした後、電
源を切り、内外槽１、２に設けられた２種類の振動装置
を同時に作動させ、めっきされたボールを個別に回収し
た。これにより、非通電時に半田膜の成長した複合マイ
クロボールが分離、解離する。After the pretreatment such as degreasing of the 60 μm copper ball is sufficiently performed, activation treatment is carried out with a liquid system substantially the same as the plating solution, and a 60 μm copper ball having a diameter of 200 μm is used as a dummy ball to prevent adhesion of the ball to 100 cc. The total volume was set to 800 cc while paying attention to the plating solution of the inner tank 1 with the same volume as the copper ball. The temperature of the bath solution is 14 to 22 ° C., and is controlled by circulating a coolant 13 between the inner and outer tanks 1 and 2 in FIG. 500-700 rp
At m, the mixture was stirred while being careful not to form a core on the liquid surface. At the same time, the inner tank 1 was rotated in the direction opposite to that of the stirrer. Approximately 3 A / dm 2 is applied while rotating the inner tank in which the vibration device is installed on the bottom outer side, and after plating for 10 to 20 seconds, the power is turned off, and the two types of vibration devices provided in the inner and outer tanks 1 and 2 are simultaneously driven. It was activated and the plated balls were individually collected. As a result, the composite microball on which the solder film has grown is separated and dissociated when no current is supplied.
【００３９】前処理が不充分ではめっきが良好に進まぬ
事と、６０μｍ銅ボールが小さい事から、液の表面に浮
遊することがあり注意が要る。この時、ホウフッ化水素
酸は０．０１モル％程度でも効果はあるが、０．２モル
％を越えるとめっきの成長速度がむしろ低下する。If the pretreatment is insufficient, the plating does not proceed well, and since the 60 μm copper balls are small, they may float on the surface of the solution, and thus care must be taken. At this time, the content of borofluoric acid is effective even if it is about 0.01 mol%, but if it exceeds 0.2 mol%, the growth rate of plating is rather lowered.
【００４０】出来た複合マイクロボールを中央から切断
し、断面観察したところ、半田めっき厚は、１２μｍで
あり、実質的な半田被覆層の厚さのバラツキは、概ね１
μｍであった。しかも、個別に平面を転がすと良く転が
った。When the resulting composite microball was cut from the center and observed in cross section, the thickness of the solder plating was 12 μm, and the substantial variation in the thickness of the solder coating layer was approximately 1 μm.
μm. In addition, it rolled well when rolling the plane individually.
【００４１】（第２の実施の形態）本発明の第２実施の
形態による複合マイクロボールは、外径が５０〜２００
μｍの範囲内にあり、直径が３０μｍ以上で１２０μｍ
以下の銅からなるコアボールと、その上又は最表皮に片
側２０μｍ以上の均一な厚さの半田めっき層を有する。
また、銅コアボール表面と半田めっき層との間にコバル
トから実質的になる下地層が形成されている。(Second Embodiment) A composite microball according to a second embodiment of the present invention has an outer diameter of 50 to 200.
μm range, with a diameter of 30 μm or more and 120 μm
A core ball made of the following copper and a solder plating layer having a uniform thickness of 20 μm or more on one side are provided on or on the outermost skin.
An underlayer substantially made of cobalt is formed between the surface of the copper core ball and the solder plating layer.
【００４２】この複合マイクロボールは、平坦で５度以
上の傾斜面での良好な転がり性を備えている。This composite microball has a good rolling property on a flat inclined surface of 5 ° or more.
【００４３】本発明の第２の実施の形態による複合マイ
クロボールとしては、半田めっき層の厚みは、１０μｍ
以上有れば半導体パッケージ用としてマウントは可能だ
が、２０μｍ以上あれば尚好ましく実装後のバンブとし
てのセルフアライメントの効き方が安定で、フラックス
の有無による差の無い良好な被覆層といえる。少なくて
も１０μｍ未満では高密度実装即ち沢山のボールを近接
してマウントさせるには、ボール同士の接触不安よりセ
ルフアライメントの有効性を優先させて良く実際大切で
ある。The thickness of the solder plating layer of the composite microball according to the second embodiment of the present invention is 10 μm.
If it is above, mounting for a semiconductor package is possible, but if it is 20 μm or more, it is more preferable that the effect of self-alignment as a bump after mounting is stable, and it can be said that a good covering layer having no difference due to the presence or absence of flux. If it is less than 10 μm at least, it is important to put high priority on the effectiveness of self-alignment over uneasiness of contact between the balls in order to mount high density, that is, mount many balls in close proximity.
【００４４】また、下地層は、特にコアボール中のＣｕ
とめつき層のＳｎとが反応し、脆化層の生成を防ぐため
に設けられている。The underlayer is made of Cu, especially in the core ball.
This is provided in order to prevent Sn of the fastening layer from reacting with each other to form an embrittlement layer.
【００４５】即ち、本発明者らは、種々の実験を行った
結果、コバルトめっき又はニッケル／コバルト合金めっ
きを行った場合でも、２００〜２５０℃での溶融実験に
より、コアボールの銅と下地層の外表皮にあるはんだめ
っき中のＳｎの反応は、被覆ボールの断面観察による銅
／下地層界面にＳｎ侵入の痕跡がみられず、有効である
事が分かり、コバルト膜又はニッケル／コバルト合金膜
を上記下地層とした。That is, the present inventors conducted various experiments and found that even when cobalt plating or nickel / cobalt alloy plating was performed, the copper and the underlayer of the core ball were subjected to a melting experiment at 200 to 250 ° C. The reaction of Sn in the solder plating on the outer skin is effective because no trace of Sn intrusion is seen at the copper / underlayer interface by observing the cross section of the coated ball, and the cobalt film or the nickel / cobalt alloy film is effective. Was used as the underlayer.
【００４６】図２（ａ）及び（ｂ）は本発明の実施の形
態による複合マイクロボールの製造装置を示す断面図
で、（ａ）は正逆回転状態、（ｂ）は回転停止状態を示
している。図３は図２の複合マイクロボール製造装置の
陰極部分を示す断面図である。FIGS. 2A and 2B are cross-sectional views showing a composite microball manufacturing apparatus according to an embodiment of the present invention, wherein FIG. 2A shows a forward and reverse rotation state, and FIG. 2B shows a rotation stop state. ing. FIG. 3 is a sectional view showing a cathode portion of the composite microball manufacturing apparatus of FIG.
【００４７】図２（ａ）に示すように、複合マイクロボ
ールの製造装置２０は、電解槽をなす回転ドーム２１
と、回転ドーム２１内に収容される陽極２２と、めっき
液等を供給する供給ノズル２３を備えている。回転ドー
ム２１は、中心軸２４の周囲に回転する構成となってい
る。また、回転ドーム２１は、円錐台形状の外内周面を
備えた透明絶縁樹脂材料からなるカバー２５と、絶縁性
樹脂のテトラフルオロエチレン樹脂（テフロン）からな
る底板２６と、カバー２５及び底板との境界部に設けら
れたリング状のチタンからなる陰極２７及び多孔質リン
グ２８とを備えている。As shown in FIG. 2A, a composite microball manufacturing apparatus 20 includes a rotating dome 21 forming an electrolytic cell.
And an anode 22 housed in the rotating dome 21 and a supply nozzle 23 for supplying a plating solution or the like. The rotating dome 21 is configured to rotate around a central axis 24. The rotating dome 21 includes a cover 25 made of a transparent insulating resin material having a truncated cone-shaped outer and inner peripheral surfaces, a bottom plate 26 made of an insulating resin, tetrafluoroethylene resin (Teflon), and a cover 25 and a bottom plate. , A ring-shaped cathode 27 made of titanium and a porous ring 28 provided at the boundary portion of.
【００４８】多孔質リング２８は、フィルター状のセラ
ミックス又はポリプロピレン焼結体等のプラスチックス
からなる。The porous ring 28 is made of filter-shaped ceramics or plastics such as sintered polypropylene.
【００４９】回転ドーム２１内には、供給ノズル２３か
らめっき液３１が供給され、多孔質リングを通して排出
される構成となっている。尚、排出されためっき液３１
は、調整処理されて再び供給ノズル２３に供給される構
成と成っている。The plating solution 31 is supplied into the rotary dome 21 from the supply nozzle 23 and discharged through the porous ring. The discharged plating solution 31
Is supplied to the supply nozzle 23 after being adjusted.
【００５０】被処理物３０は、下地めっきされた銅マイ
クロボールと、ダミーボールとの混合物から構成されて
いる。The workpiece 30 is composed of a mixture of copper microballs plated with a base and dummy balls.
【００５１】回転ドーム２１の外周囲から多孔質リング
２８を通してめっき液３１が回転ドーム２１から排出さ
れ、その量に見合う新規循環めっき液が上部の供給ノズ
ル２３から導入される。The plating solution 31 is discharged from the outer periphery of the rotating dome 21 through the porous ring 28 from the rotating dome 21, and a new circulating plating solution corresponding to the amount is introduced from the upper supply nozzle 23.
【００５２】被めっき物３０、即ち、コアボールの銅ボ
ールと後述するダミーボールが混在した物（相）が回転
ドーム２１の中心軸２４回りの矢印３２に示される正逆
回転に従って運動する構造になつている。The object to be plated 30, that is, an object (phase) in which a copper ball of a core ball and a dummy ball to be described later coexist, moves according to the forward / reverse rotation indicated by an arrow 32 around the central axis 24 of the rotating dome 21. I'm sorry.
【００５３】また、陰極２７は、めっき液３１が回転ド
ーム２１の回転時には、回転ドーム２１の回転外周に位
置する様になっている処の最外周の位置にあり、しかも
めっき浴の底板２６より、ポーラス構造部分を介して設
定される。従って、回転ドーム２１の回転時に図２
（ａ）に示される状態になる。The cathode 27 is located at the outermost position where the plating solution 31 is positioned on the outer periphery of the rotating dome 21 when the rotating dome 21 is rotating. Are set via the porous structure portion. Therefore, when the rotating dome 21 rotates, FIG.
The state shown in FIG.
【００５４】この時通電し、陰極２７から電荷を受け浴
内のコアボール達に電荷を渡すことにより、図２に示す
ように、荷電されたボールにめっき液中の陽イオンであ
るＰｂ、Ｓｎがコアボール表面に析出する。しかし、こ
のまま通電を続けると、析出金属と共にコアボールが陰
極とで凝集し、一体的に固まってしまうので、本発明の
目的で最も大切な目的を阻害する事態となる。At this time, by supplying electricity from the cathode 27 and passing the charges to the core balls in the bath, as shown in FIG. 2, Pb and Sn as cations in the plating solution are transferred to the charged balls. Precipitates on the surface of the core ball. However, if the current supply is continued as it is, the core ball is aggregated with the cathode together with the deposited metal and solidified integrally, which hinders the most important purpose of the present invention.
【００５５】しかし、図２（ｂ）に示すように、一定時
間通電後、一旦通電を中止しドーム回転も停止する事
で、陰極との付着無くボール同士の析出金属による付着
も無い条件が得られる。However, as shown in FIG. 2 (b), after energization for a certain period of time, the energization is temporarily stopped and the rotation of the dome is also stopped, so that conditions are obtained in which there is no adhesion to the cathode and no adhesion of the deposited metal between the balls. Can be
【００５６】但し、是ほど小さいボールにコアボールよ
りかなり大きい体積分のめっき層を行うには、めつきを
連続的に継続するのは無理である。よって、図２（ｂ）
の様に回転ドーム２１の回転停止により、陰極２７から
下部にあたるドームの底板２６上にボール達を流動落下
させ、凝集し実際に剥がれ難くなる寸前にボールを個々
に分離解体させる。However, in order to apply a plating layer having a considerably larger volume than a core ball to a very small ball, it is impossible to continuously apply the plating. Therefore, FIG.
When the rotation of the rotating dome 21 is stopped, the balls flow and fall from the cathode 27 onto the bottom plate 26 of the lower dome, and the balls are individually separated and disintegrated just before they are aggregated and hardly peeled off.
【００５７】次いで、回転ドーム２１を逆転させ通電さ
せて追加のめっき層生成を促す事で、陰極面も何も付着
されてない面が表面に出て電荷受け渡しがスムーズにな
る。また、ボールも一旦個々になった訳で新たに荷電さ
れるに初期と同等の状態で荷電される事となる。Next, the rotating dome 21 is reversed and energized to promote the formation of an additional plating layer, so that the surface of the cathode surface on which nothing is adhered comes out to the surface, and the charge transfer becomes smooth. In addition, the balls are charged individually in the same state as the initial state when they are individually charged once.
【００５８】基本的には、上述した動作で正転、逆転に
よる電極面が通電、非通電を交互に行う事が出来る事、
めっきされたボールどおしの付着、凝集を解消させるこ
とができる。Basically, the electrode surface can be alternately energized and de-energized by forward rotation and reverse rotation by the operation described above.
Adhesion and agglomeration of plated balls can be eliminated.
【００５９】しかし、ここで、ダミーボールとコアボー
ルとは、唯そのまま混合して、供給すれば良いのではな
く、実際には、第１に付着防止と空隙率の安定化の為の
ダミーボールの充填適正化が必要である。However, here, the dummy ball and the core ball need not be mixed and supplied as they are, but actually, first, the dummy ball for preventing adhesion and stabilizing the porosity is first used. It is necessary to optimize the filling.
【００６０】ここで、本発明の第２の実施の形態による
複合マイクロボールは、既に市場に出回っている、ＢＧ
Ａ（ボールグリッドアレイ）用の５００〜７００μｍの
様な大きな直径ボールとは、めっきやその流動化条件の
制御が全く異なっていた。そこで、本発明者らは、さま
ざまな試験を実施し、適正条件を見いだした。Here, the composite microball according to the second embodiment of the present invention is a BG that is already on the market.
The control of plating and fluidization conditions was completely different from that of a large-diameter ball having a diameter of 500 to 700 μm for A (ball grid array). Therefore, the present inventors conducted various tests and found appropriate conditions.
【００６１】つまり、コアボールが３０〜１２０μｍの
サイズの場合、ダミーボールはそのサイズは３００〜１
０００μｍが良く、１０００μｍ以上では内周壁に付着
するミストやめっきされたボールを掻き落とし難く、し
かも付着したボールの分離をさせ難く、実際１．１ｍｍ
直径のボールで試験した処、付着率は大きく増加し、本
発明に比べてΦ７０μｍのコアボールで約８％悪化した
結果が得られた。 尚、付着したボールは、厳密には瞬
時に付着が起こっているものと推定され、この２〜３個
付着した時点で速やかに分離させるのに、径の大きいボ
ールでは、却って良好な結果が得られないと判断した。That is, when the size of the core ball is 30 to 120 μm, the size of the dummy ball is 300 to 1 μm.
000 μm is good, and if it is 1000 μm or more, it is difficult to scrape off mist or plated balls adhering to the inner peripheral wall, and it is difficult to separate the adhered balls.
When the test was conducted with a ball having a diameter, the adhesion ratio was greatly increased, and a result was obtained that the core ball having a diameter of 70 μm deteriorated by about 8% as compared with the present invention. Strictly speaking, it is presumed that the adhering balls are instantaneously adhering. When these two or three balls adhere, they are quickly separated. It was determined that it could not be done.
【００６２】また、ダミーボールは、多ければ良い訳で
はなく、生産性も失われるため、実用上は適正領域を定
める事は重要である。このダミーボールが多いことは、
付着率低減に有効である。しかし、極端に多いとダミー
ボールに成膜しためっき層に取り込まれる危険が増大
し、実際に、ダミーボール及びコアボールを含む全量に
対して、コアボールの比率を４％にした場合ボール回収
率は１０乃至１５％低減し、且つボール表面の性状に凹
凸が増え好ましくない。一方、全量に対してコアボール
の比率を２０％を越えるとボール同士のめっきでの付着
が急増し、例えば３０％では、殆どのボールが付着して
しまい、良品回収を計量し難い程になった。Further, since the number of dummy balls is not always good and productivity is lost, it is important to determine an appropriate area in practical use. The fact that there are many dummy balls
It is effective for reducing the adhesion rate. However, if the ratio is extremely large, the risk of being taken in by the plating layer formed on the dummy ball increases. In fact, when the ratio of the core ball is set to 4% with respect to the total amount including the dummy ball and the core ball, the ball collection rate is increased. Is undesirably reduced by 10 to 15%, and the surface of the ball increases in irregularities. On the other hand, if the ratio of the core ball exceeds 20% with respect to the total amount, the adhesion of the balls to each other by plating increases sharply. For example, if the ratio is 30%, most of the balls adhere and it becomes difficult to measure the good product collection. Was.
【００６３】本発明の第２の実施の形態におけるコアボ
ール直径では、ダミーボールは、容積比で５〜２０％の
範囲に調整する事で殆ど問題無くめっきが進行するとい
う結果が得られた。With respect to the diameter of the core ball in the second embodiment of the present invention, the result was obtained that the plating proceeded with almost no problem by adjusting the volume ratio of the dummy ball to 5 to 20%.
【００６４】また、コアボール及びダミーボールの表面
積の総計で計算した電流密度で見ると、一般的にめっき
層の厚いめっきを行う場合数Ａ／ｄｍ2 程度の実例多い
が、本発明の実施の形態に用いたコアボールは、極めて
小さいため付着が著しく増大し、長時間の継続めっきは
不可能であった。In terms of the current density calculated from the total surface area of the core ball and the dummy ball, there are many examples of about several A / dm 2 when plating with a thick plating layer is generally performed. Since the core ball used in the embodiment was extremely small, the adhesion was remarkably increased, and long-time continuous plating was impossible.
【００６５】従って、少なくても１．０Ａ／ｄｍ2 以
上、特に３Ａ／ｄｍ2 以上では極めて凝集が多く、光沢
剤のめつき層中に混在し易くなり実装時の熱に晒される
際、ガスの発生を伴うため不都合である。さらに、電流
密度が、０．６Ａ／ｄｍ2 を越えると２０μｍ以上の成
膜が実質的にはコアボールの投入量の減少やめっき液組
成の変更など問題多く、実用的でないことが判明した。Therefore, at least 1.0 A / dm 2 or more, especially 3 A / dm 2 or more, extremely agglomerates and easily mixes in the brightener plating layer. This is inconvenient because it involves the occurrence of. Further, it was found that when the current density exceeded 0.6 A / dm 2 , film formation of 20 μm or more was not practical because of substantial problems such as a decrease in the amount of core balls charged and a change in plating solution composition.
【００６６】そして、本発明者らの、実験結果からは
０．６Ａ／ｄｍ2 未満の電流密度で制御すれば１０μｍ
以上、特に２０μｍ以上の安定成膜に極めて有効である
事が判明した。According to the experimental results of the present inventors, if the current density is controlled at a current density of less than 0.6 A / dm 2, 10 μm
As mentioned above, it turned out that it is very effective especially for the stable film formation of 20 micrometers or more.
【００６７】尚、リードＳＢ−９０Ｈという商品名のめ
っき液を使用しても、本発明以外の他例と同じ条件設定
ではめっき焼き付けの起こる領域になってしまう。Incidentally, even if a plating solution having a trade name of Lead SB-90H is used, an area where plating baking occurs will occur under the same condition setting as the other examples other than the present invention.
【００６８】本発明の実施の形態による複合マイクロボ
ールの製造例について説明する。An example of manufacturing a composite microball according to an embodiment of the present invention will be described.
【００６９】第１の実施の形態と同様にして、７０μｍ
銅ボールを得た。次に、通常の電気めっき装置に表２に
示すめっき液を充填供給して、表面に厚さ１〜２μｍの
コバルトめっき膜からなる下地層を形成した。浴操作
は、電流密度０．５〜５Ａ／ｄｍ2 とし、浴温を２０〜
２２℃に保った。なお、下地層としてニッケル／コバル
合金めっき膜を形成する場合には、下記表３に示すめっ
き液及びめっき条件で形成することができる。In the same manner as in the first embodiment, 70 μm
A copper ball was obtained. Next, the plating solution shown in Table 2 was charged and supplied to a usual electroplating apparatus, and a base layer made of a cobalt plating film having a thickness of 1 to 2 μm was formed on the surface. The bath operation was performed at a current density of 0.5 to 5 A / dm 2 and a bath temperature of 20 to
Maintained at 22 ° C. When a nickel / kobal alloy plating film is formed as an underlayer, the film can be formed using a plating solution and plating conditions shown in Table 3 below.
【００７０】[0070]
【表２】 [Table 2]
【００７１】[0071]
【表３】 [Table 3]
【００７２】次にこのボールに図２に示す電気めっき装
置を用い、下記表４に示すめっき液を充填供給して、半
田めっきを施した。被めっき物としてのボールは、平均
直径７０μｍの銅球の表面に下地層として１〜２μｍの
コバルト膜が形成されており、このコアボールの１．９
９ｇと平均直径４００μｍの鋼球からなるダミーボール
を２２２ｇとを混合して用いた。Next, the balls were filled with a plating solution shown in Table 4 below and supplied with solder by using an electroplating apparatus shown in FIG. The ball as an object to be plated has a 1-2 μm cobalt film as an underlayer formed on the surface of a copper ball having an average diameter of 70 μm.
A mixture of 9 g and a dummy ball made of steel balls having an average diameter of 400 μm was used by mixing with 222 g.
【００７３】[0073]
【表４】 [Table 4]
【００７４】浴操作は、電流１０〜１５Ａ、電圧３〜７
Ｖ、所要総時間６．０Ｈｒの条件で、電流密度０．２２
／ｄｍ2 とし、浴温を２０〜２２℃に保った。また、回
転ドーム２１の運転条件は、４．５秒回転１秒休止、正
転逆転方式、で通電は回転開始後１秒後から２．５秒間
行い、ドーム回転数は、概ね４００ｒｐｍであった。The bath operation was performed at a current of 10 to 15 A and a voltage of 3 to 7.
V, the total time required is 6.0 hours, and the current density is 0.22
/ Dm 2 and the bath temperature was maintained at 20-22 ° C. The operating conditions of the rotating dome 21 were 4.5 seconds, 1 second pause, normal rotation / reverse rotation, and energization was performed 1 second after the start of rotation for 2.5 seconds, and the dome rotation speed was approximately 400 rpm. .
【００７５】ここで、はんだめっき開発の最も難しいこ
とは、これほど小さい球体にその体積を充分越えるだけ
の厚いはんだめっき層をボール同士の付着を抑えていか
に効率良く得るかである。Here, the most difficult thing in the development of solder plating is how to efficiently obtain a thick solder plating layer having a size sufficiently exceeding the volume of such a small sphere while suppressing the adhesion between the balls.
【００７６】また、既述べたこと以外に留意しなければ
ならないこと、陰極への付着を抑える効果のひとつに、
電極自体を構成するチタン陰極の面精度である。多くの
実験結果から電極面の鏡面仕上げは当然行うが、めっき
操作で付着、生成した不要物をペーパーなどで除去した
後、鏡面仕上げ直後比較的濃度の高い（１５〜２５％程
度）苛性ソーダに１０〜２０分浸漬させ自然性酸化膜を
生成させる。この後、新たなキズなど付けぬ様注意しな
がら充分水洗浄して取り付ける事が大切である。In addition to what has to be noted besides the above, one of the effects of suppressing the adhesion to the cathode is as follows.
This is the surface accuracy of the titanium cathode constituting the electrode itself. From the results of many experiments, the electrode surface is naturally mirror-finished. However, after removing unnecessary substances adhered and generated by a plating operation with paper or the like, immediately after the mirror surface finishing, 10% of caustic soda having a relatively high concentration (about 15 to 25%) is added. Soak for ~ 20 minutes to form a natural oxide film. After this, it is important to wash with enough water and take care not to attach any new scratches.
【００７７】以上のように製造した本発明の第２の実施
の形態による複合マイクロボールにおいては、以下の精
度の複合マイクロボールが得られた。In the composite microball manufactured according to the second embodiment of the present invention, a composite microball having the following accuracy was obtained.
【００７８】まず、２０μｍ以上の外周めっき膜厚を得
ることができ、その膜厚のバラツキは、１〜３μｍで、
これは外周めっき膜厚の５％〜１５％以下にあたり、極
めて微小なバラツキを得ることができた。 First, an outer plating film thickness of 20 μm or more was obtained.
The variation in the film thickness is 1 to 3 μm,
This is equivalent to 5% to 15% or less of the outer peripheral plating film thickness.
In addition, a very small variation could be obtained.
【００７９】それゆえ、その転がり性を見ると、ボール
をマウントさせる場合に必要なことが多い要件である、
平坦な傾斜面で５度以上の傾斜角度を有する傾斜面を良
好に転がることができた。例えば、ＢＧＡ用ボール（直
径５００〜７００μｍ）でも６〜７度の傾斜面を転がれ
ば良いとされており、本発明の第２の実施の形態による
複合マイクロボールの転がり性は実用上充分といえる。 Therefore, in view of the rolling property, it is a requirement that is often necessary when mounting a ball.
A flat inclined surface having an inclination angle of 5 degrees or more could be rolled satisfactorily. For example, it is said that a BGA ball (diameter of 500 to 700 μm) only needs to roll on an inclined surface of 6 to 7 degrees, and it can be said that the rolling properties of the composite microball according to the second embodiment of the present invention are practically sufficient. .
【００８０】さらに、以上の精度が得られた結果、複合
マイクロボールは半導体パッケージにおける半導体素子
の接続電極に用いるボールとして今まで以上に高密度実
装に供し得る。Further, as a result of obtaining the above precision, the composite microball can be used as a ball used for a connection electrode of a semiconductor element in a semiconductor package, and can be used for higher density mounting than ever.
【００８１】[0081]
【発明の効果】以上説明したように、本発明によれば、
球体に厚い、例えば、片側２０μｍ以上の安定した成膜
が出来て、仕上がり形状が球形で転がり性の良いめっき
を備えた複合マイクロボールとその製造方法とを提供す
ることができる。As described above, according to the present invention,
The present invention can provide a composite microball having a thick spherical body, for example, a stable film having a thickness of 20 μm or more on one side, having a spherical finished shape and plating with good rolling properties, and a method of manufacturing the same.
【００８２】また、本発明によれば、前記複合マイクロ
ボールの製造方法を実施するための製造装置を提供する
ことができる。Further, according to the present invention, it is possible to provide a manufacturing apparatus for performing the method for manufacturing the composite microball.
【図１】本発明の第１の実施の形態による複合マイクロ
ボールの製造装置の概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of a composite microball manufacturing apparatus according to a first embodiment of the present invention.
【図２】（ａ）及び（ｂ）は本発明の実施の形態による
複合マイクロボールの製造装置を示す断面図で、（ａ）
は正逆回転状態、（ｂ）は回転停止状態を夫々示してい
る。FIGS. 2A and 2B are cross-sectional views showing a composite microball manufacturing apparatus according to an embodiment of the present invention.
Indicates a forward / reverse rotation state, and (b) indicates a rotation stop state.
【図３】図２の複合マイクロボール製造装置の陰極部分
を示す断面図である。FIG. 3 is a sectional view showing a cathode portion of the composite microball manufacturing apparatus of FIG. 2;
１ 内槽 ２ 外槽 ３ 陰極（電極（−）） ４ 第１の振動装置 ５ めっき液 ６ 陽極（電極（＋）） ７ Ｃｕボール ８ 第２の振動装置 １０ 電気めっき装置 １３ 冷却液 １４ 間隙保持部材 ２０ 複合マイクロボールの製造装置 ２１ 回転ドーム ２２ 陽極 ２３ 供給ノズル ２４ 中心軸 ２５ カバー ２６ 底板 ２７ 陰極 ２８ 多孔質リング ３０ 被処理物 ３１ めっき液 ３２ 矢印 DESCRIPTION OF SYMBOLS 1 Inner tank 2 Outer tank 3 Cathode (electrode (-)) 4 First vibrator 5 Plating solution 6 Anode (electrode (+)) 7 Cu ball 8 Second vibrator 10 Electroplating apparatus 13 Coolant 14 Gap holding Member 20 Composite microball manufacturing apparatus 21 Rotating dome 22 Anode 23 Supply nozzle 24 Central axis 25 Cover 26 Bottom plate 27 Cathode 28 Porous ring 30 Workpiece 31 Plating solution 32 Arrow
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｃ２５Ｄ 7/12 Ｈ０１Ｌ 21/92 ６０４Ｂ ６０２Ｄ ６０３Ｂ (72)発明者 山口 稔 富山県富山市岩瀬古志町２番地 東京タ ングステン株式会社富山製作所内 (56)参考文献 特開 平８−139097（ＪＰ，Ａ) 特開 平８−213400（ＪＰ，Ａ) 特開 平11−117087（ＪＰ，Ａ) 特開 平11−92994（ＪＰ，Ａ) 特開 平８−191073（ＪＰ，Ａ) 特開 平８−17972（ＪＰ，Ａ) 特開 昭59−41489（ＪＰ，Ａ) 特表2002−502916（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 H01L 21/60 311 B22F 1/02 B23K 35/40 340 C25D 3/56 C25D 7/12 Continuation of the front page (51) Int.Cl. 7 Identification code FI C25D 7/12 H01L 21/92 604B 602D 603B (72) Inventor Minoru Yamaguchi 2nd Iwase Koshimachi, Toyama-shi, Toyama Pref. (56) References JP-A-8-139097 (JP, A) JP-A-8-213400 (JP, A) JP-A-11-117087 (JP, A) JP-A-11-92994 (JP, A) Japanese Unexamined Patent Application, First Publication No. Hei 8-19173 (JP, A) Japanese Unexamined Patent Publication No. Hei 8-17972 (JP, A) Japanese Unexamined Patent Publication No. Sho 59-41489 (JP, A) Table 2002-502916 (JP, A) .Cl. 7 , DB name) H01L 21/60 H01L 21/60 311 B22F 1/02 B23K 35/40 340 C25D 3/56 C25D 7/12
Claims (7)
おいて、前記コアボールは、３０μｍ以上で１２０μｍ
以下の均一な直径を有し、前記マイクロボールは、外径
が５０〜２００μｍの範囲内にあり、前記コアボール側
の第一層にコバルト及びニッケルの内の少なくとも一種
から実質的になる下地層と、前記下地層上の第二層に２
０μｍ以上の均一な厚さの電気半田めっき層からなる半
田被覆層を有し、前記半田被覆層の膜厚のバラツキが当
該第二層の膜厚の１０％以内であることを特徴とする複
合マイクロボール。1. A microball having copper as a core ball, wherein the core ball has a thickness of 30 μm or more and 120 μm or more.
The microball has the following uniform diameter, the microball has an outer diameter in the range of 50 to 200 μm, and the first layer on the core ball side substantially comprises at least one of cobalt and nickel. And 2 in the second layer on the underlayer.
A composite having a solder coating layer made of an electric solder plating layer having a uniform thickness of 0 μm or more, wherein the thickness variation of the solder coating layer is within 10% of the thickness of the second layer. Micro ball.
いて、前記半田は、ＰｂＳｎ、ＣｕＳｎ、ＡｇＳｎ、及
びＳｎＺｎの内の少なくとも一種からなることを特徴と
する複合マイクロボール。2. The composite microball according to claim 1, wherein the solder is made of at least one of PbSn, CuSn, AgSn, and SnZn.
造する方法であって、陰極側に配置された前記コアボー
ルを回転させて、通電非通電を行うとともに、直径が３
００〜１０００μｍ未満のダミーボールを、下地めっき
された前記コアボールが５〜２０％（容積比）以内にな
るように構成させながら、成膜中のボール付着を解消し
均一なはんだめっき層を形成することを特徴とする複合
マイクロボールの製造方法。3. The method for producing a composite microball according to claim 1, wherein the core ball disposed on the cathode side is rotated to energize and deenergize, and has a diameter of 3 mm.
A dummy ball of less than 00~1000μm, base plating
Manufacturing the composite microball , wherein the core ball is formed so as to be within 5 to 20% (volume ratio), and the adhesion of the ball during film formation is eliminated to form a uniform solder plating layer. Method.
造方法において、前記通電条件は、電流密度で０．６Ａ
／ｄｍ２未満で行うことを特徴とする複合マイクロボー
ルの製造方法。4. The method of manufacturing a composite microball according to claim 3 , wherein the energizing condition is a current density of 0.6 A.
/ Method of producing a composite micro ball and performing in dm less than 2.
造方法において、陰極側に配置された前記コアボールを
回転させて、通電、非通電を交互に行うとともに、非通
電時に前記陰極にめっきされたボール同士の付着を振動
によって解除させながら、成膜中のボール付着を解消し
均一な半田メッキ層を形成することを特徴とした複合マ
イクロボールの製造方法。5. The method of manufacturing a composite microball according to claim 3 , wherein the core ball disposed on the cathode side is rotated to energize and de-energize alternately, and the cathode is plated when the energizer is not energized. A method of manufacturing a composite microball, characterized in that the ball adhesion during film formation is eliminated and a uniform solder plating layer is formed while releasing the adhesion between the balls by vibration.
造方法において、前記半田めっき液として、フッ酸系ホ
ウフッ化浴に、ホウフッ化水素酸をＰｂ、Ｓｎの総和に
対し、０．０１〜０．２モル％添加したものを用い、電
流密度０．６Ａ／ｄｍ２未満とすることで安定した２０
μｍ以上の膜厚を形成させることを特徴とする複合マイ
クロボールの製造方法。6. The method of manufacturing a composite microball according to claim 5 , wherein the solder plating solution is a hydrofluoric acid-based borofluoride bath, and borofluoric acid is 0.01 to 0 with respect to the total amount of Pb and Sn. It used after added .2 mol%, was stabilized by a current density of 0.6 a / dm less than 2 20
A method for producing a composite microball, comprising forming a film having a thickness of at least μm.
造する装置であって、前記コアボールに通電、非通電が
交互に行える機構を備えた回転陰極と、前記回転陰極の
内側に配置された半田を含む陰極と、非通電時に前記陰
極にめっきされたボール同士の付着を解除させる振動機
構とを有する電気めっき装置からなることを特徴とする
複合マイクロボールの製造装置。7. An apparatus for manufacturing a composite microball according to claim 1 , wherein a rotating cathode provided with a mechanism capable of alternately energizing and deenergizing the core ball, and disposed inside the rotating cathode. An apparatus for manufacturing a composite microball comprising an electroplating apparatus having a cathode containing solder and a vibration mechanism for releasing adhesion of balls plated on the cathode when electricity is not supplied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36774298A JP3360250B2 (en) | 1998-03-05 | 1998-12-24 | COMPOSITE MICRO BALL, ITS MANUFACTURING METHOD AND MANUFACTURING APPARATUS |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5307998 | 1998-03-05 | ||
| JP10-53079 | 1998-03-05 | ||
| JP36774298A JP3360250B2 (en) | 1998-03-05 | 1998-12-24 | COMPOSITE MICRO BALL, ITS MANUFACTURING METHOD AND MANUFACTURING APPARATUS |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11317416A JPH11317416A (en) | 1999-11-16 |
| JP3360250B2 true JP3360250B2 (en) | 2002-12-24 |
Family
ID=26393788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36774298A Expired - Fee Related JP3360250B2 (en) | 1998-03-05 | 1998-12-24 | COMPOSITE MICRO BALL, ITS MANUFACTURING METHOD AND MANUFACTURING APPARATUS |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3360250B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002013205A1 (en) * | 2000-08-04 | 2002-02-14 | Sekisui Chemical Co., Ltd. | Conductive fine particles, method for plating fine particles, and substrate structural body |
| JP3694249B2 (en) * | 2001-04-25 | 2005-09-14 | 積水化学工業株式会社 | Fine particle plating method, conductive fine particles, and connection structure |
| DE10296936T5 (en) | 2001-07-31 | 2004-07-29 | Sekisui Chemical Co., Ltd. | Process for the production of electroconductive particles |
| JP2003293191A (en) * | 2001-07-31 | 2003-10-15 | Sekisui Chem Co Ltd | Method for producing electroconductive fine particle |
| JP4725051B2 (en) * | 2004-08-04 | 2011-07-13 | 株式会社村田製作所 | Plating method and plating apparatus |
| JP2007046087A (en) * | 2005-08-09 | 2007-02-22 | Millenium Gate Technology Co Ltd | Metallic ball |
| JP2007075856A (en) * | 2005-09-14 | 2007-03-29 | Nippon Steel Materials Co Ltd | Cu CORE BALL |
| JP5765606B2 (en) * | 2009-02-20 | 2015-08-19 | 日立金属株式会社 | Manufacturing method of composite ball for electronic parts |
| JP5637428B2 (en) * | 2010-02-02 | 2014-12-10 | 日立金属株式会社 | Plating equipment |
| JP5713226B2 (en) * | 2010-03-01 | 2015-05-07 | 日立金属株式会社 | Plating equipment |
| JP5367924B1 (en) * | 2012-03-23 | 2013-12-11 | 株式会社Ｎｅｏｍａｘマテリアル | Solder-coated ball and method for manufacturing the same |
| KR101858884B1 (en) * | 2013-11-05 | 2018-05-16 | 센주긴조쿠고교 가부시키가이샤 | Cu CORE BALL, SOLDER PASTE, FORMED SOLDER, AND SOLDER JOINT |
| CN117086426B (en) * | 2023-10-19 | 2024-02-23 | 山东富锐光学科技有限公司 | Self-balancing method of laser radar rotating part based on brazing mechanism |
-
1998
- 1998-12-24 JP JP36774298A patent/JP3360250B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11317416A (en) | 1999-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3360250B2 (en) | COMPOSITE MICRO BALL, ITS MANUFACTURING METHOD AND MANUFACTURING APPARATUS | |
| JP3874911B2 (en) | Plating method for micro plastic balls | |
| US6518667B1 (en) | Semiconductor package using micro balls and production method thereof | |
| TWI267419B (en) | Solder composition and method for forming bump by using the same | |
| TWI533957B (en) | Precoated with solder paste | |
| KR20040019089A (en) | Method for Producing Electroconductive Particles | |
| US7226660B2 (en) | Conductive fine particles, method for plating fine particles, and substrate structural body | |
| JP6149306B2 (en) | Semiconductor structure and manufacturing method thereof | |
| JP4665071B1 (en) | Method and apparatus for forming tin or solder precoat film | |
| US7045388B2 (en) | Semiconductor device provided with low melting point metal bumps | |
| JP4372690B2 (en) | Method and apparatus for forming solder bumps | |
| TW202120704A (en) | Sn-bi-in-based low melting-point joining member, production method therefor, semiconductor electronic circuit, and mounting method therefor | |
| EP1028180B1 (en) | Method for producing very small metal ball | |
| JP3694249B2 (en) | Fine particle plating method, conductive fine particles, and connection structure | |
| JPH1174311A (en) | Semiconductor package | |
| JP5108456B2 (en) | Conductive fine particles | |
| JP4112946B2 (en) | Lead-free bonding material, solder paste and bonding method | |
| EP1329911A1 (en) | Conductive fine particles, method for plating fine particles, and substrate structural body | |
| JPH09307016A (en) | Ball grid array | |
| JP4016040B2 (en) | Method for producing conductive fine particles | |
| JP2003293191A (en) | Method for producing electroconductive fine particle | |
| KR101196972B1 (en) | Method of manufacturing composite ball for electronic parts | |
| JPS61264743A (en) | Projecting electrode forming method to semiconductor integrated circuit | |
| JP2005019430A (en) | Method and equipment for forming post bump of wafer chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20020911 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071018 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081018 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081018 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091018 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101018 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101018 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111018 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121018 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131018 Year of fee payment: 11 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |