JP3261649B2 - Growth method of lithium tetraborate single crystal for optics - Google Patents
Growth method of lithium tetraborate single crystal for opticsInfo
- Publication number
- JP3261649B2 JP3261649B2 JP06259997A JP6259997A JP3261649B2 JP 3261649 B2 JP3261649 B2 JP 3261649B2 JP 06259997 A JP06259997 A JP 06259997A JP 6259997 A JP6259997 A JP 6259997A JP 3261649 B2 JP3261649 B2 JP 3261649B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- lithium tetraborate
- tetraborate single
- phase matching
- degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、四ほう酸リチウム
単結晶の育成方法に関する。更に詳しくは、位相整合方
位に切出した種結晶を用いた光学用四ほう酸リチウム単
結晶の育成方法に関するものである。[0001] The present invention relates to a method for growing a lithium tetraborate single crystal. More specifically, the present invention relates to a method for growing an optical lithium tetraborate single crystal using a seed crystal cut in a phase matching orientation.
【0002】[0002]
【従来の技術】四ほう酸リチウム(Li2B4O7)単結
晶は1981年にワットモアにより発見され、新しい表
面弾性波(SAW)デバイス用の基板材料として注目さ
れている。一方、この四ほう酸リチウム単結晶を波長変
換素子のような光学材料に用いようとする試みがなされ
ていたが、その変換効率の低さから実用化するまでには
至らなかった。従来、これらの四ほう酸リチウム単結晶
は、四ほう酸リチウム単結晶の<110>方位に切出し
た種結晶を四ほう酸リチウム融液にチョクラルスキー法
(CZ法)により上方より接触させた後、この種結晶を
引上げるか、或はブリッジマン法により上記種結晶を四
ほう酸リチウム融液に下方より接触させた後、融液を下
降させることにより育成されていた。 2. Description of the Related Art Lithium tetraborate (Li 2 B 4 O 7 ) single crystal was discovered by Wattmore in 1981 and has attracted attention as a substrate material for new surface acoustic wave (SAW) devices. On the other hand, attempts have been made to use this lithium tetraborate single crystal as an optical material such as a wavelength conversion element, but the conversion efficiency was low, so that it could not be put to practical use. Conventionally, these lithium tetraborate single crystals are prepared by bringing a seed crystal cut in the <110> orientation of a lithium tetraborate single crystal into contact with a lithium tetraborate melt from above by the Czochralski method (CZ method). The seed crystal is grown by pulling up the seed crystal or bringing the seed crystal into contact with the lithium tetraborate melt from below by the Bridgman method and then lowering the melt.
【0003】[0003]
【発明が解決しようとする課題】本発明者らが四ほう酸
リチウム単結晶の光学特性について鋭意検討した結果、
この単結晶の光軸(c軸)に対して所定の角度で所定波
長のレーザ光を照射すると、高い変換効率で波長変換す
ることを見い出した。しかしながら、上記従来の方法で
育成した単結晶インゴットから波長変換素子を所定のサ
イズに切出す場合には、有効に使えない単結晶部分が多
く発生し無駄を生じていた。本発明の目的は、育成した
単結晶インゴットから波長変換素子のような光学材料を
切出すときに単結晶インゴットを無駄なく使える光学用
四ほう酸リチウム単結晶を育成する方法を提供すること
にある。The inventors of the present invention have made intensive studies on the optical characteristics of lithium tetraborate single crystal, and have found that
It has been found that when a laser beam having a predetermined wavelength is irradiated at a predetermined angle with respect to the optical axis (c-axis) of the single crystal, the wavelength is converted with high conversion efficiency. However, when a wavelength conversion element is cut into a predetermined size from a single crystal ingot grown by the above-described conventional method, a large number of single crystal portions that cannot be used effectively occur, resulting in waste. An object of the present invention is to provide a method for growing a lithium tetraborate single crystal for optics that can use a single crystal ingot without waste when cutting an optical material such as a wavelength conversion element from the grown single crystal ingot.
【0004】[0004]
【0005】[0005]
【0006】請求項1に係る発明は、図示しないが、四
ほう酸リチウム単結晶のc軸から角度が32±3度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを32±3度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にNd:YAGレーザから基本波のレー
ザ光を照射すれば、コヒーレンスの高い2倍波の波長の
光を作り出すことができる。Although not shown, the invention according to claim 1 uses a seed crystal cut out of a lithium tetraborate single crystal into a phase matching direction inclined at an angle of 32 ± 3 degrees from the c-axis by the Czochralski method. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out from the lithium tetraborate single crystal obtained by growing at θm of 32 ± 3 degrees in the same manner as described above, and an Nd: YAG laser is used in parallel or perpendicular to the cutout direction with respect to this wavelength conversion element. By irradiating a wave laser beam, it is possible to generate light having a second harmonic wavelength with high coherence.
【0007】請求項2に係る発明は、図示しないが、四
ほう酸リチウム単結晶のc軸から角度が40±3度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを40±3度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にNd:YAGレーザから基本波とその
2倍波のレーザ光を照射すれば、コヒーレンスの高い3
倍波の波長の光を作り出すことができる。According to a second aspect of the present invention, a Czochralski method is used, although not shown, using a seed crystal cut out of a lithium tetraborate single crystal into a phase matching orientation inclined at an angle of 40 ± 3 degrees from the c-axis. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out from a lithium tetraborate single crystal obtained by growing at a θm of 40 ± 3 degrees in the same manner as described above, and the wavelength conversion element is basically cut from an Nd: YAG laser parallel or perpendicular to the cutting direction. Irradiating the laser beam with the wave and its second harmonic, a high coherence 3
Light of the wavelength of the harmonic can be produced.
【0008】請求項3に係る発明は、図示しないが、四
ほう酸リチウム単結晶のc軸から角度が66±3度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを66±3度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にNd:YAGレーザから基本波の2倍
波のレーザ光を照射すれば、コヒーレンスの高い4倍波
の波長の光を作り出すことができる。According to a third aspect of the present invention, a Czochralski method is used, although not shown, using a seed crystal cut out of a lithium tetraborate single crystal into a phase matching direction inclined at an angle of 66 ± 3 degrees from the c-axis. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out in the same manner as described above from a lithium tetraborate single crystal obtained by growing θm at 66 ± 3 degrees, and the wavelength conversion element is basically cut from a Nd: YAG laser in parallel or perpendicular to the cutting direction. By irradiating a laser beam of a second harmonic of the wave, light of a fourth harmonic wavelength having high coherence can be generated.
【0009】請求項4に係る発明は、図示しないが、四
ほう酸リチウム単結晶のc軸から角度が74±3度だけ
傾いた位相整合方位に切出した種結晶を用いて、チョク
ラルスキー法により光学用四ほう酸リチウム単結晶を育
成する方法である。θmを74±3度にして育成して得
られた四ほう酸リチウム単結晶から上記と同様に波長変
換素子を切出し、この波長変換素子に対して切出し方向
に平行又は垂直にNd:YAGレーザから基本波とその
4倍波のレーザ光を照射すれば、コヒーレンスの高い5
倍波の波長の光を作り出すことができる。According to a fourth aspect of the present invention, a Czochralski method is used, although not shown, using a seed crystal cut out of a lithium tetraborate single crystal into a phase matching direction inclined at an angle of 74 ± 3 degrees from the c-axis. This is a method of growing a lithium tetraborate single crystal for optics . A wavelength conversion element is cut out in the same manner as described above from a lithium tetraborate single crystal grown at θm of 74 ± 3 degrees, and the wavelength conversion element is basically cut from an Nd: YAG laser in parallel or perpendicular to the cutting direction. Irradiating the laser beam with the wave and its fourth harmonic, a high coherence 5
Light of the wavelength of the harmonic can be produced.
【0010】[0010]
【発明の実施の形態】本発明の四ほう酸リチウム単結晶
は、チョクラルスキー法により製造される。即ち、図1
に示すように、チョクラルスキー法では、四ほう酸リチ
ウム単結晶の育成装置20は四ほう酸リチウム多結晶の
融液21aが貯えられている白金るつぼ21を有する。
四ほう酸リチウムは酸化物の中では低融点であるため、
白金るつぼで育成することができる。白金るつぼ21の
周囲には断熱材22,23を介してるつぼ21内の四ほ
う酸リチウム多結晶を融解させるための抵抗加熱ヒータ
のような加熱装置24が設けられる。るつぼ21内の融
液21aの温度は熱電対29により検出される。るつぼ
21の上部には断熱壁25,26が二重に設けられてお
り、これらの断熱壁25,26を貫通して回転・引上げ
機構27が設けられる。この機構27の先端には種結晶
10が配置される。この方法では、加熱装置24により
るつぼ21内の四ほう酸リチウム多結晶が融解した後、
この融液21aに種結晶10を接触させ、回転・引上げ
機構27により、種結晶10を回転させながら引上げる
ことにより、図示するような四ほう酸リチウム単結晶2
8が育成される。Lithium tetraborate single crystal of the embodiment of the present invention will be more prepared to Czochralski method. That is, FIG.
As shown in (1), in the Czochralski method, a lithium tetraborate single crystal growing apparatus 20 has a platinum crucible 21 in which a melt 21a of lithium tetraborate polycrystal is stored.
Since lithium tetraborate has a low melting point among oxides,
It can be grown in a platinum crucible. Resistance heating heater data for the periphery of the platinum crucible 21 to melt the lithium tetraborate polycrystalline in pot 21, which via a heat insulating materials 22 and 23
Heating device 24 such as is provided. The temperature of the melt 21 a in the crucible 21 is detected by a thermocouple 29. Heat insulating walls 25 and 26 are provided in a double manner at the upper part of the crucible 21, and a rotation / pulling-up mechanism 27 is provided through the heat insulating walls 25 and 26. The seed crystal 10 is disposed at the tip of the mechanism 27. In this method, after the lithium tetraborate polycrystal in the crucible 21 is melted by the heating device 24,
The seed crystal 10 is brought into contact with the melt 21 a and pulled up while rotating the seed crystal 10 by a rotation / pulling-down mechanism 27, so that the lithium tetraborate single crystal 2
8 are raised.
【0011】[0011]
【0012】本発明の特徴ある構成は、この種結晶10
の切出し方位が四ほう酸リチウム単結晶のc軸から角度
が32±3度、40±3度、66±3度又は74±3度
だけ傾いた位相整合方位であることにある。ここで位相
整合方位θmは波長変換素子が二次高調波を発生すると
きのレーザ光と光軸(c軸)との角度である。四ほう酸
リチウム単結晶は、負の一軸結晶であるため位相整合条
件はタイプIの結晶である。従って、図2に示すように
位相整合条件としては、位相整合角度θmのみを考慮す
れば良く、c面上の回転角Φは考慮する必要がない。図
3は横軸に四ほう酸リチウム単結晶に入射するレーザ光
の波長と、縦軸にその位相整合角度を示す特性図であ
る。この図3に基づいて四ほう酸リチウム単結晶に入射
するレーザ光の波長から、その波長の位相整合角度を容
易に求めることができる。例えばNd:YAGレーザを
光源とした場合、この波長は1.06μm(1064n
m)であるので、補助線aを引き、特性曲線に当った点
pから補助線bを引けば、波長1064nmのときの位
相整合角度θmは32度と求められる。Nd:YAGレ
ーザ以外の他のレーザ光源を用いた場合にも同様に図3
に基づいてその波長から位相整合角度θmを求めること
ができる。代表的なレーザであるNd:YAGレーザの
第二高調波、第三高調波、第四高調波及び第五高調波の
各位相整合角度θmは、それぞれ32度、40度、66
度及び74度と求められる。ただし第三高調波及び第五
高調波は和周波(SFG)により得られる。[0012] characteristic configuration of the present invention, the seed crystal 1 0
Angle from the c-axis of the lithium tetraborate single crystal cut orientation of
Is a phase matching direction inclined by 32 ± 3 degrees, 40 ± 3 degrees, 66 ± 3 degrees, or 74 ± 3 degrees . Here, the phase matching direction θm is the angle between the laser beam and the optical axis (c-axis) when the wavelength conversion element generates the second harmonic. Since the lithium tetraborate single crystal is a negative uniaxial crystal, the phase matching condition is a type I crystal. Therefore, as shown in FIG. 2 , only the phase matching angle θm needs to be considered as the phase matching condition, and there is no need to consider the rotation angle Φ on the c-plane. Figure
3 is a characteristic diagram showing the wavelength of laser light incident on the lithium tetraborate single crystal on the horizontal axis and the phase matching angle on the vertical axis. From FIG. 3 , the phase matching angle of the wavelength can be easily obtained from the wavelength of the laser beam incident on the lithium tetraborate single crystal. For example, when an Nd: YAG laser is used as a light source, this wavelength is 1.06 μm (1064 n
m), if the auxiliary line a is drawn and the auxiliary line b is drawn from the point p on the characteristic curve, the phase matching angle θm at the wavelength of 1064 nm is obtained as 32 degrees. FIG. 3 also shows the case where another laser light source other than the Nd: YAG laser is used.
, The phase matching angle θm can be obtained from the wavelength. The phase matching angles θm of the second harmonic, the third harmonic, the fourth harmonic, and the fifth harmonic of an Nd: YAG laser, which is a typical laser, are 32 degrees, 40 degrees, and 66 degrees, respectively.
Degrees and 74 degrees. However, the third harmonic and the fifth harmonic are obtained by the sum frequency (SFG).
【0013】[0013]
【実施例】次に本発明の実施例を比較例とともに説明す
る。 <実施例1>所定のモル比の純度99.99%の四ほう
酸リチウム多結晶原料粉末1300gを、図1に示す直
径90mm、高さ100mmの白金るつぼ21に充填
し、加熱装置24で原料粉末を融解した後、CZ法で所
定の引上げ方位に引上げた。即ち、この例では、種結晶
10はc軸から32度でカットしたものを用いた。融液
表面と融液直上10mmの温度勾配(降温勾配)を90
℃/cmにし、それより上部の降温勾配を30℃/cm
にした。更に単結晶28の直胴部育成時には0.4mm
/時間の速度で単結晶を引上げ、直径2インチ、直胴部
の長さ65mmの四ほう酸リチウム単結晶28を育成し
た。 <実施例2>種結晶としてc軸から40度でカットした
ものを用いた以外、実施例1と同様にして、直径2イン
チ、直胴部の長さ65mmの四ほう酸リチウム単結晶を
育成した。Next, examples of the present invention will be described together with comparative examples. <Example 1> 1300 g of lithium tetraborate polycrystalline raw material powder having a predetermined molar ratio and a purity of 99.99% was charged into a platinum crucible 21 having a diameter of 90 mm and a height of 100 mm shown in FIG. Was melted and then pulled up to a predetermined pulling direction by the CZ method. That is, in this example, the seed crystal 10 cut at 32 degrees from the c-axis was used. A temperature gradient (temperature drop gradient) of 10 mm directly above the melt surface and the melt is 90
° C / cm, and the temperature gradient above it is 30 ° C / cm
I made it. Furthermore, when growing the straight body of the single crystal 28, 0.4 mm
The single crystal was pulled up at a rate of / hour, and a lithium tetraborate single crystal 28 having a diameter of 2 inches and a length of a straight body of 65 mm was grown. Example 2 A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1, except that a seed crystal cut at 40 degrees from the c-axis was used. .
【0014】[0014]
【0015】<比較評価・その1> 実施例1及び2の四ほう酸リチウム単結晶の第二次高調
波の特性を評価するために、2つの単結晶を引上げ方向
又は融液の下降方向にそれぞれ10mm×10mm×3
0mm(直方体)の同形同大に切出した後、切出し方向
に直角の互いに対向する端面を光学研磨して2つのサン
プルを得た。これらの研磨面をレーザ光の入射面及び出
射面とし、Nd:YAGレーザ又はこのレーザと四ほう
酸リチウム単結晶の組合せによって、表1に示す波長を
サンプル毎にサンプルに照射した。その結果、得られた
波長のレーザ光を表1に示す。<Comparative Evaluation Part 1> In order to evaluate the second harmonic characteristics of the lithium tetraborate single crystals of Examples 1 and 2 , two single crystals were pulled in the pulling direction or in the melt descending direction, respectively. 10mm × 10mm × 3
After cut into the same shape and size of 0 mm (cuboid), to give two samples optically polished end faces facing each other perpendicular to the cut direction. These polished surfaces were used as an incident surface and an outgoing surface of the laser beam, and the samples were irradiated with the wavelengths shown in Table 1 for each sample using a Nd: YAG laser or a combination of this laser and a lithium tetraborate single crystal. As a result, the laser light of the obtained wavelength is shown in Table 1.
【0016】[0016]
【表1】 [Table 1]
【0017】表1から明らかなように、実施例1からは
2倍波である波長532nmの緑色光が、実施例2から
は3倍波である波長355nmの紫外光がそれぞれ確認
された。As is clear from Table 1, green light having a wavelength of 532nm is twice wave from Example 1, is ultraviolet light pixels respectively confirmation wavelength 355nm is triple wave from Example 2 Was.
【0018】<比較例1>種結晶としてc軸でカットし
たものを用いた以外、実施例1と同様にして、直径2イ
ンチ、直胴部の長さ65mmの四ほう酸リチウム単結晶
を育成した。 <比較例2>種結晶として<110>方位に切出したも
のをを用いた以外、実施例1と同様にして、直径2イン
チ、直胴部の長さ65mmの四ほう酸リチウム単結晶を
育成した。 <比較例3>種結晶としてx軸でカットしたものを用い
た以外、実施例1と同様にして、直径2インチ、直胴部
の長さ65mmの四ほう酸リチウム単結晶を育成した。Comparative Example 1 A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1 except that a seed crystal cut along the c-axis was used. . <Comparative Example 2> A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1 except that a seed crystal cut in the <110> direction was used as a seed crystal. . <Comparative Example 3> A lithium tetraborate single crystal having a diameter of 2 inches and a length of a straight body of 65 mm was grown in the same manner as in Example 1 except that a seed crystal cut along the x-axis was used.
【0019】<比較評価・その2> 比較例1〜比較例3で得られた単結晶からそれぞれ位相
整合角度θm=40度、66度及び74度に合せたサン
プルを切出した。これらのサンプルのサイズはそれぞれ
実施例1及び2のサンプルと同形同大の10mm×10
mm×30mmの直方体に切出した。実施例1及び2の
単結晶から得られたサンプル数と、比較例1〜比較例3
の単結晶から得られたサンプル数を表2に示す。<Comparative Evaluation, Part 2> From the single crystals obtained in Comparative Examples 1 to 3, samples having a phase matching angle θm of 40 °, 66 °, and 74 ° were cut out. The size of these samples was 10 mm × 10 mm, which was the same shape and size as the samples of Examples 1 and 2 , respectively.
It was cut into a rectangular parallelepiped of mm × 30 mm. The number of samples obtained from the single crystals of Examples 1 and 2 , and Comparative Examples 1 to 3
Table 2 shows the number of samples obtained from the single crystal.
【0020】[0020]
【表2】 [Table 2]
【0021】表2から明らかなように、実施例1及び2
の単結晶から得られたサンプル数は、比較例1〜比較例
3の単結晶から得られたサンプル数より約1.3倍〜約
2.4倍多かった。これにより、位相整合方位で四ほう
酸リチウム単結晶を育成すると、育成した単結晶を無駄
なく使えることが判った。As is clear from Table 2, Examples 1 and 2
The number of samples obtained from the single crystal of Comparative Example 1 was about 1.3 to about 2.4 times larger than the number of samples obtained from the single crystals of Comparative Examples 1 to 3. Thus, it was found that when growing a lithium tetraborate single crystal in the phase matching orientation, the grown single crystal can be used without waste.
【0022】[0022]
【発明の効果】以上述べたように、本発明によれば、四
ほう酸リチウム単結晶のc軸から角度が32±3度、4
0±3度、66±3度又は74±3だけ傾いた位相整合
方位に切出した種結晶を用いて、チョクラルスキー法又
はブリッジマン法により光学用四ほう酸リチウム単結晶
を育成することにより、育成した単結晶インゴットから
波長変換素子のような光学材料を切出すときに単結晶イ
ンゴットを無駄なく、高い歩留りで使用することができ
る。As described above, according to the present invention, the angle from the c-axis of the lithium tetraborate single crystal is 32 ± 3 degrees,
By growing a single crystal of lithium tetraborate for optics by a Czochralski method or a Bridgman method using a seed crystal cut in a phase matching direction inclined by 0 ± 3 degrees, 66 ± 3 degrees or 74 ± 3 , When cutting an optical material such as a wavelength conversion element from a grown single crystal ingot, the single crystal ingot can be used with a high yield without waste.
【図1】本発明のチョクラルスキー法による四ほう酸リ
チウム単結晶の育成装置の構成図。FIG. 1 is a configuration diagram of an apparatus for growing a lithium tetraborate single crystal by the Czochralski method of the present invention.
【図2】結晶中の位相整合角度の定義を示す概略図。FIG. 2 is a schematic diagram showing a definition of a phase matching angle in a crystal.
【図3】四ほう酸リチウム単結晶へのレーザ光の入射波
長と位相整合角度との関係を示す図。FIG. 3 is a diagram showing a relationship between an incident wavelength of laser light on a lithium tetraborate single crystal and a phase matching angle.
10 種結晶 21a 四ほう酸リチウム融液 28 四ほう酸リチウム単結晶1 0 seed crystal 21 a lithium tetraborate melt 2 8 lithium tetraborate single crystal
フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C30B 1/00 - 35/00 CA(STN) JICSTファイル(JOIS)Continuation of the front page (58) Fields surveyed (Int. Cl. 7 , DB name) C30B 1/00-35/00 CA (STN) JICST file (JOIS)
Claims (4)
が32±3度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。1. An angle from the c-axis of a lithium tetraborate single crystal
There using the extracted seed crystal phase matching direction inclined by 32 ± 3 °, a method for growing optical lithium tetraborate single crystal by the Czochralski method.
が40±3度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。2. An angle from the c-axis of a lithium tetraborate single crystal
There is used a seed crystal cut in the phase matching direction inclined by 40 ± 3 °, a method for growing optical lithium tetraborate single crystal by the Czochralski method.
が66±3度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。3. An angle from the c-axis of the lithium tetraborate single crystal
There is used a seed crystal cut in inclined by phase matching direction 66 ± 3 °, a method for growing optical lithium tetraborate single crystal by the Czochralski method.
が74±3度だけ傾いた位相整合方位に切出した種結晶
を用いて、チョクラルスキー法により光学用四ほう酸リ
チウム単結晶を育成する方法。4. An angle from the c-axis of a lithium tetraborate single crystal
Is a method of growing a lithium tetraborate single crystal for optics by a Czochralski method using a seed crystal cut in a phase matching direction inclined by 74 ± 3 degrees.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06259997A JP3261649B2 (en) | 1997-03-17 | 1997-03-17 | Growth method of lithium tetraborate single crystal for optics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06259997A JP3261649B2 (en) | 1997-03-17 | 1997-03-17 | Growth method of lithium tetraborate single crystal for optics |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10259096A JPH10259096A (en) | 1998-09-29 |
JP3261649B2 true JP3261649B2 (en) | 2002-03-04 |
Family
ID=13204966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP06259997A Expired - Fee Related JP3261649B2 (en) | 1997-03-17 | 1997-03-17 | Growth method of lithium tetraborate single crystal for optics |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3261649B2 (en) |
-
1997
- 1997-03-17 JP JP06259997A patent/JP3261649B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH10259096A (en) | 1998-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9715160B2 (en) | Barium tetraborate compound and barium tetraborate non-linear optical crystal, and preparation method and use thereof | |
WO2012009945A1 (en) | Barium fluoroborate, nonlinear optical crystal of barium fluoroborate, the production methods and uses thereof | |
JP4061797B2 (en) | BORATE SINGLE CRYSTAL, GROWTH METHOD THEREOF, AND LASER DEVICE USING THE SAME | |
JP6649508B2 (en) | Tellurate crystal growth method and acousto-optic device | |
US6146553A (en) | Nonlinear optical crystal of compound R2 MB10 O19 and producing method and producing method and uses thereof | |
Prokofiev et al. | Growth of single-crystal photorefractive fibers of Bi12SiO20 and Bi12TiO20 by the laser-heated pedestal growth method | |
CN110396721A (en) | Fluorine boron aluminic acid cesium compound, fluorine boron aluminic acid caesium nonlinear optical crystal and its preparation method and application | |
JPH09512354A (en) | Nonlinear crystals and their use | |
CN105350082B (en) | Na2In2GeSe6Nonlinear optical crystal and its preparation method and use | |
JP3261649B2 (en) | Growth method of lithium tetraborate single crystal for optics | |
Wang et al. | Growth and properties of KBe2BO3F2 crystal | |
US20160137515A1 (en) | Li4Sr(BO3)2 Compound, Li4Sr(BO3)2 Nonlinear Optical Crystal, Preparation Method and Use Thereof | |
JP3317338B2 (en) | Wavelength conversion crystal, method of manufacturing the same, and laser device using the same | |
JP2003131278A (en) | Method for converting wavelength by using optical grade lithium tetraborate single crystal | |
CN110735184B (en) | BaHgGeSe4Nonlinear optical crystal and preparation method and application thereof | |
Dhanaraj et al. | Dendritic structures on habit faces of potassium titanyl phosphate crystals grown from flux | |
CN109656079B (en) | Application of BaHgSnS4 nonlinear optical crystal | |
JP3649207B2 (en) | Method for producing single crystal lithium tetraborate | |
JP3888886B2 (en) | BABF nonlinear optical crystal | |
CN110791812B (en) | BaHgSnSe4Nonlinear optical crystal and preparation method and application thereof | |
JP3936483B2 (en) | Nonlinear optical crystal for second harmonic generation | |
JPS6037505A (en) | Preparation of light guide made of organic crystal | |
JPH01241529A (en) | Nonlinear optical crystal | |
JP2636481B2 (en) | Growing nonlinear optical materials | |
JP3747505B2 (en) | Process for producing beta-barium borate single crystal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20011114 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071221 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081221 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081221 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091221 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091221 Year of fee payment: 8 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101221 Year of fee payment: 9 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101221 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111221 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111221 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121221 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131221 Year of fee payment: 12 |
|
LAPS | Cancellation because of no payment of annual fees |