JP3306417B2 - Method of manufacturing polyurethane polishing pad for semiconductor polishing - Google Patents
Method of manufacturing polyurethane polishing pad for semiconductor polishingInfo
- Publication number
- JP3306417B2 JP3306417B2 JP2000398150A JP2000398150A JP3306417B2 JP 3306417 B2 JP3306417 B2 JP 3306417B2 JP 2000398150 A JP2000398150 A JP 2000398150A JP 2000398150 A JP2000398150 A JP 2000398150A JP 3306417 B2 JP3306417 B2 JP 3306417B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- mixing
- polishing pad
- isocyanate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Polyurethanes Or Polyureas (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明は、均一に微小体を分
散させた微小体を有するポリウレタン研磨パッドの製造
方法に関する。本発明のポリウレタン研磨パッドは、樹
脂、ガラスやレンズ、水晶、半導体等の製造用シリコ
ン、電子基板、光学基板等を研磨するに好適な研磨材料
として好適に使用可能である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a polyurethane polishing pad having fine particles in which fine particles are uniformly dispersed. The polyurethane polishing pad of the present invention can be suitably used as a polishing material suitable for polishing resin, silicon for production of glass, lenses, quartz, semiconductors, etc., electronic substrates, optical substrates, and the like.
【０００２】[0002]
【従来の技術】従来このようなポリウレタン研磨パッド
を製造する技術としては、微小中空発泡体をポリウレタ
ン樹脂形成原料組成物に分散する方法などが知られてい
る。2. Description of the Related Art Conventionally, as a technique for producing such a polyurethane polishing pad, there is known a method of dispersing a fine hollow foam in a raw material composition for forming a polyurethane resin.
【０００３】この微小体をポリウレタン樹脂形成原料組
成物に分散する方法は、特表平０８−５００６２２号公
報を中心として、多くの特許が出願されている。該公報
によれば、微発泡ポリウレタン樹脂は、複数の柔軟性を
有する空隙スペースを有した高分子微小エレメントを含
浸したポリマーからなっており、高分子微小エレメント
としては、水溶性ポリマー類又はポリウレタンからなっ
ている。A number of patents have been filed for dispersing the microparticles in a raw material composition for forming a polyurethane resin, mainly in Japanese Patent Application Laid-Open No. 08-500622. According to the gazette, the microfoamed polyurethane resin is made of a polymer impregnated with a polymer microelement having a plurality of flexible void spaces, and the polymer microelement is made of a water-soluble polymer or polyurethane. Has become.
【０００４】該公報に因れば、ウレタン系プレポリマー
と活性水素化合物とを混合・硬化させてポリウレタン系
研磨パッドを得る。その際混合液が未だ低粘度である間
に高分子微小エレメントを混合・均一に分散・硬化させ
ているが、このような方法では高分子エレメントを分散
させる時間が短いため激しく攪拌させる必要があり、そ
のため空気が混入して不均一な泡を発生しやすく、また
激しい攪拌による熱及び反応熱の発生のために混合液に
溶存している気体が気化・膨張し、そのためにボイドが
発生して、製造したウレタン硬化物（ブロック）からス
ライスして研磨パッドを得た場合、パッド表面にボイド
が不均一な分布、大きさで現れる。そのため研磨用スラ
リーを使用して半導体等の製造用シリコンなどの研磨を
行った場合、研磨用スラリーがパッド全面に均等に分布
するのではなく該ボイド部分に偏在・凝集しやすくなる
ため、被研磨表面に傷（スクラッチ）が発生しやすくな
ると言った問題が発生していた。According to this publication, a polyurethane-based polishing pad is obtained by mixing and curing a urethane-based prepolymer and an active hydrogen compound. At this time, the polymer microelements are mixed, uniformly dispersed and cured while the mixed liquid is still low in viscosity, but in such a method, it is necessary to vigorously agitate the polymer elements because the dispersion time of the polymer elements is short. Therefore, it is easy for air to mix and generate uneven foam, and the gas dissolved in the mixture evaporates and expands due to the generation of heat and reaction heat due to vigorous stirring, and as a result, voids are generated. When a polishing pad is obtained by slicing from a manufactured urethane cured product (block), voids appear in the pad surface with uneven distribution and size. Therefore, when polishing a silicon or the like for manufacturing a semiconductor or the like using the polishing slurry, the polishing slurry is not uniformly distributed over the entire surface of the pad but tends to be unevenly distributed and aggregated in the void portion. There has been a problem that the surface tends to be scratched.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、パッドのボ
イドの発生を押さえることで、スクラッチ性、研磨特
性、平坦性に優れた研磨用パッドを製造する方法を提供
することを目的としたものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing a polishing pad having excellent scratching properties, polishing characteristics and flatness by suppressing the occurrence of voids in the pad. It is.
【０００６】[0006]
【課題を解決するための手段】本発明者らは、これらの
目的を達成するために鋭意研究した結果、ボイド発生の
少ない半導体研磨用ウレタンパッドの製造方法を見いだ
し、本発明を完成するに至った。Means for Solving the Problems The inventors of the present invention have made intensive studies to achieve these objects, and as a result, have found a method of manufacturing a urethane pad for semiconductor polishing with less generation of voids, and have completed the present invention. Was.
【０００７】請求項１の発明は、イソシアネート末端プ
レポリマーと、微小体と、活性水素化合物とを混合・攪
拌・硬化させて、半導体研磨用ポリウレタン研磨パッド
を製造する方法において、イソシアネート末端プレポリ
マーと、活性水素化合物とを混合する工程より前に、減
圧により脱泡させる工程を含むことを特徴とする半導体
研磨用ポリウレタン研磨パッドを製造する方法を提供す
るものである。According to a first aspect of the present invention, there is provided a method for producing a polyurethane polishing pad for semiconductor polishing by mixing, stirring and curing an isocyanate-terminated prepolymer, a microparticle, and an active hydrogen compound. And a step of defoaming under reduced pressure before the step of mixing with an active hydrogen compound.
【０００８】本発明によれば、イソシアネート末端プレ
ポリマー、活性化水素化合物に含まれていた空気などの
気体、微小体表面に吸着していた空気などの気体、更に
は微小体の混合工程において巻き込まれる空気などの気
体を減圧で脱泡除去することで、製造されたブロックに
はボイド発生が少なくなり、ブロックをスライスするこ
とにより得られた研磨用パッドも表面のボイドが少な
く、従ってそれに起因する被研磨物表面のスクラッチも
少なくなる。なお微小体は、予めイソシアネート末端プ
レポリマー又は活性水素化合物のいずれか又は両方に混
合することが可能であるが、イソシアネート末端プレポ
リマーに予め混合する方が、好ましい。According to the present invention, a gas such as air contained in an isocyanate-terminated prepolymer, an activated hydrogen compound, a gas such as air adsorbed on the surface of a minute body, and a gas involved in a mixing step of a minute body. By removing bubbles such as air under reduced pressure, voids are reduced in the manufactured block, and the polishing pad obtained by slicing the block also has a small number of voids on the surface, and thus is caused by it. Scratch on the surface of the object to be polished is also reduced. The microparticles can be mixed in advance with either or both of the isocyanate-terminated prepolymer and the active hydrogen compound, but it is more preferable to mix the microparticles with the isocyanate-terminated prepolymer in advance.
【０００９】又請求項２の発明では、該微小体を混合す
る前に減圧により脱泡させる工程を含むことを特徴とす
る半導体研磨用ポリウレタン研磨パッドを製造する方法
を提供するものでもある。Further, the invention of claim 2 provides a method for producing a polyurethane polishing pad for semiconductor polishing, which comprises a step of defoaming under reduced pressure before mixing the fine particles.
【００１０】イソシアネート末端プレポリマー、活性化
水素化合物などに含まれる空気などの気体は、各化合物
に溶け込んでいる場合が多く、混合時に巻き込まれる空
気に比較して除去しにくいので、本発明のように該微小
体を混合する前に減圧脱泡により溶存している気体を除
去することは好ましいことである。Gases such as air contained in isocyanate-terminated prepolymers, activated hydrogen compounds and the like are often dissolved in each compound, and are more difficult to remove than air entrained during mixing. It is preferable to remove the dissolved gas by degassing under reduced pressure before mixing the microparticles.
【００１１】更に請求項３の発明では、該微小体を混合
後に減圧により脱泡させる工程を含むことを特徴とする
半導体研磨用ポリウレタン研磨パッドを製造する方法を
提供する。Further, the invention according to claim 3 provides a method for producing a polyurethane polishing pad for semiconductor polishing, which comprises a step of defoaming under reduced pressure after mixing the fine particles.
【００１２】微小体を混合する際には、微小体表面に含
まれる空気等の気体は勿論、混合時巻き込まれる空気な
どによりブロックにボイドが発生しやすくなるので、本
発明により、減圧脱泡して、気体を除去することは好ま
しい。At the time of mixing the fine particles, voids are likely to be generated in the block due to air and the like included in the surface of the fine particles as well as air and the like contained in the surface of the fine particles. Therefore, it is preferable to remove gas.
【００１３】該減圧脱泡は、微小体をイソシアネート末
端プレポリマー又は活性水素化合物のいずれか、又は両
方に混合する前に行うことができるし、又混合後に行う
こともできるが、混合前後の両方において行うことが、
溶存する気体を効果的に除去する事ができるのでより好
ましい。The defoaming under reduced pressure can be carried out before mixing the microparticles with either or both of the isocyanate-terminated prepolymer and the active hydrogen compound, or can be carried out after the mixing. What can be done in
It is more preferable because dissolved gas can be effectively removed.
【００１４】[0014]
【発明の実施の形態】本発明に使用するイソシアネート
末端プレポリマーは、ポリウレタンの分野において公知
のイソシアネート化合物と、ポリオールとを反応させて
得られる末端がイソシアネート基を有する化合物であ
る。イソシアネート化合物としてはジイソシアネート化
合物が、好適である。DETAILED DESCRIPTION OF THE INVENTION The isocyanate-terminated prepolymer used in the present invention is a compound having an isocyanate group at the end obtained by reacting an isocyanate compound known in the field of polyurethane with a polyol. As the isocyanate compound, a diisocyanate compound is preferable.
【００１５】ジイソシアネート化合物としては、２，４
−トリレンジイソシアネートを主として使用するが、こ
れ以外のジイソシアネートを本発明の効果を損なわない
範囲で併用することも可能で、その例としては２，６−
トリレンジイソシアネート、４，４’−ジフェニルメタ
ンジイソシアネート、ナフタレンー１，５−ジイソシア
ネート、トリジンジイソシアネート、パラフェニレンジ
イソシアネート、キシリレンジイソシアネート、イソホ
ロンジイソシアネート、水添化トリレンジイソシアネー
ト、水添化ジフェニルメタンジイソシアネート等の化合
物を挙げることができるが、これに限るものではない。As the diisocyanate compound, 2,4
-Tolylene diisocyanate is mainly used, but other diisocyanates can be used in combination as long as the effects of the present invention are not impaired.
Compounds such as tolylene diisocyanate, 4,4'-diphenylmethane diisocyanate, naphthalene-1,5-diisocyanate, tolidine diisocyanate, paraphenylene diisocyanate, xylylene diisocyanate, isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated diphenylmethane diisocyanate, and the like. But it is not limited to this.
【００１６】ポリオールとしては、例えばポリ（オキシ
テトラメチレン）グリコール、ポリ（オキシプロピレ
ン）グリコール等のポリエーテルポリオール、ポリカー
ボネートポリオール、ポリエステルポリオール等が利用
できる。As the polyol, for example, polyether polyols such as poly (oxytetramethylene) glycol and poly (oxypropylene) glycol, polycarbonate polyols, polyester polyols and the like can be used.
【００１７】また物性を改良するために、短鎖グリコー
ル、例えばエチレングリコール、１，２−プロピレング
リコール、１，３−プロピレングリコール、１，２−ブ
タンジオール、１，３−ブタンジオール、２−メチル−
１，３−プロパンジオール、１，４−ブタンジオール、
ネオペンチルグリコール、１，５−ペンタンジオール、
３−メチル−１，５−ペンタンジオール、１，６−ヘキ
サンジオール、ジエチレングリコール、ジプロピレング
リコールなどの鎖延長剤を適宜入れることが出来る。In order to improve physical properties, short-chain glycols such as ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 2-methyl −
1,3-propanediol, 1,4-butanediol,
Neopentyl glycol, 1,5-pentanediol,
A chain extender such as 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol can be appropriately added.
【００１８】活性水素含有化合物としては、例えば３，
３’−ジクロロ−４，４’−ジアミノジフェニルメタ
ン、クロロアニリン変性ジクロロジアミノジフェニルメ
タン、３，５−ビス（メチルチオ）−２，４−トルエン
ジアミン、３，５−ビス（メチルチオ）−２，６−トル
エンジアミン等のジアミン類のうち少なくとも１つを主
に使用する。これらジアミン類は、イソシアネート末端
プレポリマーの架橋剤として働く。これらジアミン類
は、単独でも使用可能であるが、必要に応じてポリ（オ
キシテトラメチレン）グリコール、ポリ（オキシプロピ
レン）グリコール等のポリエーテルポリオール、ポリカ
ーボネートポリオール、ポリエステルポリオール等と併
用することも可能である。アミンと併用するポリオール
の分子量は低分子量のものが適しており、特に分子量５
００〜１０００の範囲にあるポリ（オキシテトラメチレ
ン）グリコールが好ましい。Examples of the active hydrogen-containing compound include, for example, 3,
3'-dichloro-4,4'-diaminodiphenylmethane, chloroaniline-modified dichlorodiaminodiphenylmethane, 3,5-bis (methylthio) -2,4-toluenediamine, 3,5-bis (methylthio) -2,6-toluene At least one of diamines such as diamine is mainly used. These diamines act as crosslinking agents for the isocyanate-terminated prepolymer. These diamines can be used alone, but if necessary, can be used in combination with polyether polyols such as poly (oxytetramethylene) glycol and poly (oxypropylene) glycol, polycarbonate polyols, polyester polyols and the like. is there. The polyol used in combination with the amine preferably has a low molecular weight, particularly
Poly (oxytetramethylene) glycols in the range from 00 to 1000 are preferred.
【００１９】本発明に用いられる微小体は、内部に中空
部があり、その中に低沸点炭化水素を内包し、殻部分は
軟化温度が内包した低沸点炭化水素の沸点よりも高温で
ある熱塑性樹脂からなっており、熱可塑性樹脂製の軟化
温度以上の温度が加えられると、熱可塑性樹脂の軟化及
び低沸点炭化水素の体積膨張が同時に起こり、微小体が
膨張する性質を有するものが好ましい。その軟化温度
は、好ましくは９０〜１２０℃の範囲である。The microparticles used in the present invention have a hollow portion inside which contains a low-boiling hydrocarbon, and a shell portion whose thermoplasticity is higher than the boiling point of the included low-boiling hydrocarbon. It is preferably made of a resin, and when a temperature equal to or higher than the softening temperature of the thermoplastic resin is applied, softening of the thermoplastic resin and volume expansion of the low-boiling hydrocarbon occur at the same time, so that the microparticles are preferably expanded. Its softening temperature is preferably in the range from 90 to 120C.
【００２０】微小体の粒径は、好ましくは５〜３０μｍ
である。この微小体は２液反応硬化の際に発泡するが、
発泡後は、好ましくは粒径１０〜１００μｍの範囲で成
形物中に微小泡として存在する。The particle size of the fine particles is preferably 5 to 30 μm.
It is. These microbubbles foam during two-component reaction curing,
After foaming, it is preferably present as microbubbles in the molded product in a particle size range of 10 to 100 μm.
【００２１】又、微小体の真比重は、好ましくは１．０
〜１．３であり、この範囲を取ることはイソシアネート
末端プレポリマーの比重に近いため、混合時の分離が起
こりにくく、良好な分散状態を維持できる。Further, the true specific gravity of the microparticles is preferably 1.0
Since it is close to the specific gravity of the isocyanate-terminated prepolymer, separation during mixing hardly occurs, and a good dispersion state can be maintained.
【００２２】微小体の殻部を構成する熱可塑性樹脂は、
アクリロニトリル-塩化ビニリデン共重合体またはアク
リロニトリル-メチルメタクリレート共重合体などが使
用可能である。また、該微小体の中空部に存する低沸点
炭化水素としては、例えば、イソブタン、ペンタン、イ
ソペンタン、石油エーテル等が挙げられる。この微小体
は、主に、イソシアネート末端プレポリマーと活性水素
含有化合物とを混合・攪拌させ、反応硬化する際に放出
される反応熱によって発泡するものである。The thermoplastic resin constituting the shell of the minute body is:
An acrylonitrile-vinylidene chloride copolymer or an acrylonitrile-methyl methacrylate copolymer can be used. Examples of the low-boiling hydrocarbon present in the hollow portion of the microparticle include, for example, isobutane, pentane, isopentane, petroleum ether and the like. These fine particles are mainly foamed by the reaction heat released when the isocyanate-terminated prepolymer and the active hydrogen-containing compound are mixed and stirred, and the reaction is cured.
【００２３】混合に際しては、先ず減圧可能なブレンド
タンクにイソシアネート末端プレポリマーを投入し、４
０〜８０℃、好ましくは６０〜８０℃に加温し、微小体
を混合・攪拌する。混合後、溶存した空気などの気体
や、混合時に取り込まれた空気などを１０Ｔｏｒｒ程度
までの減圧により脱泡して取り除く。その際、予め決め
られた高さ以上に液が上昇したら常圧に戻し、再度減圧
を繰り返して、液が上昇しなくなるまで繰り返す。At the time of mixing, first, an isocyanate-terminated prepolymer is charged into a blend tank capable of reducing pressure, and
The mixture is heated to 0 to 80 ° C, preferably 60 to 80 ° C, and the fine particles are mixed and stirred. After mixing, gas such as dissolved air and air taken in during mixing are removed by defoaming by reducing the pressure to about 10 Torr. At this time, if the liquid rises above a predetermined height, the pressure is returned to normal pressure, the pressure is reduced again, and the process is repeated until the liquid no longer rises.
【００２４】微小体を混合した後に減圧操作を繰り返す
ことで、巻き込まれたり、溶存したりしていた空気など
の気体を充分に除くことは可能であるが、イソシアネー
ト末端プレポリマーに溶存している気体を除くには時間
がかかるため、微小体を混合する前に、同様の減圧操作
により気体を除いておくことが、より好ましい。By repeating the reduced pressure operation after mixing the microparticles, it is possible to sufficiently remove the gas such as air which has been caught or dissolved, but it is dissolved in the isocyanate-terminated prepolymer. Since it takes time to remove the gas, it is more preferable to remove the gas by a similar depressurizing operation before mixing the fine particles.
【００２５】又、減圧脱泡時、減圧操作中攪拌できるよ
うな構造を持つブレンドタンクを使用すると、微小体が
比重差により分離しにくく、より好ましい。It is more preferable to use a blend tank having a structure that enables stirring during the decompression operation during defoaming under reduced pressure, because the minute particles are less likely to be separated due to a difference in specific gravity.
【００２６】又微小体を予め発泡させたものを使用する
こともできるが、この場合は、比重が軽いため、減圧に
より分離する傾向がある。その場合は、プレポリマーの
温度を６０〜７０℃と低めに設定することで粘度を予め
高めに設定しておき、更に減圧を攪拌しながら行った方
が、より均一なポリウレタン発泡体が得られる。It is also possible to use fine particles which have been foamed in advance, but in this case, since the specific gravity is light, there is a tendency that the fine particles are separated by reduced pressure. In that case, setting the temperature of the prepolymer to a low temperature of 60 to 70 ° C. to set the viscosity higher in advance, and further performing the stirring while further reducing the pressure can obtain a more uniform polyurethane foam. .
【００２７】微小体を混合させる攪拌機としては通常の
デイゾルバーがあり、例えば粉体混合用ミキサー、プラ
イマリーミキサーを使用する。As a stirrer for mixing the fine particles, there is an ordinary dissolver, for example, a mixer for mixing powder or a primary mixer.
【００２８】又ブレンドタンクとしては、１０ｔｏｒｒ
程度の減圧が可能であり、且つ減圧中において攪拌可能
な構造を持つものが好ましい。更に、液面計がついてお
り、減圧による液面のモニターが出来るものが好まし
い。又、ブレンドタンクの投入穴に、減圧に耐えるガラ
ス製、又は透明硬質プラスチック製の監視窓を設置し
て、これにより液面の状態を目視監視しても良い。As a blend tank, 10 torr
It is preferable that the pressure can be reduced to a certain degree and the structure has a structure capable of stirring under reduced pressure. Further, it is preferable that a liquid level gauge is provided so that the liquid level can be monitored by reducing the pressure. In addition, a monitoring window made of glass or transparent hard plastic that can withstand reduced pressure may be provided in the charging hole of the blend tank, and the state of the liquid level may be visually monitored.
【００２９】脱泡が終わったプレポリマーと微小体との
混合物を反応タンクに計量し、そこに活性水素化合物を
混合・攪拌させ、型に注入し、反応硬化させて半導体研
磨用ポリウレタン研磨パッドを得る。ここにおける攪拌
は、大きな気泡を巻き込まない攪拌機の使用が好まし
い。このような攪拌機としては、プライマリーミキサー
が好適である。又活性水素化合物との混合は、２液成分
系発泡機で行っても良い。The mixture of the depolymerized prepolymer and the fine particles is measured in a reaction tank, and an active hydrogen compound is mixed and stirred in the reaction tank, poured into a mold, and cured by reaction to form a polyurethane polishing pad for polishing semiconductors. obtain. For the stirring, it is preferable to use a stirrer that does not involve large bubbles. As such a stirrer, a primary mixer is suitable. The mixing with the active hydrogen compound may be performed by a two-component foaming machine.
【００３０】[0030]
【実施例】以下実施例により本発明をより具体的に説明
するが、本発明は実施例により何ら限定されるものでは
ない。EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the present invention is limited thereto.
【００３１】（実施例１）７０℃に加温したイソシアネ
ート末端プレポリマーＬ−３２５（ユニロイヤル社製Ｎ
ＣＯ９．４５％）２００ｋｇ重量部を減圧タンクに計量
し、７０℃に保ちながら、１０Ｔｏｒｒ程度までの減圧
により、プレポリマーに溶存している気体を脱泡させ
る。この際ガラス製の監視窓から目視にて監視をし、決
められた線まで上昇したら常圧に戻し、再度減圧を繰り
返して、液が上昇しなくなるまで繰り返す。その後エキ
スパンセル ５５１ＤＥ（日本フィライト社製 既発
泡）６.４ｋｇを、プライマリーミキサーにて混合した
ものを、同様な方法により減圧脱泡させる。この微小体
が混合された液を反応容器に３０ｋｇ計量し、更に、１
２０℃で融解させた３，３’−ジクロロ−４，４’−ジ
アミノジフェニルメタンを７．６ｋｇ投入し、プライマ
リーミキサーにて７０秒間、攪拌・混合し、型に流し込
み、成型体を得た。(Example 1) Isocyanate-terminated prepolymer L-325 (N manufactured by Uniroyal Co.)
200 kg parts by weight of CO (9.45%) is weighed in a reduced pressure tank, and while maintaining the temperature at 70 ° C., the gas dissolved in the prepolymer is degassed by reducing the pressure to about 10 Torr. At this time, monitoring is performed visually through a glass monitoring window, and when the pressure rises to a predetermined line, the pressure is returned to normal pressure, pressure reduction is repeated again, and the process is repeated until the liquid does not rise. Thereafter, 6.4 kg of Expancel 551DE (produced by Nippon Philite Co., Ltd.) was mixed with a primary mixer, and the mixture was degassed under reduced pressure by the same method. 30 kg of the liquid mixed with the fine particles is weighed into a reaction vessel, and
7.6 kg of 3,3′-dichloro-4,4′-diaminodiphenylmethane melted at 20 ° C. was charged, stirred and mixed with a primary mixer for 70 seconds, and poured into a mold to obtain a molded body.
【００３２】（比較例１）実施例１において減圧工程を
除いたほかは同様にして、成型体を得た。Comparative Example 1 A molded product was obtained in the same manner as in Example 1 except that the pressure reduction step was omitted.
【００３３】各得られた成型体を１．３ｍｍにスライス
して得られた１５枚のシートについて、その切断面を目
視観察したところ、実施例１においてはいずれのシート
も、０．５mmφ以上のボイドが２０個以下／６００ｍｍ
φ成型体に対し、比較例１においては３０個以上／６０
０ｍｍφであった。The cut surfaces of 15 sheets obtained by slicing each of the obtained molded bodies into 1.3 mm were visually observed. In Example 1, all the sheets had a diameter of 0.5 mmφ or more. 20 voids or less / 600mm
In comparison with the φ molded body, in Comparative Example 1, 30 or more pieces / 60
It was 0 mmφ.
【００３４】また、それらを用いて、８インチシリコン
ウエハの研磨試験（ウエハ荷重３００ｇ／ｃｍ2、プラ
テン回転数６０ｒｐｍ、研磨時間１２０秒）を行った。
得られたシリコンウエハの被研磨表面を、トプコン社製
表面欠陥装置、ＷＭ２５００にて０．２μｍ以上の異物
の検出を行ない、線状に検出される物に関してスクラッ
チとして評価したところ、実施例１においては、スクラ
ッチの数としては、10個以下であった。又研磨特性、平
坦性は、いずれも良好であった。一方、比較例において
は、スクラッチ性は、１００個以上のものがあり、実用
上問題のあるものであった。Using these, an 8-inch silicon wafer was subjected to a polishing test (wafer load: 300 g / cm 2 , platen rotation speed: 60 rpm, polishing time: 120 seconds).
The surface to be polished of the obtained silicon wafer was subjected to detection of a foreign substance having a size of 0.2 μm or more by using a surface defect device WM2500 manufactured by Topcon Corporation, and a linearly detected object was evaluated as a scratch. Had less than 10 scratches. The polishing characteristics and flatness were all good. On the other hand, in the comparative examples, the scratchability was 100 or more, which was problematic in practical use.
【００３５】[0035]
【発明の効果】イソシアネート末端プレポリマーと微小
体及び活性水素含有化合物を混合・攪拌・硬化させ半導
体研磨用ポリウレタン研磨パッドを製造するに際し、微
小体をイソシアネート末端プレポリマー又は活性水素化
合物のいずれか、又は両方に混合する前又は後、又は両
方に減圧脱泡工程を入れることで、ボイドの発生を押さ
えることができ、スクラッチ性、研磨特性、平坦性に優
れた研磨用パッドを得ることが出来た。According to the present invention, in producing a polyurethane polishing pad for semiconductor polishing by mixing, stirring, and curing an isocyanate-terminated prepolymer, a microparticle, and an active hydrogen-containing compound, the microparticle is treated with either an isocyanate-terminated prepolymer or an active hydrogen compound, By adding a vacuum degassing step before or after mixing with both or both, it was possible to suppress the generation of voids, and it was possible to obtain a polishing pad excellent in scratch property, polishing characteristics, and flatness. .
───────────────────────────────────────────────────── フロントページの続き (72)発明者 下村 哲生 滋賀県大津市堅田二丁目１番１号 東洋 紡績株式会社 総合研究所内 (72)発明者 中森 雅彦 滋賀県大津市堅田二丁目１番１号 東洋 紡績株式会社 総合研究所内 審査官 佐藤 健史 (56)参考文献 特開 平11−322877（ＪＰ，Ａ) 特開2000−343412（ＪＰ，Ａ) 特開2000−344902（ＪＰ，Ａ) 特表 平８−500622（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C08G 18/00 - 18/87 B24B 37/00 C08J 5/14 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tetsuo Shimomura 2-1-1 Katata, Otsu-shi, Shiga Prefecture Toyo Spinning Co., Ltd. (72) Inventor Masahiko Nakamori 2-1-1 Katata, Otsu-shi, Shiga Prefecture Takeshi Sato, Examiner, Research Laboratory, Toyobo Co., Ltd. (56) References JP-A-11-322877 (JP, A) JP-A-2000-343412 (JP, A) JP-A-2000-344902 (JP, A) 8-500622 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) C08G 18/00-18/87 B24B 37/00 C08J 5/14
Claims (3)
体と、活性水素化合物とを混合・攪拌・硬化させて、半
導体研磨用ポリウレタン研磨パッドを製造する方法にお
いて、イソシアネート末端プレポリマーと、活性水素化
合物とを混合する工程より前に、減圧により脱泡させる
工程を含むことを特徴とする半導体研磨用ポリウレタン
研磨パッドを製造する方法。1. A method for producing a polyurethane polishing pad for semiconductor polishing by mixing, stirring and curing an isocyanate-terminated prepolymer, a microparticle, and an active hydrogen compound. A method of producing a polyurethane polishing pad for semiconductor polishing, comprising a step of defoaming under reduced pressure prior to the step of mixing.
せる工程を含むことを特徴とする請求項１に記載の半導
体研磨用ポリウレタン研磨パッドを製造する方法。2. The method for producing a polyurethane polishing pad for semiconductor polishing according to claim 1, further comprising the step of defoaming under reduced pressure before mixing said microscopic objects.
工程を含むことを特徴とする請求項１又は２に記載の半
導体研磨用ポリウレタン研磨パッドを製造する方法。3. The method for producing a polyurethane polishing pad for semiconductor polishing according to claim 1, further comprising a step of defoaming the fine particles under reduced pressure after mixing.
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|---|---|---|---|
| JP2000398150A JP3306417B2 (en) | 2000-12-27 | 2000-12-27 | Method of manufacturing polyurethane polishing pad for semiconductor polishing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000398150A JP3306417B2 (en) | 2000-12-27 | 2000-12-27 | Method of manufacturing polyurethane polishing pad for semiconductor polishing |
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| JP3306417B2 true JP3306417B2 (en) | 2002-07-24 |
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Families Citing this family (5)
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| AU2003302299A1 (en) | 2002-11-27 | 2004-06-18 | Toyo Boseki Kabushiki Kaisha | Polishing pad and method for manufacturing semiconductor device |
| US20050171224A1 (en) * | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
| JP2006022139A (en) * | 2004-07-06 | 2006-01-26 | Takao Kawai | Foamed polyurethane having microcavities and its manufacturing method |
| WO2010038725A1 (en) * | 2008-09-30 | 2010-04-08 | Dic株式会社 | Urethane resin composition for polishing pad, polyurethane polishing pad, and method for producing polyurethane polishing pad |
| TWI461450B (en) * | 2008-09-30 | 2014-11-21 | Dainippon Ink & Chemicals | Two-package curing type polyurethane resin composition and methods for making urethane molded products for polishing pads |
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