JP3258068B2 - Method for manufacturing ferroelectric liquid crystal device - Google Patents
Method for manufacturing ferroelectric liquid crystal deviceInfo
- Publication number
- JP3258068B2 JP3258068B2 JP7008192A JP7008192A JP3258068B2 JP 3258068 B2 JP3258068 B2 JP 3258068B2 JP 7008192 A JP7008192 A JP 7008192A JP 7008192 A JP7008192 A JP 7008192A JP 3258068 B2 JP3258068 B2 JP 3258068B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- ferroelectric liquid
- smectic
- cell
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Liquid Crystal (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は液晶素子の製造方法に関
し、更に詳しくは、強誘電性液晶素子の液晶注入方法に
係わるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal device, and more particularly to a method for injecting liquid crystal into a ferroelectric liquid crystal device.
【0002】[0002]
【従来の技術】強誘電性液晶素子はメモリ−性やマイク
ロ秒単位の高速応答性を有することから大容量デイ スプ
レイやプリンタ−用の高速光シャッタ−ヘッドなどに実
用化が期待されている。ところで、強誘電性液晶素子を
実用化する場合、液晶の配向性に技術的問題点がある。2. Description of the Related Art Ferroelectric liquid crystal devices are expected to be put to practical use in large-capacity displays and high-speed optical shutter heads for printers because of their memory properties and high-speed response in the order of microseconds. When a ferroelectric liquid crystal element is put into practical use, there is a technical problem in the orientation of liquid crystal.
【0003】現在試みられている強誘電性液晶の配向方
法は、有機薄膜をラビング処理する方法と、酸化金属な
どの無機絶縁物斜方蒸着する方法とに大きく分けられ
る。一般にラビング処理による配向方法では層構造のく
い違いよる線状配向欠陥がラビング方向とその軸方向に
対してほぼ垂直な方向に無数に現れるため、黒レベルと
白レベルのコントラスト比が著しく低下する上、強誘電
性液晶の大きな特徴であるメモリ−性も有しにくい。Attempts to align ferroelectric liquid crystals at present are roughly divided into a method of rubbing an organic thin film and a method of obliquely depositing an inorganic insulator such as a metal oxide. In general, in the alignment method by the rubbing treatment, since the linear alignment defects due to the difference in the layer structure appear innumerably in the rubbing direction and the direction substantially perpendicular to the axial direction, the contrast ratio between the black level and the white level is significantly reduced. Also, it is difficult to have a memory characteristic, which is a great feature of ferroelectric liquid crystals.
【0004】これに対し、斜方蒸着による方法は前述の
ような配向欠陥の少ない配向状態が得られ、特に特開昭
62−192724号公報に示されている方法のように
一対の基板の対向面に互いに逆の傾斜のSiO斜方蒸着
膜を形成する逆傾斜配向の構成にすると、メモリ−性を
有しコントラスト比も高い液晶素子を得ることができ
る。On the other hand, the oblique deposition method can provide an alignment state with few alignment defects as described above, and in particular, a method in which a pair of substrates are opposed to each other as disclosed in JP-A-62-192724. By adopting a configuration of reverse tilt alignment in which SiO oblique deposition films having tilts opposite to each other are formed on a surface, a liquid crystal element having a memory property and a high contrast ratio can be obtained.
【0005】しかしながらSiO斜方蒸着配向膜を用い
た逆傾斜配向による強誘電性液晶素子も液晶素子が大型
化すると、均一配向が全面にわたって得られにくいこと
が判明した。例えば、表示面積が10センチ平方程度の
液晶表示素子や、長さ25センチで幅1センチの短冊状
液晶シャッタ−素子を、特開昭61−132926号公
報に記載されている、液晶素子と液晶だめを単純に加熱
して低粘度の液晶状態で注入する従来の方法では、液晶
素子の外周部や配向膜面のキズ、段差部分などに配向不
良などが起こり易く、強誘電性液晶素子の製造歩どまり
を著しく低下させる。[0005] However, it has been found that uniform orientation cannot be obtained over the entire surface of a ferroelectric liquid crystal element based on reverse tilt alignment using a SiO obliquely deposited alignment film when the size of the liquid crystal element is increased. For example, a liquid crystal display element having a display area of about 10 cm square or a strip-shaped liquid crystal shutter element having a length of 25 cm and a width of 1 cm is described in JP-A-61-132926. With the conventional method of injecting a nodule into a low-viscosity liquid crystal state simply by heating the nodule, scratches on the outer periphery of the liquid crystal element, scratches on the alignment film surface, poor alignment, etc. are likely to occur, and production of ferroelectric liquid crystal elements Reducing the yield significantly.
【0006】したがって本発明は液晶素子の均一配向性
を向上させ、実用化可能な大型強誘電性液晶素子の製造
方法を提供することを目的とする。Accordingly, it is an object of the present invention to provide a method for manufacturing a large-sized ferroelectric liquid crystal element which can improve the uniform alignment of the liquid crystal element and can be put to practical use.
【0007】[0007]
【課題を解決するための手段】本発明は電極を有する一
対の基板の相対向する面に、それぞれ配向膜を形成した
セルに、液晶相転移系列がアイソトロピック−コレステ
リック−スメクチックA−カイラルスメクチックC相で
ある強誘電性液晶をセルに注入する方法であって、セル
と強誘電性液晶とを共にコレステリック−スメクチック
A相転移温度に、一定に加温して、強誘電性液晶をセル
に注入することを特徴としている。According to the present invention, an alignment film is formed on each of opposing surfaces of a pair of substrates having electrodes .
In the cell, the liquid crystal phase transition series is an isotropic-cholesteric-smectic A-chiral smectic C phase .
A method of injecting a certain ferroelectric liquid crystal cell, the cell
Cholesteric smectic and ferroelectric liquid crystal
The cell is heated at a constant temperature to the A phase transition temperature,
It is characterized by injecting into.
【0008】[0008]
【作用】 以下本発明の作用を図面にもとずいて説明す
る。図4には温度によって変化する液晶の相転移系列が
アイソトロピック−コレステリック−スメクチックA−
カイラルスメクチックC相である液晶の各相状態が示さ
れており、斜方蒸着配向膜42が付着したガラス基板4
1に挟まれた液晶分子43は、アイソトロピック相状態
(a)ではランダム状態を示し、コレステリック相状態
(b)では上下ガラス基板間でねじれた配列を示し、温
度増加と共にねじれのピッチは減少する。また、スメク
チックA相状態(c)およびカイラルスメクチックC相
状態(d)では、斜方蒸着配向膜により形成された表面
パタ−ンに沿ってほぼ一様に配列している。The operation of the present invention will be described below with reference to the drawings. FIG. 4 shows that the phase transition series of the liquid crystal which changes with temperature is isotropic-cholesteric-smectic A-.
Each phase state of the liquid crystal, which is a chiral smectic C phase, is shown.
The liquid crystal molecules 43 sandwiched between 1 show a random state in the isotropic phase state (a), show a twisted arrangement between the upper and lower glass substrates in the cholesteric phase state (b), and decrease the twist pitch as the temperature increases. . In the smectic A phase state (c) and the chiral smectic C phase state (d), they are arranged almost uniformly along the surface pattern formed by the obliquely deposited alignment film.
【0009】したがって、液晶分子が配向膜と初めて接
し吸着される液晶注入時に、配向膜の表面パタ−ンに沿
った方向と液晶分子の配列方向とがほぼ一致するスメク
チックA相やカイラルスメクチックC相状態の温度に液
晶が加温されているのが理想的であり、液晶配列状態の
欠陥率を最小にすることが可能である。Therefore, at the time of liquid crystal injection in which the liquid crystal molecules come into contact with the alignment film for the first time and are adsorbed, the smectic A phase and the chiral smectic C phase in which the direction along the surface pattern of the alignment film and the alignment direction of the liquid crystal molecules almost coincide. Ideally, the liquid crystal is heated to the state temperature, and the defect rate in the liquid crystal alignment state can be minimized.
【0010】一方、大型液晶素子を素子全体に短時間で
注入するためには、液晶の粘性は低いほうが望ましい
が、スメクチックA相やカイラルスメクチックC相状態
は液晶分子が層状態を形成して配列するため、粘性が千
センチポイズ以上と高く注入不良を起こし易い。ところ
で、液晶の粘性は温度の上昇と共に減少するが、コレス
テリック−スメクチックA相転移温度近傍では数十セン
チポイズへと急激な変化を伴って低下する上、コレステ
リックピッチが無限大となるため液晶の配列は斜方蒸着
配向膜の表面パタ−ンとほぼ一致する一方向に揃い、液
晶相転移系列がアイソトロピック−コレステリック−ス
メクチックA−カイラルスメクチックC相である強誘電
性液晶の注入温度としては最適といえる。On the other hand, in order to inject a large liquid crystal element into the whole element in a short time, it is desirable that the liquid crystal has low viscosity. However, in the smectic A phase and the chiral smectic C phase, the liquid crystal molecules form a layer state and are arranged. Therefore, the viscosity is as high as 1,000 centipoise or more, and poor injection is likely to occur. By the way, the viscosity of the liquid crystal decreases with an increase in temperature, but decreases with a rapid change to several tens of centipoise in the vicinity of the cholesteric-smectic A phase transition temperature, and the cholesteric pitch becomes infinite because the cholesteric pitch becomes infinite. It can be said that it is optimal as the injection temperature of the ferroelectric liquid crystal in which the liquid crystal phase transition sequence is an isotropic-cholesteric-smectic-A-chiral smectic-C phase, which is aligned in one direction almost coincident with the surface pattern of the oblique deposition alignment film. .
【0011】[0011]
【実施例】 以下本発明の実施例を図面にもとずいて説
明する。図1は本発明の実施例を表す強誘電性液晶素子
の注入方法を表す模式図であり、液晶注入前のセル11
はヒ−タ−板13とアルミ製の熱伝導板12に挟まれて
コレステリック−スメクチックA相転移温度に加温され
ており、また、液晶だめ15中の液晶材料14もヒ−タ
−板16によりコレステリック−スメクチックA相転移
温度に一定に加温されており、排気口17を真空ポンプ
に接続しベルジャ−内を減圧していく。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing a method of injecting a ferroelectric liquid crystal element according to an embodiment of the present invention, and shows a cell 11 before liquid crystal injection.
Is heated to a cholesteric-smectic A phase transition temperature between a heater plate 13 and a heat conducting plate 12 made of aluminum, and the liquid crystal material 14 in the liquid crystal reservoir 15 is also heated by the heater plate 16. Is heated to a constant cholesteric-smectic A phase transition temperature, and the exhaust port 17 is connected to a vacuum pump to reduce the pressure inside the bell jar.
【0012】ベルジャ−18内が十分に減圧してほぼ真
空状態になったところで、ヒ−タ−板16の位置を上昇
させセル11の液晶注入口を液晶に浸し、その後ベルジ
ャ−内を常圧に戻し三時間程度かけて液晶材料15を素
子内に注入する。その間、セル11と液晶材料15はコ
レステリック−スメクチックA相転移温度の近傍に一定
に保たれている。When the inside of the bell jar 18 is sufficiently decompressed to a substantially vacuum state, the position of the heater plate 16 is raised and the liquid crystal injection port of the cell 11 is immersed in the liquid crystal. And the liquid crystal material 15 is injected into the device over about three hours. During that time, the cell 11 and the liquid crystal material 15 are kept constant near the cholesteric-smectic A phase transition temperature.
【0013】図2は実施例に用いたセルの模式断面図で
あり、1000オングストローム厚の酸化インジウム透
明電極23と800オングストローム厚のSiO斜方蒸
着膜24が付着した2枚の上下ガラス基板21、22が
2.5μの間隙を保って、エポキシ樹脂シ−ル25によ
って固着されており、26の方向から液晶材料を注入し
て強誘電性液晶素子を作製する。FIG. 2 is a schematic cross-sectional view of the cell used in the embodiment. The upper and lower glass substrates 21 to which a 1000 Å thick indium oxide transparent electrode 23 and an 800 Å thick SiO oblique deposition film 24 are attached. 22 is fixed by an epoxy resin seal 25 with a gap of 2.5 .mu.m, and a liquid crystal material is injected from the direction of 26 to produce a ferroelectric liquid crystal element.
【0014】図3は前述のセルの模式平面図であり、プ
リンタ−用高速シャッタ−ヘッド形状にあわせてエポキ
シ樹脂シ−ル35は幅1センチ、長さ25センチの短冊
形状となっている。FIG. 3 is a schematic plan view of the above-mentioned cell. The epoxy resin seal 35 has a strip shape of 1 cm in width and 25 cm in length according to the shape of a high-speed shutter for a printer.
【0015】以上述べてきたセルを多数個作製し、液晶
相転移系列がアイソトロピック−コレステリック−スメ
クチックA−カイラルスメクチックC相であるチッソ製
強誘電性液晶CS−1014、CZ−C100、CZ−
C101、ヘキスト製液晶CHC−005、CHC−0
06、CHC−007の各液晶材料を本発明のコレステ
リック−スメクチックA相転移温度近傍でセルに注入し
強誘電性液晶素子を作製し、良品注入配向歩留まりを検
査したところ上述のすべての材料で90%以上の高い良
品率が得られた。なお、比較のために本発明以外の注入
温度で作製した強誘電性液晶素子の良品率も合わせて表
1に示す。表1から本発明の注入温度以外では60%〜
80%程度の良品率に留まってしまい、本発明の方法が
極めて優れていることが判る。A large number of the cells described above were manufactured, and the ferroelectric liquid crystal CS-1014, CZ-C100, and CZ-C manufactured by Chisso, whose liquid crystal phase transition series was an isotropic-cholesteric-smectic A-chiral smectic C phase.
C101, Hoechst liquid crystal CHC-005, CHC-0
06 and CHC-007 were injected into the cell near the cholesteric-smectic A phase transition temperature of the present invention to produce a ferroelectric liquid crystal device. % Or more. For comparison, Table 1 also shows the yield rate of ferroelectric liquid crystal devices manufactured at injection temperatures other than the present invention. From Table 1, 60% ~
The yield was only about 80%, indicating that the method of the present invention was extremely excellent.
【0016】 [0016]
【0017】[0017]
【発明の効果】以上の実施例で述べたように、本発明に
よれば液晶分子が配向膜と初めて接し吸着される液晶注
入時に、配向膜の表面パタ−ンに沿った方向と液晶分子
の配列方向とがほぼ一致し、かつ、十分な低粘度の液晶
相状態であるため、広い領域にわたって欠陥のない均一
配向が可能となり、多量の強誘電性液晶素子を高い製造
歩どまりで得ることが可能で、実用化可能な大型強誘電
性液晶素子を提供することができる。As described in the above embodiments, according to the present invention, the direction along the surface pattern of the alignment film and the orientation of the liquid crystal molecule during the injection of the liquid crystal in which the liquid crystal molecule comes into contact with the alignment film for the first time are adsorbed. Since the alignment direction is almost the same, and the liquid crystal phase has a sufficiently low viscosity, it is possible to perform defect-free uniform alignment over a wide area, and to obtain a large number of ferroelectric liquid crystal elements at a high production yield. It is possible to provide a large-sized ferroelectric liquid crystal element which is possible and practical.
【図1】本発明の液晶の注入方法の様子示す模式図であ
る。FIG. 1 is a schematic view showing a liquid crystal injection method of the present invention.
【図2】本発明の実施例に用いたセルの模式断面図であ
る。FIG. 2 is a schematic sectional view of a cell used in an example of the present invention.
【図3】本発明の実施例に用いたセルの模式平面図であ
る。FIG. 3 is a schematic plan view of a cell used in an example of the present invention.
【図4】液晶相の状態を示す模式図である。FIG. 4 is a schematic diagram showing a state of a liquid crystal phase.
11 セル 12 熱伝導板 13 ヒ−タ−板 14 液晶材料 15 液晶だめ 16 ヒ−タ−板 17 排気口 18 ベルジャ− 21 下ガラス基板 22 上ガラス基板 23 透明電極 24 斜方蒸着配向膜 25 エポキシ樹脂シ−ル 26 注入方向 31 下ガラス基板 32 上ガラス基板 35 エポキシ樹脂シ−ル 36 注入方向 41 ガラス基板 42 斜方蒸着配向膜 43 液晶分子 DESCRIPTION OF SYMBOLS 11 Cell 12 Heat conductive plate 13 Heater plate 14 Liquid crystal material 15 Liquid crystal reservoir 16 Heater plate 17 Exhaust port 18 Bell jar 21 Lower glass substrate 22 Upper glass substrate 23 Transparent electrode 24 Oblique deposition alignment film 25 Epoxy resin Seal 26 Injection direction 31 Lower glass substrate 32 Upper glass substrate 35 Epoxy resin seal 36 Injection direction 41 Glass substrate 42 Oblique deposition alignment film 43 Liquid crystal molecules
Claims (1)
に、基板面に対し傾斜して形成した配向膜を有するセル
に、液晶相転移系列がアイソトロピック−コレステリッ
ク−スメクチックA−カイラルスメクチックC相である
強誘電性液晶を注入する強誘電性液晶素子の製造方法に
おいて、前記セルと強誘電性液晶とを共に、コレステリ
ック−スメクチックA相転移温度に、一定に加温して、
前記セルに前記強誘電性液晶を配向膜の傾斜に沿った方
向より注入することを特徴とする強誘電性液晶素子の製
造方法。1. A cell having an alignment film formed on opposite surfaces of a pair of substrates having electrodes and inclined with respect to the substrate surface.
In addition, the liquid crystal phase transition series is isotropic-cholesteric.
In a method of manufacturing a ferroelectric liquid crystal device in which a ferroelectric liquid crystal which is a cubic smectic A-chiral smectic C phase is injected , both the cell and the ferroelectric liquid crystal are cholesteric.
By heating to a constant temperature of the smuxic smectic A phase transition temperature,
Method for producing a ferroelectric liquid crystal device, characterized in that the injected from the direction along the inclination of the ferroelectric liquid crystal alignment film in the cell.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7008192A JP3258068B2 (en) | 1992-02-21 | 1992-02-21 | Method for manufacturing ferroelectric liquid crystal device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7008192A JP3258068B2 (en) | 1992-02-21 | 1992-02-21 | Method for manufacturing ferroelectric liquid crystal device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05232487A JPH05232487A (en) | 1993-09-10 |
JP3258068B2 true JP3258068B2 (en) | 2002-02-18 |
Family
ID=13421239
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7008192A Expired - Fee Related JP3258068B2 (en) | 1992-02-21 | 1992-02-21 | Method for manufacturing ferroelectric liquid crystal device |
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Country | Link |
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JP (1) | JP3258068B2 (en) |
Families Citing this family (1)
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KR100642489B1 (en) * | 2000-07-06 | 2006-11-02 | 엘지.필립스 엘시디 주식회사 | Apparatus and method for injecting liquid crystal of lcd device |
-
1992
- 1992-02-21 JP JP7008192A patent/JP3258068B2/en not_active Expired - Fee Related
Also Published As
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JPH05232487A (en) | 1993-09-10 |
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