JP3256367B2 - 樹脂被覆絶縁ボンディングワイヤ - Google Patents

樹脂被覆絶縁ボンディングワイヤ

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Publication number
JP3256367B2
JP3256367B2 JP04005994A JP4005994A JP3256367B2 JP 3256367 B2 JP3256367 B2 JP 3256367B2 JP 04005994 A JP04005994 A JP 04005994A JP 4005994 A JP4005994 A JP 4005994A JP 3256367 B2 JP3256367 B2 JP 3256367B2
Authority
JP
Japan
Prior art keywords
resin
bonding
bonding wire
coated
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04005994A
Other languages
English (en)
Other versions
JPH07249649A (ja
Inventor
裕之 近藤
紳也 成木
法生 新田
宏平 巽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP04005994A priority Critical patent/JP3256367B2/ja
Priority to US08/398,776 priority patent/US5639558A/en
Priority to KR1019950004758A priority patent/KR0152578B1/ko
Publication of JPH07249649A publication Critical patent/JPH07249649A/ja
Application granted granted Critical
Publication of JP3256367B2 publication Critical patent/JP3256367B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H—ELECTRICITY
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/42—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes polyesters; polyethers; polyacetals
    • H01B3/421—Polyesters
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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  • Chemical & Material Sciences (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Insulated Conductors (AREA)

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体チップと外部設
備をつなぐリードとを結線するボンディングワイヤ、特
に樹脂被覆した絶縁ボンディングワイヤに関するもので
ある。
【０００２】
【従来の技術】半導体チップ上の電極パッドと外部出力
端子であるリードとは、ボンディングワイヤで連結され
る。ボンディングワイヤは、通常Ａｕ，Ｃｕ，Ａｌ等の
金属細線が用いられ、あるループ高さを形成するよう電
極パッドとリードを連結するが、電極パッドに熱圧着さ
れた部分から引き出されるためしばしばループにたわみ
を生じ、半導体チップと接触しショートが起こることが
ある。特に近年、集積回路の大規模化にともなって、結
線も多ピン構造になり、そのため電極パッドとリード接
合部との距離が大きくなる傾向にあり、これに伴いワイ
ヤスパンが長尺となって、ループが横方向に流れるカー
ル現象が起き易すくなる。従って、隣接するワイヤ同志
のショートの確率も高くなってくる。
【０００３】このようなボンディングワイヤと半導体チ
ップまたはボンディングワイヤ同志の接触によるショー
トの発生を防止する目的で特開昭６１−１９４７３号公
報にあるように耐熱性ポリウレタン樹脂を被覆した絶縁
ボンディングワイヤや、特開昭６２−１３９２１７号公
報にあるようにポリイミド樹脂を被覆した絶縁ボンディ
ングワイヤが開示されている。
【０００４】しかしながら、従来の絶縁ボンディングワ
イヤは、使用に際して次のような問題があった。ボンデ
ィングワイヤの大部分は、ボール・ボンディング法と呼
ばれる方法でボンディングされるが、この方法では、樹
脂被覆ワイヤを半導体チップ表面の電極への接合に先立
ち、該ワイヤ先端をアーク放電により溶融しボールを形
成する。ボール成形時に樹脂は燃焼或いは熱分解等によ
り除去されるが、この時残留物が多い樹脂を用いた場合
には、ボール上にこの残留物が付着し、良好な接合が図
れない。
【０００５】さらに、ボンディング時および樹脂モール
ド時の被膜損傷による絶縁不良が生じるという問題があ
る。すなわち、ボンディング時のクランパやキャピラリ
との摩擦、或いはすでに形成されたワイヤループとの衝
突による被膜の損傷、および樹脂モールド時の熱や機械
的ストレスによる被膜の劣化、損傷が絶縁不良の原因と
なっていた。
【０００６】
【発明が解決しようとする課題】本発明は、前記したよ
うな従来の問題点を解決し、ボンディング性が良好であ
り、かつ、ボンディング時の被膜損傷が無く、また、樹
脂モールド工程においてワイヤ同志が接触しても優れた
絶縁性を有する絶縁ボンディングワイヤを提供すること
を目的とする。
【０００７】
【課題を解決するための手段】上記目的を達成するため
に本発明は、大気雰囲気中で１１００℃の温度における
熱減量が８５％以上であり、かつ、１８０℃の温度にお
ける引張り強さが３００kgf/cm2 以上であり、さらに、
ガラス転移点が２００℃以上であるポリアリレート樹脂
あるいはポリパラバン酸樹脂を被覆したことを特徴とす
る樹脂被覆絶縁ボンディングワイヤである。また、本発
明における上記特性を満たす被覆樹脂として、上記ポリ
アリレート樹脂は下記（１）乃至（３）式のいずれかの
構造を有するものであることを特徴とする。
【式１】 また、上記ポリパラバン酸樹脂は下記（４）式の構造を
有するものであることを特徴とする。
【式２】
【０００８】
【作用】本発明は熱減量が大気雰囲気中１１００℃で８
５％以上になる樹脂を用いることにより、ボンディング
ワイヤが半導体チップ上の電極パッドとの接合に支障な
いボールアップ性を有し、かつ、１８０℃における引張
り強さが３００kgf/cm2以上の機械的強度を有するもの
であればボンディング時やモールド時の接触による被膜
損傷も生じない。
【０００９】熱減量は熱天秤で樹脂サンプルを１０℃/m
inの昇温速度で加熱しながら重量減少を測定する方法を
採用するのであるが、ボンディングワイヤのボール形成
温度で十分な、すなわち少なくとも被覆樹脂の８５％が
燃焼或いは熱分解等によりボール表面から除去される必
要がある。ボンディングワイヤとして例えば金（Ａｕ）
細線を用いた場合に、その融点は１１００℃でありこの
温度からボールが成形され、従って、この温度で被覆樹
脂の８５％以上の熱減量があればボール接合に対する影
響はなく、ボンディング性は損なわれない。さらに、１
２００℃において熱減量が９５％以上になる樹脂を選べ
ば一層好ましい。
【００１０】一方、ボンディング時のキャピラリーやク
ランプとの摩擦、カール現象によるループ間の接触、ク
ロスボンディングの場合に起こるワイヤタッチ等々によ
りボンディング工程や樹脂モールド工程で起きる被膜損
傷を防ぐためには、少なくとも樹脂モールド実装温度
（１８０℃近辺）においてそれに耐える機械的強度を必
要とする。本発明者らは種々実験の結果、１８０℃を基
準にして引張り強さ３００kgf/cm2 以上の機械的強度を
有する樹脂であれば被膜損傷を起こすことがないことを
確認した。特に、この種の樹脂はガラス転移点を境に急
激に強度が低下するので、このガラス転移点が２００℃
以上、好ましくは２５０℃以上であることが望ましく、
これを基準にすることにより上記機械的強度を有する樹
脂を選ぶことができる。
【００１１】本発明の対象となる被覆樹脂としては、ポ
リパラバン酸系樹脂、或いはポリアリレート系樹脂が好
ましく、上記した諸特性を有するものとして下記樹脂の
中から少なくも一種を選択するのが特に好ましい。すな
わち、ポリパラバン酸系樹脂の
【化１】 のうち、該化学式（４）におけるＲが、例えば
【化２】 であるようなポリパラバン酸系樹脂、ポリアリレート系
樹脂の
【化３】 のうち、該化学式（５）における
【化４】 の部分が、例えば
【化５】 または、全構造式が
【化６】 であるようなポリアリレート系樹脂が選択される。
【００１２】しかし、本発明の使用する樹脂はこれに限
定されるものでなく、例えば、下記式で示されるポリサ
ルフォン
【化７】 下記式で示される芳香族ポリエーテルエーテルケトン
【化８】 など、およびこれらの樹脂のポリマーアロイであっても
よく、この他、熱減量と１８０℃での強度が上記の特性
を満たすものであれば適用可能である。なお、本発明の
おける樹脂の被覆厚さは特に限定するものでないが、
０．０５〜２μｍ程度となるのがよい。
【００１３】
【実施例】表１に示す各種の樹脂を、それぞれ直径３０
μｍのＡｕ細線に０．５μｍ厚みに被覆した絶縁ボンデ
ィングワイヤを作製し、ボンディング性試験と絶縁性試
験を行った。本発明例として、ポリアリレート樹脂Ｂ、
ポリアレート樹脂Ｃ（上記〔化６〕式）、ポリパラバン
酸樹脂（上記〔化５〕の（ａ）式）を用い、比較例とし
て、ポリカーボネート樹脂、下記〔化９〕に示すポリア
リレート樹脂Ａ
【化９】 およびポリイミド樹脂Ａ、ポリイミド樹脂Ｂ、ポリアミ
ド・イミドを同様に被覆したものを作製し、同様の試験
を行った。各被覆樹脂の熱減量とガラス転移点を表１に
併記すると共に、引張り強度の温度変化を図１に示し
た。
【００１４】ボンディング性試験では、新川製ワイヤボ
ンディング装置ＵＴＣ５０を使用した。６０００ワイヤ
以上の連続ボンディングでき、かつ第一ボンドのシェア
ーテストで５０ｇ以上を○とした。ボール径はいずれも
７５mmφとした。絶縁性試験では、図２に示すようにチ
ップ上の電極パッド１、２とリード３、４を第一ボンデ
ィングワイヤ５のループのループ高さを高めに張り、こ
れと交差する第二ボンディングワイヤ６のループを第一
のループ高さより低めに設定することりにより、確実な
ワイヤ間の接触を図った。評価方法としては、ボンディ
ング、モールド後、ユニット毎に切り離し、リード端子
間の電気リークテストを行った。
【００１５】結果は、表１にみられるように、本発明に
よる絶縁ボンディングワイヤは、ボンディング性が良好
で、ショートの発生もなく、かつ樹脂強度（１８０℃に
置ける引張り強さ）優れている。これに対し、比較例の
ポリカーポネートやポリアリレート樹脂Ａは、ボンディ
ング性は良いが、図１にみられるように高温における強
度が弱いため被膜損傷が起きショートの発生がある。ま
た、ポリイミドの例では、ボンディング時ボール上に残
留物があるためボンディング性が劣っている。
【００１６】
【表１】
【００１７】
【発明の効果】以上のように本発明では被覆する樹脂を
特定することにより、ボンディング性が良好であり、か
つ、ボンディング時の被膜損傷が無く、また、樹脂モー
ルド工程においてワイヤ同志が衝突接触してもショート
が無い優れた絶縁性を有する絶縁ボンディングワイヤを
提供でき、特に大規模集積回路やチップ中央にブスバー
を有するリード・オン・チップ型などの特殊な半導体装
置に有利に適用でき、その工業的効果は極めて大きい。
【図面の簡単な説明】
【図１】各樹脂における引張り強さの温度依存性を示す
図。
【図２】絶縁試験方法を示す平面図。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 新田 法生 神奈川県川崎市中原区井田1618番地 新 日本製鐵株式会社 先端技術研究所内 (72)発明者 巽 宏平 神奈川県川崎市中原区井田1618番地 新 日本製鐵株式会社 先端技術研究所内 (56)参考文献 特開 平２−249245（ＪＰ，Ａ)

Claims (4)

    (57)【特許請求の範囲】
  1. 【請求項１】 大気雰囲気中で１１００℃の温度におけ
    る熱減量が８５％以上であり、かつ、１８０℃の温度に
    おける引張り強さが３００kgf/cm2 以上であり、さら
    に、ガラス転移点が２００℃以上であるポリアリレート
    樹脂を被覆したことを特徴とする樹脂被覆絶縁ボンディ
    ングワイヤ。
  2. 【請求項２】 ポリアリレート樹脂が下記（１）乃至
    （３）式のいずれかの構造を有するものであることを特
    徴とする請求項１記載の樹脂被覆絶縁ボンディングワイ
    ヤ。 【式１】
  3. 【請求項３】 大気雰囲気中で１１００℃の温度におけ
    る熱減量が８５％以上であり、かつ、１８０℃の温度に
    おける引張り強さが３００kgf/cm2 以上であり、さら
    に、ガラス転移点が２００℃以上であるポリパラバン酸
    樹脂を被覆したことを特徴とする樹脂被覆絶縁ボンディ
    ングワイヤ。
  4. 【請求項４】 ポリパラバン酸樹脂が下記（４）式の構
    造を有するものであることを特徴とする請求項３記載の
    樹脂被覆絶縁ボンディングワイヤ。 【式２】
JP04005994A 1994-03-10 1994-03-10 樹脂被覆絶縁ボンディングワイヤ Expired - Fee Related JP3256367B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP04005994A JP3256367B2 (ja) 1994-03-10 1994-03-10 樹脂被覆絶縁ボンディングワイヤ
US08/398,776 US5639558A (en) 1994-03-10 1995-03-06 Insulating resin-coated bonding wire
KR1019950004758A KR0152578B1 (ko) 1994-03-10 1995-03-09 절연성 수지로 코팅된 결합선

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04005994A JP3256367B2 (ja) 1994-03-10 1994-03-10 樹脂被覆絶縁ボンディングワイヤ

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JPH07249649A JPH07249649A (ja) 1995-09-26
JP3256367B2 true JP3256367B2 (ja) 2002-02-12

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Country Link
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US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US7200930B2 (en) * 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US6046075A (en) * 1997-12-23 2000-04-04 Vlsi Technology, Inc. Oxide wire bond insulation in semiconductor assemblies
US6033937A (en) * 1997-12-23 2000-03-07 Vlsi Technology, Inc. Si O2 wire bond insulation in semiconductor assemblies
US6177726B1 (en) * 1999-02-11 2001-01-23 Philips Electronics North America Corporation SiO2 wire bond insulation in semiconductor assemblies
US20020113322A1 (en) * 2000-06-12 2002-08-22 Shinichi Terashima Semiconductor device and method to produce the same
DE10129006B4 (de) * 2001-06-15 2009-07-30 Conti Temic Microelectronic Gmbh Elektronische Baugruppe
US7517790B2 (en) * 2002-10-31 2009-04-14 International Business Machines Corporation Method and structure to enhance temperature/humidity/bias performance of semiconductor devices by surface modification
DE102005026241B4 (de) * 2005-06-07 2015-02-26 Epcos Ag Thermistor mit isolierten, lötbaren Anschlussdrähten
WO2007129832A1 (en) * 2006-05-04 2007-11-15 Lg Chem, Ltd. Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same

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JPS6119473A (ja) * 1984-07-06 1986-01-28 Ueda Seiyu Kk コンニヤクマンナンを主原料とする飲料
JPS62139217A (ja) * 1985-12-12 1987-06-22 株式会社日鉄マイクロメタル 樹脂被覆ボンデイングワイヤの製造方法
KR940008555B1 (ko) * 1989-03-28 1994-09-24 신닛뽕세이데쓰 가부시끼가이샤 수지 피복 본딩 와이어, 이의 제법 및 반도체 장치
JPH0671022B2 (ja) * 1990-03-23 1994-09-07 新日本製鐵株式会社 樹脂被覆ボンディング細線
US5337941A (en) * 1993-03-31 1994-08-16 The Furukawa Electric Co., Ltd. Magnet wire having a high heat resistance and a method of removing insulating film covering magnet wire

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JPH07249649A (ja) 1995-09-26
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US5639558A (en) 1997-06-17

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