JP3344289B2 - Mounting method of work with bump - Google Patents

Mounting method of work with bump

Info

Publication number
JP3344289B2
JP3344289B2 JP19354297A JP19354297A JP3344289B2 JP 3344289 B2 JP3344289 B2 JP 3344289B2 JP 19354297 A JP19354297 A JP 19354297A JP 19354297 A JP19354297 A JP 19354297A JP 3344289 B2 JP3344289 B2 JP 3344289B2
Authority
JP
Japan
Prior art keywords
bumps
work
bump
solder
molten solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP19354297A
Other languages
Japanese (ja)
Other versions
JPH1140610A (en
Inventor
満 大園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP19354297A priority Critical patent/JP3344289B2/en
Publication of JPH1140610A publication Critical patent/JPH1140610A/en
Application granted granted Critical
Publication of JP3344289B2 publication Critical patent/JP3344289B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75267—Flame torch, e.g. hydrogen torch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/8123—Polychromatic or infrared lamp heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、バンプ付ワークを
基板の電極に半田付けして実装するバンプ付ワークの実
装方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a work with bumps, the method including soldering the work with bumps to electrodes of a substrate.

【０００２】[0002]

【従来の技術】フリップチップなどのバンプ付ワークを
基板に実装する方法として、基板の電極上に予め半田バ
ンプを形成し、この半田バンプにワークのバンプを半田
付けにより接合する方法が用いられている。この方法
は、予めワークのバンプか基板の電極上の半田バンプの
いずれかにフラックスを塗布した後に、バンプ付ワーク
を圧着ツールで保持して半田バンプ上に着地させ、圧着
ツールに設けられた加熱手段によりワークを介して半田
バンプを加熱し、半田バンプを溶融させて半田付けする
ものである。半田付けに使用されるフラックスは、時間
の経過とともに基板の回路面を腐食させる作用があるた
め、信頼性が重要とされる用途においては半田付け後に
フラックスを除去するための洗浄を必要とする。2. Description of the Related Art As a method of mounting a work with a bump such as a flip chip on a substrate, a method of forming a solder bump in advance on an electrode of the substrate and joining the work bump to the solder bump by soldering is used. I have. In this method, after applying flux in advance to either the bump of the work or the solder bump on the electrode of the substrate, the work with the bump is held by the crimping tool and lands on the solder bump, and the heating provided on the crimping tool is performed. The solder bumps are heated by means of heating the solder bumps through the work, and the solder bumps are melted and soldered. The flux used for soldering has a function of corroding the circuit surface of the board with the passage of time. Therefore, in an application where reliability is important, cleaning for removing the flux after soldering is required.

【０００３】[0003]

【発明が解決しようとする課題】しかしながら、従来簡
便に用いられてきたフロンなどの溶剤の使用が規制され
たことから、洗浄工程はより複雑・高コスト化している
ため、極力洗浄を必要としない、すなわちフラックスを
使用しない実装方法が求められていた。However, since the use of a solvent such as chlorofluorocarbon, which has been conventionally used in a simple manner, has been regulated, the cleaning process has become more complicated and costly. That is, there has been a demand for a mounting method that does not use flux.

【０００４】またフリップチップなどのワークは熱に弱
いため、過度に熱を加えると品質劣化の原因となること
から、実装に際しては極力ワークに熱を加えず、熱ダメ
ージが少ない実装方法が望まれていた。[0004] Also, since a work such as a flip chip is weak to heat, excessive heating may cause deterioration of quality. Therefore, a mounting method which does not apply heat to the work as much as possible and has little heat damage is desired. I was

【０００５】さらに、チップの機能部の上面に半田バン
プが形成されている場合には、実装時の荷重（例えば３
０ｇ／バンプ）でチップにダメージが発生する場合があ
るため、極力低荷重での実装が望まれていた。Further, when solder bumps are formed on the upper surface of the functional portion of the chip, a load (for example, 3
(0 g / bump) may cause damage to the chip, so mounting with as low a load as possible has been desired.

【０００６】そこで本発明は、フラックスを使用する必
要がなく、しかもワークに与える熱ダメージや、実装荷
重によるダメージが少ないバンプ付ワークの実装方法を
提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of mounting a work with bumps, which does not require the use of a flux, and which causes less thermal damage to the work and less damage due to a mounting load.

【０００７】[0007]

【課題を解決するための手段】請求項１記載のバンプ付
ワークの実装方法は、基板の電極上に形成された半田バ
ンプにバンプ付ワークを半田付けするバンプ付ワークの
実装方法であって、前記半田バンプを局所加熱手段によ
り上方から加熱して溶融半田とする工程と、この溶融半
田の表面の酸化膜を部分的に破壊する工程と、前記溶融
半田の上にバンプ付ワークのバンプを着地させてこのバ
ンプの先端部を前記溶融半田中に埋没させる工程と、前
記溶融半田を冷却固化させて前記バンプを基板の電極上
に半田付けする工程とを含む。According to a first aspect of the present invention, there is provided a method for mounting a work with bumps, the method comprising: mounting a work with bumps on solder bumps formed on electrodes of a substrate. A step of heating the solder bumps from above by a local heating means to form molten solder; a step of partially destroying an oxide film on the surface of the molten solder; and a step of landing a bump of a work with a bump on the molten solder. A step of burying the tip of the bump in the molten solder; and a step of cooling and solidifying the molten solder and soldering the bump on an electrode of a substrate.

【０００８】請求項２記載のバンプ付ワークの実装方法
は、請求項１記載のバンプ付ワークの実装方法であっ
て、前記酸化膜を部分的に破壊する工程が、加熱ガスを
溶融半田に吹きつけて酸化膜を部分的に薄膜化するよう
にした。According to a second aspect of the present invention, in the method of mounting a work with bumps according to the first aspect, the step of partially destroying the oxide film includes blowing a heating gas to the molten solder. Then, the oxide film was partially thinned.

【０００９】請求項３記載のバンプ付ワークの実装方法
は、請求項１記載のバンプ付ワークの実装方法であっ
て、前記酸化膜を部分的に破壊する工程が、前記バンプ
を前記溶融半田上に着地させる際に、振動付与手段によ
りバンプ付ワークを溶融半田に対して相対的に振動させ
るようにした。According to a third aspect of the present invention, in the method of mounting a work with bumps according to the first aspect, the step of partially destroying the oxide film includes the steps of: At the time of landing, the work with bumps is caused to vibrate relatively to the molten solder by the vibration applying means.

【００１０】[0010]

【発明の実施の形態】各請求項記載の本発明によれば、
基板の電極上に形成された半田バンプを局所加熱手段に
より溶融させ、溶融半田の表面の酸化膜を部分的に破壊
してバンプ付ワークのバンプを溶融半田中に埋没させる
ことにより、バンプ付ワークに与える熱ダメージが少な
く、しかもフラックスを使用せずにバンプ付ワークを基
板に半田付けして実装することができる。According to the present invention described in each claim,
The solder bumps formed on the electrodes of the substrate are melted by local heating means, the oxide film on the surface of the molten solder is partially broken, and the bumps of the work with the bumps are buried in the molten solder, thereby forming the work with the bumps. The work with bumps can be soldered and mounted on the substrate without using any flux.

【００１１】（実施の形態１）図１、図２、図３、図
４、図５は、本発明の実施の形態１のバンプ付ワークの
実装装置の正面図、図６（ａ），（ｂ），（ｃ），
（ｄ）は同半田バンプの部分拡大図である。(Embodiment 1) FIGS. 1, 2, 3, 4, and 5 are front views of an apparatus for mounting a work with bumps according to Embodiment 1 of the present invention, and FIGS. b), (c),
(D) is a partial enlarged view of the same solder bump.

【００１２】まず図１を参照してバンプ付ワークの実装
装置について説明する。図１において基板ステージ１上
には基板２が載置されており、基板２の電極２ａ上には
予め半田バンプ３が形成されている。この半田バンプ３
はメッキ法やレベラ法などによってプリコート部として
形成されている。基板ステージ１の上方には左右２個の
ホットガン４が配設されている。ホットガン４はガス供
給部５から供給される窒素ガスなどの気体を加熱して基
板２の半田バンプ３に上方より吹き付け、半田バンプ３
を局所的に加熱する。すなわち、ホットガン４は半田バ
ンプ３の局所加熱手段となっている。First, an apparatus for mounting a work with bumps will be described with reference to FIG. In FIG. 1, a substrate 2 is mounted on a substrate stage 1, and solder bumps 3 are formed on electrodes 2a of the substrate 2 in advance. This solder bump 3
Is formed as a precoat portion by a plating method or a leveler method. Above the substrate stage 1, two left and right hot guns 4 are arranged. The hot gun 4 heats a gas such as a nitrogen gas supplied from a gas supply unit 5 and blows the gas onto the solder bumps 3 of the substrate 2 from above.
Is locally heated. That is, the hot gun 4 serves as local heating means for the solder bumps 3.

【００１３】基板ステージ１の上方には圧着ツール６が
配設されている。圧着ツール６はバンプ付ワーク７を真
空吸着して保持し、圧着ツール６を下降させることによ
りバンプ付ワーク７のバンプ８を半田バンプ３上に着地
させて基板２の電極２ａに半田付けして実装する。８ａ
はバンプ８をワイヤボンディングで形成した際に生じた
テール（ワイヤの残り）である。A pressure bonding tool 6 is provided above the substrate stage 1. The crimping tool 6 holds the work 7 with a bump by vacuum suction and lowers the crimping tool 6 so that the bump 8 of the work 7 with a bump lands on the solder bump 3 and is soldered to the electrode 2 a of the substrate 2. Implement. 8a
Is a tail (remaining wire) generated when the bump 8 is formed by wire bonding.

【００１４】このバンプ付ワークの実装装置は上記のよ
うな構成より成り、次に動作を説明する。まず図２に示
すように、基板ステージ１上に基板２が載置される。基
板２の電極２ａ上には半田バンプ３が形成されている。
次いで図３に示すようにガス供給部５を駆動して窒素ガ
スをホットガン４に供給し、ホットガン４の先端部から
高温の窒素ガスを半田バンプ３に対して上方から吹きつ
ける（矢印ａ参照）。これにより半田バンプ３は局所的
に加熱されて溶融する。This mounting apparatus for a work with bumps has the above-described configuration. Next, the operation will be described. First, as shown in FIG. 2, the substrate 2 is placed on the substrate stage 1. The solder bumps 3 are formed on the electrodes 2 a of the substrate 2.
Next, as shown in FIG. 3, the gas supply unit 5 is driven to supply nitrogen gas to the hot gun 4, and high-temperature nitrogen gas is blown from above to the solder bumps 3 from the tip of the hot gun 4 (see arrow a). . Thereby, the solder bumps 3 are locally heated and melted.

【００１５】この状態で、図４に示すように、バンプ付
ワーク７を吸着した圧着ツール６が下降し、半田バンプ
３上にバンプ８を着地させる。以上の経過における半田
バンプ３の状態について、図６を参照して説明する。図
６（ａ）は、半田バンプ３が加熱される以前の固体の状
態を示しており、このとき半田バンプ３の表面は酸化さ
れて酸化膜３ａを生じている。次に図６（ｂ）にて、高
温の窒素ガス（矢印ａ）で加熱されることにより半田バ
ンプ３は溶融し、溶融半田３’となる。In this state, as shown in FIG. 4, the crimping tool 6 that has sucked the work 7 with the bump is lowered, and the bump 8 is landed on the solder bump 3. The state of the solder bump 3 during the above process will be described with reference to FIG. FIG. 6A shows a solid state before the solder bump 3 is heated. At this time, the surface of the solder bump 3 is oxidized to form an oxide film 3a. Next, in FIG. 6B, the solder bump 3 is melted by being heated by a high-temperature nitrogen gas (arrow a), and becomes a molten solder 3 '.

【００１６】このとき、酸化膜３ａが溶融半田３’の表
面を包み込んでいるため、溶融半田３’は流動せずに略
半球状の形状を保っている。この上方からの窒素ガスに
よる加熱を継続すると、図６（ｃ）に示すように、溶融
半田３’の先端部（矢印ｂの範囲）の酸化膜３ａは周辺
部に吹き寄せられて部分的に薄膜化し、破壊される。こ
のとき、破壊される酸化膜３ａの範囲は部分的であるた
め、溶融半田３’は流動化するには至らない。At this time, since the oxide film 3a wraps around the surface of the molten solder 3 ', the molten solder 3' does not flow and maintains a substantially hemispherical shape. When the heating by the nitrogen gas from above is continued, as shown in FIG. 6C, the oxide film 3a at the tip portion (in the range of the arrow b) of the molten solder 3 'is blown to the peripheral portion and partially thinned. And is destroyed. At this time, since the range of the broken oxide film 3a is partial, the molten solder 3 'does not flow.

【００１７】この状態で圧着ツール６を下降させてバン
プ８を溶融半田３’に着地させると、図６（ｄ）に示す
ように、バンプ８のテール８ａは酸化膜３ａが薄膜化し
て部分的に破壊された先端部から容易に溶融半田３’中
に侵入し、バンプ８の先端部は溶融半田３’中に埋没す
る。この後、ガス供給部５の駆動を停止し、ホットガン
４による加熱を停止すると、溶融半田３’は冷却固化し
てバンプ８を基板２の電極２ａに接合する。図５はこの
ようにしてバンプ付ワーク７が基板２に実装された後
に、圧着ツール６が上昇している状態を示している。In this state, when the crimping tool 6 is lowered to land the bump 8 on the molten solder 3 ', as shown in FIG. 6D, the tail 8a of the bump 8 is partially reduced because the oxide film 3a is thinned. The tip of the bump 8 easily penetrates into the molten solder 3 'from the broken tip. Thereafter, when the driving of the gas supply unit 5 is stopped and the heating by the hot gun 4 is stopped, the molten solder 3 ′ is cooled and solidified, and the bump 8 is joined to the electrode 2 a of the substrate 2. FIG. 5 shows a state in which the crimping tool 6 is raised after the work 7 with bumps is mounted on the substrate 2 in this manner.

【００１８】（実施の形態２）図７は本発明の実施の形
態２のバンプ付ワークの実装装置の正面図、図８
（ａ），（ｂ），（ｃ）は同半田バンプの部分拡大図で
ある。図７において、基板ステージ１は上面を箱形のシ
ールド部材１１で覆われている。シールド部材１１に
は、基板２の範囲に対応して開口部１１ａが設けられて
おり、この開口部１１ａから基板ステージ１上に基板２
を載置する。シールド部材１１の側面にはガス導入口１
２が開口されており、ここに第２のホットガン４ａが装
着されている。ガス供給部５から供給される窒素ガスは
第２のホットガン４ａにより加熱されてガス導入口１２
よりシールド部材１１の内部に導入され、基板２を加熱
する。このシールド部材１１や、第２のホットガン４ａ
は半田バンプ３を予熱する予熱手段となっている。(Embodiment 2) FIG. 7 is a front view of an apparatus for mounting a work with bumps according to Embodiment 2 of the present invention.
(A), (b), (c) is a partial enlarged view of the same solder bump. In FIG. 7, the upper surface of the substrate stage 1 is covered with a box-shaped shield member 11. The shield member 11 is provided with an opening 11a corresponding to the range of the substrate 2, and the substrate 2 is placed on the substrate stage 1 through the opening 11a.
Is placed. A gas inlet 1 is provided on the side of the shield member 11.
2 is opened, and a second hot gun 4a is mounted here. The nitrogen gas supplied from the gas supply unit 5 is heated by the second hot gun 4a and
The substrate 2 is further introduced into the shield member 11 and heats the substrate 2. The shield member 11 and the second hot gun 4a
Are preheating means for preheating the solder bumps 3.

【００１９】また、ガス供給部５から供給される窒素ガ
スは、基板ステージ１の上方に配設されたホットガン４
により加熱され、基板２の半田バンプ３に上方から吹き
付けられて半田バンプ３を局所的に加熱する。基板ステ
ージ１の上方には圧着ツール６が配設されている。圧着
ツール６の側面には振動付与手段としての振動子１３が
設けられている。振動子１３を駆動すると、圧着ツール
６は水平方向に振動し、圧着ツール６に保持されたバン
プ付ワーク７のバンプ８も同方向に振動する。The nitrogen gas supplied from the gas supply unit 5 is supplied to a hot gun 4 provided above the substrate stage 1.
And is blown from above onto the solder bumps 3 on the substrate 2 to locally heat the solder bumps 3. A crimping tool 6 is provided above the substrate stage 1. A vibrator 13 as a vibration applying means is provided on a side surface of the crimping tool 6. When the vibrator 13 is driven, the pressure bonding tool 6 vibrates in the horizontal direction, and the bumps 8 of the work 7 with bumps held by the pressure bonding tool 6 also vibrate in the same direction.

【００２０】このバンプ付ワークの実装装置の構造は上
記のように成り、次に動作を図７，図８により説明す
る。図７において、基板ステージ１上には基板２が載置
されており、シールド部材１１の内部には、第２のホッ
トガン４ａから加熱された窒素ガスが導入され、基板２
を加熱して所定の温度まで予熱する。次いで、基板ステ
ージ１の上方のホットガン４から加熱された窒素ガスを
基板２の半田バンプ３に吹きつけることにより半田バン
プ３は溶融する。The structure of the mounting device for a work with bumps is as described above. Next, the operation will be described with reference to FIGS. In FIG. 7, a substrate 2 is placed on a substrate stage 1, and a heated nitrogen gas is introduced into a shield member 11 from a second hot gun 4a.
Is heated and preheated to a predetermined temperature. Next, a nitrogen gas heated from a hot gun 4 above the substrate stage 1 is blown onto the solder bumps 3 on the substrate 2 to melt the solder bumps 3.

【００２１】以下、図８を参照して説明する。図８
（ａ）は、半田バンプ３が加熱され溶融半田３’となっ
た状態を示している。溶融半田３’の表面には、酸化膜
３ａが生じている。次に、圧着ツール６を下降させ、図
８（ｂ）に示すようにバンプ付ワーク７のバンプ８の先
端部を溶融半田３’に着地させる。このとき、振動子１
３を駆動してバンプ８を溶融半田３’に対して相対的に
振動させることにより、溶融半田３’の先端部の酸化膜
３ａが部分的に破壊される。この状態で圧着ツール６を
更に下降させると、バンプ８の先端部は溶融半田３’中
に埋没する。この後、ホットガン４，４ａによる加熱を
停止すると、溶融半田３’は冷却固化し、図８（ｃ）に
示すようにバンプ８は基板２の電極２ａに半田付けさ
れ、バンプ付ワーク７の実装が完了する。Hereinafter, description will be made with reference to FIG. FIG.
(A) has shown the state where the solder bump 3 was heated and became the molten solder 3 '. An oxide film 3a is formed on the surface of the molten solder 3 '. Next, the crimping tool 6 is lowered, and the tip of the bump 8 of the work 7 with bumps lands on the molten solder 3 'as shown in FIG. 8B. At this time, vibrator 1
By driving the bump 3 and causing the bump 8 to vibrate relative to the molten solder 3 ′, the oxide film 3 a at the tip of the molten solder 3 ′ is partially broken. When the crimping tool 6 is further lowered in this state, the tip of the bump 8 is buried in the molten solder 3 '. Thereafter, when the heating by the hot guns 4 and 4a is stopped, the molten solder 3 'is cooled and solidified, and the bumps 8 are soldered to the electrodes 2a of the substrate 2 as shown in FIG. Is completed.

【００２２】このようにして、基板２の半田バンプ３を
局所的に加熱して溶融させ、溶融半田３’の表面の酸化
膜３ａを部分的に破壊してバンプ８の先端部を溶融半田
３’中に埋没させることにより、低荷重で実装でき、ワ
ークに熱ダメージや実装荷重によるダメージを与えるこ
となく、しかもフラックスを使用せずにバンプ付ワーク
７を基板２に半田付けして実装することができる。In this manner, the solder bumps 3 on the substrate 2 are locally heated and melted, the oxide film 3a on the surface of the molten solder 3 'is partially broken, and the tips of the bumps 8 are melted. By burying it inside, it can be mounted with a low load, soldering the work 7 with bumps to the board 2 without causing any damage to the work by heat or mounting load, and without using flux. Can be.

【００２３】本発明は、上記実施の形態に限定されない
のであって、例えば半田バンプ３を加熱する局所加熱手
段として窒素ガスのホットガンを用いているが、要は半
田バンプを集中的に加熱して無酸素雰囲気で溶融させる
ものであれば、他の手段、例えばレーザーや赤外線ラン
プなどの加熱手段とアルゴンガスなどの還元雰囲気形成
手段を組合せて用いてもよい。The present invention is not limited to the above-described embodiment. For example, a hot gun of nitrogen gas is used as a local heating means for heating the solder bumps 3. As long as melting is performed in an oxygen-free atmosphere, other means, for example, a heating means such as a laser or an infrared lamp and a reducing atmosphere forming means such as an argon gas may be used in combination.

【００２４】[0024]

【発明の効果】本発明によれば、バンプ付ワークを基板
に実装するに際し、基板の半田バンプを局所的に加熱し
て溶融させ、溶融半田の表面の酸化膜を部分的に破壊し
てバンプを溶融半田中に埋没させてバンプを基板の電極
に半田付けするので、バンプ付ワークには過度の熱が加
えられることはなく、バンプ付ワークへの熱ダメージを
低減できるとともに、実装荷重によるダメージを低減で
きる。また、バンプの半田付けに際しフラックスを使用
しないので、実装後の洗浄を必要とせずに、基板の回路
面の腐食がなく信頼性の高いバンプ付ワークの実装を行
うことができる。According to the present invention, when a work with bumps is mounted on a substrate, the solder bumps on the substrate are locally heated and melted, and the oxide film on the surface of the molten solder is partially destroyed. The bumps are soldered to the electrodes of the board by immersing the bumps in the molten solder, so that excessive heat is not applied to the work with bumps, reducing the thermal damage to the work with bumps and the damage due to the mounting load. Can be reduced. Further, since no flux is used for soldering the bumps, it is possible to mount a highly reliable bumped work without corrosion on the circuit surface of the substrate without the need for cleaning after mounting.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施の形態１のバンプ付ワークの実装
装置の正面図FIG. 1 is a front view of an apparatus for mounting a work with bumps according to a first embodiment of the present invention;

【図２】本発明の実施の形態１のバンプ付ワークの実装
装置の正面図FIG. 2 is a front view of a mounting device for a work with bumps according to the first embodiment of the present invention;

【図３】本発明の実施の形態１のバンプ付ワークの実装
装置の正面図FIG. 3 is a front view of an apparatus for mounting a work with bumps according to the first embodiment of the present invention;

【図４】本発明の実施の形態１のバンプ付ワークの実装
装置の正面図FIG. 4 is a front view of a mounting device for a work with bumps according to the first embodiment of the present invention;

【図５】本発明の実施の形態１のバンプ付ワークの実装
装置の正面図FIG. 5 is a front view of the mounting device for a work with bumps according to the first embodiment of the present invention;

【図６】（ａ）本発明の実施の形態１の半田バンプの部
分拡大図 （ｂ）本発明の実施の形態１の半田バンプの部分拡大図 （ｃ）本発明の実施の形態１の半田バンプの部分拡大図 （ｄ）本発明の実施の形態１の半田バンプの部分拡大図6A is a partially enlarged view of a solder bump according to the first embodiment of the present invention. FIG. 6B is a partially enlarged view of a solder bump according to the first embodiment of the present invention. Partial enlarged view of bump (d) Partial enlarged view of solder bump according to Embodiment 1 of the present invention

【図７】本発明の実施の形態２のバンプ付ワークの実装
装置の正面図FIG. 7 is a front view of an apparatus for mounting a work with bumps according to a second embodiment of the present invention;

【図８】（ａ）本発明の実施の形態２の半田バンプの部
分拡大図 （ｂ）本発明の実施の形態２の半田バンプの部分拡大図 （ｃ）本発明の実施の形態２の半田バンプの部分拡大図8A is a partially enlarged view of a solder bump according to a second embodiment of the present invention. FIG. 8B is a partially enlarged view of a solder bump according to a second embodiment of the present invention. Partial enlarged view of bump

【符号の説明】[Explanation of symbols]

１ 基板ステージ ２ 基板 ２ａ 電極 ３ 半田バンプ ４ ホットガン ５ ガス供給部 ６ 圧着ツール ７ バンプ付きワーク ８ バンプ １１ シールド部材 １２ 振動子 DESCRIPTION OF SYMBOLS 1 Substrate stage 2 Substrate 2a Electrode 3 Solder bump 4 Hot gun 5 Gas supply part 6 Crimping tool 7 Work with bump 8 Bump 11 Shield member 12 Vibrator

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】基板の電極上に形成された半田バンプにバ
ンプ付ワークを半田付けするバンプ付ワークの実装方法
であって、前記半田バンプを局所加熱手段により上方か
ら加熱して溶融半田とする工程と、この溶融半田の表面
の酸化膜を部分的に破壊する工程と、前記溶融半田の上
にバンプ付ワークのバンプを着地させてこのバンプの先
端部を前記溶融半田中に埋没させる工程と、前記溶融半
田を冷却固化させて前記バンプを基板の電極上に半田付
けする工程と、を含むことを特徴とするバンプ付ワーク
の実装方法。1. A method of mounting a work with bumps, wherein the work with bumps is soldered to solder bumps formed on electrodes of a substrate, wherein the solder bumps are heated from above by local heating means to form molten solder. A step of partially destroying an oxide film on the surface of the molten solder, and a step of landing a bump of a work with a bump on the molten solder and burying the tip of the bump in the molten solder. And cooling and solidifying the molten solder to solder the bumps onto the electrodes of the substrate. 【請求項２】前記酸化膜を部分的に破壊する工程が、加
熱ガスを上方から溶融半田に吹きつけて酸化膜を部分的
に薄膜化することを特徴とする請求項１記載のバンプ付
ワークの実装方法。2. The work with a bump according to claim 1, wherein in the step of partially destroying the oxide film, a heating gas is blown from above onto the molten solder to partially reduce the thickness of the oxide film. How to implement. 【請求項３】前記酸化膜を部分的に破壊する工程が、前
記バンプを前記溶融半田上に着地させる際に、振動付与
手段によりバンプ付ワークを溶融半田に対して相対的に
振動させることを特徴とする請求項１記載のバンプ付ワ
ークの実装方法。3. The step of partially destroying the oxide film includes, when the bump lands on the molten solder, vibrating the work with bumps relative to the molten solder by a vibration applying means. The method for mounting a work with bumps according to claim 1.
JP19354297A 1997-07-18 1997-07-18 Mounting method of work with bump Expired - Lifetime JP3344289B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19354297A JP3344289B2 (en) 1997-07-18 1997-07-18 Mounting method of work with bump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19354297A JP3344289B2 (en) 1997-07-18 1997-07-18 Mounting method of work with bump

Publications (2)

Publication Number Publication Date
JPH1140610A JPH1140610A (en) 1999-02-12
JP3344289B2 true JP3344289B2 (en) 2002-11-11

Family

ID=16309811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19354297A Expired - Lifetime JP3344289B2 (en) 1997-07-18 1997-07-18 Mounting method of work with bump

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Country Link
JP (1) JP3344289B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384366B1 (en) * 2000-06-12 2002-05-07 Advanced Micro Devices, Inc. Top infrared heating for bonding operations
JP2009010430A (en) * 2008-10-15 2009-01-15 Renesas Technology Corp Method of mounting semiconductor element
JP4901933B2 (en) * 2009-09-29 2012-03-21 株式会社東芝 Manufacturing method of semiconductor device
CN116944759A (en) * 2023-09-20 2023-10-27 武汉高芯科技有限公司 Flip-chip bonding processing method with low contact resistance and flip-chip interconnection structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02207592A (en) * 1989-02-07 1990-08-17 Fujitsu Ltd Packaging of electronic component
JPH08204327A (en) * 1995-01-20 1996-08-09 Sony Corp Mounting apparatus
JP3269398B2 (en) * 1996-09-18 2002-03-25 松下電器産業株式会社 Soldering method for work with bump

Also Published As

Publication number Publication date
JPH1140610A (en) 1999-02-12

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