JP3324304B2 - Method of processing magnetic garnet single crystal film for magnetostatic wave device and apparatus for manufacturing magnetic garnet single crystal film provided with the processing means - Google Patents
Method of processing magnetic garnet single crystal film for magnetostatic wave device and apparatus for manufacturing magnetic garnet single crystal film provided with the processing meansInfo
- Publication number
- JP3324304B2 JP3324304B2 JP28532094A JP28532094A JP3324304B2 JP 3324304 B2 JP3324304 B2 JP 3324304B2 JP 28532094 A JP28532094 A JP 28532094A JP 28532094 A JP28532094 A JP 28532094A JP 3324304 B2 JP3324304 B2 JP 3324304B2
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- Prior art keywords
- single crystal
- crystal film
- magnetic garnet
- garnet single
- magnetostatic wave
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、静磁波素子用材料とし
て有用な磁性ガーネット単結晶膜の処理方法、およびそ
の処理手段を備えた磁性ガーネット単結晶膜の製造装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for processing a magnetic garnet single crystal film useful as a material for a magnetostatic wave device, and an apparatus for manufacturing a magnetic garnet single crystal film provided with the processing means.
【０００２】[0002]
【従来の技術】従来より静磁波素子には、Ｆｅ元素を含
む磁性ガーネット単結晶膜｛一般式、Ｒ１3-x Ｒ２x Ｆ
ｅ5-y Ｍy Ｏ12（以下ＲＭ・ＲＩＧと称す）｝が、重要
な材料として使われている。この中でもイットリウム・
鉄ガーネット（Ｙ3 Ｆｅ5 Ｏ12：以下ＹＩＧと称す）
は、極端に強磁性半値幅（ΔＨ）が小さく、静磁波素子
としたときに、入力信号と出力信号との差を小さくでき
るため、広く用いられている。2. Description of the Related Art Conventionally, a magnetostatic wave element has a magnetic garnet single crystal film containing an Fe element (general formula, R13 -x R2xF ).
e 5-y M y O 12 ( hereinafter referred to as RM · RIG)} have been used as an important material. Yttrium
Iron garnet (Y 3 Fe 5 O 12: hereinafter referred to as YIG)
Is extremely widely used because it has an extremely small ferromagnetic half width (ΔH) and can reduce the difference between an input signal and an output signal when a magnetostatic wave element is used.
【０００３】そして一般的に、これらＲＭ・ＲＩＧ単結
晶膜は、ＰｂＯとＢ2 Ｏ3 とを混合した溶媒に、例え
ば、ＹＩＧ単結晶を製造する場合には、Ｆｅ2 Ｏ3 とＹ
2 ０3を溶質として溶かし込み、ガドリニウム・ガリウ
ムガーネット（Ｇｄ3 Ｇａ5 Ｏ12、以下ＧＧＧと称す）
単結晶基板上に、９００℃前後でＹＩＧ単結晶薄膜を成
長させる液相エピタキシャル法（以下ＬＰＥ法と称す）
によって製造されている。[0003] In general, these RM / RIG single crystal films are mixed with a mixed solvent of PbO and B 2 O 3 , for example, when producing a YIG single crystal, Fe 2 O 3 and Y 2 are mixed.
2 0 3 narrows dissolved as a solute, gadolinium gallium garnet (Gd 3 Ga 5 O 12, hereinafter referred to as GGG)
Liquid phase epitaxial method (hereinafter referred to as LPE method) for growing a YIG single crystal thin film on a single crystal substrate at around 900 ° C.
It is manufactured by.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うにして得られたＲＭ・ＲＩＧ単結晶膜を用いて静磁波
素子を作製した場合、作製直後からＲＭ・ＲＩＧ単結晶
膜の周波数特性が経時的に徐々に変化し、数１００時間
経過後にほぼ一定値になり安定するという現象が観察さ
れている。However, when a magnetostatic wave device is manufactured using the RM / RIG single crystal film thus obtained, the frequency characteristic of the RM / RIG single crystal film changes with time immediately after the manufacture. , And a phenomenon is observed in which the value gradually becomes stable after several hundred hours, and stabilizes.
【０００５】そのため、静磁波素子として作製した後、
ある時間を経てから再度周波数特性を調整するために、
静磁波素子に周波数調整機能を付加しておく必要があ
り、これが静磁波素子の価格低減の妨げの１つとなって
いる。[0005] Therefore, after being manufactured as a magnetostatic wave element,
To adjust the frequency response again after a certain time,
It is necessary to add a frequency adjustment function to the magnetostatic wave element, which is one of the obstacles to the reduction in the price of the magnetostatic wave element.
【０００６】そこで、本発明の目的は、初期特性が経時
的に変化しない静磁波素子用磁性ガーネット単結晶膜を
得るための、磁性ガーネット単結晶膜の処理方法および
その処理手段を備えた磁性ガーネット単結晶膜の製造装
置を提供することにある。Accordingly, an object of the present invention is to provide a method for processing a magnetic garnet single crystal film for obtaining a magnetic garnet single crystal film for a magnetostatic wave device whose initial characteristics do not change with time, and a magnetic garnet provided with the processing means. An object of the present invention is to provide a single crystal film manufacturing apparatus.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明の静磁波素子用磁性ガーネット単結晶膜の処
理方法は、静磁波素子として用いる前の磁性ガーネット
単結晶膜に、予め直流磁界を加えて磁化処理を行なうこ
とを特徴とする。In order to achieve the above object, a method for treating a magnetic garnet single crystal film for a magnetostatic wave device according to the present invention comprises the steps of: And performing a magnetization process.
【０００８】そして、磁性ガーネット単結晶膜は、一般
式Ｒ１3-x Ｒ２x Ｆｅ5-y Ｍy Ｏ12（但し、Ｒ１はＹま
たはＴｂのいずれか、Ｒ２はＢｉ，Ｂ，Ｓｂおよびラン
タン系遷移元素のうち少なくとも１種類であり、ＭはＧ
ａ，Ａｌ，Ｉｎ，Ｔｌ，ＣｏおよびＮｉのうち少なくと
も１種類、または、ＭはＺｒおよびＳｉのうち少なくと
も１種類とＭｇであり、０≦ｘ＜３，０≦ｙ＜５）で表
されるものであることを特徴とする。[0008] Then, the magnetic garnet single crystal film has the general formula R1 3-x R2 x Fe 5 -y M y O 12 ( where, R1 either is Y or Tb, R2 is Bi, B, Sb and lanthanum M is at least one of transition elements;
a, at least one of Al, In, Tl, Co and Ni, or M is at least one of Zr and Si and Mg, represented by 0 ≦ x <3, 0 ≦ y <5) Characterized in that:
【０００９】さらに、磁性ガーネット単結晶膜は、Ｙ3
Ｆｅ5 Ｏ12であることを特徴とする。Further, the magnetic garnet single crystal film is made of Y 3
Characterized in that it is a Fe 5 O 12.
【００１０】また、磁性ガーネット単結晶膜の製造装置
は、その製造装置の該磁性ガーネット単結晶膜の冷却部
に、該磁性ガーネット単結晶膜を磁化処理する手段が付
設されていることを特徴とする。[0010] In the apparatus for manufacturing a magnetic garnet single crystal film, means for magnetizing the magnetic garnet single crystal film is provided in a cooling section of the magnetic garnet single crystal film of the manufacturing apparatus. I do.
【００１１】そして、磁性ガーネット単結晶膜の製造装
置は、縦型炉芯管構造の液相エピタキシャル成長装置で
あり、該縦型炉芯管の磁性ガーネット単結晶膜の冷却部
の周囲に磁化処理手段として電磁石が付設されているこ
とを特徴とする。The apparatus for producing a magnetic garnet single crystal film is a liquid phase epitaxial growth apparatus having a vertical furnace core tube structure, and a magnetizing means is provided around a cooling portion of the magnetic garnet single crystal film of the vertical furnace core tube. And an electromagnet is provided.
【００１２】[0012]
【作用】ＲＭ・ＲＩＧ単結晶の属するガーネット結晶系
は、立方晶系に属し、その単位格子は立方体を形成して
いる。ここで、磁性ガーネット結晶の磁化軸は、この立
方体単位格子の４本の対角線上に等価に存在し、この対
角線上での磁化のベクトルの方向は正方向、逆方向とも
同じ割合で存在する。通常、磁性ガーネットはキュリー
点より高温で単結晶膜の作製が行われる。そのため、作
製されたＲＭ・ＲＩＧ単結晶膜は磁化ベクトルが任意の
方向を向いており、静磁波素子として直流磁界中に配置
された場合、初期の段階では、磁化ベクトルが完全に磁
化の方向にそろっていないと考えられる。そして、時間
とともに磁化ベクトルの方位が外部磁界の方向に整列
し、これが静磁波素子としたときの経時変化の原因とな
っているものと推定される。The garnet crystal system to which the RM / RIG single crystal belongs belongs to a cubic system, and its unit cell forms a cube. Here, the magnetization axes of the magnetic garnet crystal are equivalently present on the four diagonals of the cubic unit cell, and the directions of the magnetization vectors on the diagonals are the same in both the forward and reverse directions. Normally, magnetic garnet is produced at a temperature higher than the Curie point in a single crystal film. Therefore, in the manufactured RM / RIG single crystal film, the magnetization vector is oriented in an arbitrary direction, and when placed in a DC magnetic field as a magnetostatic wave element, in the initial stage, the magnetization vector is completely in the direction of magnetization. It is thought that it is not complete. Then, the direction of the magnetization vector is aligned with the direction of the external magnetic field with time, which is presumed to be the cause of the change with time when the magnetostatic wave element is used.
【００１３】以上のメカニズムを裏付ける如く、磁性ガ
ーネット単結晶膜に、予め直流磁界を加えて磁化処理を
行なって磁化ベクトルを特定方向に揃えておくことによ
って、静磁波素子としたときの初期特性の経時的変化を
抑えることができる。To support the above mechanism, by applying a direct current magnetic field to the magnetic garnet single crystal film in advance and performing magnetization processing to align the magnetization vectors in a specific direction, the initial characteristics of the magnetostatic wave element can be improved. Changes over time can be suppressed.
【００１４】そして、このような磁化処理手段を磁性ガ
ーネット単結晶膜の製造装置の磁性ガーネット単結晶膜
の冷却部に付設しておくことによって、単結晶膜の製造
に引き続いて同一装置内で連続して磁化処理を行なうこ
とができる。[0014] By providing such a magnetizing means in the cooling unit of the magnetic garnet single crystal film of the apparatus for manufacturing a magnetic garnet single crystal film, it is possible to continuously manufacture the single crystal film in the same apparatus following the manufacture of the single crystal film. Then, the magnetization process can be performed.
【００１５】[0015]
【実施例】以下、本発明の静磁波素子用磁性ガーネット
単結晶膜の処理方法およびその処理手段を備えた磁性ガ
ーネット単結晶膜の製造装置について、その実施例を説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for processing a magnetic garnet single crystal film for a magnetostatic wave device of the present invention and an apparatus for manufacturing a magnetic garnet single crystal film provided with the processing means will be described below.
【００１６】（実施例１）まず、ＬＰＥ法により、直径
５０ｍｍのＧＧＧ基板の（１１１）面上に膜厚３０μｍ
のＹＩＧ単結晶膜を作製した。次に、このＹＩＧ単結晶
膜を半月形に切断し、その一方を、膜面に垂直に５００
ｍＴの磁界中に置いて磁化処理を行なった。このときの
温度は２５℃であり、時間は１時間であった。(Example 1) First, a film thickness of 30 μm was formed on a (111) plane of a GGG substrate having a diameter of 50 mm by the LPE method.
Was prepared. Next, this YIG single crystal film was cut into a half-moon shape, and one of the cut was made 500 mm perpendicular to the film surface.
The magnetization treatment was performed in a magnetic field of mT. At this time, the temperature was 25 ° C., and the time was 1 hour.
【００１７】このようにして得られたＹＩＧ単結晶膜を
５ｍｍ×２５ｍｍに切り出し、図１に示す構成の２ＧＨ
ｚ帯フィルタを作製し、中心周波数の経時変化を２００
０時間まで測定した。なお、図１は平面断面図であり、
１はＹＩＧ単結晶膜、２は入力トランスデューサ、３は
出力トランスデューサ、４は磁気シールド、５は磁石、
６は高周波入力端子、７は高周波出力端子である。比較
のために、同じＹＩＧ単結晶膜の残り半分から同様にフ
ィルタを作製し、中心周波数の経時変化を測定した。こ
れらの結果を図２に示す。The YIG single crystal film thus obtained is cut into a size of 5 mm × 25 mm, and is cut into a 2 GHz structure shown in FIG.
A z-band filter was manufactured, and the temporal change of the center frequency was 200
Measurements were taken up to 0 hours. FIG. 1 is a plan sectional view,
1 is a YIG single crystal film, 2 is an input transducer, 3 is an output transducer, 4 is a magnetic shield, 5 is a magnet,
6 is a high-frequency input terminal and 7 is a high-frequency output terminal. For comparison, a filter was manufactured in the same manner from the other half of the same YIG single crystal film, and the temporal change of the center frequency was measured. These results are shown in FIG.
【００１８】図２から明らかなように、ＹＩＧ単結晶膜
の磁化処理を行なわなかったものは、５００時間程度ま
では時間の経過とともに中心周波数が徐々に低下して行
き、その後、１．９ＧＨｚ弱で安定している。これに対
して、予めＹＩＧ単結晶膜の磁化処理を行なったもの
は、初期に設定した中心周波数２ＧＨｚが２０００時間
経過後まで変化していない。このように、本発明の磁性
ガーネット単結晶膜の処理方法により、経時変化のない
静磁波素子を得ることができる。As is apparent from FIG. 2, in the case where the YIG single crystal film was not subjected to the magnetization treatment, the center frequency gradually decreased with the passage of time until about 500 hours, and thereafter, was slightly lower than 1.9 GHz. And stable. On the other hand, in the case where the YIG single crystal film is magnetized in advance, the initially set center frequency of 2 GHz does not change until 2000 hours have elapsed. As described above, by the method for processing a magnetic garnet single crystal film of the present invention, it is possible to obtain a magnetostatic wave element that does not change with time.
【００１９】（実施例２）まず、ＬＰＥ法により、直径
５０ｍｍのＧＧＧ基板の（１１１）面上に膜厚３０μｍ
のＹ2.9 Ｂｉ0.1 Ｆｅ4.6 Ｇａ0.4 Ｏ12、Ｙ2.5 Ｂｉ
0.5 Ｆｅ5 Ｏ12、Ｙ2.96Ｌａ0.04Ｆｅ4.7 Ｇａ
0.3 Ｏ12、Ｙ2.8 Ｌａ0.2 Ｆｅ4.7 Ａｌ0.3 Ｏ12および
Ｔｂ1.8 Ｂ1.2 Ｆｅ5 Ｏ12膜をそれぞれ作製した。次に
これらＲＭ・ＲＩＧ単結晶膜を半月形に切断し、その一
方を、実施例１と同様に、膜面に垂直に５００ｍＴの磁
界中に置いて磁化処理を行なった。(Example 2) First, a film thickness of 30 μm was formed on the (111) plane of a GGG substrate having a diameter of 50 mm by the LPE method.
Y 2.9 Bi 0.1 Fe 4.6 Ga 0.4 O 12 , Y 2.5 Bi
0.5 Fe 5 O 12 , Y 2.96 La 0.04 Fe 4.7 Ga
0.3 O 12 , Y 2.8 La 0.2 Fe 4.7 Al 0.3 O 12 and Tb 1.8 B 1.2 Fe 5 O 12 films were produced, respectively. Next, these RM / RIG single crystal films were cut into half-moon shapes, and one of them was placed in a magnetic field of 500 mT perpendicular to the film surface and magnetized as in Example 1.
【００２０】その後、実施例１と同様に、２ＧＨｚ帯の
フィルタを作製して中心周波数の経時変化を測定した。
その結果、ＲＭ・ＲＩＧ単結晶膜の磁化処理を行なわな
かったものは、最初のうちは時間の経過とともに中心周
波数が徐々に低下する傾向を示した。これに対して、予
めＲＭ・ＲＩＧ単結晶膜の磁化処理を行なったものは、
初期に設定した中心周波数２ＧＨｚが２０００時間経過
後まで変化しなかった。Thereafter, as in the first embodiment, a filter in the 2 GHz band was manufactured, and the change over time in the center frequency was measured.
As a result, when the RM / RIG single crystal film was not subjected to the magnetization treatment, the center frequency initially tended to gradually decrease with time. On the other hand, the magnetized RM / RIG single crystal film
The initially set center frequency of 2 GHz did not change until after 2000 hours.
【００２１】（実施例３）まず、実施例１と同様に、Ｌ
ＰＥ法により、直径５０ｍｍのＧＧＧ基板の（１１１）
面上に膜厚３０μｍのＹＩＧ単結晶膜を作製した。次
に、このＹＩＧ単結晶膜を、膜面に垂直に１００ｍＴの
磁界中に置いて磁化処理を行なった。このとき、この単
結晶膜の周囲に加熱装置を配置しておいて、この加熱装
置で室温から５００℃まで１時間かけて加熱し、５００
℃に達した後直ちに冷却を始めて室温に戻し、その後磁
界からＹＩＧ単結晶膜を取り出した。(Embodiment 3) First, as in Embodiment 1, L
(111) of a GGG substrate having a diameter of 50 mm by PE method
A 30 μm-thick YIG single crystal film was formed on the surface. Next, the YIG single crystal film was subjected to a magnetization process by placing the film in a magnetic field of 100 mT perpendicular to the film surface. At this time, a heating device is placed around the single crystal film, and the heating device is used to heat the room temperature from room temperature to 500 ° C. for 1 hour.
Immediately after the temperature reached ° C, cooling was started and the temperature was returned to room temperature, and then the YIG single crystal film was taken out from the magnetic field.
【００２２】その後、実施例１と同様にしてフィルタを
作製し、中心周波数の経時変化を２０００時間まで測定
した。その結果、実施例１と同様に、初期特性変化のな
い静磁波素子が得られた。Thereafter, a filter was manufactured in the same manner as in Example 1, and the change over time of the center frequency was measured up to 2000 hours. As a result, as in Example 1, a magnetostatic wave element having no change in the initial characteristics was obtained.
【００２３】（実施例４）図３は、縦型炉芯管構造の液
相エピタキシャル成長装置であって、磁化処理手段を取
り付けたものを示す断面図である。同図において、１１
はアルミナ製の縦型筒状の炉芯管、１２ａ，１２ｂ，１
２ｃは炉芯管１１の周囲に設けたヒータ、１３は炉芯管
１１の周囲を包囲する炉体、１４は炉芯管１１の内部へ
の空気の侵入を抑制するシャッター、１５は磁性ガーネ
ット単結晶膜の原料の溶液、１６は磁性ガーネット膜の
原料を収容する白金製の坩堝、１７は坩堝１６を支持す
る支持台、１８は下地基板に形成された磁性ガーネット
単結晶膜、１９は磁性ガーネット単結晶膜１８を水平に
保持する基板保持具、２０は回転方向および上下方向に
駆動される支持棒、２１は炉体１３の上部の冷却部に取
り付けられた垂直方向に５０ｍＴの中心磁界をかけるこ
とができる電磁石である。(Embodiment 4) FIG. 3 is a sectional view showing a liquid phase epitaxial growth apparatus having a vertical furnace core tube structure, to which a magnetizing means is attached. In FIG.
Is a vertical cylindrical furnace core tube made of alumina, 12a, 12b, 1
2c is a heater provided around the furnace core tube 11, 13 is a furnace body surrounding the furnace core tube 11, 14 is a shutter for suppressing intrusion of air into the furnace core tube 11, and 15 is a magnetic garnet unit. A solution of a crystal film raw material, 16 is a platinum crucible for accommodating the magnetic garnet film raw material, 17 is a support for supporting the crucible 16, 18 is a magnetic garnet single crystal film formed on a base substrate, and 19 is a magnetic garnet. A substrate holder that holds the single crystal film 18 horizontally, 20 is a support rod that is driven in a rotating direction and a vertical direction, and 21 is a vertical magnetic field of 50 mT attached to a cooling unit above the furnace body 13. An electromagnet that can.
【００２４】以下に、本エピタキシャル成長装置を用い
たＹＩＧ単結晶膜の作製方法とその後の磁化処理方法を
示す。まず、従来と同様の方法でＹＩＧ単結晶膜を作製
した。即ち、坩堝１６内でＰｂＯ、Ｂ2 Ｏ3 を溶媒と
し、単結晶膜原料のＦｅ2 Ｏ3 、Ｙ2 Ｏ3 を加熱溶融さ
せ均一化した後、液相線と固相線の間の温度、即ち約９
００℃前後の一定温度に保持して過冷却状態にした。そ
の後、基板保持具１９で保持したＧＧＧ下地基板を浸漬
してＹＩＧ単結晶膜１８の育成を行なった。そして、原
料の溶液１５内よりＹＩＧ単結晶膜を引き上げて余分の
付着溶液を振り切った。Hereinafter, a method for producing a YIG single crystal film using the present epitaxial growth apparatus and a method for subsequent magnetization treatment will be described. First, a YIG single crystal film was produced in the same manner as in the prior art. That is, in the crucible 16, PbO and B 2 O 3 are used as a solvent, and Fe 2 O 3 and Y 2 O 3 as single crystal film raw materials are heated and melted to be uniform, and then the temperature between the liquidus line and the solidus line Ie about 9
It was kept at a constant temperature of about 00 ° C. to bring it into a supercooled state. Thereafter, the GIG base substrate held by the substrate holder 19 was immersed to grow the YIG single crystal film 18. Then, the YIG single crystal film was pulled up from the solution 15 of the raw material, and excess adhesion solution was shaken off.
【００２５】次に、このＹＩＧ単結晶膜１８を電磁石２
１の中心位置に置き、２０ｍＴの磁界を印加しながら室
温まで冷却させていった。Next, the YIG single crystal film 18 is
1 and cooled to room temperature while applying a magnetic field of 20 mT.
【００２６】その後、実施例１と同様にしてフィルタを
作製し、中心周波数の経時変化を２０００時間まで測定
した。その結果、実施例１と同様に、初期特性変化のな
い静磁波素子が得られた。Thereafter, a filter was manufactured in the same manner as in Example 1, and the change over time in the center frequency was measured up to 2000 hours. As a result, as in Example 1, a magnetostatic wave element having no change in the initial characteristics was obtained.
【００２７】なお、本実施例４においては、縦型炉芯管
構造を有する液相エピタキシャル成長装置によって磁性
ガーネット単結晶膜を作製し、得られた磁性ガーネット
単結晶膜を引き続き磁化処理する例について説明した
が、本発明はこれのみに限定されるものではない。即
ち、その他の磁性ガーネットの作製方法、例えばスパッ
タ法、ＣＶＤ法、レーザー・アブレーション法等の気相
成長法の場合においても、それら装置の冷却部に磁化処
理手段を取り付けて行なうことができる。In the fourth embodiment, an example will be described in which a magnetic garnet single crystal film is formed by a liquid phase epitaxial growth apparatus having a vertical furnace core tube structure, and the obtained magnetic garnet single crystal film is continuously magnetized. However, the present invention is not limited to this. That is, even in the case of other methods for producing a magnetic garnet, for example, a vapor phase growth method such as a sputtering method, a CVD method, and a laser ablation method, the magnetization processing means can be attached to a cooling portion of the apparatus.
【００２８】なお、上記実施例においては、磁性ガーネ
ット単結晶膜がＹ3 Ｆｅ5 Ｏ12、Ｙ2.9 Ｂｉ0.1 Ｆｅ
4.6 Ｇａ0.4 Ｏ12、Ｙ2.5 Ｂｉ0.5 Ｆｅ5 Ｏ12、Ｙ2.96
Ｌａ0.04Ｆｅ4.7 Ｇａ0.3 Ｏ12、Ｙ2.8 Ｌａ0.2 Ｆｅ
4.7 Ａｌ0.3 Ｏ12およびＴｂ1.8Ｂ1.2 Ｆｅ5 Ｏ12の場
合について説明したが、本発明はこれのみに限定される
ものではない。即ち、あらゆる磁性ガーネット単結晶膜
について、例えば、一般式Ｒ１3-x Ｒ２x Ｆｅ5-y Ｍy
Ｏ12（但し、０≦ｘ＜３，０≦ｙ＜５）で表されるＲＭ
・ＲＩＧにおいて、Ｒ１がＹまたはＴｂのいずれかであ
り、Ｒ２がＢｉ，Ｂ，Ｓｂおよびランタン系遷移元素の
うち少なくとも１種類であり、ＭがＧａ，Ａｌ，Ｉｎ，
Ｔｌ，ＣｏおよびＮｉのうち少なくとも１種類、また
は、ＭがＺｒおよびＳｉのうち少なくとも１種類とＭｇ
であるものについて同様の効果を得ることができる。In the above embodiment, the magnetic garnet single crystal film is made of Y 3 Fe 5 O 12 , Y 2.9 Bi 0.1 Fe
4.6 Ga 0.4 O 12 , Y 2.5 Bi 0.5 Fe 5 O 12 , Y 2.96
La 0.04 Fe 4.7 Ga 0.3 O 12 , Y 2.8 La 0.2 Fe
The case of 4.7 Al 0.3 O 12 and Tb 1.8 B 1.2 Fe 5 O 12 has been described, but the present invention is not limited to this. That is, for any magnetic garnet single crystal film, for example, the general formula R1 3-x R2 x Fe 5 -y M y
RM represented by O 12 (where 0 ≦ x <3, 0 ≦ y <5)
In RIG, R1 is either Y or Tb, R2 is at least one of Bi, B, Sb and a lanthanum-based transition element, and M is Ga, Al, In,
At least one of Tl, Co and Ni, or M is at least one of Zr and Si and Mg
And the same effect can be obtained.
【００２９】また、上記磁化処理条件において、外部磁
界の強さ、磁界の印加時間、磁界印加時の温度、膜面に
対する磁界の方向等は密接に関係しており、また、磁性
ガーネット単結晶膜の材料系によっても異なってくる。
一般的な傾向としては、外部磁界を強くすれば時間を短
くでき、温度を高くすると外部磁界を小さくできる。ま
た、材料の物性値である飽和磁化（４πＭｓ）が小さい
ほど外部磁界を小さくできる。Further, under the above magnetizing conditions, the strength of the external magnetic field, the time of application of the magnetic field, the temperature at the time of applying the magnetic field, the direction of the magnetic field with respect to the film surface, and the like are closely related. It depends on the material system.
As a general tendency, the time can be shortened by increasing the external magnetic field, and the external magnetic field can be reduced by increasing the temperature. Further, the smaller the saturation magnetization (4πMs), which is the physical property value of the material, the smaller the external magnetic field.
【００３０】[0030]
【発明の効果】以上の説明で明らかなように、磁性ガー
ネット単結晶膜に、予め直流磁界を加えて磁化処理を行
なって磁化ベクトルを特定方向に揃えておくことによっ
て、初期特性が経時的に変化しない静磁波素子用磁性ガ
ーネット単結晶膜を得ることができる。したがって、こ
の磁性ガーネット単結晶膜を用いることにより、初期特
性の経時変化がない静磁波素子を得ることができる。As is apparent from the above description, the initial characteristics can be reduced with time by applying a DC magnetic field to the magnetic garnet single crystal film in advance and performing magnetization processing to align the magnetization vectors in a specific direction. A magnetic garnet single crystal film for a magnetostatic wave element that does not change can be obtained. Therefore, by using this magnetic garnet single crystal film, it is possible to obtain a magnetostatic wave element in which initial characteristics do not change with time.
【００３１】また、この磁化処理は、磁性ガーネット単
結晶膜の製造装置の磁性ガーネット単結晶膜の冷却部に
磁化処理手段を付設しておくことにより、単結晶膜の製
造に引き続いて、同一装置内で連続して磁化処理を行な
うことができる。In addition, the magnetizing process is performed by providing a magnetizing means in the cooling unit of the magnetic garnet single crystal film of the magnetic garnet single crystal film manufacturing apparatus, so that the same apparatus can be used subsequently to the single crystal film manufacturing. The magnetizing process can be performed continuously within.
【図面の簡単な説明】[Brief description of the drawings]
【図１】静磁波フィルタの一例を示す平面断面図であ
る。FIG. 1 is a plan sectional view showing an example of a magnetostatic wave filter.
【図２】図１に示す静磁波フィルタの中心周波数の経時
変化を示すグラフである。FIG. 2 is a graph showing a change over time of a center frequency of the magnetostatic wave filter shown in FIG.
【図３】本発明の磁性ガーネット単結晶膜の製造装置の
一例を示す断面図である。FIG. 3 is a cross-sectional view showing an example of a magnetic garnet single crystal film manufacturing apparatus of the present invention.
１ ＹＩＧ単結晶膜 ２ 入力トランスデューサ ３ 出力トランスデューサ ４ 磁気シールド ５ 磁石 ６ 高周波入力端子 ７ 高周波出力端子 １１ 炉芯管 １２ａ，１２ｂ，１２ｃ ヒータ １３ 炉体 １４ シャッター １５ 原料の溶液 １６ 坩堝 １７ 支持台 １８ 磁性ガーネット単結晶膜 １９ 基板保持具 ２０ 支持棒 ２１ 電磁石 DESCRIPTION OF SYMBOLS 1 YIG single crystal film 2 Input transducer 3 Output transducer 4 Magnetic shield 5 Magnet 6 High frequency input terminal 7 High frequency output terminal 11 Furnace core tube 12a, 12b, 12c Heater 13 Furnace 14 Shutter 15 Raw material solution 16 Crucible 17 Supporting table 18 Magnetic Garnet single crystal film 19 Substrate holder 20 Support rod 21 Electromagnet
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鷹木 洋 京都府長岡京市天神二丁目26番10号 株 式会社 村田製作所内 審査官 山田 正文 (56)参考文献 特開 平２−94607（ＪＰ，Ａ) 特開 平５−95205（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01F 10/00 - 10/32 H01F 41/14 - 41/34 H01P 1/20 - 1/219 C30B 29/28 C30B 33/04 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hiroshi Takagi 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Prefecture Examiner, Murata Manufacturing Co., Ltd. Masafumi Yamada (56) References JP-A-2-94607 (JP, A JP-A-5-95205 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01F 10/00-10/32 H01F 41/14-41/34 H01P 1/20-1 / 219 C30B 29/28 C30B 33/04
Claims (5)
ット単結晶膜に、予め直流磁界を加えて磁化処理を行な
うことを特徴とする静磁波素子用磁性ガーネット単結晶
膜の処理方法。1. A method for processing a magnetic garnet single crystal film for a magnetostatic wave device, comprising: applying a direct current magnetic field to the magnetic garnet single crystal film before using it as a magnetostatic wave device.
3-x Ｒ２x Ｆｅ5-yＭy Ｏ12（但し、Ｒ１はＹまたはＴ
ｂのいずれか、Ｒ２はＢｉ，Ｂ，Ｓｂおよびランタン系
遷移元素のうち少なくとも１種類であり、ＭはＧａ，Ａ
ｌ，Ｉｎ，Ｔｌ，ＣｏおよびＮｉのうち少なくとも１種
類、または、ＭはＺｒおよびＳｉのうち少なくとも１種
類とＭｇであり、０≦ｘ＜３，０≦ｙ＜５）で表される
ものであることを特徴とする請求項１記載の静磁波素子
用磁性ガーネット単結晶膜の処理方法。2. The magnetic garnet single crystal film has a general formula R1
3-x R2 x Fe 5-y MyO 12 (where R1 is Y or T
b, R2 is at least one of Bi, B, Sb and a lanthanum-based transition element, and M is Ga, A
At least one of l, In, Tl, Co and Ni, or M is at least one of Zr and Si and Mg, represented by 0 ≦ x <3, 0 ≦ y <5). 2. The method for treating a magnetic garnet single crystal film for a magnetostatic wave device according to claim 1, wherein:
Ｏ12であることを特徴とする請求項１記載の静磁波素子
用磁性ガーネット単結晶膜の処理方法。3. The magnetic garnet single crystal film is made of Y 3 Fe 5
2. The method for treating a magnetic garnet single crystal film for a magnetostatic wave device according to claim 1, wherein O 12 is used.
磁性ガーネット単結晶膜の冷却部に、該磁性ガーネット
単結晶膜を磁化処理する手段が付設されていることを特
徴とする磁性ガーネット単結晶膜の製造装置。4. A magnetic garnet single crystal, wherein a means for magnetizing the magnetic garnet single crystal film is provided in a cooling section of the magnetic garnet single crystal film in the magnetic garnet single crystal film manufacturing apparatus. Film production equipment.
縦型炉芯管構造の液相エピタキシャル成長装置であり、
該縦型炉芯管の磁性ガーネット単結晶膜の冷却部の周囲
に磁化処理手段として電磁石が付設されていることを特
徴とする請求項４記載の磁性ガーネット単結晶膜の製造
装置。5. An apparatus for producing a magnetic garnet single crystal film,
It is a liquid phase epitaxial growth device with a vertical furnace core tube structure,
The apparatus for manufacturing a magnetic garnet single crystal film according to claim 4, wherein an electromagnet is provided as a magnetizing means around the cooling portion of the magnetic garnet single crystal film of the vertical furnace core tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28532094A JP3324304B2 (en) | 1994-11-18 | 1994-11-18 | Method of processing magnetic garnet single crystal film for magnetostatic wave device and apparatus for manufacturing magnetic garnet single crystal film provided with the processing means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28532094A JP3324304B2 (en) | 1994-11-18 | 1994-11-18 | Method of processing magnetic garnet single crystal film for magnetostatic wave device and apparatus for manufacturing magnetic garnet single crystal film provided with the processing means |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08148335A JPH08148335A (en) | 1996-06-07 |
| JP3324304B2 true JP3324304B2 (en) | 2002-09-17 |
Family
ID=17690019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28532094A Expired - Fee Related JP3324304B2 (en) | 1994-11-18 | 1994-11-18 | Method of processing magnetic garnet single crystal film for magnetostatic wave device and apparatus for manufacturing magnetic garnet single crystal film provided with the processing means |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3324304B2 (en) |
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1994
- 1994-11-18 JP JP28532094A patent/JP3324304B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08148335A (en) | 1996-06-07 |
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