JP3241040B2 - Heat treatment equipment - Google Patents
Heat treatment equipmentInfo
- Publication number
- JP3241040B2 JP3241040B2 JP31678790A JP31678790A JP3241040B2 JP 3241040 B2 JP3241040 B2 JP 3241040B2 JP 31678790 A JP31678790 A JP 31678790A JP 31678790 A JP31678790 A JP 31678790A JP 3241040 B2 JP3241040 B2 JP 3241040B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- thermocouple
- wafer
- alloy wire
- metal wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 〔概 要〕 本発明は半導体ウエハの加熱を伴う処理に於ける温度
測定に関し、 加熱処理中のウエハ表面状態の変化に影響されること
なく、ウエハの温度を測定することを目的とし、 本発明の加熱処理装置に備えられた温度測定手段は、 ２種類の合金線又は金属線の端部を結合して形成した
熱電対の熱接点が表面に当接されたモニタウエハが、加
熱炉内の被処理体に近接して配置され、前記熱電対の前
記２種類の合金線又は金属線を中継手段を介して前記加
熱炉外に延長して形成した、前記熱電対の前記２種類の
合金線又は金属線の各端部を定温部に接続させ、前記定
温部における前記熱電対の起電力を計測することによ
り、前記被処理体の温度を測定するように構成されてお
り、かつ、前記加熱炉が、前記中継手段と、前記熱電対
及び前記モニタウエハを保持する機構が設けられた第１
の部分と、炉壁の一部に窓部が形成され、前記窓部にお
いて前記第１の部分に対し着脱可能に接続する第２の部
分とにより構成されているか、もしくは、前記熱電対の
前記第１の合金線又は金属線及び前記第２の合金線又は
金属線の各々が、一方の端部が前記熱接点を形成し、前
記モニタウエハに当接される第１の素線と、一方の端部
が前記中継手段を介して前記加熱炉外に延長される第２
の素線と、前記第１の素線の他方の端部と前記第２の素
線の他方の端部とが互いに当接される接続部とを有し、
前記接続部における前記第１の素線の他方の端部と前記
第２の素線の他方の端部の当接状態が、前記被処理体及
び前記被処理体を保持する保持具の重量により押圧によ
り維持されている。DETAILED DESCRIPTION OF THE INVENTION [Overview] The present invention relates to temperature measurement in a process involving heating of a semiconductor wafer, and measures the temperature of the wafer without being affected by changes in the surface state of the wafer during the heating process. The temperature measuring means provided in the heat treatment apparatus of the present invention is a monitor in which a thermal contact of a thermocouple formed by connecting the ends of two kinds of alloy wires or metal wires is in contact with the surface. The thermocouple, wherein a wafer is disposed in proximity to the object to be processed in the heating furnace, and the two types of alloy wires or metal wires of the thermocouple are formed to extend out of the heating furnace via relay means. Each end of the two types of alloy wire or metal wire is connected to a constant temperature portion, and by measuring the electromotive force of the thermocouple in the constant temperature portion, the temperature of the object to be processed is measured. And the heating furnace, the relay means First of the thermocouple and mechanisms for holding the monitor wafer is provided
And a second part in which a window is formed in a part of the furnace wall and the window is detachably connected to the first part in the window, or the second part of the thermocouple Each of a first alloy wire or a metal wire and the second alloy wire or a metal wire has one end forming the thermal contact, and a first element wire abutting on the monitor wafer; The second end is extended out of the heating furnace through the relay means.
And a connection portion at which the other end of the first strand and the other end of the second strand are in contact with each other,
The contact state between the other end of the first strand and the other end of the second strand in the connection portion depends on the weight of the object to be processed and a holder for holding the object to be processed. It is maintained by pressing.
本発明は半導体ウエハを加熱処理する際の温度測定に
関わり、特にCVD処理のようにウエハの表面が経時変化
する処理が施される場合に適した温度測定装置に関わ
る。The present invention relates to temperature measurement when heating a semiconductor wafer, and more particularly to a temperature measurement apparatus suitable for performing a process in which the surface of a wafer changes with time, such as a CVD process.
近年、集積回路のような半導体装置の高集積化、微細
化が進められているが、それに伴ってウエハ・プロセス
に於ける温度制御も高い精度が要求されるに至ってい
る。In recent years, high integration and miniaturization of semiconductor devices such as integrated circuits have been promoted, and accordingly, high precision is required for temperature control in a wafer process.
通常の抵抗炉に於ける炉内温度の制御は、ウエハを収
容して処理する石英管の外部に設置された熱電対による
温度測定に基づいて行われる。この測定方法自体は1/10
℃或いはそれ以上の精度を持つものであるが、ウエハの
置かれる空間の温度を測定しているのではないから、ウ
エハの温度は別に測定し、所定の温度で処理が行われて
いることを確認することが必要である。Control of the furnace temperature in a normal resistance furnace is performed based on temperature measurement by a thermocouple installed outside a quartz tube that accommodates and processes a wafer. This measurement method itself is 1/10
Although it has an accuracy of ℃ or more, it does not measure the temperature of the space where the wafer is placed, so the temperature of the wafer is measured separately and it is confirmed that the processing is performed at the predetermined temperature. It is necessary to confirm.
処理中のウエハの温度測定は第７図に示すような構成
で行われる。図の16は石英のような耐熱材で形成される
管状容器であって、反応管と呼ばれることもあり、本明
細書では石英管と呼ぶ。Siウエハのような被処理ウエハ
10は石英製のウエハ支持台13に搭載されて石英管内に収
容され、これに添わせて炉内に挿入された保護管15に収
容された熱電対12によって温度が計測される。17はヒー
タを蔵する炉体である。The temperature measurement of the wafer during processing is performed by the configuration as shown in FIG. Reference numeral 16 in the figure denotes a tubular container formed of a heat-resistant material such as quartz, which is sometimes called a reaction tube, and is called a quartz tube in this specification. Processed wafer such as Si wafer
Reference numeral 10 is mounted on a quartz wafer support 13 and accommodated in a quartz tube, and the temperature is measured by a thermocouple 12 accommodated in a protective tube 15 inserted into a furnace. Reference numeral 17 denotes a furnace body containing a heater.
熱電対の熱接点とウエハとは比較的接近して置かれて
いるから、両者の温度差は少なく、擾乱の無い限り、こ
こで測定した値をウエハの温度と見なして処理が進めら
れてきた。Since the thermal junction of the thermocouple and the wafer are located relatively close to each other, the temperature difference between the two is small, and as long as there is no disturbance, processing has been proceeded with the value measured here as the wafer temperature. .
ウエハの受ける処理が、注入イオンの活性化のような
単純な熱処理であれば、この種の温度モニタでも実用上
問題はないが、CVD処理のように時間経過に伴ってウエ
ハや熱電対保護管の表面の状態が変化する場合は、測定
している温度とウエハの温度との間にずれの生ずるおそ
れがある。而して、実際にずれが生じていてもそれを確
認することはできない。If the processing received by the wafer is a simple heat treatment such as activation of implanted ions, there is no practical problem with this type of temperature monitor. When the state of the surface changes, there is a possibility that a difference occurs between the temperature being measured and the temperature of the wafer. Thus, even if a deviation actually occurs, it cannot be confirmed.
CVDに於ける表面状態の経時変化というのは、例えばS
iO2を堆積する場合を考えると、この場合はウエハ表面
で堆積が進行するばかりでなく、保護管の表面でも堆積
が進む。その場合、Si単結晶ウエハの研磨された表面と
アルミナ製保護管の粗表面との違いや、原料ガスが供給
される速度の違いから、両者の間で堆積速度が異なり、
SiO2層で被覆される状況が違ってくる。The change with time of the surface state in CVD is, for example, S
Considering the case of depositing iO 2 , in this case, the deposition proceeds not only on the wafer surface but also on the surface of the protection tube. In that case, the difference between the polished surface of the Si single crystal wafer and the rough surface of the alumina protective tube, and the difference in the rate at which the source gas is supplied, the deposition rate differs between the two,
The situation of being covered with the SiO 2 layer will be different.
このように、これ等の物体の熱的雰囲気が異なってく
ると、両者の温度にも差異が生じる。800℃と測定され
たウエハの温度が実際には850℃であったとすると、こ
の温度で堆積したSiO2の膜質は設計値の800℃で堆積さ
れたものの膜質とは異なるから、形成された素子の信頼
性が保証されないことになる。As described above, when the thermal atmosphere of these objects is different, a difference occurs between the two temperatures. Assuming that the temperature of the wafer measured at 800 ° C. is actually 850 ° C., the quality of the SiO 2 film deposited at this temperature is different from that of the film deposited at the designed value of 800 ° C. Will not be guaranteed.
本発明の目的は、このように熱的雰囲気に経時変化が
ある場合でも、被処理ウエハの温度が正確にモニタでき
る温度測定手段を提供することであり、この手段を備え
ることによって正確な処理温度を把握しながら加熱を伴
う処理を遂行し得る加熱処理装置を提供することであ
る。An object of the present invention is to provide a temperature measuring means capable of accurately monitoring the temperature of a wafer to be processed even when the thermal atmosphere changes over time. It is an object of the present invention to provide a heat treatment apparatus capable of performing a process involving heating while grasping the condition.
上記目的を達成するため、本発明の加熱処理装置に
は、 ２種類の合金線又は金属線の端部を結合して形成した
熱電対の熱接点が表面に当接されたモニタウエハが、加
熱炉内の被処理体に近接して配置され、前記熱電対の前
記２種類の合金線又は金属線を中継手段を介して前記加
熱炉外に延長して形成した、前記熱電対の前記２種類の
合金線又は金属線の各端部を定温部に接続させ、前記定
温部における前記熱電対の起電力を計測することによ
り、前記被処理体の温度を測定するように構成されてお
り、かつ、前記加熱炉が、前記中継手段と、前記熱電対
及び前記モニタウエハを保持する機構が設けられた第１
の部分と、炉壁の一部に窓部が形成され、前記窓部にお
いて前記第１の部分に対し着脱可能に接続する第２の部
分とにより構成されているか、もしくは、前記熱電対の
前記第１の合金線又は金属線及び前記第２の合金線又は
金属線の各々が、一方の端部が前記熱接点を形成し、前
記モニタウエハに当接される第１の素線と、一方の端部
が前記中継手段を介して前記加熱炉外に延長される第２
の素線と、前記第１の素線の他方の端部と前記第２の素
線の他方の端部とが互いに当接される接続部とを有し、
前記接続部における前記第１の素線の他方の端部と前記
第２の素線の他方の端部の当接状態が、前記被処理体及
び前記被処理体を保持する保持具の重量により押圧によ
り維持されている。In order to achieve the above object, the heat treatment apparatus of the present invention includes a monitor wafer in which a thermocouple formed by joining the ends of two types of alloy wires or metal wires is brought into contact with the surface thereof. The two types of thermocouples, which are arranged close to the object to be processed in the furnace and are formed by extending the two types of alloy wires or metal wires of the thermocouple outside the heating furnace via relay means. Each end of the alloy wire or metal wire is connected to a constant temperature portion, by measuring the electromotive force of the thermocouple in the constant temperature portion, it is configured to measure the temperature of the object to be processed, and A heating furnace provided with a mechanism for holding the relay means, the thermocouple and the monitor wafer;
And a second part in which a window is formed in a part of the furnace wall and the window is detachably connected to the first part in the window, or the second part of the thermocouple Each of a first alloy wire or a metal wire and the second alloy wire or a metal wire has one end forming the thermal contact, and a first element wire abutting on the monitor wafer; The second end is extended out of the heating furnace through the relay means.
And a connection portion at which the other end of the first strand and the other end of the second strand are in contact with each other,
The contact state between the other end of the first strand and the other end of the second strand in the connection portion depends on the weight of the object to be processed and a holder for holding the object to be processed. It is maintained by pressing.
この構成を模式的に図示したものが第１図で、モニタ
ウエハ１は被処理ウエハ10と同条件の位置にセットされ
ている。３はウエハ支持台である。FIG. 1 schematically shows this configuration. The monitor wafer 1 is set at a position under the same conditions as the wafer 10 to be processed. 3 is a wafer support.
炉内の熱電対２の熱接点21はモニタウエハに当接さ
れ、他端は中継手段５に接続されている。該中継手段は
熱電対の素線を石英管６および加熱炉７の外部に導出す
る機能を備えており、熱電対の炉外部分28は低温空間ま
で延長されて、終端には補償導線への接続端子であるコ
ネクタ23が設けられている。The thermal contact 21 of the thermocouple 2 in the furnace is in contact with the monitor wafer, and the other end is connected to the relay means 5. The relay means has a function of leading the thermocouple element wire to the outside of the quartz tube 6 and the heating furnace 7, and the outer part 28 of the thermocouple is extended to a low-temperature space, and the end is connected to a compensating wire at the end. A connector 23 as a connection terminal is provided.
本発明の一実施例に於いては、この中継手段は前記加
熱炉の発熱体を含む前記被処理体の外囲部が部分的に取
り外し可能の構造となっており、該取り外し可能部分が
前記熱電対及び該熱電対の熱接点が当接された前記モニ
タウエハを保持する構造となっている。In one embodiment of the present invention, the relay means has a structure in which an outer peripheral portion of the object to be processed including the heating element of the heating furnace is partially removable, and the removable portion is the same as the above. The thermocouple and the thermal contact of the thermocouple are configured to hold the monitor wafer in contact with the thermocouple.
本発明の他の実施例に於いては、この中継手段は前記
熱電対を構成する２種の合金線もしくは金属線の前記熱
接点を形成しない端部が、該熱電対を構成する合金もし
くは金属より成る２本の中継線の一方の端に当接され、
前記被処理体とその保持具の重量によって当接状態が維
持されると共に、該中継線の他方の端部は前記炉外に導
出された構造となっている。In another embodiment of the present invention, the relay means may include two kinds of alloy wires or metal wires constituting the thermocouple, the ends of the two wires not forming the thermal contact being made of the alloy or metal constituting the thermocouple. Abut on one end of the two trunks consisting of
The abutting state is maintained by the weight of the object to be processed and its holder, and the other end of the relay wire has a structure led out of the furnace.
本発明の加熱処理装置を用いてCVDのような処理が行
われる時には、被処理体であるウエハと熱電対が貼付さ
れたモニタウエハとは全く同等の処理を受け、同じ速度
で皮膜が成長するから、被処理ウエハとモニタウエハの
温度差は殆ど無い状態で進行する。即ち、温度モニタと
しての効用は不変である。When a process such as CVD is performed using the heat treatment apparatus of the present invention, the wafer to be processed and the monitor wafer to which the thermocouple is attached undergo completely the same processing, and the film grows at the same speed. Therefore, the process proceeds with almost no temperature difference between the wafer to be processed and the monitor wafer. That is, the utility as a temperature monitor is unchanged.
本発明に於いては、モニタウエハに当接された熱電対
を炉外に導くため、特に工夫された中継手段が用いられ
る。In the present invention, a specially designed relay means is used to guide the thermocouple in contact with the monitor wafer to the outside of the furnace.
一つの実施例に於いては、反応管の管壁の一部が取り
外し可能な構造となっており、モニタウエハと熱電対は
該管壁部分に固定される。該管壁部分は更に加熱炉の取
り外し可能の部分に固定されていて、炉を開けると反応
管も開けられ、同時にモニタウエハも管外に取り出され
た状態となる。In one embodiment, a part of the tube wall of the reaction tube has a removable structure, and the monitor wafer and the thermocouple are fixed to the tube wall portion. The tube wall is further fixed to a removable portion of the heating furnace. When the furnace is opened, the reaction tube is opened, and at the same time, the monitor wafer is taken out of the tube.
この状態であればモニタウエハの交換やエッチング洗
浄は容易であり、被処理ウエハを支持台に載せて炉内に
装填する際の障害になることもない。In this state, replacement of the monitor wafer and cleaning by etching are easy, and there is no hindrance when the wafer to be processed is mounted on the support table and loaded into the furnace.
他の実施例に於いては、モニタウエハから延びる熱電
対線はウエハ支持台に固定されて突出した接続端を形成
し、反応管の管壁および炉の外囲構造を貫通して設けら
れた受け側の接続端に衝き当てた状態とすることで、外
部導出部分に接続される。衝き当ての方向を下向きと
し、ウエハ支持台の自重によって押圧力を得ている。In another embodiment, a thermocouple wire extending from the monitor wafer is fixed to the wafer support to form a protruding connection end and is provided through the tube wall of the reaction tube and the surrounding structure of the furnace. By being brought into contact with the connection end on the receiving side, it is connected to the external lead-out part. The direction of impact is directed downward, and the pressing force is obtained by the weight of the wafer support.
この実施例でもモニタウエハの交換やエッチング洗浄
は容易であり、被処理ウエハの炉内装填は通常の場合と
同じように行えばよい。In this embodiment as well, replacement of the monitor wafer and cleaning by etching are easy, and the wafer to be processed may be filled in the furnace in the same manner as in a normal case.
最初に、本発明で仕様されるモニタウエハの準備につ
いて、第２図を参照しながら説明する。被処理ウエハが
シリコン（Si）であれば、モニタウエハ１も通常のSiウ
エハである。熱電対２をウエハの表面に添わせ、熱接点
21がほゞ中央にくるように保持してSiO2膜19をCVD法で
堆積すれば、熱電対はウエハに接着される。SiO2膜は必
要な部分を残して残余はエッチング除去する。First, the preparation of the monitor wafer used in the present invention will be described with reference to FIG. If the wafer to be processed is silicon (Si), the monitor wafer 1 is also a normal Si wafer. A thermocouple 2 is attached to the surface of the wafer,
If the SiO 2 film 19 is deposited by the CVD method while holding so that the 21 is almost at the center, the thermocouple is bonded to the wafer. The remaining portion of the SiO 2 film is removed by etching, leaving a necessary portion.
請求項２に対応する第１の実施例では、このモニタウ
エハは反応管に取りつけられ、熱電対の素線は貫通機構
によって炉外に導出される。反応管が通常の形状であっ
て、それにモニタウエハが固定されたのでは、交換や洗
浄などの処理ができないから、本実施例では以下に説明
する構造でそれを可能にしている。In a first embodiment, the monitor wafer is mounted on a reaction tube, and the wires of the thermocouple are led out of the furnace by a penetration mechanism. If the reaction tube has a normal shape and the monitor wafer is fixed thereto, processing such as replacement and cleaning cannot be performed. Therefore, in the present embodiment, this can be achieved by the structure described below.
第３図は、請求項２に対応する本発明の第１の実施例
に於いて用いられる石英管の形状を示す図であって、本
実施例に於ける石英管の貫通構造部分の位置と形状が示
されている。石英管６は管壁の一部分に窓が開けられて
おり、これを塞ぐ蓋状の管壁61は脱着可能となってい
る。前記貫通構造はこの蓋状管壁に設けられ、この部分
と炉体の相対的な位置関係を示す管軸に垂直な断面構造
が第４図に示されている。以下、該図面を参照しながら
その構造を説明する。FIG. 3 is a view showing the shape of a quartz tube used in the first embodiment of the present invention corresponding to claim 2, wherein the position of the through-hole portion of the quartz tube and the position of the quartz tube in this embodiment are shown. The shape is shown. The quartz tube 6 has a window in a part of the tube wall, and a lid-like tube wall 61 for closing the window is detachable. The penetrating structure is provided on the lid-like tube wall, and a cross-sectional structure perpendicular to the tube axis showing the relative positional relationship between this portion and the furnace body is shown in FIG. Hereinafter, the structure will be described with reference to the drawings.
石英製の反応管６と窓の部分を塞ぐ蓋状管壁61との間
はシール材62を介して気密状態に保たれる。反応管を炉
内に装填した状態で窓を開けられるように、炉体７の一
部も開閉可能な可動構造となっていて、蓋状管壁61はこ
の炉体の可動部分71と一緒に開閉される。両者は蓋保持
具72によって非剛性的に結合されており、炉を閉じた時
には、蓋状管壁61は石英管６に押しつけられて窓部を密
閉する。煩雑さを避けるため、この非剛性的結合の詳細
は図示されていないが、スプリングを使用することで、
蓋状管壁61に適当な押圧力を生ぜしめている。この部分
は公知の構造を利用すればよい。An airtight state is maintained between the quartz reaction tube 6 and a lid-like tube wall 61 that covers the window portion via a sealing material 62. A part of the furnace body 7 has a movable structure that can be opened and closed so that the window can be opened with the reaction tube loaded in the furnace, and the lid-like tube wall 61 is formed together with the movable part 71 of the furnace body. It is opened and closed. The two are non-rigidly connected by a lid holder 72. When the furnace is closed, the lid-like tube wall 61 is pressed against the quartz tube 6 to seal the window. Details of this non-rigid connection are not shown to avoid complexity, but by using a spring,
An appropriate pressing force is generated on the lid-like tube wall 61. A known structure may be used for this part.
蓋状管壁61と反応管６の間の気密性はシール材62を使
用することで実現している。このシール材は、ステンレ
ス鋼板を断面Ｃ字型の環状に成形したメタルシールで、
Ｏリングと同じように使うことができる。通常のように
Ｏリングを使用しないのは耐熱性に問題がある故であっ
て、管状の構造を有し、冷却液を通すことの出来る水冷
型Ｏリングであれば使用可能である。The airtightness between the lid-like tube wall 61 and the reaction tube 6 is realized by using a sealing material 62. This seal material is a metal seal formed by forming a stainless steel plate into an annular shape with a C-shaped cross section.
Can be used in the same way as an O-ring. The reason that the O-ring is not used as usual is that there is a problem in heat resistance. Any water-cooled O-ring having a tubular structure and through which a cooling liquid can pass can be used.
モニタウエハ１はウエハ保持具63によって蓋状管壁61
に半固定的に取りつけられる。既述したように蓋状管壁
61は炉体の可動部分71に結合され、該可動部分71は蝶番
73を軸として回転移動するので、ウエハ保持具63は、傾
きが変わってもウエハが脱落することなく保持し且つウ
エハ表面は広く解放された構造であることが要求され
る。従ってウエハの周囲を数ヶ所で受ける形の石英製治
具が適している。The monitor wafer 1 is held by the wafer holder 63 by the lid-like tube wall 61.
Semi-fixedly attached to Lid tube wall as described above
61 is coupled to a movable part 71 of the furnace body, said movable part 71 being hinged
Since the wafer holder 63 rotates about the axis 73, the wafer holder 63 is required to hold the wafer without falling even if the inclination changes, and to have a structure in which the wafer surface is widely opened. Accordingly, a quartz jig that receives the wafer at several locations around the wafer is suitable.
熱電対２は熱接点21がモニタウエハ上にあり、素線は
貫通構造である中継手段５を通じて炉体の外まで延長さ
れ、補償導線接続用のコネクタ23に結合されている。こ
の貫通機構の詳細な構造は第５図に示されている。以
下、第５図が参照される。The thermocouple 2 has a thermal contact 21 on the monitor wafer, and the strand is extended to the outside of the furnace body through the relay means 5 having a penetrating structure, and connected to a connector 23 for connecting a compensating lead. The detailed structure of this penetrating mechanism is shown in FIG. In the following, reference is made to FIG.
前記石英管の蓋状管壁61には、これにほゞ垂直に石英
パイプ51が取りつけられる。両者は石英ナット52を締め
つけることで固定されるが、ナットを受ける部分も石英
製で蓋状管壁61に溶接されている。また、機密性を得る
ためにシール材53が用いられ、ここでも断面Ｃ字型のメ
タルシールが用いられる。蓋状管壁のナットを受ける部
分は石英成形品を溶接する等の方法で作成される。A quartz pipe 51 is attached to the lid-like tube wall 61 of the quartz tube almost perpendicularly thereto. Both are fixed by tightening the quartz nut 52, but the portion receiving the nut is also made of quartz and welded to the lid-like tube wall 61. In addition, a sealing material 53 is used to obtain confidentiality, and a metal seal having a C-shaped cross section is used here. The portion for receiving the nut of the lid-like tube wall is formed by a method such as welding a quartz molded product.
石英パイプ51は更に炉体の可動部71も貫通し、この貫
通部分は熱洩れ防止用の断熱材74でシールされている。
石英パイプ51の開口端は熱電対を通した状態でセメント
54により封止される。The quartz pipe 51 further penetrates the movable part 71 of the furnace body, and this penetrated part is sealed with a heat insulating material 74 for preventing heat leakage.
The open end of the quartz pipe 51 is cemented with a thermocouple
Sealed by 54.
本実施例ではモニタウエハの温度が直接測定され、測
定用熱電対はそのまま炉外に延長される構造でありなが
ら、モニタウエハの交換や再生処理を行うことが容易で
ある。In this embodiment, the temperature of the monitor wafer is directly measured, and the monitor thermocouple is easily extended out of the furnace, but the monitor wafer can be easily replaced or regenerated.
第６図は請求項３および４に対応する第２の実施例に
おける中継手段の構造を示す図である。本実施例では熱
電対は熱接点側と冷接点側に分離され、両者が押圧によ
り接続された状態で熱電対として機能させ、不使用時に
は容易に引き離せるようになっている。このことがモニ
タウエハの炉内装填を容易にしている。以下、第６図を
参照しながらこの実施例を説明する。FIG. 6 is a diagram showing the structure of the relay means in the second embodiment according to the third and fourth aspects. In the present embodiment, the thermocouple is separated into a hot contact side and a cold contact side, and functions as a thermocouple when both are connected by pressing, and can be easily separated when not in use. This facilitates the loading of the monitor wafer into the furnace. Hereinafter, this embodiment will be described with reference to FIG.
モニタウエハ１はウエハ支持台３に収められ、その表
面に熱電対の熱接点21が当接されている。両者は上述の
実施例のように接着されていてもよいが、ここでは単に
軽く押しつけられた状態であるとする。このように両者
が接着されていないことで、モニタウエハの交換が容易
になるだけでなく、被処理ウエハの１枚の温度を測定す
ることもできる。The monitor wafer 1 is accommodated in a wafer support table 3, and the surface of the monitor wafer 1 is in contact with a thermal contact 21 of a thermocouple. Both may be adhered as in the above-described embodiment, but here it is assumed that they are simply pressed lightly. Since the two are not adhered to each other, not only can the monitor wafer be easily replaced, but also the temperature of one wafer to be processed can be measured.
熱電対の素線22は接続端管31に収容され、熱接点でな
い方の端は接続電極25となっている。この接続電極は素
線と同じ材料から成っており、ウエハ側の電極25に対向
して、それを受ける中継側の接続電極26が設けられる。
接続端管31の素材は石英で、ウエハ支持台３に溶接、固
定されている。The element wire 22 of the thermocouple is housed in the connection end tube 31, and the other end that is not a thermal contact is a connection electrode 25. The connection electrode is made of the same material as the element wire, and is provided with a relay-side connection electrode 26 which faces the electrode 25 on the wafer side and receives the electrode.
The material of the connection end tube 31 is quartz, which is welded and fixed to the wafer support 3.
一方、これを受ける中継機構は石英パイプ51の一端に
バネ状の接続電極26が設けられたものであり、該電極26
も熱電対の素線と同じ材料で構成される。ウエハ側の接
続電極がバネ状の電極26の間に押し込まれて熱接点側の
熱電対と冷接点側の熱電対線が接続される。接続部の押
圧状態はウエハ支持台の重量によって維持される。On the other hand, the relay mechanism receiving this is provided with a spring-shaped connection electrode 26 at one end of a quartz pipe 51, and the electrode 26
Is also made of the same material as the thermocouple wire. The connection electrode on the wafer side is pushed between the spring-shaped electrodes 26, and the thermocouple on the hot contact side and the thermocouple wire on the cold contact side are connected. The pressed state of the connection portion is maintained by the weight of the wafer support.
石英製の貫通管51は石英管２の管軸方向に延長され、
石英管の炉外の部分の管壁を貫通して管外に導かれてい
る。管壁に固定する機構は図示されていないが、第１の
実施例に於けると同様であり、石英ナットとシール材を
用いて気密性を実現したものである。この機構部は室温
に近い低温部に設けられるので、シリコーン・ゴムのよ
うに若干の耐熱性を備えたゴムのＯリングをシール材と
して使用することができる。The through tube 51 made of quartz is extended in the tube axis direction of the quartz tube 2,
The quartz tube is guided to the outside of the tube through a tube wall of a portion outside the furnace. Although the mechanism for fixing to the tube wall is not shown, it is the same as that in the first embodiment, and airtightness is realized by using a quartz nut and a sealing material. Since this mechanism is provided in a low-temperature portion close to room temperature, a rubber O-ring having some heat resistance such as silicone rubber can be used as a sealing material.
貫通管51の中空部は外部終端がセメントによって封止
されているので、反応管である石英管６の内部を真空排
気することが可能である。熱電対の素線は石英パイプ中
を通り、セメント封止部を貫通してコネクタに接続され
る。コネクタ以後、補償導線により定温部まで延長さ
れ、熱起電力の計測が行われるのは通常の通りである。Since the outer end of the hollow portion of the through tube 51 is sealed with cement, the inside of the quartz tube 6 serving as a reaction tube can be evacuated. The strands of the thermocouple pass through the quartz pipe, penetrate the cement seal and are connected to the connector. After the connector, it is extended to the constant temperature part by the compensating lead wire, and the measurement of the thermoelectromotive force is performed as usual.
この実施例では熱電対が一度分断されるので、両側を
夫々ウエハ支持台と石英管の管壁に固定することがで
き、石英管の気密性を維持することや良好な操作性を維
持することが容易となる。押圧接触による熱電対の連結
で電気的接続を完全にするには、酸化し難い熱起電力材
料、例えば白金／白金ロジウムのようなもの、を用いる
のが適当である。In this embodiment, since the thermocouple is cut off once, both sides can be fixed to the wafer support and the tube wall of the quartz tube, respectively, to maintain the airtightness of the quartz tube and maintain good operability. Becomes easier. In order to complete the electrical connection by connecting the thermocouples by pressing contact, it is appropriate to use a thermoelectric material which is difficult to oxidize, such as platinum / platinum rhodium.
また、上記実施例は何れも本発明を横型炉に適用した
ものであるが、縦型炉に対しても同様に本発明を適用す
ることができる。In each of the above embodiments, the present invention is applied to a horizontal furnace, but the present invention can be similarly applied to a vertical furnace.
以上説明したように、熱電対を用いてモニタウエハの
温度を直接測定しているため、被処理ウエハの温度監視
が精度よく行われると共に、中継手段を用いて熱電対を
炉外に導くことにより、操作性を良好なものとしてい
る。As described above, since the temperature of the monitor wafer is directly measured using the thermocouple, the temperature of the wafer to be processed is accurately monitored, and the thermocouple is guided out of the furnace using the relay means. The operability is good.
第１図は本発明の構成を模式的に示す図、 第２図は本発明で使用するモニタウエハを示す図、 第３図は第１の実施例に於ける石英管の形状を示す図、 第４図は第１の実施例に於ける中継手段部分の構造を示
す断面模式図、 第５図は第１の実施例の細部を示す図、 第６図は第２の実施例の断面構造を示す模式図、 第７図は従来の温度測定状況を示す模式図 であって、 図に於いて １はモニタウエハ、 ２は熱電対、 ３はウエハ支持台（石英製）、 ５は中継手段、 ６は石英管、 ７は炉体（ヒータを包蔵）、 10は被処理ウエハ、 12は熱電対、 15は保護管、 17は炉体（ヒータを包蔵）、 19はSiO2膜、 21は熱接点、 22は素線、 23はコネクタ、 25は接続電極（ウエハ側）、 26は接続電極（中継側）、 28は熱電対の部分、 51は貫通管（石英製）、 52は石英ナット、 53はシール材、 54はセメント、 61は蓋状管壁、 62はシール材、 63はウエハ保持具、 71は炉体可動部分、 72は蓋保持具、 73は蝶番、 74は断熱材 である。FIG. 1 is a diagram schematically showing the configuration of the present invention, FIG. 2 is a diagram showing a monitor wafer used in the present invention, FIG. 3 is a diagram showing the shape of a quartz tube in the first embodiment, FIG. 4 is a schematic sectional view showing the structure of the relay means in the first embodiment, FIG. 5 is a view showing details of the first embodiment, and FIG. 6 is a sectional structure of the second embodiment. FIG. 7 is a schematic diagram showing a conventional temperature measurement situation, in which 1 is a monitor wafer, 2 is a thermocouple, 3 is a wafer support (made of quartz), and 5 is a relay means. , 6 is a quartz tube, 7 is a furnace body (including a heater), 10 is a wafer to be processed, 12 is a thermocouple, 15 is a protective tube, 17 is a furnace body (including a heater), 19 is a SiO 2 film, 21 is Thermal contact, 22 is a wire, 23 is a connector, 25 is a connection electrode (wafer side), 26 is a connection electrode (relay side), 28 is a thermocouple part, 51 is a through tube (made of quartz), and 52 is stone Nut, 53, sealing material, 54, cement, 61, lid-like tube wall, 62, sealing material, 63, wafer holder, 71, furnace body movable part, 72, lid holder, 73, hinge, 74, heat insulation Material.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−169411（ＪＰ，Ａ) 実開 昭61−51734（ＪＰ，Ｕ) 実開 昭60−103828（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/66 G01K 1/14 G01K 7/02 H01L 21/205 H01L 21/22 501 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-169411 (JP, A) JP-A 61-51734 (JP, U) JP-A 60-103828 (JP, U) Field (Int.Cl. 7 , DB name) H01L 21/66 G01K 1/14 G01K 7/02 H01L 21/205 H01L 21/22 501
Claims (4)
は金属線により構成され、前記第１の合金線又は金属線
の第１の端部と前記第２の合金線又は金属線の第１の端
部を互いに結合させて熱接点を形成した熱電対と、 内部に被処理体が配置され、発熱体を有する加熱炉と、 前記加熱炉内の前記被処理体に近接して配置され、表面
に前記熱電対の前記熱接点が当接されたモニタウエハ
と、 前記熱電対の前記第１の合金線又は金属線及び前記第２
の合金線又は金属線を前記加熱炉外に延長させることを
可能にする中継手段と、 前記中継手段を介して前記加熱炉外に形成された、前記
熱電対の前記第１の合金線又は金属線の第２の端部及び
前記第２の合金線又は金属線の第２の端部を定温部に接
続させ、前記定温部における前記熱電対の起電力を計測
し、前記被処理体の温度を測定する測定手段 とを備え、前記加熱炉が、 前記中継手段と、前記熱電対及び前記モニタウエハを保
持する機構が設けられた第１の部分と、 炉壁の一部に窓部が形成され、前記窓部において前記第
１の部分に対し着脱可能に接続する第２の部分 とにより構成されたことを特徴とする加熱処理装置。1. A first alloy wire or metal wire and a second alloy wire or metal wire, a first end of the first alloy wire or metal wire and the second alloy wire or metal wire. A thermocouple in which first ends of the wires are connected to each other to form a thermal contact; a heating object having a heating element disposed therein, and a heating furnace having a heating element; A monitor wafer, the surface of which is in contact with the thermal contact of the thermocouple, the first alloy wire or metal wire of the thermocouple, and the second
Relay means for allowing an alloy wire or metal wire of the above to be extended outside the heating furnace, and the first alloy wire or metal of the thermocouple formed outside the heating furnace via the relay means. A second end of the wire and a second end of the second alloy wire or the metal wire are connected to a constant temperature part, and the electromotive force of the thermocouple in the constant temperature part is measured, and the temperature of the object to be processed is measured. Wherein the heating furnace comprises: a first portion provided with a mechanism for holding the thermocouple and the monitor wafer; and a window formed in a part of the furnace wall. And a second portion removably connected to the first portion in the window portion.
及び前記第２の合金線又は金属線の各々が、 一方の端部が前記熱接点を形成し、前記モニタウエハに
当接される第１の素線と、 一方の端部が前記中継手段を介して前記加熱炉外に延長
される第２の素線と、 前記第１の素線の他方の端部と前記第２の素線の他方の
端部とが互いに当接される接続部 とを有し、 前記接続部における前記第１の素線の他方の端部と前記
第２の素線の他方の端部の当接状態が、前記被処理体及
び前記被処理体を保持する保持具の重量により押圧によ
り維持されたことを特徴とする請求項１記載の加熱処理
装置。2. The thermocouple according to claim 1, wherein each of said first alloy wire or metal wire and said second alloy wire or metal wire has one end forming said thermal contact and abutting against said monitor wafer. A first wire, one end of which is extended out of the heating furnace via the relay means, the other end of the first wire and the second wire. And a connecting part in which the other end of the element wire is in contact with each other. The other end of the first element and the other end of the second element in the connecting part are provided. The heat treatment apparatus according to claim 1, wherein the contact state is maintained by pressing the object to be processed and a holder for holding the object to be processed.
は金属線により構成され、前記第１の合金線又は金属線
の第１の端部と前記第２の合金線又は金属線の第１の端
部を互いに結合させて熱接点を形成した熱電対と、 内部に被処理体が配置され、発熱体を有する加熱炉と、 前記加熱炉内の前記被処理体に近接して配置され、表面
に前記熱電対の前記熱接点が当接されたモニタウエハ
と、 前記熱電対の前記第１の合金線又は金属線及び前記第２
の合金線又は金属線を前記加熱炉外に延長させることを
可能にする中継手段と、 前記中継手段を介して前記加熱炉外に形成された、前記
熱電対の前記第１の合金線又は金属線の第２の端部及び
前記第２の合金線又は金属線の第２の端部を定温部に接
続させ、前記定温部における前記熱電対の起電力を計測
し、前記被処理体の温度を測定する測定手段 とを備え、 前記熱電対の前記第１の合金線又は金属線及び前記第２
の合金線又は金属線の各々が、 一方の端部が前記熱接点を形成し、前記モニタウエハに
当接される第１の素線と、 一方の端部が前記中継手段を介して前記加熱炉外に延長
される第２の素線と、 前記第１の素線の他方の端部と前記第２の素線の他方の
端部とが互いに当接される接続部 とを有し、 前記接続部における前記第１の素線の他方の端部と前記
第２の素線の他方の端部の当接状態が、前記被処理体及
び前記被処理体を保持する保持具の重量による押圧によ
り維持されたことを特徴とする加熱処理装置。3. A first alloy wire or metal wire and a second alloy wire or metal wire, a first end of the first alloy wire or metal wire and the second alloy wire or metal wire. A thermocouple in which first ends of the wires are connected to each other to form a thermal contact; a heating object having a heating element disposed therein, and a heating furnace having a heating element; A monitor wafer, the surface of which is in contact with the thermal contact of the thermocouple, the first alloy wire or metal wire of the thermocouple, and the second
Relay means for allowing an alloy wire or metal wire of the above to be extended outside the heating furnace, and the first alloy wire or metal of the thermocouple formed outside the heating furnace via the relay means. A second end of the wire and a second end of the second alloy wire or the metal wire are connected to a constant temperature part, and the electromotive force of the thermocouple in the constant temperature part is measured, and the temperature of the object to be processed is measured. Measuring means for measuring the first alloy wire or the metal wire of the thermocouple and the second
Each of the alloy wire or the metal wire has one end forming the thermal contact and a first element wire abutting on the monitor wafer; and one end being the heating element via the relay means. A second wire extending outside the furnace, and a connection portion at which the other end of the first wire and the other end of the second wire are in contact with each other; The contact state between the other end of the first strand and the other end of the second strand in the connection portion depends on the weight of the object to be processed and a holder for holding the object to be processed. A heat treatment device characterized by being maintained by pressing.
あり、 前記熱電対の前記熱接点が押圧によって前記モニタウエ
ハに当接されたことを特徴とする請求項２または３記載
の加熱処理装置。4. The heating device according to claim 2, wherein the monitor wafer is one of the objects to be processed, and the thermal contact of the thermocouple is brought into contact with the monitor wafer by pressing. Processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31678790A JP3241040B2 (en) | 1990-11-21 | 1990-11-21 | Heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31678790A JP3241040B2 (en) | 1990-11-21 | 1990-11-21 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04186859A JPH04186859A (en) | 1992-07-03 |
| JP3241040B2 true JP3241040B2 (en) | 2001-12-25 |
Family
ID=18080915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31678790A Expired - Fee Related JP3241040B2 (en) | 1990-11-21 | 1990-11-21 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3241040B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100426810B1 (en) * | 2001-03-21 | 2004-04-08 | 삼성전자주식회사 | Wafer carrier |
| JP2006352145A (en) * | 2006-07-06 | 2006-12-28 | Hitachi Kokusai Electric Inc | Heat treatment apparatus, temperature detection unit for use in the same, method of manufacturing semiconductor device |
-
1990
- 1990-11-21 JP JP31678790A patent/JP3241040B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04186859A (en) | 1992-07-03 |
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