JP3261649B2 - Growth method of lithium tetraborate single crystal for optics - Google Patents
Growth method of lithium tetraborate single crystal for opticsInfo
- Publication number
- JP3261649B2 JP3261649B2 JP06259997A JP6259997A JP3261649B2 JP 3261649 B2 JP3261649 B2 JP 3261649B2 JP 06259997 A JP06259997 A JP 06259997A JP 6259997 A JP6259997 A JP 6259997A JP 3261649 B2 JP3261649 B2 JP 3261649B2
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- JP
- Japan
- Prior art keywords
- single crystal
- lithium tetraborate
- tetraborate single
- phase matching
- degrees
- Prior art date
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は、四ほう酸リチウム
単結晶の育成方法に関する。更に詳しくは、位相整合方
位に切出した種結晶を用いた光学用四ほう酸リチウム単
結晶の育成方法に関するものである。[0001] The present invention relates to a method for growing a lithium tetraborate single crystal. More specifically, the present invention relates to a method for growing an optical lithium tetraborate single crystal using a seed crystal cut in a phase matching orientation.
【０００２】[0002]
【従来の技術】四ほう酸リチウム（Ｌｉ2Ｂ4Ｏ7）単結
晶は１９８１年にワットモアにより発見され、新しい表
面弾性波（ＳＡＷ）デバイス用の基板材料として注目さ
れている。一方、この四ほう酸リチウム単結晶を波長変
換素子のような光学材料に用いようとする試みがなされ
ていたが、その変換効率の低さから実用化するまでには
至らなかった。従来、これらの四ほう酸リチウム単結晶
は、四ほう酸リチウム単結晶の＜１１０＞方位に切出し
た種結晶を四ほう酸リチウム融液にチョクラルスキー法
（ＣＺ法）により上方より接触させた後、この種結晶を
引上げるか、或はブリッジマン法により上記種結晶を四
ほう酸リチウム融液に下方より接触させた後、融液を下
降させることにより育成されていた。 2. Description of the Related Art Lithium tetraborate (Li 2 B 4 O 7 ) single crystal was discovered by Wattmore in 1981 and has attracted attention as a substrate material for new surface acoustic wave (SAW) devices. On the other hand, attempts have been made to use this lithium tetraborate single crystal as an optical material such as a wavelength conversion element, but the conversion efficiency was low, so that it could not be put to practical use. Conventionally, these lithium tetraborate single crystals are prepared by bringing a seed crystal cut in the <110> orientation of a lithium tetraborate single crystal into contact with a lithium tetraborate melt from above by the Czochralski method (CZ method). The seed crystal is grown by pulling up the seed crystal or bringing the seed crystal into contact with the lithium tetraborate melt from below by the Bridgman method and then lowering the melt.
【０００３】[0003]
【発明が解決しようとする課題】本発明者らが四ほう酸
リチウム単結晶の光学特性について鋭意検討した結果、
この単結晶の光軸（ｃ軸）に対して所定の角度で所定波
長のレーザ光を照射すると、高い変換効率で波長変換す
ることを見い出した。しかしながら、上記従来の方法で
育成した単結晶インゴットから波長変換素子を所定のサ
イズに切出す場合には、有効に使えない単結晶部分が多
く発生し無駄を生じていた。本発明の目的は、育成した
単結晶インゴットから波長変換素子のような光学材料を
切出すときに単結晶インゴットを無駄なく使える光学用
四ほう酸リチウム単結晶を育成する方法を提供すること
にある。The inventors of the present invention have made intensive studies on the optical characteristics of lithium tetraborate single crystal, and have found that
It has been found that when a laser beam having a predetermined wavelength is irradiated at a predetermined angle with respect to the optical axis (c-axis) of the single crystal, the wavelength is converted with high conversion efficiency. However, when a wavelength conversion element is cut into a predetermined size from a single crystal ingot grown by the above-described conventional method, a large number of single crystal portions that cannot be used effectively occur, resulting in waste. An object of the present invention is to provide a method for growing a lithium tetraborate single crystal for optics that can use a single crystal ingot without waste when cutting an optical material such as a wavelength conversion element from the grown single crystal ingot.
【０００４】[0004]
【０００５】[0005]
【０００６】請求項１に係る発明は、図示しないが、四
ほう酸リチウム単結晶のｃ軸から角度が３２±３度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを３２±３度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にＮｄ：ＹＡＧレーザから基本波のレー
ザ光を照射すれば、コヒーレンスの高い２倍波の波長の
光を作り出すことができる。Although not shown, the invention according to claim 1 uses a seed crystal cut out of a lithium tetraborate single crystal into a phase matching direction inclined at an angle of 32 ± 3 degrees from the c-axis by the Czochralski method. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out from the lithium tetraborate single crystal obtained by growing at θm of 32 ± 3 degrees in the same manner as described above, and an Nd: YAG laser is used in parallel or perpendicular to the cutout direction with respect to this wavelength conversion element. By irradiating a wave laser beam, it is possible to generate light having a second harmonic wavelength with high coherence.
【０００７】請求項２に係る発明は、図示しないが、四
ほう酸リチウム単結晶のｃ軸から角度が４０±３度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを４０±３度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にＮｄ：ＹＡＧレーザから基本波とその
２倍波のレーザ光を照射すれば、コヒーレンスの高い３
倍波の波長の光を作り出すことができる。According to a second aspect of the present invention, a Czochralski method is used, although not shown, using a seed crystal cut out of a lithium tetraborate single crystal into a phase matching orientation inclined at an angle of 40 ± 3 degrees from the c-axis. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out from a lithium tetraborate single crystal obtained by growing at a θm of 40 ± 3 degrees in the same manner as described above, and the wavelength conversion element is basically cut from an Nd: YAG laser parallel or perpendicular to the cutting direction. Irradiating the laser beam with the wave and its second harmonic, a high coherence 3
Light of the wavelength of the harmonic can be produced.
【０００８】請求項３に係る発明は、図示しないが、四
ほう酸リチウム単結晶のｃ軸から角度が６６±３度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを６６±３度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にＮｄ：ＹＡＧレーザから基本波の２倍
波のレーザ光を照射すれば、コヒーレンスの高い４倍波
の波長の光を作り出すことができる。According to a third aspect of the present invention, a Czochralski method is used, although not shown, using a seed crystal cut out of a lithium tetraborate single crystal into a phase matching direction inclined at an angle of 66 ± 3 degrees from the c-axis. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out in the same manner as described above from a lithium tetraborate single crystal obtained by growing θm at 66 ± 3 degrees, and the wavelength conversion element is basically cut from a Nd: YAG laser in parallel or perpendicular to the cutting direction. By irradiating a laser beam of a second harmonic of the wave, light of a fourth harmonic wavelength having high coherence can be generated.
【０００９】請求項４に係る発明は、図示しないが、四
ほう酸リチウム単結晶のｃ軸から角度が７４±３度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを７４±３度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にＮｄ：ＹＡＧレーザから基本波とその
４倍波のレーザ光を照射すれば、コヒーレンスの高い５
倍波の波長の光を作り出すことができる。According to a fourth aspect of the present invention, a Czochralski method is used, although not shown, using a seed crystal cut out of a lithium tetraborate single crystal into a phase matching direction inclined at an angle of 74 ± 3 degrees from the c-axis. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out in the same manner as described above from a lithium tetraborate single crystal grown at θm of 74 ± 3 degrees, and the wavelength conversion element is basically cut from an Nd: YAG laser in parallel or perpendicular to the cutting direction. Irradiating the laser beam with the wave and its fourth harmonic, a high coherence 5
Light of the wavelength of the harmonic can be produced.
【００１０】[0010]
【発明の実施の形態】本発明の四ほう酸リチウム単結晶
は、チョクラルスキー法により製造される。即ち、図１
に示すように、チョクラルスキー法では、四ほう酸リチ
ウム単結晶の育成装置２０は四ほう酸リチウム多結晶の
融液２１ａが貯えられている白金るつぼ２１を有する。
四ほう酸リチウムは酸化物の中では低融点であるため、
白金るつぼで育成することができる。白金るつぼ２１の
周囲には断熱材２２，２３を介してるつぼ２１内の四ほ
う酸リチウム多結晶を融解させるための抵抗加熱ヒータ
のような加熱装置２４が設けられる。るつぼ２１内の融
液２１ａの温度は熱電対２９により検出される。るつぼ
２１の上部には断熱壁２５，２６が二重に設けられてお
り、これらの断熱壁２５，２６を貫通して回転・引上げ
機構２７が設けられる。この機構２７の先端には種結晶
１０が配置される。この方法では、加熱装置２４により
るつぼ２１内の四ほう酸リチウム多結晶が融解した後、
この融液２１ａに種結晶１０を接触させ、回転・引上げ
機構２７により、種結晶１０を回転させながら引上げる
ことにより、図示するような四ほう酸リチウム単結晶２
８が育成される。Lithium tetraborate single crystal of the embodiment of the present invention will be more prepared to Czochralski method. That is, FIG.
As shown in (1), in the Czochralski method, a lithium tetraborate single crystal growing apparatus 20 has a platinum crucible 21 in which a melt 21a of lithium tetraborate polycrystal is stored.
Since lithium tetraborate has a low melting point among oxides,
It can be grown in a platinum crucible. Resistance heating heater data for the periphery of the platinum crucible 21 to melt the lithium tetraborate polycrystalline in pot 21, which via a heat insulating materials 22 and 23
Heating device 24 such as is provided. The temperature of the melt 21 a in the crucible 21 is detected by a thermocouple 29. Heat insulating walls 25 and 26 are provided in a double manner at the upper part of the crucible 21, and a rotation / pulling-up mechanism 27 is provided through the heat insulating walls 25 and 26. The seed crystal 10 is disposed at the tip of the mechanism 27. In this method, after the lithium tetraborate polycrystal in the crucible 21 is melted by the heating device 24,
The seed crystal 10 is brought into contact with the melt 21 a and pulled up while rotating the seed crystal 10 by a rotation / pulling-down mechanism 27, so that the lithium tetraborate single crystal 2
8 are raised.
【００１１】[0011]
【００１２】本発明の特徴ある構成は、この種結晶１０
の切出し方位が四ほう酸リチウム単結晶のｃ軸から角度
が３２±３度、４０±３度、６６±３度又は７４±３度
だけ傾いた位相整合方位であることにある。ここで位相
整合方位θmは波長変換素子が二次高調波を発生すると
きのレーザ光と光軸（ｃ軸）との角度である。四ほう酸
リチウム単結晶は、負の一軸結晶であるため位相整合条
件はタイプＩの結晶である。従って、図２に示すように
位相整合条件としては、位相整合角度θmのみを考慮す
れば良く、ｃ面上の回転角Φは考慮する必要がない。図
３は横軸に四ほう酸リチウム単結晶に入射するレーザ光
の波長と、縦軸にその位相整合角度を示す特性図であ
る。この図３に基づいて四ほう酸リチウム単結晶に入射
するレーザ光の波長から、その波長の位相整合角度を容
易に求めることができる。例えばＮｄ：ＹＡＧレーザを
光源とした場合、この波長は１．０６μｍ（１０６４ｎ
ｍ）であるので、補助線ａを引き、特性曲線に当った点
ｐから補助線ｂを引けば、波長１０６４ｎｍのときの位
相整合角度θmは３２度と求められる。Ｎｄ：ＹＡＧレ
ーザ以外の他のレーザ光源を用いた場合にも同様に図３
に基づいてその波長から位相整合角度θmを求めること
ができる。代表的なレーザであるＮｄ：ＹＡＧレーザの
第二高調波、第三高調波、第四高調波及び第五高調波の
各位相整合角度θmは、それぞれ３２度、４０度、６６
度及び７４度と求められる。ただし第三高調波及び第五
高調波は和周波（ＳＦＧ）により得られる。[0012] characteristic configuration of the present invention, the seed crystal 1 0
Angle from the c-axis of the lithium tetraborate single crystal cut orientation of
Is a phase matching direction inclined by 32 ± 3 degrees, 40 ± 3 degrees, 66 ± 3 degrees, or 74 ± 3 degrees . Here, the phase matching direction θm is the angle between the laser beam and the optical axis (c-axis) when the wavelength conversion element generates the second harmonic. Since the lithium tetraborate single crystal is a negative uniaxial crystal, the phase matching condition is a type I crystal. Therefore, as shown in FIG. 2 , only the phase matching angle θm needs to be considered as the phase matching condition, and there is no need to consider the rotation angle Φ on the c-plane. Figure
3 is a characteristic diagram showing the wavelength of laser light incident on the lithium tetraborate single crystal on the horizontal axis and the phase matching angle on the vertical axis. From FIG. 3 , the phase matching angle of the wavelength can be easily obtained from the wavelength of the laser beam incident on the lithium tetraborate single crystal. For example, when an Nd: YAG laser is used as a light source, this wavelength is 1.06 μm (1064 n
m), if the auxiliary line a is drawn and the auxiliary line b is drawn from the point p on the characteristic curve, the phase matching angle θm at the wavelength of 1064 nm is obtained as 32 degrees. FIG. 3 also shows the case where another laser light source other than the Nd: YAG laser is used.
, The phase matching angle θm can be obtained from the wavelength. The phase matching angles θm of the second harmonic, the third harmonic, the fourth harmonic, and the fifth harmonic of an Nd: YAG laser, which is a typical laser, are 32 degrees, 40 degrees, and 66 degrees, respectively.
Degrees and 74 degrees. However, the third harmonic and the fifth harmonic are obtained by the sum frequency (SFG).
【００１３】[0013]
【実施例】次に本発明の実施例を比較例とともに説明す
る。 ＜実施例１＞所定のモル比の純度９９．９９％の四ほう
酸リチウム多結晶原料粉末１３００ｇを、図１に示す直
径９０ｍｍ、高さ１００ｍｍの白金るつぼ２１に充填
し、加熱装置２４で原料粉末を融解した後、ＣＺ法で所
定の引上げ方位に引上げた。即ち、この例では、種結晶
１０はｃ軸から３２度でカットしたものを用いた。融液
表面と融液直上１０ｍｍの温度勾配（降温勾配）を９０
℃／ｃｍにし、それより上部の降温勾配を３０℃／ｃｍ
にした。更に単結晶２８の直胴部育成時には０．４ｍｍ
／時間の速度で単結晶を引上げ、直径２インチ、直胴部
の長さ６５ｍｍの四ほう酸リチウム単結晶２８を育成し
た。 ＜実施例２＞種結晶としてｃ軸から４０度でカットした
ものを用いた以外、実施例１と同様にして、直径２イン
チ、直胴部の長さ６５ｍｍの四ほう酸リチウム単結晶を
育成した。Next, examples of the present invention will be described together with comparative examples. <Example 1> 1300 g of lithium tetraborate polycrystalline raw material powder having a predetermined molar ratio and a purity of 99.99% was charged into a platinum crucible 21 having a diameter of 90 mm and a height of 100 mm shown in FIG. Was melted and then pulled up to a predetermined pulling direction by the CZ method. That is, in this example, the seed crystal 10 cut at 32 degrees from the c-axis was used. A temperature gradient (temperature drop gradient) of 10 mm directly above the melt surface and the melt is 90
° C / cm, and the temperature gradient above it is 30 ° C / cm
I made it. Furthermore, when growing the straight body of the single crystal 28, 0.4 mm
The single crystal was pulled up at a rate of / hour, and a lithium tetraborate single crystal 28 having a diameter of 2 inches and a length of a straight body of 65 mm was grown. Example 2 A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1, except that a seed crystal cut at 40 degrees from the c-axis was used. .
【００１４】[0014]
【００１５】＜比較評価・その１＞ 実施例１及び２の四ほう酸リチウム単結晶の第二次高調
波の特性を評価するために、２つの単結晶を引上げ方向
又は融液の下降方向にそれぞれ１０ｍｍ×１０ｍｍ×３
０ｍｍ（直方体）の同形同大に切出した後、切出し方向
に直角の互いに対向する端面を光学研磨して２つのサン
プルを得た。これらの研磨面をレーザ光の入射面及び出
射面とし、Ｎｄ：ＹＡＧレーザ又はこのレーザと四ほう
酸リチウム単結晶の組合せによって、表１に示す波長を
サンプル毎にサンプルに照射した。その結果、得られた
波長のレーザ光を表１に示す。<Comparative Evaluation Part 1> In order to evaluate the second harmonic characteristics of the lithium tetraborate single crystals of Examples 1 and 2 , two single crystals were pulled in the pulling direction or in the melt descending direction, respectively. 10mm × 10mm × 3
After cut into the same shape and size of 0 mm (cuboid), to give two samples optically polished end faces facing each other perpendicular to the cut direction. These polished surfaces were used as an incident surface and an outgoing surface of the laser beam, and the samples were irradiated with the wavelengths shown in Table 1 for each sample using a Nd: YAG laser or a combination of this laser and a lithium tetraborate single crystal. As a result, the laser light of the obtained wavelength is shown in Table 1.
【００１６】[0016]
【表１】 [Table 1]
【００１７】表１から明らかなように、実施例１からは
２倍波である波長５３２ｎｍの緑色光が、実施例２から
は３倍波である波長３５５ｎｍの紫外光がそれぞれ確認
された。As is clear from Table 1, green light having a wavelength of 532nm is twice wave from Example 1, is ultraviolet light pixels respectively confirmation wavelength 355nm is triple wave from Example 2 Was.
【００１８】＜比較例１＞種結晶としてｃ軸でカットし
たものを用いた以外、実施例１と同様にして、直径２イ
ンチ、直胴部の長さ６５ｍｍの四ほう酸リチウム単結晶
を育成した。 ＜比較例２＞種結晶として＜１１０＞方位に切出したも
のをを用いた以外、実施例１と同様にして、直径２イン
チ、直胴部の長さ６５ｍｍの四ほう酸リチウム単結晶を
育成した。 ＜比較例３＞種結晶としてｘ軸でカットしたものを用い
た以外、実施例１と同様にして、直径２インチ、直胴部
の長さ６５ｍｍの四ほう酸リチウム単結晶を育成した。Comparative Example 1 A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1 except that a seed crystal cut along the c-axis was used. . <Comparative Example 2> A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1 except that a seed crystal cut in the <110> direction was used as a seed crystal. . <Comparative Example 3> A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1 except that a seed crystal cut along the x-axis was used.
【００１９】＜比較評価・その２＞ 比較例１〜比較例３で得られた単結晶からそれぞれ位相
整合角度θm＝４０度、６６度及び７４度に合せたサン
プルを切出した。これらのサンプルのサイズはそれぞれ
実施例１及び２のサンプルと同形同大の１０ｍｍ×１０
ｍｍ×３０ｍｍの直方体に切出した。実施例１及び２の
単結晶から得られたサンプル数と、比較例１〜比較例３
の単結晶から得られたサンプル数を表２に示す。<Comparative Evaluation, Part 2> From the single crystals obtained in Comparative Examples 1 to 3, samples having a phase matching angle θm of 40 °, 66 °, and 74 ° were cut out. The size of these samples was 10 mm × 10 mm, which was the same shape and size as the samples of Examples 1 and 2 , respectively.
It was cut into a rectangular parallelepiped of mm × 30 mm. The number of samples obtained from the single crystals of Examples 1 and 2 , and Comparative Examples 1 to 3
Table 2 shows the number of samples obtained from the single crystal.
【００２０】[0020]
【表２】 [Table 2]
【００２１】表２から明らかなように、実施例１及び２
の単結晶から得られたサンプル数は、比較例１〜比較例
３の単結晶から得られたサンプル数より約１．３倍〜約
２．４倍多かった。これにより、位相整合方位で四ほう
酸リチウム単結晶を育成すると、育成した単結晶を無駄
なく使えることが判った。As is clear from Table 2, Examples 1 and 2
The number of samples obtained from the single crystal of Comparative Example 1 was about 1.3 to about 2.4 times larger than the number of samples obtained from the single crystals of Comparative Examples 1 to 3. Thus, it was found that when growing a lithium tetraborate single crystal in the phase matching orientation, the grown single crystal can be used without waste.
【００２２】[0022]
【発明の効果】以上述べたように、本発明によれば、四
ほう酸リチウム単結晶のｃ軸から角度が３２±３度、４
０±３度、６６±３度又は７４±３だけ傾いた位相整合
方位に切出した種結晶を用いて、チョクラルスキー法又
はブリッジマン法により光学用四ほう酸リチウム単結晶
を育成することにより、育成した単結晶インゴットから
波長変換素子のような光学材料を切出すときに単結晶イ
ンゴットを無駄なく、高い歩留りで使用することができ
る。As described above, according to the present invention, the angle from the c-axis of the lithium tetraborate single crystal is 32 ± 3 degrees,
By growing a single crystal of lithium tetraborate for optics by a Czochralski method or a Bridgman method using a seed crystal cut in a phase matching direction inclined by 0 ± 3 degrees, 66 ± 3 degrees or 74 ± 3 , When cutting an optical material such as a wavelength conversion element from a grown single crystal ingot, the single crystal ingot can be used with a high yield without waste.
【図１】本発明のチョクラルスキー法による四ほう酸リ
チウム単結晶の育成装置の構成図。FIG. 1 is a configuration diagram of an apparatus for growing a lithium tetraborate single crystal by the Czochralski method of the present invention.
【図２】結晶中の位相整合角度の定義を示す概略図。FIG. 2 is a schematic diagram showing a definition of a phase matching angle in a crystal.
【図３】四ほう酸リチウム単結晶へのレーザ光の入射波
長と位相整合角度との関係を示す図。FIG. 3 is a diagram showing a relationship between an incident wavelength of laser light on a lithium tetraborate single crystal and a phase matching angle.
１０ 種結晶 ２１ａ 四ほう酸リチウム融液 ２８ 四ほう酸リチウム単結晶1 0 seed crystal 21 a lithium tetraborate melt 2 8 lithium tetraborate single crystal
フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) C30B 1/00 - 35/00 ＣＡ（ＳＴＮ) ＪＩＣＳＴファイル（ＪＯＩＳ)Continuation of the front page (58) Fields surveyed (Int. Cl. 7 , DB name) C30B 1/00-35/00 CA (STN) JICST file (JOIS)
Claims (4)
が３２±３度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。1. An angle from the c-axis of a lithium tetraborate single crystal
There using the extracted seed crystal phase matching direction inclined by 32 ± 3 °, a method for growing optical lithium tetraborate single crystal by the Czochralski method.
が４０±３度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。2. An angle from the c-axis of a lithium tetraborate single crystal
There is used a seed crystal cut in the phase matching direction inclined by 40 ± 3 °, a method for growing optical lithium tetraborate single crystal by the Czochralski method.
が６６±３度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。3. An angle from the c-axis of the lithium tetraborate single crystal
There is used a seed crystal cut in inclined by phase matching direction 66 ± 3 °, a method for growing optical lithium tetraborate single crystal by the Czochralski method.
が７４±３度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。4. An angle from the c-axis of a lithium tetraborate single crystal
Is a method of growing a lithium tetraborate single crystal for optics by a Czochralski method using a seed crystal cut in a phase matching direction inclined by 74 ± 3 degrees.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06259997A JP3261649B2 (en) | 1997-03-17 | 1997-03-17 | Growth method of lithium tetraborate single crystal for optics |
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| Publication Number | Publication Date |
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| JP3261649B2 true JP3261649B2 (en) | 2002-03-04 |
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- 1997-03-17 JP JP06259997A patent/JP3261649B2/en not_active Expired - Fee Related
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