JP3301912B2 - Transmission line connection structure - Google Patents
Transmission line connection structureInfo
- Publication number
- JP3301912B2 JP3301912B2 JP06999896A JP6999896A JP3301912B2 JP 3301912 B2 JP3301912 B2 JP 3301912B2 JP 06999896 A JP06999896 A JP 06999896A JP 6999896 A JP6999896 A JP 6999896A JP 3301912 B2 JP3301912 B2 JP 3301912B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- connection
- transmission
- signal
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マイクロ波等の高
周波電気信号の伝送線路における単層線路と多層線路と
の接続構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection structure between a single-layer line and a multilayer line in a transmission line for high-frequency electric signals such as microwaves.
【０００２】[0002]
【従来の技術】高周波半導体素子の収納に用いられる高
周波パッケージにおける高周波電気信号の入出力部など
においては、高周波電気信号の伝送線路であるマイクロ
ストリップ線路（単層線路）とストリップ線路（多層線
路）とを接続するために、マイクロストリップ線路から
ストリップ線路へ、あるいはその逆へ変換して接続する
構造が必要である。2. Description of the Related Art In an input / output section of a high-frequency electric signal in a high-frequency package used for accommodating a high-frequency semiconductor element, a microstrip line (single-layer line) and a strip line (multi-layer line), which are transmission lines for a high-frequency electric signal, are provided. In order to connect the microstrip line to the strip line, a structure for converting and connecting the microstrip line to the strip line or vice versa is required.
【０００３】このようなマイクロストリップ線路とスト
リップ線路との接続構造としては、マイクロストリップ
線路の接地導体が信号線に対して誘電体を介して対向す
る単一面を成しているのに対し、ストリップ線路の接地
導体が信号線に対して誘電体を介して上下で対向して信
号線を挟み込むような２つの面を成しているため、マイ
クロストリップ線路の単一面の接地導体とストリップ線
路の２つの接地導体のうちの一方とを同一平面で接続
し、ストリップ線路の他方の接地導体は、例えば一方の
接地導体との間に誘電体を貫通するように形成した貫通
穴の内面に金属等の導体を被着させたスルーホール、あ
るいは貫通孔の内部に金属等の導体が充填されたビアホ
ール等を介して電気的に接続される。In such a connection structure between a microstrip line and a strip line, a ground conductor of the microstrip line forms a single surface opposed to a signal line via a dielectric, whereas Since the ground conductor of the line has two surfaces that vertically oppose the signal line via a dielectric and sandwiches the signal line, the ground conductor of the single surface of the microstrip line and the ground conductor of the strip line are formed. One of the two ground conductors is connected on the same plane, and the other ground conductor of the strip line is formed, for example, of metal or the like on the inner surface of a through hole formed so as to penetrate the dielectric between itself and one ground conductor. It is electrically connected through a through hole on which a conductor is attached, a via hole in which a conductor such as metal is filled in the through hole, or the like.
【０００４】従来、このようなビアホールは、ストリッ
プ線路の信号線の両側に信号の伝送方向に対して平行な
方向に周期的に多数配置して設けられていた。Conventionally, a large number of such via holes are periodically arranged on both sides of a signal line of a strip line in a direction parallel to a signal transmission direction.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、多数の
ビアホール等を信号の伝送方向に対して平行な方向に周
期的に配置した場合、それらビアホール等の配置周期が
信号線を伝送される高周波電気信号の周波数に対して半
波長の整数倍となるときには、ストリップ線路において
ビアホール間の他方の接地導体の電位が定在し、入射波
がこの定在波のために伝搬が妨げられることによって共
振が生じて伝送不良が発生するという問題点があった。However, when a large number of via holes and the like are periodically arranged in a direction parallel to the signal transmission direction, the arrangement period of the via holes and the like is such that the arrangement period of the via holes and the like is such that a high-frequency electric signal transmitted through a signal line is transmitted. When the frequency becomes an integral multiple of a half wavelength with respect to the frequency of the line, the potential of the other ground conductor between the via holes in the strip line is stationary and the incident wave is prevented from propagating due to the standing wave, so that resonance occurs. Transmission failure occurs.
【０００６】また、ストリップ線路の高周波電気信号に
対する伝搬定数が、マイクロストリップ線路における伝
搬とは異なり、ビアホール等の配置の周期に応じて周期
的に変化することとなり、電気長や寄生特性が設計仕様
と合致しなくなって所望の特性が得られなくなるという
問題点もあった。Also, the propagation constant of a strip line for a high-frequency electric signal is different from that of a microstrip line, and changes periodically according to the arrangement period of via holes and the like. And the desired characteristics cannot be obtained.
【０００７】さらに、多数のビアホールを信号の伝送方
向に対して平行な方向に周期的に配置するにはそれらの
ビアホールを精度良く形成する必要があり、また、製造
工程において多数のビアホールを形成することは工数・
時間・コストの面からも好ましくないという問題点もあ
った。Furthermore, in order to periodically arrange a large number of via holes in a direction parallel to the signal transmission direction, it is necessary to form the via holes with high precision, and to form a large number of via holes in a manufacturing process. That means man-hours
There is also a problem that it is not preferable in terms of time and cost.
【０００８】本発明者は、上記事情に鑑みて鋭意研究に
努めた結果、マイクロストリップ線路とストリップ線路
とを接続した伝送線路の接続構造において、ストリップ
線路の２つの接地導体の接続箇所を大幅に低減しつつ上
記のような共振による高周波電気信号の伝送不良をなく
すことができる構造を見いだした。The inventor of the present invention has made intensive studies in view of the above circumstances, and as a result, in a connection structure of a transmission line connecting a microstrip line and a strip line, a connection point between two ground conductors of the strip line has been greatly increased. The present inventors have found a structure capable of eliminating the transmission failure of a high-frequency electric signal due to the resonance as described above while reducing the frequency.
【０００９】本発明は上記知見に基づいて完成されたも
のであり、その目的は、ストリップ線路の２つの接地導
体の接続箇所、すなわちビアホール等の形成数を大幅に
低減することができるとともに、高周波電気信号のビア
ピッチでの定在波による共振の発生を防止して共振によ
る伝送不良を防止し、伝搬定数の周期的な変化をなくし
て良好な伝送特性が得られる伝送線路接続構造を提供す
ることにある。The present invention has been completed on the basis of the above knowledge, and an object of the present invention is to significantly reduce the number of connection points between two ground conductors of a strip line, that is, the number of via holes and the like, and to realize a high frequency To provide a transmission line connection structure capable of preventing occurrence of resonance due to a standing wave at a via pitch of an electric signal, preventing transmission failure due to resonance, and eliminating a periodic change in a propagation constant and obtaining good transmission characteristics. It is in.
【００１０】[0010]
【課題を解決するための手段】本発明の伝送線路接続構
造は、マイクロストリップ線路の信号線とストリップ線
路の信号線とを接続して成る伝送線路接続構造であっ
て、前記マイクロストリップ線路の接地導体を前記スト
リップ線路の一方の接地導体に接続させるとともに、前
記ストリップ線路の他方の接地導体と前記一方の接地導
体とを、前記マイクロストリップ線路の信号線と前記ス
トリップ線路の信号線との接続部の両側で信号の伝送方
向に対して垂直な方向に配設した少なくとも各１個の接
続導体を介して接続して成り、前記接続部の両側に最も
近接した２つの前記接続導体の間隔を前記ストリップ線
路の信号線の幅の２倍以上とし、かつこれら２つの前記
接続導体と前記ストリップ線路の端部との距離を前記接
続導体の厚みの２倍以内としたことを特徴とするもので
ある。A transmission line connection structure according to the present invention is a transmission line connection structure formed by connecting a signal line of a microstrip line and a signal line of a strip line. A conductor is connected to one ground conductor of the strip line, and the other ground conductor and the one ground conductor of the strip line are connected to a signal line of the microstrip line and a signal line of the strip line. Are connected via at least one connection conductor arranged in a direction perpendicular to the signal transmission direction on both sides of the connection portion, and the distance between the two connection conductors closest to both sides of the connection portion is At least twice the width of the signal line of the strip line, and the distance between these two connection conductors and the end of the strip line is twice the thickness of the connection conductor. It is characterized in that it has an inner.
【００１１】また、本発明の伝送線路接続構造は、上記
構成の接続構造において前記接続導体のうち前記信号線
の接続部の両側に最も近接した２つの接続導体の長さ
と、その２つの接続導体の間隔との和を、伝送される信
号のうち最高周波数の信号の波長の２分の１以下に設定
したことを特徴とするものである。Further, in the transmission line connection structure of the present invention, the length of two connection conductors closest to both sides of the connection portion of the signal line among the connection conductors in the connection structure having the above structure, and the two connection conductors Is set to be equal to or less than one half of the wavelength of the highest frequency signal among the transmitted signals.
【００１２】本発明の伝送線路接続構造によれば、マイ
クロストリップ線路の信号線とストリップ線路の信号線
との接続部において、接続部の両側でそれぞれ信号の伝
送方向に対して垂直な方向に配設した少なくとも各１個
のビアホール等の接続導体を介してストリップ線路の他
方の接地導体と一方の接地導体とを接続し、接続部の両
側に最も近接した２つの接続導体の間隔をストリップ線
路の信号線の幅の２倍以上とし、かつこれら２つの接続
導体とストリップ線路の端部との距離を接続導体の厚み
の２倍以内としたことから、ストリップ線路の高周波電
気信号に対する伝搬定数がビアホール等の配置の周期に
応じて周期的に変化することがなくなり、また、伝送さ
れる高周波信号のビアピッチでの定在波による共振が発
生しなくなるので、ストリップ線路の内部における伝送
モードが理想的な伝送モードに近づいて伝送不良をなく
すことができ、設計仕様に合致した所望通りの良好な伝
送特性を得ることができるものとなる。According to the transmission line connection structure of the present invention, at the connection between the signal line of the microstrip line and the signal line of the strip line, both sides of the connection are arranged in a direction perpendicular to the signal transmission direction. The other ground conductor and one ground conductor of the strip line are connected via at least one connection conductor such as a via hole, respectively, and the distance between the two connection conductors closest to both sides of the connection portion is determined by the distance of the strip line. Since the width of the signal line is twice or more and the distance between these two connection conductors and the end of the strip line is within twice the thickness of the connection conductor, the propagation constant of the strip line with respect to the high-frequency electric signal is reduced to the via hole. Since no longer changes periodically in accordance with the cycle of the arrangement, etc., and resonance due to the standing wave at the via pitch of the transmitted high-frequency signal does not occur. Transmission mode in the interior of the strip line can be eliminated transmission failure approaching ideal transmission mode, and which can obtain good transmission characteristics as desired matching the design specifications.
【００１３】また、ストリップ線路の一方の接地導体と
共有されたマイクロストリップ線路の接地導体は最も接
地状態が安定しているが、接続導体のうち信号線の接続
部の両側に最も近接した２つの接続導体の長さと、その
間の他方の接地導体の間隔との３辺の接地状態は電位変
化が生じやすく、それらの長さと間隔との和が信号の波
長の２分の１程度になる場合には他方の接地導体の信号
線上方に相当する部分が最も電位が高くなって特性イン
ピーダンスのずれが最も大きくなる。これに対し、前記
和が信号の波長の２分の１よりも短かければ共振は生じ
ないことから、本発明の伝送線路接続構造によれば、信
号の伝送方向に対して垂直な方向での共振も生じなくな
るため、接続部からストリップ線路における伝送特性の
悪化を抑制することができ、さらに優れた伝送特性を得
ることができるものとなる。The ground conductor of the microstrip line shared with one of the ground conductors of the strip line has the most stable grounding state, but two of the connection conductors which are closest to both sides of the connection portion of the signal line. The grounding state on three sides, that is, the length of the connection conductor and the distance between the other grounding conductors in between, is likely to cause a potential change. When the sum of the length and the distance becomes about half the wavelength of the signal, The potential of the portion corresponding to the other ground conductor above the signal line has the highest potential, and the characteristic impedance has the largest deviation. On the other hand, if the sum is shorter than one half of the wavelength of the signal, no resonance occurs. Therefore, according to the transmission line connection structure of the present invention, the transmission line in the direction perpendicular to the transmission direction of the signal. Since resonance does not occur, deterioration of the transmission characteristics in the strip line from the connection portion can be suppressed, and further excellent transmission characteristics can be obtained.
【００１４】さらに、本発明の伝送線路接続構造によれ
ば、ストリップ線路の２つの接地導体を接続するための
ビアホール等の接続導体を接続部の両側に配置するだけ
で所望の伝送特性が得られるため、それら接続導体の使
用を従来と比較して大幅に低減することができ、製造工
程における工数・時間・コストを大幅に削減できるもの
となる。Further, according to the transmission line connection structure of the present invention, desired transmission characteristics can be obtained only by arranging connection conductors such as via holes for connecting two ground conductors of the strip line on both sides of the connection portion. Therefore, the use of these connection conductors can be greatly reduced as compared with the conventional case, and the number of steps, time and cost in the manufacturing process can be greatly reduced.
【００１５】[0015]
【発明の実施の形態】以下、図面に基づいて本発明を詳
細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings.
【００１６】図１は本発明の伝送線路接続構造の一実施
例を示す斜視図であり、同図においては中央のストリッ
プ線路の両側にそれぞれ同じ伝送線路接続構造によりマ
イクロストリップ線路を接続した例を示している。ま
た、図２はその信号線と同一平面を示す横断面図、図３
は図１ならびに図２のＡ−Ａ線断面図である。FIG. 1 is a perspective view showing one embodiment of a transmission line connection structure of the present invention. In FIG. 1, an example in which microstrip lines are connected to both sides of a center strip line by the same transmission line connection structure is shown. Is shown. FIG. 2 is a cross-sectional view showing the same plane as the signal line, and FIG.
FIG. 3 is a sectional view taken along line AA of FIGS. 1 and 2.
【００１７】図１〜図３において、１はマイクロストリ
ップ線路であり、誘電体２と、その上面に形成された信
号線３と、その下面に形成された接地導体４とから成
る。５はストリップ線路であり、誘電体２と同様の誘電
体６と、その内部に形成された信号線７と、誘電体６の
下面に形成された一方の接地導体８と、誘電体６の上面
に形成された信号線９とから成り、一方の接地導体８は
マイクロストリップ線路１の接地導体４と同一面上で接
続されている。また、10はマイクロストリップ線路１の
信号線３とストリップ線路５の信号線７との接続部であ
り、この接続部10はストリップ線路５の端部の誘電体６
内部に、マイクロストリップ線路１の信号線３とストリ
ップ線路５の信号線７とのインピーダンス整合のため
に、信号線３からそれより幅の狭い信号線７に向かって
テーパー形状に形成される。そして、11は接続導体であ
り、接続部10の両側で信号の伝送方向に対して垂直な方
向に少なくとも各１個配設されるが、本例では接続部10
の両側にそれぞれ３つずつのビアホールを形成した例を
示している。これら接続導体11によりストリップ線路５
の一方の接地導体８と他方の接地導体９とが電気的に接
続され、他方の接地導体９が接地される。1 to 3, reference numeral 1 denotes a microstrip line, which comprises a dielectric 2, a signal line 3 formed on an upper surface thereof, and a ground conductor 4 formed on a lower surface thereof. Reference numeral 5 denotes a strip line, which is a dielectric 6 similar to the dielectric 2, a signal line 7 formed therein, one ground conductor 8 formed on the lower surface of the dielectric 6, and an upper surface of the dielectric 6. , And one ground conductor 8 is connected on the same plane as the ground conductor 4 of the microstrip line 1. Reference numeral 10 denotes a connecting portion between the signal line 3 of the microstrip line 1 and the signal line 7 of the strip line 5, and this connecting portion 10 is a dielectric 6 at the end of the strip line 5.
Inside, the signal line 3 of the microstrip line 1 and the signal line 7 of the strip line 5 are formed in a tapered shape from the signal line 3 toward the narrower signal line 7 for impedance matching. Reference numeral 11 denotes a connection conductor, and at least one connection conductor 11 is provided on both sides of the connection portion 10 in a direction perpendicular to the signal transmission direction.
3 shows an example in which three via holes are formed on both sides. The strip conductor 5 is formed by these connection conductors 11.
One ground conductor 8 and the other ground conductor 9 are electrically connected, and the other ground conductor 9 is grounded.
【００１８】誘電体２および誘電体６としては、例えば
アルミナ（Ａｌ2Ｏ3）等のセラミックスやいわゆるガラ
セラ（glass−Ａｌ2Ｏ3）、あるいはポリテトラフルオ
ロエチレン（ＰＴＦＥ）・ガラスエポキシ・ポリイミド
等の樹脂系材料などが用いられる。誘電体２および誘電
体６の厚みや幅は、伝送される高周波電気信号の周波数
や特性インピーダンスなどにより適宜設定される。As the dielectric 2 and the dielectric 6, for example, ceramics such as alumina (Al 2 O 3 ), so-called glassella (glass-Al 2 O 3 ), polytetrafluoroethylene (PTFE), glass epoxy, polyimide, etc. Is used. The thickness and width of the dielectric 2 and the dielectric 6 are appropriately set according to the frequency and characteristic impedance of the transmitted high-frequency electric signal.
【００１９】マイクロストリップ線路１の信号線３は、
ＣｕやＭｏＭｎ＋Ｃｕ・Ｗ＋Ａｕなどを用いて厚膜印刷
あるいは薄膜形成手段・メッキ処理などの方法により形
成され、その厚みや幅は、例えばマイクロストリップ線
路で比誘電率が９程度のセラミック基板を用いて特性イ
ンピーダンスを50Ωに設計する場合、厚みと幅は同程度
にされる。The signal line 3 of the microstrip line 1 is
It is formed by a method such as thick-film printing or thin-film forming means or plating using Cu or MoMn + Cu.W + Au or the like, and its thickness and width are determined, for example, by using a ceramic substrate having a relative dielectric constant of about 9 in a microstrip line. When the impedance is designed to be 50Ω, the thickness and the width are almost the same.
【００２０】また、マイクロストリップ線路１の接地導
体４は、上記と同様の材料を用いて同様の方法により誘
電体２の下面全面に形成され、その厚みは、例えば厚膜
であれば約30μｍ程度とされる。The ground conductor 4 of the microstrip line 1 is formed on the entire lower surface of the dielectric 2 by the same method using the same material as described above, and its thickness is, for example, about 30 μm for a thick film. It is said.
【００２１】一方、ストリップ線路５の誘電体６は上記
誘電体２と同じ材料を用いて同様の方法で形成される
が、このストリップ線路５が例えば高周波パッケージの
入出力部として使用されるため、信号線７を上下から挟
み込むように形成される。ここで、誘電体６の厚みは、
信号線７より下部はマイクロストリップ線路１の誘電体
２の厚みと同じに設定され、信号線７より上部は任意に
設定される。On the other hand, the dielectric 6 of the strip line 5 is formed in the same manner using the same material as that of the dielectric 2, but since the strip line 5 is used, for example, as an input / output unit of a high-frequency package, It is formed so as to sandwich the signal line 7 from above and below. Here, the thickness of the dielectric 6 is
The thickness below the signal line 7 is set to be the same as the thickness of the dielectric 2 of the microstrip line 1, and the thickness above the signal line 7 is arbitrarily set.
【００２２】また、ストリップ線路５の信号線７は上記
信号線３と同じ材料を用いて同様の方法により形成さ
れ、その厚みは信号線３と同じに設定されるが、上下を
接地導体８・９により挟んだ誘電体６中に埋設されるこ
とから伝送される高周波電気信号に対する寄生容量が増
加することで特性インピーダンスが低くなるため、信号
線３のインピーダンスと整合させるために、その幅は信
号線３よりも狭く設定される。例えば、本実施例におい
ては幅0.6 ｍｍ程度とされる。The signal line 7 of the strip line 5 is formed by the same method using the same material as the signal line 3 and has the same thickness as that of the signal line 3. Since the characteristic impedance is reduced by increasing the parasitic capacitance with respect to the high-frequency electric signal transmitted from being buried in the dielectric 6 sandwiched between the wires 9, the width of the signal is adjusted to match the impedance of the signal line 3. It is set narrower than line 3. For example, in this embodiment, the width is about 0.6 mm.
【００２３】ストリップ線路５の一方の接地導体８およ
び他方の接地導体９は、マイクロストリップ線路１の接
地導体４と同じ材料を用いて同様の方法により、それぞ
れ誘電体６の下面および上面の全面に形成される。ま
た、一方の接地導体８の厚みは接地導体４と同じに設定
され、他方の接地導体９の厚みは一般的に一方の接地導
体８と同じに設定される。One ground conductor 8 and the other ground conductor 9 of the strip line 5 are formed on the entire lower and upper surfaces of the dielectric 6 by the same method using the same material as the ground conductor 4 of the microstrip line 1. It is formed. The thickness of one ground conductor 8 is set to be the same as that of the ground conductor 4, and the thickness of the other ground conductor 9 is generally set to be the same as that of the one ground conductor 8.
【００２４】マイクロストリップ線路１の信号線３とス
トリップ線路５の信号線７との接続部10は、誘電体６の
内部に信号線３および信号線７と同じ材料を用いて同様
の方法で同じ厚みに形成され、前述のように信号線３と
信号線７を接続するテーパー形状に形成される。このテ
ーパーの長さ、すなわち接続部10の長さは、反射波の生
じる度合を小さくする効果が得られるとして一般的に採
用されている範囲内（ほぼ段差状〜２ｍｍ前後）に設定
するとよい。The connection portion 10 between the signal line 3 of the microstrip line 1 and the signal line 7 of the strip line 5 is formed in the same manner by using the same material as the signal lines 3 and 7 inside the dielectric 6. It is formed in a thickness, and is formed in a tapered shape for connecting the signal line 3 and the signal line 7 as described above. The length of the taper, that is, the length of the connecting portion 10 may be set within a range generally adopted as the effect of reducing the degree of generation of the reflected wave is obtained (substantially a stepped shape to about 2 mm).
【００２５】そして、接続導体11は、接続部10の長さの
範囲内で、接続部10の両側で信号の伝送方向に対して垂
直な方向に少なくとも各１個配設される。これにより、
前述のように伝送方向に垂直な方向での共振が抑制され
て伝送不良を防止することができる。また、接続導体11
を信号の伝送方向に対して平行な方向に周期的に配設す
る必要がなくなるので信号線７における伝搬定数の周期
的な変化をなくすことができ、これらにより良好な伝送
特性が得られる伝送線路接続構造となる。At least one connecting conductor 11 is provided on both sides of the connecting portion 10 in a direction perpendicular to the signal transmission direction within the range of the length of the connecting portion 10. This allows
As described above, resonance in the direction perpendicular to the transmission direction is suppressed, and transmission failure can be prevented. In addition, connection conductor 11
Need not be periodically arranged in a direction parallel to the signal transmission direction, so that a periodic change in the propagation constant in the signal line 7 can be eliminated, and a transmission line with good transmission characteristics can be obtained. It becomes a connection structure.
【００２６】この接続導体11としては、接続部10の両側
で信号の伝送方向に対して垂直な方向において一方の接
地導体８と他方の接地導体９とを接続するものであれば
種々の形状や構造のものを用いることができ、例えば、
貫通孔の内側にメッキや導電性ペーストの印刷・焼結な
どの方法により導体金属を被着形成したもの（スルーホ
ール）、あるいは貫通孔の内部に導電性ペーストの印刷
・焼結などの方法により導体金属を充填したビアホー
ル、誘電体６の内部に導体金属から成る導体部材を組み
込んだもの、メタライズ層、前記のスルーホールやビア
ホールの断面形状を円形でなく楕円状、矩形状、多角形
状、板状などの種々の形状としたものなどを用いること
ができる。The connection conductor 11 has various shapes and shapes as long as it connects one ground conductor 8 and the other ground conductor 9 in a direction perpendicular to the signal transmission direction on both sides of the connection portion 10. Structures can be used, for example,
Conductive metal is applied to the inside of the through-hole by plating or printing / sintering a conductive paste (through-hole), or by printing / sintering a conductive paste inside the through-hole. Via holes filled with conductive metal, those incorporating a conductive member made of conductive metal inside dielectric 6, metallized layers, cross-sectional shapes of the above-mentioned through holes and via holes are not circular but oval, rectangular, polygonal, plate, Various shapes such as shapes can be used.
【００２７】これらのような接続導体11の配置について
は、接続部10の両側に最も近接した２つの接続導体11の
長さ（図３に示すＬ）と、それら２つの接続導体11の間
隔（図３に示すＷ）との和を、伝送される高周波電気信
号のうち最高の周波数の信号の波長λの２分の１以下に
設定すること、すなわち２Ｌ＋Ｗ≦λ／２に設定するこ
とが好ましい。これにより、ストリップ線路５の一方の
接地導体８と共有されたマイクロストリップ線路１の接
地導体４は最も電位が安定しているが、接続導体11のう
ち信号線３・７の接続部10の両側に最も近接した２つの
接続導体11の長さＬと、その間の他方の接地導体９の間
隔Ｗとの３辺の接地状態は電位変化が生じやすく、それ
らの長さ２Ｌと間隔Ｗとの和２Ｌ＋Ｗが信号の波長λの
２分の１程度になる場合には他方の接地導体９の信号線
７上方に相当する部分が最も電位が高くなって特性イン
ピーダンスのずれが最も大きくなるのに対して、その和
２Ｌ＋Ｗが信号の波長λの２分の１よりも短かければ
（２Ｌ＋Ｗ≦λ／２）共振は生じないことから、信号の
伝送方向に対して垂直な方向での共振がより効果的に抑
制され、伝送不良を顕著に防止することができる。With respect to the arrangement of the connection conductors 11 as described above, the length (L shown in FIG. 3) of the two connection conductors 11 closest to both sides of the connection portion 10 and the distance (the distance between the two connection conductors 11) It is preferable to set the sum with W) shown in FIG. 3 to be equal to or less than half the wavelength λ of the highest frequency signal among the transmitted high-frequency electric signals, that is, to set 2L + W ≦ λ / 2. . As a result, the ground conductor 4 of the microstrip line 1 shared with one of the ground conductors 8 of the strip line 5 has the most stable potential, but the connection conductor 11 has both sides of the connection portion 10 of the signal lines 3.7. In the grounding state on three sides, that is, the length L of the two connection conductors 11 closest to the ground and the distance W between the other grounding conductor 9 therebetween, potential changes easily occur, and the sum of the length 2L and the distance W is obtained. When 2L + W is about one half of the wavelength λ of the signal, the portion of the other ground conductor 9 above the signal line 7 has the highest potential and the deviation of the characteristic impedance is the largest. If the sum 2L + W is shorter than one half of the wavelength λ of the signal (2L + W ≦ λ / 2), resonance does not occur, so that resonance in the direction perpendicular to the signal transmission direction is more effective. To prevent transmission failures It can be.
【００２８】また、接続部10の両側に最も近接した２つ
の接続導体11の間隔（Ｗ）は、ストリップ線路５の信号
線７の幅の２倍以上に設定することが好ましく、２つの
接続導体11を信号線７に近づけ過ぎると信号線７から見
た容量が増加して接地がとりにくくなる傾向がある。The interval (W) between the two connection conductors 11 closest to both sides of the connection portion 10 is preferably set to be at least twice the width of the signal line 7 of the strip line 5, If the distance 11 is too close to the signal line 7, the capacitance seen from the signal line 7 increases, and it tends to be difficult to ground.
【００２９】また、接続導体11とストリップ線路５の端
部（マイクロストリップ線路１との接続部10の始まる端
面）との距離は、接続導体11の厚みの２倍以内、接続導
体11がスルーホールあるいはビアホールの場合はその直
径の２倍以内とするのが好ましい。The distance between the connection conductor 11 and the end of the strip line 5 (the end face where the connection portion 10 with the microstrip line 1 starts) is within twice the thickness of the connection conductor 11, and the connection conductor 11 is formed in a through hole. Alternatively, in the case of a via hole, the diameter is preferably within twice the diameter.
【００３０】さらに本発明の伝送線路接続構造に対して
は、ストリップ線路５の一方の接地導体８と他方の接地
導体９とを接続する接続導体として、上記構成の接続導
体11とともに、従来の伝送方向に対して平行な方向に周
期的に配列した接続導体を併設してもよい。この場合、
伝搬定数は変化しているが、接続部10が有する共振特性
の共振周波数が高くなるのと信号線７に近い所に接地さ
れた接続導体11が供給されるために接地状態が安定しや
すいことから、ストリップ線路５の伝搬定数の周期的な
変化が低減でき、良好な伝送特性が得られる。Further, with respect to the transmission line connection structure of the present invention, as a connection conductor for connecting one ground conductor 8 and the other ground conductor 9 of the strip line 5 together with the connection conductor 11 having the above-described configuration, a conventional transmission line is used. Connection conductors periodically arranged in a direction parallel to the direction may be provided. in this case,
Although the propagation constant is changed, the grounding state is easily stabilized because the grounded connection conductor 11 is supplied near the signal line 7 because the resonance frequency of the resonance characteristic of the connection part 10 is increased. Accordingly, a periodic change in the propagation constant of the strip line 5 can be reduced, and good transmission characteristics can be obtained.
【００３１】[0031]
【実施例】以下、本発明の具体例を示す。EXAMPLES Specific examples of the present invention will be described below.
【００３２】〔例１〕誘電体として比誘電率が4.3 、厚
みが0.5 ｍｍのガラスエポキシから成る両面銅張基板を
用いて、まず片面をパターニングしてマイクロストリッ
プ線路を作製した。また、同様にしてストリップ線路の
下側を作製し、それに片面銅張基板を重ね合わせ、それ
ら基板に貫通孔を形成して金属棒を挿入した後半田処理
することで両面の接地導体を電気的に接続するビアホー
ルを形成し、ストリップ線路を作製した。なお、接続部
は、マイクロストリップ線路とストリップ線路の下側基
板が同一なので信号線のパターン処理のみにより作製し
た。このようにして、図１〜図３に示した構成の、幅1.
0 ｍｍ×厚み0.025 ｍｍ×長さ2.0 ｍｍの信号線３を有
する幅40ｍｍ×厚み0.5 ｍｍ×長さ2.0 ｍｍのマイクロ
ストリップ線路１と、幅0.6 ｍｍ×厚み0.025 ｍｍ×長
さ20ｍｍの信号線７を有する幅40ｍｍ×厚み1.0 ｍｍ×
長さ20ｍｍのストリップ線路５と、信号線３と信号線７
を接続する接続部10と、接続部10の両側に伝送方向に対
して垂直に配設した４つずつの接続導体（ビアホール）
11から成る、広帯域伝送を目的とした伝送線路変換基板
に対する本発明の伝送線路接続構造Ａを作製した。Example 1 A microstrip line was prepared by first patterning one surface of a double-sided copper-clad substrate made of glass epoxy having a relative permittivity of 4.3 and a thickness of 0.5 mm as a dielectric. Similarly, the lower side of the strip line is prepared, a single-sided copper-clad board is superimposed on the lower side, a through-hole is formed in the board, a metal bar is inserted, and soldering is performed. Was formed to form a strip line. Note that the connection portion was manufactured only by patterning the signal lines because the lower substrate of the microstrip line and the strip line were the same. In this way, the width of the configuration shown in FIGS.
Microstrip line 1 having a width of 40 mm x a thickness of 0.5 mm x a length of 2.0 mm having a signal line 3 of 0 mm x a thickness of 0.025 mm x a length of 2.0 mm, and a signal line 7 having a width of 0.6 mm x a thickness of 0.025 mm x a length of 20 mm With width 40 mm x thickness 1.0 mm x
20 mm long strip line 5, signal line 3 and signal line 7
And four connection conductors (via holes) arranged perpendicularly to the transmission direction on both sides of the connection 10
A transmission line connection structure A of the present invention for a transmission line conversion substrate for wideband transmission was manufactured.
【００３３】ここで、ビアホール11は、直径が0.6 ｍ
ｍ、長さＬが1.0 ｍｍ、伝送方向に対して垂直な方向の
配設ピッチが４ｍｍ、接続部10の両側に最も近接した２
つのビアホール11の間隔Ｗが８ｍｍ、ストリップ線路５
の端部からの距離が1.0 ｍｍとなるように設定した。こ
のとき、２Ｌ＋Ｗは10ｍｍであり、伝送される最高の周
波数の信号の波長λの２分の１以下である。Here, the diameter of the via hole 11 is 0.6 m.
m, the length L is 1.0 mm, the arrangement pitch in the direction perpendicular to the transmission direction is 4 mm,
The interval W between two via holes 11 is 8 mm, and the strip line 5
Was set so that the distance from the end portion was 1.0 mm. At this time, 2L + W is 10 mm, which is equal to or less than half the wavelength λ of the highest frequency signal transmitted.
【００３４】上記の伝送線路接続構造Ａについて、45Ｍ
Ｈｚ〜10ＧＨｚの周波数域におけるＳパラメータ（Scat
tering Parameter：散乱パラメータ）として反射特性Ｓ
11および伝送特性Ｓ21を、ベクトルネットワークアナラ
イザを用いて基板固定治具に伝送線路接続構造Ａを固定
し、治具端面での校正を行なって治具から見込んだ特性
として測定した。For the above transmission line connection structure A, 45M
S-parameter (Scat) in the frequency range of 10 Hz to 10 GHz.
tering Parameter: scattering characteristic S
11 and the transmission characteristic S 21, the transmission line connection structure A was fixed to a substrate fixing jig with a vector network analyzer was measured as expected but characteristic from the jig by performing calibration jig end surface.
【００３５】これらの測定結果を図４に示す。図４
（ａ）は伝送線路接続構造Ａの反射ＳパラメータＳ11の
周波数特性を示すグラフであり、横軸は周波数ｆ〔ＧＨ
ｚ〕を、縦軸はＳ11〔ｄＢ〕を表わし、図中の曲線はｆ
に対するＳ11の変化を示している。また、図４（ｂ）は
同じく伝送ＳパラメータＳ21の周波数特性を示すグラフ
であり、横軸は周波数ｆ〔ＧＨｚ〕を、縦軸はＳ21〔ｄ
Ｂ〕を表わし、図中の曲線はｆに対するＳ21の変化を示
している。これらより分かるように、周波数の高い領域
（８ＧＨｚ以上）におけるビアホール間での共振もわず
かなものであり、伝送周波数域では共振が生じていない
ため伝送されない周波数もなく、伝送特性が極めて良好
である。FIG. 4 shows the results of these measurements. FIG.
(A) is a graph showing a frequency characteristic of a reflection S parameter S 11 of the transmission line connection structure A, the horizontal axis represents the frequency f [GH
z], the vertical axis represents S 11 [dB], and the curve in the figure is f
Shows a change in S 11 with respect to. FIG. 4B is a graph showing the frequency characteristic of the transmission S parameter S 21 , where the horizontal axis represents the frequency f [GHz] and the vertical axis represents S 21 [d
B], and the curve in the figure shows the change of S 21 with respect to f. As can be seen from these figures, resonance between via holes in a high frequency region (8 GHz or more) is slight, and there is no resonance in the transmission frequency region, so there is no frequency that is not transmitted, and the transmission characteristics are extremely good. .
【００３６】なお、伝送線路接続構造Ａの作製に際して
接続部10の両側に最も近接した２つのビアホール11の間
隔Ｗを15ｍｍとして２Ｌ＋Ｗが最高周波数のλ／２より
も大きくなるようにしたところ、伝送特性は若干低下し
たものとなったが実用上問題のない良好な特性であっ
た。When the transmission line connection structure A is manufactured, the distance W between the two via holes 11 closest to both sides of the connection portion 10 is set to 15 mm so that 2L + W is larger than the maximum frequency λ / 2. Although the characteristics were slightly lowered, they were good characteristics having no practical problems.
【００３７】〔例２〕〔例１〕と同様にして伝送線路接
続構造を作製するのに際し、図２に示した接続導体11に
代えて、図５に示すように、ストリップ線路12において
伝送方向に対して平行な方向に配設した接続導体13を形
成し、比較例の伝送線路接続構造Ｂを得た。図５は図２
と同様の横断面図であり、図２と同様の箇所には同じ符
号を付してある。同図においてストリップ線路12に形成
した接続導体13は、〔例１〕と同様の直径0.6 ｍｍのビ
アホールとし、信号線７を挟んだ距離を38ｍｍ、伝送方
向に対して平行な方向のピッチを４ｍｍ、ストリップ線
路12の側面との距離を1.0 ｍｍとした。[Example 2] In manufacturing a transmission line connection structure in the same manner as in [Example 1], instead of the connection conductor 11 shown in FIG. Was formed in a direction parallel to the above, and a transmission line connection structure B of a comparative example was obtained. FIG. 5 is FIG.
FIG. 3 is a cross-sectional view similar to that of FIG. In the figure, the connection conductor 13 formed in the strip line 12 is a via hole having a diameter of 0.6 mm as in [Example 1], the distance sandwiching the signal line 7 is 38 mm, and the pitch in the direction parallel to the transmission direction is 4 mm. The distance from the side of the strip line 12 was set to 1.0 mm.
【００３８】この伝送線路接続構造Ｂについて〔例１〕
と同様の測定方法により反射特性Ｓ11および伝送特性Ｓ
21を求めた。その結果を図６に示す。図６（ａ）および
（ｂ）は、それぞれ図４（ａ）および（ｂ）と同様のＳ
11の周波数特性およびＳ21の周波数特性を示すグラフで
ある。This transmission line connection structure B [Example 1]
Reflection characteristics S 11 and transmission characteristic S measured in the same manner as
I asked for 21 . FIG. 6 shows the result. FIGS. 6A and 6B show the same S as those in FIGS. 4A and 4B, respectively.
11 is a graph showing a frequency characteristic of the frequency characteristic and the S 21 of.
【００３９】これらより分かるように、2.2 ＧＨｚ付近
にはλ／２に相当すると思われる接続部の両側のビアホ
ール間での、また８ＧＨｚ付近には３λ／２に相当する
と思われる接続部の両側のビアホール間での強い共振が
生じており、それにより伝送されない周波数域が存在し
ている。従って、本発明の伝送線路接続構造Ａよりも伝
送特性が劣るものであった。As can be seen from these, between the via holes on both sides of the connection portion which is considered to correspond to λ / 2 at around 2.2 GHz, and on both sides of the connection portion which is considered to correspond to 3λ / 2 at around 8 GHz. Strong resonance occurs between the via holes, and there is a frequency range that is not transmitted. Therefore, the transmission characteristics were inferior to those of the transmission line connection structure A of the present invention.
【００４０】〔例３〕〔例１〕と同様にして伝送線路接
続構造を作製するのに際し、図７に示すように、図２に
示した接続導体11とともに、ストリップ線路14において
〔例２〕と同様の伝送方向に対して平行な方向に配設し
た接続導体13を形成し、本発明の伝送線路接続構造Ｃを
得た。図７は図２および図５と同様の横断面図であり、
図２および図５と同様の箇所には同じ符号を付してあ
る。同図においてストリップ線路14に形成した接続導体
11は〔例１〕と同様のものとし、接続導体13は〔例２〕
と同様のものとした。[Example 3] In manufacturing a transmission line connection structure in the same manner as in [Example 1], as shown in FIG. 7, together with the connection conductor 11 shown in FIG. The connection conductor 13 arranged in the same direction as the transmission direction was formed to obtain the transmission line connection structure C of the present invention. FIG. 7 is a cross-sectional view similar to FIGS. 2 and 5,
2 and FIG. 5 are denoted by the same reference numerals. The connection conductor formed on the strip line 14 in FIG.
11 is the same as in [Example 1], and the connection conductor 13 is [Example 2].
And the same.
【００４１】この伝送線路接続構造Ｃについても〔例
１〕と同様の測定方法により反射特性Ｓ11および伝送特
性Ｓ21を求めた。その結果を図８に示す。図８（ａ）お
よび（ｂ）も、それぞれ図４（ａ）および（ｂ）と同様
のＳ11の周波数特性およびＳ21の周波数特性を示すグラ
フである。With respect to the transmission line connection structure C, the reflection characteristics S 11 and the transmission characteristics S 21 were obtained by the same measurement method as in [Example 1]. FIG. 8 shows the result. Figure 8 (a) and (b) also is a graph showing a frequency characteristic of the frequency characteristic and the S 21 similar S 11 respectively Figure 4 (a) and 4 (b).
【００４２】これらより分かるように、5.6 ＧＨｚおよ
び4.3 ＧＨｚ付近においてそれぞれ若干の共振が生じて
いるが、伝送線路接続構造Ｂで2.2 ＧＨｚおよび８ＧＨ
ｚにおいて生じていた強い共振ならびにそれによる伝送
されない周波数域は、広帯域伝送を目的とする実用上支
障のないレベルに抑制されている。従って、本発明の伝
送線路接続構造Ｃにおいては、ストリップ線路14の信号
線７の両側に信号の伝送方向に対して平行な方向に周期
的に配設した接地導体13を併設した場合であっても、良
好な伝送特性が得られることが分かる。As can be seen from these figures, although some resonances occur around 5.6 GHz and 4.3 GHz, respectively, the transmission line connection structure B has 2.2 GHz and 8 GHz.
The strong resonance that has occurred in z and the frequency range in which it is not transmitted are suppressed to a level that does not hinder practical use for wideband transmission. Therefore, in the transmission line connection structure C of the present invention, the ground conductor 13 periodically arranged in a direction parallel to the signal transmission direction is provided on both sides of the signal line 7 of the strip line 14. Also, it can be seen that good transmission characteristics can be obtained.
【００４３】なお、本発明は以上の具体例に限定される
ものではなく、本発明の要旨を逸脱しない範囲で種々の
変更・改良を加えることは何ら差し支えない。It should be noted that the present invention is not limited to the specific examples described above, and various changes and improvements can be made without departing from the spirit of the present invention.
【００４４】[0044]
【発明の効果】以上のように、本発明の伝送線路接続構
造によれば、マイクロストリップ線路の信号線とストリ
ップ線路の信号線との接続部の両側でそれぞれ信号の伝
送方向に対して垂直な方向に配設した少なくとも各１個
のビアホール等の接続導体を介してストリップ線路の他
方の接地導体と一方の接地導体とを接続し、接続部の両
側に最も近接した２つの接続導体の間隔をストリップ線
路の信号線の幅の２倍以上とし、かつこれら２つの接続
導体とストリップ線路の端部との距離を接続導体の厚み
の２倍以内としたことから、ストリップ線路の高周波電
気信号に対する伝搬定数の周期的な変化や共振が発生し
なくなって伝送不良をなくすことができ、設計仕様に合
致した所望通りの良好な伝送特性を得ることができる伝
送線路接続構造を提供することができた。As described above, according to the transmission line connection structure of the present invention, both sides of the connection between the signal line of the microstrip line and the signal line of the strip line are perpendicular to the signal transmission direction. The other ground conductor and one ground conductor of the strip line are connected via at least one connection conductor such as a via hole arranged in each direction, and the distance between the two connection conductors closest to both sides of the connection portion is set. Since the width of the strip line is at least twice the width of the signal line and the distance between these two connection conductors and the end of the strip line is within twice the thickness of the connection conductor, the propagation of the strip line to high-frequency electric signals is suppressed. A transmission line connection structure that can eliminate transmission failures due to the absence of periodic changes and resonances in constants and obtain desired good transmission characteristics that meet design specifications I was able to provide.
【００４５】また、本発明の伝送線路接続構造によれ
ば、接続導体のうち信号線の接続部の両側に最も近接し
た２つの接続導体の長さと、その２つの接続導体の間隔
との和を、伝送される信号のうち最高周波数の信号の波
長の２分の１以下に設定することにより、接続部からス
トリップ線路における伝送特性の悪化を効果的に抑制す
ることができ、さらに優れた伝送特性を得ることができ
る伝送線路接続構造を提供することができた。Further, according to the transmission line connection structure of the present invention, the sum of the length of the two connection conductors closest to both sides of the connection portion of the signal line among the connection conductors and the distance between the two connection conductors is determined. By setting the wavelength to be equal to or less than half the wavelength of the highest frequency signal among the signals to be transmitted, it is possible to effectively suppress the deterioration of the transmission characteristics in the strip line from the connection portion, and to further improve the transmission characteristics. Can be provided.
【００４６】さらに、本発明の伝送線路接続構造によれ
ば、ストリップ線路の２つの接地導体を接続するための
ビアホール等の接続導体を接続部の両側に配置するだけ
で所望の伝送特性が得られるため、それら接続導体の使
用を従来と比較して大幅に低減することができ、製造工
程における工数・時間・コストを大幅に削減できるもの
となる。Further, according to the transmission line connection structure of the present invention, desired transmission characteristics can be obtained only by arranging connection conductors such as via holes for connecting two ground conductors of the strip line on both sides of the connection portion. Therefore, the use of these connection conductors can be greatly reduced as compared with the conventional case, and the number of steps, time and cost in the manufacturing process can be greatly reduced.
【図１】本発明の伝送線路接続構造の一実施例を示す斜
視図である。FIG. 1 is a perspective view showing one embodiment of a transmission line connection structure of the present invention.
【図２】図１の信号線と同一平面を示す横断面図であ
る。FIG. 2 is a cross-sectional view showing the same plane as a signal line of FIG. 1;
【図３】図１ならびに図２のＡ−Ａ線断面図である。FIG. 3 is a sectional view taken along line AA of FIGS. 1 and 2;
【図４】（ａ）および（ｂ）はそれぞれ本発明の伝送線
路接続構造の一実施例における反射ＳパラメータＳ11お
よび伝送ＳパラメータＳ21の周波数特性を示すグラフで
ある。4 (a) and (b) is a graph showing a frequency characteristic of a reflection S parameter S 11 and transmission S parameter S 21 in an embodiment of the transmission line connection structure of the present invention, respectively.
【図５】比較例の伝送線路接続構造を示す断面図であ
る。FIG. 5 is a sectional view showing a transmission line connection structure of a comparative example.
【図６】（ａ）および（ｂ）はそれぞれ比較例の伝送線
路接続構造における反射ＳパラメータＳ11および伝送Ｓ
パラメータＳ21の周波数特性を示すグラフである。FIGS. 6A and 6B are respectively a reflection S parameter S 11 and a transmission S in a transmission line connection structure of a comparative example.
Is a graph showing a frequency characteristic of the parameter S 21.
【図７】本発明の伝送線路接続構造の他の実施例を示す
断面図である。FIG. 7 is a sectional view showing another embodiment of the transmission line connection structure of the present invention.
【図８】（ａ）および（ｂ）はそれぞれ本発明の伝送線
路接続構造の他の実施例における反射ＳパラメータＳ11
および伝送ＳパラメータＳ21の周波数特性を示すグラフ
である。FIGS. 8A and 8B are reflection S parameters S 11 in another embodiment of the transmission line connection structure of the present invention, respectively.
And is a graph showing the frequency characteristics of the transmission S parameter S 21.
１・・・・・マイクロストリップ線路 ２・・・・・誘電体 ３・・・・・信号線 ４・・・・・接地導体 ５、14・・・ストリップ線路 ６・・・・・誘電体 ７・・・・・信号線 ８・・・・・一方の接地導体 ９・・・・・他方の接地導体 10・・・・・接続部 11・・・・・接続導体 1 microstrip line 2 dielectric 3 signal line 4 ground conductor 5, 14 strip line 6 dielectric 7 ········ Signal line 8 ······ One ground conductor 9 ······· The other ground conductor 10 ······ Connection part 11 ······ Connection conductor
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平３−64202（ＪＰ，Ａ) 特開 平４−144402（ＪＰ，Ａ) 特開 平５−218712（ＪＰ，Ａ) 特開 平６−112351（ＪＰ，Ａ) 特開 平６−53703（ＪＰ，Ａ) 特開 平３−80601（ＪＰ，Ａ) 特開 昭63−108756（ＪＰ，Ａ) 実開 平５−15508（ＪＰ，Ｕ) 実開 昭63−72906（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01P 3/08 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-3-64202 (JP, A) JP-A-4-144402 (JP, A) JP-A-5-218712 (JP, A) JP-A-6-204 112351 (JP, A) JP-A-6-53703 (JP, A) JP-A-3-80601 (JP, A) JP-A-63-108756 (JP, A) JP-A-5-15508 (JP, U) 63-72906 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01P 3/08
Claims (2)
リップ線路の信号線とを接続して成る伝送線路接続構造
であって、前記マイクロストリップ線路の接地導体を前
記ストリップ線路の一方の接地導体に接続させるととも
に、前記ストリップ線路の他方の接地導体と前記一方の
接地導体とを、前記マイクロストリップ線路の信号線と
前記ストリップ線路の信号線との接続部の両側で信号の
伝送方向に対して垂直な方向に配設した少なくとも各１
個の接続導体を介して接続して成り、前記接続部の両側
に最も近接した２つの前記接続導体の間隔を前記ストリ
ップ線路の信号線の幅の２倍以上とし、かつこれら２つ
の前記接続導体と前記ストリップ線路の端部との距離を
前記接続導体の厚みの２倍以内としたことを特徴とする
伝送線路接続構造。1. A transmission line connection structure comprising a signal line of a microstrip line and a signal line of a strip line, wherein a ground conductor of the microstrip line is connected to one ground conductor of the strip line. Along with the other ground conductor and the one ground conductor of the strip line, a direction perpendicular to a signal transmission direction on both sides of a connection portion between the signal line of the microstrip line and the signal line of the strip line. At least one each
Connection conductors on both sides of the connection part
The distance between the two connection conductors closest to
At least twice the width of the signal line of the
Distance between the connection conductor and the end of the strip line.
A transmission line connection structure, wherein the thickness is not more than twice the thickness of the connection conductor .
の両側に最も近接した２つの接続導体の長さと、該２つ
の接続導体の間隔との和を、伝送される信号のうち最高
周波数の信号の波長の２分の１以下に設定したことを特
徴とする請求項１記載の伝送線路接続構造。2. The sum of the length of the two connection conductors closest to both sides of the connection part of the signal line of the connection conductors and the interval between the two connection conductors is determined by the highest frequency among the transmitted signals. 2. The transmission line connection structure according to claim 1, wherein the wavelength is set to a half or less of the wavelength of said signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06999896A JP3301912B2 (en) | 1996-03-26 | 1996-03-26 | Transmission line connection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06999896A JP3301912B2 (en) | 1996-03-26 | 1996-03-26 | Transmission line connection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09260905A JPH09260905A (en) | 1997-10-03 |
| JP3301912B2 true JP3301912B2 (en) | 2002-07-15 |
Family
ID=13418860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06999896A Expired - Lifetime JP3301912B2 (en) | 1996-03-26 | 1996-03-26 | Transmission line connection structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3301912B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100816355B1 (en) * | 2006-01-10 | 2008-03-26 | 센싱테크 주식회사 | MMIC bonding Method on Non-Radiative MicrostripLine |
| WO2014156422A1 (en) * | 2013-03-26 | 2014-10-02 | 株式会社村田製作所 | Resin multi-layer substrate and electronic apparatus |
| WO2016052125A1 (en) * | 2014-09-30 | 2016-04-07 | 株式会社村田製作所 | Transmission line member and electronic apparatus |
-
1996
- 1996-03-26 JP JP06999896A patent/JP3301912B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09260905A (en) | 1997-10-03 |
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