JP3244620B2 - Scanning electron microscope - Google Patents
Scanning electron microscopeInfo
- Publication number
- JP3244620B2 JP3244620B2 JP20594095A JP20594095A JP3244620B2 JP 3244620 B2 JP3244620 B2 JP 3244620B2 JP 20594095 A JP20594095 A JP 20594095A JP 20594095 A JP20594095 A JP 20594095A JP 3244620 B2 JP3244620 B2 JP 3244620B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- objective lens
- electron
- sample
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、走査電子顕微鏡の
電子ビーム光軸上に光学顕微鏡の対物レンズ部を組み込
み、光学像の観察を行うことができる走査電子顕微鏡に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning electron microscope capable of observing an optical image by incorporating an objective lens section of an optical microscope on an optical axis of an electron beam of the scanning electron microscope.
【０００２】[0002]
【従来の技術】試料を事前に光学顕微鏡で観察し、所望
の試料領域を走査電子顕微鏡で観察することが行われて
いる。この場合、第１の方式では、光学顕微鏡カラムと
走査電子顕微鏡カラムとを平行に配置し、光学顕微鏡の
試料室と走査電子顕微鏡の試料室との間で試料を移送
し、それぞれの顕微鏡で光学像と走査電子顕微鏡像とを
得るようにしている。2. Description of the Related Art A sample is observed in advance by an optical microscope, and a desired sample area is observed by a scanning electron microscope. In this case, in the first method, the optical microscope column and the scanning electron microscope column are arranged in parallel, and the sample is transferred between the sample chamber of the optical microscope and the sample chamber of the scanning electron microscope. An image and a scanning electron microscope image are obtained.
【０００３】また、第２の方式では、走査電子顕微鏡の
光軸上の磁界型対物レンズの上部に光学顕微鏡の対物レ
ンズ部を配置するようにしている。この場合、試料の同
一部分を試料の移送動作なしに走査電子顕微鏡と光学顕
微鏡とで同時に観察することができる。なお、この方式
では、２次電子検出器は、磁界型対物レンズと光学顕微
鏡対物レンズ部との間の空間に配置される。In the second method, an objective lens section of an optical microscope is arranged above a magnetic field type objective lens on the optical axis of a scanning electron microscope. In this case, the same portion of the sample can be observed simultaneously with the scanning electron microscope and the optical microscope without the operation of transferring the sample. In this method, the secondary electron detector is arranged in a space between the magnetic field type objective lens and the optical microscope objective lens unit.
【０００４】[0004]
【発明が解決しようとする課題】上記第１の方式では、
光学顕微鏡像と走査電子顕微鏡像の観察のためには、試
料を移送するステップが必要であり、同時に両方の像を
比較観察できないばかりか、試料の同一箇所を２種の顕
微鏡で観察する際に、精密な試料の位置合わせ動作が必
要となる。In the above first method,
In order to observe the optical microscope image and the scanning electron microscope image, a step of transporting the sample is required. Not only cannot both images be compared and observed at the same time, but also when observing the same portion of the sample with two types of microscopes. Therefore, a precise sample positioning operation is required.
【０００５】上記第２の方式では、試料の移送動作が不
必要となる利点を有しているが、２次電子検出器を磁界
型対物レンズと光学顕微鏡対物レンズ部との間の狭い空
間に配置することから、２次電子の検出効率が悪いとい
う欠点を有している。The second method has an advantage that the transfer operation of the sample is unnecessary, but the secondary electron detector is disposed in a narrow space between the magnetic field type objective lens and the optical microscope objective lens unit. The arrangement has a disadvantage that the detection efficiency of secondary electrons is poor.
【０００６】本発明は、このような点に鑑みてなされた
もので、その目的は、走査電子顕微鏡の光軸上に光学顕
微鏡対物レンズ部を配置する構造で２次電子の検出効率
を著しく向上させることができる走査電子顕微鏡を実現
するにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to remarkably improve the efficiency of detecting secondary electrons by using a structure in which an objective lens section of an optical microscope is arranged on the optical axis of a scanning electron microscope. There is a need to realize a scanning electron microscope.
【０００７】[0007]
【課題を解決するための手段】請求項１の発明に基づく
走査電子顕微鏡は、電子ビーム発生源と、電子ビーム発
生源から発生し加速された電子ビームを試料上に細く集
束するための磁界型対物レンズと、試料上で電子ビーム
の走査を行うための電子ビーム偏向手段と、磁界型対物
レンズの上部の電子ビーム光軸から離れた位置に設けら
れた２次電子検出器と、電子ビーム光軸上に光を導入す
るための電子ビーム通過孔を有した光学ミラーと、磁界
型対物レンズに接近して設けられ、中心に電子ビーム通
過開口を有した光学顕微鏡対物レンズ部と、光学顕微鏡
対物レンズ部のレンズを囲むように設けられた導電体
と、導電体に試料電位に対して正の電位を印加する電源
とより構成される。According to a first aspect of the present invention, there is provided a scanning electron microscope, comprising: an electron beam generating source; and a magnetic field type for narrowly focusing an accelerated electron beam generated from the electron beam generating source on a sample. An objective lens, an electron beam deflecting means for scanning the electron beam on the sample, a secondary electron detector provided at a position above the magnetic field type objective lens away from the electron beam optical axis, and an electron beam light An optical mirror having an electron beam passage hole for introducing light on an axis, an optical microscope objective lens portion provided close to the magnetic field type objective lens and having an electron beam passage opening at the center, and an optical microscope objective It comprises a conductor provided so as to surround the lens of the lens portion, and a power supply for applying a positive potential to the conductor with respect to the sample potential.
【０００８】請求項２の発明に基づく走査電子顕微鏡
は、電子ビーム発生源と、電子ビーム発生源から発生し
加速された電子ビームを試料上に細く集束するための磁
界型対物レンズと、試料上で電子ビームの走査を行うた
めの電子ビーム偏向手段と、磁界型対物レンズの上部の
電子ビーム光軸から離れた位置に設けられた２次電子検
出器と、電子ビーム光軸上に光を導入するための電子ビ
ーム通過孔を有した光学ミラーと、磁界型対物レンズに
接近して設けられ、中心に電子ビーム通過開口を有した
光学顕微鏡対物レンズ部と、光学顕微鏡対物レンズ部の
レンズを囲むように設けられた導電体と、光学顕微鏡対
物レンズ部の中心の電子ビーム通過開口に電子ビーム光
軸に沿って設けられた導電性パイプと、導電体と導電性
パイプに試料電位に対して正の電位を印加する電源とよ
り構成される。According to a second aspect of the present invention, there is provided a scanning electron microscope comprising: an electron beam source; a magnetic field type objective lens for narrowly focusing an electron beam generated and accelerated from the electron beam source on the sample; An electron beam deflecting means for scanning an electron beam with a secondary electron detector provided above the magnetic field type objective lens at a position away from the electron beam optical axis, and introducing light onto the electron beam optical axis An optical mirror having an electron beam passage hole for carrying out, an optical microscope objective lens portion provided close to a magnetic field type objective lens and having an electron beam passage opening in the center, and a lens of the optical microscope objective lens portion And a conductive pipe provided along the electron beam optical axis at the electron beam passage opening at the center of the objective lens section of the optical microscope, and a conductor and the conductive pipe are connected to the sample potential. More constructed a power source for applying a positive potential to.
【０００９】請求項３の発明に基づく走査電子顕微鏡
は、電子ビーム発生源と、電子ビーム発生源から発生し
加速された電子ビームを試料上に細く集束するための磁
界型対物レンズと、試料上で電子ビームの走査を行うた
めの電子ビーム偏向手段と、磁界型対物レンズの上部の
電子ビーム光軸から離れた位置に設けられた２次電子検
出器と、電子ビーム光軸上に光を導入するための電子ビ
ーム通過孔を有した光学ミラーと、磁界型対物レンズに
接近して設けられ、中心に電子ビーム通過開口を有した
光学顕微鏡対物レンズ部と、光学顕微鏡対物レンズ部の
レンズを囲むように設けられた導電体と、光学顕微鏡対
物レンズ部の上部に光軸に沿って設けられた円筒状のメ
ッシュ電極と、導電体に試料電位に対して正の電位を印
加する電源とより構成される。According to a third aspect of the present invention, there is provided a scanning electron microscope comprising: an electron beam source; a magnetic field type objective lens for narrowly focusing an electron beam generated from the electron beam source and accelerated on the sample; An electron beam deflecting means for scanning an electron beam with a secondary electron detector provided above the magnetic field type objective lens at a position away from the electron beam optical axis, and introducing light onto the electron beam optical axis An optical mirror having an electron beam passage hole for carrying out, an optical microscope objective lens portion provided close to a magnetic field type objective lens and having an electron beam passage opening in the center, and a lens of the optical microscope objective lens portion And a cylindrical mesh electrode provided along the optical axis above the objective lens unit of the optical microscope, and a power supply for applying a positive potential to the conductor with respect to the sample potential. It is.
【００１０】請求項４の発明に基づく走査電子顕微鏡
は、電子ビーム発生源と、電子ビーム発生源から発生し
加速された電子ビームを試料上に細く集束するための磁
界型対物レンズと、試料上で電子ビームの走査を行うた
めの電子ビーム偏向手段と、磁界型対物レンズの上部の
電子ビーム光軸から離れた位置に設けられた２次電子検
出器と、電子ビーム光軸上に光を導入するための電子ビ
ーム通過孔を有した光学ミラーと、磁界型対物レンズに
接近して設けられ、中心に電子ビーム通過開口を有した
光学顕微鏡対物レンズ部と、光学顕微鏡対物レンズ部の
レンズを囲むように設けられた導電体と、光学顕微鏡対
物レンズ部の上部に光軸に沿って設けられた円筒状のメ
ッシュ電極と、光学顕微鏡対物レンズ部上方であって、
メッシュ電極の下方に設けられた減速電極と、導電体に
試料電位に対して正の電位を印加する電源とより構成さ
れる。According to a fourth aspect of the present invention, there is provided a scanning electron microscope comprising: an electron beam source; a magnetic field type objective lens for narrowly focusing an electron beam generated and accelerated from the electron beam source on the sample; An electron beam deflecting means for scanning an electron beam with a secondary electron detector provided above the magnetic field type objective lens at a position away from the electron beam optical axis, and introducing light onto the electron beam optical axis An optical mirror having an electron beam passage hole for carrying out, an optical microscope objective lens portion provided close to a magnetic field type objective lens and having an electron beam passage opening in the center, and a lens of the optical microscope objective lens portion The conductor provided as described above, a cylindrical mesh electrode provided along the optical axis above the optical microscope objective lens unit, and above the optical microscope objective lens unit,
It consists of a deceleration electrode provided below the mesh electrode and a power supply for applying a positive potential to the conductor with respect to the sample potential.
【００１１】請求項５の発明に基づく走査電子顕微鏡
は、導電体に試料電位に対して正の電位を印加する可変
電源を備えた。請求項６の発明に基づく走査電子顕微鏡
は、２次電子検出器を、電子ビーム光軸に対称に複数設
けた。A scanning electron microscope according to a fifth aspect of the present invention includes a variable power supply for applying a positive potential to the conductor with respect to the sample potential. In the scanning electron microscope according to the invention of claim 6, a plurality of secondary electron detectors are provided symmetrically with respect to the optical axis of the electron beam.
【００１２】[0012]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を詳細に説明する。図１は、本発明に基づく光
学顕微鏡を電子ビーム照射系と同軸に組み込んだ走査電
子顕微鏡の一例を示している。図中１は電子銃であり、
電子銃１から発生し加速された電子ビームは、コンデン
サレンズ２と磁界型の対物レンズ３とによって試料４上
に細く集束される。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows an example of a scanning electron microscope in which an optical microscope according to the present invention is incorporated coaxially with an electron beam irradiation system. 1 is an electron gun in the figure,
The electron beam generated and accelerated from the electron gun 1 is narrowly focused on a sample 4 by a condenser lens 2 and a magnetic field type objective lens 3.
【００１３】試料４上に集束される電子ビームは、静電
型の偏向器５，６によって偏向され、その結果、電子ビ
ームは試料４上の所定領域で２次元的に走査される。コ
ンデンサレンズ２の下部の電子ビームの光軸上には、電
子ビームの通過孔７を有した反射ミラー８が配置されて
いる。The electron beam focused on the sample 4 is deflected by electrostatic deflectors 5 and 6, and as a result, the electron beam is two-dimensionally scanned in a predetermined area on the sample 4. On the optical axis of the electron beam below the condenser lens 2, a reflection mirror 8 having an electron beam passage hole 7 is arranged.
【００１４】９は電子ビームの光軸Ｏから離れた位置に
設けられた光学顕微鏡の照明部と接眼レンズを有した光
学顕微鏡ユニットであり、ユニット９からの光は反射ミ
ラー８に照射され、その光は反射ミラー８によって反射
されて電子ビームの光軸上に向けられる。Reference numeral 9 denotes an optical microscope unit having an illumination section of an optical microscope and an eyepiece provided at a position distant from the optical axis O of the electron beam. The light is reflected by the reflection mirror 8 and directed on the optical axis of the electron beam.
【００１５】電子ビーム光軸Ｏ上の試料４に接近した位
置には、磁界型対物レンズ３に絶縁体１０を介して光学
顕微鏡の対物レンズ部１１が取り付けられている。光学
顕微鏡対物レンズ部１１は、リング状の金属枠１２と、
金属枠１２の内側に取付けられた対物レンズの大鏡１３
と、対物レンズ部１１の下部に設けられた対物レンズの
小鏡１４と、金属枠１２部分と小鏡１４部分とを一体化
するための４枚の金属支持板１５とより構成されてい
る。At the position close to the sample 4 on the optical axis O of the electron beam, an objective lens section 11 of an optical microscope is attached to the magnetic field type objective lens 3 via an insulator 10. The optical microscope objective lens unit 11 includes a ring-shaped metal frame 12,
Large mirror 13 of objective lens mounted inside metal frame 12
And a small mirror 14 of the objective lens provided below the objective lens unit 11 and four metal support plates 15 for integrating the metal frame 12 and the small mirror 14.
【００１６】なお、４枚の金属支持板１５は、詳しくは
図示されていないが、光軸方向から見た場合に十字状に
配置されている。また、大鏡１３と小鏡１４には、それ
ぞれ電子ビーム光軸部分に電子ビームを通過させる通過
開口が穿たれている。Although not shown in detail, the four metal support plates 15 are arranged in a cross shape when viewed from the optical axis direction. The large mirror 13 and the small mirror 14 are each provided with a passage opening through which the electron beam passes through the optical axis of the electron beam.
【００１７】前記小鏡１４に穿たれた開口部に導電性パ
イプ１６が設けられている。また、前記支柱１５下面
（試料対向面）にネサ（NESA）処理を行って導電性の付
与された薄い透明ガラス板（図示せず）が設けられてい
る。前記導電性パイプ１６は前記透明ガラス板を挾んで
金属支柱１５ネジ込まれており、その結果、金属枠１２
と、金属支柱１５と、透明ガラス板と、導電性パイプ１
６とは電気的に接続されている。金属枠１２は可変電源
１７に接続されており、可変電源１７から金属枠１２、
金属支柱１５、透明ガラス板、導電性パイプ１６には、
可変電源１７から数ＫＶの電圧が印加される。A conductive pipe 16 is provided in an opening formed in the small mirror 14. Further, a thin transparent glass plate (not shown) provided with conductivity by performing a NESA process on the lower surface (the sample facing surface) of the support 15 is provided. The conductive pipe 16 is screwed into the metal support 15 with the transparent glass plate interposed therebetween.
, A metal support 15, a transparent glass plate, and a conductive pipe 1.
6 is electrically connected. The metal frame 12 is connected to a variable power supply 17.
The metal support 15, the transparent glass plate, and the conductive pipe 16
A voltage of several KV is applied from the variable power supply 17.
【００１８】光学顕微鏡対物レンズ部１１の上部には、
ドーナツ状の減速電極１８が設けられ、また、光学顕微
鏡対物レンズ部１１の上部の電子ビーム光軸Ｏに沿っ
て、円筒状のメッシュ電極１９が配置されている。減速
電極１８とメッシュ電極１９は一体化されており、図示
していない電源から、０Ｖ〜数１０Ｖの電圧が印加され
る。On the upper part of the objective section 11 of the optical microscope,
A donut-shaped deceleration electrode 18 is provided, and a cylindrical mesh electrode 19 is arranged along the electron beam optical axis O above the objective lens unit 11 of the optical microscope. The deceleration electrode 18 and the mesh electrode 19 are integrated, and a voltage of 0 V to several tens V is applied from a power supply (not shown).
【００１９】メッシュ電極１９の上部には、上方に向か
う２次電子を折り返すためのリペラー電極２０が配置さ
れている。また、リペラー電極には図示していない電源
からマイナス数１０Ｖの電圧が印加されている。メッシ
ュ電極１９の外側には、電子ビーム光軸Ｏに軸対称に、
第１の２次電子検出器２１と第２の２次電子検出器２２
とが設けられている。それぞれの２次電子検出器は、２
次電子を引き寄せるための吸引電圧が印加される吸引電
極、２次電子の入射によって発光するシンチレータ、シ
ンチレータからの光を電気信号に変換して増幅する光電
子増倍管等より構成されている。第１と第２の２次電子
検出器２１，２２の検出信号は、図示していないが加算
器によって加算され、その後増幅されて陰極線管に供給
される。このような構成の動作を次に説明する。Above the mesh electrode 19, a repeller electrode 20 for turning up secondary electrons directed upward is disposed. A voltage of minus several tens of volts is applied to the repeller electrode from a power supply (not shown). Outside the mesh electrode 19, axisymmetrically with respect to the electron beam optical axis O,
First secondary electron detector 21 and second secondary electron detector 22
Are provided. Each secondary electron detector has 2
It is composed of a suction electrode to which a suction voltage for attracting the next electron is applied, a scintillator which emits light by incidence of the secondary electron, a photomultiplier tube which converts light from the scintillator into an electric signal and amplifies it. Although not shown, the detection signals of the first and second secondary electron detectors 21 and 22 are added by an adder, then amplified and supplied to a cathode ray tube. The operation of such a configuration will now be described.
【００２０】まず、試料４の光学像を観察する場合、光
学顕微鏡ユニット９の照明部からの光を反射ミラー８に
向けて照射する。光は反射ミラー８によって反射され、
電子ビームの光軸Ｏに沿って下方へと向かう。光は、光
学顕微鏡対物レンズ部１１の小鏡１４によって反射さ
れ、その反射光は，大鏡１３によって反射集束されて試
料４上に照射される。First, when observing an optical image of the sample 4, light from the illumination unit of the optical microscope unit 9 is irradiated toward the reflection mirror 8. The light is reflected by the reflecting mirror 8,
It goes down along the optical axis O of the electron beam. The light is reflected by the small mirror 14 of the objective lens unit 11 of the optical microscope, and the reflected light is reflected and focused by the large mirror 13 and irradiated onto the sample 4.
【００２１】試料４上からの光は、今度は逆の経路をた
どって光学顕微鏡ユニット９の接眼レンズ部へと向か
う。すなわち、試料４からの光は、大鏡１３によって反
射され、小鏡１４によって反射され、反射ミラー８へと
向かう。この結果接眼レンズ部によって試料４の光学像
の観察を行うことができる。なお、接眼レンズ部にテレ
ビカメラを配置すれば、試料像を陰極線管などで観察す
ることができる。The light from the sample 4 follows the reverse route to the eyepiece section of the optical microscope unit 9. That is, light from the sample 4 is reflected by the large mirror 13, reflected by the small mirror 14, and travels to the reflection mirror 8. As a result, the optical image of the sample 4 can be observed by the eyepiece unit. If a television camera is arranged in the eyepiece section, the sample image can be observed with a cathode ray tube or the like.
【００２２】次に試料４の２次電子像の観察動作につい
て説明する。まず電子銃１から電子ビームを発生させ、
発生し加速された電子ビームをコンデンサレンズ２と磁
界型対物レンズ３とによって試料４上に細く集束する。
更に、試料に向かう電子ビームは、２段の静電偏向器
５，６によって偏向され、試料４上の任意の２次元領域
は電子ビームによって走査される。Next, the operation of observing the secondary electron image of the sample 4 will be described. First, an electron beam is generated from the electron gun 1,
The generated and accelerated electron beam is finely focused on the sample 4 by the condenser lens 2 and the magnetic field type objective lens 3.
Further, the electron beam toward the sample is deflected by the two-stage electrostatic deflectors 5 and 6, and an arbitrary two-dimensional area on the sample 4 is scanned by the electron beam.
【００２３】試料４への電子ビームの照射によって試料
４からは２次電子が発生する。ここで、光学顕微鏡の対
物レンズ部１１に電源１７から数ＫＶの電圧が印加され
ていることから、接地電位の試料４と磁界型対物レンズ
３との間には、軸対称な加速電界が生じている。この電
界により、一次電子ビームの照射によって発生した２次
電子ｅは、上方に向かって強く加速される。By irradiating the sample 4 with an electron beam, secondary electrons are generated from the sample 4. Here, since a voltage of several KV is applied from the power supply 17 to the objective lens unit 11 of the optical microscope, an axially symmetric acceleration electric field is generated between the sample 4 at the ground potential and the magnetic field type objective lens 3. ing. Due to this electric field, the secondary electrons e generated by the irradiation of the primary electron beam are strongly accelerated upward.
【００２４】２次電子ｅは、磁界型対物レンズ３の磁界
と、上記加速電場のレンズ作用によって、２次電子ビー
ム（方向の揃った電子線束）となり、光学顕微鏡対物レ
ンズ部１１の導電性パイプ１６をパイプ壁に衝突するこ
と無く通過し、対物レンズ部１１の上方に効率良く取り
出される。対物レンズ部１１の上部においては、ドーナ
ツ状の減速電極１８が設けられており、この減速電極１
８が形成する強いレンズ作用により、２次電子ｅは大き
く分散する。この結果、電子ビーム光軸から離れた位置
にある２次電子は、直接メッシュ電極１９に入射しこれ
を通過して２次電子検出器２１，２２に検出される。The secondary electrons e are converted into a secondary electron beam (an electron beam having a uniform direction) by the magnetic field of the magnetic field type objective lens 3 and the lens action of the accelerating electric field. The light passes through the pipe 16 without colliding with the pipe wall, and is efficiently taken out above the objective lens unit 11. A donut-shaped deceleration electrode 18 is provided above the objective lens unit 11.
Due to the strong lens action formed by 8, the secondary electrons e are greatly dispersed. As a result, the secondary electrons located at a position distant from the electron beam optical axis directly enter the mesh electrode 19, pass through the mesh electrode 19, and are detected by the secondary electron detectors 21 and 22.
【００２５】また、光軸に近い部分を上方に向かう２次
電子は、メッシュ電極１９の上部に設けられた負電位の
リペラー電極２０が、メッシュ電極１９との間に形成す
る逆電界により反射され、メッシュ電極１９に入射して
通過する。メッシュ電極１９を通過した２次電子は、正
の高電圧に保持された検出器２１，２２とメッシュ電極
１９との間に形成される電場によって加速され、２次電
子検出器２１，２２によって検出される。この際、メッ
シュ電極１９は電子ビーム光軸を囲うように配置されて
いるため、１０ＫＶ前後の検出器からの電界は効果的に
シールドされる。従って１次ビームが検出器電界によっ
て不均一な電気力を受けて歪むことが防止される。Further, secondary electrons heading upward in a portion near the optical axis are reflected by a reverse electric field formed between the mesh electrode 19 and the repeller electrode 20 having a negative potential provided above the mesh electrode 19. Incident on the mesh electrode 19 and pass therethrough. The secondary electrons that have passed through the mesh electrode 19 are accelerated by an electric field formed between the detectors 21 and 22 held at a positive high voltage and the mesh electrode 19, and are detected by the secondary electron detectors 21 and 22. Is done. At this time, since the mesh electrode 19 is arranged so as to surround the optical axis of the electron beam, an electric field from the detector of about 10 KV is effectively shielded. Therefore, the primary beam is prevented from being distorted by the non-uniform electric force due to the detector electric field.
【００２６】第１と第２の２次電子検出器２１，２２の
検出信号は、図示していないが加算器によって加算さ
れ、その後増幅されて陰極線管に供給される。陰極線管
には、静電偏向器５，６に供給される走査信号も供給さ
れており、その結果、陰極線管には、試料４の２次電子
走査像が表示される。このようにして、例えば、シリコ
ンウエハ上に形成されたＩＣパターンを観察する場合な
どでは、色別情報を有する光学顕微鏡で数百倍の観察倍
率で試料面の観察を行って効率的に視野捜しを行い、そ
の後走査電子顕微鏡機能によって所望の試料領域の高倍
率観察を実行することができる。また、光学顕微鏡像と
走査電子顕微鏡像との同時観察も行うことができる。The detection signals of the first and second secondary electron detectors 21 and 22 are added by an adder (not shown), then amplified and supplied to a cathode ray tube. Scanning signals supplied to the electrostatic deflectors 5 and 6 are also supplied to the cathode ray tube. As a result, a secondary electron scanning image of the sample 4 is displayed on the cathode ray tube. Thus, for example, when observing an IC pattern formed on a silicon wafer, the sample surface is observed with an optical microscope having color-specific information at an observation magnification of several hundred times to efficiently search for a visual field. After that, high-magnification observation of a desired sample area can be performed by a scanning electron microscope function. Simultaneous observation of an optical microscope image and a scanning electron microscope image can also be performed.
【００２７】なお、上記した構成で、磁界型対物レンズ
３は、電子ビームの加速電圧を変えた時、その磁界強度
が大幅に変化する。その場合、光学顕微鏡対物レンズ部
１１に電源１７から印加する電圧の値をその磁界強度に
応じて変化させれば、常に効率良く２次電子を導電性パ
イプ１６を通過させて、２次電子検出効率を向上させる
ことができる。In the above configuration, when the acceleration voltage of the electron beam is changed, the magnetic field intensity of the magnetic field type objective lens 3 changes significantly. In this case, if the value of the voltage applied from the power supply 17 to the optical microscope objective lens unit 11 is changed in accordance with the magnetic field strength, the secondary electrons are always efficiently passed through the conductive pipe 16 and the secondary electron detection is performed. Efficiency can be improved.
【００２８】以上本発明の実施の形態を詳述したが、本
発明はこの形態に限定されずに幾多の変形が可能であ
る。例えば、２次電子検出器を軸対称に２つ設けたが、
単一の２次電子検出器であっても良く、逆に３つ以上の
複数であっても良い。Although the embodiment of the present invention has been described in detail, the present invention is not limited to this embodiment, and various modifications can be made. For example, two secondary electron detectors are provided axially symmetrically,
A single secondary electron detector may be used, or three or more secondary electron detectors may be used.
【００２９】[0029]
【発明の効果】以上説明したように、請求項１の発明に
基づく走査電子顕微鏡は、磁界型対物レンズに接近して
中心に電子ビーム通過開口を有した光学顕微鏡対物レン
ズ部を設け、光学顕微鏡対物レンズ部のレンズを囲むよ
うに設けられた導電体に試料電位に対して正の電位を印
加するように構成したので、試料からの２次電子を効率
良く対物レンズ部上部に取り出し、２次電子検出器によ
って検出することができる。As described above, the scanning electron microscope according to the first aspect of the present invention is provided with an optical microscope objective lens portion having an electron beam passage opening at the center close to the magnetic field type objective lens. Since a positive potential with respect to the sample potential is applied to a conductor provided so as to surround the lens of the objective lens portion, secondary electrons from the sample are efficiently extracted to the upper portion of the objective lens portion, and It can be detected by an electronic detector.
【００３０】請求項２の発明に基づく走査電子顕微鏡
は、磁界型対物レンズに接近して中心に電子ビーム通過
開口を有した光学顕微鏡対物レンズ部を設け、光学顕微
鏡対物レンズ部のレンズを囲むように設けられた導電体
と、光学顕微鏡対物レンズ部の中心の電子ビーム通過開
口に電子ビーム光軸に沿って設けられた導電性パイプと
に試料電位に対して正の電位を印加するように構成した
ので、試料からの２次電子を効率良く対物レンズ部上部
に取り出し、２次電子検出器によって検出することがで
きる。The scanning electron microscope according to the second aspect of the present invention is provided with an optical microscope objective lens portion having an electron beam passage opening at the center near the magnetic field type objective lens so as to surround the lens of the optical microscope objective lens portion. And a conductive pipe provided along the electron beam optical axis at the electron beam passage opening at the center of the objective lens section of the optical microscope, so as to apply a positive potential to the sample potential. Therefore, secondary electrons from the sample can be efficiently taken out to the upper part of the objective lens portion and detected by the secondary electron detector.
【００３１】請求項３の発明に基づく走査電子顕微鏡
は、磁界型対物レンズに接近して中心に電子ビーム通過
開口を有した光学顕微鏡対物レンズ部を設け、光学顕微
鏡対物レンズ部のレンズを囲むように設けられた導電体
に、試料電位に対して正の電位を印加すると共に、光学
顕微鏡対物レンズ部の上部に、円筒状のメッシュ電極と
を設けるように構成したので、検出器の電界による一次
ビームの歪の影響がなく、かつ、試料からの２次電子を
効率良く対物レンズ部上部に取り出し、２次電子検出器
によって検出することができる。The scanning electron microscope according to the third aspect of the present invention is provided with an optical microscope objective lens portion having an electron beam passage opening at the center close to the magnetic field type objective lens so as to surround the lens of the optical microscope objective lens portion. A positive electric potential with respect to the specimen electric potential is applied to the conductor provided in the optical microscope, and a cylindrical mesh electrode is provided on the upper part of the objective lens portion of the optical microscope. There is no influence of beam distortion, and secondary electrons from the sample can be efficiently taken out to the upper portion of the objective lens unit and detected by a secondary electron detector.
【００３２】請求項４の発明に基づく走査電子顕微鏡
は、磁界型対物レンズに接近して中心に電子ビーム通過
開口を有した光学顕微鏡対物レンズ部を設け、光学顕微
鏡対物レンズ部のレンズを囲むように設けられた導電体
に、試料電位に対して正の電位を印加すると共に、光学
顕微鏡対物レンズ部の上部に、円筒状のメッシュ電極
と、光学顕微鏡対物レンズ部上方であって、メッシュ電
極の下方に設けられた減速電極とを設けるように構成し
たので、試料からの２次電子を効率良く対物レンズ部上
部に取り出し、２次電子検出器によって検出することが
できる。In the scanning electron microscope according to the fourth aspect of the present invention, an optical microscope objective lens portion having an electron beam passage opening at the center is provided near the magnetic field type objective lens so as to surround the lens of the optical microscope objective lens portion. A positive potential with respect to the sample potential is applied to the conductor provided on the optical microscope, and a cylindrical mesh electrode is provided above the optical microscope objective lens, and a mesh electrode is provided above the optical microscope objective lens. Since the configuration is such that the deceleration electrode provided below is provided, secondary electrons from the sample can be efficiently taken out to the upper portion of the objective lens unit and detected by the secondary electron detector.
【００３３】請求項５の発明に基づく走査電子顕微鏡
は、磁界型対物レンズの磁界強度に応じて導電体に印加
される電位を可変するように構成したので、磁界型対物
レンズの磁界強度によらず、試料からの２次電子を効率
良く対物レンズ部上部に取り出し、２次電子検出器によ
って検出することができる。In the scanning electron microscope according to the fifth aspect of the present invention, the potential applied to the conductor is varied according to the magnetic field strength of the magnetic field type objective lens. Instead, secondary electrons from the sample can be efficiently taken out to the upper portion of the objective lens portion and detected by a secondary electron detector.
【００３４】請求項６の発明に基づく走査電子顕微鏡
は、２次電子検出器を、電子ビーム光軸に対称に複数設
けるように構成したので、２次電子の検出効率を向上さ
せることができる。In the scanning electron microscope according to the sixth aspect of the present invention, since a plurality of secondary electron detectors are provided symmetrically with respect to the optical axis of the electron beam, the efficiency of detecting secondary electrons can be improved.
【００３５】また、上記した各請求項の発明では、例え
ば、シリコンウエハ上に金属膜が蒸着されている面を観
察する場合などでは、色別情報を有する光学顕微鏡で数
百倍の観察倍率で試料面の観察を行って視野捜しを行
い、その後走査電子顕微鏡機能によって所望の試料領域
の高倍率観察を実行することができる。また、光学顕微
鏡像と走査電子顕微鏡像との同時観察も行うことができ
る。Further, according to the invention of each of the above-mentioned claims, for example, when observing a surface on which a metal film is deposited on a silicon wafer, an optical microscope having color-specific information has an observation magnification of several hundred times. Observation of the sample surface is performed to search for a visual field, and thereafter, high-magnification observation of a desired sample region can be performed by a scanning electron microscope function. Simultaneous observation of an optical microscope image and a scanning electron microscope image can also be performed.
【図１】本発明に基づく光学顕微鏡を電子ビーム照射系
と同軸に組み込んだ走査電子顕微鏡を示す図である。FIG. 1 is a view showing a scanning electron microscope in which an optical microscope according to the present invention is incorporated coaxially with an electron beam irradiation system.
１ 電子銃 ２ コンデンサレンズ ３ 磁界型対物レンズ ４ 試料 ５，６ 静電偏向器 ８ 反射ミラー ９ 光学顕微鏡ユニット １０ 絶縁体 １１ 光学顕微鏡対物レンズ部 １２ 金属枠 １３ 大鏡 １４ 小鏡 １５ 金属支柱 １６ 導電性パイプ １７ 可変電源 １８ 減速電極 １９ メッシュ電極 ２０ リペラー電極 ２１，２２ ２次電子検出器 DESCRIPTION OF SYMBOLS 1 Electron gun 2 Condenser lens 3 Magnetic field type objective lens 4 Sample 5, 6 Electrostatic deflector 8 Reflection mirror 9 Optical microscope unit 10 Insulator 11 Optical microscope objective lens part 12 Metal frame 13 Large mirror 14 Small mirror 15 Metal column 16 Conductivity Pipe 17 variable power supply 18 deceleration electrode 19 mesh electrode 20 repeller electrode 21, 22 secondary electron detector
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01J 37/244 H01J 37/22 H01J 37/28 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01J 37/244 H01J 37/22 H01J 37/28
Claims (6)
から発生し加速された電子ビームを試料上に細く集束す
るための磁界型対物レンズと、試料上で電子ビームの走
査を行うための電子ビーム偏向手段と、磁界型対物レン
ズの上部の電子ビーム光軸から離れた位置に設けられた
２次電子検出器と、電子ビーム光軸上に光を導入するた
めの電子ビーム通過孔を有した光学ミラーと、磁界型対
物レンズに接近して設けられ、中心に電子ビーム通過開
口を有した光学顕微鏡対物レンズ部と、光学顕微鏡対物
レンズ部のレンズを囲むように設けられた導電体とを備
えており、導電体に試料電位に対して正の電位を印加す
るように構成した走査電子顕微鏡。An electron beam source, a magnetic field type objective lens for narrowly focusing an electron beam generated and accelerated from the electron beam source on a sample, and an electron for scanning the electron beam on the sample. It has a beam deflecting means, a secondary electron detector provided at a position away from the electron beam optical axis above the magnetic field type objective lens, and an electron beam passage hole for introducing light on the electron beam optical axis. An optical mirror, an optical microscope objective lens portion provided close to the magnetic field type objective lens and having an electron beam passage opening at the center, and a conductor provided to surround the lens of the optical microscope objective lens portion A scanning electron microscope configured to apply a positive potential to a conductor with respect to a sample potential.
から発生し加速された電子ビームを試料上に細く集束す
るための磁界型対物レンズと、試料上で電子ビームの走
査を行うための電子ビーム偏向手段と、磁界型対物レン
ズの上部の電子ビーム光軸から離れた位置に設けられた
２次電子検出器と、電子ビーム光軸上に光を導入するた
めの電子ビーム通過孔を有した光学ミラーと、磁界型対
物レンズに接近して設けられ、中心に電子ビーム通過開
口を有した光学顕微鏡対物レンズ部と、光学顕微鏡対物
レンズ部のレンズを囲むように設けられた導電体と、光
学顕微鏡対物レンズ部の中心の電子ビーム通過開口に電
子ビーム光軸に沿って設けられた導電性パイプとを備え
ており、導電体と導電性パイプに試料電位に対して正の
電位を印加するように構成した走査電子顕微鏡。2. An electron beam generating source, a magnetic field type objective lens for narrowly focusing an electron beam generated and accelerated from the electron beam generating source on a sample, and an electron for scanning the electron beam on the sample. It has a beam deflecting means, a secondary electron detector provided at a position away from the electron beam optical axis above the magnetic field type objective lens, and an electron beam passage hole for introducing light on the electron beam optical axis. An optical mirror, an optical microscope objective lens portion provided close to the magnetic field type objective lens and having an electron beam passage opening at the center, a conductor provided to surround the lens of the optical microscope objective lens portion, and an optical A conductive pipe provided along the optical axis of the electron beam at the electron beam passage opening at the center of the microscope objective lens section so that a positive potential with respect to the sample potential is applied to the conductive body and the conductive pipe. Scanning electron microscope configured in.
から発生し加速された電子ビームを試料上に細く集束す
るための磁界型対物レンズと、試料上で電子ビームの走
査を行うための電子ビーム偏向手段と、磁界型対物レン
ズの上部の電子ビーム光軸から離れた位置に設けられた
２次電子検出器と、電子ビーム光軸上に光を導入するた
めの電子ビーム通過孔を有した光学ミラーと、磁界型対
物レンズに接近して設けられ、中心に電子ビーム通過開
口を有した光学顕微鏡対物レンズ部と、光学顕微鏡対物
レンズ部のレンズを囲むように設けられた導電体と、光
学顕微鏡対物レンズ部の上部に光軸に沿って設けられた
円筒状のメッシュ電極とを備えており、導電体に試料電
位に対して正の電位を印加するように構成した走査電子
顕微鏡。3. An electron beam source, a magnetic field type objective lens for narrowly focusing an electron beam generated and accelerated from the electron beam source on a sample, and an electron for scanning the electron beam on the sample. It has a beam deflecting means, a secondary electron detector provided at a position away from the electron beam optical axis above the magnetic field type objective lens, and an electron beam passage hole for introducing light on the electron beam optical axis. An optical mirror, an optical microscope objective lens portion provided close to the magnetic field type objective lens and having an electron beam passage opening at the center, a conductor provided to surround the lens of the optical microscope objective lens portion, and an optical A scanning electron microscope comprising: a cylindrical mesh electrode provided along an optical axis above a microscope objective lens unit; and configured to apply a positive potential to a conductor with respect to a sample potential.
から発生し加速された電子ビームを試料上に細く集束す
るための磁界型対物レンズと、試料上で電子ビームの走
査を行うための電子ビーム偏向手段と、磁界型対物レン
ズの上部の電子ビーム光軸から離れた位置に設けられた
２次電子検出器と、電子ビーム光軸上に光を導入するた
めの電子ビーム通過孔を有した光学ミラーと、磁界型対
物レンズに接近して設けられ、中心に電子ビーム通過開
口を有した光学顕微鏡対物レンズ部と、光学顕微鏡対物
レンズ部のレンズを囲むように設けられた導電体と、光
学顕微鏡対物レンズ部の上部に光軸に沿って設けられた
円筒状のメッシュ電極と、光学顕微鏡対物レンズ部上方
であって、メッシュ電極の下方に設けられた減速電極と
を備えており、導電体に試料電位に対して正の電位を印
加するように構成した走査電子顕微鏡。4. An electron beam generation source, a magnetic field type objective lens for narrowly focusing an electron beam generated and accelerated from the electron beam generation source on a sample, and an electron for scanning the electron beam on the sample. It has a beam deflecting means, a secondary electron detector provided at a position away from the electron beam optical axis above the magnetic field type objective lens, and an electron beam passage hole for introducing light on the electron beam optical axis. An optical mirror, an optical microscope objective lens portion provided close to the magnetic field type objective lens and having an electron beam passage opening in the center, a conductor provided to surround the lens of the optical microscope objective lens portion, and an optical It has a cylindrical mesh electrode provided along the optical axis above the microscope objective lens unit, and a deceleration electrode provided above the optical microscope objective lens unit and below the mesh electrode. A scanning electron microscope configured to apply a positive potential to the body relative to the sample potential.
求項１〜４の何れかに記載の走査電子顕微鏡。5. The scanning electron microscope according to claim 1, wherein a potential applied to the conductor is variable.
称に複数設けられた請求項１〜４の何れかに記載の走査
電子顕微鏡。6. The scanning electron microscope according to claim 1, wherein a plurality of secondary electron detectors are provided symmetrically with respect to the optical axis of the electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20594095A JP3244620B2 (en) | 1995-08-11 | 1995-08-11 | Scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20594095A JP3244620B2 (en) | 1995-08-11 | 1995-08-11 | Scanning electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0955181A JPH0955181A (en) | 1997-02-25 |
| JP3244620B2 true JP3244620B2 (en) | 2002-01-07 |
Family
ID=16515246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20594095A Expired - Fee Related JP3244620B2 (en) | 1995-08-11 | 1995-08-11 | Scanning electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3244620B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455606B1 (en) | 1997-04-02 | 2002-09-24 | Sanyo Chemical Industries, Ltd. | Polyurethane foam, process for producing the same, and foam forming composition |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4302316B2 (en) * | 1998-03-09 | 2009-07-22 | 株式会社日立製作所 | Scanning electron microscope |
| US6633034B1 (en) * | 2000-05-04 | 2003-10-14 | Applied Materials, Inc. | Method and apparatus for imaging a specimen using low profile electron detector for charged particle beam imaging apparatus including electrostatic mirrors |
| JP3953309B2 (en) | 2001-12-04 | 2007-08-08 | 株式会社トプコン | Scanning electron microscope |
| DE60332808D1 (en) | 2003-03-24 | 2010-07-15 | Integrated Circuit Testing | Charged particle beam device |
| JP5280238B2 (en) * | 2009-02-09 | 2013-09-04 | 日本電子株式会社 | Charged particle beam equipment |
| CN113539769B (en) * | 2021-07-16 | 2023-01-17 | 苏州矽视科技有限公司 | Electron beam imaging equipment for realizing coaxiality and realization method |
-
1995
- 1995-08-11 JP JP20594095A patent/JP3244620B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455606B1 (en) | 1997-04-02 | 2002-09-24 | Sanyo Chemical Industries, Ltd. | Polyurethane foam, process for producing the same, and foam forming composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0955181A (en) | 1997-02-25 |
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